CN1900724A - Differential piesoelectric two dimension acceleration sensor - Google Patents
Differential piesoelectric two dimension acceleration sensor Download PDFInfo
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- CN1900724A CN1900724A CN 200610054418 CN200610054418A CN1900724A CN 1900724 A CN1900724 A CN 1900724A CN 200610054418 CN200610054418 CN 200610054418 CN 200610054418 A CN200610054418 A CN 200610054418A CN 1900724 A CN1900724 A CN 1900724A
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Abstract
The sensor includes following parts and structures: insulative inertial mass block in cube; four pieces of XO0 cutting type quartz wafer with electrode are jointed four walls of the inertial mass block; the inertial mass block and quartz wafers are instilled inside base frame composed of case body and case cover. Each insulative force transmission block is pasted on outside each quartz wafer. Pretension screw of withstanding each piece of force transmission block is arranged on four walls of the base frame. Through signal lead wire, one end of the case cover is connected to electrode, and the other end is connected to connector plug, which is connected to differential type charge amplifier. The sensor possesses high sensitivity, or, when outside force is smaller, output signal is still strong so as to reduce measuring error brought from environmental change. Features of the sensor are: light weight, simple structure, easy of manufacture.
Description
Technical field
The present invention relates to acceleration transducer, specifically, relate to the piezoelectric acceleration sensor of two dimension.
Background technology
Two dimension acceleration sensor is the vibration or the impact acceleration of measurement space both direction simultaneously.At present, known two-dimensional piezoelectric formula acceleration transducer is mainly taked two kinds of schemes, a kind of being vertically mounted in the metal shell mutually by two unidirectional acceleration transducers with independent output formed, that is: this two dimension acceleration sensor is formed (referring to Fig. 1) by unidirectional acceleration transducer and contiguous block, obviously, the volume of this class sensor and deadweight are all bigger than normal.Another kind is shearing, compression combined type two-dimensional piezoelectric acceleration transducer, that is: it is two groups of piezoelectric elements to be mutually by the peak response axle be installed on the pedestal after 90 ° mode makes up, then after loading onto the inertial mass pretension on the piezoelectric element, housing and pedestal are welded together (referring to Fig. 2), yet, this two-dimensional piezoelectric formula acceleration transducer is power hour weak output signals externally, and sensitivity is not high, can't overcome the measuring error that the variation because of environment causes simultaneously.
Summary of the invention
The technology that the present invention will solve is, overcome the deficiency of existing piezoelectric type two dimension acceleration sensor, propose a kind of not only simple in structure, in light weight, output signal is strong, highly sensitive when external force is less, can also overcome simultaneously the two-dimentional differential piesoelectric acceleration sensor of the error of bringing to measurement because of the variation of environment.
Solving the present invention and propose the technical scheme that technical matters adopts, is a kind of like this differential piesoelectric two dimension acceleration sensor.What it was same as the prior art is that this sensor comprises the inertial mass of insulation, the pedestal that is fitted in the piezoelectric element that has electrode on this inertial mass and this inertial mass and piezoelectric element are installed.Its improvements are, inertial mass wherein is a cube, this inertial mass is installed in the inner chamber of a cubical wafer orientation frame, this wafer orientation frame inner chamber is the cubic chamber that its degree of depth is contour with this inertial mass and all the other inner cavity sizes equate with this inertial mass, and inside and outside two cubical vertical pivots of this wafer orientation frame are overlapping and its corresponding surface is parallel; Inside and outside two cubical vertical pivots of this wafer orientation frame are overlapping and its corresponding surface is parallel.Piezoelectric element of the present invention is the quartz wafer that four walls with this wafer orientation frame have XO ° of cut type of same thickness, and they are embedded in the wall of this wafer orientation frame with electrode state up, and the axial opposed of every pair of relative quartz wafer sensitivity; All be fitted with the force-transmitting block of each a slice insulation in the outside of this four bauerites wafer.Pedestal of the present invention is made up of the casing and the case lid of a cube shaped, wafer orientation frame and four force-transmitting blocks of inertial mass, four bauerite wafers of having packed into are installed in this casing, and the pretension screw that heads on each force-transmitting block is all arranged on the wall of this pedestal casing.One end is arranged by signal lead connects with electrode, the other end connects with the differential type charge amplifier connection plug on the case lid of this pedestal.
When sensor sensing to of the present invention during perpendicular to the acceleration of one of them sensors sides, inertial mass in the sensor will produce an inertial force opposite with this acceleration, at this moment, face that piezoelectric element pressurized of acceleration direction, while is owing to the reason of pretightning force, that piezoelectric element relative with the piezoelectric element of this pressurized is equivalent to tension, and the result produces the electric charge of positive and negative variation on the surface of two piezoelectric elements; When sensor sensing to of the present invention the acceleration opposite with above-mentioned acceleration direction, this inertial mass will produce an inertial force opposite with above-mentioned inertial force, its pressurized is just in time opposite with the piezoelectric element of tension, and the result produces the electric charge of the positive and negative variation opposite with above-mentioned charge variation on the surface of two piezoelectric elements; In like manner, when sensor sensing to of the present invention during perpendicular to the acceleration of two other side, inertial mass also will produce the inertial force opposite with its acceleration, and the piezoelectric element of these two sides also will produce the electric charge of corresponding positive and negative variation; In like manner, when sensor of the present invention is sensed two dimension acceleration simultaneously, also will produce the electric charge of corresponding positive and negative variation at the piezoelectric element of four sides, the charge signal of the positive and negative variation that these are different is by each electrode, signal lead, socket, finally be delivered to the differential type charge amplifier, like this, just realized by the measurement of measuring acceleration.
The invention has the beneficial effects as follows:
Compare with the two dimension acceleration sensor that existing two the orthogonal unidirectional groups of acceleration sensors with independent output of packing in metal shell become, sensor of the present invention is owing to have only an inertial mass, so in light weight, simple in structure, be easy to processing and manufacturing; Two groups of piezoelectric elements are mutually the sensor that is installed on the pedestal after 90 ° mode makes up by the peak response axle compare with existing, owing to the present invention adopt the reason of variate mode, output signal is strong when external force is less, it is highly sensitive, can overcome the error that the variation because of environment brings to measurement.
The present invention is suitable under multiple occasion the measurement to acceleration.
The present invention is further illustrated below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is existing a kind of acceleration transducer synoptic diagram;
Fig. 2 is existing another kind of acceleration transducer synoptic diagram;
Fig. 3 is the assembly structure figure of acceleration transducer of the present invention;
Fig. 4 is the vertical view of Fig. 3;
Fig. 5 is the wafer orientation frame structural map among Fig. 3;
Fig. 6 is the vertical view of Fig. 5;
Fig. 7 is that the wall of wafer orientation frame among Fig. 3 has been embedded in the structural drawing behind the piezoelectric element.
Fig. 8 is the vertical view of Fig. 7;
Fig. 9 is the piezoelectric element structural map that among Fig. 3 has electrode;
Figure 10 is the structural map of the inertial mass among Fig. 3.
Embodiment
A kind of differential piesoelectric two dimension acceleration sensor (with reference to figure 3,4).This sensor comprises the inertial mass of insulation, the pedestal that is fitted in the piezoelectric element that has electrode on this inertial mass and this inertial mass and piezoelectric element are installed.Wherein, inertial mass 1 of the present invention is a cube.This inertial mass 1 is installed in the inner chamber of a cubical wafer orientation frame 2, these wafer orientation frame 2 inner chambers cubic chamber that to be its degree of depth contour with this inertial mass 1 and all the other inner cavity sizes equate with this inertial mass 1, inside and outside two cubical vertical pivots of this wafer orientation frame 2 are overlapping and its corresponding surface is parallel.Piezoelectric element of the present invention is the quartz wafer (31,32,33,34) that four walls with this wafer orientation frame 2 have XO ° of cut type of same thickness, they are embedded in the wall of this wafer orientation frame 2 with electrode (82,81) state up, and the axial opposed of every pair of relative quartz wafer (31 and 33,32 and 34) sensitivity.All be fitted with the force-transmitting block 4 of each a slice insulation in the outside of this four bauerites wafer (31,32,33,34).Pedestal of the present invention is made up of the casing 51 and the case lid 52 of a cube shaped.Wafer orientation frame 2 and four force-transmitting blocks 4 of inertial mass 1, four bauerite wafers (31,32,33,34) of having packed into are installed in this casing 51, and the pretension screw 6 that heads on each force-transmitting block 4 is all arranged on the wall of this pedestal casing; One end is arranged by the connection plug 7 that electrode (82,81) connect, the other end with differential type charge amplifier connect of signal lead 61 on the case lid 52 of this pedestal with each piezoelectric element.In this embodiment, the locating rack cavity volume in the wafer orientation frame 2 of this sensor, the pedestal, the geometric center of pedestal overlap, and the center of the threaded hole of the center of piezoelectric element and pretension screw overlaps with the center at the four sides of wafer locating rack 2.It will be apparent to those skilled in that differential type charge amplifier wherein and the connection that connects plug 7 all are the on line with commercially available band teflon connector usually.
By the disclosure of above-mentioned embodiment, those skilled in the art can reproduce the present invention fully.Therefore, above-mentioned disclosure also is following each routine summation, and in following each example, the content identical with this summation do not given unnecessary details.
Embodiment 1 (with reference to figure 3,4,9,10):
This example is on the basis of summation part, improves the example of invention reliability.All there is a relatively long relative electrode (82,81) than weak point with that all is positioned in the middle of its top on the two sides of the four bauerite wafers (31,32,33,34) in this example.The signal lead 61 that has corresponding cross wiring groove 11, one ends of electrode (82,81) of its opening and each quartz wafer (31,32,33,34) to connect each electrode (82,81) on the top of inertial mass 1 is pooled to the back, place, point of crossing of this cross wiring groove 11, connects with the described plug 7 that connects.
Embodiment 2 (with reference to figure 3,4,5,6,7,8):
This example is on the basis of summation part or embodiment 1, further improves the example of invention reliability and assurance manufacturability.It is parallel with the obverse limit of inertial mass 1 but less than this obverse square that four bauerite wafers (31,32,33,34) are its four limit in this example.Force-transmitting block 4 wherein equates with the height of wafer orientation frame 2, equate with the nominal size of quartz wafer (31,32,33,34) width and overlapping fully but the upper deviation its width value is not more than the lower deviation of quartz wafer (31,32,33,34)---like this, just guaranteed that force-transmitting block 4 can pass to quartz wafer (31,32,33,34) to the acceleration signal of sensing reliably further.
Embodiment 3 (with reference to figure 3,4):
This example is on the basis of summation part, embodiment 1 or embodiment 2, further improves the example of invention reliability.Little 1～the 2mm of height of its depth ratio wafer orientation frame 2, the locating rack cavity volume that all the other correspondingly-sized equate with this wafer orientation frame 2 are arranged in this routine pedestal, the big 0.5～1mm of thickness of its depth ratio force-transmitting block 4, force-transmitting block 4 locating slots that its width equates with this force-transmitting block 4 are respectively arranged on the wall of this cavity volume.The case lid 52 of pedestal is that the contact condition of pure spacing property is fixed on the casing 51 of its pedestal and (that is to say with its bottom surface and wafer orientation frame 2 end faces, when covering this case lid 52 regularly on the casing 51 of pedestal, promptly to guarantee the position-limiting action of this case lid 52, can not apply so-called pretightning force to wafer orientation frame 2 end faces again).
Embodiment 4:
This example is on the basis of summation part, embodiment 1, embodiment 2 or embodiment 3, relate to aspect the insulating material for example.In this example, inertial mass 1 is to be made by the high desnity metal material that its outside surface is coated with the teflon insulation layer (to it will be apparent to those skilled in that, inertial mass should be used the relatively large material of density, therefore, said " high desnity metal material " is material used in the prior art fully, wherein, relatively be typically with tungsten or the bigger metal of color density---to reduce the volume of sensor); Wafer orientation frame 2 is made by polytetrafluoroethylmaterial material.
Whether because what adopt is the traditional material in this area, it is suitable not know to mention in claims
Self-evident, in above all embodiments and example, the external part of all electrodes (82,81) all can not be above the end face of wafer orientation frame 2.For guaranteeing reliability, this external part usually should be than the short 1～3mm of the end face of wafer orientation frame 2.
Below more in conjunction with the embodiments 4, further disclose manufacturing process of the present invention.
On two surfaces of foursquare piezoelectric element, plate electrode (82,81); Process cross wiring groove 11 on the upper surface of inertial mass 1, the groove depth of this wiring groove and groove width are all got 2mm, then at the surperficial external application teflon of the inertial mass 1 that obtains; Make wafer orientation frame 2 with polytetrafluoroethylmaterial material, notice that the centre above the square hole of this locating rack embedding quartz wafer (31,32,33,34) processes and draw the sulculus of each quartz wafer (31,32,33,34) electrode (82,81); In cubical pedestal casing 51, process a cavity that wafer orientation frame 2 is installed in the heart, and then processing the counterbore (and manufacturing pedestal case lid 52 simultaneously) that is complementary with pedestal case lid 52, four force-transmitting block 4 locating slots of processing on four walls of the cavity that wafer orientation frame 2 is installed, and then in the four sides of cavity, process the threaded hole that pretension screw 6 is installed in the heart, process the installation threaded hole 511 of a sensor under pedestal casing 51 in the heart.The wafer orientation frame 2 that quartz wafer (31,32,33,34) will be installed is packed in the pedestal casing 51, then inertial mass 1 is put into wafer orientation frame 2, and then load onto force-transmitting block 4 and pretension screw 6, at last, cover pedestal case lid 52, adopt electron beam welding technology that pedestal case lid 52 and pedestal casing 51 are welded, just formed this sensor.
Claims (8)
1. differential piesoelectric two dimension acceleration sensor, this sensor comprises the inertial mass of insulation, be fitted in and have an electrode (82 on this inertial mass, 81) piezoelectric element, and the pedestal that this inertial mass and piezoelectric element are installed, it is characterized in that, described inertial mass (1) is a square, this inertial mass (1) is installed in the inner chamber of a cubical wafer orientation frame (2), this wafer orientation frame (2) inner chamber is that its degree of depth and this inertial mass (1) are contour, and the cubic chamber that all the other inner cavity sizes equate with this inertial mass (1), inside and outside two cubical vertical pivots of this wafer orientation frame (2) are overlapping and its corresponding surface is parallel; Described piezoelectric element is the quartz wafer (31,32,33,34) that four walls with this wafer orientation frame (2) have XO ° of cut type of same thickness, their (31,32,33,34) are embedded in the wall of this wafer orientation frame (2) with electrode (82,81) state up, and the axial opposed of every pair of relative quartz wafer (31 and 33,32 and 34) sensitivity; All be fitted with the force-transmitting block (4) of each a slice insulation in the outside of this four bauerites wafer (31,32,33,34); Described pedestal is made up of the casing (51) and the case lid (52) of a cube shaped, packed into inertial mass (1), wafer orientation frame (2) and four force-transmitting blocks (4) of four bauerite wafers (31,32,33,34) are installed in this casing (51), and the pretension screw (6) that heads on each force-transmitting block (4) is all arranged on the wall of this pedestal casing; One end is arranged by signal lead (61) and described electrode (82,81) connects, the other end connects with the differential type charge amplifier connection plug (7) on the described case lid (52).
2. differential piesoelectric two dimension acceleration sensor according to claim 1, it is characterized in that all there is a relatively long relative electrode (82,81) than weak point with that all is positioned in the middle of its top on the two sides of described four bauerite wafers (31,32,33,34); The signal lead (61) that electrode (82,81) the corresponding cross wiring grooves (11) that its opening and each quartz wafer (31,32,33,34) are arranged on the top of described inertial mass (1), an end connect each electrode (82,81) is pooled to the back, place, point of crossing of this cross wiring groove (11), connects with the described plug (7) that connects.
3. differential piesoelectric two dimension acceleration sensor according to claim 1 and 2, it is characterized in that it is parallel with the obverse limit of described inertial mass (1) but less than this obverse square that described four bauerite wafers (31,32,33,34) are its four limit; Described force-transmitting block (4) equates with the height of described wafer orientation frame (2), equates with the nominal size of described quartz wafer (31,32,33,34) width and overlapping fully but the upper deviation its width value is not more than the lower deviation of quartz wafer (31,32,33,34).
4. differential piesoelectric two dimension acceleration sensor according to claim 1 and 2, it is characterized in that, described inertial mass (1) is made by the high desnity metal material that its outside surface is coated with the teflon insulation layer, and described wafer orientation frame (2) is made by polytetrafluoroethylmaterial material.
5. differential piesoelectric two dimension acceleration sensor according to claim 1 and 2, it is characterized in that, the little 1～2mm of height, all the other correspondingly-sized and the locating rack cavity volume that this wafer orientation frame (2) equates that the described wafer orientation frame of its depth ratio (2) is arranged in the described pedestal respectively have the big 0.5～1mm of thickness of a described force-transmitting block of its depth ratio (4), force-transmitting block (4) locating slot that its width equates with this force-transmitting block (4) on the wall of this cavity volume; Described case lid (52) is that the contact condition of pure spacing property is fixed on the casing (51) of its pedestal with its bottom surface and described wafer orientation frame (2) end face.
6. differential piesoelectric two dimension acceleration sensor according to claim 3, it is characterized in that, described inertial mass (1) is made by the high desnity metal material that its outside surface is coated with the teflon insulation layer, and described wafer orientation frame (2) is made by polytetrafluoroethylmaterial material.
7. differential piesoelectric two dimension acceleration sensor according to claim 3, it is characterized in that, the little 1～2mm of height, all the other correspondingly-sized and the locating rack cavity volume that this wafer orientation frame (2) equates that the described wafer orientation frame of its depth ratio (2) is arranged in the described pedestal respectively have the big 0.5～1mm of thickness of a described force-transmitting block of its depth ratio (4), force-transmitting block (4) locating slot that its width equates with this force-transmitting block (4) on the wall of this cavity volume; Described case lid (52) is that the contact condition of pure spacing property is fixed on the casing (51) of its pedestal with its bottom surface and described wafer orientation frame (2) end face.
8. differential piesoelectric two dimension acceleration sensor according to claim 4, it is characterized in that, the little 1～2mm of height, all the other correspondingly-sized and the locating rack cavity volume that this wafer orientation frame (2) equates that the described wafer orientation frame of its depth ratio (2) is arranged in the described pedestal respectively have the big 0.5～1mm of thickness of a described force-transmitting block of its depth ratio (4), force-transmitting block (4) locating slot that its width equates with this force-transmitting block (4) on the wall of this cavity volume; Described case lid (52) is that the contact condition of pure spacing property is fixed on the casing (51) of its pedestal with its bottom surface and described wafer orientation frame (2) end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100544186A CN100416274C (en) | 2006-07-06 | 2006-07-06 | Differential piesoelectric two dimension acceleration sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100544186A CN100416274C (en) | 2006-07-06 | 2006-07-06 | Differential piesoelectric two dimension acceleration sensor |
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| CN1900724A true CN1900724A (en) | 2007-01-24 |
| CN100416274C CN100416274C (en) | 2008-09-03 |
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| CNB2006100544186A Expired - Fee Related CN100416274C (en) | 2006-07-06 | 2006-07-06 | Differential piesoelectric two dimension acceleration sensor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520210A (en) * | 2011-12-28 | 2012-06-27 | 重庆大学 | Piezoelectric six-dimensional acceleration sensor |
| CN103018488A (en) * | 2012-12-06 | 2013-04-03 | 重庆大学 | Differential piezoelectric type three-dimensional acceleration sensor |
| CN105092136A (en) * | 2015-05-13 | 2015-11-25 | 宜春学院 | Underground quartz resonant pressure sensor |
| CN105353168A (en) * | 2015-12-07 | 2016-02-24 | 南京林业大学 | Preload type six-dimensional acceleration transducer and fault self-diagnosis method thereof |
| CN107661619A (en) * | 2017-10-25 | 2018-02-06 | 上海长海医院 | A kind of naval officers and men for adapting to unstable ship environment moves integrated system apparatus |
| CN109642202A (en) * | 2016-06-29 | 2019-04-16 | 通用电气公司 | The method and apparatus of closed system culture for cartilaginous tissue |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0316498B1 (en) * | 1987-11-09 | 1992-03-04 | Vibro-Meter Sa | Accelerometer |
| JPH08201161A (en) * | 1995-01-27 | 1996-08-09 | Fujikura Ltd | Piezoelectric vibration sensor |
| CN2303298Y (en) * | 1997-05-05 | 1999-01-06 | 南京理工大学 | Two direction high g value acceleration sensor |
| CN2515682Y (en) * | 2001-11-30 | 2002-10-09 | 中国科学院上海硅酸盐研究所 | Shearing insulating piezoelectric accelerometer |
-
2006
- 2006-07-06 CN CNB2006100544186A patent/CN100416274C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520210A (en) * | 2011-12-28 | 2012-06-27 | 重庆大学 | Piezoelectric six-dimensional acceleration sensor |
| CN102520210B (en) * | 2011-12-28 | 2013-11-06 | 重庆大学 | Piezoelectric six-dimensional acceleration sensor |
| CN103018488A (en) * | 2012-12-06 | 2013-04-03 | 重庆大学 | Differential piezoelectric type three-dimensional acceleration sensor |
| CN105092136A (en) * | 2015-05-13 | 2015-11-25 | 宜春学院 | Underground quartz resonant pressure sensor |
| CN105092136B (en) * | 2015-05-13 | 2017-11-03 | 宜春学院 | underground quartz resonance pressure sensor |
| CN105353168A (en) * | 2015-12-07 | 2016-02-24 | 南京林业大学 | Preload type six-dimensional acceleration transducer and fault self-diagnosis method thereof |
| CN105353168B (en) * | 2015-12-07 | 2018-07-31 | 南京林业大学 | A kind of pre-tensioned type six-dimension acceleration sensor and its fault self-diagnosis method |
| CN109642202A (en) * | 2016-06-29 | 2019-04-16 | 通用电气公司 | The method and apparatus of closed system culture for cartilaginous tissue |
| CN107661619A (en) * | 2017-10-25 | 2018-02-06 | 上海长海医院 | A kind of naval officers and men for adapting to unstable ship environment moves integrated system apparatus |
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