CN1903510A - Freezing nanometer abrasive polishing pad and its prepn. method - Google Patents
Freezing nanometer abrasive polishing pad and its prepn. method Download PDFInfo
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- CN1903510A CN1903510A CN 200610041112 CN200610041112A CN1903510A CN 1903510 A CN1903510 A CN 1903510A CN 200610041112 CN200610041112 CN 200610041112 CN 200610041112 A CN200610041112 A CN 200610041112A CN 1903510 A CN1903510 A CN 1903510A
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Abstract
A frozen polishing pad made of abrasive nanoparticles suitable for thermosensitive material and soft material features that the liquid is used as adhesive to adhere the abrasive material together by freezing, so forming a polishing pad.
Description
Technical field
The present invention relates to a kind of nanometer abrasive polishing pad and preparation method thereof, specifically a kind ofly utilize liquid, the nanometer abrasive bonding is formed polishing pad by freezing as binding agent.
Background technology
As everyone knows, traditional CMP (chemical mechanical polishing method) system is made up of the work holder of a rotation, the workbench and polishing fluid (slurry) the feed system three parts of carrying polishing pad.During polishing, the workpiece of rotation is pressed on the polishing pad that rotates with workbench with certain pressure, and flow between workpiece and polishing pad by the polishing fluid that sub-micron or nanometer abrasive and chemical liquids are formed, and at surface of the work generation chemical reaction, the chemical reactant that surface of the work forms is removed by the mechanical friction effect of abrasive particle.Owing to selecting the free abrasive softer or suitable with workpiece hardness than workpiece for use, in the alternation procedure of chemical membrane and mechanical film forming, from surface of the work removal layer of material as thin as a wafer, the realization ultra-precision surface is processed by chemical and mechanical acting in conjunction.Although this traditional CMP technology is used widely in ultra-precision surface processing, but also show certain shortcoming in actual applications: (1) traditional CMP is based on trisome (free abrasive, polishing pad and silicon chip) abrasion mechanism, technological parameter is many, process is unstable, be difficult for realizing control automatically, production efficiency is low.(2) because polishing pad is to have certain flexible organic fabric, the selectivity of during polishing material being removed is not high, causes producing excessive polishing (Over polishing), saucerization (Dishing), nitride etch defectives such as (Nitride erosion).(3) a part of free abrasive in polishing back can be embedded in thin layer surface, not easy cleaning.And the paste composition complexity, the removing of polished surface residual slurry is a difficult problem of cleaning behind the CMP.(4) owing to abrasive particle skewness between polishing pad and workpiece, the material removing rate of workpiece each several part is inconsistent, influences surface flatness.Particularly to large-size workpiece, this influence is more outstanding.(5) in the polishing process, polishing pad produces plastic deformation and becomes smooth gradually, or the pad interface micropore surface ability that makes it hold slurry and get rid of scrap takes place to stop up reduces, and causes material removing rate to descend in time.Need finishing constantly and wetting polishing pad to recover its surface roughness and porous.The uneven wear of polishing pad makes the polishing process instability to be difficult to carry out parameter optimization in addition.(6) cost of consumptive materials such as CMP slurry, polishing pad, conditioner discs accounts for about 70% of CMP totle drilling cost, and the cost of polishing slurries just accounts for 60%～80% of consumptive material.(7) polishing slurries management and slug are handled also quite trouble.
In sum, along with more and more higher to the requirement of the efficient of cmp planarizationization, cost, uniformity, reliability, technology controlling and process ability etc.When utilizing polishing pad to carry out fine finishining, it is strong to be badly in need of a kind of adaptability, easily manufactured at present, and grinding heat is little, and free abrasive among the polishing pad replacement traditional C MP of employing concretion abrasive and polishing pad are for using.
Summary of the invention
The purpose of this invention is to provide a kind of freezing nanometer abrasive polishing pad and preparation method thereof, to adapt to the accurately machined demand of present CMP.
Technical scheme of the present invention is:
A kind of freezing nanometer abrasive polishing pad, it is characterized in that mainly by nanometer abrasive, additive and freezing after play cementation liquid form, wherein abrasive material accounts for 10%～70% of gross weight, and additive accounts for 5%～9% of gross weight, the liquid of surplus for finally build-uping ice.
Described additive is made up of polyhydroxy diamines, alkylol APEO, disodium EDTA, carboxymethyl cellulose (CMC) or polyethylene glycol (dispersant), their proportion relation is: 2%～3% (down with), the alkylol APEO that polyhydroxy diamines accounts for whole emery wheel gross weight account for whole emery wheel gross weight 2%～3%, disodium EDTA accounts for 0.5%～1% of whole emery wheel gross weight, carboxymethyl cellulose (CMC) or polyethylene glycol account for 0.5%～2% of whole emery wheel gross weight.
Described nanometer abrasive is Al
2O
3, SiC, Cr
2O
3, SiO
2, CeO
2, nano-diamond powder or their combination.
The described liquid that finally build-ups ice is that water or concentration are the hydrous ethanol of 32%-90%.
The preparation method of a kind of freezing nanometer abrasive polishing pad of above-mentioned freezing emery wheel is characterized in that may further comprise the steps:
A, at first that proportioning is good nanometer abrasive, additive and liquid agitation are even, obtain abrasive material and are in the liquid state of dispersion, suspension or colloidal state and treat freezing raw material and it is inserted in the mould;
B, then above-mentioned mould is put into freezing equipment, carry out to the condition of subzero 70 degree freezingly subzero 1, treat that pastel in the mould is frozen into solid fully and promptly gets the freezing nanometer abrasive polishing pad identical with die shape.
Beneficial effect of the present invention:
1, makes simply, be shaped easily, can manufacture different shape.
2, be suitable for the abrasive particle shaping of various materials and granularity.
3, the grinding heat that produces in the process is very little, helps preventing to be ground the generation of parts thermal stress, and easy to use, can guarantee that emery wheel can not melt voluntarily because of environment temperature by install methods such as cooling device, filling liquid nitrogen additional at the bistrique position.
4, adhesion strength can satisfy instructions for use fully.Its hardness and intensity are quite big after liquid build-ups ice, and have both guaranteed the intensity that abrasive particle combines with ice, and ice itself also can participate in certain cutting.Become its hardness of ice of piece and the intensity can be with the steel plate avulsion, it be exactly best proof that the Titanic seagoing vessel is destroyed in marine floating ice.
5, can realize the self-lubricating grinding, can not add lubricant in the process, help environmental protection, adapt to the developing direction of current green manufacturing.
6, the manufacturing for the ultrathin crystal material provides effective machining tool.
7, the high-precision surface processing for flexible material and nonmetallic materials part provides brand-new machining tool, will cause the change of materials processing mode, helps opening up the new purposes of this class material.
8, easy to use, but now-making-now-using.
9, operating process is simple, can realize grinding tool from dressing, do not have to change and trimming polished pad and clear up the shut-down problem that polishing slurries brought, do not have the maintenance and the handling problem of polishing fluid.
10, can work under high speed, rotating speed can be got to hundreds of to be changeed, and helps improving working (machining) efficiency, has overcome traditional excessive shortcoming of the too high abrasive material of CMP rotating speed.
11, owing to adopt concretion abrasive polishing pad, do not have free abrasive, therefore can think based on two body abrasion mechanisms.
12, has superior planarization capability, can rapidly remove the oxide-film of ledge, and the oxide-film at low-lying place is not influenced by mechanism, and is strong to the selective removal ability of convex-concave surface material, and the surface topography height can reach 200: 1 with the ratio of leveling film thickness.
13, in the chip multilayer wiring, make direct high-density plasma (HDP) shallow trench isolation become possibility, no longer need reactive ion etching (RIE) process from (STI) polishing.
14, can reach very little interior heterogeneity (WIW-UN) of wafer and the interior heterogeneity (WID-NU) of chip.
15, has polishing automatic stop function (Self-stopping).Since very insensitive to crossing throwing, minimum saucerization and corrosion only produced, be equivalent to the polishing behavior and stop automatically.
16, abrasive material utilization rate height reduces the pollution of contaminant particles to polished surface effectively, and finished surface cleans easily, and liquid waste processing is simple, can effectively reduce cost.
17, state-variable is few, and process is stable, has repeatability, realizes automation control easily.
18, can realize computer-controlled chemical reaction each/or medicine reaction.
19, according to the difference of additive, its invention also can be used for making non-CMP grinding grinding tool, can be used for the final polishing of industries such as crystal, glass.
Description of drawings
The mould structure schematic diagram of Fig. 1 freezing nanometer abrasive polishing pad of the present invention.
Fig. 2 is the schematic diagram of freezing nanometer abrasive polishing pad of the present invention.
The specific embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
As shown in Figure 1, 2.
Embodiment one.
A kind of ultra-thin materials polishing is with the freezing polishing pad of CMP, by the nanometer SiO of 500 grams
2(or nano Ce O
2) 440 water (or concentration is 45 hydrous ethanol) of the additives (it is by polyhydroxy diamines 25 gram alkylol APEOs 20 grams, disodium EDTA 10 grams, carboxymethyl cellulose (CMC) or polyethylene glycol (dispersant) 15 grams) of abrasive material, 70 grams and surplus forms, earlier the three is mixed before using and make it to form the colloidal mixture that abrasive material is in dispersion, suspension, be pressed into again in the polishing pad mould, put into low-temperature test chamber freezing 45 minutes together with mould then, and under 40 degrees below zero, be incubated 15 minutes.Should carry out the demoulding earlier during use, fast it is installed in the use of can starting shooting on the unit head that has cooling device or liquid nitrogen then, adopt this polishing pad processing monocrystalline silicon piece can make surface roughness value reach Ra=2.01nm, improve nearly 14 times than traditional CMP efficient.
Embodiment two.
A kind of ultra-soft material polishing is with the freezing polishing pad of CMP, by the nano Ce O of 100 grams
2(or nanometer SiO
2) additives (it is by polyhydroxy diamines 20 gram, alkylol APEO 20 grams, disodium EDTA 10 grams, carboxymethyl cellulose (CMC) or polyethylene glycol (dispersant) 10 grams) of abrasive material, 60 grams are formed by the ratio of setting and 850 water (or concentration is 32 hydrous ethanol) of surplus is formed, earlier the three is mixed before using and make it to form the colloidal mixture that abrasive material is in dispersion, suspension, be pressed into again in the polishing pad mould, put into low-temperature test chamber freezing 50 minutes together with mould then, and under subzero 30 degree, be incubated 60 minutes.Should carry out the demoulding earlier during use, fast it is installed in the use of can starting shooting on the unit head that has cooling device or liquid nitrogen then.Adopt this polishing pad processing 1mm aluminium sheet can make surface roughness value reach Ra=3.03nm, improve nearly 10 times than traditional CMP efficient.
Embodiment three.
A kind of superhard material polishing freezing polishing pad of CMP, Nano diamond abrasive material (or nanometer Al2O3 abrasive material by 700 grams, the nano SiC abrasive material, nanometer Cr2O3 abrasive material), (it is by polyhydroxy diamines 30 grams for the additive of 80 grams, alkylol APEO 25 grams, disodium EDTA 10 grams, the liquid (or concentration is 90 hydrous ethanol) of carboxymethyl cellulose (CMC) or polyethylene glycol (dispersant) 15 grams and 230 is formed, earlier the three is mixed before using and make it to form abrasive material and be in dispersion, the colloidal mixture of suspension, be pressed into again in the polishing pad mould, put into low-temperature test chamber freezing 35 minutes together with mould then, and under subzero 70 degree, be incubated 30 minutes.Should carry out the demoulding earlier during use, fast it is installed in the use of can starting shooting on the unit head that has cooling device or liquid nitrogen then.Adopt this polishing pad processing CVD diamond thick-film can make surface roughness value reach Ra=4.05nm, improve nearly 12 times than traditional CMP efficient.
Embodiment four.
Present embodiment and embodiment one to three are basic identical, and institute's difference is that the additive that added does not contain the composition with processed object chemically reactive.
Claims (5)
1, a kind of freezing nanometer abrasive polishing pad, it is characterized in that mainly by nanometer abrasive, additive and freezing after play cementation liquid form, wherein abrasive material accounts for 10%～70% of gross weight, and additive accounts for 5%～9% of gross weight, the liquid of surplus for finally build-uping ice.
2, freezing nanometer abrasive polishing pad according to claim 1, it is characterized in that described additive is made up of polyhydroxy diamines, alkylol APEO, disodium EDTA, carboxymethyl cellulose or polyethylene glycol, their proportion relation is: polyhydroxy diamines account for whole emery wheel weight 2%～3%, the alkylol APEO account for whole emery wheel weight 2%～3%, disodium EDTA accounts for 0.5%～1% of whole emery wheel weight, carboxymethyl cellulose or polyethylene glycol account for 0.5%～2% of whole emery wheel weight.
3, freezing nanometer abrasive polishing pad according to claim 1 is characterized in that described nanometer abrasive is Al
2O
3, SiC, Cr
2O
3, SiO
2, CeO
2, nano-diamond powder or their combination.
4, freezing nanometer abrasive polishing pad according to claim 1 is characterized in that the described liquid that finally build-ups ice is that water or concentration are the hydrous ethanol of 32%-90%.
5, a kind of preparation method of freezing nanometer abrasive polishing pad is characterized in that may further comprise the steps:
A, at first that proportioning is good nanometer abrasive, additive and liquid agitation are even, obtain abrasive material and are in the liquid state of dispersion, suspension or colloidal state and treat freezing raw material and it is inserted in the mould;
B, then above-mentioned mould is put into freezing equipment, carry out to the condition of subzero 70 degree freezingly subzero 1, treat that pastel in the mould is frozen into solid fully and promptly gets the freezing nanometer abrasive polishing pad identical with die shape.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100411127A CN100425405C (en) | 2006-08-03 | 2006-08-03 | Freezing nanometer abrasive polishing pad and its prepn. method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100411127A CN100425405C (en) | 2006-08-03 | 2006-08-03 | Freezing nanometer abrasive polishing pad and its prepn. method |
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| Publication Number | Publication Date |
|---|---|
| CN1903510A true CN1903510A (en) | 2007-01-31 |
| CN100425405C CN100425405C (en) | 2008-10-15 |
Family
ID=37672946
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| CN102049739A (en) * | 2010-10-11 | 2011-05-11 | 南京航空航天大学 | Frozen consolidated abrasive polishing pad bearing device and polishing pad thereof |
| CN102335888A (en) * | 2010-10-11 | 2012-02-01 | 南京航空航天大学 | Slotting-type freezing and solidifying grinding material polishing pad and preparation method thereof |
| CN105081991A (en) * | 2015-08-27 | 2015-11-25 | 安徽威铭耐磨材料有限公司 | High anti-corrosion and temperature-changing resistant cubic boron nitride (CBN) grinding wheel with superfine granularity and preparation method thereof |
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| FR2835844B1 (en) * | 2002-02-13 | 2006-12-15 | Clariant | PROCESS FOR THE MECANO-CHEMICAL POLISHING OF METAL SUBSTRATES |
| US6705923B2 (en) * | 2002-04-25 | 2004-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Chemical mechanical polisher equipped with chilled wafer holder and polishing pad and method of using |
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2006
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| CN102049739A (en) * | 2010-10-11 | 2011-05-11 | 南京航空航天大学 | Frozen consolidated abrasive polishing pad bearing device and polishing pad thereof |
| CN102335888A (en) * | 2010-10-11 | 2012-02-01 | 南京航空航天大学 | Slotting-type freezing and solidifying grinding material polishing pad and preparation method thereof |
| CN102049739B (en) * | 2010-10-11 | 2012-07-25 | 南京航空航天大学 | Frozen consolidated abrasive polishing pad bearing device and polishing pad thereof |
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