Two tunic structure coated glass of no light pollution
Technical field
The invention belongs to technical field of glass materials, relate to a kind of two tunic structure coated glass of not having light pollution specifically.
Background technology
The widely-used of glass curtain wall is a notable feature of modern society's Highrise buildings.It is integrated the body of wall and the door and window of buildings, has the building external structure concurrently and goes along with sb. to guard him function and decoration functions, highlights the modern sense and the artistry of buildings.Glass curtain wall through the development of two more than ten years, nowadays extensively spreads all over China big and medium-sized cities in early eighties introducing in last century China.To the end of the year 2004, only just there are 2000 of curtain buildingses Beijing, 1,400 ten thousand square metres of areas.There are 1300 of curtain buildingses in Shanghai, and the curtain wall total area is above 1,000 ten thousand square metres.China has millions of square metres curtain wall to come into operation every year, and continues to increase with 10% speed.According to statistics, China has become maximum in the world glass curtain wall producing country and has used state.
Yet along with the deterioration of energy scarcity situation and carrying out of building energy conservation work, people recognize the defective of glass curtain wall aspect energy consumption gradually.The curtain wall that uses conventional clear glass to build, its heat transfer coefficient height, to sunlight and not effectively restriction of infrared emanation, whole the cold effect of building Xia Redong is fairly obvious, must adopt air-conditioning to regulate the room temperature throughout the year, and it is very huge to consume energy.New " the public building energy-saving design standard " put into effect of China (GB50189-2005) clearly stipulated: glass curtain wall can not use simple glass, must use energy-saving glass.
Energy-saving curtain wall glass on the market mainly comprises low emissivity glass (Low-E) and sunlight control (or solar heat reflection) glass (Sun-E) at present.Although country has made " qualification " (seeing the relevant regulations during " glass curtain wall optical property " (GB/T18091-2000)), the optical performance parameter of this " qualification " above-mentioned just in fact two class glass own to the reflectivity of cladding glass.Except the energy-saving glass (as water white transparency and light grey Low-E glass) of individual colors has lower visible reflectivity (about 10%), the glass of other most colors is all about 30%.
In addition, though the coated glass that is coated with individual layer tool infrared external reflection functional membrane material in optics and thermal property not as good as Sun-E or Low-E, technology is simple, and is cheap, should also be a good selection on energy-saving application.But this class coated glass also shows higher visible reflectance.The common clear plate glass reflectivity that does not have plated film is about 8%, and the reflectivity of glass rises to 20-30% even higher behind the plated film.When sun exposure is to the coated glass surface,, cause so-called light pollution because the reflex action of glass can produce the intensive reflected glare in closely.
Light pollution may cause serious unexpected traffic accident, and a flickering glass curtain wall mansion just as the mirror that piece is huge, carries out (repeatedly) reflection to daylight and various light.Dazzling reflected light enters in the automobile of running at high speed, and can cause officer's blind suddenly or eyesight illusion, serious harm pedestrian and driver's traffic safety.Build near the glass curtain wall in residential quarter in, daylight, advertising lighting or city floodlighting are reflexed in the resident family, cause detrimentally affect for resident's live and work environment.Every year is all received the complaint of a lot of relevant light pollution from various parts of the country by State Environmental Protection Administration.
Be to alleviate the problem of light pollution, there is clearer and more definite regulation in China in the use of cladding glass, and geographical position, direction and height of cladding glass building or the like have all been done restriction.As stipulate the whole surface glass curtain wall of the inaccurate construction of new building, that the arrangement of glass-wall building thing is too unconcentrated, or the place of concentrating in the Residential areas, glass curtain wall or the like is not set towards residential building.But cladding glass is as the notable feature of modern architecture, not only can beautifying urban environment, can also save building materials, alleviate the advantages such as deadweight of buildings, if can fundamentally effectively reduce the reflectivity of glass, overcome the shortcoming of light pollution, make it to have concurrently energy-saving and cost-reducing function simultaneously, cladding glass will inevitably be used widely, and this helps promoting the formation of the environmentally friendly and conservation-minded society of China.
Summary of the invention
The objective of the invention is to utilize the heat-reflective and the optics antireflective know-why of transparent conductive body, provide a kind of low reflection not have two tunic structure coated glass of light pollution.
For realizing above purpose, the present invention has taked following technical scheme: deposition layer of transparent conducting film, the optics antireflective coating that deposition one deck matches on nesa coating again on substrate of glass.
Nesa coating can be the transparent semiconductor metal oxide film, and refractive index n is 1.7≤n≤2.2 in optical wavelength 555 nanometers; The refractive index n of optics antireflective coating is in optical wavelength 550 nanometers 1.2≤n≤1.8.
In the present invention, described transparent semiconductor metal oxide film mainly is to be mixed with at least a above In among Sn, Mo, Sb, Zn, the F
2O
3Film, or be mixed with at least a above SnO among Mo, Sb, Zn, the F
2Film, or SnO
2With In
2O
3By mass ratio is 1: 9 blended ito thin film, or is mixed with at least a above ZnO film among Al, Si, B, Dy, Tb, In, Ga, the F.Specific refractory power is between 1.7~2.2 in visible light wave range for this class transparent semiconductor metal oxide film, and the reflectivity of generation is about about 20%.
In actual applications, transparent semiconductor metal oxide film thickness mainly is by the doping of element decision.When low-doped (atomicity per-cent is less than 0.5%), a little less than the infrared external reflection, film needs bigger thickness; During heavy doping (atomicity per-cent is greater than 2%), the infrared external reflection ability is strong, and film can be very thin.In general, thickness is the needs that 20~300 nanometers can satisfy various situations.
Element doping is little to the influence of the specific refractory power in the visible region, and mainly influence is region of ultra-red, therefore, can not consider the element doping situation in the design of visible light anti-reflection.
As previously mentioned, the transparent semiconductor metal oxide film of specific refractory power between 1.7~2.2, its reflectivity is about 20%.In order farthest to reduce reflection, according to optics antireflective principle, the specific refractory power of optics antireflective coating requires between 1.2~1.8, and corresponding matching thickness is 10~300 nanometers.Corresponding optics antireflective coating is selected from SiO
2, SiO
aN
b, MgO, Y
2O
3, Al
2O
3, AlN, AlOF, InOF, SnOF, MgF
2, CaF
2In a kind of, 1≤a≤2,0≤b≤1 wherein.
Before above-mentioned two tunics deposition, also can on glass substrate, deposit one deck SiO earlier
2Transition layer is to prevent that diffusion of contaminants in the glass matrix is in the transparent semiconductor metal oxide.Because SiO
2The specific refractory power and the glass substrate of transition layer are approaching, and the optical property of above-mentioned two tunic structures can not be affected.
Reflectivity through the coated glass among the present invention after the optimization design can be low to moderate about 6%, and is than the reflectivity before the glass coating 8%, also low.Simultaneously, the transmitance of this coated glass is 80% being promoted to about 90% before the plated film also, and window daylighting usefulness is further improved.
Based on the consideration of technology and cost, the adulterated ZnO film of the preferred Al of transparent semiconductor metal oxide among the present invention, the preferred SiO of optics antireflective coating
2Or Al
2O
3, these two kinds of optics antireflective coatings have physicochemical property preferably, can play a very good protection to the transparent semiconductor metal oxide.
The effect of the nesa coating of coated glass of the present invention is that reverberation is infrared, realizes the heat-insulation and heat-preservation function of glass port, reaches energy saving purposes; The effect of optics antireflective coating is the lighting performance that reduces visible reflectance and strengthen window.The infrared external reflection two tunic structure coated glass of no light pollution have advantages such as film layer structure is simple, with low cost, anticorrosive, and weather resistance is strong.
Nesa coating and optics antireflective coating all have very high chemical stability among the present invention, need not seal, and coated glass can use with monolithic form.In order to obtain better effect of heat insulation, also can be applied to it is characterized in that it and second glazing plate are in parallel spaced-apart relation in the vitreum of multiple layer assembling.
Description of drawings
Fig. 1 is two tunic structure coated glass structural representations of the present invention, glass matrix 1 is wherein arranged, nesa coating 2, optics antireflective coating 3.
Fig. 2 is transparent conductive film ZnO:Al (Al atomicity per-cent is 1.2%) and the adulterated In of Sn
2O
3(mass ratio In
2O
3: SnO
2=9: 1, i.e. ITO) the dispersion relation figure of refractive index n and optical extinction coefficient k.Film adopts the magnetron sputtering mode, uses corresponding ceramic target, sputtering sedimentation in Ar gas.Optical constant is recorded by spectroscopic ellipsometers.
Fig. 3 is among the embodiment 1, SiO
2Antireflective coating deposits the reflection spectrum of preceding (dotted line) and deposition back (solid line) and sees through spectrogram.
Fig. 4 is among the embodiment 4, Al
2O
3Antireflective coating deposits the reflection spectrum of preceding (dotted line) and deposition back (solid line) and sees through spectrogram.
Embodiment
Below in conjunction with drawings and Examples content of the present invention is described further, but protection domain of the present invention is not limited only to following examples, everyly belongs to the technical scheme that content of the present invention comprises, all belong to the protection domain of this patent.
The optical constant (see figure 2) of utilizing film can obtain the top condition of antireflective coating, i.e. specific refractory power of antireflective film the best and thickness to calculating that optical multilayer is.
Transparent conductive film in the following examples and antireflection film all adopt conventional magnetron sputtering technique deposition to obtain.This magnetic control sputtering system comprises a sample and presets a chamber and a main sputtering chamber (diameter 45cm).Main sputtering chamber is connected with a molecular diffusion pump, and background vacuum pressure is 2.0 * 10
-6Pa.It can be 2 inches different targets for three diameters are installed that sputtering chamber has three target position.Each target position is inclined upwardly with 30 ° of angles, can burnt mode cosputtering of copolymerization or the independently mode sputter of three targets.The sample microscope carrier can heat up and can be in sputter procedure uniform rotation to guarantee film forming homogeneity.
Embodiment 1:
Glass substrate is successively put into alcohol and acetone soln after ultrasonic pond is cleaned 15 minutes, dry up, put into main vacuum sputtering chamber by the sample chamber of presetting with nitrogen.The mode of deposition of nesa coating is as follows: target ZnO:Al (the hundreds of proportions by subtraction of foreign atom are 1.2%), and working gas is a high purity Ar gas, flow 32sccm (cubic centimetre/second), sputtering chamber aero operating pressure 0.6Pa, radio frequency power 40W, 300 ℃ of glass substrate temperature, depositing time 25 minutes.The sedimentary condition of antireflective coating is as follows: target is simple substance Si, and working gas is high purity Ar and O
2Mixed gas, Ar airshed 32sccm, O
2Airshed is 0.6sccm, sputtering chamber aero operating pressure 0.6Pa, radio frequency power 80W, 300 ℃ of glass substrate temperature, depositing time 30 minutes.Film layer structure after deposition finishes is: SiO
2(100nm)/ZnO:Al (80nm)/glass.The optical property index that obtains is as follows: visible reflectance is about 5%, and visible light transmissivity 94% is referring to Fig. 3.
Embodiment 2:
Nesa coating ZnO:Al and antireflective coating SiO
2The mode of deposition of mode of deposition identical with embodiment 1, but glass substrate specially heats up in the deposition process, in the state of nature deposit.Film layer structure still is: SiO
2(100nm)/ZnO:Al (80nm)/glass.This coated glass is put into retort furnace anneal, 500 ℃ of annealing temperatures, time 5-10 minute.The optical property index that obtains is as follows: visible reflectance is about 7%, visible light transmissivity 92%.
Embodiment 3:
The mode of deposition of nesa coating ZnO:Al is identical with embodiment 1, but the depositing time difference is 70 minutes.Antireflective coating SiO
2Mode of deposition and embodiment 1 identical, the sedimentary time still is 30 minutes.Film layer structure after deposition finishes is: SiO
2(100nm)/ZnO:Al (240nm)/glass.The optical property index that obtains is as follows: visible reflectance is about 5%, visible light transmissivity 91%.
Embodiment 4:
The mode of deposition of nesa coating ZnO:Al is identical with embodiment 1, and depositing time is 25 minutes.Antireflective coating Al
2O
3Mode of deposition as follows: target is ceramic Al
2O
3, working gas is high purity Ar, airshed 10sccm, sputtering chamber aero operating pressure 0.2Pa, radio frequency power 160W, 300 ℃ of glass substrate temperature, depositing time 160 minutes.Film layer structure after deposition finishes is: Al
2O
3(220nm)/ZnO:Al (80nm)/glass.The optical property index that obtains is as follows: visible reflectance is about 8%, and visible light transmissivity is about 91%, referring to Fig. 4.
Embodiment 5:
Clean glass substrate and put into main vacuum sputtering chamber as embodiment 1.The mode of deposition of nesa coating is as follows: target is the adulterated In of Sn
2O
3(mass ratio In
2O
3: SnO
2=9: 1), i.e. ITO.Working gas is a high purity Ar gas, flow 32sccm, sputtering chamber aero operating pressure 0.6Pa, radio frequency power 30W, 200 ℃ of glass substrate temperature, depositing time 20 minutes.Antireflective coating SiO
2Mode of deposition with embodiment 1,200 ℃ of glass substrate temperature, depositing time 30 minutes.Film layer structure after deposition finishes is: SiO
2(100nm)/ITO (80nm)/glass.The optical property index that obtains is as follows: visible reflectance is about 6%, visible light transmissivity 92%.
Embodiment 6:
The mode of deposition of nesa coating ITO is fully with embodiment 5, depositing time 20 minutes.The mode of deposition of antireflective coating is as follows: target is ceramic MgO, and working gas is high purity Ar, airshed 10sccm, sputtering chamber aero operating pressure 0.2Pa, radio frequency power 160W, 200 ℃ of glass substrate temperature, depositing time 90 minutes.Film layer structure after deposition finishes is: MgO (100nm)/ITO (80nm)/glass.The optical property index that obtains is as follows: visible reflectance is about 9%, visible light transmissivity 89%.
Embodiment 7:
Clean glass substrate and put into main vacuum sputtering chamber as embodiment 1.The mode of deposition of nesa coating is as follows: adopt the double target co-sputtering mode, target is respectively ZnO and ZnF
2, working gas is a high purity Ar gas, flow 32sccm, and sputtering chamber aero operating pressure 0.6Pa, the radio frequency power of ZnO target are 120W, ZnF
2The radio frequency power 30W of target, 200 ℃ of glass substrate temperature, depositing time is about 55 minutes.Antireflective coating SiO
2Mode of deposition with embodiment 1,200 ℃ of glass substrate temperature, depositing time 30 minutes.Film layer structure after deposition finishes is: SiO
2(100nm)/ZnO:F (100nm)/glass.The optical property index that obtains is as follows: visible reflectance is about 8%, visible light transmissivity 88%.
Embodiment 8:
Clean glass substrate and put into main vacuum sputtering chamber as embodiment 1.The mode of deposition of nesa coating is as follows: target is In
2O
3, working gas is high purity Ar and CF
4Mixed gas, the flow of Ar gas is 32sccm, CF
4The flow of gas is 1.2sccm, about sputtering chamber aero operating pressure 0.61Pa, and In
2O
3The radio frequency power of target is 120W, 200 ℃ of glass substrate temperature, and depositing time is about 70 minutes.The mode of deposition of antireflective coating is as follows: target is ceramic Al
2O
3, working gas is high purity Ar, airshed 10sccm, sputtering chamber aero operating pressure 0.2Pa, radio frequency power 160W, 200 ℃ of glass substrate temperature, depositing time 40 minutes.Film layer structure after deposition finishes is: Al
2O
3(50nm)/In
2O
3: F (80nm)/glass.The optical property index that obtains is as follows: visible reflectance is about 9%, visible light transmissivity 87%.
In above embodiment, before described two tunics deposition, also can on glass substrate, deposit one deck SiO earlier
2Transition layer, experiment effect is unaffected.