CN1850681A - Lead-free low-temperature diode glass bulb - Google Patents

Lead-free low-temperature diode glass bulb Download PDF

Info

Publication number
CN1850681A
CN1850681A CNA2006100264185A CN200610026418A CN1850681A CN 1850681 A CN1850681 A CN 1850681A CN A2006100264185 A CNA2006100264185 A CN A2006100264185A CN 200610026418 A CN200610026418 A CN 200610026418A CN 1850681 A CN1850681 A CN 1850681A
Authority
CN
China
Prior art keywords
minus
plus
oxide
glass bulb
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006100264185A
Other languages
Chinese (zh)
Inventor
华嘉荣
张介林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CNA2006100264185A priority Critical patent/CN1850681A/en
Publication of CN1850681A publication Critical patent/CN1850681A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)

Abstract

The invention provides a chemical formula for a lead-free, low- temperature diode glass shell, comprising: silicon dioxide SiO2 46 plus or minus 1%; diboron trioxide B2O5 19.5 plus or minus 1%; sodium oxide Na2O 8.5 plus or minus 0.3%; potassium oxide K2O 5 plus or minus 0.3%; titanium oxide TiO2 3.7 plus or minus 0.5%; lithium oxide Li2O 3.8 plus or minus 0.3%; baryta BaO 1.85 plus or minus 0.2%; alumina Al2O3 1.6 plus or minus 0.5%; calcium oxide CaO 0.95 plus or minus 0.1%; diantimony trioxide Sb2O3 <=0.3%; zinc oxide ZnO 8.8 plus or minus 0.3%; and its sealing temperature is 630-660 deg.C and its expansion coefficient is in the 87-91*10-7/deg.C range, thus completely meeting the diode packaging process requirements and industrial production requirements, thus reducing the production cost.

Description

Lead-free low-temperature diode glass bulb
Technical field
The present invention relates to a kind of material component configuration of encapsulated semiconductor diode glass bulb.
Background technology
The glass bulb that is used for the encapsulation of electronic devices and components such as diode at present, uses generally in the world that to contain 58-61% plumbous oxide be that the low temperature glass of main chemical composition is made; Because the special requirement of encapsulation electronic devices and components technology such as diode and technology, the glass bulb of its shell must be with the sealed knot temperature at 625-650 ℃, and the coefficient of expansion is in 87-91 * 10 -7/ ℃ low temperature glass make, in order to satisfy above-mentioned two conditions, in traditional process of glass and chemical composition, all adopt plumbous oxide.But plumbous oxide can bring environmental pollution, and is particularly harmful to HUMAN HEALTH, and present even proposition bans use of plumbous oxide.
Summary of the invention
In order to solve in the encapsulation diode glass bulb material, do not have plumbous oxide, and can satisfy the requirement of the sealed knot temperature and the coefficient of expansion again, the invention provides a kind of chemical composition prescription of lead-free low-temperature diode glass bulb, the prescription of this chemical composition is:
The shared component % of chemical name
Silicon-dioxide Sio 246 ± 1
Boron trioxide B 2O 319.5 ± 1
Oxygen China zinc Zno 8.8 ± 0.3
Sodium oxide Na 2O 8.5 ± 0.3
Potassium oxide K 2O 5 ± 0.3
Titanium oxide Tio 23.7 ± 0.5
Lithium Oxide 98min Li 2O 3.8 ± 0.3
Barium oxide BaO 1.85 ± 0.2
Aluminium oxide Al 2o 31.6 ± 0.5
Calcium oxide Cao 0.95 ± 0.1
Antimonous oxide Sb 2o 3≤ 0.3
As the encapsulation diode glass bulb, can reach the sealed knot temperature at 630-660 ℃ with above-mentioned chemical composition, the coefficient of expansion is in 87-91 * 10 -7/ ℃ scope satisfies the diode package processing requirement fully, and can satisfy the suitability for industrialized production requirement, thereby has reduced production cost.
Embodiment
By aforementioned chemical composition configuration, and sealed knot temperature requirement in accordance with regulations, process of glass routinely just can be made into lead-free low-temperature diode glass bulb.

Claims (1)

1, a kind of lead-free low-temperature diode glass bulb is characterized in that: this glass bulb is made by following chemical composition configuration:
The shared component % of chemical name
Silicon-dioxide Sio 246 ± 1
Boron trioxide B 2O 319.5 ± 1
Oxygen China zinc Zno 8.8 ± 0.3
Sodium oxide Na 2O 8.5 ± 0.3
Potassium oxide K 2O 5 ± 0.3
Titanium oxide Tio 23.7 ± 0.5
Lithium Oxide 98min Li 2O 3.8 ± 0.3
Barium oxide BaO 1.85 ± 0.2
Aluminium oxide Al 2o 31.6 ± 0.5
Calcium oxide Cao 0.95 ± 0.1
Antimonous oxide Sb 2o 3≤ 0.3.
CNA2006100264185A 2006-05-10 2006-05-10 Lead-free low-temperature diode glass bulb Pending CN1850681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2006100264185A CN1850681A (en) 2006-05-10 2006-05-10 Lead-free low-temperature diode glass bulb

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2006100264185A CN1850681A (en) 2006-05-10 2006-05-10 Lead-free low-temperature diode glass bulb

Publications (1)

Publication Number Publication Date
CN1850681A true CN1850681A (en) 2006-10-25

Family

ID=37132183

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100264185A Pending CN1850681A (en) 2006-05-10 2006-05-10 Lead-free low-temperature diode glass bulb

Country Status (1)

Country Link
CN (1) CN1850681A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101062832B (en) * 2006-11-21 2010-09-22 钟运辉 Leadless glass envelope for electronic product
CN102633435A (en) * 2012-03-09 2012-08-15 金招娣 Lead-free low-temperature glass for manufacturing diode glass shell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101062832B (en) * 2006-11-21 2010-09-22 钟运辉 Leadless glass envelope for electronic product
CN102633435A (en) * 2012-03-09 2012-08-15 金招娣 Lead-free low-temperature glass for manufacturing diode glass shell

Similar Documents

Publication Publication Date Title
CN102046548B (en) Semiconductor encapsulation material and method for encapsulating semiconductor using the same
AU2002319201A1 (en) Method for producing borosilicate glasses
TW200730465A (en) Glass package that is hermetically sealed with a frit and method of fabrication
DE60142663D1 (en) Glass and glass tube for semiconductor encapsulation
TW200513448A (en) UV-radiation absorbing glass with high chemical resistance, especially for a fluorescent lamp, and methods of making and using same
CN102718404B (en) Silicate glass with high strain point and application thereof
EP2308805A3 (en) Ceramic material composition
TW201130773A (en) Boron-free glass
CN104024170A (en) Glass
RU2010135771A (en) GLASS FRITS
KR20040018189A (en) Borosilicate glass and its uses
CN103282320A (en) Lead-free glass for encapsulating semiconductor, and overcoat tube for encapsulating semiconductor
CN100395204C (en) Antibacterial float glass
WO2008096876A1 (en) Solar cell module, cover glass for crystalline silicon solar cell, and glass substrate for thin film solar cell
CN1850681A (en) Lead-free low-temperature diode glass bulb
TW200738579A (en) Matrix glass composition for gradient index rod lens, and gradient index rod lens produced with the composition
CN1495141A (en) Borosilicate glass with high hydrolytic stability
SE429852B (en) COMPOSITION FOR PREPARATION OF GLASS WITH HIGH SCRATCH INDEX
ES2059200T3 (en) LEAD-FREE GLASS COMPOSITIONS.
JP2012082085A (en) Glass
CN102633435A (en) Lead-free low-temperature glass for manufacturing diode glass shell
CN101948249A (en) Environmental-friendly microsphere glass with high refractive index and preparation method thereof
WO2010142256A2 (en) High-lead content glass
JPH01286936A (en) Amber-colored borosilicate glass
CN102515518A (en) Low-sodium lead-free high-transmittance energy-saving lamp tube glass and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication