CN1877866B - Semiconductor photoconductive switch and method for fabricating same - Google Patents
Semiconductor photoconductive switch and method for fabricating same Download PDFInfo
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- CN1877866B CN1877866B CN2006100213323A CN200610021332A CN1877866B CN 1877866 B CN1877866 B CN 1877866B CN 2006100213323 A CN2006100213323 A CN 2006100213323A CN 200610021332 A CN200610021332 A CN 200610021332A CN 1877866 B CN1877866 B CN 1877866B
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- contact layers
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Abstract
The invention discloses a semiconductor photoelectric conductance switch, which is characterized by the following: the semiconductor element enlarges the cross-section area of present switch conductance, which improves uniformity of transmission current; the doping contact layers (4), (5) are set on the upper and lower surfaces (2), (3) of substrate (1), whose longitudinal cross section among inner end length L is tilted current transmission plane Sc; the electrodes (6), (7) with refractory metal layer are set on the doping contact layers (4), (5) separately, which contains electrode leads (8), (9); the upper and lower steps (13), (14) are set on the upper and lower surfaces (2), (3) of substrate (1) separately with doping contact layers (4), (5) covering the surface of steps (13), (14).
Description
Technical field:
The present invention relates in high-power, high voltage, ultra broadband, ultrashort, electromagnetic pulse microwave source and electronic circuit, to be used as the semiconductor device of ultrafast switch.
Background technology:
The ultrashort electromagnetic pulse microwave source of high power, the ultra-wideband pulse generator, constantly the demand conversion is fast in the systems such as prompt radiation ELECTROMAGNETIC WEAPON, shakes for a short time, is not subjected to the high-power high-gain high-speed switching arrangement of electromagnetic interference high-repetition-rate work.Semiconductor optoelectronic is led switch (PCSS) and is being represented and have the new class switching device that satisfies these potentials of demand.In order to simplify, this class switching device is called as PCSS.
PCSS utilizes ultrafast pulse laser to combine with optoelectronic semiconductor and the new device that forms.Its basic principle is to utilize ultrashort laser pulse to produce electronics one hole to realizing the light modulation to material electric conductivity in the optoelectronic semiconductor backing material.Photoelectric semiconductor material presents high conductivity during optical pulse irradiation, and after the light pulse, the resistance of semi-conducting material just returns to high-impedance state.The conversion that this electricity is led is same as the regular tap device and is transformed into off state from closure state.A kind of PCSS[1 of prior art] as indicated in Fig. 1, PCSS 100 comprises:
High resistivity semiconductor is (as GaAs, InP etc.) substrate 102, on two surfaces 104 and 106 of this substrate, form multilayer refractory metal ohmic contact layer 118 and 120 (abbreviating plane electrode as), the space G (116) that is clipped between 118 and 120 is the external series gap of PCSS, can add dc high voltage between the metal extraction electrode 122 and 124.The surface 104 and 106 in substrate 102 its gaps 116 is parallel horizontal surfaces, the distance between the metal contact layer 118 and 120 (being the length in gap) L
GFrom 0.2mm to 3cm.The resistivity size and the length of LG of high resistance substrate 102 has determined the high voltage ability to bear of 100 photoconductive switchs.
For example 3XE7 Ω CnGaAs material is made PCSS, works as L
GDuring=2.5mm, can bear 30000 volts dc high voltage between 118 and 120 liang of electrodes, in 116 districts during the no pulse laser radiation, its isolation resistance R
GCan be up to hundreds of megohms, 100 photoconductive switchs are in＜open circuit〉state.During 116 usefulness ultrafast pulse laser radiations, utilizing the quick response characteristic of PCSS in the gap, 100 photoconductive switchs are in＜closed circuit (being conducting) state.Under the situation of load matched, obtain the High-Power Microwave output of nanosecond (ns) or psec (ps) level rise and fall time.It with wavelength the modulation that the ultrafast pulse laser of 800～904nm is realized the Semiconductor substrate material electric conductivity from the top surface 104 single directions irradiation driving switch device 100 of 102 substrates, the conventional structure switch has psec (ps) level rising/fall time, the repetition rate of GHz, high pressure resistant and big current carrying capacity, at the ultrashort electromagnetic pulse microwave source of high power, ultra-wideband pulse generator isopulse power system is used widely.In the photoconductive switch of this conventional structure, 116 interstitial area internal electric fields present non-uniform Distribution.Photoirradiated surface 104 internal fields concentrate the place, are prone to the low-voltage surface and hit case, and current concentration appears in 118 Ohm contact electrodes and 116 gap intersection C.Thread transmission current between 118 and 120 electrodes, occurs, can cause the degeneration of electrode contact and the damage in the semiconductor.In this class switch, the longitudinal cross-section Sc of current delivery is narrow and small, and the uniformity of switch conduction is relatively poor, does not have heat sink device, and the heat dissipation in the light-guide material is restricted.Exist withstand voltage not highly with the photoconductive switch 100 of the conventional structure of prior art manufacturing, thermal stability is bad, and the short weak point of switch life needs to improve.
200 switching devices shown in Figure 3 [2] conventional structure that has been 100 improvement is Fig. 1,2 a kind of improved prior art shown in Fig. 3,4.Content shown in each digital marking identical with Fig. 1 (for example 202 and 102,216 and 116,218 and 118 among Fig. 3 ...).In 200, increased by 226 and 228, n+ or p+ doped contact layers, because 200 employing n+-i-p+ or n+-i-n+ structures are eased the current concentration at 100 structure C places, there are improvement in uniformity and life-span that Sc, switch conduction are amassed in the electric current longitudinal cross-section.But the plane of illumination of 216 interstitial areas and Metal Contact electrode 218 remain and are in same horizontal surface (abbreviating plane electrode as), the interstitial area internal electric field is non-uniform Distribution, thread electric current, factors such as the longitudinal cross-section Sc of photoconductive switch conducting current delivery is little, and thermal capacity is little still exist the high-voltage resistance capability, long service live, the thermal stability that make photoconductive switch to be restricted.Such needs are still arranged, and photoconductive switch interstitial area internal electric field is evenly distributed, and thread current expansion is the uniform plane transmission current, and photoconductive switch current lead-through sectional area increases several times to tens of times of magnitudes, and thermal capacity has the increase of an order of magnitude.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor optoelectronic and lead switch, it have high pressure resistant, the life-span is long, the characteristics that thermostability is high.
Another purpose of the present invention provides the manufacture method that above-mentioned semiconductor optoelectronic is led switch.
The present invention is achieved in that
Semiconductor optoelectronic of the present invention is led switch, upper and lower surperficial 2,3 of substrate 1 respectively has the current delivery face Sc of longitudinal cross-section for tilting between 4,5 liang of doped contact layers 4,5 inner length L of doped contact layers, have on the doped contact layers 4,5 on electrode that the infusibility metal contact layer constitutes, the refractory metal contact layer electrode contact conductor 8,9 is respectively arranged, upper and lower surperficial 2,3 of substrate 1 respectively has obliquely, gets out of a predicament or an embarrassing situation 13,14, doped contact layers 4,5 covers step 13,14 surfaces, and doped contact layers 4,5 inner length are the diagonal length of step 13,14.
Step and electrode angle are α, 90 °＜180 °.Preferred 100 °＜α＜150 °.
The plane of upper and lower step 13,14 for being parallel to each other.
Doped contact layers 4,5 is respectively n, p doped layer, is respectively the negative electrode of photoconductivity switching and the part of positive electrode.
The height H of upper and lower step 13,14
GBe the 1-200 micron.Preferred 50-100 micron.
The level interval L of upper and lower step 13,14
GBe 0.1-50mm.
The intersection of upper and lower step 13,14 and horizontal plane is straight line or curve.
The upper and lower surface of substrate 1 has at least one side closely to be connected with the potsherd 11 of band light hole 10.
9, semiconductor optoelectronic is led the switch manufacture method, comprises the steps:
A. at step of each etching of the upper and lower surface of substrate 1, substrate 1 is a single crystal semiconductor, and step is made of the inclined-plane, and the inclined-plane is plane or curved surface, with horizontal plane angle be definite value, two steps are parallel,
B. form the n doped contact layers on the step top layer of upper surface with 800 ℃ of hot expansion methods, under 500 ℃, the step of lower surface diffuses to form the P doped contact layers with the Zn steam heat, perhaps injects with thermal annealing method with ion to form n and P doped contact layers respectively at upper and lower surface step
C. deposit multilayer refractory metal forms contact layer on the horizontal plane of n and P doped contact layers, constitutes the yin, yang electrode with doped contact layers respectively.
At least one face in the upper and lower surface of substrate 1 closely connects the AIN potsherd that has light hole.
It is simple, easy to manufacture, with low cost that semiconductor optoelectronic of the present invention is led construction of switch, and the current lead-through longitudinal cross-section is long-pending big, and electric current transmits between electrode evenly, and Heat stability is good is high pressure resistant, long service life.
Description of drawings:
Fig. 1 illustrates the front view of prior art PCSS.
Fig. 2 is the vertical view of the PCSS of prior art.
Fig. 3 is a kind of front view of improved prior art.
Fig. 4 is the vertical view of Fig. 3
Fig. 5 is a front view of the present invention.
Fig. 6 is the vertical view of Fig. 5.
Fig. 7 is the left view of Fig. 5.
Fig. 8 is a structure chart of the present invention, has comprised the main member of photoconductive switch equipment.
Embodiment:
On the upper surface 2 of high resistivity semiconductor substrate 1 and lower surface 3 each etching an antarafacial step 13,14, and mix dissimilar impurity in stepped region, form metal ohmic contact electrode 6,7 in the bottom of doping step then, finish the PCSS chip manufacturing.The PCSS chip has at least a surface closely to be connected with ceramic heat sink 11 then.Diode laser matrix shines directly on the step from two-sided through the optical fiber coupling, drives the photoconductive switch device.
The present invention has following advantage compared with the PCSS of prior art. at first, form the parallel plane electric field that evenly distributes in the gap isolation regions between two antarafacial step electrode, photoconductive switch conducting electric current longitudinal cross-section increases more than 5 times, photoconductive switch conducting electric current can be eliminated current concentration by the thread uniform planar shape that expands to.
It is minimum that " LOCK-ON " effect also can be reduced to.Thermal capacity increases about order of magnitude.
With reference to figure 5 and Fig. 6, the present invention includes a high resistivity semiconductor substrate 1, it has upper surface 2 and lower surface 3, substrate 1 comprises two steps 13 and 14 that are etched on upper surface 2 and the lower surface 3, step 13,14 its shapes are identical, area equates that step 13,14 abbreviates the antarafacial step as in following expression.Among Fig. 6, step 14 is zones that the with dashed lines polygon is limited.On the substrate 1, the space between the step 13,14 is called gap isolation regions.In the zone that two antarafacial steps are selected, mix dissimilar impurity, constitute doped contact layers 4,5, in the zone that doped contact layers 4,5 is selected on substrate 1, make metal ohmic contact layer 6,7.On the ohmic contact layer electrode on the substrate 16,7, contact conductor 8,9 is arranged.
The present invention includes 2 ceramic substrates 11, respectively have the hole 12 of a printing opacity in the ceramic substrate central area, the shape in hole is not limited in rectangle or rectangle.Laser driven light source 15 can be Nd:YAG laser, perhaps diode laser matrix.
The height H of etch step on substrate 1
GBe the 1-200 micron.
On the substrate 1, etch step 13,14, step 13,14 and electrode 6,9.Angle α is 100-170 °.
Gap isolation regions length L between two antarafacial steps
G(two step top level intervals) is 0.1-50mm.
Optoelectronic switch of the present invention is made like this: at first the upper surface 2 of etch substrate 1 is to set up a step 13, then with double-sided alignment exposure technique step 14 of lower surface 3 etchings at substrate 1.Two step top distances in the horizontal direction are L
G, L
GLength can be about 4 millimeters.The height H of two antarafacial steps
GCan be 100 microns, two antarafacial steps and electrode holder degree can be 50 °, the width W of two antarafacial steps
G(step is seen Fig. 6 in the longitudinal axis projection of substrate 1) and height H
GNumerical value can be because of the photoconductive switch of making different size, the photoconductive switch (for example big current type, high voltage type etc.) of different purposes, the backing material difference of use, the combination in any of these or other factors and very big variation is arranged.Substrate 1 can be GaAs or other suitable material.In the present invention, substrate 1 has adopted semi-insulating GaAs (SI-GaAs) monocrystal material, about 3E7 to the 8E7 ohmcm of its resistivity.[100] crystal orientation, about 650 microns of the thickness of GaAs garden sheet, the sheet twin polishing of GaAs garden.In one embodiment of the invention, adopt SI-GaAs at substrate 1, NH is adopted in the etching of two step
4OH: H
2O
2==1: (100-1000) wet etching of volume ratio, also can use dry etching.Secondly the Si that is about 1000 dusts with thickness
3N
4Film is made the diffusion barrier of sheltering of impurity, cathodic region at photoconductive switch, for example Fig. 5 stepped region is carried out Si impurity with 800 ℃ of thermal diffusion methods, form the n+ doped contact layers in step 13 zones, anode region at photoconductive switch, under about 500 ℃ of temperature, be diffused in stepped region 14 with the zn steam heat and form the p+ doped contact layers.In stepped region, make n and p doped contact layers, also can inject and the formation of thermal annealing technology with ion.Step 13,14 becomes the negative electrode of photoconductive switch PCSS and the important component part of positive electrode after mixing by n and p.Electric field between the inclined-plane battery lead plate of two antarafacial step inclinations constitutes the planopaallel plate uniform electric field.The height H of battery lead plate step
GBig more, PCSS current lead-through cross section Sc is just big more, electric current evenly transmission between battery lead plate 13 and 14 during switch conduction.
In this example, the penetrable battery lead plate 13 of PCSS driving light source and 14 makes the photo-generated carrier generation rate obtain to improve at interstitial area, and has electronics and holoe carrier to enter interstitial area with electric injection mode respectively from negative electrode 4 and the anode 5 of PCSS.The additional information of the technology of relevant manufacturing remainder of the present invention finds in prior art [1], [2].
According to top described, that the present invention will cause will be withstand voltage at height, manufacturing and the practical application of better PCSS on long-life, thermal stability.Though top explanation has also shown example of the present invention (antarafacial electrode PCSS), particular form and the wherein arrangement of parts that the present invention is not limited to so explanation and shows, for example the present invention can be applied in the lateral electrodes PCSS device of plane.
Claims (9)
1. semiconductor optoelectronic is led switch, on the substrate (1), lower surface (2), (3) doped contact layers (4) is respectively arranged, (5), two doped contact layers (4), (5) the current delivery face Sc of the longitudinal cross-section between the inner length L for tilting, doped contact layers (4), (5) electrode that has the infusibility metal contact layer to constitute on, contact conductor (8) is respectively arranged on the refractory metal contact layer electrode, (9), it is characterized in that substrate (1) on, lower surface (2), (3) respectively have obliquely, get out of a predicament or an embarrassing situation (13), (14), doped contact layers (4), (5) cover step (13), (14) surface, doped contact layers (4), (5) inner length is step (13), (14) diagonal length.
2. semiconductor optoelectronic according to claim 1 is led switch, it is characterized in that step and electrode angle are α, 90 °＜α＜180 °.
3. semiconductor optoelectronic according to claim 1 is led switch, it is characterized in that upper and lower step (13), (14) plane for being parallel to each other.
4. semiconductor optoelectronic according to claim 1 is led switch, it is characterized in that doped contact layers (4), (5) are respectively n, p doped layer, are respectively the negative electrode of photoconductivity switching and the part of positive electrode.
5. semiconductor optoelectronic according to claim 1 is led switch, and the height H G that it is characterized in that upper and lower step (13), (14) is the 1-200 micron.
6. semiconductor optoelectronic according to claim 1 is led switch, and the level interval LG that it is characterized in that upper and lower step (13), (14) is 0.1-50mm.
7. semiconductor optoelectronic according to claim 1 is led switch, it is characterized in that upper and lower step (13), (14) are straight line or curve with the intersection of horizontal plane.
8. semiconductor optoelectronic according to claim 1 is led switch, it is characterized in that the upper and lower surface of substrate (1) has at least one side closely to be connected with the potsherd (11) of band light hole (10).
9. semiconductor optoelectronic is led the switch manufacture method, comprises the steps:
A. at step of each etching of the upper and lower surface of substrate (1), substrate (1) is a single crystal semiconductor, and step is made of the inclined-plane, and the inclined-plane is plane or curved surface, with horizontal plane angle be definite value, two steps are parallel,
B. form the n doped contact layers on the step top layer of upper surface with 800 ℃ of hot expansion methods, under 500 ℃, the step of lower surface diffuses to form the P doped contact layers with the Zn steam heat, perhaps injects with thermal annealing method with ion to form n and P doped contact layers respectively at upper and lower surface step
C. deposit multilayer refractory metal forms contact layer on the horizontal plane of n and P doped contact layers, constitutes the yin, yang electrode with doped contact layers respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100213323A CN1877866B (en) | 2006-07-06 | 2006-07-06 | Semiconductor photoconductive switch and method for fabricating same |
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| CN2006100213323A CN1877866B (en) | 2006-07-06 | 2006-07-06 | Semiconductor photoconductive switch and method for fabricating same |
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| CN1877866B true CN1877866B (en) | 2010-07-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11804839B1 (en) | 2020-01-28 | 2023-10-31 | Government Of The United States As Represented By The Secretary Of The Air Force | Integrated trigger photoconductive semiconductor switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117155368A (en) * | 2017-08-29 | 2023-12-01 | 意法半导体有限公司 | Integrated optical switch |
| CN112382923B (en) * | 2021-01-11 | 2021-03-23 | 武汉敏芯半导体股份有限公司 | Electroabsorption modulated laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5227621A (en) * | 1992-09-18 | 1993-07-13 | The United States Of America As Represented By The Secretary Of The Army | Ultra-wideband high power photon triggered frequency independent radiator |
| US5804815A (en) * | 1996-07-05 | 1998-09-08 | Sandia Corporation | GaAs photoconductive semiconductor switch |
| US5912455A (en) * | 1996-06-07 | 1999-06-15 | Thomson-Csf | Photoconductor-based electrical switch |
| US6248992B1 (en) * | 1999-06-18 | 2001-06-19 | Sandia Corporation | High gain photoconductive semiconductor switch having tailored doping profile zones |
-
2006
- 2006-07-06 CN CN2006100213323A patent/CN1877866B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5227621A (en) * | 1992-09-18 | 1993-07-13 | The United States Of America As Represented By The Secretary Of The Army | Ultra-wideband high power photon triggered frequency independent radiator |
| US5912455A (en) * | 1996-06-07 | 1999-06-15 | Thomson-Csf | Photoconductor-based electrical switch |
| US5804815A (en) * | 1996-07-05 | 1998-09-08 | Sandia Corporation | GaAs photoconductive semiconductor switch |
| US6248992B1 (en) * | 1999-06-18 | 2001-06-19 | Sandia Corporation | High gain photoconductive semiconductor switch having tailored doping profile zones |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11804839B1 (en) | 2020-01-28 | 2023-10-31 | Government Of The United States As Represented By The Secretary Of The Air Force | Integrated trigger photoconductive semiconductor switch |
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| CN1877866A (en) | 2006-12-13 |
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