CN1963844A - Self-offset high efficiency rectification circuit used for RF electron tag - Google Patents
Self-offset high efficiency rectification circuit used for RF electron tag Download PDFInfo
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- CN1963844A CN1963844A CN 200610118905 CN200610118905A CN1963844A CN 1963844 A CN1963844 A CN 1963844A CN 200610118905 CN200610118905 CN 200610118905 CN 200610118905 A CN200610118905 A CN 200610118905A CN 1963844 A CN1963844 A CN 1963844A
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Abstract
This invention can process automatic bias of MOS tube of integral current to lower integral current conductive voltage to improve radio frequency electron label integral current efficiency and to strengthen radio frequency electron label integral property.
Description
Technical field
The invention belongs to the integrated circuit (IC) design field.Be specifically related to a kind of self-offset high efficiency rectification circuit that is used for radio electronic label.
Technical background
Along with the develop rapidly of microelectric technique, CMOS technology can be made the chip that is applied to microwave region, and radio circuit can be integrated on the chip of large scale digital circuit.Low-cost wireless system with the manufacturing of CMOS technology will open more broad application.Radio-frequency (RF) tag is exactly an extraordinary application of prospect.
When bar code was pushed out in 1973, its inventor once foretold: after 25 years, will have a kind of new technology to substitute bar code.Now, radio-frequency (RF) tag is gone in face of the people.It is not only the simple substitute of bar code, more can the comprehensive wireless communication, up-to-date information technology such as microelectronics, internet, all national products are carried out carrying out the whole process supervision management from producing, selling and uying even recycling, greatly improve the running efficiency of entire society.
The working frequency range of radio-frequency (RF) tag comprises 1: the low frequency tags frequency of operation is at 30kHz-300kHz, and typical frequency of operation has: 125kHz, 133kHz.2: the high-frequency label frequency of operation is at 3MHz-30MHz, and typical frequency of operation is 13.56MHz.3: ultrahigh frequency label frequency of operation is greater than 400MHz, and the exemplary operation frequency is 915MHz, 2.45GHz, 5.8GHz.
A complete radio frequency tag chip generally includes antenna (1), the outer matching network (2) of sheet, and rectification circuit (3), power supply generation module (4), reception transtation mission circuit (5), digital baseband and storage unit (6), as shown in Figure 1.In passive RF electronic tag commonly used now, entire chip does not have external power source to supply with, rectification circuit obtains DC voltage other modules (detection and clock circuit, digital baseband and storage unit) of chip is powered carrying out rectification from the radiofrequency signal of antenna end input.Figure 2 shows that traditional N (N is the natural number more than or equal to 1) level voltage doubling rectifing circuit, in traditional CMOS technology, rectifying device generally adopts the diode of MOS (metal-oxide semiconductor (MOS)) device drain-gate short circuit equivalence.But general MOS device threshold is higher, the about 0.7v of NMOS, and the about 0.9v of PMOS if adopt this rectifying device will make efficiency of rectification reduce, thereby makes label operating distance shortening farthest in the radio electronic label system of low-power consumption.
Summary of the invention
Thereby content of the present invention has been to propose a kind of the biasing automatically by the metal-oxide-semiconductor of giving rectification reduces the forward voltage of rectification, thereby improves the efficiency of rectification of radio electronic label rectification circuit, strengthens the overall performance of radio electronic label.
The present invention realizes by following measure, the automatic biasing N (N be the natural number greater than 1) that proposes grade of rectification circuit structure as shown in Figure 3, its composition comprises the rectification unit circuit structure that (7) can setover, (8) bias current generating circuit, (9) load capacitance, (10) input coupling capacitance.Wherein (7) the rectification unit circuit structure that can setover as schematically shown in Figure 4.M1 in Fig. 4, M2 are commutator tube, can be made of N type or P type metal-oxide-semiconductor, and MB1-MB3 is the voltage bias pipe, is commutator tube M1, and M2 provides stable Dc bias.Node among Fig. 3 1., 2., 3., 4. with figure four in corresponding.(8) bias current generating circuit among Fig. 2 can be any circuit that can produce bias current.
Increase the bias voltage generation unit with respect to traditional N level voltage doubling rectifing circuit structure, and rectification unit has been carried out the automatic current biasing, made the commutator tube grid voltage remain on the lightly conducting state, reduced conduction threshold, improved the efficiency of rectification of rectification circuit.
Description of drawings
Fig. 1 is the radio-frequency (RF) tag structural representation.
The N level voltage doubling rectifing circuit structure that Fig. 2 is traditional.
The N rank rectification circuit structure that Fig. 3 setovers automatically for band.
Fig. 4 is for setovering the rectification unit circuit structure.
Fig. 5 is the two-stage band rectification circuit of biasing automatically.
Embodiment
The invention is further illustrated by the following examples.
Embodiment: Figure 5 shows that the two-stage band rectification circuit synoptic diagram of biasing automatically, Cp1, Cp2 are radio frequency input coupling capacitance in Fig. 5, CL1, CL2 are storage capacitor, MN1, MN2 are the N type metal-oxide-semiconductor as rectification, MP1, MP2 are the P type metal-oxide-semiconductor as rectification, MB1-MB6 provides stable voltage bias for the commutator tube grid, and R1, MB7-MB11 form bias current generating circuit.By bias current generating circuit commutator tube MN1, MN2, MP1, MP2 are produced biasing, reduce its conduction threshold, thereby improve the radio frequency efficiency of rectification of whole rectification circuit.
Claims (4)
1. N level self-offset high efficiency rectification circuit that is used for radio electronic label, described method is characterised in that the rectification unit for rectification circuit provides bias current, make the gate bias of rectification MOS (metal-oxide semiconductor (MOS)) pipe at the lightly conducting state, thereby reduce the conduction threshold of rectification metal-oxide-semiconductor, improve the efficiency of rectification of rectification circuit.
2. in the rectification circuit shown in claim 1, the bias current of rectification unit is produced by current source, and current source is characterized as the circuit that can produce bias current.
3. the rectification metal-oxide-semiconductor is characterized as the N type in the rectification circuit shown in claim 1, P type MOS (metal-oxide semiconductor (MOS)) exhausts or enhancement transistor.
4. the N level self-offset high efficiency rectification circuit shown in claim 1, N is the natural number more than or equal to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101189054A CN100458840C (en) | 2006-11-30 | 2006-11-30 | Self-offset high efficiency rectification circuit used for RF electron tag |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101189054A CN100458840C (en) | 2006-11-30 | 2006-11-30 | Self-offset high efficiency rectification circuit used for RF electron tag |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1963844A true CN1963844A (en) | 2007-05-16 |
| CN100458840C CN100458840C (en) | 2009-02-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006101189054A Expired - Fee Related CN100458840C (en) | 2006-11-30 | 2006-11-30 | Self-offset high efficiency rectification circuit used for RF electron tag |
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| CN (1) | CN100458840C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102063638A (en) * | 2011-02-17 | 2011-05-18 | 上海龙晶微电子有限公司 | Rectification circuit for radio frequency electronic tags |
| CN101753025B (en) * | 2008-12-17 | 2011-11-02 | 上海华虹Nec电子有限公司 | RF recognition rectifier circuit |
| CN103138568A (en) * | 2011-12-01 | 2013-06-05 | 国民技术股份有限公司 | Rectifying circuit and radio frequency identification (RFID) chip |
| CN103956920A (en) * | 2014-04-21 | 2014-07-30 | 复旦大学 | Static threshold eliminating and dynamic threshold eliminating combined type voltage-doubler rectifier |
| CN104113224A (en) * | 2013-12-19 | 2014-10-22 | 西安电子科技大学 | Radio frequency energy acquisition circuit system |
| CN104201915A (en) * | 2014-09-15 | 2014-12-10 | 西安电子科技大学 | Wide-input range, efficient and voltage-multiplying AC/DC (alternating current/direct current) rectifying circuit applied to piezoelectric energy gaining |
| CN104796017A (en) * | 2015-04-22 | 2015-07-22 | 西安电子科技大学 | Frequency-adaptive radio frequency energy rectifier |
| WO2023083032A1 (en) * | 2021-11-12 | 2023-05-19 | 华为技术有限公司 | Rectifier circuit, apparatus and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533988A (en) * | 1981-04-09 | 1985-08-06 | Telectronics Pty. Ltd. | On-chip CMOS bridge circuit |
| JP3501541B2 (en) * | 1995-03-10 | 2004-03-02 | 新日本製鐵株式会社 | Full-wave rectifier circuit |
| CN100449648C (en) * | 2003-12-24 | 2009-01-07 | 上海贝岭股份有限公司 | Low working voltage driven charge pump circuit |
-
2006
- 2006-11-30 CN CNB2006101189054A patent/CN100458840C/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101753025B (en) * | 2008-12-17 | 2011-11-02 | 上海华虹Nec电子有限公司 | RF recognition rectifier circuit |
| CN102063638B (en) * | 2011-02-17 | 2012-10-03 | 上海龙晶微电子有限公司 | Rectification circuit for radio frequency electronic tags |
| CN102063638A (en) * | 2011-02-17 | 2011-05-18 | 上海龙晶微电子有限公司 | Rectification circuit for radio frequency electronic tags |
| CN103138568B (en) * | 2011-12-01 | 2015-04-15 | 国民技术股份有限公司 | Rectifying circuit and radio frequency identification (RFID) chip |
| CN103138568A (en) * | 2011-12-01 | 2013-06-05 | 国民技术股份有限公司 | Rectifying circuit and radio frequency identification (RFID) chip |
| CN104113224B (en) * | 2013-12-19 | 2017-03-08 | 西安电子科技大学 | A kind of RF energy obtains Circuits System |
| CN104113224A (en) * | 2013-12-19 | 2014-10-22 | 西安电子科技大学 | Radio frequency energy acquisition circuit system |
| CN103956920B (en) * | 2014-04-21 | 2016-08-24 | 复旦大学 | Static threshold eliminates and eliminates, with dynamic threshold, the voltage-doubler rectifier combined |
| CN103956920A (en) * | 2014-04-21 | 2014-07-30 | 复旦大学 | Static threshold eliminating and dynamic threshold eliminating combined type voltage-doubler rectifier |
| CN104201915A (en) * | 2014-09-15 | 2014-12-10 | 西安电子科技大学 | Wide-input range, efficient and voltage-multiplying AC/DC (alternating current/direct current) rectifying circuit applied to piezoelectric energy gaining |
| CN104201915B (en) * | 2014-09-15 | 2017-03-22 | 西安电子科技大学 | Wide-input range, efficient and voltage-multiplying AC/DC (alternating current/direct current) rectifying circuit applied to piezoelectric energy gaining |
| CN104796017A (en) * | 2015-04-22 | 2015-07-22 | 西安电子科技大学 | Frequency-adaptive radio frequency energy rectifier |
| WO2023083032A1 (en) * | 2021-11-12 | 2023-05-19 | 华为技术有限公司 | Rectifier circuit, apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100458840C (en) | 2009-02-04 |
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Granted publication date: 20090204 Termination date: 20171130 |