CN1910756B - 晶体管制造 - Google Patents
晶体管制造 Download PDFInfo
- Publication number
- CN1910756B CN1910756B CN2005800029333A CN200580002933A CN1910756B CN 1910756 B CN1910756 B CN 1910756B CN 2005800029333 A CN2005800029333 A CN 2005800029333A CN 200580002933 A CN200580002933 A CN 200580002933A CN 1910756 B CN1910756 B CN 1910756B
- Authority
- CN
- China
- Prior art keywords
- layer
- source
- grid
- semiconductor layer
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 24
- 125000006850 spacer group Chemical group 0.000 claims abstract description 20
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 238000005286 illumination Methods 0.000 claims abstract description 7
- 238000005036 potential barrier Methods 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000012797 qualification Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0401579.8 | 2004-01-24 | ||
GBGB0401579.8A GB0401579D0 (en) | 2004-01-24 | 2004-01-24 | Transistor manufacture |
PCT/IB2005/050249 WO2005071753A1 (en) | 2004-01-24 | 2005-01-21 | Transistor manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1910756A CN1910756A (zh) | 2007-02-07 |
CN1910756B true CN1910756B (zh) | 2010-09-08 |
Family
ID=31971406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800029333A Active CN1910756B (zh) | 2004-01-24 | 2005-01-21 | 晶体管制造 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7569435B2 (zh) |
EP (1) | EP1711965B1 (zh) |
JP (1) | JP4995577B2 (zh) |
KR (1) | KR20070007046A (zh) |
CN (1) | CN1910756B (zh) |
GB (1) | GB0401579D0 (zh) |
TW (1) | TW200535936A (zh) |
WO (1) | WO2005071753A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008027593A2 (en) * | 2006-09-01 | 2008-03-06 | Bae Systems Information And Electronic Systems Integration Inc. | Improved structure and method for fabrication of field effect transistor gates with or without field plates |
KR100885783B1 (ko) | 2007-01-23 | 2009-02-26 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 동작 방법 |
JP2009076866A (ja) * | 2007-08-31 | 2009-04-09 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオード |
CN102130009B (zh) * | 2010-12-01 | 2012-12-05 | 北京大学深圳研究生院 | 一种晶体管的制造方法 |
TWI511200B (zh) * | 2013-07-25 | 2015-12-01 | Ye Xin Technology Consulting Co Ltd | 顯示面板製作方法 |
CN110197851A (zh) * | 2018-02-27 | 2019-09-03 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板和电子装置 |
US11088078B2 (en) * | 2019-05-22 | 2021-08-10 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3943552A (en) * | 1973-06-26 | 1976-03-09 | U.S. Philips Corporation | Semiconductor devices |
US5441905A (en) * | 1993-04-29 | 1995-08-15 | Industrial Technology Research Institute | Process of making self-aligned amorphous-silicon thin film transistors |
US5801398A (en) * | 1994-10-18 | 1998-09-01 | Frontec Corporation | Field effect transistor |
CN1267837A (zh) * | 1999-03-16 | 2000-09-27 | 松下电器产业株式会社 | 有源元件阵列衬底的制造工艺 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3562124A (en) * | 1968-08-02 | 1971-02-09 | Hooker Chemical Corp | Composition for corrosion protection |
US3998779A (en) * | 1973-05-21 | 1976-12-21 | Chromalloy American Corporation | Coating method and composition for the sacrificial protection of metal substrates |
US5175056A (en) * | 1990-06-08 | 1992-12-29 | Potters Industries, Inc. | Galvanically compatible conductive filler |
KR940007451B1 (ko) * | 1991-09-06 | 1994-08-18 | 주식회사 금성사 | 박막트랜지스터 제조방법 |
GB9311129D0 (en) * | 1993-05-28 | 1993-07-14 | Philips Electronics Uk Ltd | Electronic devices with-film circuit elements forming a sampling circuit |
US5700398A (en) * | 1994-12-14 | 1997-12-23 | International Business Machines Corporation | Composition containing a polymer and conductive filler and use thereof |
US5968417A (en) * | 1997-03-03 | 1999-10-19 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Conducting compositions of matter |
US6627117B2 (en) * | 1998-06-09 | 2003-09-30 | Geotech Chemical Company, Llc | Method for applying a coating that acts as an electrolytic barrier and a cathodic corrosion prevention system |
US6562201B2 (en) * | 2001-06-08 | 2003-05-13 | Applied Semiconductor, Inc. | Semiconductive polymeric system, devices incorporating the same, and its use in controlling corrosion |
US6402933B1 (en) * | 2001-06-08 | 2002-06-11 | Applied Semiconductor, Inc. | Method and system of preventing corrosion of conductive structures |
JP2003273397A (ja) * | 2002-03-19 | 2003-09-26 | Fuji Xerox Co Ltd | 半導体発光素子、半導体複合素子、及び半導体発光素子の製造方法 |
US6841434B2 (en) * | 2002-03-26 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
-
2004
- 2004-01-24 GB GBGB0401579.8A patent/GB0401579D0/en not_active Ceased
-
2005
- 2005-01-21 WO PCT/IB2005/050249 patent/WO2005071753A1/en active Application Filing
- 2005-01-21 JP JP2006550430A patent/JP4995577B2/ja active Active
- 2005-01-21 US US10/597,252 patent/US7569435B2/en active Active
- 2005-01-21 CN CN2005800029333A patent/CN1910756B/zh active Active
- 2005-01-21 TW TW094101864A patent/TW200535936A/zh unknown
- 2005-01-21 KR KR1020067014528A patent/KR20070007046A/ko not_active Application Discontinuation
- 2005-01-21 EP EP05702743.5A patent/EP1711965B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3943552A (en) * | 1973-06-26 | 1976-03-09 | U.S. Philips Corporation | Semiconductor devices |
US5441905A (en) * | 1993-04-29 | 1995-08-15 | Industrial Technology Research Institute | Process of making self-aligned amorphous-silicon thin film transistors |
US5801398A (en) * | 1994-10-18 | 1998-09-01 | Frontec Corporation | Field effect transistor |
CN1267837A (zh) * | 1999-03-16 | 2000-09-27 | 松下电器产业株式会社 | 有源元件阵列衬底的制造工艺 |
Non-Patent Citations (1)
Title |
---|
J.M.Shannon and E.G.Gerstner.Source-Gated Thin-Film Transistor.IEEE ELECTRON DEVICE LETTERS24 6.2003,24(6),405-407. * |
Also Published As
Publication number | Publication date |
---|---|
EP1711965A1 (en) | 2006-10-18 |
US7569435B2 (en) | 2009-08-04 |
EP1711965B1 (en) | 2013-04-24 |
TW200535936A (en) | 2005-11-01 |
WO2005071753A1 (en) | 2005-08-04 |
GB0401579D0 (en) | 2004-02-25 |
JP2007519251A (ja) | 2007-07-12 |
KR20070007046A (ko) | 2007-01-12 |
JP4995577B2 (ja) | 2012-08-08 |
US20080224184A1 (en) | 2008-09-18 |
CN1910756A (zh) | 2007-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101621635B1 (ko) | 어레이 기판과 그 제조 방법 및 디스플레이 디바이스 | |
CN1910756B (zh) | 晶体管制造 | |
US20110012125A1 (en) | Thin film transistor and active matrix display | |
KR102080732B1 (ko) | 이중 게이트 구조를 기반으로 한 저온 폴리 실리콘 박막 트랜지스터 및 그 제조 방법 | |
KR100796608B1 (ko) | 박막 트랜지스터 어레이 기판의 제조방법 | |
KR100679917B1 (ko) | 박막 트랜지스터 및 그 제조방법 | |
US5658808A (en) | Method of fabricating polycrystalline silicon thin-film transistor having symmetrical lateral resistors | |
CN109037150B (zh) | 金属氧化物半导体薄膜晶体管阵列基板及其制作方法 | |
KR20000032041A (ko) | 박막 트랜지스터 액정 표시 장치의 제조 방법 | |
KR100307457B1 (ko) | 박막 트랜지스터의 제조 방법 | |
US20240079471A1 (en) | Mosfet device structure with air-gaps in spacer and methods for forming the same | |
KR100272272B1 (ko) | 박막 트랜지스터 및 그의 제조방법 | |
KR100268895B1 (ko) | 박막트랜지스터 및 이의 제조방법 | |
US20120061802A1 (en) | Bipolar junction transistor | |
WO2021041060A1 (en) | Hydrogen trap layer for display device and the same | |
CN104347639A (zh) | 薄膜晶体管基板及其制作方法 | |
JP2005311037A (ja) | 半導体装置およびその製造方法 | |
JP3420301B2 (ja) | 薄膜トランジスタの製造方法 | |
US7625787B2 (en) | Thin silicon-on-insulator high voltage transistor with body ground | |
JP3197667B2 (ja) | アキュムレーション型多結晶シリコン薄膜トランジスタ | |
KR100370451B1 (ko) | 단순공정에의한비정질실리콘박막트랜지스터와액정표시소자(lcd)제조방법 | |
KR100222898B1 (ko) | 박막 트랜지스터 및 그의 제조방법 | |
JP2746500B2 (ja) | Mosトランジスタ | |
KR100252754B1 (ko) | 박막트랜지스터 및 그 제조방법 | |
JP2011109135A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: The city of Eindhoven in Holland Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Holland Ian Deho Finn Patentee before: Koninklijke Philips Electronics N.V. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180619 Address after: Beijing City, Haidian District Qinghe Street No. 68 Huarun colorful city shopping center two 9 floor room 01 Patentee after: BEIJING XIAOMI MOBILE SOFTWARE Co.,Ltd. Address before: The city of Eindhoven in Holland Patentee before: KONINKLIJKE PHILIPS N.V. |