CN1914958A - Organic Electroluminescent Display Device - Google Patents
Organic Electroluminescent Display Device Download PDFInfo
- Publication number
- CN1914958A CN1914958A CN 200580004027 CN200580004027A CN1914958A CN 1914958 A CN1914958 A CN 1914958A CN 200580004027 CN200580004027 CN 200580004027 CN 200580004027 A CN200580004027 A CN 200580004027A CN 1914958 A CN1914958 A CN 1914958A
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- China
- Prior art keywords
- layer
- organic
- base
- inorganic compound
- phenanthroline
- Prior art date
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- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 119
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 119
- 239000000758 substrate Substances 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 57
- 238000004519 manufacturing process Methods 0.000 claims description 53
- 238000005401 electroluminescence Methods 0.000 claims description 36
- 238000001228 spectrum Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052700 potassium Inorganic materials 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 229910052790 beryllium Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
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- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 238000000295 emission spectrum Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 366
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- 239000000463 material Substances 0.000 description 82
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 42
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- 125000003118 aryl group Chemical group 0.000 description 30
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- 125000000217 alkyl group Chemical group 0.000 description 21
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 17
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 12
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- 239000010949 copper Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 8
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- 239000002253 acid Substances 0.000 description 7
- 125000004104 aryloxy group Chemical group 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 125000000623 heterocyclic group Chemical group 0.000 description 7
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- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 6
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 6
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 6
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
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- 239000011701 zinc Substances 0.000 description 6
- 241001597008 Nomeidae Species 0.000 description 5
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 150000004696 coordination complex Chemical group 0.000 description 5
- 125000004093 cyano group Chemical group *C#N 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 5
- 229910052701 rubidium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- MNCMBBIFTVWHIP-UHFFFAOYSA-N 1-anthracen-9-yl-2,2,2-trifluoroethanone Chemical group C1=CC=C2C(C(=O)C(F)(F)F)=C(C=CC=C3)C3=CC2=C1 MNCMBBIFTVWHIP-UHFFFAOYSA-N 0.000 description 4
- ZZLCFHIKESPLTH-UHFFFAOYSA-N 4-Methylbiphenyl Chemical group C1=CC(C)=CC=C1C1=CC=CC=C1 ZZLCFHIKESPLTH-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 125000002078 anthracen-1-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([*])=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 4
- 125000000748 anthracen-2-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([H])=C([*])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 4
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- OMFXVFTZEKFJBZ-HJTSIMOOSA-N corticosterone Chemical compound O=C1CC[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@H](CC4)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 OMFXVFTZEKFJBZ-HJTSIMOOSA-N 0.000 description 4
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- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 4
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- 125000001072 heteroaryl group Chemical group 0.000 description 4
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- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
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- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 125000005504 styryl group Chemical group 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910001428 transition metal ion Inorganic materials 0.000 description 4
- LLAPDLPYIYKTGQ-UHFFFAOYSA-N 1-aminoethyl Chemical group C[CH]N LLAPDLPYIYKTGQ-UHFFFAOYSA-N 0.000 description 3
- 125000006083 1-bromoethyl group Chemical group 0.000 description 3
- 125000001478 1-chloroethyl group Chemical group [H]C([H])([H])C([H])(Cl)* 0.000 description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
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Abstract
The invention provides an organic EL display device, it has base plate (11), and first organic EL component part (10) and second organic EL component part (20) set up on the same side of the base plate side by side; the first organic EL element section (10) is an element which comprises at least a light-reflecting conductive layer (12), an organic light-emitting medium layer (13), and a transparent electrode layer (15) in this order, and which has a light-reflecting layer (14) inside or outside the organic light-emitting medium layer (13) or the transparent electrode layer (15); the second organic EL element section (20) is an element which comprises at least a light-reflecting conductive layer (12), a first inorganic compound layer (21), an organic light-emitting medium layer (13), and a transparent electrode layer (15) in this order, and which has a light-reflecting layer (14) inside or outside the organic light-emitting medium layer (13) or the transparent electrode layer (15); the emission spectrum of light emitted from the first organic EL element section (10) is different from the emission spectrum of light emitted from the second organic EL element section (20).
Description
Technical field
The present invention relates to organic electroluminescence display device and method of manufacturing same.More particularly, the present invention relates to the organic electroluminescent device portion by will having formed resonator structure and being located on the same substrate and organic electroluminescence display device and method of manufacturing same that can be multicolor luminous with different optical distance.
Background technology
Panchromatic (full color) change technology as using organic electroluminescent (following represent " electroluminescence " with EL sometimes) comprises that three look branches are coated with method, and the method for combination colour filter is used in combination the method for EL, look conversion film and colour filter etc. in white EL.
Be coated with in the method at three look branches, can realize high efficiency by the balance of adjusting material and the loss that reduces circular polarizing disk.But this branch is coated with technology and has difficulties, so be difficult to realize high meticulous display, is difficult to carry out big pictureization.
With regard to regard to the method for using colour filter among the white EL, can enumerate the inefficient problem of white electroluminescence itself.
In addition,, be carried out various improvement, but can also have enumerated problems such as conversion efficiency to redness is low with regard to regard to the method for using the look conversion film in the electroluminescence.
As the mode of full-color display, be divided into bottom emission structure and top emission structure.Top emission structure is to instigate in the past from the structure of TFT glass substrate side-draw bright dipping to become not by substrate and the structure of taking out light from its opposition side.Like this, the numerical aperture that improves relative illuminating part becomes possibility, high brightness is changed into be possible.
So, studied at upper electrode and adopted translucent negative electrode, by multiple interference effect, only the light of specific wavelength is fetched into the outside of EL element, realize high colorrendering quality.For example, disclose in organic EL, when the spike length of the spectrum of the light that taken out is made as λ, satisfied following formula and the organic EL that constitutes with structure as described below,
(2L)/λ+Φ/(2π)＝m
(L is an optical distance, and λ is the light wavelength that desire is taken out, and m is an integer, and Φ is that form and aspect move, and optical distance L becomes positive minimum value and constitutes);
The formation of described organic EL is, stacked in order the 1st electrode that is made of light reflecting material, the organic layer that possesses organic luminous layer, translucent reflective layer and become resonant structure by the 2nd electrode and organic layer that transparent material constitutes.(for example with reference to patent documentation 1).
In addition, also disclose, each pixel of R, G, B the structure of clamping machine EL layer between reflector and the hyaline layer and the light output side of hyaline layer or outside light incident side dispose the display unit (for example, with reference to patent documentation 2) of colour filter.
Patent documentation 1: the international WO01/39554 trumpeter's volume that discloses
Patent documentation 2: the spy opens the 2002-373776 communique
But there are following problems in these EL element or display unit.
(1) in order to form panchromatic display unit, must make and corresponding EL element of all kinds, must make the thickness of EL element in each pixel is the thickness of corresponding color development, so the difficulty of manufacturing.
(2) owing to utilizing the little condition of m of above-mentioned formula, so there is the sorting property in time insufficient.
Summary of the invention
The invention that the present invention proposes just in view of the above problems, its purpose be, provides a kind of efficient that does not reduce organic EL and organic EL display that can be multicolor luminous and easy to manufacture.
The inventor etc. concentrate on studies in order to solve this problem, found that, by utilizing inorganic compound layer to adjust the blooming of the resonant structure of each organic EL, can make each element send the light (multicolor luminous) of different colours, described each organic EL is formed on the same substrate; Even and then the different organic EL (pixel) of color development, also organic light emitting medium layer, reflection layer, transparency electrode etc. can be formed as common same one deck, so need not form each layer at each element, can utilize easy manufacturing process to obtain high efficiency organic EL display, so that finished the present invention.
According to the present invention, can provide following organic EL display and manufacture method thereof.
1. organic electroluminescence display device and method of manufacturing same, it has substrate and on the same one side of aforesaid substrate and the first organic electroluminescent device portion that establishes and the second organic electroluminescent device portion, the above-mentioned first organic electroluminescent device portion comprises light reflective conductive layer, organic light emitting medium layer and transparent electrode layer in order at least, and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer; The luminescent spectrum of the light that sends from the above-mentioned first organic electroluminescent device portion is different with the luminescent spectrum of the light that sends from the above-mentioned second organic electroluminescent device portion.
2. organic electroluminescence display device and method of manufacturing same, it has substrate and on the same one side of aforesaid substrate and the first organic electroluminescent device portion that establishes and the second organic electroluminescent device portion, the above-mentioned first organic electroluminescent device portion comprises light reflective conductive layer, first inorganic compound layer, organic light emitting medium layer and transparent electrode layer in order at least, and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer; The above-mentioned second organic electroluminescent device portion comprises light reflective conductive layer, first inorganic compound layer, second inorganic compound layer, organic light emitting medium layer and transparent electrode layer in order at least, and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer; The luminescent spectrum of the light that sends from the above-mentioned first organic electroluminescent device portion is different with the luminescent spectrum of the light that sends from the above-mentioned second organic electroluminescent device portion.
3. organic electroluminescence display device and method of manufacturing same, it has substrate and on the same one side of aforesaid substrate and the first organic electroluminescent device portion that establishes, the second organic electroluminescent device portion and the 3rd organic electroluminescent device portion, the above-mentioned first organic electroluminescent device portion comprises light reflective conductive layer, organic light emitting medium layer and transparent electrode layer in order at least, and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer; The above-mentioned second organic electroluminescent device portion comprises light reflective conductive layer, first inorganic compound layer, organic light emitting medium layer and transparent electrode layer in order at least, and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer; Above-mentioned the 3rd organic electroluminescent device portion comprises light reflective conductive layer, first inorganic compound layer, second inorganic compound layer, organic light emitting medium layer and transparent electrode layer in order at least, and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer; The luminescent spectrum of the light that sends from above-mentioned first, second and the 3rd organic electroluminescent device portion differs from one another.
4. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～3 arbitrary record, the inorganic compound layer that one deck at least of above-mentioned first inorganic compound or second inorganic compound layer is handled by crystallization.
5. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～4 arbitrary record, above-mentioned first inorganic compound layer and/or second inorganic compound layer contain inorganic oxide.
6. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 4 records, above-mentioned first inorganic compound layer and second inorganic compound layer contain inorganic oxide,
The degree of crystallinity of above-mentioned first inorganic compound layer is bigger than the degree of crystallinity of above-mentioned second inorganic compound layer.
7. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 6 records, above-mentioned first inorganic compound layer is a crystalloid, and above-mentioned second inorganic compound layer is a noncrystalline.
8. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～7 arbitrary record, above-mentioned first inorganic compound layer and/or second inorganic compound layer contain the oxide of the element of selecting from the group that In, Sn, Zn, Ce, Sm, Pr, Nb, Tb, Cd, Ga, Al, Mo and W constitute.
9. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～7 arbitrary record, above-mentioned first inorganic compound layer and/or second inorganic compound layer contain the oxide of the element of selecting from the group of In, Sn and Zn formation.
10. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～9 arbitrary record, described smooth reflective conductive layer is the metal of selecting from the group that Al, Ag, Au, Pt, Cu, Mg, Cr, Mo, W, Ta, Nb, Li, Mn, Ca, Yb, Ti, Ir, Be, Hf, Eu, Sr, Ba, Cs, Na and K constitute or contains from the alloy of the metal more than at least a kind of this group selection.
11. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～10 arbitrary record, described reflection layer contains one or more the metallic element of selecting from the group that Al, Ag, Au, Pt, Cu, Mg, Cr, Mo, W, Ta, Nb, Li, Mn, Ca, Yb, Ti, Ir, Be, Hf, Eu, Sr, Ba, Cs, Na and K constitute.
12. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～11 arbitrary record, also have the look converter section.
13. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 1～12 arbitrary record, also have colour filter.
14. in the organic electroluminescence display device and method of manufacturing same of above-mentioned 12 records, described look converter section is a fluorescence transferring film.
15. the manufacture method of the organic electroluminescence display device and method of manufacturing same of arbitrary record in a kind 1～14 comprises the operation that forms above-mentioned first inorganic compound layer and/or second inorganic compound layer with wet etch method.
Organic EL display of the present invention by form the organic EL with different resonant structures on same substrate, can not reduce the luminous efficiency of organic EL, and realize multicolor luminous.
In addition, form inorganic compound layer by top in the light reflective conductive film, the blooming of control optical resonance portion, thus the thickness of the organic light emitting medium layer that is set to optimum value can not changed as light-emitting component, and freely adjust the blooming of each organic EL portion.
And then, need not adjust the thickness etc. of organic light emitting medium layer in each EL element portion that carries out different color developments, so can more easily make.
Description of drawings
Fig. 1 is the figure of expression as the organic EL display of first execution mode.
Fig. 2 is the figure of expression as the organic EL display of second execution mode.
Fig. 3 is the figure of expression as the organic EL display of the 3rd execution mode.
Fig. 4 is the figure of example of the formation position of expression reflection layer.
Fig. 5 is the figure of the manufacturing process of expression organic EL display.
Fig. 6 is the figure of the manufacturing process of expression organic EL display.
Fig. 7 is the figure of the manufacturing process of expression organic EL display.
Embodiment
[first execution mode]
Fig. 1 is the figure of expression as the organic EL display of first execution mode of the present invention.
The first organic EL portion 10 and the second organic EL portion 20 that organic EL display 1 has on substrate 11 and establishes.
The first organic EL portion 10 has the structure of stacked in order smooth reflective conductive layer 12, organic light emitting medium layer 13, reflection layer 14 and transparent electrode layer 15 on substrate 11.
The second organic EL portion 20 has the structure of stacked in order smooth reflective conductive layer 12, first inorganic compound layer 21, organic light emitting medium layer 13, reflection layer 14 and transparent electrode layer 15 on substrate 11.
Light reflective conductive layer 12 is to play a role as the electrode of supplying with hole or electronics to be reflected in the layer of the light of organic light emitting medium layer 13 generation simultaneously to light removing direction (top among Fig. 1).Organic light emitting medium 13 is the layers that contain organic luminous layer, utilize the compound generation light in electronics and hole.Reflection layer 14 is the layers that reflect and see through the light that produces at organic light emitting medium layer 13.Transparent electrode layer 15 is electrodes of supplying with hole or electronics, is in addition to see through the light that produces at organic light emitting medium 13, the layer that is fetched into the outside.
At first inorganic compound layer 21 that the second organic EL portion 20 forms, be to be used to adjust blooming so that make the layer of the light that sends the color different with the first organic EL portion 10.
In organic EL display 1, the first organic EL portion 10 and the second organic EL portion 20, have with between light reflective conductive layer 12 and the reflection layer 14 as the resonator structure of resonant structure.In having the element of resonator structure, light repeated reflection between two light reflection surfaces (light reflective conductive layer 12 and reflection layer 14) in organic light emitting medium 13 generations, near the light of wavelength that satisfies following formula is enhanced, its result, compare more with the light of other wavelength and to be emphasized, be released to the outside of element.
(2L)/λ+Φ/(2π)＝m
(L is an optical distance, and λ is the light wavelength that desire is taken out, and m is an integer, and Φ is the displacement at light reflective conductive layer 12, reflection layer 14.)
In addition, optical distance L is the refractive index n and actual distance L of the medium that passes through of light
RLong-pending (nL
R).
In the present embodiment, in the first organic EL portion 10, optical distance (blooming) is made as L1; In the second organic EL portion 20, be made as L2.In L1 and L2, only in the part suitable, optical distance difference with the thickness of first inorganic compound layer 21.
That is, in the first organic EL portion 10, can set the light of emphasizing certain wavelength X 1 and the outside that is fetched into element for, in the second organic EL portion 20, can set the light of emphasizing the wavelength X 2 different for, and be fetched into the outside of element with λ 1.Like this, the luminescent spectrum of the light that takes out from these 2 element portion is differed from one another, so the multicolor luminous possibility that becomes.
In addition, in the first organic EL portion 10 and the second organic EL portion 20, organic light emitting medium layer 13, reflection layer 14 and transparent electrode layer 15 can be used as general same film and form.So, can simplify manufacturing process, very favourable on industrial production.
[second execution mode]
Fig. 2 is the figure of expression as the organic EL display of second execution mode of the present invention.
The second organic EL portion 20 and the 3rd organic EL portion 30 that organic EL display 2 has on substrate 11 and establishes.
The second organic EL portion 20 is identical with above-mentioned first execution mode.
The 3rd organic EL portion 30 has the structure of stacked in order smooth reflective conductive layer 12, first inorganic compound layer 21, second inorganic compound layer 31, organic light emitting medium layer 13, reflection layer 14 and transparent electrode layer 15 on substrate 11.That is, the same with the second organic EL portion 20 except forming second inorganic compound layer 31, the function of each layer too.
Second inorganic compound layer 31 that forms in the 3rd organic EL portion 30 is to be used to adjust blooming so that make the layer of the light that sends the color different with the second organic EL portion 20.
In organic EL display 2, the second organic EL portion 20 and the 3rd organic EL portion 30 have with between light reflective conductive layer 12 and the reflection layer 14 as the resonator structure of resonant structure.In the second organic EL portion 20, optical distance (blooming) is made as L2, in the 3rd organic EL portion 30, be made as L3.In L2 and L3, only in the part suitable, optical distance difference with the thickness of second inorganic compound layer 31.
That is, in the second organic EL portion 20, can set for and emphasize certain wavelength X 2 and light is fetched into the outside of element, in the 3rd organic EL portion 30, can set the outside of emphasizing the wavelength X 3 different and light being fetched into element for λ 2.Like this, the luminescent spectrum of the light that takes out from these 2 element portion is differed from one another, so the multicolor luminous possibility that becomes.
In the present embodiment, can control the optical distance of the resonant structure of the second organic EL portion 20 and the 3rd organic EL portion 30 with the thickness of inorganic compound layer 21,31 rather than with the thickness of organic light emitting medium layer 13.So, can remain in the organic light emitting medium layer 13 optimum film thickness that the organic compound that uses plays a role efficiently, adjust the optical distance of resonant structure simultaneously.Thereby, can not reduce the luminous efficiency of organic EL, the organic EL display that making can be multicolor luminous.
In addition, in the present embodiment, on substrate 11 and establish the second organic EL portion 20 and 30 these two kinds of EL element portions of the 3rd organic EL portion and constitute, but be not limited thereto, for example also can be on substrate 11, form having ideals, morality, culture, and discipline machine EL element portion that three layers of inorganic compound layer are set and and be provided with the structure of three kinds of EL element portions.
[the 3rd execution mode]
Fig. 3 is the figure of expression as the organic EL display of the 3rd execution mode of the present invention.
10, the second organic EL portions 20 of the first organic EL portion and the 3rd organic EL portion 30 that organic EL display 3 has on substrate 11 and establishes.
The structure of each organic EL portion 10,20,30 is identical with above-mentioned first and second execution mode, and the function of each layer is also identical.
In organic EL display 3, each organic EL portion 10,20,30 has the different resonator structure of optical distance (blooming) respectively.That is, in the first organic EL portion 10, optical distance is made as L1, in the second organic EL portion 20, is made as L2, in the 3rd organic EL portion 30, be made as L3.
So, in each organic EL portion 10,20,30, emphasize the different light of wavelength (λ 1, λ 2, λ 3) respectively and light be fetched into the outside of element.Like this, the luminescent spectrum of the light that takes out from these 3 element portion is differed from one another, so the multicolor luminous possibility that becomes.Particularly in each element portion, the optical distance by setting resonant structure so that have nothing in common with each other trichromatic 1 luminous, can become can panchromatic demonstration organic EL display.
In addition, Fig. 1～each organic EL portion shown in Figure 3 is the top emission structure from transparency electrode 15 side-draw bright dippings, but also can be used as from the bottom emissive type of substrate 11 side-draw bright dippings.
In addition, between organic light emitting medium and transparent electrode layer, form reflection layer, but be not limited thereto, also can be the inside or outside formation of organic light emitting medium layer or transparent electrode layer.Fig. 4 represents the example of the formation position of reflection layer.
For example, shown in Fig. 4 (a), also can reflection layer 14 be set in the inside of organic light emitting medium (between organic light emitting medium 13a and the 13b).Like this, the light that produces from the organic light emitting medium 13a that is sandwiched in light reflective conductive layer 12 and reflection layer 14, acceptance is based on the adjustment of resonant structure, but, do not accept to emit to the outside based on the adjustment of resonant structure from the light that the organic light emitting medium 13b that is positioned at top (light taking-up side) from reflection layer 14 produces.
In addition, also can be as the inside (between organic light emitting medium 15a and the 15b) of Fig. 4 (b) transparency electrode that is shown in or as the outer setting reflection layer 14 of Fig. 4 (c) transparency electrode that is shown in.Like this, also can adjust the optical distance of resonant structure by the thickness of transparency electrode.
Then, the member of formation to organic EL display of the present invention describes.
(1) substrate
As substrate, be fit to use glass plate, polymer sheet etc.As glass plate, special preferred bases soda lime glass, the glass that contains barium/strontium, lead glass, aluminosilicate glass, pyrex, barium pyrex, quartz etc.As polymer sheet, can enumerate Merlon, acrylic acid, PETG, polyether sulfides, polysulfones etc.
(2) light reflective conductive layer
As the material that forms the light reflective conductive film, use to have light reflective and can bring into play materials with function as electrode.Light reflectivity is preferably more than 20%, more preferably more than 30%.
Particularly, the preferred metal of from the group that constitutes by Al, Ag, Au, Pt, Cu, Mg, Cr, Mo, W, Ta, Nb, Li, Mn, Ca, Yb, Ti, Ir, Be, Hf, Eu, Sr, Ba, Cs, Na and K, selecting or contain its alloy etc., preferred especially Pt, Au, Cr, W, Mo, Ta and Nb.
The thickness of light reflective conductive layer is according to the material that uses and difference, but preferred 100nm～1 μ m.If littler than 100nm, then light reflectivity reduces, and when using as electrode layer, resistance might uprise, if bigger than 1 μ m, forming film needs a lot of times, so not preferred.
(3) first and second inorganic compound layer
(light transmission rate under the 380nm～780nm) is more than 50% to inorganic compound layer, just can be not particularly limited to use so long as this wavelength of visible light zone.Preferably has the inorganic compound layer that light transmission rate is the transmitance more than 80%.
As inorganic compound, be preferably the inorganic compound of electric charge injection, conductivity or semiconduction.Particularly, can enumerate (a) conductivity free radical salt, (b) by as the acceptor composition of the electroconductive oxide that contains transition metal and the inorganic compound, (c) chalcogenide (chalcogenide), chalcogenide and the alkali metal that constitute as the donor composition of alkali metal and/or alkaline-earth metal.
As the organic free radical salt of (a) conductivity, can enumerate the salt of representing with following formula.
D
yA
z
[in the formula, D is the molecule or the atom of donor, and A is the molecule or the atom of acceptor, and y is 1～5 integer, and z is 1～5 integer.]
As D, alkali metal such as preferred Li, K, Na, Rb, Cs, alkaline-earth metal such as Ca, La, NH
4Deng.
As A, also preferred TaF
6, AsF
6, PF
6, ReO
4, ClO
4, BF
4, Au (CN)
2, Ni (CN)
4, CoCl
4, CoBr, I
3, I
2Br, IBr
2, AuI
2, AuBr
2, Cu
5I
6, CuCl
4, Cu (NCS)
2, FeCl
4, FeBr
4, MnCl
4, KHg (SCN)
4, Hg (SCN)
3, NH
4(SCN)
4Deng.
(b) by constituting, as its acceptor composition, preferably from Li as the acceptor composition of the electroconductive oxide that contains transition metal with as the donor composition of alkali metal and/or alkaline-earth metal
XTi
2O
4, Li
XV
2O
4, Er
XNbO
3, La
XTiO
3, Sr
XVO
3, Ca
XCrO
3, Sr
XCrO
3, A
XMoO
3, AV
2O
5At least a oxide of selecting in (A=K, Cs, Rb, Sr, Na, Li, Ca) (x=0.2～5).
In addition, as alkali metal, alkaline-earth metal, be fit to use the material identical with above-mentioned D.
(C) as chalcogenide, preferred ZnSe, ZnS, TaS, TaSe, ZnO etc.And then, also preferably constitute by chalcogenide and alkali metal.As preferred example, can enumerate LiZnSe, LiZnSi, LiZnO, LiInO etc.
In addition, also can preferably use inorganic oxide.For example, can enumerate the oxide of In, Sn, Zn, Ce, Sm, Pr, Nb, Tb, Cd, Ga, Al, Mo and W etc., be preferably the oxide that contains In, Sn, Zn.
In order easily to make display unit, be used for the material of light reflective conductive layer, first inorganic compound layer and second inorganic compound layer, preferably on its etching characteristic, difference is arranged.That is,, select easy etched material preferably according to the order of light reflective conductive layer, first inorganic compound layer, second inorganic compound layer.
For example, it is easier of the etched material of weak acid than light reflective conductive layer that first inorganic compound layer is selected, and it is easier of the etched material of weak acid than first inorganic compound layer that second inorganic compound layer is selected.
In addition, also can select to have the material of etching solution that can each layer of selective etch.
In order to make first inorganic compound layer and second inorganic compound layer have different etching characteristics, comprise the method that the degree of crystallinity of the inorganic oxide that forms two compound layers is adjusted.Degree of crystallinity is high more, and is difficult more based on the etching of acid.
In the present invention, the degree of crystallinity by making first inorganic compound layer can be provided with difference aspect the etching characteristic of two compound layers greater than the degree of crystallinity of second inorganic compound layer.
As the different example that utilizes etching characteristic, the following described example that utilizes wet etch method to carry out is arranged.
On glass substrate,, form the light reflective conductive layer with Cr sputter system film.Utilize this substrate of mixed liquor etching of cerous nitrate ammonium salt-aquae hydrogenii dioxidi (CAN), obtain having the substrate of light reflective conductive layer of the pattern of needs.
Then,, utilize oxalic acid aqueous solution to carry out etching, obtain having the substrate of amorphous (amorphism) ITO film of the pattern of needs ITO sputter system film.
By this substrate of 230 ℃ of following heat treated 30 minutes, can obtain having substrate as the crystallinity ITO film of first inorganic compound layer.By being crystallinity ITO film, can form not by the etched layer of oxalic acid aqueous solution.
And then, with IZO sputter system film, carry out etching thereon with oxalic acid aqueous solution, obtain having the substrate of second inorganic compound layer of the pattern of needs.In addition, as second inorganic compound layer, also can use amorphism ITO.
In addition, degree of crystallinity can utilize X-ray diffraction to measure.That is,, measure the angle (2 θ) and the intensity of diffracted ray, try to achieve degree of crystallinity from the integrated intensity ratio of diffraction peak to sample surfaces irradiation X ray.
Preferred first inorganic compound layer is a crystalloid, and second inorganic compound layer is a noncrystalline.Like this, can make second inorganic compound layer easier of the weak acid etching than first inorganic compound layer.
, can be enumerated to indium oxide-lead oxide (IZO), IZO and add lanthanide metal oxide and inorganic compound of obtaining etc. by the example of the etched inorganic compound of weak acid as the easiest.As the lanthanite series metal oxide, for example can enumerate cerium oxide, praseodymium oxide, neodymia, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosia, holimium oxide, erbium oxide, thulium oxide, ytterbium oxide and luteium oxide etc.
In addition, containing of lanthanide metal oxide is proportional, and all metallic atoms of the metal oxide in the preferred metal oxide layer relatively are 0.1～10 atom %.
In addition, in the presence of hydrogen etc., noncrystalline ITO that sputter indium oxide-tin oxide (ITO) obtains is also more suitable.
As can more being difficult to etched material by the weak acid etching and than above-mentioned inorganic compound, can enumerate indium oxide/cerium oxide compound, indium oxide-tungsten oxide compound, indium oxide-molybdenum oxide compound etc. than light reflective conductive layer is easier.The amorphism material of also preferred amorphism Compound I TO and above-claimed cpd.As mentioned above, the amorphism material of amorphism ITO and above-claimed cpd can be become the crystallinity compound by thermal annealing, so making second inorganic compound layer under the situation of system film on first inorganic compound layer, be particularly suitable for.
Making first inorganic compound layer is that ITO, second inorganic compound layer are IZO, becomes the damage of the layer of substrate in the time of can being reduced in etching, so preferred.
The thickness of first inorganic compound layer and second inorganic compound layer can suitably be adjusted the light generation resonance that becomes the wavelength that needs at the resonant structure of each EL element portion.Be preferably the scope of 5nm～1000nm.
(4) organic light emitting medium layer
The organic light emitting medium layer is individual layer or the duplexer that contains luminescent layer at least, and the structure shown in following is for example arranged.
(i) luminescent layer/hole injection layer
(ii) luminescent layer/hole transporting layer/hole injection layer
(iii) electron injecting layer/luminescent layer/hole injection layer
(iv) electron injecting layer/luminescent layer/hole transporting layer/hole injection layer
(v) electron injecting layer/electron supplying layer/luminescent layer/hole injection layer
(vi) electron injecting layer/electron supplying layer/luminescent layer/hole transporting layer/hole injection layer
(4-1) luminescent layer
As the method that forms luminescent layer, can use known method such as vapour deposition method, spin-coating method, LB method.In addition, disclosed as open clear 57-51781 communique the spy, adhesive such as resin and material compound are dissolved in solvent make after the solution, adopt spin-coating method etc. to make its filming, also can form luminescent layer.
In addition, luminescent layer also can form the different layer of a lot of color developments.For example, can be luminescent layer and Yellow Red luminescent layer by stacked blueness, obtain white luminous.In addition, in luminescent layer, can also use the layer that has mixed the luminescent material more than 2 kinds.In this case, can use individual layer, also can stackedly use.
The material that is used for luminescent layer can use material known as long-life luminescent material, uses fluorescent material and phosphorescent material usually.Aspect luminous efficiency, preferred phosphorescent below is that example describes with the fluorescent material.
As luminescent material, preferably the material shown in the formula (1) is used as luminescent material.
[changing 1]
(in the formula, Ar
1Be that the ring carbon atom number is 6～50 aromatic ring, X is a substituting group, and l is 1～5 integer, and m is 0～6 integer.)
As Ar
1Object lesson, can enumerate phenyl ring, naphthalene nucleus, anthracene nucleus, cyclohexyl biphenyl, Azulene ring, acenaphthene ring, fluorenes ring, phenanthrene ring, fluoranthene ring, the luxuriant and rich with fragrance alkene ring of vinegar, three adjacent inferior phenyl ring, pyrene ring, 1,2-benzophenanthrene (chrysene) ring, aphthacene Huan, Pi Huan, perylene ring, pentaphene ring, pentacene ring, tetraphenylene (tetraphenylene) ring, hexaphene ring, hexacene ring, rubicene ring, coronene (coronene) ring, trinaphthylene ring etc.
Wherein, preferred phenyl ring, naphthalene nucleus, anthracene nucleus, acenaphthene ring, fluorenes ring, phenanthrene ring, fluoranthene ring, 9,10-benzo phenanthrene ring, pyrene ring, 1,2-benzo phenanthrene ring, perylene ring, trinaphthylene ring etc.
Further preferred phenyl ring, naphthalene nucleus, anthracene nucleus, fluorenes ring, phenanthrene ring, fluoranthene ring, pyrene ring, 1,2-benzo phenanthrene ring, perylene ring etc.
Specifically, X is the aromatic series base of replacement or unsubstituted ring carbon atom several 6～50, replacement or unsubstituted annular atoms number are 5～50 aromatic heterocycle, replacement or unsubstituted carbon number are 1～50 alkyl, replacement or unsubstituted carbon number are 1～50 alkoxyl, replacement or unsubstituted carbon number are 1～50 aralkyl, replacement or unsubstituted annular atoms number are 5～50 aryloxy group, replacement or unsubstituted annular atoms number are 5～50 arylthio, replacement or unsubstituted carbon number are 1～50 carboxyl, replace or unsubstituted styryl, halogen radical, cyano group, nitro, hydroxyl etc.
As replacing or unsubstituted ring carbon atom number is the example of 6～50 aromatic series base, can enumerate phenyl, the 1-naphthyl, the 2-naphthyl, the 1-anthryl, the 2-anthryl, the 9-anthryl, the 1-phenanthryl, the 2-phenanthryl, the 3-phenanthryl, the 4-phenanthryl, the 9-phenanthryl, 1-aphthacene base, 2-aphthacene base, 9-aphthacene base, the 1-pyrenyl, the 2-pyrenyl, the 4-pyrenyl, the 2-xenyl, the 3-xenyl, the 4-xenyl, p-terphenyl-4-base, p-terphenyl-3-base, p-terphenyl-2-base, between terphenyl-4-base, between terphenyl-3-base, between terphenyl-2-base, o-tolyl, between tolyl, p-methylphenyl, to tert-butyl-phenyl, to (2-phenyl propyl) phenyl, 3-methyl-2-naphthyl, 4-methyl isophthalic acid-naphthyl, 4-methyl isophthalic acid-anthryl, 4 '-methyl biphenyl; 4 "-the tert-butyl group-para-terpheny-4-base, the 2-fluorenyl, 9,9-dimethyl-2-fluorenyl, 3-fluoranthene base etc.
Preferred phenyl, 1-naphthyl, 2-naphthyl, 9-phenanthryl, 1-aphthacene base, 2-aphthacene base, 9-aphthacene base, 1-pyrenyl, 2-pyrenyl, 4-pyrenyl, 2-xenyl, 3-xenyl, 4-xenyl, o-tolyl, a tolyl, p-methylphenyl, to tert-butyl-phenyl, 2-fluorenyl, 9,9-dimethyl-2-fluorenyl, 3-fluoranthene base etc.
As replacing or unsubstituted annular atoms number is the example of 5～50 aromatic heterocycle, can enumerate the 1-pyrrole radicals, the 2-pyrrole radicals, the 3-pyrrole radicals, pyrazinyl, the 2-pyridine radicals, the 3-pyridine radicals, the 4-pyridine radicals, the 1-indyl, the 2-indyl, the 3-indyl, the 4-indyl, the 5-indyl, the 6-indyl, the 7-indyl, the 1-isoindolyl, the 2-isoindolyl, the 3-isoindolyl, the 4-isoindolyl, the 5-isoindolyl, the 6-isoindolyl, the 7-isoindolyl, the 2-furyl, the 3-furyl, the 2-benzofuranyl, the 3-benzofuranyl, the 4-benzofuranyl, the 5-benzofuranyl, the 6-benzofuranyl, the 7-benzofuranyl, the 1-isobenzofuran-base, the 3-isobenzofuran-base, the 4-isobenzofuran-base, the 5-isobenzofuran-base, the 6-isobenzofuran-base, the 7-isobenzofuran-base, quinolyl, the 3-quinolyl, the 4-quinolyl, the 5-quinolyl, the 6-quinolyl, the 7-quinolyl, the 8-quinolyl, the 1-isoquinolyl, the 3-isoquinolyl, the 4-isoquinolyl, the 5-isoquinolyl, the 6-isoquinolyl, the 7-isoquinolyl, the 8-isoquinolyl, the 2-quinoxalinyl, the 5-quinoxalinyl, the 6-quinoxalinyl, the 1-carbazyl, the 2-carbazyl, the 3-carbazyl, the 4-carbazyl, the 9-carbazyl, the 1-phenanthridinyl, the 2-phenanthridinyl, the 3-phenanthridinyl, the 4-phenanthridinyl, the 6-phenanthridinyl, the 7-phenanthridinyl, the 8-phenanthridinyl, the 9-phenanthridinyl, the 10-phenanthridinyl, the 1-acridinyl, the 2-acridinyl, the 3-acridinyl, the 4-acridinyl, the 9-acridinyl, 1,7-phenanthroline-2-base, 1,7-phenanthroline-3-base, 1,7-phenanthroline-4-base, 1,7-phenanthroline-5-base, 1,7-phenanthroline-6-base, 1,7-phenanthroline-8-base, 1,7-phenanthroline-9-base, 1,7-phenanthroline-10-base, 1,8-phenanthroline-2-base, 1,8-phenanthroline-3-base, 1,8-phenanthroline-4-base, 1,8-phenanthroline-5-base, 1,8-phenanthroline-6-base, 1,8-phenanthroline-7-base, 1,8-phenanthroline-9-base, 1,8-phenanthroline-10-base, 1,9-phenanthroline-2-base, 1,9-phenanthroline-3-base, 1,9-phenanthroline-4-base, 1,9-phenanthroline-5-base, 1,9-phenanthroline-6-base, 1,9-phenanthroline-7-base, 1,9-phenanthroline-8-base, 1,9-phenanthroline-10-base, 1,10-phenanthroline-2-base, 1,10-phenanthroline-3-base, 1,10-phenanthroline-4-base, 1,10-phenanthroline-5-base, 2,9-phenanthroline-1-base, 2,9-phenanthroline-3-base, 2,9-phenanthroline-4-base, 2,9-phenanthroline-5-base, 2,9-phenanthroline-6-base, 2,9-phenanthroline-7-base, 2,9-phenanthroline-8-base, 2,9-phenanthroline-10-base, 2,8-phenanthroline-1-base, 2,8-phenanthroline-3-base, 2,8-phenanthroline-4-base, 2,8-phenanthroline-5-base, 2,8-phenanthroline-6-base, 2,8-phenanthroline-7-base, 2,8-phenanthroline-9-base, 2,8-phenanthroline-10-base, 2,7-phenanthroline-1-base, 2,7-phenanthroline-3-base, 2,7-phenanthroline-4-base, 2,7-phenanthroline-5-base, 2,7-phenanthroline-6-base, 2,7-phenanthroline-8-base, 2,7-phenanthroline-9-base, 2,7-phenanthroline-10-base, the 1-phenazinyl, the 2-phenazinyl, the 1-phenothiazinyl, the 2-phenothiazinyl, the 3-phenothiazinyl, the 4-phenothiazinyl, the lysivane base, 1-fen piperazine base, 2-fen piperazine base, 3-fen piperazine base, 4-fen piperazine base, 10-fen piperazine base, 2- azoles base, 4- azoles base, 5- azoles base, 2- di azoly, 5- di azoly, 3-furazan base, the 2-thienyl, the 3-thienyl, 2-methylpyrrole-1-base, 2-methylpyrrole-3-base, 2-methylpyrrole-4-base, 2-methylpyrrole-5-base, 3-methylpyrrole-1-base, 3-methylpyrrole-2-base, 3-methylpyrrole-4-base, 3-methylpyrrole-5-base, 2-tert-butyl group pyrroles-4-base, 3-(2-phenyl propyl) pyrroles-1-base, 2-methyl isophthalic acid-indyl, 4-methyl isophthalic acid-indyl, 2-methyl-3-indyl, 4-methyl-3-indyl, the 2-tert-butyl group-1-indyl, the 4-tert-butyl group-1-indyl, the 2-tert-butyl group-3-indyl, the 4-tert-butyl group-3-indyl etc.
As replacing or unsubstituted carbon number is the example of 1～50 alkyl, can enumerate methyl, ethyl, propyl group, isopropyl, normal-butyl, sec-butyl, isobutyl group, the tert-butyl group, n-pentyl, n-hexyl, n-heptyl, n-octyl, methylol, the 1-ethoxy, the 2-ethoxy, 2-hydroxyl isobutyl group, 1, the 2-dihydroxy ethyl, 1,3-dihydroxy isopropyl, 2, the 3-dihydroxy tert-butyl group, 1,2,3-trihydroxy propyl group, chloromethyl, the 1-chloroethyl, the 2-chloroethyl, 2-chlorine isobutyl group, 1, the 2-Dichloroethyl, 1,3-two chloro isopropyls, 2, the 3-dichloro tert-butyl group, 1,2,3-three chloropropyls, bromomethyl, the 1-bromoethyl, the 2-bromoethyl, 2-bromine isobutyl group, 1,2-two bromoethyls, 1,3-dibromo isopropyl, 2, the 3-dibromo tert-butyl group, 1,2,3-three bromopropyls, iodomethyl, 1-iodine ethyl, 2-iodine ethyl, 2-iodine isobutyl group, 1,2-diiodo-ethyl, 1,3-diiodo-isopropyl, 2, the 3-diiodo-tert-butyl group, 1,2,3-triiodo propyl group, amino methyl, the 1-amino-ethyl, the 2-amino-ethyl, 2-aminoisobutyric base, 1, the 2-diamino ethyl, 1,3-diaminourea isopropyl, 2, the 3-diaminourea tert-butyl group, 1,2,3-triamido propyl group, cyano methyl, the 1-cyano ethyl, the 2-cyano ethyl, 2-cyano group isobutyl group, 1,2-dicyano ethyl, 1,3-dicyano isopropyl, 2, the 3-dicyano tert-butyl group, 1,2,3-tricyano propyl group, the nitro methyl, the 1-nitro-ethyl, the 2-nitro-ethyl, 2-nitro isobutyl group, 1,2-dinitro ethyl, 1,3-dinitro isopropyl, 2, the 3-dinitro tert-butyl group, 1,2,3-trinitro-propyl group, cyclopropyl, cyclobutyl, cyclopenta, cyclohexyl, the 4-methylcyclohexyl, the 1-adamantyl, the 2-adamantyl, the 1-norborny, 2-norborny etc.
Replace or unsubstituted carbon number is that 1～50 alkoxyl is the group that usefulness-OY represents, example as Y, can enumerate methyl, ethyl, propyl group, isopropyl, normal-butyl, sec-butyl, isobutyl group, the tert-butyl group, n-pentyl, n-hexyl, n-heptyl, n-octyl, methylol, the 1-ethoxy, the 2-ethoxy, 2-hydroxyl isobutyl group, 1, the 2-dihydroxy ethyl, 1,3-dihydroxy isopropyl, 2, the 3-dihydroxy tert-butyl group, 1,2,3-trihydroxy propyl group, chloromethyl, the 1-chloroethyl, the 2-chloroethyl, 2-chlorine isobutyl group, 1, the 2-Dichloroethyl, 1,3-two chloro isopropyls, 2, the 3-dichloro tert-butyl group, 1,2,3-three chloropropyls, bromomethyl, the 1-bromoethyl, the 2-bromoethyl, 2-bromine isobutyl group, 1,2-two bromoethyls, 1,3-dibromo isopropyl, 2, the 3-dibromo tert-butyl group, 1,2,3-three bromopropyls, iodomethyl, 1-iodine ethyl, 2-iodine ethyl, 2-iodine isobutyl group, 1,2-diiodo-ethyl, 1,3-diiodo-isopropyl, 2, the 3-diiodo-tert-butyl group, 1,2,3-triiodo propyl group, amino methyl, the 1-amino-ethyl, the 2-amino-ethyl, 2-aminoisobutyric base, 1, the 2-diamino ethyl, 1,3-diaminourea isopropyl, 2, the 3-diaminourea tert-butyl group, 1,2,3-triamido propyl group, cyano methyl, the 1-cyano ethyl, the 2-cyano ethyl, 2-cyano group isobutyl group, 1,2-dicyano ethyl, 1,3-dicyano isopropyl, 2, the 3-dicyano tert-butyl group, 1,2,3-tricyano propyl group, the nitro methyl, the 1-nitro-ethyl, the 2-nitro-ethyl, 2-nitro isobutyl group, 1,2-dinitro ethyl, 1,3-dinitro isopropyl, 2, the 3-dinitro tert-butyl group, 1,2,3-trinitro-propyl group etc.
As replacing or unsubstituted carbon number is the example of 1～50 aralkyl, can enumerate benzyl, the 1-phenethyl, the 2-phenethyl, 1-propyloxy phenyl base, 2-propyloxy phenyl base, the phenyl tert-butyl group, α-menaphthyl, 1-α-naphthalene ethyl, 2-α-naphthalene ethyl, 1-α-naphthalene isopropyl, 2-α-naphthalene isopropyl, β-menaphthyl, 1-β-naphthalene ethyl, 2-β-naphthalene ethyl, 1-β-naphthalene isopropyl, 2-β-naphthalene isopropyl, 1-pyrrole radicals methyl, 2-(1-pyrrole radicals) ethyl, to methyl-benzyl, between methyl-benzyl, adjacent methyl-benzyl, p-chlorobenzyl, the m-chloro benzyl, o-chlorobenzyl, to bromobenzyl, between bromobenzyl, adjacent bromobenzyl, to the iodine benzyl, between the iodine benzyl, adjacent iodine benzyl, to hydroxybenzyl, between hydroxybenzyl, adjacent hydroxybenzyl, PAB, between aminobenzyl, adjacent aminobenzyl, to nitrobenzyl, between nitrobenzyl, adjacent nitrobenzyl, to the cyano group benzyl, between the cyano group benzyl, o-cyanobenzyl, 1-hydroxyl-2-propyloxy phenyl base, 1-chloro-2-propyloxy phenyl base etc.
Replace or unsubstituted annular atoms number is 5～50 aryloxy group by-OY ' expression, example as Y ', can enumerate phenyl, the 1-naphthyl, the 2-naphthyl, the 1-anthryl, the 2-anthryl, the 9-anthryl, the 1-phenanthryl, the 2-phenanthryl, the 3-phenanthryl, the 4-phenanthryl, the 9-phenanthryl, 1-aphthacene base, 2-aphthacene base, 9-aphthacene base, the 1-pyrenyl, the 2-pyrenyl, the 4-pyrenyl, the 2-xenyl, the 3-xenyl, the 4-xenyl, p-terphenyl-4-base, p-terphenyl-3-base, p-terphenyl-2-base, between terphenyl-4-base, between terphenyl-3-base, between terphenyl-2-base, o-tolyl, between tolyl, p-methylphenyl, to tert-butyl-phenyl, to (2-phenyl propyl) phenyl, 3-methyl-2-naphthyl, 4-methyl isophthalic acid-naphthyl, 4-methyl isophthalic acid-anthryl, 4 '-methyl biphenyl; 4 "-the tert-butyl group-para-terpheny-4-base, the 2-pyrrole radicals, the 3-pyrrole radicals, pyrazinyl, the 2-pyridine radicals, the 3-pyridine radicals, the 4-pyridine radicals, the 2-indyl, the 3-indyl, the 4-indyl, the 5-indyl, the 6-indyl, the 7-indyl, the 1-isoindolyl, the 3-isoindolyl, the 4-isoindolyl, the 5-isoindolyl, the 6-isoindolyl, the 7-isoindolyl, the 2-furyl, the 3-furyl, the 2-benzofuranyl, the 3-benzofuranyl, the 4-benzofuranyl, the 5-benzofuranyl, the 6-benzofuranyl, the 7-benzofuranyl, the 1-isobenzofuran-base, the 3-isobenzofuran-base, the 4-isobenzofuran-base, the 5-isobenzofuran-base, the 6-isobenzofuran-base, the 7-isobenzofuran-base, the 2-quinolyl, the 3-quinolyl, the 4-quinolyl, the 5-quinolyl, the 6-quinolyl, the 7-quinolyl, the 8-quinolyl, the 1-isoquinolyl, the 3-isoquinolyl, the 4-isoquinolyl, the 5-isoquinolyl, the 6-isoquinolyl, the 7-isoquinolyl, the 8-isoquinolyl, the 2-quinoxalinyl, the 5-quinoxalinyl, the 6-quinoxalinyl, the 1-carbazyl, the 2-carbazyl, the 3-carbazyl, the 4-carbazyl, the 1-phenanthridinyl, the 2-phenanthridinyl, the 3-phenanthridinyl, the 4-phenanthridinyl, the 6-phenanthridinyl, the 7-phenanthridinyl, the 8-phenanthridinyl, the 9-phenanthridinyl, the 10-phenanthridinyl, the 1-acridinyl, the 2-acridinyl, the 3-acridinyl, the 4-acridinyl, the 9-acridinyl, 1,7-phenanthroline-2-base, 1,7-phenanthroline-3-base, 1,7-phenanthroline-4-base, 1,7-phenanthroline-5-base, 1,7-phenanthroline-6-base, 1,7-phenanthroline-8-base, 1,7-phenanthroline-9-base, 1,7-phenanthroline-10-base, 1,8-phenanthroline-2-base, 1,8-phenanthroline-3-base, 1,8-phenanthroline-4-base, 1,8-phenanthroline-5-base, 1,8-phenanthroline-6-base, 1,8-phenanthroline-7-base, 1,8-phenanthroline-9-base, 1,8-phenanthroline-10-base, 1,9-phenanthroline-2-base, 1,9-phenanthroline-3-base, 1,9-phenanthroline-4-base, 1,9-phenanthroline-5-base, 1,9-phenanthroline-6-base, 1,9-phenanthroline-7-base, 1,9-phenanthroline-8-base, 1,9-phenanthroline-10-base, 1,10-phenanthroline-2-base, 1,10-phenanthroline-3-base, 1,10-phenanthroline-4-base, 1,10-phenanthroline-5-base, 2,9-phenanthroline-1-base, 2,9-phenanthroline-3-base, 2,9-phenanthroline-4-base, 2,9-phenanthroline-5-base, 2,9-phenanthroline-6-base, 2,9-phenanthroline-7-base, 2,9-phenanthroline-8-base, 2,9-phenanthroline-10-base, 2,8-phenanthroline-1-base, 2,8-phenanthroline-3-base, 2,8-phenanthroline-4-base, 2,8-phenanthroline-5-base, 2,8-phenanthroline-6-base, 2,8-phenanthroline-7-base, 2,8-phenanthroline-9-base, 2,8-phenanthroline-10-base, 2,7-phenanthroline-1-base, 2,7-phenanthroline-3-base, 2,7-phenanthroline-4-base, 2,7-phenanthroline-5-base, 2,7-phenanthroline-6-base, 2,7-phenanthroline-8-base, 2,7-phenanthroline-9-base, 2,7-phenanthroline-10-base, the 1-phenazinyl, the 2-phenazinyl, the 1-phenothiazinyl, the 2-phenothiazinyl, the 3-phenothiazinyl, the 4-phenothiazinyl, 1-fen piperazine base, 2-fen piperazine base, 3-fen piperazine base, 4-fen piperazine base, 2- azoles base, 4- azoles base, 5- azoles base, 2- di azoly, 5- di azoly, 3-furazan base, the 2-thienyl, the 3-thienyl, 2-methylpyrrole-1-base, 2-methylpyrrole-3-base, 2-methylpyrrole-4-base, 2-methylpyrrole-5-base, 3-methylpyrrole-1-base, 3-methylpyrrole-2-base, 3-methylpyrrole-4-base, 3-methylpyrrole-5-base, 2-tert-butyl group pyrroles-4-base, 3-(2-phenyl propyl) pyrroles-1-base, 2-methyl isophthalic acid-indyl, 4-methyl isophthalic acid-indyl, 2-methyl-3-indyl, 4-methyl-3-indyl, the 2-tert-butyl group-1-indyl, the 4-tert-butyl group-1-indyl, the 2-tert-butyl group-3-indyl, the 4-tert-butyl group-3-indyl etc.
Replace or unsubstituted annular atoms number is 5～50 arylthio by-SY " expression; as Y " example, can enumerate phenyl, the 1-naphthyl, the 2-naphthyl, the 1-anthryl, the 2-anthryl, the 9-anthryl, the 1-phenanthryl, the 2-phenanthryl, the 3-phenanthryl, the 4-phenanthryl, the 9-phenanthryl, 1-aphthacene base, 2-aphthacene base, 9-aphthacene base, the 1-pyrenyl, the 2-pyrenyl, the 4-pyrenyl, the 2-xenyl, the 3-xenyl, the 4-xenyl, p-terphenyl-4-base, p-terphenyl-3-base, p-terphenyl-2-base, between terphenyl-4-base, between terphenyl-3-base, between terphenyl-2-base, o-tolyl, between tolyl, p-methylphenyl, to tert-butyl-phenyl, to (2-phenyl propyl) phenyl, 3-methyl-2-naphthyl, 4-methyl isophthalic acid-naphthyl, 4-methyl isophthalic acid-anthryl, 4 '-methyl biphenyl; 4 "-the tert-butyl group-para-terpheny-4-base, the 2-pyrrole radicals, the 3-pyrrole radicals, pyrazinyl, the 2-pyridine radicals, the 3-pyridine radicals, the 4-pyridine radicals, the 2-indyl, the 3-indyl, the 4-indyl, the 5-indyl, the 6-indyl, the 7-indyl, the 1-isoindolyl, the 3-isoindolyl, the 4-isoindolyl, the 5-isoindolyl, the 6-isoindolyl, the 7-isoindolyl, the 2-furyl, the 3-furyl, the 2-benzofuranyl, the 3-benzofuranyl, the 4-benzofuranyl, the 5-benzofuranyl, the 6-benzofuranyl, the 7-benzofuranyl, the 1-isobenzofuran-base, the 3-isobenzofuran-base, the 4-isobenzofuran-base, the 5-isobenzofuran-base, the 6-isobenzofuran-base, the 7-isobenzofuran-base, the 2-quinolyl, the 3-quinolyl, the 4-quinolyl, the 5-quinolyl, the 6-quinolyl, the 7-quinolyl, the 8-quinolyl, the 1-isoquinolyl, the 3-isoquinolyl, the 4-isoquinolyl, the 5-isoquinolyl, the 6-isoquinolyl, the 7-isoquinolyl, the 8-isoquinolyl, the 2-quinoxalinyl, the 5-quinoxalinyl, the 6-quinoxalinyl, the 1-carbazyl, the 2-carbazyl, the 3-carbazyl, the 4-carbazyl, the 1-phenanthridinyl, the 2-phenanthridinyl, the 3-phenanthridinyl, the 4-phenanthridinyl, the 6-phenanthridinyl, the 7-phenanthridinyl, the 8-phenanthridinyl, the 9-phenanthridinyl, the 10-phenanthridinyl, the 1-acridinyl, the 2-acridinyl, the 3-acridinyl, the 4-acridinyl, the 9-acridinyl, 1,7-phenanthroline-2-base, 1,7-phenanthroline-3-base, 1,7-phenanthroline-4-base, 1,7-phenanthroline-5-base, 1,7-phenanthroline-6-base, 1,7-phenanthroline-8-base, 1,7-phenanthroline-9-base, 1,7-phenanthroline-10-base, 1,8-phenanthroline-2-base, 1,8-phenanthroline-3-base, 1,8-phenanthroline-4-base, 1,8-phenanthroline-5-base, 1,8-phenanthroline-6-base, 1,8-phenanthroline-7-base, 1,8-phenanthroline-9-base, 1,8-phenanthroline-10-base, 1,9-phenanthroline-2-base, 1,9-phenanthroline-3-base, 1,9-phenanthroline-4-base, 1,9-phenanthroline-5-base, 1,9-phenanthroline-6-base, 1,9-phenanthroline-7-base, 1,9-phenanthroline-8-base, 1,9-phenanthroline-10-base, 1,10-phenanthroline-2-base, 1,10-phenanthroline-3-base, 1,10-phenanthroline-4-base, 1,10-phenanthroline-5-base, 2,9-phenanthroline-1-base, 2,9-phenanthroline-3-base, 2,9-phenanthroline-4-base, 2,9-phenanthroline-5-base, 2,9-phenanthroline-6-base, 2,9-phenanthroline-7-base, 2,9-phenanthroline-8-base, 2,9-phenanthroline-10-base, 2,8-phenanthroline-1-base, 2,8-phenanthroline-3-base, 2,8-phenanthroline-4-base, 2,8-phenanthroline-5-base, 2,8-phenanthroline-6-base, 2,8-phenanthroline-7-base, 2,8-phenanthroline-9-base, 2,8-phenanthroline-10-base, 2,7-phenanthroline-1-base, 2,7-phenanthroline-3-base, 2,7-phenanthroline-4-base, 2,7-phenanthroline-5-base, 2,7-phenanthroline-6-base, 2,7-phenanthroline-8-base, 2,7-phenanthroline-9-base, 2,7-phenanthroline-10-base, the 1-phenazinyl, the 2-phenazinyl, the 1-phenothiazinyl, the 2-phenothiazinyl, the 3-phenothiazinyl, the 4-phenothiazinyl, 1-fen piperazine base, 2-fen piperazine base, 3-fen piperazine base, 4-fen piperazine base, 2- azoles base, 4- azoles base, 5- azoles base, 2- di azoly, 5- di azoly, 3-furazan base, the 2-thienyl, the 3-thienyl, 2-methylpyrrole-1-base, 2-methylpyrrole-3-base, 2-methylpyrrole-4-base, 2-methylpyrrole-5-base, 3-methylpyrrole-1-base, 3-methylpyrrole-2-base, 3-methylpyrrole-4-base, 3-methylpyrrole-5-base, 2-tert-butyl group pyrroles-4-base, 3-(2-phenyl propyl) pyrroles-1-base, 2-methyl isophthalic acid-indyl, 4-methyl isophthalic acid-indyl, 2-methyl-3-indyl, 4-methyl-3-indyl, the 2-tert-butyl group-1-indyl, the 4-tert-butyl group-1-indyl, the 2-tert-butyl group-3-indyl, the 4-tert-butyl group-3-indyl etc.
Replace or unsubstituted carbon number is that 1～50 carboxyl can be represented with-COOZ, example as Z, can enumerate methyl, ethyl, propyl group, isopropyl, normal-butyl, sec-butyl, isobutyl group, the tert-butyl group, n-pentyl, n-hexyl, n-heptyl, n-octyl, methylol, the 1-ethoxy, the 2-ethoxy, 2-hydroxyl isobutyl group, 1, the 2-dihydroxy ethyl, 1,3-dihydroxy isopropyl, 2, the 3-dihydroxy tert-butyl group, 1,2,3-trihydroxy propyl group, chloromethyl, the 1-chloroethyl, the 2-chloroethyl, 2-chlorine isobutyl group, 1, the 2-Dichloroethyl, 1,3-two chloro isopropyls, 2, the 3-dichloro tert-butyl group, 1,2,3-three chloropropyls, bromomethyl, the 1-bromoethyl, the 2-bromoethyl, 2-bromine isobutyl group, 1,2-two bromoethyls, 1,3-dibromo isopropyl, 2, the 3-dibromo tert-butyl group, 1,2,3-three bromopropyls, iodomethyl, 1-iodine ethyl, 2-iodine ethyl, 2-iodine isobutyl group, 1,2-diiodo-ethyl, 1,3-diiodo-isopropyl, 2, the 3-diiodo-tert-butyl group, 1,2,3-triiodo propyl group, amino methyl, the 1-amino-ethyl, the 2-amino-ethyl, 2-aminoisobutyric base, 1, the 2-diamino ethyl, 1,3-diaminourea isopropyl, 2, the 3-diaminourea tert-butyl group, 1,2,3-triamido propyl group, cyano methyl, the 1-cyano ethyl, the 2-cyano ethyl, 2-cyano group isobutyl group, 1,2-dicyano ethyl, 1,3-dicyano isopropyl, 2, the 3-dicyano tert-butyl group, 1,2,3-tricyano propyl group, the nitro methyl, the 1-nitro-ethyl, the 2-nitro-ethyl, 2-nitro isobutyl group, 1,2-dinitro ethyl, 1,3-dinitro isopropyl, 2, the 3-dinitro tert-butyl group, 1,2,3-trinitro-propyl group etc.
As the example of replacement or unsubstituted styryl, can enumerate 2-phenyl-1-vinyl, 2,2-diphenyl-1-vinyl, 1,2,2-triphenyl-1-vinyl etc.
As the example of halogen radical, can enumerate fluorine, chlorine, bromine, iodine etc.
L is 1～5 integer, is preferably 1～2 integer.M is 0～6 integer, is preferably 0～4 integer.
In addition, when l 〉=2, l Ar
1Can be same to each other or different to each other.
In addition, when m 〉=2, m X can be same to each other or different to each other.
Object lesson with the compound of formula (1) expression is expressed as follows.
[changing 2]
Also the fluorescence compound can be added in luminescent layer as dopant, improve luminescent properties.Dopant can use known material respectively as dopant materials such as long-lives, preferably will be used as the dopant material of luminescent material with the material of formula (2) expression.
[changing 3]
(in the formula, Ar
2～Ar
4Be that replacement or unsubstituted ring carbon atom number are 6～50 aromatic group, replacement or unsubstituted styryl, p is 1～4 integer.)
As replacing or unsubstituted ring carbon atom number is the example of 6～50 aromatic series base, can enumerate phenyl, the 1-naphthyl, the 2-naphthyl, the 1-anthryl, the 2-anthryl, the 9-anthryl, the 1-phenanthryl, the 2-phenanthryl, the 3-phenanthryl, the 4-phenanthryl, the 9-phenanthryl, 1-aphthacene base, 2-aphthacene base, 9-aphthacene base, the 1-pyrenyl, the 2-pyrenyl, the 4-pyrenyl, the 2-xenyl, the 3-xenyl, the 4-xenyl, p-terphenyl-4-base, p-terphenyl-3-base, p-terphenyl-2-base, between terphenyl-4-base, between terphenyl-3-base, between terphenyl-2-base, o-tolyl, between tolyl, p-methylphenyl, to tert-butyl-phenyl, to (2-phenyl propyl) phenyl, 3-methyl-2-naphthyl, 4-methyl isophthalic acid-naphthyl, 4-methyl isophthalic acid-anthryl, 4 '-methyl biphenyl; 4 "-the tert-butyl group-para-terpheny-4-base, the 2-fluorenyl, 9,9-dimethyl-2-fluorenyl, 3-fluoranthene base etc.
Preferred phenyl, 1-naphthyl, 2-naphthyl, 9-phenanthryl, 1-aphthacene base, 2-aphthacene base, 9-aphthacene base, 1-pyrenyl, 2-pyrenyl, 4-pyrenyl, 2-xenyl, 3-xenyl, 4-xenyl, o-tolyl, a tolyl, p-methylphenyl, to tert-butyl-phenyl, 2-fluorenyl, 9,9-dimethyl-2-fluorenyl, 3-fluoranthene base etc.
As the example of replacement or unsubstituted styryl, can enumerate 2-phenyl-1-vinyl, 2,2-diphenyl-1-vinyl, 1,2,2-triphenyl-1-vinyl etc.
P is 1～4 integer.
In addition, when p 〉=2, p Ar
3, Ar
4Can be same to each other or different to each other.
Object lesson with the compound of formula (2) expression is expressed as follows.
[changing 4]
(4-2) hole transporting layer
In the present invention, can between luminescent layer and hole injection layer, hole transporting layer be set.
Hole transporting layer preferably under lower electric field strength with the material of cavity conveying to luminescent layer.That is, the mobility in hole is preferably applying 10
4～10
6During the electric field of V/cm is 10
-4Cm
2/ V is more than second.
As the material that forms hole transporting layer, can be from photoconductive material, select arbitrarily material as the material of the charge transport material in hole or the material known that is used for the hole transporting layer of EL element usually and used in the past.
As object lesson, for example can enumerate triazole derivative (with reference to United States Patent (USP) 3,112, No. 197 specifications etc.), the oxadiazole derivative is (with reference to United States Patent (USP) 3,189, No. 447 specifications etc.), imdazole derivatives (the special public clear 37-16096 communique of reference etc.), poly-aromatic yl paraffin derivative is (with reference to United States Patent (USP) 3,615, No. 402 specifications, United States Patent (USP) the 3rd, 820, No. 989 specifications, United States Patent (USP) the 3rd, 542, No. 544 specifications, special public clear 45-555 communique, special public clear 51-10983 communique, the spy opens clear 51-93224 communique, the spy opens clear 55-17105 communique, the spy opens clear 56-4148 communique, the spy opens clear 55-108667 communique, the spy opens clear 55-156953 communique, the spy opens clear 56-36656 communique etc.), pyrazoline derivative and pyrazolone derivative are (with reference to United States Patent (USP) the 3rd, 180, No. 729 specifications, United States Patent (USP) the 4th, 278, No. 746 specifications, the spy opens clear 55-88064 communique, the spy opens clear 55-88065 communique, the spy opens clear 49-105537 communique, the spy opens clear 55-51086 communique, the spy opens clear 56-80051 communique, the spy opens clear 56-88141 communique, the spy opens clear 57-45545 communique, the spy opens clear 54-112637 communique, the spy opens clear 55-74546 communique etc.), phenylenediamine derivative is (with reference to United States Patent (USP) the 3rd, 615, No. 404 specifications, special public clear 51-10105 communique, special public clear 46-3712 communique, special public clear 47-25336 communique, the spy opens clear 54-53435 communique, the spy opens clear 54-110536 communique, the spy opens clear 54-119925 communique etc.), the arylamine derivative is (with reference to United States Patent (USP) the 3rd, 567, No. 450 specifications, United States Patent (USP) the 3rd, 180, No. 703 specifications, United States Patent (USP) the 3rd, 240, No. 597 specifications, United States Patent (USP) the 3rd, 658, No. 520 specifications, United States Patent (USP) the 4th, 232, No. 103 specifications, United States Patent (USP) the 4th, 175, No. 961 specifications, United States Patent (USP) the 4th, 012, No. 376 specifications, special public clear 49-35702 communique, special public clear 39-27577 communique, the spy opens clear 55-144250 communique, the spy opens clear 56-119132 communique, the spy opens clear 56-22437 communique, DRP the 1st, 110, No. 518 specifications etc.), the amino chalcone derivative that replaces is (with reference to United States Patent (USP) the 3rd, 526, No. 501 specifications etc.), the Zole derivatives (is disclosed in United States Patent (USP) the 3rd, 257, compound in No. 203 specifications etc.), styrene anthracene derivant (opening clear 56-46234 communique etc. with reference to the spy), fluorenone derivatives (opening clear 54-110837 communique etc. with reference to the spy), hydazone derivative is (with reference to United States Patent (USP) the 3rd, 717, No. 462 specifications, the spy opens clear 54-59143 communique, the spy opens clear 55-52063 communique, the spy opens clear 55-52064 communique, the spy opens clear 55-46760 communique, the spy opens clear 55-85495 communique, the spy opens clear 57-11350 communique, the spy opens clear 57-148749 communique, Te Kaiping 2-311591 communique etc.), stilbene derivatives (is opened clear 61-210363 communique with reference to the spy, the spy opens clear 61-228451 communique, the spy opens clear 61-14642 communique, the spy opens clear 61-72255 communique, the spy opens clear 62-47646 communique, the spy opens clear 62-36674 communique, the spy opens clear 62-10652 communique, the spy opens clear 62-30255 communique, the spy opens clear 60-93455 communique, the spy opens clear 60-94462 communique, the spy opens clear 60-174749 communique, the spy opens clear 60-175052 communique etc.), silazane (silazane) derivative (United States Patent (USP) the 4th, 950, No. 950 specifications), polysilane system (spy opens flat 2-204996 communique), aniline based copolymer (spy opens flat 2-282263 communique), be disclosed in electroconductive polymer oligomer (particularly thiophene oligomers) that the spy opens flat 1-211399 communique etc.
Hole transporting layer can be by forming with known method such as vacuum vapour deposition, spin-coating method, casting, LB methods above-claimed cpd.Thickness to hole transporting layer has no particular limits, but is preferably 5nm～5 μ m, is preferably 5～40nm especially.This hole transporting layer can by by a kind of in the above-mentioned material or form more than two kinds-layer constitutes.The layer that also can be laminated in addition, by the hole transporting layer that the compound of other kind is formed.
(4-3) hole injection layer
Material as hole injection layer, can use and the hole transporting layer identical materials, use porphyrin (Port Le Off ィ リ Application) compound (be disclosed in the spy and open compound in the clear 63-2956965 communique etc.), aromatic uncle amine compound and styrylamine compound are (with reference to United States Patent (USP) the 4th, 127, No. 412 specifications, the spy opens clear 53-27033 communique, the spy opens clear 54-58445 communique, the spy opens clear 54-149634 communique, the spy opens clear 54-64299 communique, the spy opens clear 55-79450 communique, the spy opens clear 55-144250 communique, the spy opens clear 56-119132 communique, the spy opens clear 61-295558 communique, the spy opens clear 61-98353 communique, the spy opens clear 63-295695 communique etc.), especially preferably use aromatic uncle amine compound.
In addition, can also enumerate at United States Patent (USP) the 5th, 061, the compound that in molecule, has two condensation aromatic rings of record, for example 4 in No. 569,4 '-two (N-(1-naphthyl)-N-phenyl amido) biphenyl (below abbreviate NPD as), can also enumerate the spy open the triphenylamine units of putting down in writing in the flat 4-308688 communique be connected to three star bursts (star burst) type 4,4 ', 4 "-three (N-(3-aminomethyl phenyl)-N-phenyl amido) triphenylamine (below abbreviate MTDATA as) etc.
In addition, except above-mentioned aromatic series two methine based compounds, inorganic compounds such as p type Si, p type SiC also can be as the material of hole injection layer.In addition, organic semiconductor layer also is the part of hole injection layer, is to help the hole to the injection of luminescent layer or the electronics layer to the injection of luminescent layer, and suitable use has 10
-10The layer of the conductivity that S/cm is above.As the material of this organic semiconductor layer, can use to contain thiophene oligomers or open disclosedly in the flat 8-193191 communique to contain conductivity oligomer such as arylamine oligomer, contain arylamine dendritic conductivity dendritics such as (デ Application De リ マ one) etc. the spy.
Hole injection layer can be by forming with for example known method such as vacuum vapour deposition, spin-coating method, casting, LB method above-claimed cpd.
For fear of the damage of anode when forming film, the thickness of hole injection layer is preferably 40nm～1000nm.60～300nm more preferably, and then be preferably 100～200nm.
Hole injection layer can be by being made of the one deck a kind of or that form more than two kinds in the above-mentioned material.Perhaps, also can be the layer that is laminated by the hole injection layer of forming with above-mentioned hole injection layer compound not of the same race.
(4-4) electron supplying layer
In the present invention, can between negative electrode and luminescent layer, electron supplying layer be set.
If suitably select electron supplying layer with the thickness of counting nm～number μ m, apply 10
4～10
6During the electric field of V/cm, the preferred electron mobility is 10
-5Cm
2More than/the Vs.
As the material that in electron supplying layer, uses, suitable the is metal complex of oxine or its derivative for example.
As the object lesson of the metal complex of oxine or its derivative, can enumerate the metal-chelating oxine compound of the chelate that contains oxine (oxine) (being generally 8-quinolinol or oxine).
For example the Alq that puts down in writing in the project of luminescent material can be used as electron injecting layer.
On the other hand, as the oxadiazole derivative, can enumerate the electron transport compound of representing with following general formula.
[changing 5]
(in the formula, Ar
5, Ar
6, Ar
7, Ar
9, Ar
10, Ar
13Expression replaces or unsubstituted aryl respectively, can be the same or different each other.In addition, Ar
8,, Ar
11, Ar
12Expression replaces or unsubstituted arlydene, can be the same or different each other.)
Here, as aryl, can enumerate phenyl, xenyl, anthryl, perylene base, pyrenyl.In addition, as arlydene, can enumerate phenylene, naphthylene, biphenylene, anthrylene, Ya perylene base, inferior pyrenyl etc.In addition, as substituting group, can enumerate carbon number and be 1～10 alkyl, carbon number and be 1～10 alkoxyl or cyano group etc.This electron transport compound preferably has film shaped property.
As the concrete example of above-mentioned electron transport compound, can enumerate following compound.
[changing 6]
The nitogen-contained heterocycle derivant of representing with following formula
[changing 7]
(in the formula, A
1～A
3Be nitrogen-atoms or carbon atom, R is that can to have substituent carbon number be 6～60 aryl, can have substituent carbon number is that 3～60 heteroaryl, carbon number are that 1～20 alkyl, carbon number are that 1～20 haloalkyl, carbon number are 1～20 alkoxyl, n is 0～5 integer, when n is integer more than 2, a plurality of R can be mutually the same, can also be different.
In addition, adjacent a plurality of R bases combination each other, form to replace or unsubstituted carbon-ring type aliphat ring or, replacement or unsubstituted carbon-ring type aromatic ring.
Ar
14Being that can to have substituent carbon number be 6～60 aryl, can having substituent carbon number is 3～60 heteroaryl.
Ar
15Be that hydrogen atom, carbon number are that 1～20 alkyl, carbon number are that 1～20 haloalkyl, carbon number are 1～20 alkoxyl, can to have substituent carbon number be 6～60 aryl, can have substituent carbon number to be 3～60 heteroaryl.
Wherein, Ar
14, Ar
15In either party be that can to have substituent carbon number be 10～60 condensed ring radical, can have substituent carbon number to be 3～60 assorted condensed ring radical.
L
1, L
2Be respectively singly-bound, can to have substituent carbon number be 6～60 condensed ring, can have substituent carbon number is that 3～60 assorted condensed ring maybe can have substituent fluorenylidene.)
The nitogen-contained heterocycle derivant of representing with following formula
HAr-L
3-A
16-Ar
17
(in the formula, HAr is that can to have substituent carbon number be 3～40 nitrogen heterocyclic ring,
L
3Be singly-bound, can to have substituent carbon number be 6～60 arlydene, can have substituent carbon number is that 3～60 heteroarylidene maybe can have substituent fluorenylidene,
Ar
16Be that can to have substituent carbon number be 6～60 divalent aromatic hydrocarbyl,
Ar
17Be can have substituent carbon number be 6～60 aryl or
Can have substituent carbon number and be 3～60 heteroaryl.)
Electric-field light-emitting element shown in the Te Kaipingdi 09-087616 communique, that use the sila cyclopentadiene derivant of representing with following formula.
[changing 8]
(in the formula, Q
1And Q
2Separate, be that carbon number is 1～6 saturated or undersaturated alkyl, alkoxyl, alkenyloxy, alkynyloxy group, hydroxyl, replacement or unsubstituted aryl, replacement or unsubstituted heterocycle, perhaps Q
1And Q
2Combine and form the structure of saturated or undersaturated ring, R
1～R
4Separate, expression hydrogen; halogen; replacement or unsubstituted carbon number are 1～6 alkyl; alkoxyl; aryloxy group; perfluoroalkyl; perfluoro alkoxy; amino; alkyl-carbonyl; aryl carbonyl; alkoxy carbonyl; aryloxycarbonyl; azo group; the alkyl-carbonyl oxygen base; aryl carbonyl oxygen base; alkoxy-carbonyl oxy; aryloxycarbonyl oxygen base; sulfinyl; sulfonyl; sulfamoyl (ス Le Off ァ ニ Le); silicyl; carbamoyl; aryl; heterocyclic radical; thiazolinyl; alkynyl; nitro; formoxyl; nitroso; formyloxy; isocyano group; cyanate ester based; NCO; thiocyanate groups; isothiocyanate group or cyano group or replace when adjacent or unsubstituted ring carries out the structure that condensation forms)
Sila cyclopentadiene derivant shown in the Te Kaipingdi 09-194487 communique, that represent with following formula
[changing 9]
(in the formula, Q
3And Q
4Separate, be that carbon number is 1～6 saturated or undersaturated alkyl, alkoxyl, alkenyloxy, alkynyloxy group, replacement or unsubstituted aryl, replacement or unsubstituted heterocycle, perhaps Q
3And Q
4Combine and form the structure of saturated or undersaturated ring, R
5～R
8Separate; expression hydrogen; halogen; replacement or unsubstituted carbon number are 1～6 alkyl; alkoxyl; aryloxy group; perfluoroalkyl; perfluoro alkoxy; amino; alkyl-carbonyl; aryl carbonyl; alkoxy carbonyl; aryloxycarbonyl; azo group; the alkyl-carbonyl oxygen base; aryl carbonyl oxygen base; alkoxy-carbonyl oxy; aryloxycarbonyl oxygen base; sulfinyl; sulfonyl; sulfamoyl (ス Le Off ァ ニ Le); silicyl; carbamoyl; aryl; heterocyclic radical; thiazolinyl; alkynyl; nitro; formoxyl; nitroso; formyloxy; isocyano group; cyanate ester based; NCO; thiocyanate groups; isothiocyanate group or cyano group or replace when adjacent or unsubstituted ring carries out the structure that condensation forms and (wherein, works as R
5And R
8When being phenyl, Q
3And Q
4Not alkyl and phenyl, work as R
5And R
8When being thienyl, do not satisfy Q simultaneously
3And Q
4Be monovalence alkyl, R
6And R
7Be alkyl, aryl, thiazolinyl or R
6And R
7By condition, work as R in conjunction with the aliphatic group that forms ring
5And R
8When being silicyl, R
6, R
7, Q
3And Q
4Independently of one another, not that carbon number is 1～6 monovalence alkyl or hydrogen atom, work as R
5And R
6When condensing the structure that forms with phenyl ring, Q
3And Q
4Not alkyl and phenyl).)
The borane derivative that the special following formula of usefulness shown in the 2000-040586 communique is again represented
[changing 10]
[in the formula, R
9～R
16And Q
8Separate, expression hydrogen atom, saturated or undersaturated alkyl, aromatic series base, heterocyclic radical, substituted-amino, replacement boryl, alkoxyl or aryloxy group, Q
5, Q
6And Q
7Separate, represent saturated or undersaturated alkyl, aromatic series base, heterocyclic radical, substituted-amino, alkoxyl or aryloxy group, Q
7And Q
8Substituting group can mutually combine and form condensed ring, r represents 1～3 integer, when r is 2 when above, Q
7Can be different.Wherein, do not comprise that r is 1 and Q
5, Q
6And R
10Be methyl and R
16Be hydrogen atom or the situation that replaces boryl; With r be 3 and Q
7Situation for methyl.]
The compound that the following formula of usefulness shown in the Te Kaiping 10-088121 is represented
[changing 11]
(in the formula, Q
9And Q
10The dentate separate, that expression is represented with following formula, L
4Expression halogen atom, replacement or unsubstituted alkyl, replacement or unsubstituted cycloalkyl, replacement or unsubstituted aryl, replacement or unsubstituted heterocyclic or with-OR
17(R
17Be hydrogen atom, replacement or unsubstituted alkyl, replacement or unsubstituted cycloalkyl, replacement or unsubstituted aryl, replacement or unsubstituted heterocyclic.) or-O-Ga-Q
11(Q
12) (Q
11, Q
12With Q
9, Q
10Identical.) expression dentate.)
[changing 12]
(in the formula, ring A
4And A
5Be six Yuans aromatic ring structures that can have substituent bonding mutually.)
This metal complex, stronger as the performance of n N-type semiconductor N, the electronics injectability is big.And then the generation energy when forming complex is also low, so the bonding of the metal of established metal complex and dentate also becomes firmly, also can increase as the fluorescence quantum efficiency of luminescent material.
If enumerate the ring A of the dentate that forms above-mentioned formula
4And A
5Substituent concrete example, halogen atoms such as chlorine, bromine, iodine, fluorine are arranged; Replacement or unsubstituted alkyl such as methyl, ethyl, propyl group, butyl, sec-butyl, the tert-butyl group, amyl group, hexyl, heptyl, octyl group, stearyl, trichloromethyl; Phenyl, naphthyl, 3-aminomethyl phenyl, 3-methoxyphenyl, 3-fluorophenyl, 3-trichloromethyl phenyl, 3-trifluoromethyl, 3-nitrobenzophenone etc. replace or unsubstituted aryl; Methoxyl group, n-butoxy, tert-butoxy, trichlorine methoxyl group, trifluoro ethoxy, five fluorine propoxyl group, 2,2,3,3-tetrafluoro propoxyl group, 1,1,1,3,3,3-hexafluoro-2-propoxyl group, the own oxygen base of 6-(perfluor ethyl) etc. replace or unsubstituted alkoxyl; Phenoxy group, p-nitrophenyl oxygen base, tert-butyl group phenoxy group, 3-fluorophenoxy, pentafluorophenyl group, 3-4-trifluoromethylphenopendant etc. are replaced or unsubstituted aryloxy group; Methyl mercapto, ethylmercapto group, tert-butyl group sulfenyl, hexyl sulfenyl, octyl group sulfenyl, trifluoromethyl sulfenyl etc. replace or unsubstituted alkylthio group; Thiophenyl, p-nitrophenyl sulfenyl, tert-butyl benzene sulfenyl, 3-fluorobenzene sulfenyl, phenyl-pentafluoride sulfenyl, 3-trifluoromethyl thiophenyl etc. are replaced or unsubstituted arylthio; List or disubstituted amidos such as cyano group, nitro, amino, methylamino, dimethylamino, ethylamino, diethylamino, dipropyl amino, dibutylamino, diphenyl amino; Acyl aminos such as two (acetoxy-methyl) amino, two (acetoxyl group ethyl) amino, two (acetoxyl group propyl group) amino, two (acetoxyl group butyl) amino; Hydroxyl, siloxy, acyl group, carbamoyl carboxylic acid groups such as methylamino formoxyl, formyl-dimethylamino, ethylamino formoxyl, diethylamino formoxyl, propyl group carbamoyl, butyl carbamoyl, phenyl amino formoxyl, sulfonic group, imino group, cycloalkyl such as pentamethylene base, cyclohexyl; Aryl such as phenyl, naphthyl, xenyl, anthryl, phenanthryl, fluorenyl, pyrenyl; Heterocyclic radicals such as pyridine radicals, pyrazinyl, pyrimidine radicals, pyridazinyl, triazine radical, indyl, quinolyl, acridinyl, pyrrolidinyl, two alkyl, piperidyl, モ Le Off ォ リ ヅ ニ Le base, piperazinyl, ト リ ァ チ ニ Le base, carbazyl, furyl, thiophenyl, azoles base, di azoly, benzoxazol base, thiazolyl, thiadiazolyl group, benzothiazolyl, triazolyl, imidazole radicals, benzimidazolyl, プ ラ ニ Le base etc.In addition, also can form six Yuans aromatic rings or heterocycle between the above substituting group by bonding.
(4-5) electron injecting layer
In the present invention, can the electron injecting layer that be made of insulator or semiconductor be set between negative electrode and the electron injecting layer or between negative electrode and the luminescent layer.By such electron injecting layer is set, can prevent the leakage of current effectively, improve the electronics injection.
As insulator, preferably be used alone or in combination metallic compounds such as the halide that is selected from alkali metal chalcogenide, alkaline-earth metal-chalcogenide, alkali-metal halide and alkaline-earth metal, aluminium oxide, aluminium nitride, titanium oxide, silica, germanium oxide, silicon nitride, boron nitride, molybdenum oxide, ruthenium-oxide, vanadium oxide.In these metallic compounds, from the angle of electronics injection, preferred as alkali chalcogenide, alkaline-earth metal-chalcogenide.As preferred alkali metal chalcogenide, can enumerate for example Li
2O, LiO, Na
2S, Na
2Se and NaO.As preferred alkaline-earth metal-chalcogenide, can enumerate for example CaO, BaO, SrO, BeO, BaS and CaSe.As alkali-metal halide, can enumerate for example LiF, NaF, KF, LiCl, KCl and NaCl etc.As the halide of alkaline-earth metal, can enumerate CaF
2, BaF
2, SrF
2, MgF
2, BeF
2In the halide beyond fluoride or the fluoride.
As the semiconductor that constitutes electron injecting layer, can enumerate and contain a kind of or combination more than two kinds separately such as oxide, nitride or nitrogen oxide that is selected from least a element among Ba, Ca, Sr, Yb, Al, Ga, In, Li, Na, Cd, Mg, Si, Ta, Sb and the Zn.
Electron injecting layer is preferably microcrystal or noncrystalline.This is because form the film of homogeneous, can reduce pixel defectives such as stain.
In addition, also can the electron injecting layer of stacked use more than 2 kinds.
(4-6) reproducibility dopant
In the present invention, can contain the reproducibility dopant in the zone of conveying electronic or the interface zone of negative electrode and organic layer.So-called reproducibility dopant is defined as can be with the material of electron transport compound reduction.Therefore, so long as have the material of certain reproducibility, just can use various materials.For example, can suitably use the oxide of alkali metal, alkaline-earth metal, rare earth metal, alkali-metal oxide, alkali-metal halide, alkaline-earth metal, the halide of alkaline-earth metal, the oxide of rare earth metal or the halide of rare earth metal, alkali-metal organic coordination compounds, the organic coordination compounds of alkaline-earth metal, the organic coordination compounds of rare earth metal etc.
As preferred reproducibility dopant, can enumerate (work function: 2.36eV), K (work function: 2.28eV), Rb (work function: 2.16eV) and Cs (work function: alkali metal such as 1.95eV), or Ca (work function: 2.9eV), Sr (work function: 2.0～2.5eV) and Ba (work function: alkaline-earth metal such as 2.52eV) from Na.Wherein, preferred K, Rb and Cs, further preferred Rb or Cs, and then Cs preferably.In addition, also preferred alkali-metal combination more than two kinds in these especially preferably contains the combination of Cs, for example, and the combination of Cs and Na, Cs and K, Cs and Rb or Cs and Na and K.
Thickness to each organic layer of above-mentioned formation organic light emitting medium is not particularly limited, if thickness is thin excessively usually, is easy to generate aperture defectives such as (pin hole), on the contrary, if blocked up, then need to apply high voltage, so deterioration of efficiency is the scope of preferred usually number nm～1 μ m.
(5) reflection layer
Reflection layer uses and can reflect, see through the light that produces at the organic light emitting medium layer, forms the material of optical resonance portion with above-mentioned smooth reflective conductive layer.Specifically, can use metal, dielectric multilayer film etc.
As metal, the alloy that can enumerate metals such as Ag, Mg, Al, Au, Pt, Cu, Cr, Mo, W, Ta, Nb, Li, Mn, Ca, Yb, Ti, Ir, Be, Hf, Eu, Sr, Ba, Cs, Na and K or constitute by these metals.Wherein, preferred Al, Ag, Mg, Ce, Na, K, Cs, Li, Au, Pt, Cu, Ca and Ba.
The dielectric multilayer film is the film of multilayer laminated low refractive material and high-refraction material, and makes blooming (amassing of refractive index and thickness) separately become 1/4th of light wavelength.As the object lesson of low refractive material, can enumerate SiOx, NaF, LiF, CaFx, AlFx, MgFx.As the object lesson of high index of refraction, can enumerate AlOx, MgOx, NdOx, TiOx, CeOx, PbOx, ZnS, CdS, ZnSe.In addition, the scope of application of x is 1＜x＜3.
The thickness of reflection layer is preferably 2nm～500nm.If thinner than 2nm, when using as negative electrode, the electronics injection reduces, so the luminous efficiency of possible element reduces, perhaps the making of element becomes difficult, if thicker than 500nm, light penetration reduces, so the taking-up efficient of light might reduce.
(transparent electrode layer)
As transparency electrode, can enumerate ITO, IZO, tin oxide (NESA), gold, silver, platinum, copper etc.Wherein, indium zinc oxide alloy (IZO) can at room temperature form film, and amorphism is high and be difficult to be stripped from etc., so preferred especially.
The electrical sheet resistance of transparent electrode layer is preferably 1000 Ω/below the.800 Ω/ more preferably, and then preferred 500 Ω/.
Luminous in order to take out, preferably make luminous transmitance with respect to electrode greater than 10%.More preferably more than 30%, and then be preferably more than 50%.
Consider transmitance and resistance value, the thickness of transparent electrode layer is preferably 5nm～1000nm.
(7) other
Except above-mentioned each layer, for example also can form look converter section and/or colour filter on the top of transparent electrode layer.In this case, also can between look converter section and/or colour filter and transparent electrode layer, form the levelability film.By forming look converter section or colour filter, even the organic EL display (with reference to first and second execution modes) that is made of two kinds of EL element portions, panchromatic demonstration also becomes difficulty.
The look converter section have absorb organic EL portion luminous, send the more function of long wavelength's fluorescence, separately or the constituting of fluorescent material and transparent medium by fluorescent material.The look converter section is for the reduction of the contrast that prevents to be caused by outer light, also can and constitute with as described later colour filter combination.
As fluorescent material, can use organic fluorescence pigment, organic fluorescent pigment, metal complex pigment, inorganic phosphor etc.
In addition, as transparent medium, can use transparent resins such as inorganic transparent bodies such as glass or thermoplastic resin, heat-curing resin, light-cured resin.
Check colors converter section by the situation that fluorescent material and resin constitute, set forth its concrete structure.
As the organic fluorescence pigment, illuminant colour as required can use the organic fluorescence pigment of independent kind, also can use multiple organic fluorescence pigment.For example, blueness～glaucous exciting light is being converted under the situation of red light, the rhodamine that can use wavelength region may more than 600nm to have photoluminescence peak is a pigment.And then more preferably using wavelength region may at exciting light to have absorption band and bringing out to rhodamine is that the energy of pigment moves or resorbent fluorchrome.
The organic fluorescence pigment check colors mutually converter section with the containing ratio of the integral body of resin combination preferably in the scope of 0.01～1 weight %.If containing ratio is lower than 0.01 weight %, the look translation building block becomes and is difficult to fully absorb exciting light, and fluorescence intensity diminishes sometimes.In addition, if containing ratio is higher than 1 weight %, in the look translation building block, the distance between the organic fluorescence pigment molecular became near, sometimes because of the concentration delustring, and the fluorescence intensity step-down.
As inorganic phosphor, can enumerate the inorganic compounds such as metallic compound that absorb visible light and send the longer fluorescence of light that wavelength ratio absorbed.When micronized inorganic phosphor being scattered in material in the transparent resin medium,, for example also can modify microparticle surfaces with organic substances such as chain alkyl or phosphoric acid in order to improve the dispersiveness of particulate to resin as the look converter section.Particularly, can enumerate (a) and in metal oxide, mix the material of transition metal ions (to Y
2O
3, Gd
2O
3, ZnO, Y
3Al
5O
12, Zn
2SiO
4Deng the Eu that mixed in the metal oxide
2+, Eu
3+, Ce
3+, Tb
3+Deng material of transition metal ions etc.), (b) mixed in metal chalcogenide, and (Eu has mixed in metal chalcogenides such as ZnS, CdS, CdSe for the material of transition metal ions
2+, Eu
3+, Ce
3+, Tb
3+Deng the material of the transition metal ions that absorbs visible light etc.), (c) utilize semi-conductive band gap, absorb visible light and luminous particulate (showing as can be known CdS, CdSe, CdTe, ZnS, semiconductive particles such as ZnSe, InP in the document such as 2002-510866 communique the spy).
When the look converter section is made of fluorescent material, preferred mixing, dispersion maybe can be dissolved fluorescent material and resin, appropriate solvent, become fraction, utilize methods such as spin-coating method, rolling method, casting method to make this fraction film forming, then, the photolithograph method forms the pattern of the look translation building block that needs, and forms the pattern that needs with methods such as screen printings, forms the look converter section.
The thickness of look converter section is so long as absorb the luminous of organic EL fully and do not hinder the lighting function of fluorescence, just be not particularly limited, for example be preferably the interior value of scope of 10nm～1mm, the more preferably value in the scope of 0.5 μ m～1mm, the more preferably value in the scope of 1 μ m～100 μ m.
As the transparent resin that is used to disperse fluorescent material, can use non-gel-type resin or light-cured resin.In addition, transparent resin can use a kind of separately, and it is multiple also can to mix use.
In addition, in full-color display, forming, configured separate is rectangular look converter section.So as transparent resin, preferred use can be answered the photoresist of photolithograph method.
Colour filter is a light that needs wavelength through the light of launching from element, blocks other luminous film.
In display unit of the present invention, because in each EL element portion illuminant colour difference, so preferably use colour filter.
Check colors converter section and colour filter is not particularly limited, and can use known device.
Then, the manufacture method to organic EL display of the present invention describes.In the above-mentioned execution mode, comprise that with utilization it is that example describes that the method for wet etch method is made the organic EL display of the 3rd execution mode here.In addition, for other execution mode, also can make with this manufacture method the samely.In addition, the manufacture method of organic EL display is not limited by following method.
Fig. 5 and Fig. 6 are the figure that is illustrated on the substrate operation that forms light reflective conductive layer, first inorganic compound layer and second inorganic compound layer, and Fig. 7 is the figure of the formation operation of expression organic light emitting medium layer etc.In addition, the manufacture method of the substrate of Fig. 5 is the film formation process (operation of dry type) of carrying out each layer alternately and the example of etching work procedure (operation of wet type), and the manufacture method of the substrate of Fig. 6 is to be carried out to the example that carries out etching work procedure after the membrane process together.According to accompanying drawing, the manufacture method of organic EL display is described below.
In the manufacture method of the substrate of Fig. 5, on substrate 11, the material that forms light reflective conductive layer 12 is carried out sputter, after the system film (Fig. 5 (a)), utilize photolithography method etc. to be etched into the pattern (Fig. 5 (b)) of the shape that needs.
Then, the material that forms first inorganic compound layer 21 is being carried out sputter, after the system film (Fig. 5 (c)), with above-mentioned the same, utilize the otiose part of etching solution etching, on the light reflective conductive layer 12 of the second and the 3rd organic EL portion, form (Fig. 5 (d)).
As mentioned above,, select easy etched material by order according to light reflective conductive layer, first inorganic compound layer, second inorganic compound layer, can the preformed smooth reflective conductive layer 12 of not etching, form first inorganic compound layer 21.
And then, after becoming the material of second inorganic compound layer 31 by sputter and making film (Fig. 5 (e)), utilize the otiose part of etching solution etching, on first inorganic compound layer 21 of the 3rd organic EL portion, form second inorganic compound layer 31, obtain organic layer and form preceding substrate (Fig. 5 (f)).
In the manufacture method of the substrate of Fig. 6, continuous sputter forms the layer as light reflective conductive layer 12, first inorganic compound layer 21 and second inorganic compound layer 31 on substrate 11, and then forms resist film 41 (Fig. 6 (a)) on second inorganic compound layer 31.
Then, in resist film 41, only expose and peel off the part (Fig. 6 (b)) that becomes the clearance portion between each organic EL portion.Then, under strong relatively condition, carry out etch processes, all remove the layer (Fig. 6 (c)) that in clearance portion, exists.
Then, after only exposing and removing the resist film 41a in the place that becomes the first organic EL portion, under the condition of intermediate intensity, carry out etching, form the light reflective conductive layer 12 (Fig. 6 (d)) of the first organic EL portion.
Then, after only exposing and removing the resist film 41b in the place that becomes the second organic EL portion, under more weak condition, carry out etching, form the light reflective conductive layer 12 and first inorganic compound layer 21 (Fig. 6 (e)) of the second organic EL portion.
At last, by exposing, removing the resist film 41c in the place that becomes the 3rd organic EL portion, obtain organic layer and form preceding substrate (Fig. 6 (f)).
In the method, owing to be not mixed in the operation of dry type and the operation of wet type, thus the production capacity height, also manageable foreign matter.And then, can reduce the advantage of the quantity of photomask in addition.
In addition, in the organic EL portion of optical distance maximum, because it is big that the thickness that light reflective conductive layer and inorganic compound are laminated together becomes, so electrical short takes place between the subtend transparent electrode layer 15 of this marginal portion and formation in the back easily, for the effective rate of utilization that prevents to cause thus reduces, can dielectric film be set in the clearance portion between each organic EL portion, and make it cover the marginal portion of the inorganic compound layer of each organic EL portion.As the material of dielectric film, can use organic compounds such as inorganic compounds such as SiOx, SiNx, SiOxNy or acrylic acid series photoresist.
On the above-mentioned substrate that forms light reflective conductive layer 12 and each inorganic compound layer that obtains, can make film to organic light emitting medium layer 13 (Fig. 7 (a)), reflection layer 14 (Fig. 7 (b)) and transparent electrode layer 15 (Fig. 7 (c)) in order, make organic EL display 3.
Formation method to each layer of organic EL is not particularly limited, and infusion process, spin-coating method, casting method, the rod that can utilize known in the past sputtering method, vacuum vapour deposition, molecular ray vapour deposition method (MBE method) or be dissolved in the solution of solvent are coated with coating processs such as method, rolling method and form.
[embodiment]
Utilize embodiment that the present invention is carried out more specific description.
Utilize manufacturing process shown in Figure 5, make organic EL display shown in Figure 3.
On the thick glass substrate of 25mm * 75mm * 1.1mm,, form the light reflective conductive layer (with reference to Fig. 5 (a)) of thickness 300nm to the Cr spatter film forming.With this substrate of mixed liquor etching of cerous nitrate ammonium salt-aquae hydrogenii dioxidi, obtain having the substrate (with reference to Fig. 5 (b)) of the light reflective conductive layer that forms pattern.
This substrate that has the light reflective conductive layer is installed on the frame substrate of vacuum deposition apparatus,, forms first inorganic compound layer (with reference to Fig. 5 (c)) of 145nm the ITO spatter film forming.The hydrogen that the sputtering atmosphere of this moment adds 8% (dividing potential drop) of sputtering pressure carries out.Then, utilize oxalic acid aqueous solution (oxalic acid: 3.5wt%) carry out etching, obtain having the substrate (with reference to Fig. 5 (d)) of first inorganic compound layer that forms pattern.
Then, with the heat treatment 30 minutes in 230 ℃ heating furnace of this substrate, make after the ITO crystallization, substrate is installed on the frame substrate, to (contain zinc oxide: 10wt%) spatter film forming forms second inorganic compound layer (with reference to Fig. 5 (e)) of 45nm as the IZO of amorphism inorganic oxide.(oxalic acid: 3.5wt%) this substrate of etching obtains having the substrate (with reference to Fig. 5 (f)) of second inorganic compound layer that forms pattern to utilize oxalic acid aqueous solution.
Then, form the organic light emitting medium layer as described below.
Utilize vacuum vapour deposition, with the mode of light reflective conductive layer of covering above-mentioned formation etc., stacked N, N '-two (N, N '-diphenyl-4-aminophenyl)-N, N-diphenyl-4,4 '-diaminostilbene, 1 '-biphenyl film (following brief note is " a TPD232 film ") 35nm.This TPD232 film can be used as hole injection layer performance function.
Then, on this TPD232 film, forming thickness is 4,4 ' of 10nm-two [N-(1-naphthyl)-N-phenyl amino] biphenyl film (following brief note is " a NPD film ").This NPD film can be used as hole transporting layer performance function.
And then compound (H1) and the compound (B1) shown in following with 40: 1 weight ratio evaporation forms the film of thickness 5nm.This film can be used as orange light emitting layer performance function.
サ ェ ス ゲ ッ one corporate system) and Alq on this film, three (oxine) aluminium (following brief note be " Alq ") that forms thickness 5nm is as electron supplying layer, and then (the Li source:, the Alq of formation 5nm: the Li film is as electron injecting layer for two-dimentional evaporation Li.
[changing 13]
Then, at Alq: on the Li film, be 1: 9 evaporation 5nm metal A g and Mg with the ratio of film forming speed.This film can be used as reflection layer and plays a role.
And then, on reflection layer, make IZO film forming and thickness 100nm.This film can be used as transparent electrode layer performance function.
Through above-mentioned operation, make organic EL display (with reference to Fig. 3) with three kinds of organic EL portions (having different resonant structures).
Between the light reflective conductive layer of this organic EL display and transparent electrode layer, apply voltage 5.5V, measure the luminescent spectrum of each organic EL portion.
As a result, in the organic EL portion (organic EL portion 10 shown in Figure 3) of the optical distance the shortest (151nm) of resonant structure, maximum emission wavelength is 470nm, blue light-emitting.
Optical distance at resonant structure is that maximum emission wavelength is 550nm, green light in the organic EL portion (organic EL portion 20 shown in Figure 3) of intermediate length (433nm).
In the organic EL portion (organic EL portion 30 shown in Figure 3) of the optical distance the longest (522nm) of resonant structure, maximum emission wavelength is 620nm, glows.
Can confirm from above result: organic EL display of the present invention can be multicolor luminous, also can panchromaticly show.
Comparative example 1
In embodiment 1, except not forming first inorganic compound layer and second inorganic compound layer on as the Cr of light reflective conductive layer, with the embodiment 1 the same organic EL display of making.
As a result, as the Cr layer of light reflective conductive layer and as the Mg of reflection layer: the thickness between the Ag layer becomes 80nm (blooming: 151nm).Can obtain having the blue-light-emitting of maximum emission wavelength 470nm from this element.
The same with embodiment 1, make until the substrate (lower electrode substrate) (Fig. 5 (a)～(f)) that forms second inorganic compound layer.
In isopropyl alcohol, after this substrate of ultrasonic waves for cleaning 5 minutes, carry out the ozone clean of 30 minutes UV.Substrate after cleaning is installed on the frame substrate of vacuum deposition apparatus.In addition, in advance in the cooking-vessel (boat) of molybdenum system separately, put into following compound (HI) (following brief note is " HI film ") respectively as hole-injecting material, following compound (HT) (following brief note is " a HT film ") as hole transporting material, following compound (BH) as the main body of luminescent material, following compound (BD) as the blue-light-emitting dopant, following compound (GD) as the green emitting dopant, following compound (RD) as the emitting red light dopant, three (oxine) aluminium (Alq) as electron transport materials, LiF as the electronics injection material, Mg and Ag as reflection layer (negative electrode) material, and then inject the taking-up electrode of auxiliary material and negative electrode as the hole, the IZO target is installed in each sputter groove.
[changing 14]
At first, to cover the mode of lower electrode, it is that 1nm injects auxiliary layer as the hole that sputter IZO makes thickness.Then, play the HI film of hole injection layer effect with thickness 25nm evaporation.After the film forming of HI film, play the HT film of hole transporting layer effect with thickness 10nm evaporation.
After the film forming of HT film, as blue light-emitting layer, being total to evaporation compd B H and compd B D and making weight ratio with thickness 10nm is 10: 0.5.Then, as green light emitting layer, being total to evaporation compd B H and compound GD and making weight ratio with thickness 10nm is 10: 0.8.And then as red light emitting layer, being total to evaporation compd B H and compound R D and making weight ratio with thickness 20nm is 20: 0.5.
On this film, as electron supplying layer, with thickness 10nm evaporating Al q film.Then, as electron injecting layer, with thickness 1nm evaporation LiF, on this film, making thickness with film forming speed than 1: 9 evaporation Ag and Mg is 10nm, as reflection layer (negative electrode).And then as transparent electrode layer, sputter forms the IZO film of 90nm, makes the organic EL display that forms 3 layers of luminescent layer.
In addition, as the light reflective conductive layer with as the Mg of reflection layer: the thickness between the Ag layer becomes 85nm (blooming: 160nm).
Between the light reflective conductive layer of this organic EL display and transparency electrode, apply 7.2V voltage, measure the luminescent spectrum of each organic EL portion.
As a result, in the organic EL portion (organic EL portion 10 shown in Figure 3) of the optical distance the shortest (160nm) of resonant structure, show that maximum emission wavelength is that 454nm, luminous efficiency are the blue-light-emitting of 4.9cd/A, colourity (0.21,0.26).
Optical distance at resonant structure is in the organic EL portion (organic EL portion 20 shown in Figure 3) of intermediate length (442nm), shows that maximum emission wavelength is that 520nm, luminous efficiency are the green emitting of 6.2cd/A, colourity (0.23,0.48).
In the organic EL portion (organic EL portion 30 shown in Figure 3) of the optical distance the longest (531nm) of resonant structure, show that maximum emission wavelength is that 588nm, luminous efficiency are that the reddish violet of 3.6cd/A, colourity (0.41,0.32) is luminous.
Embodiment 3
The making of the organic substrate of organic EL
Till the formation from the light reflective conductive layer to organic light emitting medium layer, reflection layer, transparency electrode, the same with embodiment 2.
Then, to cover all modes of organic EL illuminating part, utilize low temperature CVD, as sealant, on the transparent electrode layer of organic EL, form SiOxNy (O/O+N=50%:Atomic ratio), become the organic EL substrate as transparent inorganic film with the thickness of 300nm.
The making of filter substrate
On the thick glass substrate of 25mm * 75mm * 1.1mm, form the light shield layer pattern.At this,, distinguish the chromium oxide of stacked 50nm, the chromium of 300nm in turn by sputter as light shield layer.
Then, on light shield layer, make eurymeric resist (HPR204: the ォ of Fuji one リ Application system) film forming by spin coating.Then, by photomask this resist film that under ultraviolet ray, exposes.Then, develop, under 130 ℃, cure (bake) with the developer solution of TMAH (tetramethylammonium hydroxide).Then, utilize the chromium etchant that constitutes by ammonium ceric nitrate/high chloro acid solution, chromium layer that etching is exposed and chromium oxide layer part.Then, in order to monoethanolamine be the stripper (N303: long rapids industry system) remove resist, obtain the light shield layer pattern of the wide lattice-shaped of 30 μ m of main component.
As the material of blueness, be spun on the supporting substrate V259 (chemical company of Nippon Steel system) and film forming with the color-filter layer pattern of (B).Then,, make itself and light shield layer position consistency, use ultraviolet exposure by photomask.Then, after the development of 2% aqueous sodium carbonate, under 200 ℃, cure, form the color-filter layer pattern (thickness 1.5 μ m) of blue usefulness.
Then, as the material of green with the color-filter layer pattern of (G), spin coating pigment is green color filter material (CG-8510L, Fujiphoto ァ one チ system), will blueness with in the photomask that the uses 100 μ m spacings that stagger from the position of the color-filter layer pattern of blueness usefulness, by this photomask, use ultraviolet exposure.Then, under 200 ℃, cure, form the color-filter layer pattern (thickness 1.0 μ m) of green usefulness.
Then, as the material of redness with the color-filter layer pattern of (R), spin coating pigment is red color filter material (CRY-S840B, Fujiphoto ァ one チ system), will blueness with in the photomask that the uses 200 μ m spacings that stagger from the position of the color-filter layer pattern of blueness usefulness, by this photomask, use ultraviolet exposure.Then, under 200 ℃, cure, form red color filter layer pattern (thickness 1.2 μ m).Like this, make the filter substrate that constitutes by 3 looks.
On the filter substrate of making of said method, use spinner to apply aqueous silicone rubber (Toshiba's silicone corporate system, XE14-128), the above-mentioned organic EL substrate and make it consistent with the contraposition souvenir of fitting is thereon made the organic EL display that has formed colour filter.Become the structure of glass substrate/colour filter/silicone rubber/transparent inorganic film/organic EL.
Between the light reflective conductive layer of this organic EL display and transparency electrode, apply 7.2V voltage, measure the luminescent spectrum of each organic EL portion.
As a result, in the organic EL portion (organic EL portion 10 shown in Figure 3) of the optical distance the shortest (160nm) of resonant structure, show that maximum emission wavelength is that 453nm, luminous efficiency are the blue-light-emitting of 0.98cd/A, colourity (0.13,0.09).
Optical distance at resonant structure is in the organic EL portion (organic EL portion 20 shown in Figure 3) of intermediate length (442nm), shows that maximum emission wavelength is that 520nm, luminous efficiency are the green emitting of 4.4cd/A, colourity (0.20,0.63).
In the organic EL portion (organic EL portion 30 shown in Figure 3) of the optical distance the longest (531nm) of resonant structure, show that maximum emission wavelength is that 599nm, luminous efficiency are the emitting red light of 1.36cd/A, colourity (0.63,0.36).
Industrial utilizability
Organic electroluminescent display unit of the present invention, can be used for civilian TV, giant display, Mobile phone is with the display frame of the various display unit such as display frame.
Claims (15)
1. organic electroluminescence display device and method of manufacturing same wherein, has:
Substrate and
On the same one side of described substrate and establish, the first organic electroluminescent device portion and the second organic electroluminescent device portion;
The described first organic electroluminescent device portion is to comprise light reflective conductive layer, organic light emitting medium layer and transparent electrode layer and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer in order at least;
The described second organic electroluminescent device portion is to comprise light reflective conductive layer, first inorganic compound layer, organic light emitting medium layer and transparent electrode layer and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer in order at least;
The luminescent spectrum of the light that sends from the described first organic electroluminescent device portion is different with the luminescent spectrum of the light that sends from the described second organic electroluminescent device portion.
2. organic electroluminescence display device and method of manufacturing same wherein, has:
Substrate and
On the same one side of described substrate and establish, the first organic electroluminescent device portion and the second organic electroluminescent device portion;
The described first organic electroluminescent device portion is to comprise light reflective conductive layer, first inorganic compound layer, organic light emitting medium layer and transparent electrode layer and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer in order at least;
The described second organic electroluminescent device portion is to comprise light reflective conductive layer, first inorganic compound layer, second inorganic compound layer, organic light emitting medium layer and transparent electrode layer and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer in order at least;
The luminescent spectrum of the light that sends from the described first organic electroluminescent device portion is different with the luminescent spectrum of the light that sends from the described second organic electroluminescent device portion.
3. organic electroluminescence display device and method of manufacturing same wherein, has:
Substrate and
On the same one side of described substrate and establish, the first organic electroluminescent device portion, the second organic electroluminescent device portion and the 3rd organic electroluminescent device portion;
The described first organic electroluminescent device portion is to comprise light reflective conductive layer, organic light emitting medium layer and transparent electrode layer and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer in order at least;
The described second organic electroluminescent device portion is to comprise light reflective conductive layer, first inorganic compound layer, organic light emitting medium layer and transparent electrode layer and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer in order at least;
Described the 3rd organic electroluminescent device portion is to comprise light reflective conductive layer, first inorganic compound layer, second inorganic compound layer, organic light emitting medium layer and transparent electrode layer and the element that has reflection layer in the inside or the outside of organic light emitting medium layer or transparent electrode layer in order at least;
The luminescent spectrum of the light that sends from described first, second and the 3rd organic electroluminescent device portion differs from one another.
4. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
One deck at least of described first inorganic compound or second inorganic compound layer is to have implemented the inorganic compound layer that crystallization is handled.
5. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Described first the inorganic compound layer and/or second inorganic compound layer contain inorganic oxide.
6. organic electroluminescence display device and method of manufacturing same according to claim 4, wherein,
Described first inorganic compound layer and second inorganic compound layer contain inorganic oxide,
The degree of crystallinity of described first inorganic compound layer is bigger than the degree of crystallinity of described second inorganic compound layer.
7. organic electroluminescence display device and method of manufacturing same according to claim 6, wherein,
Described first inorganic compound layer is a crystalloid, and described second inorganic compound layer is a noncrystalline.
8. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Described first inorganic compound layer and/or second inorganic compound layer contain the oxide of the element of selecting from In, Sn, Zn, Ce, Sm, Pr, Nb, Tb, Cd, Ga, Al, Mo and W.
9. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Described first inorganic compound layer and/or second inorganic compound layer contain the oxide of the element of selecting from In, Sn and Zn.
10. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Described smooth reflective conductive layer is the metal of selecting from the group that Al, Ag, Au, Pt, Cu, Mg, Cr, Mo, W, Ta, Nb, Li, Mn, Ca, Yb, Ti, Ir, Be, Hf, Eu, Sr, Ba, Cs, Na and K constitute or contains from the alloy of the metal more than at least a kind of this group selection.
11. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Described reflection layer contains one or more the metallic element of selecting from Al, Ag, Au, Pt, Cu, Mg, Cr, Mo, W, Ta, Nb, Li, Mn, Ca, Yb, Ti, Ir, Be, Hf, Eu, Sr, Ba, Cs, Na and K.
12. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Also has the look converter section.
13. according to any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Also has colour filter.
14. organic electroluminescence display device and method of manufacturing same according to claim 12, wherein,
Described look converter section is a fluorescence transferring film.
15. the manufacture method of any described organic electroluminescence display device and method of manufacturing same in the claim 1～3, wherein,
Comprise the operation that forms described first inorganic compound layer and/or second inorganic compound layer with wet etch method.
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| JP2004062774 | 2004-03-05 | ||
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376894A (en) * | 2010-08-23 | 2012-03-14 | 三星移动显示器株式会社 | Organic light emitting diode display |
| CN105247702A (en) * | 2013-09-30 | 2016-01-13 | 株式会社Lg化学 | Organic electronic device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5722453B2 (en) * | 2011-09-26 | 2015-05-20 | シャープ株式会社 | Manufacturing method of display device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2351840A (en) * | 1999-06-02 | 2001-01-10 | Seiko Epson Corp | Multicolour light emitting devices. |
| JP2002100483A (en) * | 2000-09-22 | 2002-04-05 | Stanley Electric Co Ltd | Organic light-emitting element |
| JP2003234186A (en) * | 2001-12-06 | 2003-08-22 | Sony Corp | Display device, and manufacturing method of the same |
| JP3783937B2 (en) * | 2002-03-18 | 2006-06-07 | 富士電機ホールディングス株式会社 | Organic EL device |
| JP2004055461A (en) * | 2002-07-23 | 2004-02-19 | Seiko Epson Corp | Light emitting device and its manufacturing method as well as electronic equipment |
-
2005
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376894A (en) * | 2010-08-23 | 2012-03-14 | 三星移动显示器株式会社 | Organic light emitting diode display |
| CN102376894B (en) * | 2010-08-23 | 2016-05-11 | 三星显示有限公司 | Organic light emitting diode display |
| CN105247702A (en) * | 2013-09-30 | 2016-01-13 | 株式会社Lg化学 | Organic electronic device |
| US9755188B2 (en) | 2013-09-30 | 2017-09-05 | Lg Display Co., Ltd. | Organic electronic device |
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| CN100484356C (en) | 2009-04-29 |
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