CN1949607A - V type coupling cavity wavelength switchable semiconductor laser - Google Patents

Abstract

The invention discloses a V-type coupling cavity wavelength switchable semiconductor laser, comprising two optical resonant cavities, each comprising a segment of light waveguide and partial reflecting elements at the two ends; the two segments of light waveguides are arranged on a chip to form a V shape, there is no coupling at the opening end but there is a certain cross coupling at the closed end to make the laser have optimum single-mode selectivity; the first optical resonant cavity has a fixed optical length to make its resonant frequency be on a series of independent equidistant channels; the second optical resonant cavity has a certain length difference from the first one, and by changing effective refractivity of partial waveguides in the second optical resonant cavity, it can make the laser wavelengths mutually switched on a series of channels determined by the first optical resonant cavity. And the laser can further comprise one or two branch couplers or directional couplers added outside the cavity to improve coupling efficiency of external devices, and providing added modulating or space switching functions.

Description

The V-type coupled cavity wavelength switchable semiconductor laser

Technical field

The present invention relates to semiconductor laser, relate in particular to the changeable single mode semiconductor laser of a kind of single chip integrated wavelength.

Background technology

The laser of wideband adjustable all has a very wide range of applications at metropolitan area network with in growing apart from telecommunication.Except as replacing light source, can reduce stock's number and cost, can also be more effective, more the flexible net structure provides possibility for design.For example, the combination of tunable laser and lambda router can the implementation space optical switch and the Optical Add Drop Multiplexer function etc. of can recombinating.

Compare with the extenal cavity tunable laser device that constitutes with resolution element, single chip integrated semiconductor tunable laser has many advantages, and as compact conformation, cost is low, and owing to do not have movable part, thereby have higher reliability.Traditional monolithic integrated tunable semiconductor laser need come continuous tuning with a plurality of electrodes usually.Fig. 1 is a structural representation based on traditional semiconductor laser with tunable of distributed Blatt reflective grating, and it comprises 6, one phase-shifted regions 7 in an active gain district, and a Bragg grating 8.A control electrode is arranged respectively at three regional tops, when the reflection peak wavelength that changes Bragg grating by injection current or adjusting electrode voltage came the wavelength of tuned laser, phase-shifted region must and then be regulated the moding that prevents laser with certain relation simultaneously.And owing to be subjected to the restriction of tuning district material refractive index adjustable range, the adjustable range of this laser wavelength has only about 10nm usually.

V.Jarayman, Z.M.Chuang, and L.A.Coldren is at their article " Theory; design; and performance of extended tuning range semiconductor lasers with sampledgratings " IEEE J.Quantum Electron.Vol.29, pp.1824-1834 has described a kind of more complicated tuning structure in 1993, can realize wider tuning.It comprises four electrodes and controls two reflection Bragg gratings that distribute respectively, and phase-shifted region and gain region.The adjusting of wavelength need be regulated three electrodes simultaneously, and its electric current need satisfy accurate correlation, needs complicated control circuit.The complexity of Tiao Jieing greatly reduces the rate of finished products of manufacturing like this, has increased production cost, has also brought the property produced in batches of device and the problem of long-time stability simultaneously.

The switchable laser of wideband adjustable or wavelength can also be realized by the coupling between the different resonant cavity of two length.Its wavelength regulation scope can significantly increase by utilizing the Vernier effect.This coupling cavity laser can be realized by groove of etching in the fabry-Perot type laser of cleavage (specifically seeing " Monolithic two-section GaInAsP/InP active-optical-resonator devices formed byreactive-ion-etching ", by L.A.Coldren et al, Appl.Phys.Lett.vol.38, pp.315～317, detailed description in 1981), perhaps (specifically see " Thecleaved-coupled-cavity (C3) laser " by the structure of cleavage coupling cavity, by W.T.Tsang, Semiconductors and Semimetals, vol.22, p.257, the description in 1985) realize.Yet the above-mentioned characteristic of coupling cavity laser aspect model selection is difficult to satisfactory, and this has limited its application in practice greatly.

Before this, the coupling cavity of another kind of y-type structure also someone was studied, and saw article " The Y-laser:AMultifunctional Device for Optical Communication Systems and SwitchingNetworks " for details, O.Hildebrand, M.Schilling, D.Bums, W.Idler, K.Dotting, G.Lube, andK.Winsted, Journal of Light wave Technology, vol.11, no.2, pp.2066-2074,1993.Fig. 2 is the structural representation of this Y type coupling cavity, and it comprises straight wave guide section 1,3,4 and Y-type coupled waveguide section 2, and the insulation isolation channel with the light engraving erosion between each waveguide segment separates, and resonant cavity is formed by the cleaved facets at two ends.It is integrated that this Y type coupling cavity structure has easy monolithic, and do not need vertical deep erosion rectangular channel, the advantage that manufacture difficulty is little, still, its single mode is selected poor performance, and the gain for threshold value coefficient difference of main mould and one-level limit mould has only 1cm for 450 microns long lasers ^-1About, be 10cm with respect to the representative value of general distributed feed-back (DFB) laser ^-1More than.This is far from being enough for the single-mode laser that requires to have the steady operation pattern, especially when laser is directly modulated.

Summary of the invention

The present invention proposes a kind of structure of improving of V-type coupling cavity, it can easily optimize two coupling coefficients between the resonant cavity, thereby realizes good single mode selectivity characteristic, has a very wide wavelength tuning range simultaneously again.

Many practical applications do not need to regulate continuously the wavelength of laser, and only need laser on a series of discrete wavelength channels, to work, the ITU of International Telecommunications Union (InternationalTelecommunication Union) specified standard wavelength channel grid for example, can be applicable to standby ply-yarn drill, wavelength route and add drop multiplex etc.Key request to the Wavelength tunable laser in these application is: 1) operation wavelength can accurately be mated with a series of discrete predetermined wavelength; 2) control of wavelength switching is simple and reliable; 3) high side mode suppression ratio and low crosstalking to be arranged; 4) high wavelength switch speed; 5) manufacturing and with low cost easily.

Purpose of the present invention just provides a kind of switchable single mode semiconductor laser of monolithic integrated wavelength that can satisfy above-mentioned all requirements.

The objective of the invention is to be achieved through the following technical solutions:

A kind of semiconductor laser, comprise two optical resonators that intercouple, first optical resonator comprises first fiber waveguide and lays respectively at two partial reflection elements at its two ends, second optical resonator comprises second fiber waveguide and lays respectively at two partial reflection elements in addition at its two ends, has on each some at least in first and second fiber waveguide to be used for injection current the electrode of the basic loop gain that equates is provided for two optical resonators; First fiber waveguide has different optical lengths with second fiber waveguide, they also come V-shape of formation on the chip, two waveguides of openend at V-shape do not intercouple, and have a coupling coefficient less than 30% to make laser have high single mode selectivity at closing end.

Described first optical resonator has certain optical length so that the corresponding a series of equally spaced working channels of its resonant frequency; Described second optical resonator has different optical lengths so that it only has a resonant frequency to overlap with the resonant frequency of first resonator in the gain spectral range of laser material, thereby second fiber waveguide in described second optical resonator has a part at least with being used for applying the frequency of the laser instrument mutually switching on a series of discrete working channel that is determined by first optical resonator so that its effective refractive index changes of the electrode of curtage.

The part that described partial reflection element is a cleaved facets or constitute by a vertical deep erosion air groove that passes waveguide cross-section of limit wall.

At least one end of light resonant cavity outside that described first and second fiber waveguide are sent is coupled to output port by a Y type coupler, and the described Y type coupler while is as electroabsorption modulator, Q modulator or power monitor.

The output of light outside resonant cavity that described first and second fiber waveguide are sent is coupled to two delivery outlets by one 2 * 2 coupler, and the output that gets laser by the optical length official post of regulating first and second fiber waveguide is switched between two delivery outlets.

In described first and second fiber waveguide at least one receives an input optical signal by an optics input port, makes that the output light of laser is modulated according to input optical signal.

A kind of semiconductor laser, form by a Mach-Zhen De interferometer, this Mach-Zhen De interferometer comprises placed side by side, two ends are coupled and middle first and second waveguide arm that is not coupled, first and second waveguide arm are carved with the deep erosion groove of first and second partial reflection respectively in non-coupled zone in the centre, the deep erosion groove that the 3rd partial reflection is carved with in coupled zone at one end passes first and second waveguide arm simultaneously, between the deep erosion of first and the 3rd groove of first waveguide arm, form first optical resonator, between second of second waveguide arm and the 3rd deep erosion groove, form second optical resonator, have on each some fiber waveguide at least in first and second optical resonator and be used for injection current the electrode of the basic loop gain that equates is provided for two optical resonators; The position of the 3rd deep erosion groove makes certain cross-couplings is arranged to obtain good single mode selectivity between first optical resonator and second optical resonator.

Described first optical resonator has certain optical length so that the corresponding a series of equally spaced working channels of its resonant frequency; Described second optical resonator has different optical lengths so that it only has a resonant frequency to overlap with the resonant frequency of first optical resonator in the gain spectral range of laser material, thereby a part of fiber waveguide that has at least in described second optical resonator is used for applying curtage the frequency of laser instrument mutually switching on a series of discrete working channel that is determined by first optical resonator so that its effective refractive index changes with electrode.

The deep erosion groove of described partial reflection has the vertical edges wall and width is four fens odd-multiple to a wavelength.

Laser of the present invention has potential low cost, high-performance and multi-functional characteristics, in development reconfigurable optical-fiber network of future generation very big application prospect is arranged.Concrete beneficial effect comprises:

1, Y type coupling cavity laser relatively in the past can be realized higher side mode suppression ratio;

2, reach the side mode suppression ratio suitable with traditional Distributed Feedback Laser, simultaneously can be in a very wide scope wavelength switching.

3,, do not need to make complicated optical grating construction at process aspect.

4, can realize simultaneously that wavelength switches and the spatial optical switches function.

Description of drawings

Fig. 1 is a kind of semiconductor laser with tunable of background technology, and it comprises an active gain district 6, phase-shifted region 7, and Bragg reflection grating region 8.

Fig. 2 is the Y type coupled-cavity semiconductor lasers of background technology, comprises straight wave guide section 1,3,4 and Y-type coupled waveguide section 2, and the insulation isolation channel with the light engraving erosion between each waveguide segment separates, and resonant cavity is formed by the cleaved facets at two ends.

Fig. 3 is the vertical view of the integrated V-type coupled cavity wavelength switchable semiconductor laser of monolithic of the present invention.

Fig. 4 (a) is the sectional view of the V-type coupling cavity of Fig. 3 at end face 10 '.

The cross section structure schematic diagram of the light engraving erosion groove 15 that Fig. 4 (b) isolates for being used for insulating.

Fig. 5 selects the schematic diagram of the two cover resonance frequency position relations in chamber for showing fixed gain chamber and channel, and the gain spectra curve of working-laser material.

Fig. 6 be laser works under threshold condition, channel is selected the curve chart of the reflectivity modifying factor of chamber (dotted line) and fixed gain chamber (solid line) with wavelength change.

Fig. 7 be laser works near threshold value, channel is selected the small-signal transmission gain spectral of chamber (solid line) and fixed gain chamber (dotted line).

Fig. 8 is for when the cross-coupling coefficient of two resonant cavity waveguides is respectively 0.1 (solid line) and 0.5 (dotted line), and the reflectivity modifying factor is with the curve chart of wavelength change.

Fig. 9 is the gain for threshold value coefficient of each pattern of laser when cross-coupling coefficient is respectively 0.1 (circle) and 0.5 (spider).

Figure 10 (a) is the curve chart that the gain for threshold value coefficient of the resonant mode of threshold value minimum (solid line) and time low (dotted line) changes with the resonant cavity cross-coupling coefficient.

Figure 10 (b) is the curve chart that the gain for threshold value coefficient difference changes with the resonant cavity cross-coupling coefficient between minimum mould of threshold value and time low mould.

Figure 11 (a) is that the pumping condition in two resonant cavity waveguides is respectively under gL=g ' L ' and the g=g ' condition, and the gain for threshold value coefficient of minimum mould of threshold value (solid line and dotted line) and threshold value time low mould (dotted line and imaginary point line) is with the change curve of resonant cavity cross-coupling coefficient.Compare with Figure 10 (a), the long difference in the chamber of two resonant cavitys has increased one times.

Figure 11 (b) is that the pumping condition in two resonant cavity waveguides is respectively under gL=g ' L ' (solid line) and g=g ' (dotted line) condition, and the gain for threshold value coefficient difference of minimum mould of threshold value and threshold value time low mould is with the change curve of resonant cavity cross-coupling coefficient.Compare with Figure 10 (b), the long difference in the chamber of two resonant cavitys has increased one times.

Figure 12 is a structural representation of background technology Y type coupling cavity.

Figure 13 (a) is the change curve of the gain for threshold value of the minimum mould of threshold value (solid line) of Y type coupling cavity and inferior low mould (dotted line) with Y coupled zone coupling coefficient.

Figure 13 (b) is that the gain for threshold value coefficient difference of the minimum mould of threshold value and time low mould of Y type coupling cavity is with the change curve of Y coupled zone coupling coefficient.

Figure 14 (a) is the structural representation of a main execution mode of the present invention.

Figure 14 (b) is the cross sectional representation of Figure 14 (a) along waveguide 101 centers, and the structure of deep erosion groove 10 and 20 is described.

Figure 15 loses the reflectivity of rectangular channel and the transmissivity change curve with the etching well width when λ=1550nm deeply.

Figure 16 is the structural representation that has the execution mode of wavelength switching and space switching function simultaneously of the present invention.

Figure 17 is an another embodiment of the invention, and wherein two of non-coupled zone deep erosion grooves are placed on along on the diverse location of wave guide direction, pass waveguide arm separately respectively.

Figure 18 has the structural representation of the execution mode of wavelength shifter function for of the present invention another.

Embodiment

Below with reference to the accompanying drawings and embodiment, describe the present invention in detail.

Fig. 3 is the schematic diagram of first execution mode of the variable V-type coupling cavity of monolithic integrated wavelength of the present invention laser, it comprises two optical waveguide arms (being respectively the fiber waveguide 101 and 102 among the figure), is arranged side by side at the shape that constitutes a V-shape on the semiconductor chip.Two fiber waveguides at one end lean on very near (closed end), but the other end separate (openend) far away.Respectively there is a reflecting element at the two ends of each fiber waveguide, can be the deep erosion grooves (as Figure 14,10 and 20 in 16,17 and 18) of cleavage reflecting surface (being respectively end face 10 ' and end face 20 ' among Fig. 3) or rectangle.The reflecting element at each fiber waveguide and its two ends has constituted a fabry-perot resonant cavity.Because two waveguides are leaned on very closely or contacted, overlapped by evanescent wave coupling or pattern light field, a part of light will be coupled to another waveguide resonant cavity from a waveguide resonant cavity and go near end face 20 '.An electrode 121 is arranged at the top of fiber waveguide 101, and fiber waveguide 102 is divided into two sections 102a and 102b, and an electrode 122a and 122b are respectively arranged above, is separated by the light engraving erosion groove 15 of isolating that is used for insulating between two sections fiber waveguides.During laser works, inject constant electric current, produce the laser pumping gain, and the injection current of electrode 122b or voltage are variable, thereby the refractive index that is used for regulating fiber waveguide 102b section changes the operation wavelength of laser from electrode 121 and 122a.The fiber waveguide 102b fragment position of changeable refractive index is far away from the coupled zone, makes the change of its refractive index influence two coupling coefficients between the resonant cavity hardly.

Fig. 4 (a) is the sectional view of V-type resonant cavity in the vertical waveguide direction.Waveguiding structure generally includes 116, one of under-clad layers can provide optical gain when injection current waveguide core layer 114, and a top covering 112, and total is grown in the substrate 118, and the back side of substrate has a metal electrode layer 120 to be used for ground connection.What waveguide core layer generally adopted is the multi-layer quantum well structure, and the same quilt with the common lasers structure of these ducting layers suitably mixes, and material wherein is generally compound semiconductor materials, as InGaAsInP/InP.In lateral aspects, adopt the pattern of 101,102 pairs of light fields of fiber waveguide of ridge to limit.This structure can also comprise that a current isolating layer improves the electrology characteristic of laser.

Preferably fiber waveguide 101 and the 102a section than gain region is big to be used for the sandwich layer band gap of the fiber waveguide 102b section that wavelength switches, and ought apply curtage like this and make the refractive index of fiber waveguide 102b section cause that at the bigger scope Shi Buhui that changes the gain of resonant cavity produces significant the variation.To obtain different band gap in the different piece in the same block of material, can adopt the quantum well hybrid technology, or regrowth method after the etching.Electrode 122a and electrode 122b separate with a light engraving erosion groove 15, and the cross section structure of light engraving erosion groove 15 is shown in Fig. 4 (b).We also can be simplified to one whole section fiber waveguide that gain is provided to fiber waveguide 102a section and 102b section, make that by regulating electric current its refractive index is simultaneously variable.

According to an embodiment of the invention, the length of the fiber waveguide 101 in fixed gain chamber will be determined according to the operation wavelength of laser, make that the interval of resonance frequency in fixed gain chamber is consistent with the frequency interval that requires in advance, for example according to the regulation of ITU, each communication wavelengths be spaced apart 200GHz, 100GHz or 50GHz etc.The frequency interval of resonant cavity can be determined by following formula:

$\mathrm{\Δf}=\frac{c}{2n_{g}L}---\left(1\right)$

Wherein C is the light velocity in the vacuum, n _gBe effective group index of waveguide, L is the length of fixed gain chamber fiber waveguide 101.

Equally, the frequency interval Δ f ' of second resonant cavity that is made of fiber waveguide 102 (below be called channel select chamber) is determined by (2) formula:

${\mathrm{\Δf}}^{\′}=\frac{c}{2n_g^{\′}{L}^{\′}}=\frac{c}{2(n_a{L}_a+n_b{L}_b)}---\left(2\right)$

L wherein _aAnd L _bBe respectively the length of fiber waveguide 102a section and 102b section, same n _aAnd n _bBe respectively effective group index of fiber waveguide 102a and 102b section.L '=L _a+ L _bBe the total length of 102 sections of fiber waveguides, n ' _g=(n _aL _a+ n _bL _b)/L ' is the average effective group index that channel is selected the fiber waveguide 102 in chamber.

The frequency interval Δ f that channel selects the frequency interval Δ f ' in chamber to be chosen as with the fixed gain chamber has a small difference, and this makes that in the gain window of operation material both have only a resonance peak to overlap (as shown in Figure 5) just.The peak-to-peak Free Spectral Range (FSR) that is spaced apart the combination chamber of the resonance of the mutual coincidence that two resonant cavitys are adjacent, its size is determined by (3) formula:

${\mathrm{\Δf}}_c=\frac{\mathrm{\Δf\Δ}{f}^{\′}}{|\mathrm{\Δf}-\mathrm{\Δ}{f}^{\′}|}---\left(3\right)$

Be excited Δ f simultaneously for fear of two wavelength _cIn general must be greater than the width of laser works material gain window.

Fixed gain chamber and channel select the resonance frequency in chamber to be respectively:

$f=\frac{\mathrm{<figure-callout\; id="2"\; label="mc"\; filenames="A20061015458700261.png,A20061015458700291.png"\; state="\{\{state\}\}">mc</figure-callout>}}{2\mathrm{nL}}---\left(4a\right)$

$f^{\&prime;}=\frac{m^{\&prime;}c}{2n^{\&prime;}{L}^{\&prime;}}---\left(4b\right)$

Wherein m and m ' are integers, and n and n ' are respectively the average effective refractive index in two chambeies, and L and L ' are respectively the length in two chambeies.Channel selects the resonance frequency f ' in chamber can pass through to change the refractive index n of fiber waveguide 102b section _bThereby change the effective refractive index n ' in whole chamber and change.The frequency tuning amount is determined by following formula:

$\frac{\mathrm{\&delta;}{f}^{\&prime;}}{f^{\&prime;}}=-\frac{\mathrm{\&delta;}{n}^{\&prime;}}{n^{\&prime;}}=-\frac{\mathrm{\&delta;}{n}_b{L}_b}{n_b{L}^{\&prime;}}---\left(5\right)$

Because the operating frequency of laser is the frequency that the fixed gain chamber overlaps with channel selection chamber resonance peak, therefore less variation | Δ f-Δ f ' | will cause channel of laser works frequency hopping.Therefore, the change amount of laser works frequency has been exaggerated a factor f/| Δ f-Δ f ' |, that is:

$\mathrm{\&delta;f}=\frac{\mathrm{\&Delta;f}}{|\mathrm{\&Delta;f}-\mathrm{\&Delta;}{f}^{\&prime;}|}\mathrm{\&delta;}{f}^{\&prime;}---\left(6\right)$

One of advantage of the present invention is exactly the adjustable range that has significantly increased the laser works wavelength.Specifically can find out more significantly from an example: suppose Δ f=100GHz, Δ f '=90GHz, then the adjustable range of laser works frequency is regulated refractive index and is compared and enlarged 10 times with only depending on.Under above-mentioned data, effective group index of establishing waveguide is 3.215, and then fixed gain chamber and channel select the length in chamber to be respectively: L=466.24 μ m, and L '=518.31 μ m, its length and traditional DFB and fabry-Perot type laser are suitable.

An important difference of V-type coupling cavity of the present invention and in the past Y type coupling cavity is exactly that light wave is coupled to another resonant cavity from a resonant cavity and does not need to be introduced into one section common waveguide.Can see from behind, this can reach the ratio an of the best so that we can control from a resonant cavity light energy (cross-couplings) that is coupled to another resonant cavity and the light energy that turns back to former resonant cavity (coupling certainly), thereby makes the V-type coupling cavity can realize good single mode selectivity.

Return Fig. 3, the amplitude reflectance of establishing cleaved facets 10 ' among the figure and 20 ' is respectively r ₁, r ₂, the coupling of two waveguides occurs in end face 20 '.We turn back to 101 (coupling certainly), 102 are coupled to the amplitude coupling coefficient that 101 (cross-couplings), 102 turn back to 102 (couplings certainly) and are designated as C respectively be coupled to 102 (cross-couplings), 101 from fiber waveguide 101 ₁₂, C ₁₁, C ₂₁And C ₂₂Do simple being similar to, we do not have extra coupling loss at hypothesis.Therefore we have | C ₁₁| ²+ | C ₁₂| ²=1 and | C ₂₁| ²+ | C ₂₂| ²=1.From the reciprocity of light wave propagation, I am C as can be known ₁₂=C ₂₁Notice that above-mentioned coupling coefficient is not considered the reflectivity of end face, will separate consideration separately below the reflectivity of end face 20 '.

For the simplicity of analyzing is without loss of generality again simultaneously, we regard fiber waveguide 102 as one section uniform waveguide below, and its refractive index is n '=(n _aL _a+ n _bL _b)/L '.When analyzing V-type coupling cavity laser below, we regard one of them resonant cavity as main resonance cavity, and the coupling effect of it and another one resonant cavity is included in the reflectivity of coupling end face.At first, we regard the fixed gain chamber that comprises fiber waveguide 101 as main resonance cavity, and after coupling was taken into account, the amplitude effective reflectivity of reflection end face 20 ' can be write: r _2e=η r ₂, wherein η is the reflectivity modifying factor after the coupling effect of considering between fiber waveguide 102 and 101, it can be calculated by following formula:

η＝C ₁₁+C ₂₁C ₁₂r ₁r ₂e ^{2(g′+ik′)L′}(1+C ₂₂r ₁r ₂e ^{2(g′+ik′)L′}+C ² ₂₂r ₁ ²r ₂ ²e ^{4(g′+ik′)L′}+...)

$=C_{11}+\frac{C_{21}{C}_{12}{r}_1{r}_2{e}^{2(g^{\&prime;}+{\mathrm{ik}}^{\&prime;})L^{\&prime;}}}{1-C_{22}{r}_1{r}_2{e}^{2(g^{\&prime;}+{\mathrm{ik}}^{\&prime;})L^{\&prime;}}}---\left(7\right)$

Therefore the threshold value condition of work of laser can be written as:

r ₁ηr ₂e ^2(g+ik)L＝1................................(8)

In formula (8), k (=2 π n/ λ) and g are respectively the propagation constant and the gain coefficient of fiber waveguide 101, and (=2 π n '/λ) and g ' are respectively the average propagation constant and the Mean Effective Gain coefficient of fiber waveguide 102 to k '.

Equally, we also can select the channel that is made of fiber waveguide 102 chamber to regard main resonance cavity as.Consider and the coupling effect of fiber waveguide 101 that the effective reflectivity of end face 20 ' can be write: r _2e'=η ' r ₂, wherein η ' is the reflectivity modifying factor after the coupling effect of considering between fiber waveguide 101 and 102, can be calculated by following formula:

η′＝C ₂₂+C ₂₁C ₁₂r ₁r ₂e ^2(g+ik)L(1+C ₁₁r ₁r ₂e ^2(g+ik)L+C ² ₁₁r ₁ ²r ₂ ²e ^4(g+ik)L+...)

$={\mathrm{<figure-callout\; id="22"\; label="C"\; filenames="A20061015458700261.png"\; state="\{\{state\}\}">C</figure-callout>}}_{22}+\frac{C_{21}{C}_{12}{r}_1{r}_2{e}^{2(g+\mathrm{ik})L}}{1-C_{22}{r}_1{r}_2{e}^{2(g+\mathrm{ik})L}}---\left(9\right)$

The threshold condition of laser works can be written as equally:

r ₁η′r ₂e ^{2(g′+ik′)L′}＝1................................(10)

In (7) formula substitution (8), (9) are updated in (10), and the result can find that (8) formula and (10) formula are equivalences fully, can become following formula by equivalent-simplification, i.e. the threshold condition of V-type coupling cavity laser:

C ₁₁r ₁r ₂e ^2(g+ik)L+C ₂₂r ₁r ₂e ^{2(g′+ik′)L′}-(C ₁₁C ₂₂-C ₂₁C ₁₂)r ₁ ²r ₂ ²e ^2(g+ik)Le ^{2(g′+ik′)L′}＝1

......................................................(11)

Equation (11) can equate to change into two independently equations respectively according to both sides real part and imaginary part, can obtain the operation wavelength and the corresponding gain for threshold value coefficient of laser thus.Under non-coupling situation, i.e. C ₁₂=C ₂₁=0 and C ₁₁=C ₂₂=1, this moment η=η '=1, then equation (8), (10) and (11) all are simplified to the threshold condition of common fabry-Perot type laser.

We illustrate the characteristic of V-type coupling cavity laser again with concrete numerical example now.Consider above-mentioned structure, each parameter is as follows respectively: n=n '=3.215, L=466.24 μ m (Δ f=100GHz) and L '=518.31 μ m (Δ f '=90GHz).By (4a), (4b) formula can draw two resonant cavitys has common resonance peak at λ=1550.12nm, and corresponding resonance frequency is 193400GHz.If C ₁₁=C ₂₂=0.95, C ₁₂=C ₂₁The reflecting surface of=0.31, two resonant cavitys is made of cleavage surface, so have: r ₁=r ₂=(n-1)/(n+1)=0.5255.Select suitable pumping condition to make two chambeies that identical loop gain, i.e. gL=g ' L ' be arranged.Formant 1550.12nm place in two chambeies, the gain coefficient (intensity gain) that can be solved the minimum mould of threshold value by equation (11) is G=2g=22.6cm ^-1And G '=2g '=20.4cm ^-1As a comparison, the corresponding gain for threshold value of non-coupling cavity is respectively G ₀=27.6cm ^-1And G ₀'=24.8cm ^-1

The model selection characteristic of V-type coupling cavity and wavelength Conversion function can be found out from the reflectivity modifying factor η of coupling end face and the spectral characteristic of η '.η and η ' change along with wavelength change, and form resonance peak at specific a series of wavelength place.The laser work that is respectively shown in Figure 6 is when threshold value | η | ²(dotted line) and | η ' | ²(solid line) is with the curve (square expression is to the reflectivity modifying factor of light intensity, and η and η ' are the reflectivity modifying factors of amplitude) of wavelength change.The reflectivity modifying factor | η | ²Periodic resonance peak selects the peak value of resonance frequency in chamber (waveguide 102) consistent with channel.We can regard the reflectivity modifying factor equivalently as | η | ²Modulate the reflectivity of the end face 20 ' in fixed gain chamber, produced the reflection peak of a series of pectinations, be similar to the sampling DBR grating of prior art, but do not needed the complicated technology of making grating, and can not increase the length of device.Like this, with | η | ²The resonant mode in a fixed gain chamber overlapping of peak value will be selected as the mode of operation of laser.Because reflectivity modifying factor | η ' | ²The resonant mode in the corresponding fixed gain of periodicity resonance peak chamber, therefore, at | η | ²With | η ' | ²The position that peak value overlaps is the operation wavelength of laser.

Shown in Figure 7 is near the laser works threshold value, and signal is by the small signal gain spectrum of fiber waveguide 101 (dotted line) and fiber waveguide 102 (solid line).As can be seen from the figure, laser has a plurality of operation wavelengths to be excited, and by (3) Shi Kede, adjacent two wavelength intervals that are excited simultaneously are 7.2nm (900GHz).Aforementioned calculation is not considered the change in gain of operation material.In fact, because the limited gain spectra width of working-laser material, laser can be operated in the single mode pattern, in addition also can be at the inner optical thin film that increases a filter or plate one deck limiting bandwidth at end face of laser cavity.

The model selection characteristic of laser, i.e. side mode suppression ratio, the crosstalking of interchannel when influencing wavelength and switching is a significant consideration of design laser of the present invention.The model selection characteristic of laser can be optimized by selecting the cross-coupling coefficient between two suitable resonant cavitys.For the influence of coupling coefficient is described, we have calculated under the different coupling coefficients reflectivity modifying factor with the wavelength change function.Fig. 8 compared the intensity cross-coupling coefficient (promptly | C ₁₂| ²=| C ₂₁| ²) be 0.1 (solid line) and when being 0.5 (dotted line), the reflectivity modifying factor is with the wavelength change curve.Laser works is at threshold condition, i.e. G=22.6cm ^-1And G '=20.1cm ^-1We can see from figure, along with reducing of cross-coupling coefficient, and the reflectivity modifying factor | η | ²Resonance peak narrow down, but the simultaneous contrast also reduces.

Select the dislocation of the resonance peak in chamber to realize because the inhibition of opposite side mould is based on the resonance peak and the channel in fixed gain chamber, so the resonance peak of reflectivity modifying factor is narrow more, the model selection characteristic is good more, especially to adjacent mould.As quantitative analysis, the modeling characteristic of laser can be weighed by the threshold difference between main mould (mould that threshold value is minimum) and the limit mould (threshold value time low mould).Figure 9 shows that when cross-coupling coefficient between two chambeies is respectively 0.1 (curve among the figure shown in the circle) and 0.5 (curve shown in the cross hairs) the gain for threshold value value of each pattern.As can be seen from Figure, when cross-coupling coefficient was 0.1, the threshold value difference between minimum mould of threshold value and time low mould was about 7.4cm ^-1, but when cross-coupling coefficient when being 0.5, the threshold difference of two patterns only is 1.2cm ^-1And the gain of the mould correspondence that threshold value is minimum accordingly is respectively 22.6cm ^-1(coupling coefficient is 0.1) and 20.1cm ^-1(coupling coefficient is 0.5).

In Figure 10 (a), we have made the curve of the gain for threshold value of minimum mould of threshold value (solid line) and time low mould (dotted line) with the cross-coupling coefficient variation respectively.Figure 10 (b) has provided the threshold difference of these two patterns.As can be seen from the figure, be 0.5 o'clock at cross-coupling coefficient, main mould is that the gain for threshold value coefficient of the minimum mould of threshold value reaches minimum, but when cross-coupling coefficient is 0.1, has maximum gain for threshold value poor between main mould and the apotype.As can be seen from the figure, when cross-coupling coefficient is reduced to 0.1 from 1, the gain for threshold value difference between minimum mould of threshold value and time low mould increases gradually.This is because reduce the reflectivity modifying factor along with cross-coupling coefficient | η | ²The width of peak value reduces gradually, thereby causes better single mode selectivity.Along with further being reduced to below 0.1 of coupling coefficient, the gain for threshold value difference has reduced again on the contrary, and this is because of reflectivity modifying factor this moment | η | ²The width of resonance peak has been reduced to below the mode spacing, | η | ²The reducing of width just no longer had influence on the difference of gain for threshold value, and at this moment | η | ²Contrast along with the further decline that reduces of coupling coefficient, thereby cause gain for threshold value difference to reduce on the contrary.

Select the difference in length in chamber by increasing fixed gain chamber and channel, can increase the threshold difference between minimum mould of threshold value and time low mould, but can reduce Free Spectral Range Δ f simultaneously _c(FSR sees (3) formula).We find that equally when equating, minimum mould reaches maximum with the threshold value difference of time low mould when the loop gain in two resonant cavitys (being that light comes and goes a gain back and forth in resonant cavity).If the reflectance of reflector of two resonant cavitys equates, is gL=g ' L ' etc. loop gain, otherwise is r ₁r ₂e ^2gL=r ' ₁R ' ₂e ^{2g ' L '}For this point is described, we consider as L=466.24um (Δ f=100GHz), and (situation of Δ f '=81.7GHz), other parameters are identical with previous example for L '=570.38 μ m.Be respectively shown in Figure 11 (a) etc. loop gain (gL=g ' L ') and etc. under unit length gain (g=g ') pumping condition, the gain for threshold value of minimum mould (solid line and dotted line) and inferior low mould (dotted line and imaginary point line) is with the change curve of cross-coupling coefficient.Figure 11 (b) is under gL=g ' L ' (solid line) and g=g ' (dotted line) pumping condition, and the gain for threshold value difference of minimum mould and time low mould is with the change curve of cross-coupling coefficient.Compare with the result of calculation in the previous examples, the difference in length of two resonant cavitys has increased by one times, Free Spectral Range Δ f _cBe reduced to 446GHz by 900GHz.Maximum accessible gain for threshold value difference is by 7.4cm ^-1Be increased to 14.5cm ^-1(waiting under loop gain gL=g ' L ' condition), best cross-coupling coefficient (coupling coefficient when the gain for threshold value difference reaches maximum) is increased to 0.26 by 0.1 simultaneously.

Simultaneously, we can see also that from Figure 11 maximum accessible gain for threshold value difference reduces along with loop gains such as pumping condition departs from (gL=g ' L ') condition.Therefore, when the refractive index that changes channel selection chamber changes operation wavelength, should avoid the fluctuation of loop gain as far as possible.This can be by doing a regulatory region that separates (being made of fiber waveguide 102b and electrode 122b) and making passive it or alap gain and loss, as shown in Figure 3 in channel is selected the chamber.This can be so that the laser works wavelength when switching, influence power output and other characteristic of laser yet.

In addition, we also can consider fiber waveguide 101 also is divided into two sections, every section adds an independently control electrode, and wherein one section is used to provide fixed gain, and another section is used for regulating continuously the resonance frequency grid of " fixing " gain cavity in a channel spacing scope.This wavelength regulated continuously with the wavelength handoff functionality in aforementioned channels selection chamber combining, just can realize in a very wide wave-length coverage that the wavelength of laser regulates continuously.This continuous adjusting also can be used as fine setting, overlaps with the incomplete of trace that may exist between compensation fixed gain chamber resonance peak and the working channel grid.

We come the performance difference of V-type coupling cavity laser more of the present invention and former Y type coupling cavity laser more now.Y type coupling cavity as shown in figure 12 is by two Waveguide branching A, B, and one section public waveguide C forms, its length is respectively L _a, L _bAnd L _cElectrode in three sections waveguides by light engraving erosion groove 15 separately.The amplitude coupling coefficient that is coupled to A, B section from common segment C is designated as C respectively ₁, C ₂, from A, the amplitude coupling coefficient that the B section is coupled to common segment C is designated as C respectively ₁', C ₂'.By the invertibity of light wave propagation, can obtain C ₁=C ₁' and C ₂=C ₂'.If supposing does not have coupling loss, then have | C ₁| ²+ | C ₂| ²=1.

The same with preceding surface analysis V-type coupling cavity laser, the lock chamber that our first handle comprises waveguide A and waveguide C is as main resonance cavity, and then its threshold condition is:

${\mathrm{\&tau;\&tau;}}^{\&prime;}{r}_1{r}_2{e}^{2(g_a+{\mathrm{ik}}_a)L_a}{e}^{2(g_c+{\mathrm{ik}}_c)L_c}=1---\left(12\right)$

Wherein g and k are respectively gain coefficient and propagation constant, and subscript is represented corresponding waveguide segment.r ₁, r ₂Be respectively the amplitude reflectance of the light of two ends cleavage surface.τ '=C ₁' be amplitude transmission coefficient from waveguide A to waveguide C.And τ is from the effective amplitude transmission coefficient from C to A.Select the chamber can effectively consider that τ can be calculated by following formula among the transmission coefficient τ by the channel that waveguide B and waveguide C constitute to the coupling of main resonance cavity:

$\mathrm{\&tau;}={\mathrm{<figure-callout\; id="1"\; label="C"\; filenames="A20061015458700261.png,A20061015458700272.png"\; state="\{\{state\}\}">C</figure-callout>}}_1+C_1{C}_2{\mathrm{<figure-callout\; id="2"\; label="C"\; filenames="A20061015458700261.png,A20061015458700291.png"\; state="\{\{state\}\}">C</figure-callout>}}_2^{\&prime;}{r}_1{r}_2{e}^{2(g_b+{\mathrm{ik}}_b)L_b}{e}^{2(g_c+{\mathrm{ik}}_c)L_c}+C_1{\left(C_2{\mathrm{<figure-callout\; id="2"\; label="C"\; filenames="A20061015458700261.png,A20061015458700291.png"\; state="\{\{state\}\}">C</figure-callout>}}_2^{\&prime;}{r}_1{r}_2{e}^{2(g_b+{\mathrm{ik}}_b)L_b}{e}^{2(g_c+{\mathrm{ik}}_c)L_c}\right)}^2+...$

$=\frac{{\mathrm{<figure-callout\; id="1"\; label="C"\; filenames="A20061015458700261.png,A20061015458700272.png"\; state="\{\{state\}\}">C</figure-callout>}}_1}{1-C_2{\mathrm{<figure-callout\; id="2"\; label="C"\; filenames="A20061015458700261.png,A20061015458700291.png"\; state="\{\{state\}\}">C</figure-callout>}}_2^{\&prime;}{r}_1{r}_2{e}^{2(g_b+{\mathrm{ik}}_b)L_b}{e}^{2(g_c+{\mathrm{ik}}_c)L_c}}---\left(13\right)$

The expression formula of τ and τ ' is updated in the equation (12), and the threshold condition that can obtain Y type coupling cavity laser behind the abbreviation is:

C ₁C′ ₁r ₁r ₂e ^2(g+ik)L+C ₂C′ ₂r ₁r ₂e ^{2(g′+ik′)L′}＝1...............(14)

Wherein, L=L _a+ L _c, L '=L _b+ L _cIt is the total length that fixed gain chamber and channel are selected the chamber; And g=(g _aL _a+ g _cL _c)/L and g '=(g _bL _b+ g _cL _c)/L ' is two average gain coefficients in the chamber; K=(k in addition _aL _a+ k _cL _c)/L and k '=(k _bL _b+ k _cL _c)/L ' then is respectively the average propagation constant in two chambeies.

Adopt with top Figure 10 in the same parameter of v-shaped cavity, i.e. L=466.24 μ m, L '=518.31 μ m, and two chambeies are operated in and wait pumping to gain under (being gL=g ' L ') condition.Figure 13 (a) is depicted as the gain for threshold value (dotted line) of the gain for threshold value (solid line) of the minimum mould of Y type coupling cavity threshold value and inferior low mould with coupling coefficient | C ₂| ²Change curve.The threshold difference of minimum mould and time low mould is shown in Figure 13 (b).By seeing among the figure, the gain for threshold value of main mould (the minimum mould of threshold value) is G=2g=27.6cm ^-1, the variation with coupling coefficient does not change, and identical with non-coupling cavity with length.It has only 1.2cm with the threshold difference maximum of time low mould ^-1, occur in and work as coupling coefficient | C ₂| ²In the time of=0.5, promptly when the waveguide of Y type is a homenergic beam splitter.And shown in previous calculations, the accessibility main mould gain for threshold value of the V-type coupling cavity laser under the same parameter is 22.6cm ^-1, the gain for threshold value difference of main mould and apotype can reach 7.4cm ^-1(when coupling coefficient is 0.1).This shows that the V-type coupling cavity has better limit mould to suppress ability than Y type coupling cavity, and lower threshold value is arranged simultaneously.

Consider that from the threshold condition aspect Y type coupling cavity laser is equivalent to a special V-type coupling cavity, promptly one is satisfied C ₁₁C ₂₂-C ₁₂C ₂₁=0 V-type coupling cavity laser, its coupling coefficient is corresponding to C ₁₁=C ₁C ₁', C ₂₂=C ₂C ₂', C ₁₂=C ₁' C ₂And C ₂₁=C ₂' C ₁With we just can obtain equation (14) in these substitution equations (11).We can see in addition, and no matter how many beam split ratios of Y type coupler is, equation C ₁₁C ₂₂-C ₁₂C ₂₁=0 always sets up.This restriction has not just existed general V-type coupling cavity, so the V-type coupling cavity allows us to select more suitably coupling coefficient, thereby realizes bigger main mould and the threshold difference between the Bian Mo, reaches better single mode selectivity characteristic.

V-type coupling cavity shown in Fig. 3 can also be made mirror image by end face 20 ', obtains an X type structure, and similar characteristic is arranged; Can also make mirror image by opposing end surface 10 ' equally, and obtain diamond structure, similar characteristic is equally also arranged.

There is a shortcoming in structure shown in Figure 3, is to radiate from the waveguide of two branches in the two ends of laser light energy promptly, if the energy of radiation is coupled in the monomode fiber, this will seriously limit the utilance of luminous energy.This shortcoming can overcome by add an optical coupler outside the chamber, can also can adopt discrete device in single chip integrated mode.Figure 14 (a) is depicted as the structural representation of an embodiment of the invention.Cleaved facets 10 ' shown in Fig. 3 and 20 ' is replaced by the rectangular channel 10 and 20 of deep erosion respectively, as the partial reflection element of laser resonant cavity.The cross section of deep erosion groove is shown in Figure 14 (b), and it has vertical cell wall, and passes completely through ducting layer 114.Y type coupler 130 and 140 is coupled to a single mode waveguide at the laser two ends with the light energy in fiber waveguide 101 and the fiber waveguide 102 respectively.The output port of laser energy both can be chosen in the delivery outlet of Y type coupler 130 sides, also can be chosen in the delivery outlet of Y type coupler 140 sides, perhaps exported simultaneously from both sides.As shown in FIG., if select the delivery outlet of Y type coupler 130 as light, the output end face 30 of luminous energy must plate anti-reflection film, makes that seldom light energy is from end face 30 reflected back resonant cavitys.Y type coupler 130 need be by adding suitable pumping or making that by quantum well hybrid technology or etching regrowth method it is a substantially transparent to emergent light.At the other end of laser, Y type coupler 140 can reverse bias, as energy monitoring device on the sheet.In this case, the light that sees through rectangular channel 20 will be absorbed before arriving end face 40 substantially, did not therefore have light from end face 40 reflected back resonant cavitys.

The reflectivity of deep erosion groove can change along with the variation of groove width.Figure 15 is the reflectivity of deep erosion groove when wavelength is 1550nm and the transmissivity change curve with width.In order to make deep erosion groove as a high reflection mirror, the width of etching groove need be quarter-wave odd-multiple basically, promptly $\frac{1}{4}\mathrm{\&lambda;},\frac{3}{4}\mathrm{\&lambda;},\frac{5}{4}\mathrm{\&lambda;}...$ Deng, especially for back mirror (losing groove 20 deeply), higher reflectivity is arranged preferably generally.The reflectivity of etching groove is high more, and the work threshold value of laser is just low more, and it is poor not influence the gain for threshold value of V-type coupling cavity limit mould and main mould.

For the outer Y type coupler of laser resonant cavity, two sections Waveguide branchings preferably have identical brachium, or their optical length difference is the integral multiple of half-wavelength, make the laser master mould that radiates from fiber waveguide 101 and 102 light output face will have identical phase place from but the phase long coherence, even switching to one other channel from a channel, wavelength do not influence, so long as in same one-level Free Spectral Range by the decision of (3) formula yet.The condition of resonance equation (4) of laser makes the fiber waveguide 101 and the length difference of fiber waveguide 102 be necessary for the integral multiple of half-wavelength.In the coupled end (the deep erosion groove 20 among Figure 14) of laser, the phase place of light is identical in two sections waveguides.Can be by the biasing of regulating on the electrode 122b so that the optical length difference of two sections waveguides is the even-multiple of half-wavelength, when the resonance peak in two chambeies overlapped, the light that gives off from fiber waveguide 101 and 102 was in same-phase when arriving the output face of Y type coupler 130 like this.Meanwhile, at a distance of a free spectrum width Delta f _cThe resonance peak that overlaps of the next one, the optical length difference in two chambeies becomes the odd-multiple of half-wavelength automatically, thus phase place becomes on the contrary when the light that fiber waveguide 101 and 102 is given off arrives the output face of Y type coupler 130, thereby coherent subtraction.Therefore the interference effect between outer two arms of coupling cavity helps to filter or the contiguous unwanted oscillation mode of minimizing laser master mould.

For fear of the interference between modulation signal and the laser wavelength handover mechanism, laser of the present invention generally is more suitable for being operated under the continuous wave mode, comes modulation signal and need not directly modulate with the outer cavity modulation device.The outer cavity modulation device can adopt the mode of electroabsorption modulator (EAM), and directly monolithic is integrated on the same chip of laser.A concrete exemplary construction can be simultaneously as electroabsorption modulator (EAM) with Y type coupler shown in Figure 14 130.The waveguide material of EAM generally need have big slightly band gap width than the waveguide material of laser, make it possible to change in a big way by the electric absorption effect absorption coefficient of EAM.Equally, the material of different band gap can obtain by methods such as quantum well mixing, selective epitaxial or etching regrowths.

Wavelength chirp is the key property parameter of semiconductor laser under High Speed Modulation.Although with direct chopping phase ratio, the EAM outer cavity modulation has improved warbling of laser greatly, also can change by the modulation of the refractive index of EAM itself along with absorption coefficient, making still has certain existence of warbling.Simultaneously, EAM also brings certain additional insertion loss inevitably.The inventor is entitled as at one piece in the Chinese invention patent application (application number is 200610050484.6) of " Q semiconductor laser modulation ", described one electricity caused in the Fabry-Perot-type cavity that absorbing waveguides is placed on an antiresonance Q modulation technique as the back reflector of laser, so integrated Q modulation scheme also can be used in the V-type coupling cavity laser of the present invention.In this case, Y type coupler 140 is made of an electric absorption waveguide that can change absorption coefficient when reverse voltage biasing or electric current inject outside the chamber shown in Figure 14, loses groove 20 and cleaved facets 40 (or replaced by another deep erosion groove) deeply and has constituted a preferably Fabry-Perot-type cavity of antiresonance.The modulation of absorption coefficient will cause the modulation of laser back mirror reflectivity in the Y type coupler 140, and then the modulation Q factor and threshold value, thus the power output of modulated laser.So integrated Q modulated laser have warble little, the modulation rate height, the extinction ratio advantages of higher has simultaneously the high single mode selectivity and the wavelength handoff functionality of V-type coupling cavity laser again.

Figure 16 is the structural representation of another execution mode of V-type coupling cavity of the present invention.It is replaced Y type coupler outside the foregoing chamber by a directional coupler of 2 * 2 135 that has two output ports, by the optical length that changes fiber waveguide 101 and 102 poor (can regulate) by electrode 122b, make when the optical length difference between them (being about to a frequency interval Δ of the pectination spectrum shift f ' in channel selection chamber) when the even-multiple of half-wavelength is changed into the odd-multiple of half-wavelength, the light output of laser will switch to the another one port from a port, so this execution mode can be realized wavelength handoff functionality and spatial optical switches function simultaneously by regulating electrode 122b.Certainly, we also can increase an electrode on the Waveguide branching in resonant cavity or outside the chamber, control the function of spatial optical switches separately.In addition, directional coupler 135 also can be replaced by the multi-mode interference coupler (MMI) of dual-port or 2 * 2 optical couplers of other type.

In Figure 14 or execution mode shown in Figure 16, laser of the present invention can be regarded as an active Mach-Zhen De (Mach-Zehnder who is made of two sections fiber waveguide arms, or title MZ) interferometer, each of its two waveguide arms is all by the deep erosion groove cutting of two partial reflections, one of them deep erosion groove is in the non-coupled zone of waveguide arm, and another deep erosion groove in the coupled zone of two waveguides, thereby form two optical resonators of coupling mutually.Need in the position of the deep erosion groove of the coupled zone of two waveguides suitably to select to make to have a best cross-coupling coefficient between two resonant cavitys, thereby make laser that good single mode selectivity be arranged.Obviously, the deep erosion groove of non-coupled zone can be the deep erosion groove of two separation, and deep erosion groove 10 and 12 as shown in figure 17 can be placed on along on the diverse location of wave guide direction, passes waveguide arm separately respectively.In addition, outside the resonant cavity of fiber waveguide 101, increased an electrode 123, separately the switching of control output light between two output ports in Figure 17 kind.

Figure 18 is the another kind of execution mode of V-type coupling cavity laser of the present invention, can realize variable wavelength Conversion function.An input optical signal after 150 amplifications of amplifier on the sheet, enters a waveguide arm in the V-type coupling cavity.The amplifier input terminal face plates anti-reflection film, makes it not influence the resonant cavity of laser.Because nonlinear effect, the power output of laser will be subjected to the modulation of input optical signal.At output, wavelength Conversion output signal by the output of Y type coupler 140 back, its output end face 40 also plates anti-reflection film equally.The same with the wavelength handover mechanism of aforementioned embodiments, the wavelength of output signal can switch in a very wide scope.This execution mode can also have a photon detector 160 to integrate as power monitor.Because Y type coupler 140 equally also can be designed as electroabsorption modulator,, bring more flexibility for this device so this laser both can also can be modulated with input optical signal with electrical modulation.

V-type coupled cavity wavelength switchable laser of the present invention has many advantages.Compare with Y type coupling cavity laser, it can realize higher side mode suppression ratio, can be suitable with traditional Distributed Feedback Laser, simultaneously it can be in a very wide scope wavelength switching.At process aspect, it does not need to make complicated optical grating construction.Therefore laser of the present invention has potential low cost, high-performance and multi-functional characteristics, in development reconfigurable optical-fiber network of future generation very big application prospect is arranged.

Embodiments of the invention just are used for the present invention that explains, rather than limit the invention, and in the protection range of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.For example, the present invention also is applicable to circular resonant chamber or disc resonant cavity semiconductor laser.Two resonant cavitys are nestled up place or overlap, they are intercoupled, length in circular resonant chamber (the perhaps girth of disk) and Best Coupling coefficient can be determined according to the similar approach of above-mentioned V-type coupling cavity.

Claims (10)

1. semiconductor laser, it is characterized in that comprising two optical resonators that intercouple, first optical resonator comprises first fiber waveguide and lays respectively at two partial reflection elements at its two ends, second optical resonator comprises second fiber waveguide and lays respectively at two partial reflection elements in addition at its two ends, has on each some at least in first and second fiber waveguide to be used for injection current the electrode of the basic loop gain that equates is provided for two optical resonators; First fiber waveguide has different optical lengths with second fiber waveguide, they also come V-shape of formation on the chip, two waveguides of openend at V-shape do not intercouple, and have a coupling coefficient less than 30% to make laser have high single mode selectivity at closed end.

2. a kind of semiconductor laser according to claim 1, it is characterized in that described first optical resonator has certain optical length and makes its corresponding a series of equally spaced working channels of resonance frequency, described second optical resonator has different optical lengths makes it have only a resonance frequency to overlap with the resonance frequency of first resonant cavity in the gain spectral range of laser material, makes the frequency of laser switch mutually on a series of discrete working channel by first optical resonator decision thereby the electrode that second fiber waveguide in described second optical resonator has at least a part to have is used for applying curtage makes its effective refractive index change.

3. a kind of semiconductor laser according to claim 1 is characterized in that described partial reflection element is the part of cleaved facets.

4. a kind of semiconductor laser according to claim 1 is characterized in that described partial reflection element is to be made of a vertical deep erosion air groove that passes waveguide cross-section of limit wall.

5. a kind of semiconductor laser according to claim 1, it is characterized in that at least one end of light resonant cavity outside that described first and second fiber waveguide are sent is coupled to output port by a Y type coupler, the described Y type coupler while is as electroabsorption modulator, Q modulator or power monitor.

6. a kind of semiconductor laser according to claim 1, it is characterized in that the output of light outside resonant cavity that described first and second fiber waveguide are sent is coupled to two delivery outlets by one 2 * 2 coupler, the output that gets laser by the optical length official post of regulating first and second fiber waveguide is switched between two delivery outlets.

7. a kind of semiconductor laser according to claim 1, it is characterized in that in described first and second fiber waveguide at least one receives an input optical signal by an optics input port, makes that the output light of laser is modulated according to input optical signal.

8. semiconductor laser, form by a Mach-Zhen De interferometer, it is characterized in that this Mach-Zhen De interferometer comprises placed side by side, two ends are coupled and middle first and second waveguide arm that is not coupled, first and second waveguide arm are carved with the deep erosion groove of first and second partial reflection respectively in non-coupled zone in the centre, the deep erosion groove that the 3rd partial reflection is carved with in coupled zone at one end passes first and second waveguide arm simultaneously, between the deep erosion of first and the 3rd groove of first waveguide arm, form first optical resonator, between second of second waveguide arm and the 3rd deep erosion groove, form second optical resonator, have on each some fiber waveguide at least in first and second optical resonator and be used for injection current the electrode of the basic loop gain that equates is provided for two optical resonators; The position of the 3rd deep erosion groove makes certain cross-couplings is arranged to obtain good single mode selectivity between first optical resonator and second optical resonator.

9. a kind of semiconductor laser according to claim 8, it is characterized in that described first optical resonator has certain optical length and makes its corresponding a series of equally spaced working channels of resonance frequency, described second optical resonator has different optical lengths makes it have only a resonance frequency to overlap with the resonance frequency of first optical resonator in the gain spectral range of laser material, thereby has at least a part of fiber waveguide to have electrode to be used for applying curtage and to make its effective refractive index change to make the frequency of laser switch mutually on a series of discrete working channel by first optical resonator decision in described second optical resonator.

10. a kind of semiconductor laser according to claim 8, the deep erosion groove that it is characterized in that described partial reflection has the vertical edges wall and width is four fens odd-multiple to a wavelength.

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