CN1865527A - Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof - Google Patents
Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof Download PDFInfo
- Publication number
- CN1865527A CN1865527A CN 200610060337 CN200610060337A CN1865527A CN 1865527 A CN1865527 A CN 1865527A CN 200610060337 CN200610060337 CN 200610060337 CN 200610060337 A CN200610060337 A CN 200610060337A CN 1865527 A CN1865527 A CN 1865527A
- Authority
- CN
- China
- Prior art keywords
- temperature
- single crystal
- crystal growth
- difference gradient
- precise vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100603377A CN100400720C (en) | 2006-04-21 | 2006-04-21 | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100603377A CN100400720C (en) | 2006-04-21 | 2006-04-21 | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1865527A true CN1865527A (en) | 2006-11-22 |
CN100400720C CN100400720C (en) | 2008-07-09 |
Family
ID=37424667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100603377A Expired - Fee Related CN100400720C (en) | 2006-04-21 | 2006-04-21 | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100400720C (en) |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100557091C (en) * | 2007-11-07 | 2009-11-04 | 华东理工大学 | A kind of micro-reaction device and method of utilizing the thermograde synthesizing cadmium selenide nano-crystal |
CN101319374B (en) * | 2008-05-08 | 2010-07-28 | 刘盛浦 | Optical-level single-sided long quartz crystal growth technique |
CN102061518A (en) * | 2010-11-26 | 2011-05-18 | 中国科学院上海技术物理研究所 | Precise control method for growth starting temperature of mercury cadmium telluride liquid phase epitaxy system |
CN102292477A (en) * | 2009-01-20 | 2011-12-21 | 住友电气工业株式会社 | Electrically conductive gaas crystal, electrically conductive gaas crystal substrate, and processes for producing those materials |
CN101736401B (en) * | 2008-11-10 | 2013-07-24 | Axt公司 | Method and device for growing germanium crystal |
CN104152983A (en) * | 2014-08-01 | 2014-11-19 | 北京雷生强式科技有限责任公司 | Crucible for growing cadmium selenide crystal and growing method of cadmium selenide crystal |
CN104165898A (en) * | 2014-08-21 | 2014-11-26 | 共慧冶金设备科技(苏州)有限公司 | Large-temperature-gradient Bridgman furnace |
CN104313681A (en) * | 2014-11-07 | 2015-01-28 | 中国工程物理研究院化工材料研究所 | Device for growth of multinary compound crystals and application thereof |
CN104404615A (en) * | 2014-12-16 | 2015-03-11 | 中国电子科技集团公司第四十六研究所 | Plane crystal interface control structure for gallium antimonide single crystal growth and use method thereof |
CN104911690A (en) * | 2015-07-01 | 2015-09-16 | 清远先导材料有限公司 | Growing method and growing device for indium phosphide single crystal |
CN105543949A (en) * | 2016-03-10 | 2016-05-04 | 中国电子科技集团公司第十三研究所 | Method for preparing compound semiconductor monocrystal through in-situ injection synthesis and continuous VGF (vertical gradient freezing)/VB (vertical bridgman) growth |
CN105803515A (en) * | 2014-12-29 | 2016-07-27 | 有研光电新材料有限责任公司 | New process for gallium arsenide single crystal growth by VGF |
CN106283176A (en) * | 2016-06-03 | 2017-01-04 | 广东先导稀材股份有限公司 | The grower of a kind of III V race semiconductor crystal and growing method |
CN107268070A (en) * | 2017-06-10 | 2017-10-20 | 中国科学院合肥物质科学研究院 | A kind of method of low absorption phosphorus germanium zinc crystal growth |
CN107313110A (en) * | 2017-06-27 | 2017-11-03 | 台山市华兴光电科技有限公司 | A kind of p type inp single crystal preparation formula and preparation method |
CN108624948A (en) * | 2018-03-30 | 2018-10-09 | 广东先导先进材料股份有限公司 | The grower and growing method of arsenide gallium monocrystal |
CN108821340A (en) * | 2018-09-17 | 2018-11-16 | 大冶市都鑫摩擦粉体有限公司 | A kind of antimony trisulfide purifying plant |
CN109252216A (en) * | 2018-11-19 | 2019-01-22 | 成都斯力康科技股份有限公司 | Control heating thermal field purification prepares the device and technique of polysilicon |
CN109252220A (en) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | A kind of VGF/VB arsenide gallium monocrystal furnace structure and growing method |
CN110512275A (en) * | 2019-09-30 | 2019-11-29 | 山西中科晶电信息材料有限公司 | A kind of large-size crystals growth single crystal growing furnace |
CN110512274A (en) * | 2019-09-30 | 2019-11-29 | 山西中科晶电信息材料有限公司 | A kind of device of the reduction GaAs crystal twin based on VGF method |
CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
CN111020689A (en) * | 2019-12-13 | 2020-04-17 | 广东先导先进材料股份有限公司 | Crystal growth apparatus and method |
CN111809229A (en) * | 2020-06-12 | 2020-10-23 | 安徽光智科技有限公司 | Preparation method and device of indium antimonide single crystal |
CN112176398A (en) * | 2020-10-22 | 2021-01-05 | 云南鑫耀半导体材料有限公司 | Single crystal furnace structure for growing single crystal by VGF method and temperature control method |
CN112680781A (en) * | 2020-12-09 | 2021-04-20 | 清远先导材料有限公司 | Cadmium telluride crystal growth device and growth method thereof |
CN112851090A (en) * | 2021-01-25 | 2021-05-28 | 中天科技精密材料有限公司 | Production equipment and production method of quartz mother tube |
CN113862772A (en) * | 2021-09-27 | 2021-12-31 | 云南北方光学科技有限公司 | Preparation device of germanium window material for large-size infrared optics and method for preparing germanium window material for large-size infrared optics by using preparation device |
CN114808107A (en) * | 2022-03-31 | 2022-07-29 | 威科赛乐微电子股份有限公司 | Crystal growth single crystal furnace, crucible and crystal growth method |
CN116536768A (en) * | 2023-06-29 | 2023-08-04 | 浙江珏芯微电子有限公司 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
CN108821340B (en) * | 2018-09-17 | 2024-05-14 | 大冶市都鑫摩擦粉体有限公司 | Antimony sulfide purification device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1485467A (en) * | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | Growth apparatus for large-areaed crystal by temperature gradient technique and crystal growth method thereof |
CN2637505Y (en) * | 2003-08-08 | 2004-09-01 | 中国科学院上海光学精密机械研究所 | Temperature gradient method growing device of large area crystal body |
CN1322172C (en) * | 2004-09-06 | 2007-06-20 | 周永宗 | Pure static state double heating apparatus for crystal growth by temperature gradient technique |
CN2745959Y (en) * | 2004-09-06 | 2005-12-14 | 周永宗 | Crystal growing device by biheating temperature gradient method |
-
2006
- 2006-04-21 CN CNB2006100603377A patent/CN100400720C/en not_active Expired - Fee Related
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100557091C (en) * | 2007-11-07 | 2009-11-04 | 华东理工大学 | A kind of micro-reaction device and method of utilizing the thermograde synthesizing cadmium selenide nano-crystal |
CN101319374B (en) * | 2008-05-08 | 2010-07-28 | 刘盛浦 | Optical-level single-sided long quartz crystal growth technique |
CN101736401B (en) * | 2008-11-10 | 2013-07-24 | Axt公司 | Method and device for growing germanium crystal |
US11017913B2 (en) | 2009-01-20 | 2021-05-25 | Sumitomo Electric Industries, Ltd. | Crystal and substrate of conductive GaAs, and method for forming the same |
CN102292477A (en) * | 2009-01-20 | 2011-12-21 | 住友电气工业株式会社 | Electrically conductive gaas crystal, electrically conductive gaas crystal substrate, and processes for producing those materials |
CN102292477B (en) * | 2009-01-20 | 2015-11-25 | 住友电气工业株式会社 | The conduction crystal of GaAs and substrate and their formation method |
US11955251B2 (en) | 2009-01-20 | 2024-04-09 | Sumitomo Electric Industries, Ltd. | Crystal and substrate of conductive GaAs, and method for forming the same |
CN102061518A (en) * | 2010-11-26 | 2011-05-18 | 中国科学院上海技术物理研究所 | Precise control method for growth starting temperature of mercury cadmium telluride liquid phase epitaxy system |
CN104152983A (en) * | 2014-08-01 | 2014-11-19 | 北京雷生强式科技有限责任公司 | Crucible for growing cadmium selenide crystal and growing method of cadmium selenide crystal |
CN104165898A (en) * | 2014-08-21 | 2014-11-26 | 共慧冶金设备科技(苏州)有限公司 | Large-temperature-gradient Bridgman furnace |
CN104313681A (en) * | 2014-11-07 | 2015-01-28 | 中国工程物理研究院化工材料研究所 | Device for growth of multinary compound crystals and application thereof |
CN104404615A (en) * | 2014-12-16 | 2015-03-11 | 中国电子科技集团公司第四十六研究所 | Plane crystal interface control structure for gallium antimonide single crystal growth and use method thereof |
CN104404615B (en) * | 2014-12-16 | 2017-02-08 | 中国电子科技集团公司第四十六研究所 | Plane crystal interface control structure for gallium antimonide single crystal growth and use method thereof |
CN105803515A (en) * | 2014-12-29 | 2016-07-27 | 有研光电新材料有限责任公司 | New process for gallium arsenide single crystal growth by VGF |
CN104911690B (en) * | 2015-07-01 | 2017-09-19 | 清远先导材料有限公司 | The growing method and grower of a kind of indium phosphide single crystal |
CN104911690A (en) * | 2015-07-01 | 2015-09-16 | 清远先导材料有限公司 | Growing method and growing device for indium phosphide single crystal |
CN105543949A (en) * | 2016-03-10 | 2016-05-04 | 中国电子科技集团公司第十三研究所 | Method for preparing compound semiconductor monocrystal through in-situ injection synthesis and continuous VGF (vertical gradient freezing)/VB (vertical bridgman) growth |
CN106283176A (en) * | 2016-06-03 | 2017-01-04 | 广东先导稀材股份有限公司 | The grower of a kind of III V race semiconductor crystal and growing method |
CN106283176B (en) * | 2016-06-03 | 2019-07-02 | 广东先导稀材股份有限公司 | A kind of grower and growing method of Group III-V semiconductor crystal |
CN107268070A (en) * | 2017-06-10 | 2017-10-20 | 中国科学院合肥物质科学研究院 | A kind of method of low absorption phosphorus germanium zinc crystal growth |
CN107313110A (en) * | 2017-06-27 | 2017-11-03 | 台山市华兴光电科技有限公司 | A kind of p type inp single crystal preparation formula and preparation method |
CN107313110B (en) * | 2017-06-27 | 2020-06-09 | 台山市华兴光电科技有限公司 | Preparation formula and preparation method of P-type indium phosphide single crystal |
CN108624948A (en) * | 2018-03-30 | 2018-10-09 | 广东先导先进材料股份有限公司 | The grower and growing method of arsenide gallium monocrystal |
CN108624948B (en) * | 2018-03-30 | 2020-12-25 | 广东先导先进材料股份有限公司 | Gallium arsenide single crystal growth device and growth method |
CN108821340A (en) * | 2018-09-17 | 2018-11-16 | 大冶市都鑫摩擦粉体有限公司 | A kind of antimony trisulfide purifying plant |
CN108821340B (en) * | 2018-09-17 | 2024-05-14 | 大冶市都鑫摩擦粉体有限公司 | Antimony sulfide purification device |
CN109252216A (en) * | 2018-11-19 | 2019-01-22 | 成都斯力康科技股份有限公司 | Control heating thermal field purification prepares the device and technique of polysilicon |
CN109252220A (en) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | A kind of VGF/VB arsenide gallium monocrystal furnace structure and growing method |
CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
CN110512274A (en) * | 2019-09-30 | 2019-11-29 | 山西中科晶电信息材料有限公司 | A kind of device of the reduction GaAs crystal twin based on VGF method |
CN110512275A (en) * | 2019-09-30 | 2019-11-29 | 山西中科晶电信息材料有限公司 | A kind of large-size crystals growth single crystal growing furnace |
CN111020689A (en) * | 2019-12-13 | 2020-04-17 | 广东先导先进材料股份有限公司 | Crystal growth apparatus and method |
CN111809229A (en) * | 2020-06-12 | 2020-10-23 | 安徽光智科技有限公司 | Preparation method and device of indium antimonide single crystal |
CN112176398A (en) * | 2020-10-22 | 2021-01-05 | 云南鑫耀半导体材料有限公司 | Single crystal furnace structure for growing single crystal by VGF method and temperature control method |
CN112680781B (en) * | 2020-12-09 | 2023-10-03 | 清远先导材料有限公司 | Cadmium telluride crystal growth device and growth method thereof |
CN112680781A (en) * | 2020-12-09 | 2021-04-20 | 清远先导材料有限公司 | Cadmium telluride crystal growth device and growth method thereof |
CN112851090B (en) * | 2021-01-25 | 2023-02-28 | 中天科技精密材料有限公司 | Production equipment and production method of quartz mother tube |
CN112851090A (en) * | 2021-01-25 | 2021-05-28 | 中天科技精密材料有限公司 | Production equipment and production method of quartz mother tube |
CN113862772A (en) * | 2021-09-27 | 2021-12-31 | 云南北方光学科技有限公司 | Preparation device of germanium window material for large-size infrared optics and method for preparing germanium window material for large-size infrared optics by using preparation device |
CN114808107A (en) * | 2022-03-31 | 2022-07-29 | 威科赛乐微电子股份有限公司 | Crystal growth single crystal furnace, crucible and crystal growth method |
CN114808107B (en) * | 2022-03-31 | 2024-01-12 | 威科赛乐微电子股份有限公司 | Crystal growth single crystal furnace, crucible and crystal growth method |
CN116536768A (en) * | 2023-06-29 | 2023-08-04 | 浙江珏芯微电子有限公司 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
CN116536768B (en) * | 2023-06-29 | 2023-09-29 | 浙江珏芯微电子有限公司 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
Also Published As
Publication number | Publication date |
---|---|
CN100400720C (en) | 2008-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1865527A (en) | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof | |
CN2885891Y (en) | Temperature control furnace for growth of arsenide gallium monocrystal | |
CN104911690B (en) | The growing method and grower of a kind of indium phosphide single crystal | |
CN101871123B (en) | Method and device for growing cadmium zinc telluride crystals in mobile tellurium solvent melting zone | |
CN107541776A (en) | A kind of growth apparatus and method of large scale gallium oxide single crystal | |
CN101555620A (en) | Crystal growing device and method | |
CN1318662C (en) | CdTe single crystal and CdTe polycrystal, and method for preparation thereof | |
CN101550586B (en) | Growing technique of ZnTe monocrystal | |
CN101736401A (en) | Method and device for growing germanium crystal | |
CN102383184A (en) | Crystal, and method and device for casting same | |
CN1844487A (en) | Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace | |
CN2851293Y (en) | Crystal growing furnace capable of realizing observation of growth state of crystal | |
CN102312280A (en) | Method and device for casting crystal material by using crystal selector | |
CN104846437A (en) | Gallium-doped crystalline silicon with uniformly distributed resistivity and preparation method thereof | |
CN102272361A (en) | Systems, methods and substrates of monocrystalline germanium crystal growth | |
CN103255477B (en) | The growing method of a kind of shaped sapphire crystal and equipment | |
CN204803443U (en) | Heating device for be used for crystal growth | |
CN112680781B (en) | Cadmium telluride crystal growth device and growth method thereof | |
CN101748481B (en) | Method for purifying polycrystalline silicon material | |
CN105133004A (en) | USb2 monocrystal fluxing agent growth method and product prepared in same | |
CN107201548B (en) | The preparation method of zinc telluridse monocrystalline | |
CN205241851U (en) | Single crystal furnace heating system | |
CN1737221A (en) | Process for preparing lead sulfur family compound semiconductor single crystal | |
CN104313681A (en) | Device for growth of multinary compound crystals and application thereof | |
CN101591806A (en) | The preparation method of solar energy Phi 6 inches dislocation-free single crystal silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AIBISITONG SEMICONDUCTOR MATERIALS CO., LTD., SHE Free format text: FORMER OWNER: LUO JIANGUO Effective date: 20080919 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080919 Address after: Guangdong province Shenzhen City District Baolong Baolong Industrial City Jinlong Road No. 8 a long Gang Industrial Park building B1 Patentee after: Shenzhen Audemars Pigeut Stone semiconductor material Co., Ltd. Address before: Longgang District Shenzhen city Guangdong Province Lin Road students Pioneering Park two Park Room 301 Patentee before: Luo Jianguo |
|
ASS | Succession or assignment of patent right |
Owner name: CHANGZHI HONGYUAN TECHNOLOGY CHIP TECHNIQUE CO., L Free format text: FORMER OWNER: SHENZHEN EPISTONE COMP-SEMI MATERIALS INC. Effective date: 20101231 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518118 BUILDING B1, SHENCHANGGANG INDUSTRIAL PARK, NO.8, JINLONG ROAD 1 SOUTH, BAOLONG INDUSTRY CITY, BAOLONG DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE TO: 046600 NO.12, JIEFANG WEST STREET, CHANGZHI CITY, SHANXI PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101231 Address after: 046600 No. 12 Jiefang West Street, Shanxi, Changzhi Patentee after: Changzhi Hongyuan Scitech Wafer Technology Co.,Ltd. Address before: 518118 Guangdong province Shenzhen Baolong Baolong Industrial City Jinlong Road No. 8 a long Gang Industrial Park building B1 Patentee before: Shenzhen Audemars Pigeut Stone semiconductor material Co., Ltd. |
|
DD01 | Delivery of document by public notice |
Addressee: Zhou Rui Document name: Review of business letter |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080709 Termination date: 20130421 |