CN1965405A - Manufacturing method of electronic component seal and electronic component seal - Google Patents
Manufacturing method of electronic component seal and electronic component seal Download PDFInfo
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- CN1965405A CN1965405A CN 200580010073 CN200580010073A CN1965405A CN 1965405 A CN1965405 A CN 1965405A CN 200580010073 CN200580010073 CN 200580010073 CN 200580010073 A CN200580010073 A CN 200580010073A CN 1965405 A CN1965405 A CN 1965405A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 claims abstract description 422
- 238000003466 welding Methods 0.000 claims abstract description 314
- 238000010894 electron beam technology Methods 0.000 claims abstract description 224
- 230000001678 irradiating effect Effects 0.000 claims abstract description 65
- 238000000137 annealing Methods 0.000 claims description 149
- 238000005538 encapsulation Methods 0.000 claims description 118
- 239000003566 sealing material Substances 0.000 claims description 82
- 238000011112 process operation Methods 0.000 claims description 56
- 230000015572 biosynthetic process Effects 0.000 claims description 46
- 230000004927 fusion Effects 0.000 claims description 35
- 230000033228 biological regulation Effects 0.000 claims description 20
- 238000007789 sealing Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 238000005286 illumination Methods 0.000 claims description 8
- 230000003760 hair shine Effects 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 description 190
- 239000007789 gas Substances 0.000 description 80
- 238000012545 processing Methods 0.000 description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 55
- 239000010453 quartz Substances 0.000 description 50
- 239000013078 crystal Substances 0.000 description 49
- 239000004615 ingredient Substances 0.000 description 23
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- 238000001035 drying Methods 0.000 description 6
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- 229910000679 solder Inorganic materials 0.000 description 5
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- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
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- 150000002343 gold Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- Sealing Battery Cases Or Jackets (AREA)
- Laser Beam Processing (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a manufacturing method of an electronic component seal which can seal in a state of high vacuum by preventing gas from being enclosed inside a vessel, and improve manufacturing efficiency. After forming a non-welding portion by a first welding process step S203 constituted by a first beam irradiating process step (S203a) and a second beam irradiating process step (S203b), in an anneal treating process step (S204), an anneal treatment is performed by irradiating a designated portion on a locus of the electron beam, which has been formed in the first beam irradiating process step (S203a), with the electron beam.
Description
Technical field
The present invention relates to after taking in electronic element such as quartz crystal, piezoelectric vibrator, IC chip are in container, with lid airtight sealing container, and the manufacture method of the electronic component encapsulation body that constitutes and the electronic component encapsulation body that utilizes this method to make.
Background technology
Electronic components such as quartz crystal for example are accommodated in the inside of the packaging body that constitutes by the container that is made of pottery etc. and the lid that seals the peristome of this container with airtight conditions, constitute the electronic component encapsulation body thus.
As the encapsulating method of electronic component encapsulation body, adopt the seam weldering in the past always, but since after the peristome of container is by the Kovar alloy ring of silver solder soldering high price seam weldering lid, so increase man-hour, cost up.In addition, be difficult to make the abundant miniaturization of electronic component encapsulation body.In addition, also there is the next melting sealed material of heating container in the vacuum, thus lid is welded on the vacuum furnace bonding machine on the container, but this is except that cost and productivity excellence, on the other hand, owing to once spread all over the welding in the full week of peripheral part that seals material,, produced the problem that worsens vacuum degree when welding so the exhaust that produces from the sealing material is closed in package interior.From considering in this respect, replace stitching weldering always and wait the sealing that utilizes electron beam welding.
Figure 28 is the vertical view that is used to illustrate the method for electron beam welding, and expression is from the track of the electron beam 53 of lid 51 sides irradiation.As shown in figure 28, in electron beam welding, be configured between the lid 51 above the container 50 sealing materials 52 such as configuration metal solder at container 50 with in the mode of airtight container peristome.Then, the periphery from lid 51 sides along lid 51 carries out the electron beam irradiation to prescribed direction sequential scanning electron beam 53.Herein, so that the initial point of line irradiation and terminal point in the consistent mode irradiating electron beam 53 in a P place.By the irradiation of this electron beam 53, sealing material 52 is heated and fusion, and thus, container 50 and lid 51 utilize sealing material 52 and weld, and are sealed into the electronic component encapsulation body 54 of taking in electronic component (not shown).
, as above-mentioned electron beam welding in, when 52 fusions of sealing such as metal solder material, produce gas, if this gas is sealing in the electronic component encapsulation body 54, then influence the characteristic of electronic component (not shown) or reliability etc.For example, in the electronic component encapsulation body 54 that constitutes taking in quartz crystal, the gas that produces during because of welding, the equivalent serial resistance value of quartz crystal (CI value) increases, its result, the oscillating characteristic of quartz crystal descends.Therefore, in electron beam welding, the gas that need produce when 52 fusions of sealing material are discharged in the outside prevents from gas is sealing into electronic component encapsulation body 54 inside.
As the method that prevents from gas is sealing into electronic component encapsulation body 54 inside, as Figure 29 and shown in Figure 30, peripheral complete all irradiating electron beams 53 that existence and non-once spread all over lid 51, but the method for the periphery of lid 51 is shone several times (for example, with reference to patent documentation 1～patent documentation 4 in the zone in accordance with regulations.)。In the method, at first, as shown in figure 29, the zone of regulation is redefined for non-irradiation area 55, the zone beyond it to prescribed direction sequential scanning electron beam 53, is carried out the line irradiation along the periphery of lid 51.Herein, being set between a P and some Q and forming non-irradiation area 55, is initial point with a P, is terminal point irradiating electron beam 53 with a Q simultaneously.
Non-irradiation area 55 is the not state of welding because therefore not irradiating electron beam 53 seals material 52 not fusions.Below, the not zone of welding that is formed on this non-irradiation area 55 is called not welding portion 55 '.This not welding portion 55 ' can be used as the outlet of gas.By after welding portion 55 ' has not carried out the discharge of gas, as shown in figure 30, this part is welded in welding portion 55 ' irradiating electron beam 53 not.In the welding of welding portion 55 ' not, to the identical scanning direction electron beam 53 of situation of Figure 29 of the part of welding beyond it, carry out the line irradiation.Herein, be that initial point is terminal point irradiating electron beam 53 with a P simultaneously with a Q.According to above method, can suppress to container 50 inner inclosure gases, and can carry out the sealing of electronic component encapsulation body 54.
In addition, the container of ceramic 50 is owing to be attached with impurity in the atmosphere or moisture etc. (below, be referred to as volatile ingredient), so need remove this volatile ingredient on its surface etc.For example in patent documentation 2, preheating container 50, sealing material 52 and lid 51 are removed volatile ingredient from each member before the electron beam irradiation.
In addition, in patent documentation 3,, remove effectively attached to the gas particle on container 50 and the lid 51 by having formed not heat drying electronic component encapsulation body 54 under the state of welding portion 55 '.
Patent documentation 1: the spy opens the 2000-196162 communique
Patent documentation 2: the spy opens the 2000-223604 communique
Patent documentation 3: the spy opens the 2001-257279 communique
Patent documentation 4: the spy opens the 2002-141427 communique
In order removing, and in the method with heat drying electronic component encapsulation bodies 54 such as heating furnaces, need to make heating furnace and electron beam device, to cause that device maximizes, installation cost increases in abutting connection with configuration attached to the volatile ingredient on container 50 or the lid 51 etc.In addition, in the method, using heating furnace heat drying electronic component encapsulation body after 54 a few hours, need the operation of cooling electronic components seal 54 or it is moved to the operation of line device from heating furnace, owing in each operation, all need the time, so increase blanking time (tact time), make decrease in efficiency.
, aforesaid formation not welding portion 55 ' discharge afterwards in the electron beam welding of gas, the some Q of an end of welding portion 55 ' goes up instantaneous stopping becoming not to be difficult to make electron beam 53.Therefore, need remain under certain state the translational speed of accelerating line etc. will shining power output, carry out the not terminal processes of welding portion 55 ' at a Q place.Therefore, the point Q place of the electron beam 53 when the formation of not welding portion 55 ' shown in Figure 29 stops in the action, the complete stopping period of irradiation to electron beam 53, in crossing the zone of the some Q points of proximity P of welding portion 55 ' not, irradiating electron beam 53 slightly, thus, originally do not want to make the sealing material 52 of the not welding portion 55 ' (promptly putting the zone between P and the some Q) of its fusion might fusion.In addition, even stop electron beam 53, because of the influence of the waste heat of line, the sealing material 52 of welding portion 55 ' might fusion yet.
So the yet result of fusion together of the sealing material 52 of welding portion 55 ' is not difficult to form not welding portion 55 ' accurately by design., especially gas is enclosed in the electronic component encapsulation body 54 herein, preferably reduced the not width W of welding portion 55 ', therefore, need correct control to become not the some P and the position of putting Q of the end of welding portion 55 ' for the inhibition of trying one's best.So, as mentioned above, if can not correctly make electron beam 53 stop at a Q place, then be difficult to control the not width W of welding portion 55 ', thereby can not fully prevent from electronic component encapsulation body 54, to enclose gas, so might cause the deteriorations such as characteristic of the electronic component (not shown) in the electronic component encapsulation body 54.
Summary of the invention
The present invention is in order to solve above-mentioned the problems of the prior art, and purpose is to provide a kind of manufacture method of the electronic component encapsulation body that can prevent to enclose gas in container and seal with high vacuum state and improve manufacturing efficient and the electronic component encapsulation body that utilizes this manufacture method to make.
In order to address the above problem and to achieve the goal, the manufacture method of electronic component encapsulation body of the present invention, it is characterized in that, at least comprise: have opening and passing through the periphery of this opening the described opening of the container in the resettlement section of taking in electronic element in inside (hereinafter referred to as " container "), via the sealing material that the lid (hereinafter referred to as " lid ") that makes described container and the described opening that covers described container engages, dispose the operation of described lid; To described container and described lid at least one the irradiation line the annealing in process operation; Engage the operation of described container and described lid with the described sealing material of fusion.
According to above-mentioned formation,, can discharge the gas that is derived from attached to the volatile ingredient on container or the lid etc. effectively from interconnecting part by the annealing in process operation.Thus, can realize good vacuum degree in the electronic component encapsulation body, its result can improve the characteristic or the reliability of the electronic component of electronic component encapsulation body inside.Especially, according to above-mentioned formation, because in the annealing in process operation, to constituting the container or the lid direct irradiation line of electronic component encapsulation body, so heat electronic component encapsulation body efficiently, thereby the enough very short time of energy compared with the past is carried out annealing in process.
In addition, in above-mentioned annealing in process operation, after the line irradiation stops, can cooling electronic components seal in the short time.Therefore, do not need to establish refrigerating work procedure in addition and spended time.In addition, owing to carry out annealing in process by the line irradiation herein, can in the same Processing Room that keeps vacuum state, carry out annealing in process operation and interconnecting part line welding sequence continuously.So, do not need to be used for the formation of annealing in process, Processing Room of using of annealing in process etc. for example, and do not need conveyance of the electronic component encapsulation body between two-step etc.Therefore, can reduce installation cost, improve the manufacturing efficient of electronic component encapsulation body simultaneously, especially, if adopt same line to carry out annealing in process operation and interconnecting part line welding sequence, then above-mentioned effect is more effective.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in described annealing in process operation, described line is shone in a place or the many places of the diapire of described container.In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in described annealing in process operation, described line is shone in a place or the many places of a sidewall of described container.In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in described annealing in process operation, described line is shone in a place or the many places of a plurality of sidewalls of described container.
According to above-mentioned formation, in the annealing in process operation, can heat efficiently.Especially, when the line irradiation is carried out in the many places of the diapire of container and sidewall, and when a plurality of sidewalls being carried out the line irradiation, can further improve the efficiency of heating surface.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in described annealing in process operation, repeatedly shines described line off and on.According to above-mentioned formation, the heat that produces in the time of can reducing the line irradiation in the annealing in process operation is to the damage (damage) of electronic component encapsulation body.So, can access the electronic component encapsulation body of high-quality.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in described annealing in process operation, laser is shone as described line.According to above-mentioned formation, the heat that produces in the time of can reducing the line irradiation in the annealing in process operation is to the damage (damage) of electronic component encapsulation body.So, can access the electronic component encapsulation body of high-quality.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, before described annealing in process operation, so that the state of the interconnecting part of the described resettlement section of the residual described container of small part and outside, the described sealing material of fusion engages described container and described lid, after described annealing in process operation, seal described interconnecting part.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, also comprised before or after described annealing in process operation: described container has through hole in advance as described interconnecting part, to the through hole sealing material filling procedure of described through hole filling through hole sealing material, to described through hole sealing material irradiation line, the described through hole sealing material filling by fusion seals described through hole.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, described through hole is set on the diapire of described container, and configuring external connection electrode on the described diapire of described container is in described annealing in process operation, to the described line of area illumination of the described diapire the configuring area of and described external connecting electrode regional except that the formation of described through hole.
According to above-mentioned formation, can be by the through hole of container, the gas that discharge produces in the annealing in process operation etc.Thus, can realize good vacuum degree in the electronic component encapsulation body, its result can improve the characteristic or the reliability of the electronic component of electronic component encapsulation body inside.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in the manufacture method of electronic component encapsulation body, it is characterized in that, at least comprise: have opening and passing through the periphery of this opening the described opening of the container in the resettlement section of taking in electronic element in inside (hereinafter referred to as " container "), via the sealing material that the lid (hereinafter referred to as " lid ") that makes described container and the described opening that covers described container engages, dispose the operation of described lid; A welding sequence, it is at the described container that utilizes described sealing material to engage and the junction surface of described lid, the subregion of removing regulation is with external radiation exposure first line, the described sealing material in the zone of fusion except that this subregion, come described container of welded seal and described lid, and form the i.e. welding portion not of the described resettlement section of described container and outside interconnecting part in this subregion; The annealing in process operation, it is for the unencapsulated described electronic component encapsulation body of the state of the described not welding portion that has kept forming by a described welding sequence, and at least one of described container and described lid shone second line; With the secondary welding operation, it shines described the 3rd line through after being used for discharging the stipulated time of the gas in the described container from described not welding portion to described not welding portion, comes the described not welding portion of welded seal.
According to above-mentioned formation, by the annealing in process operation, never welding portion is discharged effectively and is derived from the gas that produces attached in the gas of the volatile ingredient on the container or the welding sequence.Thus, can realize good vacuum degree in the electronic component encapsulation body, its result can improve the characteristic or the reliability of the electronic component of electronic component encapsulation body inside.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, described annealing in process operation will be identical with described first line that adopts in the described welding sequence line as described second line, in the mode of the irradiation of describing described first beam trace, shine a place or many places on the irradiation track of described first line in a described welding sequence.According to above-mentioned formation, the track of the line that in the annealing in process operation, forms, consistent with the beam trace that in a welding sequence, forms.Therefore, in the electronic component encapsulation body of finishing, can realize good surface appearance.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, described at least first line and described second line are electron beam or laser.According to above-mentioned formation, because can be, carry out welding sequence and annealing in process operation continuously, so can carry out rapidly discharging to the gas of Processing Room from the inside of electronic component encapsulation body at the Processing Room internal radiation electron beam of vacuum state.In addition, owing to can adopt same electron beam processing unit (plant) to carry out annealing in process operation and a welding sequence,, improve the manufacturing efficient of electronic component encapsulation body simultaneously so can reduce installation cost.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, the output valve of described second line that adopts in described annealing in process operation is lower than the output valve of described first line that adopts in a described welding sequence.According to above-mentioned formation, the heat that produces in the time of can reducing the line irradiation in the annealing in process operation is to the damage (damage) of electronic component encapsulation body.So, can access the electronic component encapsulation body of high-quality.In addition, in the annealing in process operation, can prevent to seal the material fusion, thereby can prevent the welded seal of non-intention.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, in a described welding sequence, divide the irradiation of carrying out described first line more than the secondary, between the initial point and the initial point in the line irradiation for the second time in the line irradiation first time, with this two initial point is two ends, forms described not welding portion.
As concrete example, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, a described welding sequence, comprise: line irradiation process for the first time, first with the end that becomes described not welding portion is initial point, described first line of outer circumferential prescribed direction sequential scanning along described lid, to be positioned at than second of the other end that becomes described not welding portion thirdly is terminal point by line scanning direction upstream side more, shine described first line, be sealed to thirdly described from described first means of spot welds; With the line irradiation process second time, described second with the other end that becomes described not welding portion is initial point, outer circumferentially direction sequential scanning described first line relative along described lid with described prescribed direction, at least shine described first line to as described first time the line irradiation process terminal point thirdly, be sealed to thirdly describedly from described second means of spot welds, form described not welding portion.
According to above-mentioned formation, because can form with line irradiation initial point is the not welding portion at two ends, compare so constitute the situation in the past of end with irradiation terminal point by electron beam, can be in the position of expectation and form not welding portion accurately with the width of expectation.Therefore, can further improve the vacuum degree of electronic component encapsulation body inside, its result can further improve the characteristic or the reliability of the electronic component of electronic component encapsulation body inside.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, described container has square shape, in a described welding sequence, with four bights of described container be contained in described first and described thirdly between or be contained in described and described mode between thirdly at second, set described first point, described and described thirdly position at second.According to above-mentioned formation, because the airtight sealing in welding portion zone does not in addition improve, so can improve quality percentage.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, before a described welding sequence, also comprise described lid point is fixed in operation on the described container, in the described first time of a described welding sequence and for the second time in the line irradiation process, the point that removes described lid and described container admittedly the area configurations partly as described first and described second point of the irradiation initial point of described first line.According to above-mentioned formation, owing to can prevent to be configured in the skew of the lid on the container, and can carry out the line irradiation, so can improve rate of finished products and production efficiency.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in described secondary welding operation, electron beam or laser is shone as described the 3rd line, to carry out described welded seal.According to above-mentioned formation, though when welded seal, because of irradiating electron beam or laser produce gas in container, never welding portion is discharged this gas, keeps high vacuum state, carries out welded seal simultaneously.Herein, in the irradiation of electron beam or laser, be difficult to control the terminal point of line irradiation, but according to the present invention, because the initial point by the line irradiation constitutes the not two ends of welding portion as mentioned above, so can easily form not welding portion accurately, thereby can keep better high vacuum state, carry out welded seal simultaneously with the width of expectation and in the position of expectation.Especially, if in the secondary welding operation, adopt laser, then, can carry out the not dot encapsulation of welding portion by the not welding portion local irradiation laser little to width.
In addition, the manufacture method of electronic component encapsulation body of the present invention, in foregoing invention, it is characterized in that, utilize the described welded seal of the irradiation of described first line at least one operation of a described welding sequence or described secondary welding operation or described the 3rd line, comprising: preheating line irradiation process, it is as preheating procedure, utilize the irradiation of described first line or described the 3rd line, described container, described lid and described sealing material are heated to set point of temperature; With welding line irradiation process, the irradiation that it utilizes described first line or described the 3rd line makes the fusion of described sealing material, welds described container and described lid via described sealing material.In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in described preheating line irradiation process, welding region is repeatedly shone described first line or described the 3rd line.According to above-mentioned formation, can carry out welded seal reliably in the part of expectation along the periphery of lid.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that, in advance the described sealing material of configuration on described container.According to above-mentioned formation, when the irradiation line, needn't as in the past, adopt anchor clamps to fix container and lid.
In addition, the manufacture method of electronic component encapsulation body of the present invention in foregoing invention, is characterized in that described electronic component is a quartz crystal.According to above-mentioned formation, because the inside of electronic component encapsulation body is kept high vacuum state, so can reduce the equivalent serial resistance value (CI value) of quartz crystal.Therefore, it is certain and have an electronic component encapsulation body of the quartz crystal of stable oscillating characteristic to realize possessing quality.
In addition, electronic component encapsulation body of the present invention is characterized in that, is that the manufacture method of the electronic component encapsulation body by foregoing invention is made.In the electronic component encapsulation body of above-mentioned formation, keep high vacuum state in the container, therefore can realize good device property and stable high reliability.
Manufacture method and electronic component encapsulation body according to electronic component encapsulation body of the present invention, the gas that produces from the sealing material in the time of can preventing to weld or remain in the seal attached to container or (volatile ingredients) such as impurity the atmosphere on the lid or moisture of electronic component encapsulation body, therefore, can make the inside of electronic component encapsulation body form high vacuum state.Therefore, be accommodated in the electronic component in inner, gas that produces in the time of can be because of welding or the gas that is derived from volatile ingredient cause timeliness, thereby can prevent the deterioration of the characteristic of electronic component or reliability etc.
In addition, owing to can adopt the line identical to come annealing in process container or lid with the line that uses in the welding sequence, so welder directly can be also used as heating furnace in the past.That is, do not need to be used for the heater assembly and the conveyance pallet of long-time whole heating container or lid, and the water cooling plant and the conveyance pallet that are used to cool off the part after integral body heats afterwards.Therefore, can reduce installation cost, simplify manufacturing process simultaneously, shorten blanking time.Therefore, can make the high electronic component encapsulation body of reliability efficiently with superperformance.
Description of drawings
Fig. 1 is the flow chart of each operation in the manufacture method of packaging body of expression embodiments of the present invention 1.
Fig. 2 is the cutaway view that utilizes the signal of the packaging body that the manufacture method of Fig. 1 makes.
Fig. 3 is the vertical view of signal of illuminating method of laser of annealing in process operation that is used for the manufacture method of key diagram 1.
Fig. 4 is the vertical view of signal of other example of illuminating method of laser of annealing in process operation that is used for the manufacture method of key diagram 1.
Fig. 5 is the vertical view of signal of illuminating method of laser of welding sequence that is used for the manufacture method of key diagram 1.
Fig. 6 is the bottom plan view of the employed container of manufacture method of the packaging body of embodiments of the present invention 2.
Fig. 7 is the cutaway view of signal of welding sequence of manufacture method that is used to illustrate the packaging body of embodiments of the present invention 2.
Fig. 8 is the cutaway view of signal of welding sequence of manufacture method that is used to illustrate the packaging body of embodiments of the present invention 2.
Fig. 9 is the cutaway view of signal of welding sequence of manufacture method that is used to illustrate the packaging body of embodiments of the present invention 2.
Figure 10 is the flow chart of each operation in the manufacture method of packaging body of expression embodiments of the present invention 3.
Figure 11 is the vertical view of signal of illuminating method of electron beam of a welding sequence that is used for illustrating the manufacture method of Figure 10.
Figure 12 is the vertical view of signal of illuminating method of electron beam of a welding sequence that is used for illustrating the manufacture method of Figure 10.
Figure 13 is the vertical view of signal of illuminating method of electron beam of annealing in process operation that is used for illustrating the manufacture method of Figure 10.
Figure 14 is the vertical view of signal of illuminating method of electron beam of secondary welding operation that is used for illustrating the manufacture method of Figure 10.
Figure 15 is that illustration adopts the manufacture method of Figure 10 to make the vertical view of signal of the method for a plurality of packaging bodies simultaneously.
Figure 16 is that illustration adopts the manufacture method of Figure 10 to make the vertical view of signal of the method for a plurality of packaging bodies simultaneously.
Figure 17 is that illustration adopts the manufacture method of Figure 10 to make the vertical view of signal of the method for a plurality of packaging bodies simultaneously.
Figure 18 is that illustration adopts the manufacture method of Figure 10 to make the vertical view of signal of the method for a plurality of packaging bodies simultaneously.
Figure 19 is the vertical view of signal of illuminating method of electron beam of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 4.
Figure 20 is the vertical view of signal of illuminating method of electron beam of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 5.
Figure 21 is the vertical view of signal of illuminating method of electron beam of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 6.
Figure 22 is the vertical view of signal of illuminating method of electron beam of a welding sequence of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 7.
Figure 23 is the vertical view of signal of illuminating method of electron beam of a welding sequence of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 7.
Figure 24 is the vertical view of signal of illuminating method of electron beam of three electron-beam irradiation process of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 7.
Figure 25 is the vertical view of signal of illuminating method of electron beam of secondary welding operation of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 7.
Figure 26 is the flow chart of each operation of manufacture method of the packaging body of expression embodiments of the present invention 8.
Figure 27 is the result's of expression embodiment and comparative example figure.
Figure 28 is the vertical view of signal of an example of representing the manufacture method of packaging body in the past.
Figure 29 is the vertical view of signal of another example of representing the manufacture method of packaging body in the past.
Figure 30 is the vertical view of the signal of an example again of representing the manufacture method of packaging body in the past.
Among the figure: the 1-quartz crystal, the 2-container, the 3-lid, 4-seals material, the 5-supporting station, 6-engages material, 10A, 10B, 10C, 10D-electron beam, 15-is welding portion not, 20-packaging body, 500-through hole, 600-through hole sealing material.
Embodiment
Below, the manufacture method of the electronic component encapsulation body that present invention will be described in detail with reference to the accompanying and utilize the suitable execution mode of the electronic component encapsulation body that this manufacture method makes.Herein, as the electronic component encapsulation body, be illustrated in the container and take in, be sealed with the quartz crystal seal as the quartz crystal device of electronic component, especially the explanation surface is equipped with the electronic component encapsulation body of quartz crystal.In addition, in the following, abbreviate the quartz crystal seal as packaging body.
(execution mode 1)
Fig. 1 is the flow chart of each operation in the manufacture method of packaging body of expression embodiments of the present invention 1.In addition, Fig. 2 is the cutaway view that utilizes the signal of the packaging body that the manufacture method of Fig. 1 makes.In addition, Fig. 3～Fig. 5 is the vertical view of signal of each operation that is used for the manufacture method of key diagram 1.Particularly, the illuminating method of the laser in the annealing in process operation of Fig. 3 and Fig. 4 presentation graphs 1, the track of the laser in the welding sequence of Fig. 5 presentation graphs 1.Electron beam, ion beam, laser (Solid State Laser, gas laser, semiconductor laser), microwave be can use as line, but electron beam and semiconductor laser especially easily used.Situation when in the present embodiment, use laser being described.
As shown in Figure 1, in the manufacture method of the packaging body of present embodiment, at first, in the container 2 of Fig. 2, take in quartz crystal 1 (step S101).As shown in Figure 2, container 2 constitutes by diapire with along the sidewall of the periphery of diapire configuration, has the box-formed shape of the rectangle of upper opening.As the constituent material of container 2, can enumerate pottery, metal, resin etc., but container 2 is made of herein pottery.In addition, the very little method of container 2 is long limit 4.1mm, minor face 1.5mm herein, reach high 0.7mm.Dispose supporting station 5 in the bottom surface of container 2, on supporting station 5, dispose quartz plate abreast as quartz crystal 1 with the bottom surface of container 2 via engaging material 6.Thus, be implemented in the structure of taking in quartz crystal 1 in the container 2.
As quartz crystal 1, adopt tuning-fork-type quartz crystal herein, with U word shape.In this case, disposed the rising portions of U word along the long limit of container 2.
Configuration in container 2 like that as mentioned above, take in after the quartz crystal 1,, lid 3 is disposed at above the sidewall of container 2 via sealing material 4 in the mode of the opening of airtight container 2.Then, from the rolling disc type electrode (not shown) of two minor face central portions pushing resistance welding machines of lid 3 side direction lids 3,, lid 3 resistance welded puts on container 2 consolidate (tack welding) (step S102 of Fig. 1) thus at minor face central portion two places.Herein, the rolling disc type electrode of this resistance welding machine is equivalent to the external connecting electrode of metal.In addition, the minor face central portion to lid 3 has carried out a little admittedly herein, but also can push, put the part beyond the solid minor face central portion.
As shown in Figure 2, lid 3 has the periphery shape unanimous on the whole of viewed in plan periphery and container 2.Lid 3 is made of metal, is made of iron-based alloy (Kovar alloy) herein.The sealing material 4 that is clipped between container 2 and the lid 3 is made of the metal solder, the metal solder that has adopted gold-tin alloy, silver alloy and aluminium alloy etc. to constitute herein.And, sealing material 4 is pre-configured in above the sidewall of container 2.
In addition, though not shown among Fig. 2, on the sidewall of container 2, be provided with the flash coating that constitutes by tungsten, on this flash coating, further be provided with nickel coating, Gold plated Layer.And, will seal material 4 and be located in advance on this Gold plated Layer.By configuration sealing material 4 on the sidewall of container 2 so in advance, during laser radiation in welding sequence described later (the step S105 of Fig. 1), welded cover 3 and sealing material 4 get final product, and the lid 3 that thermal conductivity is good welds with sealing material 4 easily.In addition, also can in advance sealing material 4 be configured in lid 3 sides.
3 of lids are fixed in after the container 2, like this regulation area illumination laser of container 2.Thus, heat drying is removed attached to volatile ingredients such as impurity in the atmosphere on lid 3 or container 2 or the sealing material 4 or moisture by the packaging body 20 that container 2 and lid 3 etc. constitutes.Herein, will handle based on the degassing of the nonvolatile component of this heating and be called annealing in process (the annealing in process process S103 of Fig. 1).The irradiation area of the laser among the annealing in process process S103 is not particularly limited, if but to the lid 3 that constitutes by metal or to external connecting electrode (not shown) irradiating laser of the metal of being located at container 2, then cause the reflection of line, the efficiency of heating surface descends.Therefore, in packaging body 20, preferably to the zone of the external connecting electrode of removing lid 3 and container 2, particularly to the regulation area illumination laser 10 of the container 2 of ceramic.
For example, as shown in Figure 3, can carry out annealing in process to the outer surface irradiation laser 10 of the diapire of container 2.In this case, the regulation zone of the diapire outside that laser 10 can point-like exposure cage 2 in addition, also can be carried out the line irradiation at the regulation sector scanning laser 10 of diapire outside.The irradiation of such laser 10 can be carried out once, perhaps also can repeatedly carry out off and on.Particularly, can be to the same area of the diapire of container 2 outside irradiating laser 10 off and on repeatedly, in addition, also can be to different a plurality of zones, position one or many irradiating laser 10 off and on respectively.
In addition, as shown in Figure 4, can carry out annealing in process to the sidewall outer irradiating laser 10 of container 2.In this case, the regulation zone of the outside, side that laser 10 can point-like exposure cage 2 in addition, also can be carried out the line irradiation at the regulation sector scanning laser 10 of sidewall outer.For example, can be in the outside of a sidewall of container 2, with the situation of the above-mentioned diapire of irradiation similarly, to the same area one or many irradiating laser 10 off and on, in addition, also can distinguish one or many irradiating laser 10 off and on to a plurality of different zone of a sidewall outer.Perhaps, also can on the surface of a plurality of sidewalls of container 2, carry out the irradiation of such laser 10 to each sidewall.
If repeatedly carry out the irradiation of laser 10 off and on, then can reduce damage (damage) herein, to packaging body 20 (particularly, the container 2 of illuminated laser 10).In addition, if the irradiation of laser 10 is carried out in a plurality of different zones respectively, then can improve the efficiency of heating surface of packaging body 20.
The output valve of laser 10 can be identical with the output valve of laser 10 (with reference to Fig. 5) among the welding sequence step S105 of Fig. 1 described later, perhaps also can be lower than it.The output valve of laser 10 is set for the output valve that is lower than the laser 10 among the welding sequence step S105 herein.Particularly, the so-called low output valve of output valve than the laser 10 among the welding sequence step S105 is meant the sealing material 4 line output valve of fusion hardly.
In addition, the illuminate condition of the laser 10 among the annealing in process process S103 (with reference to Fig. 1), for example line irradiation time or line irradiation place number or line scanning distance etc., suitably set according to realizing the condition of annealing in process effectively, particularly, suitably set according to the size of packaging body 20, the material of container 2 etc.
Such annealing in process process S103 adopts laser processing device in the past to carry out, and in the Processing Room that keeps vacuum state container 2 irradiating lasers 10 is handled.For example, in laser processing device, the irradiation head by making movable laser 10 suitably moves, can be to the position irradiating laser 10 of the expectation of container 2.
Be derived from the gas of the volatile ingredient that produces by annealing in process, after the irradiation of Fig. 3 or laser 10 shown in Figure 4,, be discharged to (the step S104 of Fig. 1) in the Processing Room in Processing Room by inside from packaging body 20 by packaging body 20 is placed the stipulated time.Herein, owing to keep vacuum state in the Processing Room, so can carry out exhaust efficiently.Thus, can high vacuum state will be kept in the packaging body 20.
Herein, as shown in Figure 2, between container 2 and lid 3 via 4 configurations of sealing material, the tack welding part that the step S102 mid point of removing at Fig. 1 is solid has formed the interconnecting part that the outside (particularly in the Processing Room) of the volume inside (being the resettlement section) that makes the container 2 of taking in quartz crystal 1 and container 2 is communicated with.Therefore, via this interconnecting part, can discharge the gas that is derived from volatile ingredient that utilizes annealing in process to remove to the outside of packaging body 20 (being in the Processing Room).
After in the step S104 of Fig. 1, having carried out the discharge of gas, as shown in Figure 5, in Processing Room, continue to carry out the line irradiation along its periphery to prescribed direction sequential scanning laser 10, with this complete sealed package 20 (the welding sequence step S105 of Fig. 1) from lid 3 sides of packaging body 20.Herein, in a consistent mode in P place, the periphery of single pass lid 3 is all entirely with the initial point of line irradiation and terminal point.By the irradiation of such laser 10, the sealing material 4 of Fig. 2 is heated and fusion, thus, utilizes the described interconnecting part between sealing material 4 welded vessels 2 and the lid 3, is sealed to packaging body 20.Therefore, herein, welding sequence step S105 is equivalent to interconnecting part line welding sequence.In addition, herein, in welding sequence step S105, to clockwise identical scanning direction laser 10, but also can to opposite scanning direction laser 10 clockwise.In addition, becoming the position of the some P of the initial point of line irradiation and terminal point, also can be beyond the position of Fig. 5.
As mentioned above, manufacture method according to the packaging body of present embodiment, because annealing in process and welding sequence step S105 among the annealing in process operation S103 adopt laser 10 to carry out equally, so can adopt same laser processing device in same Processing Room, implement the discharge process S104 of annealing in process process S103, gas and each processing among the welding sequence step S105.Therefore, do not need to be provided in addition the structure (for example, the preceding chamber of essential in the past sealing Processing Room or back chamber etc.) of annealing in process, thereby, installation cost can be reduced.In addition, owing to can in same Processing Room, carry out each operation of step S103～step S105 continuously, so do not need the conveyance etc. of the packaging body 20 of each inter process.Thereby, can improve the manufacturing efficient of packaging body 20, carry out the discharge of gas simultaneously effectively.
In addition, in the annealing in process that has adopted laser 10, line illuminated portion and be close to closely that the temperature in zone is local sharply to rise, afterwards, if stop the line irradiation, then the temperature of these parts will sharply descend.Therefore, with adopted heating plate or heating lamp to add heat-sealing body 20 integral body to carry out the situation of annealing in process and compare, can efficiently packaging body 20 be heated to high temperature respectively, can cool off efficiently simultaneously, so do not need to be provided with in addition refrigerating work procedure in the past.Therefore, consider, also can improve the manufacturing efficient of packaging body 20 from this point.
, when the manufacturing of packaging body 20, in a collection of, carry out a series of manufacturing process and come manufacturing and encapsulation body 20 usually, and in a collection of, a plurality of packaging bodies 20 are implemented each and handle, make a plurality of packaging bodies 20 simultaneously.Particularly, herein, in the Processing Room of laser processing device, interval multiple row multirow in accordance with regulations disposes a plurality of packaging bodies 20.And, in annealing in process process S103, each packaging body 20 is carried out in turn the irradiation of Fig. 3 or laser 10 shown in Figure 4 and carry out annealing in process, afterwards, in welding sequence step S105, each packaging body 20 is carried out in turn the irradiation of laser shown in Figure 5 10 and carry out the sealing of packaging body 20.
In a plurality of packaging bodies 20 being carried out in turn the annealing in process process S103 of line irradiation respectively, be heated the packaging body 20 that is annealed processing by the line irradiation, during other the processing of packaging body 20, discharge gas and also be cooled.Therefore, even do not reset the discharge process S104 of gas in addition, also can discharge gas naturally efficiently.In addition, even do not reset refrigerating work procedure in addition, also can cool off efficiently naturally.
In addition, in above-mentioned, in annealing in process process S103 and welding sequence step S105, illustrated by irradiating laser 10 and carried out the situation that each is handled, but also can in these process S103, step S105, replace laser 10 to be undertaken each and handle by irradiating electron beam.For example, adopting electron beam to carry out under the situation of annealing in process, owing to do not exist as laser 10, so can shine to any one of lid 3 and container 2 by the situation of metallic reflection.But, to container 2 irradiating electron beams the time, because container 2 can suitably reduce output valve because of the heat that produces sustains damage so consider this situation.
Herein, in annealing in process process S103, adopt under the situation of electron beam, compare, because electron beam is big to the damage (damage) of packaging body 20 with the situation that adopts laser 10, so consider influence, carry out the line irradiation with suitable output to packaging body 20.In addition, for example, if to the regional point-like irradiating electron beam of the regulation of container 2, then the damage (damage) to this zone can increase the weight of.Therefore, under the situation that adopts electron beam, preferably carry out the line irradiation by the scanning line.In addition; if carry out the line irradiation by scanning beam; then because the irradiation track of electron beam can bring influence to the outward appearance of packaging body etc., so preferably in welding sequence S105, make the track of laser 10 of irradiation and consistent scanning of track of electron beam.
(execution mode 2)
Fig. 6～Fig. 9 is the figure of manufacture method that is used to illustrate the packaging body of embodiments of the present invention 2.Particularly, Fig. 6 is a vertical view of observing the employed container of packaging body of present embodiment from the bottom, and Fig. 7～Fig. 9 is the cutaway view of signal of welding sequence of manufacture method of the packaging body of expression present embodiment.
The situation of the manufacture method of the packaging body of present embodiment and execution mode 1 similarly, comprise each the treatment process step S101～S105 shown in the flow chart of Fig. 1, be the manufacture method of the packaging body 20 of shop drawings 2, but different with execution mode 1 in the following areas.
As shown in Figure 6, in the packaging body 20 of present embodiment,, be provided with the through hole 500 of the external communications of the inside (that is the resettlement section of the quartz crystal 1 of container 2) that makes packaging body 20 and packaging body 20 in the bottom of container 2.Therefore, herein, through hole 500 is equivalent to interconnecting part.
As shown in Figure 7, the bottom of container 2 constitutes by lamination two sides base plate 601,602, at first base plate 601 that is configured in the outside be configured on the second inboard base plate 602, is respectively equipped with circular through hole 603,604.
The through hole 603 of first base plate 601 and the through hole 604 of second base plate 602, at lamination first base plate 601 and second base plate 602 and when having formed the bottom surface of container 2, viewed in plan disposes the part in hole overlappingly, thus, makes up two through holes 603,604 and forms through hole 500.In this through hole 500, the part that through hole 603,604 does not overlap each other in the hole, outstanding respectively first base plate 601 and second base plate 602 form through hole stepped in the hole 500 thus.
The manufacture method of the packaging body of present embodiment is described then.At first, in the present embodiment, with the situation of execution mode 1 similarly, carry out the processing of step S101 and the step S102 of Fig. 1.Then, packaging body 20 being configured in the laser processing device, in keeping the Processing Room of vacuum state, from lid 3 sides of packaging body 20 irradiating laser 10 as shown in Figure 5, is a P with initial point and terminal point, spreads all over peripheral complete all scan lasers 10 of lid 3.Thus, sealing material 4 (with reference to Fig. 2) is in peripheral complete all fusions of lid 3, and lid 3 and container 2 weld fully.In addition, utilize laser 10 to carry out the welding of lid 3 and container 2 herein, but welding method is not limited to laser radiation, for example, can weld with heating lid 3 such as heating furnace or Halogen lamp LED and container 2, also can utilize the electron beam irradiation of easy scanning to weld.
In the welding of such container 2 and lid 3, for example, generation is derived from the volatile ingredient of sealing material 4 or attached to the gas of the volatile ingredient on the packaging body 20 etc., but herein, this gas is via the through hole 500 of the bottom that is configured in container 2, be discharged to outside (, in the Processing Room of vacuum state) herein from the inside of packaging body 20.
After the welding of having carried out container 2 and lid 3 as described above, utilize the method described in the execution mode 1, in the annealing in process process S103 of Fig. 1, carry out annealing in process.Thus, produce gas attached to the volatilization of the volatile ingredient on the packaging body 20 as previously mentioned.Herein, by packaging body 20 is placed the stipulated time in Processing Room, in Processing Room, the gas that is derived from this volatile ingredient is discharged to outside (that is, in the Processing Room) (the step S104 of Fig. 1) by through hole 500 from the inside of packaging body 20.
Herein, in annealing in process process S103, outside as shown in Figure 3 to the diapire of container 2 during surface irradiation laser 10, to except that the formation zone of through hole 500 and the area illumination laser 10 the external connecting electrode 501.
Then, as shown in Figure 7, need the through hole 500 of the bottom of blocking container 2, through hole is sealed material 600 fillings (configuration) in through hole 500.Herein, the surface with second base plate 602 is configured in roughly spherical through hole sealing material 600 in the through hole 603 of first base plate 601 contiguously.The operation that to carry out the configuration of such through hole sealing material 600 is called through hole sealing material filling operation.This through hole sealing material filling operation is carried out in the Processing Room of the laser processing device that keeps vacuum state.
In addition, in above-mentioned, illustration behind the annealing in process process S103 of Fig. 1, implement the situation of through hole sealing material filling operation, but through hole sealing material filling operation also can be implemented before annealing in process process S103.At this moment, need make the above-mentioned gas that produces among the annealing in process process S103 be discharged to the outside by the through hole 500 that is filled with through hole sealing material 600, but owing between through hole sealing material 600 and through hole 500, be formed with the gap, so can carry out the discharge of gas by this gap.
After above-mentioned through hole sealing material filling operation, the line welding of carrying out through hole 500 comes the packaging body 20 (the welding sequence step S105 of Fig. 1) of complete sealed picture 2.Particularly, as shown in Figure 8, to being seated in through hole sealing material 600 irradiating lasers 10 in the through hole 500, make 600 fusions of through hole sealing material selectively.Thus, as shown in Figure 9, the through hole of fusion sealing material 600 is filled to and stops up through hole 500 in the through hole 500, realizes the sealing fully of packaging body 20.
So in the present embodiment, the welding sequence step S105 of through hole 500 is equivalent to interconnecting part line welding sequence.In the manufacture method of the packaging body of the present embodiment of above-mentioned formation, with execution mode 1 similarly, annealing in process is carried out in irradiation by Fig. 3 or laser 10 shown in Figure 4, discharges the gas that is derived from the volatile ingredient that produces in the annealing in process via through hole 500 simultaneously.Therefore, can obtain and the identical effect of effect described in the execution mode 1.
In addition, in above-mentioned, the situation that adopts laser 10 to carry out the line welding of the welding of container shown in Figure 52 and lid 3 and through hole 500 shown in Figure 8 be illustrated, but also can replace laser 10, adopt electron beam to carry out these welding.
(execution mode 3)
Figure 10 is the flow chart of each operation in the manufacture method of packaging body of expression embodiments of the present invention 3.In addition, Figure 11～Figure 14 is the vertical view of signal of illuminating method of electron beam of each operation that is used for illustrating the manufacture method of Figure 10, and the track of the electron beam of irradiation has been carried out in expression to packaging body from the lid side.Particularly, Figure 11 and Figure 12 represent the track of the electron beam among the welding sequence step S203 of Figure 10, Figure 13 represents the track of the electron beam among the annealing in process process S204 of Figure 10, and Figure 14 represents the track of the electron beam among the secondary welding process S206 of Figure 10.
In the packaging body manufacture method of present embodiment, as shown in figure 10, at first in the container 2 of Fig. 2, take in quartz crystal 1 (step S201).Then, utilization is carried out the point solid (step S202) of lid 3 and container 2 in the method described in the step S102 of Fig. 1 of execution mode 1.Like this with 3 of lids solid on container 2 after, as Figure 11～shown in Figure 14, the periphery from lid 3 sides along lid 3 carries out the line irradiation to prescribed direction scanning beam 10A, 10B, 10C, 10D, makes sealing material 4 fusions of this illuminated portion.Thus, lid 3 is fixed on the container 2 sealed package 20.
As Figure 10～shown in Figure 14, the sealing process of packaging body 20 comprises: a welding sequence step S203 wherein, does not seal the zone beyond it as welding portion 15 is not residual regulation area illumination electron beam 10A, 10B; Annealing in process process S204, wherein to the regulation zone on the track of electron beam 10A to describe the mode irradiating electron beam 10C of this track, carry out annealing in process; Process S205, wherein gas that from the welding sequence of not welding portion 15 discharges that forms, produces or the gas that is derived from the volatile ingredient of annealing in process generation; With secondary welding process S206, wherein on one side welding portion 15 scanning beam 10D are not shone on one side, with complete sealed package 20, in addition, a welding sequence step S203 is divided into the first different line irradiation process step S203a of irradiation pattern (irradiation track) and the second line irradiation process step S203b respectively.
, the electron beam irradiation in the present embodiment adopts common electron beam processing unit (plant) to carry out.For the details of electron beam processing unit (plant), omit explanation herein, but the electron beam processing unit (plant) possesses at least: the electron gun that produces electron beam; Processing Room, the processing object thing (packaging body 20 that is equivalent to Fig. 2 herein) of portion's configuration within it, the electron beam that this processing object thing irradiation is produced welds simultaneously; Deflector with the advance route of controlling electron beam.
The electron beam that produces in the electron gun imports Processing Room by deflector, then by deflector control advance route, makes from lid 3 sides along its periphery and to shine at the beam trace of describing to expect as the packaging body 20 of Figure 11 of processing object thing.In the processing that utilizes such electron beam processing unit (plant), keep vacuum state in the device.In addition, deflector makes electron beam produce deflection by magnetic field, for example is made of coil etc.
When the sealing of packaging body 20,, be used to form a not welding sequence step S203 (with reference to Figure 10) of welding portion 15 at first as Figure 11 and shown in Figure 12.The width of welding portion 15 is not redefined for W, and the gas that produces when making it possible to discharge welding efficiently makes to keep high vacuum in the packaging body 20.Zone between the R of a P and point (below, being called not, welding portion forms zone 15 '), form the not welding portion 15 of Rack W by first and second line irradiation process step S203a, step S203b (with reference to Figure 10) herein.
Particularly, as shown in figure 11, at first an end that forms zone 15 ' with welding portion not (promptly, become a not end of welding portion 15) promptly to put P be initial point, from lid 3 sides to packaging body 20 irradiating electron beam 10A, then along the periphery of rectangular-shaped lid 3 to identical clockwise direction sequential scanning until a Q.Herein, with such first line irradiation process step S203a (with reference to Figure 10) that is called from a P to the irradiation with electron beam 10A clockwise equidirectional a Q.In the first line irradiation process step S203a, the point P that will become the initial point of line irradiation is set near a side the central authorities on a pair of long limit of lid 3, electron beam 10A peripheral sequential scanning one side's of 3 from a P along lid minor face, the opposing party's long limit, reaches the opposing party's minor face.In addition, the some Q that will become the terminal point of line irradiation is set in on one side with some P, and scanning beam 10A carries out the line irradiation until this Q.Herein, as shown in figure 12, some Q is positioned at the other end (that is, becoming the not other end of welding portion 15) that forms zone 15 ' than welding portion not and promptly puts R more by the upstream side of the scanning direction of electron beam 10A.
Described in prior art, when stopping the irradiation of electron beam 10A, increase the terminal processes of line irradiation speed etc. at a Q place.Such stopping in the action, be subjected to the influence of a spot of line irradiation in the terminal processes or preheating etc., in the zone of not wishing melting sealed material 4, particularly, form 15 ' zone, zone at not welding portion, sealing material 4 fusions and welding than more close some R of a Q.But, because promptly putting Q, the terminal point of electron beam 10A is set in not that welding portion forms zone in addition, zone 15 ', welding portion forms regional 15 ' so the influence that the irradiation of the electron beam 10A at some Q place stops can not to feed through to not.
Then, as shown in figure 12, it is initial point that the other end (that is, becoming the not other end of welding portion 15) that forms zone 15 ' with welding portion is not promptly put R, from lid 3 sides to packaging body 20 irradiating electron beam 10B.Electron beam 10B promptly puts Q towards the terminal point of the described first line irradiation process step S203a, along the periphery of lid 3 to the relative direction in line scanning direction of the first line irradiation process step S203a, promptly with opposite direction sequential scanning clockwise.Herein, the irradiation with the electron beam 10B of this from a R to a Q and clockwise opposite direction is called the second line irradiation process step S203b (with reference to Figure 10).
In addition, the terminal point with the second line irradiation process step S203b is made as a Q herein, but also can cross a Q, will more lean on the regulation place (that is the point of a more close P) in downstream, line scanning direction as terminal point than a Q.
In addition, in the second line irradiation process step S203b, as previously mentioned, to with the first line irradiation process step S203a in the relative scanning direction electron beam in line scanning direction, but the control of the scanning direction of such electron beam can easily be controlled by the deflector of described electron beam processing unit (plant).
When a Q place stops the irradiation of electron beam 10B, also similarly carry out terminal processes with the situation of the first line irradiation process step S203a.Therefore, stopping in the action, as previously mentioned at electron beam 10B, be subjected to the influence of a spot of line irradiation in the terminal processes or preheating etc., in the zone of not wishing melting sealed material 4, particularly, in zone than more close some P of a Q, sealing material 4 fusions and welding.But, because promptly putting Q, the terminal point of electron beam 10B is set in not that welding portion forms zone in addition, zone 15 ', so the influence that the irradiation of the electron beam 10B at some Q place stops, can not feeding through to not, welding portion forms regional 15 '.
By the first above line irradiation process step S203a and the second line irradiation process step S203b, sealing material 4 fusions of having shone the zone of electron beam 10A, 10B thus, are welded fixedly lid 3 and container 2 by sealing material 4.On the other hand, form zone 15 ', promptly put the zone between P and the some R, form the not welding portion 15 of Rack W at the not welding portion of not irradiating electron beam 10A, 10B.Herein, welding portion 15 is not equivalent to be communicated with the interconnecting part of the inner space (being the resettlement section) of the container 2 take in quartz crystal 1 (with reference to Fig. 2) and the outside of container 2 (particularly Processing Room is interior).
As previously mentioned, with Figure 29 and method in the past shown in Figure 30, from a P to clockwise identical scanning direction electron beam to a R, form under the situation of welding portion 15 not, it is consistent to be difficult to make the terminal point of line and an end of welding portion 15 not promptly to put R, therefore, be difficult to form not welding portion 15 by the width W of design.
Relative therewith, in the present embodiment, the point R that is equivalent to an end of welding portion 15 not is made of the initial point of the second line irradiation process step S203b, point R can not become the terminal point of line in the first line irradiation process step S203a or in the second line irradiation process step S203b, so an end that can make welding portion 15 not easily is with to put R consistent accurately.That is, it is characterized in that, between the scanning starting point of welding portion 15 in two kinds of different line 10A, 10B irradiations of processing graphic pattern, is not that two ends form with this two initial point P, R.
In addition, terminal point at the first line irradiation process step S203a is promptly put the Q place, the sealing material 4 of part of crossing a Q is because of fusions such as waste heats, but since some Q and peripheral part thereof have nothing to do with the formation of welding portion 15 not, so do not need to control accurately the position of terminal point herein.
Therefore, according to the method for present embodiment, can accurately and easily inciting somebody to action not by design, welding portion 15 be formed between a P and the some R.Its result, the formation boundary of the width W of the not welding portion 15 about 0.5mm was brought up to about 0.2mm in the past.In fact, if consider the rate of finished products of packaging body 20, then can stably form the not welding portion 15 of 0.5mm width W.
After forming not welding portion 15 as mentioned above like that, as shown in figure 13, () regulation zone in other words, on the track of electron beam 10A is with the mode irradiating electron beam 10C of the track of describing electron beam 10A to the illuminated portion of electron beam 10A.By the irradiation of such electron beam 10C, heat drying packaging body 20 carries out annealing in process (the annealing in process process S204 of Figure 10).Particularly, be initial point with the some S on the track that does not form the electron beam 10A on the long limit of welding portion 15 not, from lid 3 sides to packaging body 20 irradiating electron beam 10C, along the some T that scans on the track of electron beam 10A on the track that terminal point is electron beam 10A.Therefore, the track of electron beam 10C is consistent with the beam trace of electron beam 10A.
The output valve of electron beam 10C can be identical with the output valve of electron beam 10A, 10B among the welding sequence step S203 of Figure 10, perhaps also can be lower than it.Herein, the output valve of setting electron beam 10C than the output valve lowland of electron beam 10A, 10B repeatedly scans.The so-called output lower than electron beam 10A, 10B is meant the sealing material 4 line output valve of fusion hardly.
In addition, in above-mentioned, illustration behind the welding sequence step S203 of Figure 10, implement the situation of annealing in process process S204, but annealing in process process S204 also can carry out before a welding sequence step S203.
In addition, the scanning distance of electron beam 10C (particularly, the distance of point S and some T), suitably set according to the distance of the annealing in process of the irradiation that can realize utilizing electron beam 10C effectively, particularly, according to the size of packaging body 20, the material of container 2 etc., suitably set the scanning distance of electron beam 10C.
By the irradiation of electron beam 10C, packaging body 20 is heated drying in the Processing Room of the vacuum state of electron beam processing unit (plant), and especially the integral body of container 2 is heated at short notice.Then, in the packaging body 20 after heating, the gas that in the welding of an above-mentioned welding sequence step S203, produces, via being formed on the not opening of welding portion 15 (being interconnecting part), be discharged to the outside from the inside of packaging body 20, the gas that volatilizees and form because of annealing in process attached to the volatile ingredient on container 2 or the lid 3 etc. simultaneously via being formed on the not opening of welding portion 15 (being interconnecting part), is discharged to outside (the step S205 of Figure 10) from the inside of packaging body 20.
In this case, the inside of packaging body 20 is communicated with the Processing Room of electron beam processing unit (plant) by the not welding portion 15 as unencapsulated opening, and this Processing Room is a vacuum state especially herein, so promote gas from packaging body 20 interior discharges in Processing Room, carry out the discharge of gas efficiently.Therefore, can high vacuum state will be kept in the packaging body 20.At this moment, after annealing in process process S204,, promote the discharge of gas naturally in Processing Room by packaging body 20 is placed the stipulated time.
Carried out as above-mentioned gas discharge (the step S205 of Figure 10) afterwards, as shown in figure 14,, make not sealing material 4 fusions of welding portion 15, thus sealed package 20 fully to 15 scannings of welding portion not, irradiating electron beam 10D.Herein, with such sealing not the operation of welding portion 15 be called secondary welding process S206 (with reference to Figure 10), this secondary welding process S206 is equivalent to interconnecting part line welding sequence.
In the secondary welding process S206 of Figure 10, as shown in figure 14, never an end of welding portion 15 is promptly put R and is promptly put P scanning beam 10D towards the other end, carries out the line irradiation.Thus, weld not welding portion 15 and sealed package 20.In fact, because the distance of some P and some R is about 0.5mm,, shines by point-like and weld so also can replace electron beam 10D by laser.
In such secondary welding process S206, because welding region is narrower than the welding sequence step S203 of Figure 10, so follow the generation of gas of welding few.Therefore, can suppress the gas in the final inclosure packaging body 20, thereby can be good vacuum state below the 13Pa remaining on vacuum degree in the packaging body 20.
By each operation of such enforcement,, as shown in Figure 2, can make the packaging body 20 that constitutes via taking in quartz crystal 1 in the container 2 of sealing material 4 by the airtight high vacuum of lid 3 according to the packaging body manufacture method of present embodiment.
,, when the manufacturing of packaging body 20, in a collection of, carry out a series of manufacturing process and come manufacturing and encapsulation body 20 usually as described in the execution mode 1, and, in a collection of, a plurality of packaging bodies 20 are implemented each and handle, make a plurality of packaging bodies 20 simultaneously.Therefore, following illustration adopts the manufacture method of above-mentioned packaging body, makes the method for a plurality of packaging bodies 20 simultaneously.
In addition, in the following, a welding sequence step S203 from Figure 10 is described to secondary welding process S206, the operation beyond these is handled by method same.
Figure 15～Figure 18 is that illustration adopts above-mentioned manufacture method to make the vertical view of signal of the method for a plurality of packaging bodies 20 simultaneously, the vertical view of Processing Room 21 inside of expression electron beam processing unit (plant).Herein, in Processing Room 21, interval multiple row in accordance with regulations, multirow dispose a plurality of packaging bodies 20.
As shown in figure 15, at first in each packaging body 20 in being disposed at Processing Room 21, carry out the first line irradiation process step S203a (with reference to Figure 10) shown in Figure 11.In this case, for example, for row, by the packaging body 20 of each adjacency irradiating electron beam 10A in turn, after row finish, again to the row of adjacency irradiating electron beam 10A similarly.Perhaps, for delegation, by the packaging body 20 of each adjacency irradiating electron beam 10A in turn, after delegation finishes, again to the row of adjacency irradiating electron beam 10A similarly.By the suitable advance route of controlling electron beam 10A easily of deflector (not shown).
Then, as shown in figure 16, carry out the second line irradiation process step S203b (with reference to Figure 10) shown in Figure 12.In this case, with the above-mentioned first line irradiation process step S203a (with reference to Figure 10) similarly, to with same column or a plurality of packaging bodies 20 of colleague configuration mutually, by the packaging body 20 of each adjacency irradiating electron beam 10B in turn, after row or delegation finish, again to the column or row of adjacency irradiating electron beam 10B similarly.Thus, can on a plurality of packaging bodies 20, form not welding portion 15 respectively.
Herein, as the second above-mentioned line irradiation process step S203b in, because after a packaging body 20 irradiating electron beam 10B being formed not welding portion 15, in turn other packaging body 20 irradiating electron beam 10B are formed not welding portion 15, so in having formed not the packaging body 20 of welding portion 15, during to other packaging body 20 irradiating electron beam 10B, never welding portion 15 is discharged gas.Therefore, improve the discharge efficient of gas.
Then, as shown in figure 17, carry out annealing in process process S204 (with reference to Figure 10) shown in Figure 13.In this case, also with the above-mentioned first line irradiation process step S203a (with reference to Figure 10) similarly, to with same column or a plurality of packaging bodies 20 of colleague configuration mutually, by the packaging body 20 of each adjacency irradiating electron beam 10C in turn, after row or delegation finish, again to the column or row of adjacency irradiating electron beam 10C similarly.Thus, can carry out annealing in process respectively to a plurality of packaging bodies 20.
In such annealing in process process S204, because to a plurality of packaging bodies 20 irradiating electron beam 10C in turn, so during to other packaging body 20 irradiating electron beam 10C, can will be derived from the gas attached to the volatile ingredient on container 2 or the lid 3 etc. that annealing in process produces, never welding portion 15 is discharged.Therefore, do not need to reset the discharge operation of gas and spended time, can implement the discharge process S205 (with reference to Figure 10) of gas simultaneously with annealing in process process S204.
In addition, because can be during other packaging body 20 be implemented to handle, the packaging body 20 that natural cooling was handled, spended time so do not need to reset the refrigerating work procedure of packaging body 20.Therefore, realize the raising of the manufacturing efficient of packaging body 20.Promptly, if as in the past, carried out annealing in process with heating furnace, then owing to the pallet that is equipped with packaging body also together is heated, if so exist not by special refrigerating work procedure, just the temperature of packaging body can not be cooled to can line the problem of temperature of welding, and in the present invention owing to do not need anchor clamps such as heated tray, to each packaging body 20 monomers irradiation line and by each packaging body 20 heating, so the packaging body 20 crossed of natural cooling annealing in process at short notice.
On each packaging body 20, forming not welding portion 15 as mentioned above like that, carried out after the annealing in process then, as shown in figure 18, to the not welding portion 15 scanning beam 10D of each packaging body 20 and shine, carry out secondary welding process S206 (with reference to Figure 10) shown in Figure 14 thus.In this case, also with the situation of an above-mentioned welding sequence step S203 (with reference to Figure 10) similarly, to with same column or a plurality of packaging bodies 20 of colleague configuration mutually, shine by the packaging body 20 sequential scanning electron beam 10D of each adjacency, after row or delegation finish, again to the column or row of adjacency scanning beam 10D and shining similarly.Thus, weld the not welding portion 15 of each packaging body 20 in turn, come complete sealed package 20.
In addition, in above-mentioned, the situation that adopts electron beam 10D has been described in secondary welding process S206, but the kind of line is not limited thereto, also can utilizes laser to weld.
In addition, in above-mentioned, illustrated in annealing in process process S204,, but be not limited thereto, also can carry out annealing in process the outer surface irradiation laser of the diapire of container 2 with the situation of the mode scanning beam 10C that on the track of electron beam 10A, describes.In this case, can in addition, also can carry out the line irradiation to the zone of the regulation outside the diapire of container 2 point-like irradiating laser by scanning.
According to above manufacture method,, can be effectively discharge and comprise the gas that is derived from attached in the packaging body 20 of the gas of the volatile ingredient on container 2 or the lid 3 etc. to the outside by the annealing in process among the annealing in process process S204 (with reference to Figure 10).Therefore, with the situation of execution mode 1 similarly, can improve the vacuum degree in the packaging body 20.
In addition, herein, in a welding sequence step S203 (with reference to Figure 10), because irradiating electron beam at twice, the not welding portion 15 that the initial point that the formation two ends are shone by line constitutes is so can form not welding portion 15 accurately.Therefore, the not welding portion 15 of the width W that can form expect on the correct position ground of expectation, and compared with the pastly can reduce the not width W of welding portion 15.
Therefore, can be and seal not welding portion 15 mistakenly for the width W that reduces welding portion 15 not, in addition, because the width W of welding portion 15 is compared with the past not little, so can be more in the past than the generation of the gas in the welding that further was reduced in secondary welding process S206 (with reference to Figure 10).Therefore, can further improve vacuum degree in the packaging body 20.
And, owing to improve like this vacuum degree in the packaging body 20, thus can be with the vacuum degree that remains in the packaging body 20 below the 13Pa, and its result can prevent the influence of the gas that produces when quartz crystal 1 is subjected to welding and produces the deterioration of characteristic or reliability.Therefore, can realize having the quartz crystal packaging body 20 of good characteristic and stable reliability.Particularly, in the packaging body of making by above-mentioned manufacture method 20, the equivalent serial resistance value (CI value) of quartz crystal 1 can be reduced, and the quartz crystal packaging body 20 that quality is certain and have stable oscillating characteristic can be realized.
In addition, as shown in figure 13, in the annealing in process process S204 (with reference to Figure 10) of said method, because the mode scanning beam 10C that describes on the track with the electron beam 10A of formation in a welding sequence step S203 (Figure 10 reference), so the track of electron beam 10C is consistent with the track of electron beam 10A, thereby, in the packaging body of finishing 20, can realize good surface appearance.
In addition, because the welding sequence step S203 of the annealing in process among the annealing in process process S204 and employing electron beam 10A, 10B similarly, adopt electron beam 10C to carry out, therefore can adopt same electron beam processing unit (plant) in same Processing Room, implement annealing in process process S204 and a welding sequence step S203.Therefore, do not need to be provided in addition the structure (for example, the preceding chamber of essential in the past sealing Processing Room or back chamber etc.) of annealing in process, thereby can reduce installation cost.In addition,, therefore can improve manufacturing efficient, carry out the discharge of gas simultaneously effectively owing in the Processing Room of vacuum state, carry out annealing in process process S204 continuously from a welding sequence.
In addition, the method for making a plurality of packaging bodies 20 simultaneously is not limited to said method.For example, in above-mentioned, on a plurality of packaging bodies 20, form respectively not after the welding portion 15, each packaging body 20 is carried out annealing in process, but also can carry out continuously after the formation and annealing in process of welding portion 15 not, form the not welding portion 15 of other packaging body 20 packaging body 20.
In this case, in the packaging body 20 after annealing in process, during the processing of carrying out other packaging body 20, can comprise the gas discharge that is derived from attached to the gas of the volatile ingredient on the container 2 efficiently.Therefore, can realize the effective gas discharge, and shorten gas and discharge the required time (being the required time of step S205 of Figure 10).
Perhaps, also can implement a Figure 11～welding sequence step S203, annealing in process process S204 shown in Figure 14, the discharge process S205 of gas continuously, reach secondary welding process S206 (with reference to Figure 10) a packaging body 20, after finishing a packaging body 20, next packaging body 20 is implemented to handle.
(execution mode 4)
Figure 19 is the vertical view of signal of electron beam illuminating method of annealing in process operation of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 4, and expression is radiated at the track of the electron beam on the packaging body.
As shown in figure 19, in the present embodiment, the direction of illumination of electron beam 10C ' of irradiation in annealing in process process S204 (with reference to Figure 10) is opposite with the direction of illumination of the electron beam 10C (with reference to Figure 13) of execution mode 1.
That is, in the present embodiment, be initial point with the some T on the track of electron beam 10A, be terminal point irradiating electron beam 10C ' with a S simultaneously.In the present embodiment of above-mentioned formation, also can access and the identical effect of effect described in the execution mode 3.
(execution mode 5)
Figure 20 is the vertical view of signal of electron beam illuminating method of annealing in process operation of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 5, and expression is radiated at the track of the electron beam on the packaging body.
As shown in figure 20, in the present embodiment, the electron beam 10C among the annealing in process process S204 (with reference to Figure 10) " irradiation position, different with the irradiation position of the electron beam 10C of execution mode 1.
Particularly, electron beam 10C " be initial point with the some S ' on the track of the electron beam 10A that forms on the minor face in the pair of short edges of packaging body 20 near some Q, on the track of electron beam 10A, scan terminal point and promptly put T '.In this case, electron beam 10C " scanning distance both can be identical with the scanning distance of the electron beam 10C of execution mode 1, in addition also can be different.Scanning distance is identical herein.In the present embodiment of above-mentioned formation, also can access and the identical effect of effect described in the execution mode 1.
From execution mode 3～5 as can be known, the scanning position of the electron beam of the annealing in process process S204 (with reference to Figure 10) in the manufacture method of packaging body of the present invention, so long as welding portion 15 (with reference to Figure 12) not and near beyond, can be any one on the track of the electron beam 10A that forms among the welding sequence step S203 (with reference to Figure 10) and electron beam 10B, the track both sides that also can spread all over track and the electron beam 10B of electron beam 10A.In addition, in annealing in process process S204, under near situation about scanning with electron beam 10C the welding portion 15 not, the possibility of influential not welding portion 15.
(execution mode 6)
Figure 21 is the vertical view of signal of electron beam illuminating method of annealing in process operation of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 6, and expression is radiated at the track of the electron beam on the packaging body.
As shown in figure 21, in the present embodiment, in annealing in process process S204 (with reference to Figure 10), with the mode of two place's region descriptions on the track of the electron beam 10A of formation in a welding sequence step S203 (with reference to Figure 10), scanning beam 10C ' and electron beam 10C ".For example, with above-mentioned execution mode 3 similarly irradiating electron beam 10C ' afterwards, with above-mentioned execution mode 5 irradiating electron beam 10C similarly ".
In the present embodiment of above-mentioned formation, also can access and the identical effect of effect described in the execution mode 3.In addition, present embodiment is in annealing in process process S204 (with reference to Figure 10), to many places irradiating electron beam 10C ', the 10C on the track of electron beam 10A " an example of formation, electron beam 10C ', 10C " the combination of irradiation position be not limited thereto.In addition, electron beam 10C ', the 10C on each irradiation position " the scanning direction also be not limited to this.In addition, also can carry out the line irradiation to the place more than two places.
In addition, in above-mentioned execution mode 3～6, the position of the first line irradiation process step S203a among the welding sequence step S203 (with reference to Figure 10) and the second line irradiation process step S203b (with reference to Figure 10) as the some Q of terminal point, be not limited to position shown in Figure 11, so long as ratio point R, then puts the just qualification especially of position of Q more by the scanning direction upstream side of electron beam 10A.
Below, illustrate that the some Q as terminal point of first and second electron beam irradiation process (the step S203a of Figure 10 and step S203b) becomes the execution mode of above-mentioned position in addition.
In addition, herein, illustration annealing in process process S204 (with reference to Figure 10) is the situation of the formation of execution mode 3, but the formation of annealing in process process S204 is not limited thereto, and also can be the arbitrary formation in the execution mode 4～6.
(execution mode 7)
Figure 22～Figure 25 is a welding sequence, annealing in process operation, and the vertical view of the signal of the electron beam illuminating method of secondary welding operation of manufacture method that is used for illustrating the packaging body of embodiments of the present invention 7, and expression is radiated at the track of the electron beam on the packaging body.
As Figure 22～shown in Figure 25, present embodiment is in a welding sequence step S203 (with reference to Figure 10), with execution mode 3 similarly, divide the first line irradiation process step S203a and the second line irradiation process step S203b (with reference to Figure 10) twice irradiating electron beam 10A, 10B, form not welding portion 15, but the position as the some Q ' of terminal point among the first line irradiation process step S203a is different with execution mode 3.
That is, as shown in figure 22, in the present embodiment, in the first line irradiation process step S203a (with reference to Figure 10), it is initial point that an end (that is, becoming a not end of welding portion 15) that forms zone 15 ' with welding portion is not promptly put P ', irradiating electron beam 10A.Then, along the periphery of rectangular-shaped lid 3, to clockwise identical direction sequential scanning electron beam 10A, make it arrive the opposing party relative and grow the some Q ' that disposes on the limit with the long limit of the lid 3 of collocation point P '.In the present embodiment, this Q ' becomes the terminal point of the first line irradiation process step S203a (with reference to Figure 10).
Then, as shown in figure 23, same with the situation of execution mode 3, in the second line irradiation process step S203b (with reference to Figure 10), it is initial point that the other end (that is, becoming the not other end of welding portion 15) that forms zone 15 ' with welding portion is not promptly put R ', irradiating electron beam 10B, along the periphery of lid 3 towards described some Q ', to the relative direction in line scanning direction of the first line irradiation process step S203a (with reference to Figure 10), promptly with opposite direction sequential scanning clockwise.
In addition, the terminal point with the second line irradiation process step S203b is made as a Q ' herein, but also can cross a Q ', will be than the regulation place in the downstream, line scanning direction of more close some P ' of a Q ' as terminal point.By the second such line irradiation process step S203b, with execution mode 3 similarly, can by the expectation width W and the expectation the position, form not welding portion 15 accurately.
After forming not welding portion 15 as described above, as shown in figure 24, with the situation of execution mode 3 similarly, the mode of describing on the track with the electron beam 10A that in the second line irradiation process step S203b (with reference to Figure 10), forms, scanning beam 10C.Thus, carry out annealing in process (the annealing in process process S204 of Figure 10) by electron beam 10C.
In execution mode 3 as mentioned above, by this annealing in process, never welding portion 15, the gas that produces in the welding in an above-mentioned welding sequence step S203a (with reference to Figure 10) and be derived from gas attached to the volatile ingredient on the container 2 via the not welding portion 15 as opening is discharged to outside (the discharge process S205 of the gas of Figure 10) from the inside of packaging body 20.
Then, after the gas that has carried out the stipulated time is discharged,, make not sealing material 4 fusions of welding portion 15, thus sealed package 20 (being secondary welding) (the secondary welding process S206 of Figure 10) fully to welding portion 15 irradiating electron beam 10D not.In such secondary welding process S206, as shown in figure 25, never an end of welding portion 15 is promptly put R ' and is promptly put P ' towards the other end, to the scanning direction electron beam 10D identical with the line scanning direction of the first line irradiation process step S203a (with reference to Figure 10), carries out the line irradiation.In fact, because some P ' and some R ' De Ju From are about 0.5mm, so can replace electron beam 10D, employing laser carries out point-like and shines and weld.
In addition, in above-mentioned, illustrated that employing electron beam 10D carries out the situation of secondary welding process S206 (with reference to Figure 10), but the kind of line is not limited thereto, and also can utilize laser to weld.
In the present embodiment of above-mentioned formation, can access and the identical effect of effect described in the execution mode 3.In addition, in present embodiment and execution mode 3, on the quartz crystal this point that can realize having good characteristic and stable reliability, have identical effect, but about the airtight sealing in the zone beyond the welding portion 15 not, execution mode 3 can be realized better quality percentage.Never the airtight encapsulation this point beyond the welding portion 15 is considered, preferred four bights passing through a welding sequence sealing lid 3 continuously.
(execution mode 8)
Figure 26 represents the flow chart of each operation in the manufacture method of packaging body of embodiments of the present invention 8.As shown in figure 26, the packaging body manufacture method of present embodiment, in welding sequence step S303, forming by the irradiation of line not on the welding portion this point, promptly a welding sequence step S303 is on the operation this point, is that the execution mode 3 of two operations (step S203a and step S203b) is different with as shown in figure 10 a welding sequence step S203.
Promptly, in the manufacture method of the packaging body of present embodiment, as shown in figure 26, with the situation of execution mode 3 similarly, in the container 2 of Fig. 2, take in quartz crystal 1 (step S301) afterwards, in the step S102 of execution mode 1 (with reference to Fig. 1), utilize above-mentioned method to carry out the point solid (step S302) of lid 3 and container 2.Like this that 3 of lids is solid after on the container 2, then,, be initial point with the some P of Figure 11 from lid 3 side irradiating electron beam 10A, be terminal point with a R simultaneously, along the periphery of lid 3 to prescribed direction single pass electron beam 10A.Thus, between a P and some Q, form not welding portion 15 (a welding sequence step S303).
After an above-mentioned welding sequence step S303, with the annealing in process process S204 (with reference to Figure 10) of execution mode 3 similarly, irradiating electron beam 10C carries out annealing in process (annealing in process process S304) as shown in Figure 13.Afterwards, utilize the identical method of step S205 (with reference to Figure 10) with execution mode 3, never welding portion 15 (with reference to Figure 13) is discharged gas that produces among welding sequence step S303 and the gas (step S305) that is derived from the volatile ingredient that produces among the annealing in process process S304.In addition, with the step S206 of execution mode 3 similarly, as shown in figure 14,, weld not welding portion 15 to welding portion 15 irradiating electron beam 10D not, seal (secondary welding process S306) thus fully.In addition, also can replace electron beam 10D and adopt laser.
In the present embodiment of above-mentioned formation, with form not execution mode 3 grades of welding portion 15 by secondary line irradiation and compare, the formation precise decreasing of welding portion 15 not, thereby the width W of the not welding portion 15 of formation is compared increase with situations such as execution modes 3.But, in the present embodiment, by having adopted the annealing in process operation S304 of electron beam 10C, can remove the gas that produces among welding sequence S303 or annealing in process efficiently and the gas that produces, thereby can make that the packaging body 20 of Fig. 2 of manufacturing is inner to form high vacuum degree.Therefore, can access and the identical effect of effect described in the execution mode 1.
(execution mode 9)
In above-mentioned execution mode 3～8, as Figure 13,19,20, shown in 21, with annealing in process process S204 (with reference to Figure 10), electron beam 10C among the step S304 (with reference to Figure 26), 10C ', 10C " scanning position; be made as not welding portion 15 (with reference to Figure 12) and neighbouring beyond; at a welding sequence step S203 (with reference to Figure 10); any on electron beam 10A that forms among the step S303 (with reference to Figure 26) and the track of electron beam 10B; or the both sides that spread all over the track of the track of electron beam 10A and electron beam 10B are scanned; but in addition, for example, the line irradiation is carried out in (promptly once the part after the welding) zone in addition on also can the track to electron beam 10A and electron beam 10B.
For example, the manufacture method of the packaging body of embodiments of the present invention 9, in the annealing in process process S304 of the annealing in process process S204 of Figure 10 or Figure 26, utilization is in the method described in the execution mode 1, as Fig. 3 or shown in Figure 4, the diapire of container 2 or the regulation zone of sidewall are carried out the line irradiation.In the annealing in process at this moment,, adopt low electron beam or the laser of output valve in order to reduce damage to container 2 or lid 3.In the present embodiment of above-mentioned formation, also can access and the identical effect of effect described in the described execution mode 3～7.
Above-mentioned execution mode 1～9th, the illustration of packaging body manufacture method of the present invention, the present invention is not limited to execution mode 1～9.For example, in above-mentioned execution mode 3～9, as Figure 10 and shown in Figure 26, after having carried out welding sequence step S203, a step S303, carry out annealing in process process S204, step S304, but also can before welding sequence step S203, a step S303, carry out annealing in process process S204, step S304.In addition, for example, in execution mode 3～7, also can between the first line irradiation process step S203a and the second line irradiation process step S203b of the welding sequence step S203 of Figure 10, carry out annealing in process operation S204.
Herein, as implement mode 3～9, carrying out after Figure 10 and welding sequence step S203, a step S303 shown in Figure 26 form not welding portion 15, carry out under the situation of annealing in process process S204, step S304, can be by welding portion 15 not, discharge among welding sequence step S203,303 gas that produces from sealing material 4 etc. to the outside of packaging body 20 more efficiently.Therefore, can more effectively bring into play effect of the present invention.
In addition, in above-mentioned execution mode 3～7, when welding sequence step S203 shown in Figure 10, as shown in figure 11, in the first line irradiation process step S203a (with reference to Figure 10), after outer circumferential with the identical clockwise scanning direction electron beam 10A of lid 3, as shown in figure 12, in the second line irradiation process step S203b (with reference to Figure 10), to with clockwise opposite scanning direction electron beam 10B, but as long as the first line irradiation process step S203a is relative with the electron beam scanning direction of the second line irradiation process step S203b (with reference to Figure 10), then the electron beam scanning direction is not limited thereto.The electron beam scanning direction also will be considered allocation position with the openend of the relation of the installation of quartz crystal 1 or tuning-fork-type etc., suitably is set in quartz crystal 1 and can realizes good characteristic.In addition, the scanning direction of the electron beam 10D among the secondary welding process S206 (with reference to Figure 10) also is not limited to direction shown in Figure 14.
In addition, the formation position of welding portion 15 is not limited to the position in the above-mentioned execution mode 3～7, can be the position beyond these yet.The suitably settings such as discharge efficient of gas are not considered in the formation position of welding portion 15.
In addition, in above-mentioned execution mode 3～9, the line 10D of irradiation in secondary welding process S206 (with reference to Figure 10), that works as described is in electron beam and the laser any, but, for example in execution mode 3～7,9,, be fit to adopt the little laser of line spot diameter to seal (being dot encapsulation) not welding portion 15 owing to can reduce the not width W of welding portion 15 as described like that.
In addition, in above-mentioned execution mode 3～8, in the annealing in process process S304 of the annealing in process process S204 of Figure 10 and Figure 26, carry out once irradiating electron beam 10C, but also can be off and on reirradiation electron beam 10C repeatedly.For example, also can be off and on repeatedly after the irradiating electron beam 10C, from 2 seconds to 60 seconds, place packaging body 20, carry out the discharge (the discharge process S305 of the discharge process S205 of the gas of Figure 10 and the gas of Figure 26) of gas.
In addition, in above-mentioned execution mode 3～9, in the welding sequence step S303 of welding sequence step S203 of Figure 10 and Figure 26, at irradiating electron beam 10A, during 10B, also can describe the high electron beam 10A of described track ground once irradiating output valve, 10B, carry out the welding of lid 3 and container 2, perhaps, also can at first describe the low electron beam 10A of described track ground one or many irradiation output valve, 10B, with container 2, lid 3 and sealing material 4 are heated to set point of temperature, afterwards, and the high electron beam 10A of irradiation output valve, 10B, make 4 fusions of sealing material, carry out the welding of lid 3 and container 2.
In above-mentioned execution mode 1～9, illustrated that electronic component encapsulation body of the present invention (packaging body 20) is the situation of taking in the quartz crystal 1 of tuning-fork-type in container 2, but also can take in other quartz crystal.In addition, be not limited to quartz crystal 1,, also can use the present invention even take in the electronic component encapsulation body of formation of other electronic component.For example, the electronic component encapsulation body that piezoelectric vibrator, integrated circuit, SWA filter etc. are accommodated in the container also can be used the present invention.In addition, for electronic component encapsulation body, also can use manufacture method of the present invention with square shape shape in addition.
Embodiment
In an embodiment, utilize the manufacture method shown in the above-mentioned execution mode 3 to make the quartz crystal packaging body 20 of Fig. 2.In addition, in comparative example, utilize Figure 29 and manufacture method shown in Figure 30, do not carry out having made the quartz crystal packaging body 20 of Fig. 2 based on the annealing in process of electron beam irradiation.In addition, to the quartz crystal packaging body 20 of embodiment and comparative example, the recruitment and the average CI value of curing the equivalent serial resistance CI value after (baking) have been measured.Below, details is described.
(embodiment)
In an embodiment, according to the method described in the execution mode 3, carry out Figure 11 and a welding sequence (the step S203 of Figure 10) shown in Figure 12, annealing in process operation (the step S204 of Figure 10) shown in Figure 13 and secondary welding operation (the step S206 of Figure 10) shown in Figure 14, made the quartz crystal packaging body 20 of Fig. 2.
(comparative example)
In comparative example, form not welding portion 55 ' according to method shown in Figure 29.Afterwards, according to method shown in Figure 30, seal not welding portion 55 ' and made quartz crystal packaging body 54.
In the vacuum bakeout stove, under air atmosphere, under 150 ℃, each quartz crystal packaging body 20 of making has as stated above been heated 12 hours.Then, the recruitment and the average CI value of the equivalent serial resistance CI value after curing have been measured.
Figure 27 is a measurement result of utilizing the equivalent serial resistance CI value after the curing of quartz crystal packaging body 20 of method manufacturing of embodiment and comparative example.
As shown in figure 27, the quartz crystal packaging body 20 that utilizes the method for the embodiment of manufacture method of the present invention to make is compared with the quartz crystal packaging body 20 of the method manufacturing that utilizes comparative example, and the increase of the CI value after curing is little, and in addition, on average the CI value is also little.Especially, in an embodiment, the increase of CI value is little, and average CI value is also little.
Because baking test is the thermal endurance of expression quartz crystal packaging body 20 and the test of reliability, so quartz crystal packaging body 20 of embodiment, compare with the quartz crystal packaging body 20 of comparative example, have good thermal endurance and reliability, this effect is remarkable in the quartz crystal packaging body 20 of embodiment.
As mentioned above, the manufacture method of electronic component encapsulation body of the present invention and the electronic component encapsulation body that utilizes this method to make, can be used for realizing inner high vacuum and the high electronic component encapsulation body of manufacturing efficient of keeping, especially be fit to the inner Devices Characteristics or the big electronic component encapsulation body of reliability effect of vacuum state, for example take in the manufacturing of the electronic component encapsulation body of quartz crystal etc. taking in.
Claims (22)
1. the manufacture method of an electronic component encapsulation body is characterized in that, comprises at least:
Have opening and,, disposing the operation of described lid via the sealing material that the lid that makes described container and the described opening that covers described container engages by the periphery of this opening with the described opening of the container in the resettlement section of taking in electronic element in inside;
To described container and described lid at least one the irradiation line the annealing in process operation; With
The described sealing material of fusion engages the operation of described container and described lid.
2. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,
In described annealing in process operation, described line is shone in a place or the many places of the diapire of described container.
3. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,
In described annealing in process operation, described line is shone in a place or the many places of a sidewall of described container.
4. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,
In described annealing in process operation, described line is shone in a place or the many places of a plurality of sidewalls of described container.
5. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,
In described annealing in process operation, repeatedly shine described line off and on.
6. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,
In described annealing in process operation, laser is shone as described line.
7. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,
Before described annealing in process operation, so that the state of the interconnecting part of the described resettlement section of the residual described container of small part and outside, the described sealing material of fusion engages described container and described lid,
After described annealing in process operation, seal described interconnecting part.
8. the manufacture method of electronic component encapsulation body according to claim 7 is characterized in that,
Also comprised before or after described annealing in process operation: described container has through hole in advance as described interconnecting part, to the through hole sealing material filling procedure of described through hole filling through hole sealing material,
To described through hole sealing material irradiation line, the described through hole sealing material filling by fusion seals described through hole.
9. the manufacture method of electronic component encapsulation body according to claim 8 is characterized in that,
Described through hole is set on the diapire of described container, and configuring external connection electrode on the described diapire of described container, in described annealing in process operation, to the described line of area illumination of the described diapire the configuring area of and described external connecting electrode regional except that the formation of described through hole.
10. the manufacture method of an electronic component encapsulation body is characterized in that, comprises at least:
Have opening and,, disposing the operation of described lid via the sealing material that the lid that makes described container and the described opening that covers described container engages by the periphery of this opening with the described opening of the container in the resettlement section of taking in electronic element in inside;
A welding sequence, it is at the described container that utilizes described sealing material to engage and the junction surface of described lid, the subregion of removing regulation is with external radiation exposure first line, the described sealing material in the zone of fusion except that this subregion, come described container of welded seal and described lid, and form the i.e. welding portion not of the described resettlement section of described container and outside interconnecting part in this subregion;
The annealing in process operation, it is for the unencapsulated described electronic component encapsulation body of the state of the described not welding portion that has kept forming by a described welding sequence, and at least one of described container and described lid shone second line; With
The secondary welding operation, it shines described the 3rd line through after being used for discharging the stipulated time of the gas in the described container from described not welding portion to described not welding portion, comes the described not welding portion of welded seal.
11. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,
Described annealing in process operation will be identical with described first line that adopts in the described welding sequence line as described second line, in the mode of the irradiation of describing described first beam trace, shine a place or many places on the irradiation track of described first line in a described welding sequence.
12. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,
At least described first line and described second line are electron beam or laser.
13. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,
The output valve of described second line that adopts in the described annealing in process operation is lower than the output valve of described first line that adopts in the described welding sequence.
14. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,
In a described welding sequence, divide the irradiation of carrying out described first line more than the secondary, between the initial point and the initial point in the line irradiation for the second time in the line irradiation first time, be two ends with this two initial point, form described not welding portion.
15. the manufacture method of electronic component encapsulation body according to claim 14 is characterized in that, a described welding sequence comprises:
Line irradiation process for the first time, first with the end that becomes described not welding portion is initial point, described first line of outer circumferential prescribed direction sequential scanning along described lid, to be positioned at than second of the other end that becomes described not welding portion thirdly is terminal point by line scanning direction upstream side more, shine described first line, be sealed to thirdly described from described first means of spot welds; With
Line irradiation process for the second time, described second with the other end that becomes described not welding portion is initial point, outer circumferentially direction sequential scanning described first line relative along described lid with described prescribed direction, at least shine described first line to as described first time the line irradiation process terminal point thirdly, be sealed to thirdly describedly from described second means of spot welds, form described not welding portion.
16. the manufacture method of electronic component encapsulation body according to claim 15 is characterized in that,
Described container has square shape,
In a described welding sequence, with four bights of described container be contained in described first and described thirdly between or be contained in described and described mode between thirdly at second, set described first point, described and described thirdly position at second.
17. the manufacture method of electronic component encapsulation body according to claim 15 is characterized in that,
Before a described welding sequence, also comprise described lid point is fixed in operation on the described container,
In described first time of a described welding sequence and for the second time in the line irradiation process, the point that removes described lid and described container admittedly the area configurations partly as described first and described second point of the irradiation initial point of described first line.
18. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,
In described secondary welding operation, electron beam or laser are shone as described the 3rd line, to carry out described welded seal.
19. the manufacture method of electronic component encapsulation body according to claim 18 is characterized in that,
Utilize the described welded seal of the irradiation of described first line at least one operation of a described welding sequence or described secondary welding operation or described the 3rd line, comprising:
Preheating line irradiation process, it utilizes the irradiation of described first line or described the 3rd line as preheating procedure, and described container, described lid and described sealing material are heated to set point of temperature; With
Welding line irradiation process, the irradiation that it utilizes described first line or described the 3rd line makes the fusion of described sealing material, welds described container and described lid via described sealing material.
20. the manufacture method of electronic component encapsulation body according to claim 19 is characterized in that,
In described preheating line irradiation process, welding region is repeatedly shone described first line or described the 3rd line.
21. the manufacture method of an electronic component encapsulation body is characterized in that, comprises at least:
Have opening and,, disposing the operation of described lid via the sealing material that the lid that makes described container and the described opening that covers described container engages by the periphery of this opening with the described opening of the container in the resettlement section of taking in electronic element in inside;
The container top that the described sealing material of fusion engages described container and described lid engages operation;
The annealing in process operation, it is after described container top engages operation, at least one irradiating laser of described container and described lid;
Through hole sealing material filling procedure, it sealed material to the through hole filling through hole that is pre-formed on described container before or after described annealing in process operation; With
After described through hole sealing material filling procedure and described annealing in process operation,, come filling to seal the operation of described through hole by the described through hole sealing of fusion material to being filled in the described through hole sealing material irradiating laser in the described through hole.
22. an electronic component encapsulation body is characterized in that,
Be to make by the manufacture method of each described electronic component encapsulation body in the claim 1,10 or 21.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP102803/2004 | 2004-03-31 | ||
| JP2004102803 | 2004-03-31 | ||
| JP282817/2004 | 2004-09-28 |
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| Publication Number | Publication Date |
|---|---|
| CN1965405A true CN1965405A (en) | 2007-05-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200580010073 Pending CN1965405A (en) | 2004-03-31 | 2005-03-30 | Manufacturing method of electronic component seal and electronic component seal |
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| Country | Link |
|---|---|
| CN (1) | CN1965405A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324909A (en) * | 2011-07-05 | 2012-01-18 | 台晶(宁波)电子有限公司 | Glass packaging tuning fork type quartz crystal resonator and manufacturing method thereof |
| CN103973251A (en) * | 2010-12-02 | 2014-08-06 | 精工爱普生株式会社 | Piezoelectric Resonating Device, Manufacturing Method Thereof, Piezoelectric Resonator, And Piezoelectric Oscillator |
| CN112894140A (en) * | 2019-12-04 | 2021-06-04 | 大族激光科技产业集团股份有限公司 | Vacuum laser welding method and device |
-
2005
- 2005-03-30 CN CN 200580010073 patent/CN1965405A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103973251A (en) * | 2010-12-02 | 2014-08-06 | 精工爱普生株式会社 | Piezoelectric Resonating Device, Manufacturing Method Thereof, Piezoelectric Resonator, And Piezoelectric Oscillator |
| CN102324909A (en) * | 2011-07-05 | 2012-01-18 | 台晶(宁波)电子有限公司 | Glass packaging tuning fork type quartz crystal resonator and manufacturing method thereof |
| CN112894140A (en) * | 2019-12-04 | 2021-06-04 | 大族激光科技产业集团股份有限公司 | Vacuum laser welding method and device |
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