CN1888128A - ZnO:Zn film preparing process - Google Patents
ZnO:Zn film preparing process Download PDFInfo
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- CN1888128A CN1888128A CN 200610088981 CN200610088981A CN1888128A CN 1888128 A CN1888128 A CN 1888128A CN 200610088981 CN200610088981 CN 200610088981 CN 200610088981 A CN200610088981 A CN 200610088981A CN 1888128 A CN1888128 A CN 1888128A
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- zno
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- anchor clamps
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Abstract
The preparation process of ZnO:Zn film includes the following steps: setting ZnO powder inside alumina or quartz boat and calcining inside tubular furnace filled with mixed weak reducing gas of N2 and H2 and at 700-800 deg.c; setting one device with held substrate in the edge of holding section at the exhaust end of the tubular furnace and with gas or water flow for proper temperature; depositing the evaporated ZnO on the substrate in relatively low temperature, and turning off the power to the tubular furnace to obtain the ZnO:Zn film after cooling. The ZnO:Zn film can emit green light and has firm combination with the substrate.
Description
Technical field
The present invention relates to a kind of preparation method of the ZnO:Zn of preparation film.
Background technology
ZnO is as a kind of wide bandgap semiconductor, be widely used in fields such as air-sensitive, pressure-sensitive, ultraviolet detection, light catalytic purifyings, its superior characteristics of luminescence makes it receive more and more widely concern as a kind of luminescent material, and the preparation of film and performance study are the focuses of research at present.The preparation method of ZnO:Zn film mainly contains chemical vapour deposition, magnetron sputtering, molecular beam epitaxy, pulsed laser deposition, electron beam evaporation etc., though these methods can the good film of obtained performance, but need expensive equipment and complicated vacuum system, thereby preparation cost is higher.
Summary of the invention
Technology of the present invention is dealt with problems: a kind of ZnO:Zn method for manufacturing thin film is provided, and this method can overcome the deficiency that existing method needs expensive device and vacuum system, thus the ZnO:Zn film that simple acquisition fast and substrate are combined closely.
Technical solution of the present invention: a kind of preparation method of ZnO:Zn film, its characteristics are: ZnO powder is contained in aluminum oxide or the quartz boat, places tube furnace to calcine, fill N in the tube furnace
2And H
2The blended reducing gas, the temperature regulation in the pipe is between 700～800 ℃; Exhaust side heat preservation zone edge at tube furnace, placement can the clamping substrate device, on the colder substrate that is deposited on after the evaporation of the ZnO in the stove on the anchor clamps, close tube furnace, promptly can obtain the ZnO:Zn film of emitting bright visible light under uviolizing after the cooling.
The device of described clamping substrate can be from extraneous circulated gases or water, thus the temperature that can regulate substrate, and the performance of the film that regulation and control obtain.
The present invention's advantage compared with prior art is: do not need expensive equipment and complicated vacuum system, utilize simple device just can obtain luminosity height, and the compact ZnO:Zn film of substrate.
Description of drawings
Figure 1 shows that the present invention prepares the setting drawing of ZnO:Zn film;
Fig. 2 is the synoptic diagram of anchor clamps among Fig. 1;
Fig. 3 is exciting-emmission spectrum of ZnO:Zn film;
Fig. 4 is the SEM figure of ZnO:Zn film.
Embodiment
As shown in Figure 1, the setting drawing of preparation ZnO:Zn film is by boiler tube 1, process furnace silk 2, aluminum oxide or quartz boat 3, substrate fixture 4, N
2+ H
2The cooling fluid inlet 7 of mixed gas inlet 5, mixed gas venting port 6, anchor clamps and fluid outlet 8 are formed.
As shown in Figure 2, be the synoptic diagram of substrate fixture 4, A is an end of the most close burner hearth heat preservation zone of anchor clamps, and by three little hook fixed substrates, substrate is vertically placed; B is the part of cooling fluid turnover pipe near the A end, and in order to increase the contact area with substrate, B place cooling tube is pressed into plane, substrate level placement herein.
The present invention is described in more detail below in conjunction with embodiment
Embodiment 1
ZnO powder is packed in the quartz boat, in the boiler tube 1 of the tube furnace of packing into then, film substrate is placed the A place of substrate fixture 4, then anchor clamps 4 are placed boiler tube heat preservation zone edge.The airtight back of boiler tube is fed N
2, treat to charge into H after the air emptying in the boiler tube
2, make to keep weakly reducing atmosphere to get final product in the pipe.Tube furnace is heated to 700 ℃, and ZnO evaporates, and feeds the N of room temperature from the inlet mouth of anchor clamps 4
2, the substrate on the anchor clamps 4 is lower than the temperature of steam in the stove, and ZnO steam will deposit at substrate surface like this, is incubated and closes the tube furnace power supply after 1 hour, continues to feed N
2+ H
2Mixed gas when treating that temperature is lower than 200 ℃ in the stove, takes out anchor clamps, can obtain and the compact ZnO:Zn film of substrate.The green light of the film emitting bright under uviolizing that obtains, its emmission spectrum as shown in Figure 3.
As shown in Figure 1, ZnO powder is packed in the aluminium oxide boat, places in the tube furnace, and tube furnace is heated to 750 ℃, fills N in the stove
2+ H
2Mixed gas places the B place of anchor clamps with film substrate, then anchor clamps is placed the heat preservation zone edge, feeds the Ar gas of room temperature from the inlet mouth of anchor clamps, be incubated and closes the tube furnace power supply after 2 hours, continues feeding N
2+ H
2Mixed gas when treating that temperature is lower than 400 ℃ in the stove, takes out anchor clamps, can obtain and the compact ZnO:Zn film of substrate.The green light of the film emitting bright under uviolizing that obtains, single-phase for ZnO, the SEM picture as shown in Figure 4.
As shown in Figure 1, ZnO powder places in the tube furnace, and tube furnace is heated to 800 ℃, fills N in the stove
2+ H
2Mixed gas places the B place of anchor clamps with film substrate, then anchor clamps is placed the heat preservation zone edge, feeds the Ar gas of room temperature from the inlet mouth of anchor clamps, be incubated and closes the tube furnace power supply after 2 hours, continues feeding N
2+ H
2Mixed gas when treating that temperature is lower than 300 ℃ in the stove, takes out anchor clamps, can obtain and the compact ZnO:Zn film of substrate.The green light of the film emitting bright under uviolizing that obtains, for ZnO single-phase.
Claims (2)
1, a kind of preparation method of ZnO:Zn film is characterized in that: ZnO powder is contained in aluminum oxide or the quartz boat, places tube furnace to calcine, fill N in the tube furnace
2And H
2The blended reducing gas, the temperature regulation in the pipe is between 700～800 ℃; Exhaust side heat preservation zone edge at tube furnace, placement can the clamping substrate device, on the colder substrate that is deposited on after the evaporation of the ZnO in the stove on the anchor clamps, close tube furnace, promptly can obtain the ZnO:Zn film of emitting bright green light under uviolizing after the cooling.
2, the preparation method of ZnO:Zn film according to claim 1 is characterized in that: the device of described clamping substrate, can be from extraneous circulated gases or water, thus the temperature that can regulate substrate, and the performance of the film that regulation and control obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100889815A CN100507069C (en) | 2006-07-28 | 2006-07-28 | ZnO:Zn film preparing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100889815A CN100507069C (en) | 2006-07-28 | 2006-07-28 | ZnO:Zn film preparing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1888128A true CN1888128A (en) | 2007-01-03 |
| CN100507069C CN100507069C (en) | 2009-07-01 |
Family
ID=37577414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100889815A Expired - Fee Related CN100507069C (en) | 2006-07-28 | 2006-07-28 | ZnO:Zn film preparing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100507069C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107376956A (en) * | 2017-08-22 | 2017-11-24 | 深圳大学 | A kind of zinc oxide/red phosphorus heterojunction composite photocatalyst and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100233998B1 (en) * | 1995-11-04 | 1999-12-15 | 박호군 | Fluorescent material for field emission device and manufacturing method thereof |
| US6887736B2 (en) * | 2002-06-24 | 2005-05-03 | Cermet, Inc. | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
| CN1278385C (en) * | 2003-03-25 | 2006-10-04 | 浙江大学 | P-ZnO thin film and preparation thereof |
| CN1789139A (en) * | 2005-12-29 | 2006-06-21 | 大连理工大学 | Method for directional growth of zinc oxide nano-belt |
-
2006
- 2006-07-28 CN CNB2006100889815A patent/CN100507069C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107376956A (en) * | 2017-08-22 | 2017-11-24 | 深圳大学 | A kind of zinc oxide/red phosphorus heterojunction composite photocatalyst and preparation method thereof |
| CN107376956B (en) * | 2017-08-22 | 2020-02-11 | 深圳大学 | Zinc oxide/red phosphorus heterojunction composite photocatalyst and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN100507069C (en) | 2009-07-01 |
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