CN1851867A - Ion injection uniformity control system and control method - Google Patents
Ion injection uniformity control system and control method Download PDFInfo
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- CN1851867A CN1851867A CN 200510066337 CN200510066337A CN1851867A CN 1851867 A CN1851867 A CN 1851867A CN 200510066337 CN200510066337 CN 200510066337 CN 200510066337 A CN200510066337 A CN 200510066337A CN 1851867 A CN1851867 A CN 1851867A
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Abstract
This invention discloses a control system and a method for uniform ionic injection, in which, said system includes a mobile Faraday cup, a dose integral tester, a digit scan generator, a target stand movement and uniformity controller and a computer, in which, the output of said Faraday cup is connected with the dose integral tester, the output of the which is connected with the controller, said Faraday cup, the tester, the scan generator and the target stand movement and uniformity controller are connected with the computer and controlled by the computer, the control method for uniformity includes a level uniform test and modification and a vertical uniformity test and modification and the uniformity reaches to the error sphere by testing the scan data and modifying data in many times.
Description
Technical field
The present invention relates to a kind of ion implantation uniformity control system and control method, relate to ion implantor especially, belong to field of manufacturing semiconductor devices.
Background technology
Ion beam implanter is one of implantation equipment of most critical during semiconductor device is made.The integrated level of making along with semiconductor device is to the SOC (system on a chip) scale development, the wafer that is used for the device manufacturing is towards the above size expansion of 300mm, the unit component size is then reduced towards micro-nano hachure, particularly the reducing of transistor, field effect transistor size on the sheet injected doping techniques to ion beam and proposed challenge clearly.The device of 100nm level, its unit field effect transistor need generate the shallow junction source-drain structure, that is: become deeply very shallow of source-and-drain junction, and that the source-drain electrode boundary will be very is precipitous.In order to guarantee the stable performance and the repetition of shallow junction transistor and field effect transistor on the sheet, in the ion implantation doping process, requirement is implemented accurate closed-loop control to the uniformity of repeatability, implant angle, injection element purity and the implantation dosage of implantation dosage, injection energy, injection and is automatically adjusted.
At present, domestic traditional ion implantor, complete machine control also is in semi-automatic state, and the dose uniformity control of ion implantation doping is a blank especially, can not satisfy the requirement of semiconductor doping technology in the micro-nano device manufacturing.
Summary of the invention
The present invention be directed to that prior art intermediate ion beam implanter does not have implantation dose uniformity detection and control system and this problem of method and the method for a kind of ion implantation uniformity control that proposes, this invention is applied to ion implantor, not only can satisfy the needs of process for fabrication of semiconductor device development, and can accurately detect and the automatic implantation dosage of adjusting, make that the implantation dose uniformity on the monoblock wafer is controlled.
The invention provides a kind of system of ion implantation uniformity control, comprise mobile Faraday cup, integrating dose meter detector, numerical control sweeping generator, the motion of target platform and uniformity controller and computer, described mobile Faraday cup output is connected with the integrating dose meter detector; Described integrating dose meter detector output is connected with uniformity controller with the motion of target platform; Described mobile Faraday cup, integrating dose meter detector, numerical control sweeping generator, the motion of target platform all are connected with computer with uniformity controller, by the computer coordination and control.
The present invention also provides a kind of ion implantation uniformity control method, comprises that horizontal uniformity detection detects and makeover process with vertical uniformity with makeover process.Wherein:
Horizontal uniformity detects with makeover process and comprises the steps:
(1) electrostatic deflection numerical control sweeping generator produces a linear ramp waveform, makes ion beam along the linear scan of X horizontal direction, and sweep length is greater than the wafer diameter;
(2) mobile Faraday cup, the line of X each point on horizontal line is measured in pointwise;
(3) according to measuring the heterogenicity error of line, according to modified computing formulae:
[dV(x)/dt]
n＝[dV(x)/dt]
0×I(x)/I
0
The linear ramp slope is carried out the pointwise correction; Wherein: I (x) is the line that Faraday cup records, I
0Be desirable line, dV (x)/dt is the time dependent slope of scanning voltage;
(4) restart the scanning of electrostatic deflection sweeping generator, mobile once more Faraday cup is measured ion beam current I (x) along the pointwise of X horizontal direction;
(5) repeated multiple times step (3) and (4) are carried out sweep waveform correction and uniformity and are detected, till measured homogeneity error is less than the deviation that is provided with;
Vertical uniformity detects with makeover process and comprises the steps:
(1) when carrying out the ion beam injection, mobile Faraday cup is moved on to the right side of wafer; In the horizontal direction, the inswept from left to right wafer of electrostatic deflection scanning, inswept again Faraday cup, Faraday cup is crossed in flyback then, and wafer is crossed in flyback again, is parked in the left side of wafer at last, has finished the injection of a scan period; Simultaneously, in vertical direction, the linear motor driving target disc drives wafer work uniform motion up and down reciprocatingly;
Ion beam along continuous straight runs run-down, Faraday cup is to the ion beam line once sampling of this time scanning;
(2) if the line integrated value that each scanning sample arrives equates that then the actual scanning time does not change; If the line that samples in scanning changes, then show when scanning next time, to the actual scanning time according to correction-compensation formula t
n=t
n-1 * q
0/ q adjusts; Wherein: q
0Be the desirable quantity of electric charge, q is detected t for last time scanning the actual quantity of electric charge that records by the current integration instrument
N-1Be actual scanning time last time, t
nBe actual sweep time of next time.
The present invention has following remarkable advantage:
1, can accurately locate mobile survey line Faraday cup, positioning accuracy can reach 0.1mm, moves in the horizontal direction, and can carry out the mapping that the ion beam profile beam current density distributes, and draws the monitoring that provides detailed for ion beam;
2, can realize the accurate detection of ion implantation dosage, adjustment and dose uniformity control automatically automatically.
Description of drawings
Fig. 1 is the structured flowchart of a kind of ion implantation uniformity control system embodiment of the present invention;
Fig. 2 is the prenex distributions schematic diagram of the uniformity correction of the embodiment of the invention;
Fig. 3 is the uniformity correction posterior cord distributions schematic diagram of the embodiment of the invention;
Fig. 4 is the scanning voltage waveform figure of the embodiment of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is further introduced, but not as a limitation of the invention.
Referring to Fig. 1, a kind of ion implantation uniformity control device, comprise: mobile Faraday cup 1, integrating dose meter detector 2, numerical control sweeping generator 3, the motion of target platform and uniformity controller 4 and computer 5, mobile Faraday cup 1 is the ion beam flux detector, it is under the driving of numerical control device 6, can do pinpoint moving in the horizontal direction, integrating dose meter detector 2 carries out integration operation with the ion beam current that mobile Faraday cup 1 detects to the time, obtain the dose value of ion beam current, and this value is carried out analog-to-digital conversion, after obtaining the digital quantity of dosage, give computer 5; The numerical control sweeping generator is opened the scanning of ion beam along continuous straight runs, cover whole wafer diameter range, realize injection in the horizontal direction to whole wafer scope, this numerical control sweeping generator 3 is subjected to computer 5 controls, scan period is a fixed constant, but in a scan period, the actual time of scanning can accurately be regulated by computer 5, and promptly Sao Miao duty ratio can accurately be regulated; Motion of target platform and uniformity controller 4 implement to inject the process of mixing at ion implantor to wafer, control linear electric motors 7, make target platform 8 vertically do mechanical scanning campaign at the uniform velocity, simultaneously, motion of target platform and uniformity controller 4 also receive the dose value that integrating dose meter detector 2 is sent here, implantation dosage in the injection process is carried out monitoring in real time, find that implantation dosage departs from set point, then go to adjust the real time of ion beam horizontal direction scanning by computer 5 controls, with the variation of compensation implantation dosage, keep the constant of implantation dosage; In whole process, computer 5 is adjusted the collaborative work of mobile Faraday cup 1, integrating dose meter detector 2, numerical control sweeping generator 3, the motion of target platform and uniformity controller 4, realizes the accurate detection of ion implantation dosage, adjustment and dose uniformity control automatically.
The ion beam of drawing from ion source, arrive wafer target platform through the bunch transmission system, under the control of numerical control sweeping generator, along continuous straight runs scanning is opened, cover whole wafer diameter range, since the parallelism error behind the nonlinearity erron of electrostatic deflection scanning field and the parallel lens correction make ion beam in the horizontal direction line to distribute be uneven, in the ion source system, the bunch system respectively draws after the bundle parameter determines, as long as the electric current setting of each major parameter and parallel lens does not change, the line inhomogeneities of ion beam on the X horizontal direction distributes and just can not change, thereby after ion beam draws Shu Zhengchang, before wafer injects doping, just the heterogeneity of ion beam in the X horizontal direction detected and revise, make its homogeneity error less than the deviation of setting.
In target chamber, the unilateral motion of wafer that the Faraday cup that moves horizontally is accepted face and target platform is same plane.
Horizontal uniformity detects with the method step of revising:
(1) electrostatic deflection numerical control sweeping generator produces a linear ramp waveform, makes ion beam along the linear scan of X horizontal direction, and sweep length is greater than the wafer diameter;
(2) mobile Faraday cup, the line of X each point on horizontal line is measured in pointwise, the ion beam current of each point be X to the function I of position (X), function curve is seen Fig. 2, during visible unmodified, the distribution of ion beam line is heterogeneous;
(3) according to the heterogenicity error measured, according to modified computing formulae:
[dV(x)/dt]
n＝[dV(x)/dt]
0×I(x)/I
0…
The linear ramp slope is carried out the pointwise correction so that ion beam line I (X) at X to being evenly distributed.
Wherein: I (x) is the line that Faraday cup records, I
0It is desirable line.DV (x)/dt is the time dependent slope of scanning voltage.This correction algorithm pointwise is added on the scanning voltage waveform, just can obtain new nonlinear scanning voltage waveform;
(4) waveform in the step (3) is deposited in the wave memorizer of digital scan generator, restart the scanning of electrostatic deflection sweeping generator, mobile once more Faraday cup is measured ion beam current I (x) along the pointwise of X horizontal direction, and its distribution curve that draws is seen Fig. 3.As seen current ion beam distributions is near even.
(5) repeated multiple times step (4) is carried out sweep waveform correction and uniformity and is detected, till measured homogeneity error is less than the deviation that is provided with.
By proofread and correct the electrostatic deflection sweeping generator sweep waveform, guaranteed the uniformity of ion beam implantation dosage in horizontal band, and vertically, horizontal band also needs vertical uniformity to detect with dose uniformity between the band and revises, and its method step is:
(1) when carrying out the ion beam injection, mobile Faraday cup is moved on to the right side of wafer; In the horizontal direction, the inswept from left to right wafer of electrostatic deflection scanning, inswept again Faraday cup, Faraday cup is crossed in flyback then, and wafer is crossed in flyback again, is parked in the left side of wafer at last, has finished the injection of a scan period; Simultaneously, in vertical direction, the linear motor driving target disc drives wafer work uniform motion up and down reciprocatingly.
The every run-down of ion beam along continuous straight runs, Faraday cup just can be seen Fig. 4 to the ion beam line once sampling of this time scanning.
Among the figure, T is the scan period, is definite value, remains unchanged when injecting, and in fact also is wafer from a band to time that adjacent ribbons is moved one's steps; T is the actual scanning time, is the scalable amount, by the adjusting to this parameter, can reach the purpose of control implantation dosage; △ T is a scanning stop time.
(2) if the line integrated value that each scanning sample arrives equates that then the t parameter shown in Fig. 4 just need not change, horizontal band also is consistent with implantation dose uniformity between the band; If the line that samples in scanning changes, show that then variation has taken place the quantity of electric charge that Faraday cup receives, when scanning, actual scanning time t parameter is adjusted, to guarantee the uniformity of implantation dosage between horizontal band and the band next time.The correction-compensation formula is: t
n=t
n-1 * q
0/ q, wherein: q
0Be the desirable quantity of electric charge, q is for last time scanning the actual quantity of electric charge that records, t
N-1Be actual scanning time last time, t
nBe actual sweep time of next time.The quantity of electric charge is detected by the current integration instrument.The t that tries to achieve
nValue passes to the digital scan generator, removes to regulate the correct scan waveform to the slope of time, to regulate the actual scanning time, reaches the purpose of control strip interband implantation dosage.
Embodiment:
Write down one group of horizontal uniformity correction data according to said method, as shown in table 1 below:
Number of corrections is meant scanning voltage waveform modified computing formulae in the table 1
[dV (x)/dt]
n=[dV (x)/dt]
0* I (x)/I
0The number of times of proofreading and correct is taken as 3 times, and the scanning voltage waveform is the linear scan waveform without correction in the time of 0 time.I (x) is under corresponding scanning voltage, along the line distribution value that directions X records, surveys 10 points in the 200mm scope from left to right, and as can be seen from the table, the scanning voltage waveform is generally through after 2-3 the correction, horizontal uniformity just can reach ± and 0.5%.
Vertical uniformity correction data, test data is as shown in table 2 below:
In the table 2, select 10 bands to carry out the implantation dosage test along the Y vertical direction, when first behavior is fixed as t=600 μ s sweep time, the injectant value of each measured band; Second behavior t sweep time adjusts measured injectant value with the implantation dosage variation.As seen the implantation dose uniformity of second row obviously is better than first row.
Specific embodiment of the present invention elaborates content of the present invention.For persons skilled in the art, any conspicuous change that it is done all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities without departing from the premise in the spirit of the present invention.
Table 1: unit: microampere
| Number of corrections | I(x1) | I(x2) | I(x3) | I(x4) | I(x5) | I(x6) | I(x7) | I(x8) | I(x9) | I(x10) | Uniformity |
| 0 | 15.11 | 14.92 | 14.81 | 14.82 | 14.63 | 14.31 | 14.02 | 13.61 | 13.03 | 12.01 | 7％ |
| 1 | 14.65 | 14.65 | 14.60 | 14.60 | 14.50 | 14.50 | 14.30 | 14.26 | 14.13 | 14.08 | 1.5％ |
| 2 | 14.58 | 14.60 | 14.61 | 14.49 | 14.51 | 14.50 | 14.45 | 14.34 | 14.30 | 14.21 | 0.93％ |
| 3 | 14.51 | 14.52 | 14.54 | 14.51 | 14.50 | 14.50 | 14.51 | 14.46 | 14.48 | 14.49 | 0.15％ |
Table 2: unit: 10
14Population/centimetre
2
| | Band | 1 | | | | | | | | Band 9 | Band 10 | Uniformity |
| Sweep time, t was fixed as 600 μ s | 5.25 | 5.10 | 5.05 | 4.90 | 5.00 | 5.10 | 5.30 | 5.26 | 5.20 | 5.32 | 2.7％ | |
| Change with metering sweep time and adjust | 5.02 | 5.03 | 5.01 | 4.99 | 5.00 | 5.02 | 4.98 | 5.02 | 5.03 | 5.01 | 0.33％ |
Claims (3)
1, a kind of ion implantation uniformity control system comprises mobile Faraday cup, integrating dose meter detector, numerical control sweeping generator, the motion of target platform and uniformity controller and computer, it is characterized in that:
Described mobile Faraday cup output is connected with the integrating dose meter detector; Described integrating dose meter detector output is connected with uniformity controller with the motion of target platform; Described mobile Faraday cup, integrating dose meter detector, numerical control sweeping generator, the motion of target platform all are connected with computer with uniformity controller, by the computer coordination and control.
2, a kind of ion implantation uniformity control system as claimed in claim 1, it is characterized in that: described mobile Faraday cup is connected with numerical control device.
3, a kind of uniformity control method of implementing a kind of ion implantation uniformity control system as claimed in claim 1 comprises that horizontal uniformity detection detects and makeover process with vertical uniformity with makeover process, is characterized in that:
Described horizontal uniformity detects with makeover process and comprises the steps:
(1) electrostatic deflection numerical control sweeping generator produces a linear ramp waveform, makes ion beam along the linear scan of X horizontal direction, and sweep length is greater than the wafer diameter;
(2) mobile Faraday cup, the line of X each point on horizontal line is measured in pointwise;
(3) according to measuring the heterogenicity error of line, according to modified computing formulae:
[dV(x)/dt]
n＝[dV(x)/dt]
0×I(x)/I
0
The linear ramp slope is carried out the pointwise correction;
(4) restart the scanning of electrostatic deflection sweeping generator, mobile once more Faraday cup is measured ion beam current I (x) along the pointwise of X horizontal direction;
(5) repeated multiple times step (3) and (4) are carried out sweep waveform correction and uniformity and are detected, till measured homogeneity error is less than the deviation that is provided with;
Described vertical uniformity detects with makeover process and comprises the steps:
(1) when carrying out the ion beam injection, mobile Faraday cup is moved on to the right side of wafer; In the horizontal direction, the inswept from left to right wafer of electrostatic deflection scanning, inswept again Faraday cup, Faraday cup is crossed in flyback then, and wafer is crossed in flyback again, is parked in the left side of wafer at last, has finished the injection of a scan period; Simultaneously, in vertical direction, the linear motor driving target disc drives wafer work uniform motion up and down reciprocatingly;
Ion beam along continuous straight runs run-down, Faraday cup is to the ion beam line once sampling of this time scanning;
(2) if the line integrated value that each scanning sample arrives equates that then the actual scanning time does not change; If the line that samples in scanning changes, then show when scanning next time, to the actual scanning time according to correction-compensation formula: t
n=t
n-1 * q
0/ q adjusts.
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| CN102347194A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | Method for accurately controlling ion implantation distribution uniformity |
| CN102446688A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Two-dimensional scanning method for controlling uniform ion implantation |
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| CN102768967B (en) * | 2012-07-03 | 2015-04-29 | 上海华力微电子有限公司 | Method for monitoring homogeneity and stability of F element ion injection process |
| CN102768967A (en) * | 2012-07-03 | 2012-11-07 | 上海华力微电子有限公司 | Method for monitoring homogeneity and stability of F element ion injection process |
| CN112259431A (en) * | 2020-10-14 | 2021-01-22 | 北京烁科中科信电子装备有限公司 | Target platform station control method based on position compensation |
| CN112635280A (en) * | 2020-12-12 | 2021-04-09 | 北京烁科中科信电子装备有限公司 | Ion implanter beam current and dose measurement and control device and method |
| CN112635280B (en) * | 2020-12-12 | 2024-02-23 | 北京烁科中科信电子装备有限公司 | Beam and dose measurement and control device and method for ion implanter |
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