CN1858130A - Polishing liquid for tungsten plug in large scale integrated circuit multilayer wiring - Google Patents
Polishing liquid for tungsten plug in large scale integrated circuit multilayer wiring Download PDFInfo
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- CN1858130A CN1858130A CN 200610013976 CN200610013976A CN1858130A CN 1858130 A CN1858130 A CN 1858130A CN 200610013976 CN200610013976 CN 200610013976 CN 200610013976 A CN200610013976 A CN 200610013976A CN 1858130 A CN1858130 A CN 1858130A
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- polishing fluid
- integrated circuit
- large scale
- multilayer wiring
- scale integrated
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Abstract
The present invention relates to polishing liquid for tungsten plug in large scale integrated circuit multilayer wiring, and features that the polishing liquid is prepared with silicon sol as abrasive 50-90 wt%, tetra(tetrahydroxyethylethyleneamine) ethylenediamineacetate 0.5-5 wt%, oxidant 0.5-4 wt%, surfactant 0.1-10 wt% and deionized water for the rest, and through successive mixing. The polishing liquid has tetra(tetrahydroxyethylethyleneamine) ethylenediamineacetate as pH regulator, buffering agent and chelating agent; and peroxide containing no metal ion as oxidant, resulting in no corrosion on the polishing apparatus and simple post cleaning. The present invention can lower the metal ion contamination, produce high device polishing effect and raise the reliability of the polished device. The polishing liquid has less environmental pollution, low cost and wide application.
Description
Technical field
The present invention relates to a kind of polishing fluid that is applied to microelectronic, particularly a kind of polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug.
Background technology
At present, the wiring number of plies of super large-scale integration is in continuous increase, and it is unique method that can realize leveling that each layer all requires leveling, chemically machinery polished.The research work of CMP mainly concentrates on the association of the U.S. based on SEMTECH in the past, and the CMP technology at first entered the processing line application in the U.S. early than 1994 under its promotion.Subsequently, Japan also begins CMP technology is introduced the oxide film planarization technology of its 0.5 μ m processing line at the beginning of nineteen ninety-five, began to be used for the planarization technology of tungsten in 1996, now developed into the whole world, as the JESSI of association in Europe, French LETI of research company and CNET, the FRALDHOFER institute of Germany, the Korea S in Asia and China Taiwan be also in Study on Acceleration and exploitation, and present the high competition impetus.There is the effect of a series of complicated chemical and machinery in the technology of tungsten CMP, and many parameter such as pressure and temperature, pH values etc. of influencing are arranged, relate to physics of metals, solid-state physics, multiple subjects such as materialogy and microelectronics also exist many theoretical questions that need to be resolved hurrily.In chemically machinery polished, polishing fluid plays an important role to polishing speed and polishing effect, and the proportioning of polishing fluid is not disclosed as trade secret always.At present, the Wolfram polishing liquid produced of world-famous major company such as Cabot, Rohm and Haas is for acid.As the Semi-Sperse W2000 Wolfram polishing liquid of Cabot company, the pH value is between 2.1-2.9; The MSW2000 series of Rohm and Haas, pH value are 3.9; These polishing fluids are abrasive material with the higher aluminium sesquioxide of hardness.The polishing mechanism of acid polishing slurry is with strong mechanical effect, grinds acidifying dissolved method again with the very high aluminium sesquioxide of hardness earlier.Select to increase film than add this triazole of benzene (BTA) in solution in order to improve height, form unimolecular film at recess, recess is subjected to the film resistance to select ratio to improve height when remove at protruding place.But complex technical process, speed is low, and the bits grain returns easily and is adsorbed on the surface again.Yet the acid polishing slurry etching apparatus causes that easily metal ion stains; As abrasive material,, cause scuffing easily with aluminium sesquioxide because alchlor hardness is big; And its viscosity is strong, and follow-up being difficult to cleans.With the silica hydrosol is abrasive material, unstable under high pH value, and the pH value is greater than the dissolving that silicon sol can take place in 12.5 o'clock.Along with the continuous development of microelectronics, the requirement of chemically machinery polished is also being improved constantly.Because alkaline environment is fit to the environment that microelectronics is produced, therefore research and develop alkalescence polishing liquid to adapt to developing rapidly of microelectronic industry, be one of difficult problem of needing to be resolved hurrily of this field.
Summary of the invention
The objective of the invention is to overcome above-mentioned weak point, provide under a kind of high pH value, improve polishing speed with strong chelating, complexing action, metal ion not, need not add and increase film, easy cleaning, reduce to the corrosion of equipment and to the pollution of environment, and the polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug that reduces production costs.
Implementation of the present invention is as follows for achieving the above object:
A kind of polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug is characterized in that: the composition weight % of polishing fluid is as follows:
Abrasive material 50-90, ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) 0.5-5,
Oxygenant 0.5-4, tensio-active agent 0.1-10,
The deionized water surplus;
Above-mentioned each component is mixed step by step, and stirring gets final product.
Described abrasive material is a silicon sol, and particle diameter is 15nm-100nm, and dispersity is between ± 5%, and concentration is 20%-50%.
Described ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) can be used as pH value conditioning agent, buffer reagent and sequestrant, not metal ion.
Described tensio-active agent is non-ion interface promoting agent, selects to add FA/O tensio-active agent, the secondary alkyl ethoxylated (JFC) of polyoxyethylene, O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H) a kind of.
Described oxygenant is soluble under the alkaline medium, the superoxide of metal ion not, selects to add hydrogen peroxide or peroxide tetra-sodium.
Described polishing fluid pH value is 9-13.
The acting as of each component among contrast prior art the present invention:
With the nanometer grade silica is abrasive material, and its hardness is less, is evenly distributed, and can solve the scratch resistant problem of aluminium abrasive material; And good fluidity, nothing precipitate, polishing after product viscosity is little, and follow-up cleaning is simple; And abrasive silica is nontoxic, pollution-free, is the ideal abrasive material.
Ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) in polishing fluid as pH value conditioning agent, buffer reagent and sequestrant.Because it is metal ion not, replace general alkalescence polishing liquid highly basic commonly used such as sodium hydroxide (NaOH), potassium hydroxide (KOH) by it, thereby can avoid alkalimetal ion to enter effects such as the local break-through of caused device, leakage current increase in the substrate at polishing process.Be in the polishing fluid of abrasive material with the silicon sol, the strong electrolyte metal ion also can make silica sol gel, and polishing fluid is scrapped.And the ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) of metal ion can effectively not address the above problem and silicon sol can not dissolve at ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine).Ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) also can be used as pH value buffer reagent simultaneously, and promptly when polishing fluid local pH value changed, the hydroxyl of release itself made polishing fluid keep stable p H value rapidly, improves stability of slurry.In addition, the present invention adopts ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) to form ring texture with metal ion, plays the effect of sequestrant.
Tensio-active agent plays important effect in the tungsten polishing.It affects dispersiveness, the particle absorption back of polishing fluid and cleans problems such as complexity and metal ion contamination.Select the suitable promoting agent transfer rate that not only can improve the quality, to improve planeness; And can reduce surface tension, and reduce damage layer thickness, reduce the damage mist, can also preferentially adsorbed, form the physical adsorption surface of long-term easy cleaning, to improve condition of surface.
Oxygenant can become softer zone of oxidation with the tungsten surface oxidation in polishing process, like this, under the worn effect of abrasive material, can easier strip down, and can improve polishing speed like this.Simultaneously, at the rough recess of wafer, oxide compound protects it, and protruding place is then fallen by abrasive material is worn, can improve the height of polishing process and select ratio.Simultaneously, the pressure that exists at protruding place can make oxidized tungsten surface easily and ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) chemical reaction preferentially takes place, generate water-soluble salt, lower pressure is little then to be not easy to take place chemical reaction, can further improve height like this and select ratio.Like this, oxygenant and ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) just can improve the height selectivity and not be used in adding BTA, save cost.With regard to Wolfram polishing liquid oxygenant now commonly used K is arranged
3[Fe (CN)
6], Fe (NO
3)
3, KIO
3With hydrogen peroxide etc.K
3Fe (CN)
6, Fe (NO
3)
3Can introduce Fe
3+, KIO
3Can introduce K
+, form ion and stain, influence device performance, and K
3Fe (CN)
6Also have severe toxicity, totally unfavorable to being applied to produce, and can cause serious environmental to pollute.The oxygenant that the present invention adopts is metal ion not, can not cause that metal ion stains; Make reaction product pollution-free, be easy to clean.
The invention has the beneficial effects as follows:
1. general acid polishing slurry changes alkalescence into now, can reduce the corrosion to equipment like this, prolongs the work-ing life of equipment, reduces the pollution to environment.
2. the problem of difficulty is cleaned in scuffing that causes when effectively solving aluminium sesquioxide for abrasive material and back, improves the yield rate of product; The back is cleaned simple, can reduce the expense in the cleaning of back.
3. solved silicon sol problem of unstable under high pH value.
4. by selecting the not ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) and the oxygenant of metal ion for use, can reduce metal ion and stain; The sequestering action of ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) simultaneously can significantly reduce the metal ion pollution of surface of polished, improves the reliability of device.
5. prescription advantages of simple, preparation technology is simple and direct, and price reduces cost; The many usefulness of potion are widely used.
Embodiment
Below in conjunction with preferred embodiment, to details are as follows according to embodiment provided by the invention:
Embodiment 1
Preparation 1000g polishing fluid:
Get abrasive material silicon sol 900g, its particle diameter is 15nm-100nm, and dispersity is between ± 5%, and concentration is 20%; Add ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) 5g respectively, as pH value conditioning agent, buffer reagent and sequestrant, metal ion not, regulating the pH value is 9-13; FA/O tween 5g, hydrogen peroxide 5g, deionized water are surplus 85g; Above-mentioned each group is stirred while adding and mixes.Oxygenant is soluble under the alkaline medium, the superoxide of metal ion not; The add-on of abrasive material is looked the concentration of silicon sol and is selected proportioning, and available deionized water is regulated, and preparation condition is loose, and polishing effect is remarkable.
Embodiment 2
Preparation 1000g polishing fluid:
Get abrasive material silicon sol 800g, particle diameter is 15nm-20nm, and dispersity is between ± 5%, and concentration is 30%; Add ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) 20g respectively, as pH value conditioning agent, buffer reagent and sequestrant, metal ion not, regulating the pH value is 12.5; Secondary alkyl ethoxylated (JFC) 100g of surfactant polyoxyethylene, hydrogen peroxide 10g, deionized water are surplus 70g; Above-mentioned each group is stirred while adding and mixes.Other is with embodiment 1.
Embodiment 3
Preparation 1000g polishing fluid:
Get abrasive material silicon sol 700g, particle diameter is 80-100nm, and dispersity is between ± 5%, and concentration is 35%; Add ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) 45g respectively, as pH value conditioning agent, buffer reagent and sequestrant, metal ion not, regulating the pH value is 13; Tensio-active agent O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H) 40g, hydrogen peroxide 20g, deionized water are surplus 195g; Above-mentioned each group is stirred while adding and mixes.Other is with embodiment 1.
Embodiment 4
Preparation 1000g polishing fluid:
Get abrasive material silicon sol 600g, particle diameter is 15nm-40nm, and dispersity is between ± 5%, and concentration is 40%; Add ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) 50g respectively, as pH value conditioning agent, buffer reagent and sequestrant, metal ion not, regulating the pH value is 11.5; Tensio-active agent O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H) 50g, hydrogen peroxide 30g, deionized water are surplus 270g; Above-mentioned each group is stirred while adding and mixes.Other is with embodiment 1.
Embodiment 5
Preparation 1000g polishing fluid:
Get abrasive material silicon sol 500g, particle diameter is 15nm-30nm, and dispersity is between ± 5%, and concentration is 50%; Add ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) 50g respectively, as pH value conditioning agent, buffer reagent and sequestrant, metal ion not, regulating the pH value is 9; Tensio-active agent O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H) 1g, peroxide tetra-sodium 40g, deionized water are surplus 409g; Above-mentioned each group is stirred while adding and mixes.Other is with embodiment 1.
Above-mentioned detailed description of the polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug being carried out with reference to embodiment; be illustrative rather than determinate; can list several embodiment according to institute's limited range; therefore in the variation and the modification that do not break away under the general plotting of the present invention, should belong within protection scope of the present invention.
Claims (6)
1. polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug, it is characterized in that: the composition weight % of polishing fluid is as follows:
Abrasive material 50-90, ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) 0.5-5,
Oxygenant 0.5-4, tensio-active agent 0.1-10,
The deionized water surplus;
Above-mentioned each component is mixed step by step, and stirring gets final product.
2. the polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug according to claim 1 is characterized in that: described abrasive material is a silicon sol, and particle diameter is 15nm-100nm, and dispersity is between ± 5%, and concentration is 20%-50%.
3. the polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug according to claim 1, it is characterized in that: described ethylenediamine tetraacetic acid (EDTA) four (tetrahydroxyethyl-ethylene diamine) can be used as pH value conditioning agent, buffer reagent and sequestrant, not metal ion.
4. the polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug according to claim 1, it is characterized in that: described tensio-active agent is non-ion interface promoting agent, selects to add FA/O tensio-active agent, the secondary alkyl ethoxylated (JFC) of polyoxyethylene, O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H) a kind of.
5. the polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug according to claim 1, it is characterized in that: described oxygenant is soluble under the alkaline medium, the superoxide of metal ion not, selects to add hydrogen peroxide or peroxide tetra-sodium.
6. the polishing fluid that is used for the large scale integrated circuit multilayer wiring tungsten plug according to claim 1 is characterized in that: described polishing fluid pH value is 9-13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610013976 CN1858130A (en) | 2006-05-31 | 2006-05-31 | Polishing liquid for tungsten plug in large scale integrated circuit multilayer wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610013976 CN1858130A (en) | 2006-05-31 | 2006-05-31 | Polishing liquid for tungsten plug in large scale integrated circuit multilayer wiring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1858130A true CN1858130A (en) | 2006-11-08 |
Family
ID=37297088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610013976 Pending CN1858130A (en) | 2006-05-31 | 2006-05-31 | Polishing liquid for tungsten plug in large scale integrated circuit multilayer wiring |
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|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101966688A (en) * | 2010-07-21 | 2011-02-09 | 河北工业大学 | Low-pressure CMP (Chemico-mechanical Polishing) method for grand-scale integrated circuit copper wiring surface |
| WO2012009938A1 (en) * | 2010-07-21 | 2012-01-26 | 河北工业大学 | Anti-oxidation method for multilayer wiring of ultra large scale integrated circuit after alkaline polishing |
| CN106118492A (en) * | 2016-07-11 | 2016-11-16 | 河北工业大学 | A kind of alkalescence polishing liquid for barrier layer ruthenium and preparation method thereof |
-
2006
- 2006-05-31 CN CN 200610013976 patent/CN1858130A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101966688A (en) * | 2010-07-21 | 2011-02-09 | 河北工业大学 | Low-pressure CMP (Chemico-mechanical Polishing) method for grand-scale integrated circuit copper wiring surface |
| WO2012009938A1 (en) * | 2010-07-21 | 2012-01-26 | 河北工业大学 | Anti-oxidation method for multilayer wiring of ultra large scale integrated circuit after alkaline polishing |
| CN106118492A (en) * | 2016-07-11 | 2016-11-16 | 河北工业大学 | A kind of alkalescence polishing liquid for barrier layer ruthenium and preparation method thereof |
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