CN1808823A - Current limiting circuit with temperature compensation and method - Google Patents
Current limiting circuit with temperature compensation and method Download PDFInfo
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- CN1808823A CN1808823A CN 200510112361 CN200510112361A CN1808823A CN 1808823 A CN1808823 A CN 1808823A CN 200510112361 CN200510112361 CN 200510112361 CN 200510112361 A CN200510112361 A CN 200510112361A CN 1808823 A CN1808823 A CN 1808823A
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Abstract
This invention relates to one limit circuit and its method with temperature compensation function, wherein, the circuit comprises the following parts: base current circuit to generate base current; temperature compensation circuit to generate current with positive parameters to compensate base current and use the current with negative temperature parameters as current comparer base; current inductance circuit to test the current through the limit current and send the result to the current comparer; current comparer to compare the temperature compensation current with current inductance circuit to get the comparison to control the required flow element or switch; buffer to output and enlarge the current output.
Description
Technical field
The invention provides a kind of current-limiting circuit and method with temperature-compensating.
Background technology
Because the restriction of integrated circuit package cooling,, during especially powerful integrated circuit, must consider Power Limitation to chip at designing integrated circuit.The power of chip usually mainly need be flow through the element decision of big electric current by certain, when the electric current on this element increases, and the power of chip increase, temperature also increases.Excessive for preventing power, temperature raises and causes chip to be burnt, and usually needs current limiting mechanism to limit the maximum current that flows through on this element.
In the present integrated circuit, the cut-off current of current-limiting circuit is normally fixing, and do not change with variation of temperature, if the ambient temperature of chip operation is higher, and flow through electric current on the required current limiting element also more greatly but when not reaching the current-limiting points of current-limiting circuit, at this moment power also may surpass the maximum power that chip allows, and the heat of generation surpasses the limit of package cooling and chip is burnt out.
The Chinese patent publication number is the disclosed a kind of circuit of realizing continuous adjusting of Switching Power Supply current-limiting points and temperature protection of CN01132110.5, comprises a temperature sensing circuit and a current-limiting circuit.When temperature sensing circuit detects the Switching Power Supply temperature inside above certain value, send the signal that needs to change the current-limiting circuit current-limiting points and give current-limiting circuit, to change the current-limiting points of current-limiting circuit, reach the heat balance of Switching Power Supply temperature inside and ambient temperature.
Its limitation is, when variations in temperature must surpass certain value, just changes the current-limiting points of current-limiting circuit.And can not change the current-limiting points of current-limiting circuit less than setting the time when variations in temperature.Therefore, in this process, the reliability of system might can not get corresponding assurance because of the judgement error that some cause specific causes.
Summary of the invention
The present invention aims to provide a kind of current-limiting circuit and method with temperature-compensating, and the current-limiting points itself that makes current-limiting circuit is real-time change along with variation of temperature, realizes adjustablely continuously, guarantees the safety of chip under the different temperatures situation, improves chip reliability.
A kind of current-limiting circuit provided by the present invention with temperature-compensating, be used for needing the current element of current limliting, it is characterized in that: comprise reference current circuit 1, temperature-compensation circuit 2, current adder 3, current-sensing circuit 4, current comparator 5 and buffer 6, wherein: reference current circuit 1 is used to produce reference current; Temperature-compensation circuit 2, be used to produce electric current, reference current is compensated in described current adder 3, electric current that will be after overcompensation with negative temperature coefficient with positive temperature coefficient, output to the positive input terminal of current comparator 5, as the benchmark of described current comparator 5; Current-sensing circuit 4 is used for the electric current that flows through on the current element that needs current limliting is detected, and the result is outputed to the negative input end of described current comparator; Current comparator 5 is used for and will compares with the electric current that described current-sensing circuit 4 obtains from the electric current after 2 compensation of described temperature-compensation circuit, and the result that will compare exports described buffer to, controls to require the element of current limliting to open or close; Buffer 6 is used for the output of described current comparator 5 is amplified, and strengthens the driving force of these current comparator 5 outputs.
In the above-mentioned current-limiting circuit with temperature-compensating, reference current circuit 1 comprises PMOS transistor 11,12 that constitutes current mirror and the zero-temperature coefficient electrical current source 13 that is attached thereto.
In above-mentioned current-limiting circuit with temperature-compensating, temperature-compensation circuit 2 comprises the positive temperature coefficient current source 201 that links to each other successively, start-up circuit 202 and the start-up control circuit 203 that is used to start these current source 201 circuit, and the electric current on the PMOS transistor 12 is greater than the electric current on the described positive temperature coefficient current source 201, so that obtain the electric current I of negative temperature coefficient
Bias
In above-mentioned current-limiting circuit with temperature-compensating, positive temperature coefficient current source 201 comprises the PMOS transistor 21,22 that constitutes current mirror, constitutes the nmos pass transistor 23,24 of current mirror, constitute the nmos pass transistor 210 of current mirrors and resistance 25 with this nmos pass transistor 23; Described start-up circuit 202 comprises PMOS transistor 27,28, the nmos pass transistor 29 that constitutes current mirror; Described start-up control circuit is a PMOS transistor 26, is used for moving the current potential of PMOS transistor 27,28 grids to VDD after having electric current to produce on the PMOS transistor 21,22, turns off described start-up circuit; Wherein: the drain terminal of PMOS transistor 28 links to each other with the drain terminal of PMOS transistor 21 with nmos pass transistor 23; The drain terminal of PMOS transistor 26 is connected on the grid of PMOS transistor 27,28.
In the above-mentioned current-limiting circuit with temperature-compensating, current comparator 5 comprises: the difference comparison circuit that is made of PMOS transistor 51,52,55, resistance 53,54; The current mirror that constitutes by nmos pass transistor 58,59; And the current mirror that constitutes by PMOS transistor 57,56,55, PMOS transistor 55 provides tail current for described difference comparison circuit.
In above-mentioned current-limiting circuit with temperature-compensating, current-sensing circuit is made up of nmos pass transistor 41,43 and resistance 42, and the drain terminal of the PMOS transistor 56 in the drain terminal of nmos pass transistor 43 and the described current comparator 5 and the grid of PMOS transistor 51 link to each other.
In the above-mentioned current-limiting circuit with temperature-compensating, current comparator 5 comprises: by PMOS transistor 51,52,55, nmos pass transistor 53 ', the 54 ' difference comparison circuit that constitutes; The current mirror that constitutes by nmos pass transistor 58,59,56; And the current mirror that constitutes by PMOS transistor 57,55, wherein: nmos pass transistor 53 ' drain terminal respectively with the drain terminal of its grid, PMOS transistor 51 and nmos pass transistor 54 ' grid link to each other; Nmos pass transistor 54 ' drain terminal and the drain terminal of PMOS the transistor 52 and input of buffer 6 link to each other.
The present invention also provides a kind of current-limiting method with temperature-compensating, is used for comprising the following steps: at first needing the current element of current limliting the electric current that produces reference current and have positive temperature coefficient; Secondly, the electric current that makes reference current and have positive temperature coefficient produces the electric current with negative temperature coefficient after compensating by current adder; Then, this electric current with negative temperature coefficient as current ratio benchmark, is detected the electric current that flows through on the current element that needs current limliting simultaneously, produce the electric current that induction obtains; At last, in the future the electric current behind the self-temperature compensating compares with the electric current that induction by current obtains, and after the result that will compare amplifies, and controls to require the element of current limliting to open or close.
Adopted above-mentioned technical solution, the present invention need not extra temperature sensing circuit, current-limiting circuit itself is through temperature-compensating, the current-limiting points of the current-limiting circuit of process temperature-compensating itself is real-time change along with variation of temperature, not only realized truly adjustable continuously, and owing to there is not extra temperature sensing circuit, entire circuit realizes in same integrated circuit, has reduced cost.In addition, the present invention has improved the reliability of system to the reaction speed sensitivity of variations in temperature.
Description of drawings
Fig. 1 is the present invention and does not have the current-limiting points of temperature-compensating current-limiting circuit to vary with temperature curve ratio than schematic diagram;
Fig. 2 is the theory diagram that the present invention has the current-limiting circuit of temperature-compensating;
Fig. 3 is the schematic diagram of temperature-compensation circuit and reference current circuit among the present invention;
Fig. 4 is the schematic diagram of temperature-compensation circuit of the present invention and reference current circuit;
Fig. 5 is the schematic diagram of one of current-limiting circuit embodiment of the present invention;
Fig. 6 is two the schematic diagram of current-limiting circuit embodiment of the present invention.
Embodiment
The basic thought that the present invention has the current-limiting circuit of temperature-compensating is: when the electric current that flows through on the current element of required current limliting reached the given cut-off current of current-limiting circuit, the output signal of current-limiting circuit was turn-offed required current limiting element; When temperature raise, the cut-off current of current-limiting circuit reduced; When temperature reduced, the cut-off current of current-limiting circuit raise.
Needing the element of current limliting is nmos pass transistor, PMOS transistor, NPN transistor or PNP transistor.The element of current limliting is placed in outside the same semiconductor integrated device.
A kind of current-limiting method with temperature-compensating provided by the invention is used for comprising the following steps: at first needing the current element of current limliting, the electric current that produces reference current and have positive temperature coefficient; Secondly, the electric current that makes reference current and have positive temperature coefficient produces the electric current with negative temperature coefficient after compensating by current adder; Then, this electric current with negative temperature coefficient as current ratio benchmark, is detected the electric current that flows through on the current element that needs current limliting simultaneously, produce the electric current that induction obtains; At last, in the future the electric current behind the self-temperature compensating compares with the electric current that induction by current obtains, and after the result that will compare amplifies, and controls to require the element of current limliting to open or close.
Below describe concrete working condition of the present invention with reference to the accompanying drawings.
As shown in Figure 2, the present invention has the current-limiting circuit of temperature-compensating, is used for the element 7 to the requirement current limliting, is generally nmos pass transistor, the PMOS transistor, and NPN transistor or PNP transistor carry out current limliting.Comprise reference current circuit 1, temperature-compensation circuit 2, current adder 3, current-sensing circuit 4, current comparator 5 and buffer 6, wherein:
Reference current circuit 1 is used to produce reference current;
Temperature-compensation circuit 2 is used to produce the electric current with positive temperature coefficient, and reference current is compensated in adder 3.Electric current after overcompensation has negative temperature coefficient, outputs to the positive input terminal of current comparator 5, as the benchmark of current comparator 5;
Current-sensing circuit 4 is used for the electric current that flows through on the current element 7 that needs current limliting is detected, and the result is outputed to the negative input end of current comparator 5;
Current comparator 5, the electric current that is used for behind the self-temperature compensating in the future compares with the electric current that induction by current obtains, and the result that will compare outputs to buffer 6, controls to require the element 7 of current limliting to open or close;
Buffer 6 is used for the output of current comparator 5 is amplified, and strengthens the driving force of current comparator 5 outputs.
Referring to Fig. 3, reference current circuit and temperature-compensation circuit.Reference current circuit comprises PMOS transistor current mirror 11,12 and zero-temperature coefficient electrical current source 13.
Referring to Fig. 4, temperature-compensation circuit 2 comprises the positive temperature coefficient current source 201 that links to each other successively, start-up circuit 202 and the start-up control circuit 203 that is used to start these current source 201 circuit, and the electric current on the PMOS transistor 12 is greater than the electric current on the nmos pass transistor 210 in the described positive temperature coefficient current source 201, the electric current I on the PMOS transistor 12
12Deduct the electric current I that electric current on the nmos pass transistor 210 just obtains negative temperature coefficient
Bias=I
12-I
210
Referring to Fig. 4, the concrete enforcement circuit of temperature-compensation circuit comprises: PMOS transistor 21,22 and nmos pass transistor current mirror 23,24 and resistance 25, they constitute the current source with positive temperature coefficient.
The effect of PMOS transistor 26 is, after having electric current to produce on the transistor current mirror 21,22 with positive temperature coefficient current source, moves the current potential of the grid of current mirror 27,28 to VDD, turns off start-up circuit. Nmos pass transistor 210 and 23 constitutes current mirror, and the electric current on the transistor 210 is the mirror image of electric current on the transistor 23.Electric current during design on the assurance transistor 12 is greater than the electric current on the transistor 210, because the electric current on the transistor 12 has zero-temperature coefficient, and the electric current on the transistor 210 has positive temperature coefficient, so just obtains the electric current I of negative temperature coefficient
Bias=I
12-I
210
Referring to Fig. 5, current comparator 5 comprises: constitute the difference comparison circuit by PMOS transistor 51,52,55 and resistance 53,54; The current mirror that constitutes by nmos pass transistor 58,59; And constitute current mirror by PMOS transistor 57,56,55.Nmos pass transistor 58,59 is with the reference current I after temperature compensated
BiasThe reference current that is used for the difference comparison circuit.PMOS transistor 57,56 and 55 constitutes current mirror, and PMOS transistor 55 provides tail current for this comparison circuit, and the drain terminal of PMOS transistor 56 is connected to the drain terminal of nmos pass transistor 43.One end of the drain terminal of PMOS transistor 52 and resistance 54 links to each other, and outputs to the input of buffer 6.
Nmos pass transistor 7 is elements of required current limliting, and the electric current of element 7 is flow through in current source 8 expressions.
Nmos pass transistor 41,43 and resistance 42 are current-sensing circuits, and the drain terminal of nmos pass transistor 43 links to each other with the drain terminal of PMOS transistor 56 and the grid of PMOS transistor 51.
Nmos pass transistor 41,43 has identical unit sizes with the element 7 of required current limliting.Because current source 3 has negative temperature coefficient, like this grid voltage V of transistor 51
RefHas negative temperature coefficient.
The input of buffer 6 and output are connected respectively to the output of comparator and the grid of element 7.The drain and gate of nmos pass transistor 41 links to each other with the drain and gate of element respectively.The source end of nmos pass transistor 41 links to each other with an end of resistance 42.Required current limiting element 7 that the electric current of current source 8 flows through and nmos pass transistor 41 and resistance 42 produce pressure drop V on resistance 42
CSWhen the electric current of current source 8 increases, V
CSAlso increase; Work as V
CSGreater than V
RefThe time, comparator 5 output low levels through outputing to the input of element 7 after the buffer amplification, are turn-offed element 7.
When the element of required current limliting is the PMOS transistor, referring to Fig. 6.Nmos pass transistor 53 ' drain terminal and the drain terminal of PMOS transistor 51 and transistor 53 ', 54 ' grid link to each other; Transistor 54 ' drain terminal and the drain terminal of the transistor 52 and input of buffer 6 link to each other.PMOS transistor 41, resistance 42 has identical unit sizes with element 7.The two ends of resistance 42 are connected in the source end of power supply and transistor 41 respectively; The drain and gate of transistor 41 links to each other with the drain and gate of element 7 respectively.The input of buffer 6 is linked the output of comparator 5, links to each other with the grid of element 7 through anti-phase back.
Fig. 1 has shown the present invention and has had the comparison that the current-limiting points that does not have the temperature-compensating current-limiting circuit varies with temperature curve now.Do not have in the current-limiting circuit of temperature-compensating, the current-limiting points of current-limiting circuit does not change with variation of temperature, when the electric current that flows through on the required current limiting element reached cut-off current, along with the rising of ambient temperature, the temperature of chip may surpass the maximum temperature that chip can bear and be burnt out.And the current-limiting circuit of employing temperature-compensating of the present invention because the current-limiting points of current-limiting circuit reduces with the rising of chip temperature, does not cause chip to be burnt out thereby chip temperature can not surpass its safe working temperature owing to the rising of ambient temperature.And when ambient temperature reduced, the maximum power that chip allowed also can raise.
The present invention adopts current ratio, has reduced to change difference between the different chip current-limiting points with flow-route and temperature, and consistency is guaranteed.
More than all embodiment only for the explanation the present invention usefulness, but not limitation of the present invention, person skilled in the relevant technique, under the situation that does not break away from the spirit and scope of the present invention, can also make various conversion or modification, therefore all technical schemes that are equal to also should belong within the category of the present invention, should be limited by each claim.And include within the scope of claim.
Claims (8)
1. current-limiting circuit with temperature-compensating, be used for needing the current element of current limliting, it is characterized in that: comprise reference current circuit (1), temperature-compensation circuit (2), current adder (3), current-sensing circuit (4), current comparator (5) and buffer (6), wherein:
Reference current circuit (1) is used to produce reference current;
Temperature-compensation circuit (2), be used to produce electric current with positive temperature coefficient, reference current is compensated in described current adder (3), electric current that will be after overcompensation with negative temperature coefficient, output to the positive input terminal of current comparator (5), as the benchmark of described current comparator (5);
Current-sensing circuit (4) is used for the electric current that flows through on the current element that needs current limliting is detected, and the result is outputed to the negative input end of described current comparator;
Current comparator (5), the electric current that is used for obtaining from electric current after described temperature-compensation circuit (2) compensation and described current-sensing circuit (4) compares, and the result that will compare exports described buffer to, controls to require the element of current limliting to open or close;
Buffer (6) is used for the output of described current comparator (5) is amplified, and strengthens the driving force of this current comparator (5) output.
2. the current-limiting circuit with temperature-compensating according to claim 1 is characterized in that: described reference current circuit (1) comprises PMOS transistor (11,12) that constitutes current mirror and the zero-temperature coefficient electrical current source (13) that is attached thereto.
3. the current-limiting circuit with temperature-compensating according to claim 1 and 2, it is characterized in that: described temperature-compensation circuit (2) comprises the positive temperature coefficient current source (201) that links to each other successively, start-up circuit (202) and the start-up control circuit (203) that is used to start this current source (201) circuit, and the electric current on the PMOS transistor (12) is greater than the electric current on the described positive temperature coefficient current source (201), so that obtain the electric current (I of negative temperature coefficient
Bias).
4. the current-limiting circuit with temperature-compensating according to claim 3 is characterized in that:
Described positive temperature coefficient current source (201) comprises the PMOS transistor (21,22) that constitutes current mirror, constitutes the nmos pass transistor (23,24) of current mirror, constitute the nmos pass transistor (210) of current mirror and resistance (25) with this nmos pass transistor (23);
Described start-up circuit (202) comprises PMOS transistor (27,28), the nmos pass transistor (29) that constitutes current mirror;
Described start-up control circuit is PMOS transistor (26), is used for moving the current potential of PMOS transistor (27,28) grid to VDD after having electric current to produce on the PMOS transistor (21,22), turns off described start-up circuit; Wherein:
The drain terminal of PMOS transistor (28) links to each other with the drain terminal of PMOS transistor (21) with nmos pass transistor (23);
The drain terminal of PMOS transistor (26) is connected on the grid of PMOS transistor (27,28).
5. the current-limiting circuit with temperature-compensating according to claim 1 is characterized in that:
Described current comparator (5) comprising: by the difference comparison circuit of PMOS transistor (51,52,55), resistance (53,54) formation; Current mirror by nmos pass transistor (58,59) formation; And the current mirror that constitutes by PMOS transistor (57,56,55), PMOS transistor (55) provides tail current for described difference comparison circuit.
6. the current-limiting circuit with temperature-compensating according to claim 5 is characterized in that:
Described current-sensing circuit is made up of nmos pass transistor (41,43) and resistance (42), and the drain terminal of the PMOS transistor (56) in the drain terminal of nmos pass transistor (43) and the described current comparator (5) and the grid of PMOS transistor (51) link to each other.
7. the current-limiting circuit with temperature-compensating according to claim 1 is characterized in that:
Described current comparator (5) comprising: the difference comparison circuit that is made of PMOS transistor (51,52,55), nmos pass transistor (53 ', 54 '); Current mirror by nmos pass transistor (59,58,56) formation; And the current mirror that constitutes by PMOS transistor (57,55), wherein:
The drain terminal of nmos pass transistor (53 ') links to each other with the drain terminal of its grid, PMOS transistor (51) and the grid of nmos pass transistor (54 ') respectively; The drain terminal of the drain terminal of nmos pass transistor (54 ') and PMOS transistor (52) and the input of buffer (6) link to each other.
8. the current-limiting method with temperature-compensating is used for comprising the following steps: needing the current element of current limliting
At first, the electric current that produces reference current and have positive temperature coefficient;
Secondly, the electric current that makes reference current and have positive temperature coefficient produces the electric current with negative temperature coefficient after compensating by current adder;
Then, this electric current with negative temperature coefficient as current ratio benchmark, is detected the electric current that flows through on the current element that needs current limliting simultaneously, produce the electric current that induction obtains;
At last, in the future the electric current behind the self-temperature compensating compares with the electric current that induction by current obtains, and after the result that will compare amplifies, and controls to require the element of current limliting to open or close.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101123616A CN100433492C (en) | 2005-12-29 | 2005-12-29 | Current limiting circuit with temperature compensation and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101123616A CN100433492C (en) | 2005-12-29 | 2005-12-29 | Current limiting circuit with temperature compensation and method |
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| Publication Number | Publication Date |
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| CN1808823A true CN1808823A (en) | 2006-07-26 |
| CN100433492C CN100433492C (en) | 2008-11-12 |
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| CNB2005101123616A Active CN100433492C (en) | 2005-12-29 | 2005-12-29 | Current limiting circuit with temperature compensation and method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499646B (en) * | 2008-06-10 | 2011-05-18 | 上海英联电子***有限公司 | Automatically temperature compensating average value over-current protection circuit |
| CN105207323A (en) * | 2015-11-12 | 2015-12-30 | 无锡中感微电子股份有限公司 | Charger with thermal regulation circuit |
| CN105322924A (en) * | 2014-05-29 | 2016-02-10 | 英飞凌科技股份有限公司 | Method and apparatus for compensating PVT variations |
| CN107888063A (en) * | 2018-02-11 | 2018-04-06 | 漳州科华技术有限责任公司 | A kind of output current peak factor method and device for improving inverter |
| CN110361587A (en) * | 2019-08-07 | 2019-10-22 | 珠海格力电器股份有限公司 | A kind of over-current detection circuit with temperature-compensating |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307726B1 (en) * | 1998-10-02 | 2001-10-23 | Texas Instruments Incorporated | System to control the output current with temperature through a controllable current limiting circuit |
| JP2001235490A (en) * | 2000-02-22 | 2001-08-31 | Mitsubishi Electric Corp | Overcurrent detection circuit |
| CN100486072C (en) * | 2001-10-30 | 2009-05-06 | 中兴通讯股份有限公司 | Circuit for continuous current-limiting point regulation and temperature protection of switching power source |
-
2005
- 2005-12-29 CN CNB2005101123616A patent/CN100433492C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499646B (en) * | 2008-06-10 | 2011-05-18 | 上海英联电子***有限公司 | Automatically temperature compensating average value over-current protection circuit |
| CN105322924A (en) * | 2014-05-29 | 2016-02-10 | 英飞凌科技股份有限公司 | Method and apparatus for compensating PVT variations |
| CN105322924B (en) * | 2014-05-29 | 2019-04-16 | 英飞凌科技股份有限公司 | Method and apparatus for compensating PVT difference |
| CN105207323A (en) * | 2015-11-12 | 2015-12-30 | 无锡中感微电子股份有限公司 | Charger with thermal regulation circuit |
| CN107888063A (en) * | 2018-02-11 | 2018-04-06 | 漳州科华技术有限责任公司 | A kind of output current peak factor method and device for improving inverter |
| CN107888063B (en) * | 2018-02-11 | 2019-10-01 | 漳州科华技术有限责任公司 | A kind of output current peak coefficient method and device improving inverter |
| CN110361587A (en) * | 2019-08-07 | 2019-10-22 | 珠海格力电器股份有限公司 | A kind of over-current detection circuit with temperature-compensating |
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|---|---|
| CN100433492C (en) | 2008-11-12 |
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Effective date of registration: 20210108 Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: 200233, room 67, building 421, No. 1103 Rainbow Road, Shanghai Patentee before: CHINA RESOURCES POWTECH (SHANGHAI) Co.,Ltd. |