CN1908788A - Electro-optical device and electronic apparatus - Google Patents
Electro-optical device and electronic apparatus Download PDFInfo
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- CN1908788A CN1908788A CN 200610108329 CN200610108329A CN1908788A CN 1908788 A CN1908788 A CN 1908788A CN 200610108329 CN200610108329 CN 200610108329 CN 200610108329 A CN200610108329 A CN 200610108329A CN 1908788 A CN1908788 A CN 1908788A
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Abstract
The invention provides an electro-optical device having a structure that can protect active elements from static electricity, and preferably achieving higher efficiency of manufacturing processes and improvement in the yield. The electro-optical device includes a display region (110) comprising a plurality of pixels (19) arranged in a matrix, and switching elements each provided corresponding to one of the above pixels (19), wherein a first sealed wiring portion (91) surrounding at least three sides of the display region (110) and a second sealed wiring portion (92) surrounding the first sealed wiring portion (91) are formed on a TFT array substrate (10).
Description
Technical field
The present invention relates to electro-optical device and electronic equipment.
Background technology
In the liquid-crystal apparatus (electro-optical device) of active matrix mode, on each pixel electrode, connect on-off element, come each pixel electrode of switch by this on-off element.As on-off element, for example, can use thin film transistor (TFT) (TFT).The structure of thin film transistor (TFT) and work, MOS (Metal-oxide-semicondutor) transistor with monocrystalline silicon is identical basically.As the structure of the thin film transistor (TFT) that has adopted amorphous silicon (a-Si), though known several structure, general use gate electrode is in bottom gate (bottom gate) structure (reverse interleaved structure) under the amorphous silicon film.
In the manufacturing of thin film transistor (TFT), importantly reduce the worker ordinal number, and, guarantee high yield rate.And, thin film transistor (TFT) protected effectively to avoid the puncture this point that causes because of the static that in the manufacture process of active-matrix substrate, takes place, also be important.Thin film transistor (TFT) is protected in order to avoid the technology of electrostatic breakdown for example, is recorded in following patent documentation 1.
No. 2744138 communique of [patent documentation 1] special permission
According to the technology that is recorded in above-mentioned patent documentation 1, can think and to protect in order to avoid cause electrostatic breakdown in the manufacturing process thin film transistor (TFT).But static not only in the manufacturing process of electro-optical device, also takes place in the operation of the installation toward electronic equipment after manufacturing, carrying, packing etc., also takes place when the use of electronic equipment.Thereby, aspect the reliability of guaranteeing electro-optical device,, when it uses, also need to avoid protecting effectively statically not only in manufacturing process.
Summary of the invention
The present invention makes in view of above-mentioned prior art problems point, and its purpose is: provide to possess the structure that can avoid protecting statically active component well, preferably can also realize the validation of manufacturing process and the electro-optical device of raising yield rate.
Electro-optical device of the present invention, in order to address the above problem, possess: make a plurality of pixels be arranged in rectangular viewing area, with corresponding to the set on-off element of aforementioned each pixel, it is characterized in that, on device substrate, possess: the 1st shield wiring portion that surrounds at least 3 limits of aforementioned viewing area; The 2nd shield wiring portion with the 1st shield wiring portion of encirclement.
Constitute according to this, because make the on-off element of aforementioned viewing area obtain duplicate protection, so the electro-optical device that possesses excellent antistatic can be provided by above-mentioned the 1st shield wiring portion and the 2nd shield wiring portion.
In electro-optical device of the present invention, preferred: at least one side of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion is and surrounds the rectangular-shaped of aforementioned viewing area and form.If be configured, can make antistatic behaviour better with so surrounding the viewing area.
In electro-optical device of the present invention, can constitute: aforementioned the 1st shield wiring portion and the 2nd shield wiring portion, and stride the formed common electrode of aforementioned a plurality of pixel and be electrically connected.If, can constitute the electro-optical device that can make surge be released to the common electrode power supply for so constituting.
In electro-optical device of the present invention, can constitute: on the aforementioned components substrate, possess and stride the common electrode wiring that the formed common electrode of aforementioned a plurality of pixel is electrically connected, this common electrode wiring, the 3rd shield wiring portion at least 3 limits of aforementioned viewing area is surrounded in formation.If for so constituting, because heavily surround the viewing area, so can access more excellent antistatic behaviour to small part ground 3.
In electro-optical device of the present invention, can also constitute: the aforementioned switches element, for possessing: be formed at the gate electrode on the aforementioned components substrate, the thin film transistor (TFT) of semiconductor layer by gate insulating film and this gate electrode subtend and the source/drain electrode that is electrically connected with this semiconductor layer; Either party of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion adopts same material to form with aforementioned source/drain electrode at identical layer.If it is, can form shield wiring portion simultaneously with same operation, favourable at the point of making efficient and fabrication yield with the pixel of viewing area for so constituting.
In electro-optical device of the present invention, can also constitute: either party of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion, adopt same material to form with aforementioned gate electrode at identical layer.In this case, also can form shield wiring portion simultaneously with same operation with the pixel of viewing area, favourable at the point of making efficient and fabrication yield.
In electro-optical device of the present invention, can also constitute: possess the pixel electrode that is electrically connected with the aforementioned switches element by aforementioned source/drain electrode; Either party of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion adopts same material to form with aforementioned pixel electrode at identical layer.In this case, also can form shield wiring portion simultaneously with same operation with the pixel of viewing area, favourable at the point of making efficient and fabrication yield.
In electro-optical device of the present invention, can also constitute: possess the pixel electrode that is electrically connected with the aforementioned switches element by aforementioned source/drain electrode; By adopting the formed connecting elements of same material at identical layer, make at least 2 of aforementioned the 1st～the 3rd shield wiring portion to be electrically connected mutually with aforementioned pixel electrode.If for so constituting,, also can easily be connected, can easily form the path that emits surge by Wiring member with the pixel electrode identical layer even then form shield wiring portion at wiring layer inequality.
In electro-optical device of the present invention, preferably constitute: on the aforementioned components substrate, form many data lines and the multi-strip scanning line intersect mutually and to extend, aforementioned pixel is set corresponding to the cross part of aforementioned data line and sweep trace; Aforementioned the 1st shield wiring portion or the 2nd shield wiring portion and aforementioned sweep trace or aforementioned data line, by at least more than or equal 1 electrostatic discharge protective circuit and be electrically connected.If for so constituting, can protect on-off element, can further improve antistatic behaviour by electrostatic discharge protective circuit.
In electro-optical device of the present invention, can constitute: aforementioned electrostatic discharge protective circuit have possessed with aforementioned thin film transistor (TFT) at the MOS of the formed semiconductor layer of identical layer diode.And, can also constitute: make the gate electrode of aforementioned thin film transistor (TFT) and the 1MOS diode of drain electrode short circuit oppositely are connected mutually with the 2MOS diode.If be these formations, then can form electrostatic discharge protective circuit simultaneously with same operation with pixel, can be for making the high electro-optical device of efficient.
In electro-optical device of the present invention, be preferably: the source electrode of aforementioned 1MOS diode and gate electrode planarity ground is overlapping and dispose, and the MOS diode of the capacitive coupling work type of the overlapping and configuration in the source electrode of aforementioned 2MOS diode and gate electrode part planarity ground.If, can just make holding circuit work from the commitment of manufacturing process for so constituting, can more effectively prevent the damage of the on-off element in the manufacturing process, can improve fabrication yield.
In electro-optical device of the present invention, preferred: the MOS diode of aforementioned capacitive coupling work type is electrically connected the linear identical layer that is formed in of aforementioned shield wiring portion and aforementioned data with aforementioned shield wiring portion.By for so constituting, can after forming data line, and then just make electrostatic discharge protective circuit work, can more effectively prevent the damage of the on-off element of manufacturing process, can improve fabrication yield.
Electronic equipment of the present invention is characterized in that: the electro-optical device that possesses previous record.Constitute according to this, can avoid statically the circuit of protection switch element well etc., the electronic equipment of the display part that has possessed high reliability can be provided by shield wiring portion.
Description of drawings
Fig. 1 is the figure that the integral body of the liquid-crystal apparatus of expression the 1st embodiment constitutes.
Fig. 2 is the figure that the summary circuit of the identical liquid-crystal apparatus of expression constitutes.
Fig. 3 is the detailed figure that the circuit of the identical liquid-crystal apparatus of expression constitutes.
Fig. 4 is the figure that the pixel of expression liquid-crystal apparatus constitutes.
Fig. 5 is the figure of expression along the cross-section structure of the D-D ' line of Fig. 4.
Fig. 6 is the figure of a configuration example of expression electrostatic discharge protective circuit.
Fig. 7 is other the figure of configuration example of expression electrostatic discharge protective circuit.
Fig. 8 is the figure that the summary circuit of the liquid-crystal apparatus of expression the 2nd embodiment constitutes.
Fig. 9 is the three-dimensional composition figure of an example of expression electronic equipment.
Symbol description
100 liquid-crystal apparatus (electro-optical device), 10TFT array base palte (device substrate), 20 subtend substrates, 50 liquid crystal; 110 viewing areas, 9 pixel electrodes, 16 data lines; the 18a sweep trace, 19 pixels, 33 semiconductor layers; 34 source electrodes, 35 drain electrodes, 60TFT (on-off element); 71～74 electrostatic discharge protective circuits, 71a 1MOS diode, 71b 2MOS diode; 91,191 the 1st shield wiring portions, 92,192 the 2nd shield wiring portions, 193 the 3rd shield wiring portions
Embodiment
The 1st embodiment
Fig. 1 is the whole pie graph for the liquid-crystal apparatus 100 of 1 embodiment of electro-optical device of the present invention, (a) is that the plane constitutes, and (b) is the figure along the cross-section structure of the H-H ' line of (a).
As shown in FIG. 1, liquid-crystal apparatus 100, possess by the plane and see the fitted formation of tft array substrate (device substrate) 10 and subtend substrate 20 of the encapsulant 52 of essentially rectangular frame shape, be held on the liquid crystal (electro-optical substance) 50 between the aforementioned two substrates 10,20, be sealing between aforesaid base plate by encapsulant 52.
In the area inside of encapsulant 52, form the photomask (peripheral separating member) 53 that constitutes by the light-proofness material rectangular box-likely.Peripheral circuit area in the outside of encapsulant 52 sets data line drive circuit 101 and mounting terminal 102 along a limit of tft array substrate 10, two neighbours of data line drive circuit 101 scan line drive circuit 104,104 is set respectively on this limit.
In the inner face side (liquid crystal 50 sides) of tft array substrate 10, arrange and form a plurality of pixel electrodes 9, cover pixel electrode 9 and form the illustrated alignment films of omission.In the inner face side of subtend substrate 20, form the whole planar common electrode 21 in plane.Cover common electrode 21 and form the illustrated alignment films of omission.
Fig. 2 is the schematic circuit diagram of the electricity formation of expression tft array substrate 10.Fig. 3 is among the schematic circuit diagram of Fig. 2, to illustrating the circuit diagram that upper left is represented in more detail.
In the plane domain of tft array substrate 10, form the viewing area 110 that the essentially rectangular shape is seen on the plane, in the viewing area 110, the plane is set sees and be arranged in rectangular a plurality of pixels 19.In viewing area 110, form many data lines 16 and the multi-strip scanning line 18a that extend from the outside of the same area, near the cross part of data line 16 and sweep trace 18a, these data lines 16 and sweep trace 18a and aforementioned pixel 19 are electrically connected.
At this, as shown in FIG. 3, the pixel 19 in being formed at viewing area 110 is provided with TFT60, with the pixel electrode 9 that is connected with the electric leakage of TFT60.Supply with the data line 16 of picture signal, be electrically connected with the source of TFT60, sweep trace 18a is electrically connected with the grid of TFT60.
Under above-mentioned formation, each pixel 19, the sweep signal of being supplied with by making because by sweep trace 18a to the TFT60 of on-off element only conducting certain during, will be written to pixel electrode 9 with predetermined timing from the picture signal that data line 16 is supplied with.
Be written to the picture signal of the predetermined level of liquid crystal by pixel electrode 9, at pixel electrode 9 and carry out with it by liquid crystal 50 being held between the common electrode 21 of subtend certain during.Then, to the voltage level that applies corresponding to this and the orientation of the elements collection of liquid crystal, situation that order changes is utilized and light is modulated, can carrying out arbitrarily, gray shade scale shows.
And in each pixel, leak, also can and be formed at the liquid crystal capacitance extra storage electric capacity in parallel between pixel electrode 9 and the common electrode 21 in order to prevent the picture signal that is written to liquid crystal.Under this situation, become the formation that on tft array substrate 10, is formed with the electric capacity line that extends with sweep trace 18a almost parallel ground.
Turn back to Fig. 2,, extend to the outside (diagram downside) of viewing area 110 and be electrically connected with data line drive circuit 101 with the data line 16 that each pixel 19 is electrically connected.Another of data line 16 is distolateral, respectively with corresponding electrostatic discharge protective circuit 72 electrical connections.Each electrostatic discharge protective circuit 72 is electrically connected with 2 electrostatic discharge protective circuits 71 by connecting wiring 83,82.And then each electrostatic discharge protective circuit 71 is electrically connected with common electrode wiring 90 by connecting wiring 81.
With the sweep trace 18a that each pixel 19 is electrically connected, extend to the outside (diagram right side) of viewing area 110 respectively, be electrically connected with scan line drive circuit 104.Another of sweep trace 18a is distolateral, and the outside (diagram left side) that extends to viewing area 110 is electrically connected with electrostatic discharge protective circuit 74 respectively.Each electrostatic discharge protective circuit 74 is electrically connected with 2 electrostatic discharge protective circuits 73 by connecting wiring 86,85, and 2 electrostatic discharge protective circuits 73 are electrically connected with common electrode wiring 90 by connecting wiring 84 respectively.
The 1st shield wiring portion 91 that 4 Wiring member 18c～18f that setting is extended by encirclement 110 ground, viewing area constitute.Wiring member 18c extends between the electrostatic discharge protective circuit of arranging along the orientation of data line 16 72 and viewing area 110 on the diagram left and right directions.Wiring member 18d extends between the electrostatic discharge protective circuit of arranging along the orientation of sweep trace 18a 74 and connecting wiring 85 on the diagram above-below direction.Wiring member 18e extends to the diagram right from the diagram lower end of Wiring member 18d, and the limit end of 110 diagram downside extends along the viewing area.Wiring member 18f extends along the diagram above-below direction and to extend from viewing area 110 and the sweep trace 18a that is connected with scan line drive circuit 104 and along between the Wiring member 90a of the diagram right-hand end extension of tft array substrate 10.
The diagram left end of Wiring member 18c and the diagram of Wiring member 18d upper end are electrically connected, and are electrically connected with connecting wiring 84 by connecting elements 9b; The diagram right-hand member of Wiring member 18c and the diagram of Wiring member 18f upper end are electrically connected, and are electrically connected with common electrode wiring 90 by connecting elements 9a.
Thereby above-mentioned Wiring member 18c～18f is electrically connected mutually, and is electrically connected with common electrode wiring 90 by connecting elements 9a, 9b.
In the present embodiment, above-mentioned Wiring member 18c～18f is to adopt the formed Wiring member of same material with sweep trace 18a at identical layer.On the other hand, connecting wiring 81～86, common electrode wiring 90, Wiring member 90a are to adopt the formed Wiring member of same material with data line 16 at identical layer.Be electrically connected on electrostatic discharge protective circuit 74 an end connecting wiring 86 and be electrically connected on the sweep trace 18a of the other end, though be the Wiring member that is formed at the wiring layer that has nothing in common with each other, conducting in electrostatic discharge protective circuit 74 for interlayer.
Secondly, with reference to Fig. 3 electrostatic discharge protective circuit 71～74 is described.Fig. 3 is the circuit diagram of detailed formation of the diagram upper left of presentation graphs 2.
As shown in FIG. 3, electrostatic discharge protective circuit 71 possesses: make the 1MOS diode 71a of the grid-leakage that connects TFT, and with the 2MOS diode 71b of the grid-leakage that is connected TFT, the reverse mutually formation that connects.The source of 1MOS diode 71a (leakage of 2MOS diode 71b) and connecting wiring 81 are electrically connected, and the leakage of 1MOS diode 71a (source of 2MOS diode 71b) and connecting wiring 82 are electrically connected.Other electrostatic discharge protective circuit 72～74 also is the same formation of summary.
The electrostatic discharge protective circuit 71～74 that possesses above-mentioned formation, on twocouese, have aspect electric current and the voltage characteristic non-linear.Each diode becomes high impedance status when applying low-voltage, and becomes low impedance state when applying high voltage.And because each diode comes down to transistor, the ability that allows electric current flow through is big, can absorb static at high speed, so can obtain high electrostatic protection ability.
And; under above-mentioned formation, each electrostatic discharge protective circuit 71～74 becomes conducting when the excessive surge that is applied with plus or minus; performance is released to the effect of common electrode wiring 90 (LCCOM.) at high speed with this surge, plays the function that the TFT60 to viewing area 110 protects.
Secondly, with reference to Fig. 4 and Fig. 5 the pixel of liquid-crystal apparatus 100 is constituted and describe.Fig. 4 is the plane pie graph of the pixel formation of expression liquid-crystal apparatus 100.Fig. 5 is D-D ' the line sectional view of the Fig. 4 under the situation that constitutes reflective liquid crystal device or transmission-type liquid crystal device.
As shown in FIG. 4, in the viewing area of liquid-crystal apparatus 100, multi-strip scanning line 18a extends on the left and right directions in diagram, and many data lines 16 extend on the direction of intersecting with these sweep traces.In Fig. 4, seen that by the plane that adjacent sweep trace 18a and adjacent data line 16 are surrounded rectangular-shaped zone is pixel region (pixel 19).
In each pixel region, the pixel electrode 9 that the essentially rectangular shape is seen on plane that the conducting film of the light transmission that is waited by ITO (indium tin oxide) constitutes is set, between pixel electrode 9 and sweep trace 18a, data line 16, press from both sides and be inserted with TFT60.TFT60, the source electrode 34 of the upper layer side that possess the semiconductor layer 33, the gate electrode 18b that is arranged at the lower layer side (substrate-side) of semiconductor layer 33 that constitute by amorphous silicon (a-Si), is arranged at semiconductor layer 33 and drain electrode 35 and constitute.
TFT60 under above-mentioned formation works as on-off element, and it utilizes by the gate signal that sweep trace 18a imported and only is conducting state by the scheduled period, and the picture signal that will be supplied with by data line 16 writes for liquid crystal with predetermined timing thus.
Fig. 5 is to be section pie graphs along the tft array substrate 10 of the D-D ' line of Fig. 4 under the situation of reflective liquid crystal device or transmission-type liquid crystal device at liquid-crystal apparatus 100.Have a look with the cross-section structure shown in the figure, tft array substrate 10 is constituted by main body with the TFT60 of the inner face side (diagram upper face side) that is formed at glass substrate P and pixel electrode 9.
On glass substrate P, gate electrode 18b (sweep trace 18a) is formed figure, and covering grid electrode 18b forms the gate insulating film 43 that is made of Si oxide or silicon nitride etc.On gate insulating film 43 with gate electrode 18b planarity ground position overlapped, form semiconductor layer 33.
Covering source electrode 34 and drain electrode 35 ground form the passivating film 44 that is made of silicon nitride etc.Passivating film 44 has a part of opening on drain electrode 35, form the pixel electrode 9 that is electrically connected with drain electrode 35 by this opening.
Also have, in fact,, be formed for alignment films that the initial orientation state of liquid crystal is controlled,, be formed for polarizer, polarization plates that the polarized state of light that incides liquid crystal layer is controlled at the exterior side of glass substrate P on the surface of pixel electrode 9.And then, under the situation of transmission-type liquid crystal device, the backlight that is used as lighting unit is set in the outside of tft array substrate 10 (back side of panel side).
Subtend substrate 20 as shown in FIG. 1, possesses following formation: with inner face (with the face of the tft array substrate subtend) side of the same substrate of glass substrate P, form the common electrode 21 that constitutes by the whole planar light transmitting conductive film in plane.And, on aforementioned common electrode 21, form and the same alignment films of tft array substrate, at the substrate exterior side, set polarizer, polarization plates as required.
And, be sealing into the liquid crystal 50 between tft array substrate 10 and the subtend substrate 20, constitute based on liquid crystal molecule.As the liquid crystal molecule that constitutes this liquid crystal layer, though can adopt nematic liquid crystal, as long as any liquid crystal molecule that can be orientated of smectic crystal etc., but under the situation of TN type liquid crystal panel, preferably: the liquid crystal molecule that nematic liquid crystal is formed, for example, can enumerate: cyclohexylbenzene derivant liquid crystal, the biphenyl derivatives liquid crystal, xenyl cyclohexane derivant liquid crystal, terphenyl derivant liquid crystal, phenyl ether derivant liquid crystal, phenyl ester derivant liquid crystal, bicyclohexane derivant liquid crystal, azomethine derivant liquid crystal, azoxy derivant liquid crystal, the pyrimidine derivatives liquid crystal, dioxane derivant liquid crystal, cubane derivant liquid crystal etc.
Secondly, with reference to Fig. 6 and Fig. 7 the concrete configuration example of electrostatic discharge protective circuit 71 is described.
Fig. 6 is the figure of structure that expression can be applied to MOS (Metal OxideSemiconductor, the metal-oxide semiconductor (MOS)) diode of electrostatic discharge protective circuit 71 (72～74).Fig. 7 is the figure of structure of the MOS diode of the expression capacitive coupling work type that can be applied to electrostatic discharge protective circuit 71 (72～74).
At first, a configuration example at the electrostatic discharge protective circuit shown in Fig. 6 71 is described.Fig. 6 (a) is the plane pie graph of electrostatic discharge protective circuit 71, and Fig. 6 (b) is the section pie graph along the A-A ' line of (a).
At the electrostatic discharge protective circuit 71 shown in Fig. 6 (a), for inciting somebody to action: the 1MOS diode 71a of short circuit and the formation that 2MOS diode 71b oppositely couples together are mutually carried out in grid and leakage to TFT.1MOS diode 71a possesses: semiconductor layer 173a is arranged at the gate electrode 177 of rear side (substrate P side) of semiconductor layer 173a and source electrode 171a, the drain electrode 172a that is electrically connected with semiconductor layer 173a.Source electrode 171a is formed by branch is carried out in source wiring 171.Source wiring 171 and gate electrode 177 are electrically connected by contact hole and repeater electrode 178.And drain electrode 172a is electrically connected with grating routing 176 by contact hole and repeater electrode 174.
On the other hand, 2MOS diode 71b possesses: grating routing 176 (gate electrode), with this grating routing 176 planarityes ground formed semiconductor layer 173b of position overlapped and the source electrode 171b and the drain electrode 172b that are electrically connected with semiconductor layer 173b; Drain electrode 172b and grating routing 176 are electrically connected by contact hole and repeater electrode 175.Source electrode 171b is formed by branch is carried out in source wiring 171.
Have a look at the cross-section structure shown in Fig. 6 (b), form grating routing 176 on substrate P, covering gate 176 ground that connect up form gate insulating film 43.With the gate insulating film 43 of grating routing 176 planarityes ground position overlapped on, form semiconductor layer 173b (amorphous silicon layer and N
+Silicon layer), the both sides from this semiconductor layer 173b form source electrode 171b and drain electrode 172b with costing.Covering source electrode 171b and drain electrode 172b and form passivating film 44.Passivating film 44 on the drain electrode 172b is by an opening part, gate insulating film 43 on the grating routing 176 on diagram right side and passivating film 44 are by an opening part, and drain electrode 172b and grating routing 176 are electrically connected by buried underground a part of repeater electrode 175 in these openings.
The electrostatic discharge protective circuit 71 that has possessed above-mentioned formation; if in connecting wiring 82 side generation surges; with regard to as before becoming low impedance state and the conducting that becomes with describing, and being released to common electrode, above-mentioned surge connects up, can protect the on-off element of viewing area 110.
And the formation to electrostatic discharge protective circuit 71 and previous TFT60 once compares, and grating routing 176 (and gate electrode 177) then is positioned at identical layer with the gate electrode 18b (sweep trace 18a) of previous TFT60; Source electrode 171a, 171b, drain electrode 172a, 172b are positioned at identical layer with source electrode 34 (data line 16) and the drain electrode 35 of TFT60.And repeater electrode 175 (174,178) is positioned at identical layer with the pixel electrode 9 that is connected with TFT60.
Thereby the electrostatic discharge protective circuit 71 of present embodiment in the manufacturing process of tft array substrate 10, can form with same operation simultaneously with the pixel 19 that constitutes viewing area 110.
Secondly, other the configuration example at the electrostatic discharge protective circuit shown in Fig. 7 71 is described.Fig. 7 (a) is the plane pie graph of electrostatic discharge protective circuit 71, and Fig. 7 (b) is the section pie graph along the B-B ' line of (a).
Electrostatic discharge protective circuit 71 shown in Fig. 7 (a) possesses following formation: will and leak the 1MOS diode 71a that carries out short circuit to the grid of TFT, and be reversed mutually with 2MOS diode 71b and be connected.1MOS diode 71a possesses: semiconductor layer 183a is arranged at the gate electrode 186 of the rear side (substrate P side) of semiconductor layer 183a and the source electrode 181a, the drain electrode 182a that are electrically connected with semiconductor layer 183a.Source electrode 181a extends to the diagram left side and is electrically connected with common electrode power supply 108.Source electrode 181a and gate electrode 186 are electrically connected by contact hole and repeater electrode 185.And drain electrode 182a extends to 2MOS diode 71b side and is electrically connected with the source electrode 181b of 2MOS diode 71b.And, extend to the electrode of 2MOS diode 71b side from source electrode 181a branch, constitute the drain electrode 182b of 2MOS diode 71b.
Source electrode 181a and the gate electrode 186 of 1MOS diode 71a, the overlapping part in planarity ground and disposing forms capacitor C 1 in this lap position.
On the other hand, 2MOS diode 71b possesses: semiconductor layer 183b and the source electrode 181b and the drain electrode 182b that are electrically connected with semiconductor layer 183b; Source electrode 181b and gate electrode 187 are electrically connected by contact hole and repeater electrode 188.Source electrode 181b extends to the diagram right side and is electrically connected with connecting wiring 82.
Have a look at the cross-section structure shown in Fig. 7 (b), form gate electrode 187 on substrate P, covering grid electrode 187 ground form gate insulating film 43.With the gate insulating film 43 of gate electrode 187 planarityes ground position overlapped on form semiconductor layer 183b (amorphous silicon layer and N
+Silicon layer), the both sides from this semiconductor layer 183b form source electrode 181b and drain electrode 182b with costing.Covering source electrode 181b and drain electrode 182b and form passivating film 44.Passivating film 44 on the drain electrode 182b is by an opening part, gate insulating film 43 on the gate electrode 187 on diagram right side and passivating film 44 are electrically connected drain electrode 182b and gate electrode 187 by an opening part by buried underground a part of repeater electrode 188 in these openings.
And the formation to electrostatic discharge protective circuit 71 and previous TFT60 once compares, and gate electrode 187 (and gate electrode 186) then is positioned at identical layer with the gate electrode 18b (sweep trace 18a) of previous TFT60; Source electrode 181a, 181b, drain electrode 182a, 182b are positioned at identical layer with source electrode 34 (data line 16) and the drain electrode 35 of TFT60.And repeater electrode 188 (185) is positioned at identical layer with the pixel electrode 9 that is connected with TFT60.
Thereby the electrostatic discharge protective circuit 71 of present embodiment in the manufacturing process of tft array substrate 10, also can form with same operation with the pixel 19 that constitutes viewing area 110 simultaneously.
The electrostatic discharge protective circuit 71 that has possessed above-mentioned formation is reversed connection mutually to MOS diode 71a, the 71b of capacitive coupling work type, even be compared at the electrostatic discharge protective circuit shown in Fig. 6 71, also is suitable as the electrostatic discharge protective circuit of electro-optical device.Though usually; with the grid of TFT and leak short circuit the MOS diode; then can not be if do not connect grid and leak as holding circuit work; but in the electrostatic discharge protective circuit shown in Fig. 7 71; even under the state that repeater electrode 185,188 is not set; capacity ratio by capacitor C 1 and gate insulating film 43 also can make 1MOS diode 71a work, and the capacity ratio by capacitor C 2 and gate insulating film 43 also can make 2MOS diode 71b work.Promptly; forming simultaneously with same operation under the situation of electrostatic discharge protective circuit 71 and pixel 19; if with respect in the MOS diode shown in Fig. 6 not after forming pixel electrode 9 then as holding circuit with regard to idle situation; MOS diode at the capacitive coupling work type shown in Fig. 7; because as long as formation source/drain electrode just carries out work; so can make electrostatic discharge protective circuit carry out work, become and more effectively to protect TFT60 in the earlier stage of manufacturing process.
More than, describe ground as the reference accompanying drawing, the liquid-crystal apparatus 100 of present embodiment, be provided with the 1st shield wiring portion 91 that surrounds viewing area 110 because possess tft array substrate 10, with the formation of the 2nd shield wiring portion 92 that surrounds the 1st shield wiring portion 91, so can access excellent antistatic.And above-mentioned shield wiring portion 91,92 because can possess in the liquid-crystal apparatus as product, so not only in manufacturing process, also avoid well in use statically circuit being protected, becomes the liquid-crystal apparatus of good reliability.
And above-mentioned shield wiring portion 91,92 can form simultaneously in the manufacturing of the pixel 19 of viewing area 110, and then the electrostatic discharge protective circuit that is possessed in the liquid-crystal apparatus of present embodiment can be made in the manufacturing process of pixel 19 simultaneously.Thereby, according to present embodiment, in the time of can not increasing worker and the reliability of liquid-crystal apparatus is improved.
The 2nd embodiment
Secondly, with reference to Fig. 8 the 2nd embodiment of the present invention is described.Fig. 8 is the figure that the summary circuit of the tft array substrate 10 in the liquid-crystal apparatus of expression present embodiment constitutes.Also have, the formation beyond the dividing circuit shown in Fig. 8 constitutes, since same with the 1st previous embodiment, so, details is suitably omitted and describes about common formation.
As shown in FIG. 8, tft array substrate 10 at the liquid-crystal apparatus of present embodiment is provided with: a plurality of pixels 19 are arranged and form that rectangular viewing area 110 is seen on the plane and 104,2 common electrode power supplys 108 of 101,2 scan line drive circuits of data line drive circuit of the substrate limit end arranged cells of 110 diagram below along the viewing area.Be electrically connected from data line drive circuit 101 extended data lines 16 and each pixel 19, be electrically connected from scan line drive circuit 104,104 extended sweep trace 18a and each pixel 19 respectively.
110 to extended each data line 16 in diagram top from the viewing area; be electrically connected with electrostatic discharge protective circuit 72 respectively; electrostatic discharge protective circuit 72 is electrically connected with the Wiring member 192a that extends the diagram left and right directions in end, substrate limit by 2 electrostatic discharge protective circuits 71.110 to extended each the sweep trace 18a of diagram left and right directions from the viewing area, is electrically connected with electrostatic discharge protective circuit 74 respectively.Be disposed at the electrostatic discharge protective circuit 74 in diagram left side, be electrically connected with Wiring member 192b, be disposed at the electrostatic discharge protective circuit 74 on diagram right side, be electrically connected with Wiring member 192d by 2 electrostatic discharge protective circuits 73 by 2 electrostatic discharge protective circuits 73.
The liquid-crystal apparatus of present embodiment possesses: see the 1st shield wiring portion 191 that the Wiring member of コ font constitutes by the plane of extending along the end, 3 limits of tft array substrate 10; The 2nd shield wiring portion 192 that 4 Wiring member 192a～192d that disposed by encirclement viewing area 110 constitute; With by being arranged at the 3rd shield wiring portion 193 that plane between the 1st shield wiring portion 191 and the 2nd shield wiring portion 192 sees that the common electrode wiring of コ font constitutes.
Constitute the Wiring member 192a～192d of the 2nd shield wiring portion 192, be electrically connected mutually, be electrically connected with the 3rd shield wiring portion 193 (common electrode wiring) by the connecting elements 9c～9f that is disposed at the substrate top in each end.Also have, Wiring member 192c, the rear side by data line drive circuit 101 disposes (substrate P side).Though at data line drive circuit 101, Wiring member 192c is connected with the data line 16 of identical layer, can be not disturb with data line 16 by the mode laying-out and wiring member 192c in IC chip installation area territory.
The 1st shield wiring portion 191 adopts same material and forms at identical layer with sweep trace 18a, and the 2nd shield wiring portion 192 and the 3rd shield wiring portion 193 all adopt same material and form at identical layer with data line 16.Thereby shield wiring portion 191～193 can form with same operation simultaneously with the pixel 19 of viewing area 110 in the present embodiment.
Liquid-crystal apparatus according to the present embodiment that has possessed above formation, because make 3 shield wiring portions 191～193, surrounding 110 ground, viewing area is configured, even, also can become liquid-crystal apparatus with better antistatic behaviour so be compared to the liquid-crystal apparatus of the 1st previous embodiment.Thereby, become the damage that is difficult to be created in the manufacturing process and can high finished product rate ground make, the liquid-crystal apparatus of good reliability.
Electronic equipment
Fig. 9 is the stereographic map of an example of expression electronic equipment of the present invention.Portable telephone 1300 in the figure, the liquid-crystal apparatus that possesses above-mentioned embodiment be as undersized display part 1301, possesses a plurality of action buttons 1302, receiving mouth 1303, and mouth piece 1304 and constituting.
The electro-optical device of the respective embodiments described above, be not limited to above-mentioned portable telephone, can be used as e-book suitably, personal computer, the static camera of numeral, liquid crystal TV set, the find a view video tape recorder of type or monitor direct viewing type, automobile navigation apparatus, pager, electronic memo, counter, word processor, workstation, television telephone set, the POS terminating machine, the image-display units that possesses equipment that touch panel is arranged or the like, in electronic equipment arbitrarily, can both constitute the display part with good reliability, the reliability that goes far towards electronic equipment improves.
Claims (14)
1. electro-optical device, it possesses: make a plurality of pixels be arranged in rectangular viewing area and corresponding to the set on-off element of aforementioned each pixel, it is characterized in that possessing on device substrate:
The 1st shield wiring portion, it surrounds at least 3 limits of aforementioned viewing area; With
The 2nd shield wiring portion, it surrounds the 1st shield wiring portion.
2. according to the described electro-optical device of claim 1, it is characterized in that:
At least one side of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion is and surrounds the rectangular-shaped of aforementioned viewing area and form.
3. according to the described electro-optical device of claim 2, it is characterized in that:
Aforementioned the 1st shield wiring portion and the 2nd shield wiring portion and stride the formed common electrode of aforementioned a plurality of pixel and are electrically connected.
4. according to any one the described electro-optical device in the claim 1～3, it is characterized in that:
Possess the common electrode wiring on the aforementioned components substrate, this common electrode wiring is electrically connected with striding the formed common electrode of aforementioned a plurality of pixel, forms the 3rd shield wiring portion at least 3 limits that surround aforementioned viewing area.
5. according to any one the described electro-optical device in the claim 1～4, it is characterized in that:
The aforementioned switches element is a thin film transistor (TFT), and this thin film transistor (TFT) possesses: be formed at the gate electrode on the aforementioned components substrate, by the semiconductor layer of gate insulating film and this gate electrode subtend and the source/drain electrode that is electrically connected with this semiconductor layer;
Either party of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion adopts same material to form with aforementioned source/drain electrode at identical layer.
6. according to the described electro-optical device of claim 5, it is characterized in that:
Either party of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion adopts same material to form with aforementioned gate electrode at identical layer.
7. according to the described electro-optical device of claim 5, it is characterized in that:
Possess pixel electrode, this pixel electrode is electrically connected with the aforementioned switches element by aforementioned source/drain electrode;
Either party of aforementioned the 1st shield wiring portion and the 2nd shield wiring portion adopts same material to form with aforementioned pixel electrode at identical layer.
8. according to any one the described electro-optical device in the claim 1～7, it is characterized in that:
Possess pixel electrode, this pixel electrode is electrically connected with the aforementioned switches element by aforementioned source/drain electrode;
By adopting the formed connecting elements of same material at identical layer, with at least 2 electrical connections mutually of aforementioned the 1st～the 3rd shield wiring portion with aforementioned pixel electrode.
9. according to any one the described electro-optical device in the claim 1～8, it is characterized in that:
On the aforementioned components substrate, be formed with many data lines and the multi-strip scanning line that extend across mutually, be provided with aforementioned pixel corresponding to the cross part of aforementioned data line and aforementioned sweep trace;
Aforementioned the 1st shield wiring portion or the 2nd shield wiring portion and aforementioned sweep trace or aforementioned data line, by at least more than or equal 1 electrostatic discharge protective circuit and be electrically connected.
10. according to the described electro-optical device of claim 9, it is characterized in that:
Aforementioned electrostatic discharge protective circuit has the MOS diode, this MOS diode possess with aforementioned thin film transistor (TFT) at the formed semiconductor layer of identical layer.
11., it is characterized in that according to the described electro-optical device of claim 10:
Aforementioned electrostatic discharge protective circuit will oppositely be connected the 1MOS diode of the gate electrode of aforementioned thin film transistor (TFT) with the drain electrode short circuit mutually with the 2MOS diode.
12., it is characterized in that according to the described electro-optical device of claim 11:
Be the MOS diode of capacitive coupling work type, wherein, the source electrode of aforementioned 1MOS diode and gate electrode planarity ground is overlapping and dispose, and the source electrode of aforementioned 2MOS diode and the gate electrode planarity overlapping part in ground and dispose.
13., it is characterized in that according to the described electro-optical device of claim 12:
The MOS diode of aforementioned capacitive coupling work type is electrically connected the linear identical layer that is formed in of aforementioned shield wiring portion and aforementioned data with aforementioned shield wiring portion.
14. an electronic equipment is characterized in that possessing:
The described electro-optical device of in the claim 1～13 any one.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005224123 | 2005-08-02 | ||
| JP224123/2005 | 2005-08-02 | ||
| JP111990/2006 | 2006-04-14 |
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| CN1908788A true CN1908788A (en) | 2007-02-07 |
| CN100533238C CN100533238C (en) | 2009-08-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006101083295A Expired - Fee Related CN100533238C (en) | 2005-08-02 | 2006-08-01 | Electro-optical device and electronic apparatus |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101713897A (en) * | 2008-10-03 | 2010-05-26 | 株式会社半导体能源研究所 | Display device |
| CN102629008A (en) * | 2011-03-30 | 2012-08-08 | 京东方科技集团股份有限公司 | Thin film transistor liquid crystal display panel and manufacturing method thereof |
| CN103091913A (en) * | 2011-10-28 | 2013-05-08 | 株式会社日本显示器西 | Electro-optic Device And Display Device |
| CN103165525A (en) * | 2011-12-13 | 2013-06-19 | 上海天马微电子有限公司 | Preparation method of thin film transistor (TFT) array substrate and preparation method of electro-static discharge (ESD) protective circuit on TFT array substrate |
| CN104617103A (en) * | 2009-08-07 | 2015-05-13 | 株式会社半导体能源研究所 | Semiconductor device and manufacturing method thereof |
| CN107564414A (en) * | 2017-08-14 | 2018-01-09 | 武汉天马微电子有限公司 | A kind of display panel and display device |
| CN109254435A (en) * | 2018-11-09 | 2019-01-22 | 惠科股份有限公司 | A kind of electrostatic protection structure and display device of display panel |
| CN112684642A (en) * | 2020-12-04 | 2021-04-20 | 惠科股份有限公司 | Display panel and display device |
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| JP5639514B2 (en) * | 2011-03-24 | 2014-12-10 | 株式会社東芝 | Display device |
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| CN101713897A (en) * | 2008-10-03 | 2010-05-26 | 株式会社半导体能源研究所 | Display device |
| CN104617103B (en) * | 2009-08-07 | 2018-04-10 | 株式会社半导体能源研究所 | Liquid crystal display device and semiconductor device |
| CN104617103A (en) * | 2009-08-07 | 2015-05-13 | 株式会社半导体能源研究所 | Semiconductor device and manufacturing method thereof |
| US10243005B2 (en) | 2009-08-07 | 2019-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN102629008A (en) * | 2011-03-30 | 2012-08-08 | 京东方科技集团股份有限公司 | Thin film transistor liquid crystal display panel and manufacturing method thereof |
| CN103091913A (en) * | 2011-10-28 | 2013-05-08 | 株式会社日本显示器西 | Electro-optic Device And Display Device |
| CN103165525A (en) * | 2011-12-13 | 2013-06-19 | 上海天马微电子有限公司 | Preparation method of thin film transistor (TFT) array substrate and preparation method of electro-static discharge (ESD) protective circuit on TFT array substrate |
| CN107564414A (en) * | 2017-08-14 | 2018-01-09 | 武汉天马微电子有限公司 | A kind of display panel and display device |
| CN107564414B (en) * | 2017-08-14 | 2020-09-11 | 武汉天马微电子有限公司 | Display panel and display device |
| CN109254435A (en) * | 2018-11-09 | 2019-01-22 | 惠科股份有限公司 | A kind of electrostatic protection structure and display device of display panel |
| WO2020093597A1 (en) * | 2018-11-09 | 2020-05-14 | 惠科股份有限公司 | Electrostatic protection structure for display panel and display device |
| US11644723B2 (en) | 2018-11-09 | 2023-05-09 | HKC Corporation Limited | Electrostatic discharge (ESD) protection structure and display panel |
| CN112684642A (en) * | 2020-12-04 | 2021-04-20 | 惠科股份有限公司 | Display panel and display device |
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