CN1848015A - Gas calibration method for semiconductor equipment - Google Patents
Gas calibration method for semiconductor equipment Download PDFInfo
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- CN1848015A CN1848015A CN 200510126453 CN200510126453A CN1848015A CN 1848015 A CN1848015 A CN 1848015A CN 200510126453 CN200510126453 CN 200510126453 CN 200510126453 A CN200510126453 A CN 200510126453A CN 1848015 A CN1848015 A CN 1848015A
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Abstract
The present invention provides gas calibration method for semiconductor equipment. After certain amount of gas is introduced through mass flowmeter to closed chamber, the pressure change before and after gas introduction is measured and inside gas mass change is calculated based on the gas state equation, so as to judge whether the mass flowmeter has normal operation. Compared with available technology, the present invention has the advantages of wide calibration range, fast calibration, low cost and excellent calibration effect.
Description
Technical field
The present invention relates to the semiconductor etching field, be specifically related to the method for gas calibration in a kind of semiconductor equipment.
Background technology
In the semiconductor technology, usually need the gas flow of gas circuit is accurately controlled to guarantee the stability of technological process, use MFC (Mass Flow Controller, mass flow controller) to set the flow of gas usually.In order to detect the accuracy of MFC, also need to cooperate a MFV (Mass Flow Verifier, mass rate master gage) to come MFC is detected in the technology, but but because the scope of MFV verification is more limited, to the stability requirement of gas also than higher, checking time is long, and it involves great expense, and technical scheme of the present invention has proposed the mode of a kind of new calibration MFC, its calibration range can be bigger, calibrate sooner, and do not need extras substantially, reached calibration result preferably.
Summary of the invention
(1) technical matters that will solve
The purpose of this invention is to provide convenient, quick, with low cost in semiconductor technology the method for gas calibration.
(2) technical scheme
For achieving the above object, method of the present invention may further comprise the steps:
Design a gas flow checking routine, this program run is in the computing machine that is connected with mass flow controller, and this program is carried out following steps,
(1) flow of setting mass flow controller is flow Q1, continue to feed the stable closed chamber of pressure that the stable gas to one of a flow links to each other with this flow controller from this mass flow controller, close the gas outlet, the duration is t, described closed chamber keeps constant temperature T, and volume is V;
(2) record described closed chamber at the pressure change Δ P that feeds the gas front and back;
(3) establish Q2=79[273/ (273+T)] [V * Δ P/t], establish A=|Q2-Q1|/Q1;
(4) A value and fault-tolerant definite value are compared, if A greater than this fault-tolerant definite value, represents that then mass flow controller is in abnomal condition, otherwise the expression mass flow controller is in normal condition.
Wherein, described fault-tolerant definite value can be set according to concrete technological requirement.
(3) beneficial effect
Because adopt above technical scheme, the present invention compared with the prior art its calibration range can be bigger, calibrate sooner, and do not need extras substantially, expense is cheap, has reached calibration result preferably.
Description of drawings
Fig. 1 is the hardware syndeton synoptic diagram of described method of the present invention;
Fig. 2 is the program flow diagram of the method for the invention.
Embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
Hardware johning knot composition of the present invention, as shown in Figure 1.Gas process mass flow controller enters chamber from the air intake opening of reaction chamber, and mass flow controller, temperature controller, pressure transducer, molecular pump are connected with industrial computer, and the gas calibration program run is on industrial computer.
Program flow diagram of the present invention, as shown in Figure 2.At first with molecular pump reaction chamber is pumped into the body vacuum, and uses the nitrogen wash gas piping, open the inlet, outlet of reaction chamber, establishing this road gas flow is Qs (unit: sccm).
The gas outlet of off-response chamber, and the force value of detection reaction chamber, until it steadily in P1 (unit: Torr), wait for t (unit: s) after time, read the pressure value P 2 (unit: Torr),, then alarm of reaction chamber if P2 bears pressure greater than the maximum of reaction chamber, and return error flag, termination routine, otherwise close air intake opening, open the gas outlet, reaction chamber is evacuated to the body vacuum, utilize the perfect condition equation of gas, calculate Q=79[273/ (273+T)] [V * (P2-P1)/t], wherein T is the temperature of the reaction chamber of temperature controller setting, if | Q-Qs|/Qs 〉=5%, thinking then that mass flow controller exceeds limits fault-tolerantly, alarms and return error flag, termination routine, otherwise return accurate indication, termination routine.
Claims (2)
1, the method for gas calibration in a kind of semiconductor equipment is characterized in that described method comprises the steps:
Design a gas flow checking routine, this program run is in the computing machine that is connected with mass flow controller, and this program is carried out following steps,
(1) flow of setting mass flow controller is flow Q1, continue to feed the stable closed chamber of pressure that the stable gas to one of a flow links to each other with this flow controller from this mass flow controller, the time that continues is t, and described closed chamber keeps constant temperature T, and volume is V;
(2) record described closed chamber at the pressure change Δ P that feeds the gas front and back;
(3) establish Q2=79[273/ (273+T)] [V * Δ P/t], establish A=|Q2-Q1|/Q1;
(4) A value and fault-tolerant definite value are compared, if A greater than this fault-tolerant definite value, represents that then mass flow controller is in abnomal condition, otherwise the expression mass flow controller is in normal condition.
2, the method for claim 1 is characterized in that described fault-tolerant definite value is according to concrete technological requirement setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510126453XA CN100498626C (en) | 2005-12-09 | 2005-12-09 | Gas calibration method for semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510126453XA CN100498626C (en) | 2005-12-09 | 2005-12-09 | Gas calibration method for semiconductor equipment |
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| Publication Number | Publication Date |
|---|---|
| CN1848015A true CN1848015A (en) | 2006-10-18 |
| CN100498626C CN100498626C (en) | 2009-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200510126453XA Active CN100498626C (en) | 2005-12-09 | 2005-12-09 | Gas calibration method for semiconductor equipment |
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| CN (1) | CN100498626C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096420A (en) * | 2009-12-15 | 2011-06-15 | 株式会社堀场Stec | Mass flow controller |
| CN103930972A (en) * | 2011-09-29 | 2014-07-16 | 应用材料公司 | Methods for monitoring a flow controller coupled to a process chamber |
| CN104750125A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Calibrating method and device for mass flow controller |
| US9644796B2 (en) | 2011-09-29 | 2017-05-09 | Applied Materials, Inc. | Methods for in-situ calibration of a flow controller |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5201581A (en) * | 1991-11-18 | 1993-04-13 | Badger Meter, Inc. | Method and apparatus for measuring mass flow and energy content using a linear flow meter |
-
2005
- 2005-12-09 CN CNB200510126453XA patent/CN100498626C/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096420A (en) * | 2009-12-15 | 2011-06-15 | 株式会社堀场Stec | Mass flow controller |
| CN102096420B (en) * | 2009-12-15 | 2015-01-14 | 株式会社堀场Stec | Mass flow controller |
| CN103930972A (en) * | 2011-09-29 | 2014-07-16 | 应用材料公司 | Methods for monitoring a flow controller coupled to a process chamber |
| CN103930972B (en) * | 2011-09-29 | 2017-01-18 | 应用材料公司 | Methods for monitoring a flow controller coupled to a process chamber |
| US9644796B2 (en) | 2011-09-29 | 2017-05-09 | Applied Materials, Inc. | Methods for in-situ calibration of a flow controller |
| TWI583927B (en) * | 2011-09-29 | 2017-05-21 | 應用材料股份有限公司 | Methods for monitoring a flow controller coupled to a process chamber |
| US9772629B2 (en) | 2011-09-29 | 2017-09-26 | Applied Materials, Inc. | Methods for monitoring a flow controller coupled to a process chamber |
| US10222810B2 (en) | 2011-09-29 | 2019-03-05 | Applied Materials, Inc. | Methods for monitoring a flow controller coupled to a process chamber |
| CN104750125A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Calibrating method and device for mass flow controller |
| CN104750125B (en) * | 2013-12-31 | 2017-10-24 | 北京北方华创微电子装备有限公司 | The calibration method and device of a kind of mass flow controller |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100498626C (en) | 2009-06-10 |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |