CN1845337A - 具有长栅极和致密节距的场效应晶体管设计及其制造方法 - Google Patents
具有长栅极和致密节距的场效应晶体管设计及其制造方法 Download PDFInfo
- Publication number
- CN1845337A CN1845337A CNA2006100715160A CN200610071516A CN1845337A CN 1845337 A CN1845337 A CN 1845337A CN A2006100715160 A CNA2006100715160 A CN A2006100715160A CN 200610071516 A CN200610071516 A CN 200610071516A CN 1845337 A CN1845337 A CN 1845337A
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- Prior art keywords
- field
- effect transistor
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- drain region
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
- H01L21/823425—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7858—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/907,568 US20060228862A1 (en) | 2005-04-06 | 2005-04-06 | Fet design with long gate and dense pitch |
US10/907,568 | 2005-04-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1845337A true CN1845337A (zh) | 2006-10-11 |
CN100492661C CN100492661C (zh) | 2009-05-27 |
Family
ID=37064263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100715160A Expired - Fee Related CN100492661C (zh) | 2005-04-06 | 2006-03-29 | 具有长栅极和致密节距的场效应晶体管设计及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060228862A1 (zh) |
CN (1) | CN100492661C (zh) |
TW (1) | TW200727476A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110649027A (zh) * | 2019-09-25 | 2020-01-03 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7282772B2 (en) * | 2006-01-11 | 2007-10-16 | International Business Machines Corporation | Low-capacitance contact for long gate-length devices with small contacted pitch |
US20080001233A1 (en) * | 2006-05-11 | 2008-01-03 | Ashok Kumar Kapoor | Semiconductor device with circuits formed with essentially uniform pattern density |
US7989891B2 (en) * | 2007-05-31 | 2011-08-02 | Globalfoundries Inc. | MOS structures with remote contacts and methods for fabricating the same |
US8062951B2 (en) * | 2007-12-10 | 2011-11-22 | International Business Machines Corporation | Method to increase effective MOSFET width |
US8796759B2 (en) | 2010-07-15 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-like field effect transistor (FinFET) device and method of manufacturing same |
US8871626B2 (en) | 2011-12-20 | 2014-10-28 | International Business Machines Corporation | FinFET with vertical silicide structure |
US8445334B1 (en) | 2011-12-20 | 2013-05-21 | International Business Machines Corporation | SOI FinFET with recessed merged Fins and liner for enhanced stress coupling |
CN106340540B (zh) * | 2015-07-07 | 2020-09-01 | 联华电子股份有限公司 | 半导体元件及填补图案的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166771A (en) * | 1990-01-12 | 1992-11-24 | Paradigm Technology, Inc. | Self-aligning contact and interconnect structure |
US5483104A (en) * | 1990-01-12 | 1996-01-09 | Paradigm Technology, Inc. | Self-aligning contact and interconnect structure |
US6242302B1 (en) * | 1998-09-03 | 2001-06-05 | Micron Technology, Inc. | Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry |
US6605840B1 (en) * | 2002-02-07 | 2003-08-12 | Ching-Yuan Wu | Scalable multi-bit flash memory cell and its memory array |
-
2005
- 2005-04-06 US US10/907,568 patent/US20060228862A1/en not_active Abandoned
-
2006
- 2006-03-29 CN CNB2006100715160A patent/CN100492661C/zh not_active Expired - Fee Related
- 2006-04-03 TW TW095111835A patent/TW200727476A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110649027A (zh) * | 2019-09-25 | 2020-01-03 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN110649027B (zh) * | 2019-09-25 | 2022-02-15 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200727476A (en) | 2007-07-16 |
US20060228862A1 (en) | 2006-10-12 |
CN100492661C (zh) | 2009-05-27 |
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