CN1819240A - Cmos图像传感器及其制造方法 - Google Patents
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Abstract
一种CMOS图像传感器包括:包括蚀刻停止层的钝化层,该钝化层具有形成至由该蚀刻停止层确定的深度的滤色器阵列图案,该滤色器阵列图案包括分开限定的滤色器区;以及滤色器阵列,其包括依据颜色分别滤光的多个滤色器,依据滤色器阵列图案形成该滤色器,每个滤色器由仅填充对应滤色器区的材料形成。
Description
相关申请的交叉参考
本申请要求2004年12月30日提出的韩国专利申请第10-2004-0116477号的权益,其通过引用结合在本申请中。
技术领域
本发明涉及一种图像传感器,更具体地,涉及一种互补金属-氧化物-半导体(CMOS)图像传感器,其中滤色器材料填充氮化物膜的蚀刻部分。
背景技术
图像传感器是用于将光学图像转换为电信号的半导体器件,并且可以是电荷耦合器件或互补金属-氧化物-硅(CMOS)图像传感器。在电荷耦合器件中,电荷被存储在MOS电容器阵列并从中传递。在CMOS图像传感器中,有对应于像素数量的多个MOS晶体管以及顺序输出MOS晶体管的电信号的***电路。
CMOS图像传感器使用CMOS技术以减小特征尺寸、功率消耗和制造成本,并且适用于诸如数字相机、蜂窝电话、个人数字助理、笔记本电脑、条码阅读器和玩具的产品。CMOS图像传感器主要由信号处理芯片构成,包括光电二极管阵列,提供有放大器,模数转换器,内部电压调节器和数字逻辑电路。
为了增强CMOS图像传感器的光敏感性,可提高CMOS图像传感器的填充因数。相对于器件本身的面积,光电二极管面积被增加。然而,填充因数的增加由于每个光电二极管的关联逻辑和信号处理电路的存在而受到限制。增强的光敏感性亦可通过聚焦由例如提供给每个光电二极管的微透镜偏转的入射光以将该入射光集中到光电二极管中且远离没有光电二极管表面的相邻区域。
因此,聚焦的光由此被引导通过滤色器阵列,其包括依据颜色在同一层设置或图案化的滤色器阵列。在示例性实施例中,有三种颜色,例如红、绿和蓝或青(cyan)、洋红(magenta)和黄。滤色器阵列层的每个滤色器是有色阻止剂(colored resist)层的单独构造,其依据滤色器阵列的图案形成。
图1-6说明常规的CMOS图像传感器。
参考图1,CMOS图像传感器包括单元像素区和垫(pad)部分的外周区。通过选择性地将硼注入硅基片以形成p阱50和n阱并施加沟道60器件分离过程,形成场氧化物膜。然后,依据所需阈电压形成预定厚度的栅氧化物膜。多晶硅膜40和硅化钨膜80被形成为栅氧化物膜,以通过选择性蚀刻形成器件的栅电极。通过选择性离子注入在硅基片上形成n离子注入区20和p离子注入区10,以形成光电二极管。为了在阱区形成具有轻掺杂漏结构的晶体管的源和漏,源/漏离子被轻注入,通过低压化学气相沉积来沉积原硅酸四乙酯(TEOS)氧化物膜或氮化硅(SiN),并且所得到的结构的整个表面被蚀刻以在栅电极的侧壁形成间隔物70。此后,源/漏离子被重注入,以形成N型结区30和P型结区。
参考图2,作为金属前电介质层(pre-metal dielectric layer)90的TEOS氧化物膜通过低压化学气相沉积形成至大约1000的厚度,并且硼磷硅酸盐玻璃通过常压化学气相沉积而沉积在TEOS氧化物膜上,然后被加热以使能流动状态。选择性地蚀刻预金属电介质层90以形成暴露预定结区和栅电极的接触孔100。作为胶合层的钛层110、用于接线的铝层120和非反射性氮化钛(TiN)层130的每个被依序沉积和选择性蚀刻以形成第一金属线。通过等离子体蚀刻形成接触孔100。
参考图3,TEOS氧化物膜150和玻璃上旋涂氧化物膜(spin-on glassoxide film)140通过等离子体增强化学气相沉积而形成,被热处理和平坦化。然后,通过等离子体增强化学气相沉积形成作为第一金属间电介质层(inter-metal dielectric layer)160的氧化物膜。
参考图4,选择性地蚀刻第一金属间电介质层160以形成一通孔,并且在再次堆叠作为胶合层的钛、用于接线的铝和非反射性氮化钛之后通过等离子体蚀刻形成第二金属线。如在第一金属间电介质层90的构造中,形成TEOS氧化物膜150、玻璃上旋涂氧化物膜140和氧化物膜160以形成第二金属间电介质层,并且通过重复这些步骤可形成任何所需数量的另外的金属接线层。
参考图5,在形成最上的金属接线层之后,作为器件保护膜的氧化物膜通过等离子体增强化学气相沉积形成至大约8000的厚度。通过蚀刻器件保护氧化物膜和氮化钛膜来敞开用作电极端子的垫区域,以在***暴露垫部分金属。
参考图6,滤色器阵列170形成于所得到的结构上。在滤色器阵列170上形成提供用于容纳微透镜190的平坦表面的平坦化层180。
然而,上述方法需要单独的平坦化步骤,用于形成平坦化层180,这使制造变得复杂且相应地增加了成本。同样,当这种CMOS图像传感器工作在相对低亮度的时表现出差的性能。再者,难以控制形成滤色器阵列的阻止剂层的厚度。
发明内容
因此,本发明涉及一种CMOS图像传感器及制造这种CMOS图像传感器的方法,其基本上消除了因现有技术的限制和缺点而导致的一个或多个问题。
本发明提供了一种CMOS图像传感器及制造这种CMOS图像传感器的方法,其使能通过用滤色器材料填充氮化物膜的蚀刻部分来改善工作特性。
本发明提供了一种CMOS图像传感器及制造这种CMOS图像传感器的方法,其通过消除平坦化层而简化了制造且相应地降低了成本。
本发明提供了一种CMOS图像传感器及制造这种CMOS图像传感器的方法,其使能通过控制蚀刻停止层的垂直沉积或深度来较精确地控制阻止剂层的厚度。
本发明的其它优点、目的和特征一部分将在下面的说明书中阐述,一部分对于本领域技术人员而言,依据对以下的研究将变得清楚。本发明可通过在书面描述及其权利要求和附图中具体指出的结构来实现和获得。
如这里体现的和广泛说明的,提出了一种CMOS图像传感器,包括:钝化层,该钝化层包括蚀刻停止层,该钝化层具有形成至由该蚀刻停止层确定的一深度的滤色器阵列图案,该滤色器阵列图案包括分开限定的滤色器区;以及滤色器阵列,其包括用于依据颜色分别滤光的多个滤色器,依据滤色器阵列图案形成所述滤色器,每个滤色器由仅填充对应滤色器区的材料形成。
依据本发明的另一个方面,提供了一种制造CMOS图像传感器的方法,该方法包括形成包括蚀刻停止层的钝化层;依据滤色器阵列图案,蚀刻该钝化层至由该蚀刻停止层确定的深度,该滤色器阵列图案包括分开限定的滤色器区;以用于形成多种颜色中的一种颜色的材料来填充分开限定的滤色器区,所述多种颜色形成滤色器阵列;以及去除填充对应于滤色器阵列的所述多种颜色中的其它颜色的分开限定的滤色器区的材料。
应当理解的是,本发明的前面一般性描述和下面的详细描述是示例性和说明性的,并且旨在提供对所要求的本发明的更详尽的说明。
附图说明
被包括以提供对本发明的进一步理解的附图,说明了本发明的实施例且与说明书一起用于解释本发明的原理。在附图中:
图1-6是常规CMOS图像传感器的横截面图;并且
图7-11是依据本发明的CMOS图像传感器的视图。
具体实施方式
现在将详细参考本发明的示例性实施例,在附图中说明其实例。在任何可能的情况下,在整个附图中相同的参考标记被用于标示相同或相似部分。
参考图7,钝化层210形成在氧化物/氮化物或替代材料的绝缘层200上,绝缘层200覆盖CMOS图像传感器的下部结构。钝化层210中包括蚀刻停止层。该蚀刻停止层位于由在后面说明的填充步骤中使用的滤色器材料的量和形成滤色器阵列的所需厚度确定的深度。所述滤色器阵列可包括多个滤色器,用于依据颜色分别滤光。
参考图8,依据用于形成滤色器阵列的图案通过光蚀刻过程来选择性地蚀刻钝化层210。在此情况下,仅两个区通过蚀刻过程来限定,这是因为滤色器阵列的仅两种必要颜色被示出,但是该滤色器阵列可包括三种或更多种颜色,例如,红、绿和蓝或青、洋红和黄。
参考图9,用于形成滤色器阵列的颜色之一的诸如有色阻止剂的材料220被厚沉积在钝化层的整个表面上,包括经蚀刻的滤色器区,从而填充所述区。所得到的沉积是如此平坦化的:例如通过化学-机械抛光或回蚀过程、将钝化层的上表面作为终点(end point)并且仅剩下经蚀刻的滤色器区中的材料。
参考图10,填充其它颜色的滤色器区的材料被去除,以仅剩下所需颜色的材料,即第一滤色器230。换言之,用于非所需颜色的材料被去除。可通过使用覆盖所需颜色的掩模的曝光和显影过程来实现去除。
参考图11,参照图9和10描述的步骤针对滤色器阵列的每种颜色而被重复。例如,用于形成滤色器阵列的另外颜色的有色阻止剂被厚沉积在钝化层的整个表面,包括剩下的(未填充的)滤色器区,从而填充所述区并且形成第二滤色器240。应当理解,第一和第二滤色器230和240的每个可以是整个阵列的一个滤色器的单独元件,所述整个阵列典型地包括三种不同颜色,例如红、绿和蓝。
因此,不是通过需要专门设备和处理、包括在实施滤色器形成过程之前形成平坦化层的、旋涂各种有色阻止剂并对有色阻止剂的每个单独涂层进行曝光和显影来形成滤色器,本发明可省去使用滤色器材料填充过程的平坦化过程,这简化了制造,同时通过减小因平坦化层存在而引起的厚度增加所导致的信号损失的量,改善了CMOS图像传感器在低亮度情况下的工作特性。再者,通过控制蚀刻停止层的垂直沉积,尤其是在钝化层内其上表面出现的深度,本发明可使能对阻止剂所需厚度的较为精确的控制。
对本领域技术人员显而易见的是,在不脱离本发明的宗旨或范围的情况下,可以在本发明中做出各种变型。因此,旨在使本发明覆盖落入所附权利要求及其等效物的范围内的这样的变型。
Claims (10)
1、一种CMOS图像传感器,包括:
钝化层,其包括蚀刻停止层,所述钝化层具有形成到依据该蚀刻停止层的深度的滤色器阵列图案,该滤色器阵列图案包括分开限定的滤色器区;和
滤色器阵列,其包括用于依据颜色来分别滤光的多个滤色器,依据所述滤色器阵列图案形成所述滤色器,每个滤色器由仅填充对应滤色器区的材料形成。
2、依据权利要求1的CMOS图像传感器,其中每个滤色器的材料是所述多个滤色器的颜色之一的有色阻止剂。
3、依据权利要求1的CMOS图像传感器,另外包括覆盖CMOS图像传感器下部结构的绝缘层,所述钝化层形成在所述绝缘层上。
4、依据权利要求1的CMOS图像传感器,其中所述滤色器阵列包括三个分开的滤色器。
5、依据权利要求4的CMOS图像传感器,其中所述多个滤色器的颜色是红、绿、蓝。
6、依据权利要求4的CMOS图像传感器,其中所述多个滤色器的颜色是青、洋红、黄。
7、一种制造CMOS图像传感器的方法,包括:
形成包括蚀刻停止层的钝化层;
依据包括分开限定的滤色器区的滤色器阵列图案,蚀刻所述钝化层至依据所述蚀刻停止层的深度;
以用于形成多种颜色中的第一颜色的材料来填充分开限定的滤色器区,所述多种颜色形成滤色器阵列;以及
去除填充对应于滤色器阵列的多种颜色中的另外颜色的分开限定的滤色器区的材料。
8、依据权利要求7的方法,另外包括:
针对滤色器阵列的多种颜色中的每种另外颜色来重复所述填充步骤和所述去除步骤。
9、依据权利要求7的方法,其中通过使用掩模的曝光和显影过程来实现所述去除步骤,所述掩模覆盖所述填充的颜色。
10、依据权利要求7的方法,其中所述蚀刻的深度依据滤色器阵列的所需厚度。
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