CN1945743A - Erasing method for reducing erasing time and preventing over erasing - Google Patents
Erasing method for reducing erasing time and preventing over erasing Download PDFInfo
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Abstract
This invention relates to an erasing method for quick-flash storage unit arrays set in multiple sector regions, in which, each region has an erasing mark and the erasion mark of a region to be erased is set as the first value and the storage units with the marks set as the first values from the first to the last address in each sector region are verified orderly, when the verification is failed and times of verification for a same storage unit are smaller than a preset number, an erasure pulse is applied to said sector region to verify the same memory address, if the verification is failed and the verification times for a same unit reach to a preset number, then a residual region with the mark as the first value is verified, when all storage units in the regions to be erased are verified, the mark is set to be the second value, when the marks of all regions to be erased are set to be the second values, the erasure is stopped.
Description
Technical field
The present invention relates to non-volatility memorizer and have the device of non-volatility memorizer, more particularly, the present invention relates to the method for deleting of a kind of use in flash memory.
Background technology
Even often expectation be employed storage arrangement when the temporary interruption of power supply maybe when device is done the placement that does not apply electric power indefinite duration, still can keep information.Multiple semiconductor memory is so-called non-volatility memorizer with this feature growth promptly.The kind of widespread use is that (Electrically Erasable Programmable Read-Only Memory, EEPROM), information can be according to electrically storing and wiping in the storage unit of this EEPROM for Electrically Erasable Read Only Memory.
A kind of known eeprom memory device has the memory array of arranging with N * Metzler matrix on single-chip, wherein N is that columns and M are line number, this array is divided into some sectors, and each sector can selectedly respectively be wiped, and each sector is to form in the mode that a predetermined columns is assembled.As shown in Figure 1, and one 16 megabit (Megabit, flash memory 110 MB) is divided into 32 sectors, and each sector has the size of 64 kilobyte and can comprise the row of 256 bytes and the row of 256 bytes.
Each storage unit has a N type source region and N type drain region that is incorporated in the P type substrate.The grid of a suspension joint is separated by thin dielectric layer and substrate, and second dielectric layer then separated control gate and suspension joint grid, and in addition, a P type passage area in substrate has then been separated source electrode and drain region.In an EEPROM, storage unit is divided into a plurality of sectors, and wherein the source region of each cell transistor is connected to a same node point in each sector, and this node is called Vsc.Therefore, all storage unit in the sector 120 will be wiped free of simultaneously, and only carry out on the basis of sector in succession in the sector and wipe, and the transistorized control gate of this element is connected to word line, and its source electrode then is connected to bit line.
When low-voltage was applied to source region and high voltage and is applied to control gate and drain region, EEPROM can programme to the mode of suspension joint grid by heat of emission electronics.For instance, when the source region remained on earthing potential, source voltage was about+and 4 volts and control-grid voltage be about+and 9 volts.When erase operation, flash memory in one sector is by so-called Fu Le-Nuo Dehan (Fowler-Nordheim, F-N) method of tunneling effect is wiped free of successively, wherein, positive voltage (as+6 volts) is applied to the source region, negative voltage (as-9 volts) puts on control gate, reaches permission drain region suspension joint.Under this bias state, the highfield between 12 to 9MV/cm will produce between control gate and substrate, so be discharged to the source region at the negative charge of suspension joint grid accumulation by thin insulator.In read operation, this source region remains on earthing potential (0 volt) and control gate to have approximately+5 volts voltage, and this drain region is connected to the voltage between+1 to+2.Above-mentioned example is only in order to explain, the magnitude of voltage that also can adopt other with identical programming be provided, wipe, and read operation.
One known method for deleting is each storage unit of wiping the sector of desiring to wipe successively, if during a storage unit authentication failed, one erasing pulse will be applied in all sectors of desiring to wipe, and this storage unit will be verified once again, this program will be repeated until that this storage unit by checking, just verifies next storage unit then again, if a storage unit is very difficult to wipe, after repeatedly applying erasing pulse, normal storage unit then may be crossed and be wiped.
In order to prevent to wipe, the method that an improvement is as shown in Figure 2 wiped is that a sector erasing mark is used in each sector, in case successfully wipe and when verifying in the sector all storage unit (step 202), set wiping mark (step 204) and no longer wiping this sector of this sector.Therefore, can only not cross and wipe normal sector because of a storage unit that is difficult to wipe in another sector.Yet because erasing times lacks control, the checking of a storage unit that is difficult to wipe still expends the huge amount time, and crosses the consideration of wiping and do not eliminate fully.For instance, if storage unit uses 100 subpulses with by checking the time, suppose each proving period be about 200 how second and each erasing pulse cycle be about 10 milliseconds, then need spend about 21 seconds.
In order to reduce total erasing time, another improvement method shown in Figure 3 is that the address (step 302) of an Address Register in order to authentication failed in the record sector is set in each sector, and verify the storage unit (step 304) of each sector successively, if during a storage unit authentication failed, its address will be stored in the sevtor address buffer.So, applying erasing pulse (step 306) afterwards, do not needing to begin checking, can continue to verify the storage unit (step 308) of previous authentication failed on the contrary from first storage unit of sector.Yet the sevtor address buffer can take the chip space in the storage unit.For instance, in a 16M flash memory with 35 sectors, the occupied area of Address Register will occupy about 0.89 square millimeter in the 16M of 14 mm square chip.
Summary of the invention
A kind of method for deleting that is used in the array of the flash memory cell that is arranged on a plurality of sectors.Wherein each sector has one and wipes mark, and the mark of wiping of the sector of desiring to wipe then is set to first value, the sector to the end from first sector, and each first address, sector to the FA final address flag settings first value storage unit be verified successively.When authentication failed and same storage unit checking number of times during, apply erasing pulse sector and verify same storage address more so far less than predetermined number; When authentication failed and same storage unit checking number of times arrival predetermined number, verify that its mark is made as the residue sector of first value.When each storage unit in the sector of desiring to wipe by when checking, be second value with the flag settings of wiping of this sector, when the wiping mark and be made as second value of each sector of desiring to wipe, stop this erase operation.
Description of drawings
Fig. 1 is the structural drawing of non-volatility memorizer.
Fig. 2 wipes the process flow diagram of the method for deleting of mark for known use.
Fig. 3 is the process flow diagram of the method for deleting of another kind of known use sevtor address buffer.
Fig. 4 A, Fig. 4 B, Fig. 4 C are the process flow diagram according to the method for deleting shown in a preferred embodiment of the present invention.
Fig. 5 is the process flow diagram according to the method for deleting shown in another preferred embodiment of the present invention.The main element description of symbols
110: sector stored cell array
120:16 megabit memory cell array
WL0～WLn: word line
BL0～BLm: bit line
Vsc: node
202,204: the step of known method for deleting
302,304,306,308; The step of known method for deleting
410～474: each step of the method for deleting of a preferred embodiment of the present invention
510～524: each step of the method for deleting of another preferred embodiment of the present invention
Embodiment
In order to reduce total erasing time and to prevent to wipe non-volatility memorizer, a preferred embodiment can be crossed over a storage address that is difficult to be wiped free of, and continues checking residue sector, and then returns to handle this particular memory address.This non-volatility memorizer has the memory cell array that is arranged within a plurality of sectors, in each sector, the source region of each cell transistor is connected to a same node point, therefore, all storage unit within this sector will be wiped simultaneously, and this to wipe be to carry out on the sector connects basis with the sector.When the storage address authentication failed in the sector, apply an erasing pulse in this sector or the sector that all desire to wipe, after wiping several times, though still have the storage address that is difficult to be wiped free of not by this checking, storage unit can promptly be passed through this checking in other sector of desiring to wipe.Under this situation, preferred embodiment can be crossed over the memory unit address that is difficult to be wiped free of and be continued storage unit in other sector of checking, can verify ahead of time that therefore other sector wipes to reduce total erasing time and can prevent.
Each sector has wipes mark to indicate the situation of wiping of this sector, this wipe mark can be set at first value with the indication need wipe this sector, this wipes mark and can be set at second value and successfully wipe and verify this sector with indication, present address buffer is in order to indicating the address that is verified at present, and erasing times counter applies erasing pulse in order to indication and verifies the number of times of same address.When this same address be wiped free of continuously and behind the certain number of times of checking but still when failure then can cross over the storer that this is difficult to be wiped free of, and the present address buffer will be set as first address of next sector of desiring to wipe.In one embodiment, crossing over the number of times setting is about 10 to 50 times.
Fig. 4 A, Fig. 4 B, and Fig. 4 C show the flow process of a preferred embodiment, shown in Fig. 4 A, in step 410, the mark of wiping of the sector of desiring to wipe is made as first value, in step 412, the present address buffer then is set to first address of first sector of desiring to wipe.In step 414, the erasing times counter is made as zero, in step 420, checking be stored in the present address buffer the address, when beginning, first address of first sector that checking is desired to wipe.
Shown in Fig. 4 B, when step 422, during as if authentication failed, the value of erasing times counter and erasure error value are relatively.In step 424,, stop wiping program and transmitting a failure signal if the value of this erasing times counter arrives the erasure error value.When step 426, if the value of checking time counter is during less than the authentication error value; The erasing times counter again with wipe spanning value (for example 10 to 50) and compare, if the value of erasing times counter is when wiping spanning value, in step 428, apply an erasing pulse and wipe the sector that mark has first value in all, and the value of erasing times counter increases by 1, advances to step 420 then and verifies.In step 430, if the value of erasing times counter arrives when wiping spanning value, with this sector of decision whether be its wipe mark have first value last sector, if this sector is last sector, then go to step 428, if this sector is not that it wipes the last sector that mark has first value, in step 432, cross over the sector that this has the address that is difficult to wipe, and this present address buffer will be set to it and wipe first address that mark has the next sector of first value, just go to step 460 with quick checking then.
Get back to Fig. 4 A, in step 440, if this is when being proved to be successful, whether for this reason the present address buffer is used to comparison to determine this present address FA final address in the sector.In step 442, if present address is not the FA final address of this sector, the value of present address buffer will increase by 1, and go to step 420 with checking.When step 444, if present address is for this reason during the FA final address in the sector, the wiping mark and will be set to second value and successfully wipe and verify this sector of this sector to indicate.In step 446, determine whether this sector is that it wipes the last sector that mark has first value; Then in step 448, if this sector is not the last sector of desiring to wipe, the present address buffer will be set as first address of its next sector of desiring to wipe.In step 450, if this sector is the last sector of desiring to wipe, this mark that promptly means the sector that all desire to wipe will be set as second value, wipe program so finish this.
In the circulation of checking fast, if checking is attempted failing for the first time in the address in a sector, this sector will be crossed over.Shown in Fig. 4 C, in step 460, checking is stored in the address of present address buffer.In step 462, if authentication failed will determine then whether this sector is the last sector of desiring to wipe except crossing over the sector.In step 464, if this sector is not the last sector except crossing over the sector, the present address buffer will be set to first address of next sector of desiring to wipe, and go to step 460 with checking then; In step 466, if this sector is the last sector except crossing over the sector, the present address buffer will be set as first address of crossing over the sector.In step 468, the erasing times counter is made as zero, gets back to step 420 then with checking.
In step 470, if when in quick checking circulation, being proved to be successful, will this address of decision the FA final address of sector whether for this reason.In step 472,,, go to step 460 then with checking with the value increase by 1 of this address buffer if this address is not the FA final address of this sector; When step 474, if this address is the FA final address of sector for this reason, wiping mark and will being set as second value and successfully wiping and verify whole sector with indication of this sector goes to then whether step 462 is the last sector of desiring to wipe to determine this sector except crossing over the sector.
In order to prevent the problem of wiping, the method for deleting of another embodiment can apply the sector of erasing pulse in authentication failed, and periodically put on all sectors that it is labeled as first value, a possible mode is some number of times of every process, apply erasing pulse and wipe all sectors that mark has first value, and be not only to put on the sector of wiping failure in it.For instance, each applies erasing pulse At All Other Times and wipes all sectors that mark has first value in it, and is not only the sector that puts on authentication failed.
Fig. 5 is shown as the process flow diagram of an alternative program after the address validation failure, in step 510, if this authentication failed, the relatively value and the erasure error value of erasing times counter.Then when step 512,, stop wiping program, and transmit a failure signal if when the value of this erasing times counter arrives the erasure error value.When step 514, if the value of erasing times counter is during less than the erasure error value, the value of this erasing times counter again with wipe spanning value (for example 50) and compare, if the value of erasing times counter is when wiping spanning value, whether will be compared with decision for wiping one of all numbers in the value of this erasing times counter of step 516.In step 518, if the value of this erasing times counter when wiping one of all numbers, applies an erasing pulse and wipes all sectors that mark has first value in it.For instance,, apply erasing pulse and wipe all sectors that mark has first value,, go to step 420 checking again then the value increase by 1 of this erasing times counter in it if the value of erasing times counter is an even number; In step 520, if the value of erasing times counter is not when wiping one of all numbers, erasing pulse only puts on the sector of authentication failed.For instance, if the value of erasing times counter is an odd number, erasing pulse only puts on the sector by checking, and the value of erasing times counter is increased by 1, goes to step 420 with again checking then.
If the value of erasing times counter arrives when wiping spanning value, in step 522, determine whether this sector is that it wipes the last sector that mark has first value, if this sector is last sector, then go to step 520; If this sector is not it when wiping mark and being made as the last sector of first value, in step 524, leap has this sector that is difficult to wipe the address, and the present address buffer is made as it wipes first address that mark has next sector of first value, goes to step 460 with quick checking then.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limiting the present invention, and without departing from the spirit and scope of the invention, when can doing a little change and improvement, so the present invention's protection domain is as the criterion when looking the claim person of defining.
Claims (10)
1. the method for deleting of a Nonvolatile storage unit array is characterized in that above-mentioned these storage unit are arranged at a plurality of sectors, and each above-mentioned these sector has the mark of wiping, and this method comprises:
Setting desire to wipe the sector this wipe and be labeled as first value;
Wipe above-mentioned these storage unit in first sector to above-mentioned these sectors of checking, last sector that mark is made as this first value by this successively, wherein each above-mentioned these sector by first address validation to FA final address;
When authentication failed, apply an erasing pulse to this sector, and if the value of erasing times counter when wiping spanning value, is verified the same memory address again, if the value of this erasing times counter arrives when wiping spanning value, verify that this wipes the residue sector that mark has this first value;
When desiring to wipe each above-mentioned these storage unit in the sector all by when checking, this that set this sector wiped and is labeled as second value; And
When this of each above-mentioned these sector of desiring to wipe wiped flag settings for this second value, the termination erase operation.
2. method for deleting according to claim 1 is characterized in that also comprising:
Above-mentioned these storage unit of programming in advance in all above-mentioned these sectors of desiring to wipe are the logical zero level.
3. method for deleting according to claim 1 is characterized in that this scope of wiping spanning value is between 10 to 50.
4. method for deleting according to claim 1 is characterized in that stopping this erase operation when fail values is wiped in the value arrival of this erasing times counter.
5. method for deleting according to claim 4 is characterized in that this wipes fail values is 1000.
6. method for deleting according to claim 1 is characterized in that the step when authentication failed also comprises:
Apply this erasing pulse in this sector, and this wipes above-mentioned these sectors that mark is made as this first value periodically to put on all;
If when the value of this erasing times counter is wiped spanning value less than this, verify same this storage unit again; And
If the value of this erasing times counter arrives this when wiping spanning value, verify that this wipes the residue sector that mark has this first value.
7. method for deleting according to claim 6 is characterized in that the step when authentication failed also comprises:
Apply this erasing pulse in this sector, and this wipes flag settings above-mentioned these sectors for this first value to put on all At All Other Times at each;
If when the value of this erasing times counter is wiped spanning value less than this, verify same storage unit again; And
If the value of this erasing times counting time arrives this when wiping spanning value, verify that this wipes the residue sector that mark has this first value.
8. method for deleting according to claim 1 is characterized in that when authentication failed, if the value of this erasing times counter is not when wiping one of all values, only to apply this erasing pulse in this sector for a plurality of; If the value of this erasing times counter is above-mentioned these when wiping one of all values, applies this erasing pulse and wipe the residue sector that mark has this first value in this.
9. method for deleting according to claim 8 is characterized in that this wipes all values and one of comprise in odd number and the even number.
10. the method for deleting of a Nonvolatile storage unit array is characterized in that above-mentioned these storage unit are arranged at a plurality of sectors, and each above-mentioned these sector has the mark of wiping, and this method comprises:
(a) setting this that desire to wipe the sector wipes and is labeled as first value;
(b) set first address that the present address buffer is first sector of desiring to wipe;
(c) setting the erasing times counter is starting value;
(d) successively by the last sector of desiring to wipe, this first sector of desiring to wipe to institute verify above-mentioned these storage unit in above-mentioned these sectors, wherein each above-mentioned these sector is by this first address validation to a FA final address;
(e) when the value of authentication failed and this erasing times counter when wiping spanning value, apply an erasing pulse in this sector, and periodically put on all not above-mentioned these sectors by verifying, and the value of this erasing times counter is increased by 1, and verify present address again;
(f) when equaling this, the value of authentication failed, this erasing times counter wipes spanning value, and this sector is not when wiping mark and have this last sector of this first value for this, checking not the residue sector by checking, set this first value that this present address is next sector of desiring to wipe, and and to set this erasing times counter be zero;
(g) when this checking by and during this present address this FA final address that is not this sector, this present address is increased by 1;
(h) when this checking by and this present address when being this FA final address of this sector, set this sector this wipe and be labeled as second value and set this first address that this present address is the next sector of desiring to wipe; And
When (i) this that desire to wipe the sector when all wiped mark and all be made as this second value, stop erase operation.
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| CNB2005101082137A CN100464375C (en) | 2005-10-08 | 2005-10-08 | Erasing method for reducing erasing time and preventing over erasing |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102549551A (en) * | 2009-09-29 | 2012-07-04 | 飞思卡尔半导体公司 | Operating an emulated electrically erasable (EEE) memory |
| CN102930900A (en) * | 2011-08-10 | 2013-02-13 | 华邦电子股份有限公司 | Erase method of serial flash memory |
| CN104134459A (en) * | 2013-04-30 | 2014-11-05 | 飞思卡尔半导体公司 | Non-volatile memory (NVM) with variable verify operations |
| CN104217760A (en) * | 2014-08-26 | 2014-12-17 | 上海华虹宏力半导体制造有限公司 | Flash memory configuration method |
| CN105575427A (en) * | 2014-10-11 | 2016-05-11 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN105575430A (en) * | 2014-10-11 | 2016-05-11 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN106782651A (en) * | 2017-01-05 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | A kind of method for deleting of flash memory |
| US10261692B1 (en) | 2017-12-20 | 2019-04-16 | Winbond Electronics Corp. | Non-volatile memory and erase controlling method thereof |
| CN109960468A (en) * | 2019-01-29 | 2019-07-02 | 华中科技大学 | A kind of non-volatile memory cells method for deleting having authentication function and system |
| CN111061649A (en) * | 2019-10-28 | 2020-04-24 | 宁波三星智能电气有限公司 | Self-adaptive allocation method for storage space of memory |
| CN111240587A (en) * | 2019-12-30 | 2020-06-05 | 深圳市芯天下技术有限公司 | Erasing method and device of nonvolatile memory |
| CN113409863A (en) * | 2021-06-28 | 2021-09-17 | 芯天下技术股份有限公司 | Method and device for reducing erasing time, electronic equipment and storage medium |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5414664A (en) * | 1993-05-28 | 1995-05-09 | Macronix International Co., Ltd. | Flash EPROM with block erase flags for over-erase protection |
| JP3215237B2 (en) * | 1993-10-01 | 2001-10-02 | 富士通株式会社 | Storage device and method for writing / erasing storage device |
| JP3718578B2 (en) * | 1997-06-25 | 2005-11-24 | ソニー株式会社 | Memory management method and memory management device |
| JP3898305B2 (en) * | 1997-10-31 | 2007-03-28 | 富士通株式会社 | Semiconductor storage device, control device and control method for semiconductor storage device |
| JP3920501B2 (en) * | 1999-04-02 | 2007-05-30 | 株式会社東芝 | Nonvolatile semiconductor memory device and data erase control method thereof |
| US6901010B1 (en) * | 2002-04-08 | 2005-05-31 | Advanced Micro Devices, Inc. | Erase method for a dual bit memory cell |
| JP4188744B2 (en) * | 2003-04-08 | 2008-11-26 | 株式会社ルネサステクノロジ | Memory card |
-
2005
- 2005-10-08 CN CNB2005101082137A patent/CN100464375C/en active Active
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| CN102549551A (en) * | 2009-09-29 | 2012-07-04 | 飞思卡尔半导体公司 | Operating an emulated electrically erasable (EEE) memory |
| CN102930900A (en) * | 2011-08-10 | 2013-02-13 | 华邦电子股份有限公司 | Erase method of serial flash memory |
| CN102930900B (en) * | 2011-08-10 | 2016-03-16 | 华邦电子股份有限公司 | The erasing method of tandem flash memory |
| CN104134459B (en) * | 2013-04-30 | 2019-12-10 | 恩智浦美国有限公司 | non-volatile memory (NVM) with variable verify operation |
| CN104134459A (en) * | 2013-04-30 | 2014-11-05 | 飞思卡尔半导体公司 | Non-volatile memory (NVM) with variable verify operations |
| CN104217760A (en) * | 2014-08-26 | 2014-12-17 | 上海华虹宏力半导体制造有限公司 | Flash memory configuration method |
| CN105575430B (en) * | 2014-10-11 | 2020-02-07 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN105575430A (en) * | 2014-10-11 | 2016-05-11 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN105575427B (en) * | 2014-10-11 | 2020-02-04 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN105575427A (en) * | 2014-10-11 | 2016-05-11 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN106782651A (en) * | 2017-01-05 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | A kind of method for deleting of flash memory |
| US10261692B1 (en) | 2017-12-20 | 2019-04-16 | Winbond Electronics Corp. | Non-volatile memory and erase controlling method thereof |
| CN109960468A (en) * | 2019-01-29 | 2019-07-02 | 华中科技大学 | A kind of non-volatile memory cells method for deleting having authentication function and system |
| CN111061649A (en) * | 2019-10-28 | 2020-04-24 | 宁波三星智能电气有限公司 | Self-adaptive allocation method for storage space of memory |
| CN111061649B (en) * | 2019-10-28 | 2023-09-29 | 宁波三星智能电气有限公司 | Storage space self-adaptive allocation method of memory |
| CN111240587A (en) * | 2019-12-30 | 2020-06-05 | 深圳市芯天下技术有限公司 | Erasing method and device of nonvolatile memory |
| CN113409863A (en) * | 2021-06-28 | 2021-09-17 | 芯天下技术股份有限公司 | Method and device for reducing erasing time, electronic equipment and storage medium |
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| CN100464375C (en) | 2009-02-25 |
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