CN1820412B - 吸收式微波单刀单掷开关 - Google Patents
吸收式微波单刀单掷开关 Download PDFInfo
- Publication number
- CN1820412B CN1820412B CN200480019549XA CN200480019549A CN1820412B CN 1820412 B CN1820412 B CN 1820412B CN 200480019549X A CN200480019549X A CN 200480019549XA CN 200480019549 A CN200480019549 A CN 200480019549A CN 1820412 B CN1820412 B CN 1820412B
- Authority
- CN
- China
- Prior art keywords
- differential amplifier
- circuit
- coupled
- switching circuit
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002955 isolation Methods 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45466—Indexing scheme relating to differential amplifiers the CSC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45638—Indexing scheme relating to differential amplifiers the LC comprising one or more coils
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/614,495 US6987419B2 (en) | 2003-07-07 | 2003-07-07 | Absorptive microwave single pole single throw switch |
US10/614,495 | 2003-07-07 | ||
PCT/US2004/020334 WO2005011110A1 (en) | 2003-07-07 | 2004-06-23 | Absorptive microwave single pole single throw switch |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1820412A CN1820412A (zh) | 2006-08-16 |
CN1820412B true CN1820412B (zh) | 2010-04-28 |
Family
ID=33564381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480019549XA Expired - Fee Related CN1820412B (zh) | 2003-07-07 | 2004-06-23 | 吸收式微波单刀单掷开关 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6987419B2 (zh) |
EP (1) | EP1652296B1 (zh) |
JP (1) | JP2007527650A (zh) |
KR (1) | KR101105491B1 (zh) |
CN (1) | CN1820412B (zh) |
DE (1) | DE602004024543D1 (zh) |
WO (1) | WO2005011110A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547993B2 (en) * | 2003-07-16 | 2009-06-16 | Autoliv Asp, Inc. | Radiofrequency double pole single throw switch |
WO2008127752A2 (en) | 2007-01-25 | 2008-10-23 | Magna Electronics | Radar sensing system for vehicle |
US20090028216A1 (en) * | 2007-07-26 | 2009-01-29 | M/A-Com, Inc. | Method and apparatus for generating a radio frequency pulse |
US8531209B2 (en) * | 2009-01-16 | 2013-09-10 | Tektronix, Inc. | Multifunction word recognizer element |
US8503593B2 (en) * | 2010-06-23 | 2013-08-06 | Raytheon Company | Waveform generator in a multi-chip system |
KR101440000B1 (ko) | 2012-08-29 | 2014-09-12 | 한국과학기술원 | 다기능 spst 펄스변조 스위치 회로 및 이의 구동 방법 |
CN112838852A (zh) * | 2020-12-31 | 2021-05-25 | 重庆百瑞互联电子技术有限公司 | 一种具有高隔离度低***损耗的全差分单刀单掷开关 |
US11916541B2 (en) | 2021-06-09 | 2024-02-27 | Qorvo Us, Inc. | Dynamic band steering filter bank module with passband allocations |
US12015430B2 (en) * | 2021-06-09 | 2024-06-18 | Qorvo Us, Inc. | Dynamic band steering filter bank module |
CN114497928B (zh) * | 2022-04-18 | 2022-06-28 | 合肥芯谷微电子有限公司 | 一种毫米波单刀单掷开关 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58181310A (ja) * | 1982-04-15 | 1983-10-24 | Mitsubishi Electric Corp | 電圧利得制御増幅装置 |
JPH04150310A (ja) * | 1990-10-11 | 1992-05-22 | Matsushita Electric Ind Co Ltd | アナログスイッチ回路 |
JP3922773B2 (ja) * | 1997-11-27 | 2007-05-30 | 三菱電機株式会社 | 電力増幅器 |
US6393260B1 (en) * | 1998-04-17 | 2002-05-21 | Nokia Mobile Phones Limited | Method for attenuating spurious signals and receiver |
US6073002A (en) * | 1998-05-04 | 2000-06-06 | Motorola | Mixer circuit and communication device using the same |
US6157257A (en) | 1999-06-30 | 2000-12-05 | Conexant Systems, Inc. | Low power folding amplifier |
WO2002045253A1 (fr) | 2000-12-01 | 2002-06-06 | Mitsubishi Denki Kabushiki Kaisha | Amplificateur haute fréquence |
JP2002223126A (ja) | 2001-01-29 | 2002-08-09 | Fujitsu Ltd | 周波数逓倍装置 |
US6518842B1 (en) | 2002-06-07 | 2003-02-11 | Analog Devices, Inc. | Bipolar rail-to-rail input stage with selectable transition threshold |
-
2003
- 2003-07-07 US US10/614,495 patent/US6987419B2/en not_active Expired - Lifetime
-
2004
- 2004-06-23 EP EP04777044A patent/EP1652296B1/en not_active Expired - Fee Related
- 2004-06-23 WO PCT/US2004/020334 patent/WO2005011110A1/en active Application Filing
- 2004-06-23 CN CN200480019549XA patent/CN1820412B/zh not_active Expired - Fee Related
- 2004-06-23 KR KR1020067000319A patent/KR101105491B1/ko active IP Right Grant
- 2004-06-23 JP JP2006518682A patent/JP2007527650A/ja active Pending
- 2004-06-23 DE DE602004024543T patent/DE602004024543D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1652296A1 (en) | 2006-05-03 |
US6987419B2 (en) | 2006-01-17 |
KR20060026959A (ko) | 2006-03-24 |
EP1652296B1 (en) | 2009-12-09 |
CN1820412A (zh) | 2006-08-16 |
JP2007527650A (ja) | 2007-09-27 |
US20050007196A1 (en) | 2005-01-13 |
DE602004024543D1 (de) | 2010-01-21 |
WO2005011110A1 (en) | 2005-02-03 |
KR101105491B1 (ko) | 2012-01-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3457577B1 (en) | Method to build asymmetrical transmit/receive switch with 90 degrees impedance transformation section | |
CN1820412B (zh) | 吸收式微波单刀单掷开关 | |
CN104883143B (zh) | 功率放大模块 | |
US11159134B2 (en) | Multiple-stage power amplifiers and amplifier arrays configured to operate using the same output bias voltage | |
SE1750265A1 (en) | High frequency signal attenuators | |
Boles et al. | Monolithic high power 300 watt, S-band, HMIC PIN diode limiter | |
Min et al. | SiGe T/R modules for Ka-band phased arrays | |
Yu et al. | A 60GHz digitally controlled RF-beamforming receiver front-end in 65nm CMOS | |
Datta et al. | A transceiver front-end for ultra-wide-band applications | |
CN116886052A (zh) | 低噪声放大器以及射频前端模组 | |
CN104702307A (zh) | 一种微型化收发信机组件 | |
Boyuan et al. | A transceiver frequency conversion module based on 3D micropackaging technology | |
CN112491437A (zh) | 一种多天线模式的射频前端电路和集成电路模块 | |
CN210724720U (zh) | 一种8选1开关 | |
KR102304322B1 (ko) | 병렬 공진 구조를 이용한 낮은 삽입손실을 가지는 밀리미터파 대역 스위치 구조 | |
CN220985670U (zh) | 一种射频收发电路 | |
CN210724725U (zh) | 一种8选2开关 | |
Jeong et al. | Four‐channel GaAs multifunction chips with bottom RF interface for Ka‐band SATCOM antennas | |
CN108337010B (zh) | 一种基于载波加强技术的射频接收器 | |
Nguyen et al. | X-band TR module for radar and wireless communication systems | |
KR100851896B1 (ko) | 마이크로스트립라인과 슬롯라인의 결합에 의한 고주파스위치 및 이를 이용한 스위치 모듈 | |
Jindal et al. | Design and Development of ultra wideband Transceiver's functional blocks MMICs Using GaN Technology | |
Han et al. | A 28 GHz four channel T/R chipset in 65 nm CMOS technology | |
CN116470933A (zh) | 基于单刀三掷开关的射频微波电路及其工作方法 | |
Chen et al. | A C-band transceiver multi-function chip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090320 Address after: Utah, USA Applicant after: Autoliv ASP Inc. Address before: Massachusetts, USA Applicant before: Pine Valley Investments, Inc. |
|
ASS | Succession or assignment of patent right |
Owner name: AUTOLIV ASPCO., LTD. Free format text: FORMER OWNER: M/ A-COM CO.,LTD. Effective date: 20090320 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180621 Address after: michigan Patentee after: United States company Address before: Utah, USA Patentee before: Autoliv ASP Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100428 Termination date: 20210623 |
|
CF01 | Termination of patent right due to non-payment of annual fee |