CN1835824A - Cell, system and article for electrochemical mechanical processing - Google Patents
Cell, system and article for electrochemical mechanical processing Download PDFInfo
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- CN1835824A CN1835824A CNA2004800191249A CN200480019124A CN1835824A CN 1835824 A CN1835824 A CN 1835824A CN A2004800191249 A CNA2004800191249 A CN A2004800191249A CN 200480019124 A CN200480019124 A CN 200480019124A CN 1835824 A CN1835824 A CN 1835824A
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Images
Abstract
The invention provides a cell, a system and an article for processing a substrate in an electrochemical mechanical polishing system. A cell for polishing a substrate includes a polishing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper polishing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. A system is provided having a bulk polishing cell and a residual polishing cell. The residual polishing cell includes a biased conductive polishing surface. In further embodiments, the conductive element is protected from attack by process chemistries.
Description
Technical field
Embodiments of the invention relate generally to a kind of electrochemical machinery method for processing and equipment of being used for.
Background technology
Electrochemical machinery planarization (ECMP) is that a kind of being used to removed conductive material by electrochemical dissolution from substrate surface, simultaneously to compare the technology that less mechanical wear is polished this substrate with traditional flatening process.The ECMP system can be used to by the polarity of counter-rotating bias voltage conductive material is deposited on the substrate usually.So that being removed to the electrolyte on every side from substrate, conductive material carries out electrochemical dissolution by between negative electrode and substrate surface, applying bias voltage.Typically, bias voltage is applied to substrate surface by the conductive polishing material of process substrate on it.The polishing of mechanical part is by providing relative motion to carry out between substrate and conductive polishing material, and this conductive polishing material has strengthened from the removal of substrate to conductive material.
Copper is a kind of material that can utilize the electrochemical machinery planarization to polish.Typically, utilize two step process to come polish copper.In the first step, most copper is removed, and typically only stays the copper residue that some protrude on substrate surface.These copper residues are removed in second step or degree of depth polishing step then.
But the removal of copper residue may cause copper part to be recessed under the plane of material around, and these material around are oxide or such as the barrier layer of other materials such as TaN typically.The amount of depression is relevant with the polishing chemical substance and the technological parameter that use in degree of depth polishing step usually, and relevant with the width of the copper part that stands to polish.Because the copper layer does not have homogeneous thickness on entire substrate, do not cause the depression on some parts and remove and remove all copper residues under the situation of all the copper residues on other parts so be difficult in.But, be difficult in single polishing block place at present and remove most of material and residual material.Therefore, those technologies are carried out the major part material on the polishing block that improves the substrate production amount and residual material is removed being optimized for, and providing the copper residue to remove and make depression to minimize simultaneously will be useful.
Therefore, there is demand to the method and apparatus of the improvement that is used for the electrochemical machinery planarization.
Summary of the invention
Embodiments of the invention provide a kind of method and apparatus that is used in electrochemical machinery planarization systems process substrate substantially.In one embodiment, the unit that is used for process substrate comprises the processing liner that is arranged on the platen assembly end face.A plurality of conducting elements are arranged through the planarized surface on top with spaced-apart relation.Arrangement of electrodes is between liner and platen assembly.A plurality of passages pass end face and the platen assembly that is limited between the high pressure chest in the platen assembly forms.
In another embodiment, the system that is used for process substrate comprises the first electrochemical machinery planarization platform and at least one the second electrochemical machinery planarization platform that is arranged in shell.Connecting gear is suitable for transmitting substrate between the planarization platform.The first processing spacer assembly is arranged in the first electrochemical machinery planarization platform and has the insulation of going up planarized surface, and the described insulation planarized surface of going up insulate on the entire substrate machining area basically.A plurality of conducting elements are arranged through the last planarized surface of the first processing spacer assembly with spaced-apart relation.The second processing spacer assembly is arranged in the second electrochemical machinery planarization platform and has the upper conductor planarized surface, and described upper conductor planarized surface conducts electricity on the entire substrate machining area basically.
In another embodiment, provide a kind of electrochemically method of process substrate that is used for.In one embodiment, be used for the method for process substrate electrochemically and comprise the step that contacts with substrate with respect to the electrode biasing conducting element that is electrically coupled to substrate by Working liquids, it makes substrate separate with the conducting element electricity and applies extremely separated conducting element of back bias voltage.
In another embodiment, a kind ofly be used for electrochemically that the method for process substrate comprises such step, it applies the separating part of first electrical bias to substrate surface by a plurality of conducting elements that extend through smoothing material, and applies second electrical bias to substrate surface by the conductive planarization material of even bias voltage.
Description of drawings
Therefore, by with reference to illustrated embodiment in the accompanying drawings, can obtain and the of the present invention more detailed description of the mode of understood in detail the above embodiment of the present invention, the concise and to the point description of above institute.But, it should be noted that accompanying drawing only illustrates exemplary embodiments of the present invention, and therefore be not considered to the restriction of its scope, because the present invention can comprise the embodiment of other effects equivalent.
Fig. 1 is the plane of electrochemical machinery planarization systems;
Fig. 2 is the cutaway view of an embodiment of major part electrochemical machinery planarization (ECMP) platform of Fig. 1 system;
Fig. 3 is the partial sectional view of an embodiment of platen assembly of the major part ECMP platform of Fig. 2;
Fig. 4 is the partial sectional view that passes two contact assemblies of major part ECMP platform;
Fig. 5 A-B is side view and the decomposition view of an embodiment of contact assembly;
Fig. 6 is an embodiment of contact element;
Fig. 7 is the stereogram of another embodiment of major part ECMP platform;
Fig. 8-the 9th, the stereogram of contact assembly and partial sectional view;
Figure 10 is the simplified cross-sectional view of decomposition of another embodiment of major part ECMP platform;
Figure 11 is the simplified cross-sectional view of another embodiment with major part ECMP platform of ball adjusting device;
Figure 12 is the cutaway view of an embodiment of residue ECMP platform;
Figure 13 is the cutaway view of an embodiment with ECMP platform of corrosion protection.
In order to help to understand, use same reference number to come similar elements shared in the indicator diagram in possible place.
The specific embodiment
The embodiment that is used for removing from substrate the system and method for the major part of conductive material and residue is provided.Has the system that is suitable for removing at least two machine table that are arranged in central substrate-transferring conductive material on every side although described to diagram, but expectation is that machine table of the present invention can be arranged with other structure, and/or supply substrate by other form or the structure of substrate transfer structure.In addition, remove conductive material (for example planarization) although following the disclosed embodiments mainly concentrate on from substrate, desired is that technology disclosed herein can be used to electroplate substrate by the polarity of counter-rotating bias voltage.
Fig. 1 has to be used for the electrochemically plane of an embodiment of the planarization systems 100 of the equipment of process substrate.Example system 100 comprises manufacturing place handing-over mouth 102 substantially, loads robot 104 and planarization module 106.Loading robot 104 is arranged near manufacturing place handing-over mouthfuls 102 and planarization module 106 to realize the transmission of substrate 122 between them.
Control and the integration of controller 108 with the module of realization system 100 is set.Controller 108 comprises central processing unit (CPU) 110, memory 112 and auxiliary circuit 114.Controller 108 is coupled to the various parts of system 100 to realize the control of for example planarization, cleaning and transport process.
Manufacturing place handing-over mouth 102 generally includes cleaning module 116 and one or more wafer case 118.Interface machine people 120 is used to transmit substrate 122 between wafer case 118, cleaning module 116 and input module 124.Input module 124 is positioned to help the transmission of substrate 122 between planarization module 106 and manufacturing place handing-over mouth 102 by clamp (for example vacuum clamps or mechanical clamp).
In the described embodiment of Fig. 1, planarization module 106 comprises a major part ECMP platform 128, the 2nd ECMP platform 130 and a CMP platform 132.Is by carrying out in the electrochemical dissolution process of major part ECMP platform 128 from substrate to the removal of conductive material major part.After most of material at major part ECMP platform 128 places is removed, remove remaining conductive material by the processing of second electrochemical machinery at residue ECMP platform 130 places.What expect is the residue ECMP platform 130 that can use in planarization module 106 more than.
After the processing at residue ECMP platform 130 places, carry out traditional chemical-mechanical planarization processing at planarization platform 132 places.Described the example of the traditional CMP technology that is used to remove copper in the U.S. Patent number of authorizing on September 17th, 2,002 6,451,697, its integral body comprises it by reference.Described the example of the traditional CMP technology that is used to remove the barrier layer in the Application No. 10/187,857 that proposed on June 27th, 2002, its integral body comprises it by reference.What expect is that other CMP technology can be carried out alternatively.Because CMP platform 132 is actually traditional, so purpose is for simplicity omitted its further description.
The planarization module 106 of example also comprises the top that is arranged in machine base 140 or transfer station 136 and the turntable 134 on first side 138.In one embodiment, transfer station 136 comprises input buffering platform 142, output buffer table 144, transfer robot 146 and loads cup assembly 148.Input buffering platform 142 is by loading the substrate of robot 104 receptions from manufacturing place handing-over mouth 102.Loading robot 104 also is used to the substrate from the polishing of exporting buffer table 144 is turned back to manufacturing place handing-over mouth 102.Transfer robot 146 is used at buffer table 142,144 and loads mobile substrate between the cup assembly 148.
In one embodiment, transfer robot 146 comprises two grip modules, and each pneumatic gripping that all has by the edge gripping substrate of liner refers to.Transmission machinery people 146 can be side by side transmits with processed substrate to loading cup assembly 148 from input buffering platform 142, simultaneously from loading substrate that cup assembly 148 transmission process to exporting buffer table 144.Authorize the example of having described the transfer station that can more advantageously be used in the U.S. Patent number 6,156,124 of Tobin on December 5th, 2000, its integral body is included in here by reference.
Adjusting device 182 is arranged in each in the close planarization platform 128,132 in the substrate 140.Adjusting device 182 is regulated the smoothing material that is arranged in the platform 128,132 periodically to keep uniform planarization results.
Fig. 2 describes the cutaway view of a kind of planarization head assembly 152 on the major part ECMP platform 128 that is positioned an embodiment.Planarization head assembly 152 generally includes the drive system 202 that is coupled to planarization head 204.Drive system 202 provides rotational motion at least to planarization head 204 usually.Planarization head 204 is driven towards major part ECMP platform 128 in addition, makes the substrate 122 that remains in the planarization head 204 can be arranged to the planarized surface 126 of work in-process against major part ECMP platform 128.Drive system 202 is coupled to controller 108, and controller 108 provides signal to drive system 202 to be used to control the velocity of rotation and the direction of planarization head 204.
In one embodiment, the planarization head can be the TITANHEAD that is made by Applied Materials
TMOr TITAN PROFILER
TMWafer carrier.Usually, planarization head 204 comprises housing 214 and locating ring 224, and locating ring 224 has defined and kept the center of substrate 122 recessed.Locating ring 224 limits the substrate 122 that is arranged in the planarization head 204 and skids off from planarization head 204 belows to prevent the work in-process substrate.Locating ring 224 can be by making such as the plastics of PPS, PEEK etc. or such as conductive material or its some combinations of stainless steel, Cu, Au, Pd etc.Further expectation is that conduction locating ring 224 can be by electrical bias to control electric field in the ECMP process.What expect is the planarization head that can utilize other.
Major part ECMP platform 128 generally includes the platen assembly 230 that is arranged in rotationally in the substrate 140.Platen assembly 230 is supported in the substrate 140 by bearing 238, makes platen assembly 230 to rotate with respect to substrate 140.Substrate 140 is opened by the zone that bearing 238 limits, and be provided for the electricity that is communicated with platen assembly 230, control signal machinery, pneumatic be connected.
The traditional bearing, swivel joint and the collecting ring that are called rotary coupler 276 jointly are set, make electricity, machinery, control signal fluid, pneumatic and connecting between the platen assembly 230 that can be coupling in substrate 140 and rotate.Platen assembly 230 typically is coupled to engine 232, and it provides and turns to platen assembly 230.Engine 232 is coupled to controller 108, and it is provided for controlling the signal of the velocity of rotation and the direction of platen assembly 230.
Lower plate 234 is made by the rigid material such as aluminium usually.In the embodiment shown in Figure 2, upper plate and lower plate 236,234 are by a plurality of securing member 228 couplings.Usually, arrange that between upper plate and lower plate 236,234 a plurality of alignment pins 220 (is illustrated among Fig. 2) are to guarantee the location between them.Upper plate 236 and lower plate 234 can be made by the member of single one alternatively.
Alternatively, magnetic element 240 can be arranged in the platen assembly 230, and is suitable for promoting processing spacer assembly 222 towards platen assembly 230.Magnetic element 240 is coupled to power supply 244 by rotary coupler 276.Expectation be that magnetic element 240 can be coupled to spacer assembly 222 and makes spacer assembly 222 attracted to platen assembly 230.
In the embodiment of Fig. 2, magnetic element 240 magnetically is coupled to and is arranged in the processing spacer assembly 222 or it on or be coupled to the conductive material (metal material just) of processing spacer assembly 222.Magnetic attraction promotion processing spacer assembly 222 between magnetic element 240 and processing spacer assembly 222 makes processing spacer assembly 222 relative platen assembly 230 in process advantageously keep static near the end face 260 of platen assemblies 230.
Magnetic element 240 is arranged as the end face 260 that is parallel to platen assembly 230 usually.Usually this location has strengthened the uniformity of processing spacer assembly 222 near the power of the end face 260 of platen assembly 230.
In one embodiment, magnetic element 240 is to be arranged in the upper plate 236 of platen assembly 230 and the electromagnet between the lower plate 234.Magnetic element 240 can optionally encourage to produce by power supply 244 and attract the biasing force of processing spacer assembly 222 to platen assembly 230.Because can easily adjust the magnetic force that applies by magnetic element 240, so the contact force between processing spacer assembly 222 and the platen assembly 230 can optimally adapt to specific processing routine by power supply 244.In addition, because can easily remove attraction between processing spacer assembly 222 and the platen assembly 230, so processing spacer assembly 222 can easily separate from platen assembly 230 by the electric energy that interrupts being applied to magnetic element 240.Alternatively, process spacer assembly 222 therein and be magnetized and/or comprise under the situation of permanent-magnet material, the polarity of the magnetic force that is produced by magnetic element 240 can be inverted to assist in removing processing spacer assembly 222.Replacedly, magnetic element 240 can be a permanent magnet.
What expect is that magnetic element 240 can be arranged in platen assembly 230 interior or close other positions of platen assembly 230.Also expectation is that hardware and software platform materials for support surface with planarization platform of optional design and different designs can be used and becomes to comprise magnetic element 240 to be provided for processing spacer assembly 222 is fastened to the attraction on the surface of supporting processing spacer assembly 222.
High pressure chest 206 is defined in the platen assembly 230.High pressure chest 206 can partly be formed in upper plate or the lower plate 236,234 at least one.In the embodiment shown in Figure 2, high pressure chest 206 is defined in recessed 208 in the lower surface 262 that partly is formed on upper plate 236.A plurality of holes 210 are formed in the upper plate 236 to be flow through platen assembly 230 equably and contacts with substrate 122 with permission electrolyte in process, and wherein electrolyte is provided to high pressure chest 206 from electrolyte source 248.High pressure chest 206 is partly defined by the capping 212 of the upper plate 236 that is coupled to sealing recessed 208.
Fig. 3 is the partial sectional view of platen assembly 230, and it illustrates an embodiment of capping 212 in further detail.Upper plate 236 is coupled in capping 212 hermetically.In the embodiment shown in fig. 3, a plurality of securing members 312 promote capping 212 against upper plate 236, the high pressure sealing pad 314 of compression arrangement between capping 212 and upper plate 236.High pressure sealing pad 314 can be packing ring, lip packing or with other sealing gasket of processing chemical substance compatibility.
Capping 212 comprises first opening 302, second opening 304 and the 3rd opening 306.First and second openings 302,304 provide and have passed the entrance and exit of capping 212 coupled high voltage chambeies 206 to electrolyte source 248.In one embodiment, first and second openings 302,304 are shot screw thread to hold and the formpiston accessory 308 that is formed on hole 340 pairings in the lower plate 234.Radial seal pad 310 (for example O shape ring or leaf sealing gasket) is arranged between the boring in accessory 308 and hole 340 so that the fluid sealing to be provided, and it prevents that electrolyte from oozing out from high pressure chest 206 by capping 212.
The 3rd opening 306 limits with the sealing gasket 316 that is arranged in the electrolyte in the high pressure chest 206 by isolating the 3rd opening 306.In one embodiment, sealing gasket 316 is positioned at the second high pressure sealing pad, 344 outsides, the first bayonet socket accessory 318 to be provided and to be arranged in additional stopping between the electrolyte in the high pressure chest 206.The 3rd opening 306 is configured to allow the first bayonet socket accessory 318 to pass.The first bayonet socket accessory, 318 coupling contact plates 320 are to the socket 322 that is arranged in the lower plate 234, and wherein contact plate 320 is arranged in the high pressure chest 206 and is coupled to upper plate 236.Socket 322 is coupled to power supply 242 by first power line 324 that is arranged in the passage 326 by rotary coupler 276 (as shown in Figure 2), and passage 326 is formed in the lower plate 234.
Second power line 328 is arranged through lower plate 234, coupled arrangement lower plate 234 around near socket 334 to power supply 242.The second bayonet socket accessory 332 is coupled to the contact member 336 that is arranged in the upper plate 236.Contact member 336 comprises threaded hole 338 or other element of the end face 260 that is exposed to upper plate 236, and it is suitable for electric coupling contact member 336 to processing spacer assembly 222.In the embodiment shown in fig. 3, processing spacer assembly 222 is coupled to power supply 242 by the second bayonet socket accessory 332.
The aligning of bayonet socket accessory 318,322 and alignment pin 220 accessory plates 234,236 carries out fluid and electrical connection simultaneously when upper plate 236 is arranged on the lower plate 234.This has advantageously provided, and firm electricity and fluid is coupled both between the facility of assembling and the plate 234,236.
Additionally with reference to figure 2, processing spacer assembly 222 comprises electrode 292 and planarization part at least 290.At least one contact assembly 250 at the substrate that extends on the processing spacer assembly 222 and be suitable for electric coupling processing on processing spacer assembly 222 to power supply 242.
Electrode 292 typically is made up of the conductive material such as stainless steel, copper, aluminium, gold, silver and tungsten.Electrode 292 can be solid, electrolyte is impermeable, electrolyte is permeable or the perforation.In the embodiment shown in fig. 3, electrode 292 is configured to allow electrolyte cross.Electrode 292 can be permeable, has hole or its combination of passing its formation.Electrode 292 is arranged on the end face 260 of platen assembly 230 and by platen assembly 230 and is coupled to power supply 242.
Be suitable for generally including the planarized surface of insulation basically from the embodiment that substrate 122 is removed the processing spacer assembly 222 of material major part.Because will cover substrate 122 substantially from the conductive material that substrate 122 is removed, so do not need to be used for the contact of bias voltage substrate 122 basically.Being suitable for generally including from the embodiment of processing spacer assembly 222 that substrate 122 is removed the residue of materials is the planarized surface of conductor basically.Because will comprise the island material of the separation that is arranged on the substrate 122 from the conductive material that substrate 122 is removed, so need be used for the more contact of bias voltage substrate 122.
In one embodiment, the planarization layer 290 of processing spacer assembly 222 can comprise the planarized surface 364 such as the polyurethane liner of insulation.At the u.s. patent application serial number 10/455 of people such as Y.Hu in proposition on June 6th, 2003, the u.s. patent application serial number 10/455 that people such as 941 (title is " CONDUCTIVEPLANARIZING ARTICLE FOR ELECTROCHEMICAL MECHANICALPLANARIZING " (the conductive planarization article that are used for the electrochemical machinery planarization)) and Y.Hu proposed on June 6th, 2003,895 (title is " CONDUCTIVE PLANARIZING ARTICLE FOR ELECTROCHEMICALMECHANICAL PLANARIZING " (the conductive planarization article that are used for the electrochemical machinery planarization)) have been described the example that can be used to realize processing spacer assembly of the present invention, and both's its integral body by reference is included in here.
Fig. 4 is the partial sectional view that passes two contact assemblies 250 of major part ECMP platform 128, and Fig. 5 A-B is one side view and decomposition view in the contact assembly 250 shown in Fig. 4.Platen assembly 230 comprises from its protrusion and is coupled at least one contact assembly 250 of power supply 242 that it is suitable for the surface of bias voltage substrate 122 in process.Contact assembly 250 can be coupled to platen assembly 230, the part of processing spacer assembly 222 or the element of separation.Although two contact assemblies 250 shown in Figure 4 can utilize any amount of contact assembly, and can be distributed in respect to the center line of upper plate 236 in any amount of structure.
Although for Fig. 4, the embodiment of following contact assembly 250 has described the bobbin type contact, and contact assembly 250 can comprise having conductive overlayer or surperficial structure or the assembly that is suitable for electrical bias substrate 122 alternatively.For example, contact assembly 250 can comprise and have the upper strata of being made by conductive material or conducing composite material (just conducting element with the material monolithic ground dispersion of forming upper surface or comprise the material of forming upper surface) for example to have the polymeric matrix or the conductive coating fabric that are dispersed in conductive particle wherein.In the u.s. patent application serial number 60/516,680 that proposed on November 3rd, 2003, described other example of suitable contact assembly people such as Hu, it has been included in here by causing its integral body.
In one embodiment, each in the contact assembly 250 all comprises hollow housing 402, adapter 404, ball 406, contact element 414 and gripping sleeve 416.Ball 406 has conductive outer surface and is movably disposed within the housing 402.Ball 406 can be arranged in the primary importance of the part of on planarized surface 364, extending that has ball 406 at least and ball and the second place at least that planarized surface 364 flushes in.Ball 406 is generally suitable for by contact plate 320 electric coupling substrates 122 to power supply 242.
Housing 402 by with the insulating material manufacturing of processing chemical substance compatibility.In one embodiment, housing 402 is made by PEEK.Housing 402 has first end 408 and second end 410.Driver part 412 be formed in first end 408 and/or on first end 408 to help that contact assembly 250 is installed to contact plate 320.Driver part 412 can be hole, groove or a plurality of groove that is used for monkey wrench, recessed driver part (such as TORX or hexagonal driving etc.) or the driver part (first-class such as spanner platform or hexagonal) that protrudes.First end 408 additionally comprise prevent ball 406 pass housing 402 first ends 408 the seat 426.Seat 426 can comprise alternatively being formed on and wherein allows fluid to flow out one or more grooves 448 of housing 402 between ball 406 and seat 426.Keep fluid to pass the possibility that ball 406 can minimize processing chemical substance injury ball 406.
Among the embodiment that describes in Fig. 4 and Fig. 5 A-B and describe in detail in Fig. 6, contact element 414 comprises having from the annular substrates 442 of annular substrates 442 with a plurality of deflections 444 of polarity array extension.Deflection 444 comprises two support components 602 that extend to top 608 from substrate 442.To define opening 610, as described below, opening 610 descends with a little pressure and helps to flow through contact element 416 support component 602 by a plurality of ring 604 couplings.Be suitable for contacting ball 406 contact pad designed 606 at 608 places, top of each deflection 444 coupling support component 602.Deflection 444 is usually by being suitable for using the elasticity of processing chemical substance and the material manufacturing of conduction.In one embodiment, deflection 444 is by gold-plated beryllium copper manufacturing.
Turn back to Fig. 4 and Fig. 5 A-B, gripping sleeve 416 comprises the flared type head 524 that has from the screw rod 522 of its extension.Gripping sleeve can be by insulating materials or conductive material, or its combination makes, and in one embodiment, its by with housing 402 identical materials manufacturings.It is the acute angle place at the center line with respect to contact assembly 250 that flared type head 524 keeps deflection 444, make contact pad designed 606 of contact element 414 be positioned in to open around the surface of ball 406 preventing in the assembling of contact assembly 250 bending, constraint and/or damage to deflection 444, and the scope by ball 406 motions.
The bar 522 of gripping sleeve 416 is arranged the hole of passing in the substrate 442 546, and is screwed in the threaded section 440 of the passage 436 that passes adapter 404 formation.The passage 418 that passes gripping sleeve 416 formation comprises the driver part 420 at the place, end that is arranged in the flared type head 524.Similarly, passage 436 is included in the driver part 438 facing to the place, end of threaded section 440.Driver part 420,430 can be similar to above-mentioned those, and in one embodiment, and they are to be suitable for the hexagonal hole that uses with hex driver.Gripping sleeve 424 is secured to the plane of the good electrical connection of guaranteeing between contact element 414 and the adapter 404, and does not damage contact element 414 or other parts.
Adapter 404 usually by with the conductive material manufacturing of processing chemical substance compatibility, and in one embodiment, it is by the stainless steel manufacturing.Adapter 404 comprises the annular lip 432 of the boss 434 that has the threaded rod 430 that extends from a side and extend from opposite side.Threaded rod 430 is suitable for cooperating with the contact plate 320 that is recessed in 208 that is arranged in upper plate 236, and each ball 406 in the contact plate 320 coupling contact assemblies 250 is to power supply 242.
Boss 434 is accommodated in second end 410 of housing 402, and is provided for the surface of clamping contacting element 414 to it.Boss 434 additionally comprises at least one screwed hole 506 that is arranged on boss 434 sides, itself and securing member 502 engagements of passing hole 504 layouts that are formed in the housing 402, and rugged housing 402 is trapped in wherein to adapter 404 and with ball 406 thus.In the embodiment shown in Fig. 5 A, illustrate and be used for by three securing members of countersunk 504 coupling housings 402 to adapter 404.Expectation to be that housing 402 and adapter 404 can come by optional method or device fastening, for example stake is fixed, adhesion, bonding, interference fit, pin, spring catch, rivet and locating ring etc.
In one embodiment, this is endorsed with from such as selecting the flexibility of polyurethane or the elastomeric polymer, distortion when it contacts with substrate 122 in planarization process when ball 406.Some examples of the material that can be used to examine comprise elasticity organic polymer, ethene-third rare-diene copolymers (EDPM), polyalkane, polyyne (polyalkynes), polyester, polyaromatic hydrocarbon, alkene/alkynes, polyimides, Merlon, polyurethane with and combination.Other example of the material of nuclear comprises inorganic polymer, such as siloxanes, or the organic and inorganic material that combines, such as polysilicon and polysilane.When ball 406 distortion, the contact area between ball 406 and the substrate increases, and has improved ball 406 thus and has been arranged in electric current between the conductive layer on the substrate 122, has therefore improved planarization results.
In one embodiment, ball 406 has copper (comprising copper alloy) outer surface, and can be solid, hollow or have different core materials.In another embodiment, ball 406 can comprise the noble metal outer surface.In another embodiment, ball 406 can comprise the TORLON with the gold layer coating of conduction
Polymer core, it utilizes copper as TORLON
And the seeding layer between the gold layer.Another example is the TORLON that is coated with copper or other conductive material layer
Or other polymer core.Other suitable soft conductive material includes but not limited to silver, copper, tin etc.
Therefore the power on the ball 406 is consistent with the differing heights of ball 406 in the housing 402, and gap or groove 428 are formed on the top (608 among Fig. 6) to hold deflection 444 in the inwall of housing 402, flow through ball 406 to prevent limit electrolysis liquid.An end of arranging away from seat 426 of groove 428 be usually configured to when the position of ball 406 in reduction the diameter place of ball 406 or below.
In one embodiment, the processing chemical substance can be by keeping in touch assembly 250 and/or ball 406 minimizes to the electrochemistry on contact assembly 250 and/or the ball 406 infringement under substrate in planarization process.This can finish on ball 406 to keep substrate by the relative motion of location contact assembly 250 between preposition or design substrate and platen assembly 230.Because ball 406 is depressed, so smoothing material 222 can be configured to provide the fluid sealing around each ball 406, prevent to pass through between electrode 292 and the ball 406 the direct circuit footpath of electrolyte thus, make thus that with respect to ball 406 conductive material to the substrate preferentially takes place chemical reaction.
Replacedly, or additionally, as shown in figure 13, the processing chemical substance can minimize by using corrosion protection 1302 infringement of the electrochemistry on contact assembly 250 and/or the ball 406.Corrosion protection 1302 generally includes the conductive material 1304 around contact assembly 250.In one embodiment, conductive material 1304 is coupled to power supply 242.Conductive material 1304 can be coupled to power supply 242 by housing 402, contact plate 320 or by the connection that separates.Replacedly, conductive material 1304 can be coupled to different power supply (not shown).Conductive material 1304 can comprise the non-corrosive material such as graphite, conducting polymer, noble metal etc.Replacedly, conductive material 1304 can comprise and contact element identical materials, for example copper.
Separate conductive material 1304 in gap 1306 with electrode 292.Replacedly, gap 1306 can be used with the insulator of processing the chemical substance compatibility (for example PEEK) and fill.In process, opening 468 usefulness are filled from the electrolyte of electrolyte source 248.Because both contacts electrolyte and conductive material 1304 and electrode 292, are minimized so the local potential between electrolyte and the ball 406 differs from, the electrolyte that has reduced ball 406 thus corrodes.
Although the embodiment with respect to the contact assembly shown in Fig. 4 250 has described corrosion protection 1302, corrosion protection 1302 as described herein goes in other contact assembly that the corrosion of the embodiment of contact assembly 250 or contact member need be minimized.In a plurality of contacts were arranged in embodiment in the housing, for example in the embodiment shown in fig. 9, corrosion protection 1302 can be arranged on around each contact, or replacedly around housing.
In another embodiment, can be by the 452 coupling purge flow body sources 450 of the selector valve between electrolyte source 248 and the contact assembly 250.Selector valve 452 allow such as the washing fluid of hydrogen peroxide at one's leisure between (when not having substrate on platen assembly 230 when polished) flow through ball 406, damage to prevent ball 406 processed chemical substances.Expectation be that other structure can be used to optionally be coupled electrolyte source 248 and purge flow body source 450 to high pressure chest 206, or electrolyte source 248 and purge flow body source 450 can comprise single fluid delivery system.Also expectation is in simple structure, keep the dipping of processing chemical substance around ball to flow having prevented basically the self-catalyzed reaction (by removing the catalyst byproduct) in the processing chemical substance always, minimize chemical damage on the ball by eliminating the static processing chemical substance that exists thus away from ball.
Be back to Fig. 2, platen assembly 230 can comprise the sonic transducer 254 that is coupled on it.Sensor 254 is suitable for making 230 vibrations of platen assembly, causes the motion and/or the rotation of ball 406 in housing 402 (see figure 4)s of contact assembly 250 thus.It will be appreciated by those skilled in the art that term " coupling " comprise with connection, embedding, fastening, lamination, die casting, bonding, adhere to or, make sensor 254 can cause the motion of ball 406 otherwise with respect to platen assembly 230 alignment sensors 254.Sensor 254 can be energized to cause the motion of ball in the contact assembly 250 in free time between the substrate planarization, reduces to process the influence of chemical substance to ball 406 thus.Replacedly, by and the rolling disc made of the soft material (for example PEEK, PPS) of processing chemical substance compatibility can be at one's leisure between in cover contact assembly to cause the rotation of ball, minimize the following static chemical damage of describing with reference to Figure 12 thus to ball.
Alternatively, platen assembly 230 can comprise the sacrificial metal 258 that is arranged in wherein.Sacrificial metal 258 can expose by the form of the opening in the end face 260 of platen assembly 230, depression or slit 256.Sacrificial metal 258 can be located adjacent to or away from contact assembly 250, as long as be arranged in processing chemical substance on the end face 260 of smoothing material 222 can get wet continuously sacrificial metal 258 and ball 406.Sacrificial metal 258 additionally is electrically coupled to ball 406 (see figure 4)s by platen assembly 230.Sacrificial metal 258 is formed by the material of for example zinc and so on, its with respect to the material of the outer surface of forming ball 406 preferably with the processing chemical reaction, minimize of the infringement of processing chemical substance thus to ball 406.The method that is used to protect ball as described herein can be made to be used for protecting ball not processed the infringement of chemical substance individually or together.
Fig. 7 is the stereogram of another embodiment of major part ECMP platform 790 with another embodiment of the contact assembly 700 that is arranged in wherein, and Fig. 8-the 9th, the stereogram of contact assembly 700 and partial sectional view.ECMP platform 790 comprises the platen assembly 750 that supports processing spacer assembly 760 (partly shown in Figure 7).Platen assembly 750 comprises at least one contact assembly 700 from its protrusion, and contact assembly 700 is coupled to power supply 242.Contact assembly 700 is suitable for the surface (as shown in Figure 9) of electrical bias substrate 122 in process.Although a center that contact assembly 700 is coupled to platen assembly 750 shown in Figure 7 can be used any amount of contact assembly and can be distributed in respect to the center line of platen assembly 750 in any amount of structure.As above with respect to described in Fig. 4, contact assembly 700 also comprises the structure with the conductive upper surface that is suitable for bias voltage substrate 122.
Processing spacer assembly 760 can be any spacer assembly that is suitable for process substrate, and it comprises above-mentioned any embodiment.Processing spacer assembly 760 can comprise electrode 962 and planarization layer 966.In one embodiment, the planarization layer 966 of processing spacer assembly 760 can comprise the insulation planarized surface 964 such as the polyurethane liner.In another embodiment, the planarization layer 966 of processing spacer assembly 760 can comprise planarized surface 964, its be conduction or by making such as the conducing composite material with the polymeric matrix that is dispersed in conductive particle wherein or conductive coating fabric (just conducting element with the material monolithic ground dispersion of forming planarized surface or comprise the material of forming planarized surface).Therein among the embodiment of planarized surface 964 conductions, planarized surface 964 and electrode 962 can be coupled to power supply 242 (being illustrated by the broken lines) via switch 996, switch 996 allow electricity by selectively between contact assembly 700 and conductive planarization surface 964 conversion helping respectively, and not from processing spacer assembly 760 substrate 122 of slinging from the removal of 122 pairs of major part metals of substrate with to the removal of residue metal.What expect is that major part ECMP platform 128 can be constructed with conduction processing spacer assembly similarly.
In process, the ball 406 that is arranged in the housing 802 drives towards planarized surface 760 by at least one quilt in spring, buoyancy or the mobilization force.Ball 406 by contact element 414 and lower plate 806 electric coupling substrates 122 to power supply 242 and contact jaw 910.The electrolyte that flows through housing 802 provides the conductive path between the substrate 122 of electrode 962 and bias voltage, drives the electrochemical machinery planarization process thus.
In the embodiment shown in fig. 9, high pressure chest 940 can be formed in the lower plate 942 of platen assembly 750.Electrolyte source 248 is coupled to high pressure chest 940 also mobile electrolyte to planarized surface 760 by the opening 902 of contact assembly 700.In this structure, top board 944 can be the parts with lower plate 942 one alternatively.High pressure chest 940 can replacedly be arranged in the top board 944 as mentioned above.
Figure 10 is the simplified cross-sectional view of decomposition of another embodiment of major part ECMP platform 1000.Major part ECMP platform 1000 comprises platen assembly 1002, the processing spacer assembly 1004 that its support substrates (not shown) is processed thereon.Electrolyte can pass platen assembly 1002 or be transferred to the upper surface of smoothing material 1004 by the nozzle 1006 of locating near the upper surface of processing spacer assembly 1004 from electrolyte source 248.
Spacer assembly 1004 shown in Figure 10 is coupled to power supply 242 and comprises conductive gasket 1012, and conductive gasket 1012 is clamped into secondary liner 1014 between itself and the electrode 1016.Typically, conductive gasket 1012, secondary liner 1014 and the electrode 1016 formation one that tightens together, it helps removal and the replacement of spacer assembly 1004 from platen assembly 1002.Replacedly, conductive gasket 1012, secondary liner 1014 and electrode 1016 can be by other method or its combination couplings, these methods comprise make, bond, the heat stake is fixed, riveted joint, screw connects and clamping etc.
Conductive gasket 1012 comprises cushion body 1018 and one or more conducting element 1020.Conducting element 1020 is coupled to power supply 242 and is suitable for extending (coplane or be exposed on the upper surface 1008 of cushion body 1018) from the upper surface 1008 of cushion body 1018, and the upper surface 1008 of cushion body 1018 is in the face of the surface (as shown in Figure 2) of planarization head 204 with contact substrate 122.
Cushion body 1018 can by with the polymeric material manufacturing of processing chemical substance compatibility, its example comprises polyurethane, Merlon, fluoropolymer, PTFE, PTFA, polyphenylene sulfide or its combination, and other is used in the smoothing material of planarization substrate surface.Can apply one or more layers conductive material on the gasket material.Cushion body 1018 can be to have the polymer adhesive that suspends and be dispersed in conducting element 1020 wherein.Exemplary materials comprises that those are made by polyurethane and/or the polyurethane that is mixed with filler, and filler can be from being positioned at Neware, and the Rodel company of Delaware obtains by commercial sources.Other traditional planar formed material such as compressible material layer also can be used for cushion body 1018.Compressible material includes but not limited to the soft material such as the compression felt fiber that leaches with urethanes or foam.Cushion body 1018 is typically about 10 to about 100 mil thick.
Cushion body 1018 has first side 1022 and second side 1024.First side 1022 is suitable for contact substrate 122 in process, and can comprise that groove, embossing or other texture are to promote planarization performance.Cushion body 1018 can be solid, electrolyte is impermeable, electrolyte is permeable or the perforation.First side 1022 can comprise alternatively that one or more grooves 1026 or other keep the parts of conducting element 1020.In the embodiment shown in fig. 10, a plurality of openings 1010 that are suitable for allowing electrolyte to flow through of cushion body 1018 usefulness are bored a hole.
Conducting element 1020 can comprise conducting polymer, with compound polymer, conducting metal or the polymer of conductive material, conductive filler, graphite material or conduction dopant material or its combination.Conducting element 1020 has very big resistivity or very big surface resistivity usually, is approximately 10 Ω-cm or littler.Conducting element 1020 can be a plurality of conductive fibers, support and/or flexible finger, is for example adding the carbon fiber that contacts substrate man-hour or other conduction, submissive (just flexible) material.Replacedly, conducting element 1020 can be roller, ball, bar, rod, net or help to be arranged in substrate on the conductive gasket 1012 and other shape of the contact of the conduction between the power supply 242.
At conducting element 1020 is that conductive filler, particle or other are arranged among the embodiment of the material in the polymer adhesive 1030; or be to have among the embodiment of fabric 1032 of conductive coating (having conductive foil disposed thereon 1034 alternatively) at conducting element 1020, cushion body 1018 can have voltage on the whole width of processing spacer assembly 1004 distributed uniform of conduction backing 1036 to guarantee to be applied by power supply 242.Alternatively, such embodiment can also comprise the insert layer 1038 that is arranged between conduction backing 1036 and the secondary liner 1014.Insert layer 1038 is harder than secondary liner 1014 usually, and provides the mechanics to cushion body 1018 to support.The u.s. patent application serial number 10/140 that proposes on May 7th, 2002, the u.s. patent application serial number 10/211 that on August 2nd, 010 and 2002 proposed, described the example that can be used to realize conductive gasket of the present invention in 262, both's its integral body by reference is included in here.
Secondary liner 1014 is coupled to second side 1022 of cushion body 1018.Secondary liner 1014 is typically made by the material softer or submissiveer than the material of cushion body 1018.Intensity between cushion body 1018 and the secondary liner 1014 or nonhomogeneous hardness can be selected to planarization/plating performance that generation needs.Secondary liner 1014 also can be compressible.The example of suitable backing material includes but not limited to foamed polymer, elastomer, felt, impregnated felt and the plastics with planarization chemical substance compatibility.
Secondary liner 1014 can be solid, electrolyte is impermeable, electrolyte is permeable or perforation.In an embodiment shown in Figure 3, secondary liner 1014 is configured to allow electrolyte cross, and can be permeable, has hole or its combination of passing its formation.In the embodiment shown in fig. 3, secondary liner 1014 usefulness are suitable for a plurality of openings 1028 perforation that electrolyte flows through.The opening 1028 of secondary liner 1014 typically but not necessarily align with the opening 1010 of cushion body 1018.
Electrode 1016 typically is made up of the anti-corrosion electric conducting material, for example metal, electrical conductivity alloy, the fabric that scribbles metal, conducting polymer, conductive gasket etc.Conducting metal comprises Sn, Ni, Cu, Au etc.Conducting metal also comprises the corrosion resistant metal such as Sn, Ni or Au that scribbles on it such as Cu, Zn, Al isoreactivity metal.Electrical conductivity alloy comprises inorganic alloys and such as metal alloys such as bronze, brass, stainless steel or palladium ashbury metals.The fabric that scribbles metal can be to cover yarn fabric or the non-woven fleece that is coated with any corrosion resistant metal.Conductive gasket is formed the conductive filler that is arranged in the polymeric matrix.Electrode 1016 also should by with the material manufacturing of electrolyte chemical substance compatibility, when using the multizone electrode, to minimize crosstalking between the zone (cross-talk).For example, stable metal can minimize the zone and crosstalks in the electrolyte chemical substance.
When metal was used as the material of electrode 1016, it can be a solid sheet.Replacedly, electrode 1016 can be formed by wire netting, maybe can be perforated to be increased to the adhesion of articulamentum.Electrode 1016 also can be loaded to be increased to the adhesion of articulamentum with adhesion promoter.The electrode 1016 that is perforated or forms with wire netting also has bigger surface area, and it has further increased the substrate clearance in process.
When electrode 1016 is made by the sheet metal of wire netting, punching or conductive fabric, a side of electrode 1016 can with polymeric layer come stacked, apply or cover, it sees through opening in the electrode 1016 further to be increased to the adhesion of articulamentum.When electrode 1016 was formed by conductive gasket, the polymeric matrix of conductive gasket can have the bonding force that is applied to articulamentum is had high affinity or interaction.
In one embodiment, electrode 1016 is coupled to the side facing to cushion body 1018 of secondary liner 1014.Electrode 1016 can be solid, electrolyte is impermeable, electrolyte is permeable or the perforation.In the embodiment shown in fig. 3, electrode 1016 is configured to allow electrolyte cross.Electrode 1016 can be permeable, has hole or its combination of passing its formation.Electrode 1016 is arranged on the upper surface 1060 of platen assembly 1002, and is coupled to power supply 242.The lead of coupling electrode 1016 and conducting element 1020 can utilize one or more breakers 1066 to be coupled to removal and the replacement of power supply 242 further to help smoothing material 1004.Also expectation is that electrode 1016 and other electrode as described herein can comprise a plurality of electrode parts that can independent bias voltage, for example coaxal electrode, arc-shaped electrode etc.Also expectation is that interface between the electrode part can have interlocking or non-linear configuration.
Main reference Fig. 2 describes the part of the exemplary mode of operation of system of processing 100.In operation, substrate 122 remains in the planarization head 204 and moves on the processing spacer assembly 222 on the platen assembly 230 that is arranged in major part ECMP platform 1128.Planarization head 204 descends towards platen assembly 230 and contacts with smoothing material to place substrate 122.Electrolyte is provided to processing spacer assembly 222 by exporting 274, and flows in the processing spacer assembly 222.
Bias voltage is applied between the electrode 1016 of the conducting element 362 of conductive gasket 1012 and spacer assembly 222 from power supply 242.Conducting element 362 contacts and applies with substrate and is biased into there.The electrolyte of filling the opening 312,318 between electrode 1016 and the substrate 122 provides conductive path between power supply 242 and the substrate 122 to drive the electrochemical machinery planarization process, and it causes the removal that is arranged in substrate 122 lip-deep conductive materials such as copper by the anodic solution method.
In case substrate 122 is by removing by planarization fully at the conductive material at major part ECMP platform 128 places, then planarization head 204 is raised to remove substrate 122 with platen assembly 230 with process contacting between the spacer assembly 222.Substrate 122 can be sent to another major part ECMP platform, residue ECMP platform 130 or CMP platform 132, is used for further processing before removing from planarization module 106.
Figure 11 is the simplified cross-sectional view of an embodiment with major part ECMP platform 1100 of ball adjusting device 1102.Ball adjusting device 1102 is arranged near platen assembly 230, and can rotate between the primary importance gap of platen assembly 230 and the second place on the platen assembly 230, as shown in figure 11.
In one embodiment, liner 1104 can be by the polymeric material manufacturing.Replacedly, liner 1104 can be by the conductive material manufacturing, for example metal, conducting polymer, have the polymer that is arranged in conductive material wherein.At liner 1104 is among the embodiment of conductor, and liner 1104 can not processed the injury of chemical substance by back bias voltage with further protection ball 406.Expectation be that above-mentioned other method that is used to protect ball 406 not processed the chemical substance injury can be used for cooperating with adjusting device 1102, or make up in any other mode.
Figure 12 is the cutaway view of an embodiment of residue ECMP platform 130.The 2nd ECMP platform 130 generally includes platen 1202, and it supports the processing spacer assembly 1204 of full conduction.Platen 1202 can be configured to be similar to above-mentioned platen assembly 230 to transmit electrolyte by processing spacer assembly 1204, perhaps platen 1202 can have the fluid transfer arm 1206 near its layout, and it is configured to supply electrolyte to the planarized surface of processing spacer assembly 1204.
In one embodiment, processing spacer assembly 1204 comprises the insertion liner 1212 that is clipped between conductive gasket 1210 and the electrode 1214.Conductive gasket 1210 is basically in its entire top finished surface conduction, and, for example have the polymeric matrix that is dispersed in conductive particle wherein or conductive coating fabric etc. usually by conductive material or conducing composite material (just conducting element disperses integratedly with the material of forming planarized surface or comprises the material of forming planarized surface) manufacturing.Conductive gasket 1210, insertion liner 1212 and electrode 1214 can be similar to above-mentioned conductive gasket 966,1012, backing 1014 and electrode 1016 and make.Processing spacer assembly 1204 is normally permeable, or is perforated with between the end face 1220 that allows electrolyte cross electrode 1214 and conductive gasket 1210.In the embodiment shown in fig. 12, processing spacer assembly 1204 flows through to allow electrolyte by opening 1222 perforation.In one embodiment, conductive gasket 1210 is made up of the conductive material that is arranged on the polymeric matrix, and wherein polymeric matrix is arranged on the conductive fiber, for example is arranged in the tin particles in the polymeric matrix on the establishment copper that scribbles polymer.Conductive gasket 1210 also can be used to the contact assembly 700 among the embodiment of Fig. 7.
Main reference Figure 12 describes another part of the exemplary mode of operation of system of processing 100.In operation, the substrate 122 that remains in the planarization head 204 moves on the processing spacer assembly 1204 on the platen assembly 1202 that is arranged in residue ECMP platform 130.Planarization head 204 descends towards platen assembly 1202 and contacts with the end face 1220 of conductive gasket 1210 to place substrate 122.Electrolyte is supplied to processing spacer assembly 222 by transfer arm 1206, and flow into processing spacer assembly 1204.
Bias voltage is applied between the electrode 1214 of the end face 1220 of conductive gasket 1210 and spacer assembly 1204 from power supply 1218.The end face 1220 of conductive gasket 1210 contacts and applies electrical bias thereunto with substrate.The electrolyte of filling the opening 1222 between electrode 1214 and the substrate 122 provides conductive path between power supply 1218 and the substrate 122 to drive the electrochemical machinery planarization process, and it causes the removal that is arranged in substrate 122 lip-deep conductive materials such as copper by the anodic solution method.Because the end face 1220 of conductive gasket 1210 conducts electricity fully, so can be removed effectively such as the residual materials by the discrete copper island of not removing fully in the processing at major part ECMP platform 128 places.
In case substrate 122 is by removing by planarization fully at the conductive material at residue ECMP platform 130 places, then planarization head 204 is raised to remove substrate 122 with platen assembly 1202 with process contacting between the spacer assembly 1204.Substrate 122 can be sent to another residue ECMP platform or a CMP platform 132, is used for further processing before removing from planarization module 106.
Like this, the invention provides a kind of electrochemically improved equipment and method of planarization substrate of being used for.This equipment advantageously helps to remove major part and residual material effectively from substrate, prevents that processing component is damaged in the idling cycle between processing simultaneously.Also expectation is to be arranged to equipment as described herein can construct with major part ECMP platform 128 separately, construct with residue ECMP platform 130 separately, with constructing with the one or more major parts and/or the residue ECMP platform 130 of traditional CMP platform 132 cooperative arrangement, or with its arbitrarily combination construct.Also expectation is that method and apparatus as described herein can be used for deposition materials on substrate by the polarity that counter-rotating is applied to the bias voltage of electrode and substrate.
Although the aforementioned embodiments of the invention that relate under the situation that does not break away from base region of the present invention, can design other or another embodiment of the present invention, and its scope are determined by claims.
Claims (42)
1. unit that is used for process substrate comprises:
Has surface-supported platen assembly;
Be arranged in the electrode on the described platen assembly;
Be defined in the high pressure chest in the described platen assembly; And
Pass a plurality of passages that described platen assembly forms, described passage is coupled described stayed surface to described high pressure chest.
2. unit as claimed in claim 1 also comprises:
Be arranged on the described platen assembly and have the processing liner of going up the insulation finished surface, the described insulation finished surface of going up is suitable for processing substrate on it; And
Be arranged in described one or more conducting elements of going up on the finished surface with the described substrate of electrical bias;
3. unit as claimed in claim 1, wherein said platen assembly also comprises:
Top board, the first that it comprises end face and has described each passage that passes its formation at least; And
The conduction contact plate, it has the surface arrangement of the described top board of described processing liner disposed thereon relatively, and is electrically coupled to described conducting element, and described conduction contact plate has the second portion of described each passage that passes its formation at least.
4. unit as claimed in claim 3, wherein said conductive plate are arranged in the described high pressure chest that is formed in the described platen assembly.
5. unit as claimed in claim 4, at least one in wherein said one or more conducting elements comprises:
Ball; And
Adapter, its electric coupling is between described ball and described conduction contact plate.
6. unit as claimed in claim 5, the polymer manufacturing that scribbles skin of wherein said ball.
7. unit as claimed in claim 2, wherein said one or more conducting elements also comprise:
A plurality of balls, it is suitable in process bias voltage and is arranged in described substrate on the described finished surface; And
Housing, it keeps described ball.
8. unit as claimed in claim 7 also comprises:
Electrolyte source, it is suitable for making process fluid to flow to described finished surface by described housing.
9. unit as claimed in claim 3, wherein said platen assembly comprises:
Lower plate, its described relatively end face is coupled to described upper plate;
First electric terminal, it is arranged in the described lower plate; And
Second electric terminal, it is arranged in the described contact plate and is coupled to described conducting element, and described first and second electric terminals are with the coupling of public affairs/mother's structure.
10. unit as claimed in claim 9, wherein said platen assembly also comprises:
Sealing gasket, it isolates described second electric terminal from described high pressure chest fluid ground.
11. unit as claimed in claim 10, wherein said platen assembly also comprises:
The capping plate, it limits described high pressure chest facing to described contact plate;
The first fluid port, it is arranged in the described capping plate;
Second fluid port, it is arranged in the described lower plate and with described first fluid port and cooperates; And
Electrolyte source, it is coupled to described second fluid port.
12. unit as claimed in claim 2, wherein said platen assembly also comprises:
Magnetic element, it is arranged in the described platen assembly and is suitable for attracting described processing liner towards described platen assembly.
13. unit as claimed in claim 12, wherein said magnetic element also comprises:
Permanent magnet or electromagnet.
14. unit as claimed in claim 2, wherein said one or more conducting elements also comprise:
Conductive overlayer, it comprises conductive material, be arranged at least a in the fabric of conducting element in the polymeric matrix or conductive coating.
15. unit as claimed in claim 2, wherein said liner also comprises:
Be coupled to described electrode and have the upper strata of non-conductive finished surface;
Pass first group of hole that described upper strata forms, be used to expose described electrode layer to described finished surface; And
Pass at least one opening that described upper strata and described electrode form.
16. unit as claimed in claim 15, wherein said first group of hole exposes the upper surface of described electrode.
17. unit as claimed in claim 16, wherein said at least one opening passes the single passage that is formed centrally in described upper strata and the conductive layer.
18. unit as claimed in claim 15 also comprises the secondary liner that is clipped between described upper strata and the described electrode.
19. unit as claimed in claim 18, wherein said secondary liner, described conductive layer and described upper strata are fixed by compression moulding, stake, snapping, adhesion and bonding at least one be coupled.
20. unit as claimed in claim 15, but wherein said electrode also comprises the electricity zone of a plurality of bias voltages independently.
21. unit as claimed in claim 15, wherein said upper strata is by the polyurethane manufacturing.
22. unit as claimed in claim 15, wherein said conducting element also comprises:
Conductive material layer.
23. unit as claimed in claim 15, wherein said conducting element also comprises:
Be arranged in the conductive material in the polymeric binder layer; And
Be arranged in the tissue layer between described adhesive phase and the described electrode.
24. a system that is used for process substrate comprises:
Shell;
Be arranged in the first electrochemical machinery machine table in the described shell;
The first processing spacer assembly, it is arranged in the described first electrochemical machinery machine table and has the insulation of going up finished surface, and described upward insulation finished surface is nonconducting on the whole first substrate machining area basically;
One or more conducting elements, it is exposed and is arranged in described first substrate of processing on the liner with contact;
Be arranged in the second electrochemical machinery machine table in the described shell;
The second processing spacer assembly, it is arranged in the described second electrochemical machinery machine table and has the conduction of going up finished surface, and the described conduction finished surface of going up conducts electricity on the whole second substrate machining area basically; And
Connecting gear, it is suitable for transmitting substrate between the described first and second electrochemical machinery machine table.
25. system as claimed in claim 24, the wherein said first processing spacer assembly comprises:
Comprise the described insulation top layer of going up the insulation finished surface; And
Be arranged in the electrode under the described top layer.
26. system as claimed in claim 25, at least one in wherein said one or more conducting elements also comprises:
Housing;
Ball, it is movably disposed within the described housing with the direction perpendicular to described finished surface, and is suitable in process being arranged in described substrate on the described finished surface with respect to described electrode bias;
Contact member, it is arranged in the described housing and is suitable for keeping contacting with described ball; And
Be coupled to the conductive adapter of described contact member.
27. system as claimed in claim 26, wherein said housing and adapter also comprise:
Be suitable for making electrolyte to flow through passage with the described finished surface that contacts described first spacer assembly.
28. system as claimed in claim 26 also comprises:
Be coupled to the conductive protection of the outer surface of described housing.
29. system as claimed in claim 28, wherein said conductive protection comprises at least a in graphite, conducting polymer, noble metal or the copper.
30. system as claimed in claim 24 also comprises:
Insulation board, it has the upper surface that supports the described first processing spacer assembly; And
The conduction contact plate, it is arranged in facing to described upper surface and is formed in recessed in the described insulation board.
31. system as claimed in claim 24, the wherein said first electrochemistry machine table also comprises:
The platen assembly, it has the first processing spacer assembly disposed thereon; And
Be defined in the high pressure chest in the described platen assembly.
32. system as claimed in claim 31 also comprises:
Coupling described high pressure chest in fluid ground is at least one passage of the described finished surface of the described first processing spacer assembly.
33. system as claimed in claim 32 also comprises:
Be coupled at least one fluid source of described high pressure chest, described fluid source is suitable for optionally providing the described finished surface of cleaning and the extremely described first processing spacer assembly of Working liquids.
34. system as claimed in claim 24, the wherein said second electrochemistry machine table also comprises:
The platen assembly, it has the second processing spacer assembly disposed thereon; And
Be defined in the high pressure chest in the described platen assembly.
35. system as claimed in claim 34 also comprises:
Coupling described high pressure chest in fluid ground is at least one passage of the described finished surface of the described first processing spacer assembly.
36. system as claimed in claim 24, the wherein said second processing spacer assembly also comprises:
Comprise the conduction processing article of described finished surface, described finished surface is made by the conductive filler that disperses by adhesive.
37. system as claimed in claim 24, the wherein said second processing spacer assembly also comprises:
Comprise the conduction processing article of described finished surface, described finished surface is made by the fabric of coated with conductive material.
38. system as claimed in claim 24 also comprises the 3rd machine table at least.
39. system as claimed in claim 24, wherein said one or more conducting elements also comprise:
Comprise conductive material, be arranged at least one conductive overlayer of the fabric of conducting element in the polymeric matrix or conductive coating.
40. article that are used for process substrate comprise:
Upper strata with non-conductive finished surface;
Be coupled to the conductive layer on described upper strata;
Pass first group of hole that described upper strata forms, be used to expose described conductive layer to described finished surface; And
Pass at least one opening that described upper strata and described conductive layer form.
41. article that are used for process substrate comprise:
Upper strata with non-conductive finished surface;
Be coupled to the secondary liner on described upper strata facing to described finished surface;
With the conductive layer of described secondary gasket clip to described upper strata, described conductive layer has the terminal that is used to be coupled to power supply;
Pass first group of hole that described upper strata and secondary liner form, be used to expose described conductive layer to described finished surface; And
Pass at least one opening that described upper strata, described secondary liner and described conductive layer form.
42. processing article as claimed in claim 41, but wherein said conductive layer also comprises the electricity zone of a plurality of bias voltages independently.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48418903P | 2003-07-01 | 2003-07-01 | |
| US60/484,189 | 2003-07-01 | ||
| US10/642,128 | 2003-08-15 | ||
| US60/516,680 | 2003-11-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1835824A true CN1835824A (en) | 2006-09-20 |
Family
ID=37003258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800191249A Pending CN1835824A (en) | 2003-07-01 | 2004-07-01 | Cell, system and article for electrochemical mechanical processing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1835824A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111843077A (en) * | 2020-06-15 | 2020-10-30 | 天水师范学院 | Novel magnetic electrolysis composite polishing head |
| CN112872916A (en) * | 2020-12-28 | 2021-06-01 | 深圳市裕展精密科技有限公司 | Polishing system and polishing method |
| CN113134789A (en) * | 2020-01-17 | 2021-07-20 | 台湾积体电路制造股份有限公司 | Chemical mechanical polishing system, carrier assembly therefor and cleaning method therefor |
-
2004
- 2004-07-01 CN CNA2004800191249A patent/CN1835824A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113134789A (en) * | 2020-01-17 | 2021-07-20 | 台湾积体电路制造股份有限公司 | Chemical mechanical polishing system, carrier assembly therefor and cleaning method therefor |
| US11890718B2 (en) | 2020-01-17 | 2024-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Removable tray assembly for CMP systems |
| CN111843077A (en) * | 2020-06-15 | 2020-10-30 | 天水师范学院 | Novel magnetic electrolysis composite polishing head |
| CN112872916A (en) * | 2020-12-28 | 2021-06-01 | 深圳市裕展精密科技有限公司 | Polishing system and polishing method |
| CN112872916B (en) * | 2020-12-28 | 2023-03-10 | 富联裕展科技(深圳)有限公司 | Polishing system and polishing method |
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