CN1821453A - 半绝缘性GaAs晶片及其制造方法 - Google Patents
半绝缘性GaAs晶片及其制造方法 Download PDFInfo
- Publication number
- CN1821453A CN1821453A CN 200610002268 CN200610002268A CN1821453A CN 1821453 A CN1821453 A CN 1821453A CN 200610002268 CN200610002268 CN 200610002268 CN 200610002268 A CN200610002268 A CN 200610002268A CN 1821453 A CN1821453 A CN 1821453A
- Authority
- CN
- China
- Prior art keywords
- wafer
- gaas
- residual stress
- crystallization
- semiconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 106
- 238000002425 crystallisation Methods 0.000 claims description 56
- 230000008025 crystallization Effects 0.000 claims description 56
- 238000000137 annealing Methods 0.000 claims description 30
- 235000012431 wafers Nutrition 0.000 description 106
- 230000035882 stress Effects 0.000 description 60
- 238000010438 heat treatment Methods 0.000 description 19
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 16
- 238000002474 experimental method Methods 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 206010070834 Sensitisation Diseases 0.000 description 9
- 230000008313 sensitization Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000005482 strain hardening Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003974 emollient agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005022843 | 2005-01-31 | ||
JP2005022843 | 2005-01-31 | ||
JP2005353624 | 2005-12-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1821453A true CN1821453A (zh) | 2006-08-23 |
CN100396828C CN100396828C (zh) | 2008-06-25 |
Family
ID=36923020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100022684A Expired - Fee Related CN100396828C (zh) | 2005-01-31 | 2006-01-27 | 半绝缘性GaAs晶片及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100396828C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112420511A (zh) * | 2020-11-23 | 2021-02-26 | 陕西科技大学 | 一种GaAs衬底的退火处理方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103698182B (zh) * | 2013-12-20 | 2017-02-08 | 华南理工大学 | 一种小粒径光弹颗粒材料及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0699233B2 (ja) * | 1985-11-15 | 1994-12-07 | 住友電気工業株式会社 | 単結晶の製造方法 |
JPS62143898A (ja) * | 1985-12-16 | 1987-06-27 | Hitachi Cable Ltd | 3−5族化合物半導体単結晶の製造方法 |
JPS6452697A (en) * | 1987-08-25 | 1989-02-28 | Sumitomo Electric Industries | Production of group iii-v compound semiconductor single crystal |
JPH09199508A (ja) * | 1995-11-14 | 1997-07-31 | Japan Energy Corp | GaAs基板の熱処理方法及び熱処理用基板ホルダ |
US6572700B2 (en) * | 1997-12-26 | 2003-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
-
2006
- 2006-01-27 CN CNB2006100022684A patent/CN100396828C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112420511A (zh) * | 2020-11-23 | 2021-02-26 | 陕西科技大学 | 一种GaAs衬底的退火处理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100396828C (zh) | 2008-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN206204482U (zh) | 一种基于VGF法的减少InP晶体孪晶的装置 | |
EP0140509B1 (en) | An lec method and apparatus for growing single crystal | |
KR20150007962A (ko) | 실리콘 단결정 및 그 제조 방법 | |
CN101074488A (zh) | 用于制造单晶或多晶材料、尤其是多晶硅的装置和方法 | |
CN105247115B (zh) | 单晶硅制造方法 | |
CN100344801C (zh) | 硅片和单晶硅锭 | |
CN103282555A (zh) | 硅单晶制造方法、硅单晶和晶片 | |
CN101445954A (zh) | 一种控制直拉硅单晶生长过程中晶体和熔体界面处的温度梯度及热历史的方法 | |
CN106757357A (zh) | 一种高纯半绝缘碳化硅衬底的制备方法 | |
KR20140146069A (ko) | 다결정 실리콘 로드 | |
CN101040068A (zh) | 单结晶制造装置 | |
KR101048831B1 (ko) | 단결정 제조용 흑연 히터 및 단결정 제조장치와 단결정 제조방법 | |
CN1932085A (zh) | 制造硅单晶的方法 | |
CN109477240B (zh) | 单晶硅板状体及其制造方法 | |
CN1637175A (zh) | 具有均匀空位缺陷的单晶硅锭和晶片及其制备方法和设备 | |
CN1821453A (zh) | 半绝缘性GaAs晶片及其制造方法 | |
CN101037794A (zh) | 用于制造高质量硅单晶锭的方法以及由其制得的硅单晶片 | |
CN110730831A (zh) | 单晶硅的制造方法、外延硅晶片的制造方法、单晶硅及外延硅晶片 | |
CN1047413C (zh) | 单晶硅锭及其制造方法 | |
WO2004092456A1 (ja) | 単結晶の製造方法 | |
JP6107308B2 (ja) | シリコン単結晶製造方法 | |
JPH09221380A (ja) | チョクラルスキー法による結晶製造装置、結晶製造方法、およびこの方法から製造される結晶 | |
CN1995486B (zh) | 生产单晶硅的方法 | |
CN1782143A (zh) | 硅单晶的生长方法、生长装置及由其制造的硅片 | |
CN117642530A (zh) | 用于确定生产外延用衬底的柴可拉斯基生长条件的适合性的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI METALS, LTD. Free format text: FORMER OWNER: HITACHI CABLE CO., LTD. Effective date: 20141222 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20141222 Address after: Tokyo, Japan, Japan Patentee after: Hitachi Metals Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Hitachi Cable Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SCIOCS COMPANY LIMITED Free format text: FORMER OWNER: HITACHI METALS, LTD. Effective date: 20150813 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150813 Address after: Ibaraki Patentee after: Hitachi Cable Address before: Tokyo, Japan, Japan Patentee before: Hitachi Metals Co., Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160310 Address after: Tokyo, Japan, Japan Patentee after: Sumitomo Chemical Co., Ltd. Address before: Ibaraki Patentee before: Hitachi Cable |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080625 Termination date: 20180127 |