CN1802724B - 高频等离子体射束源及喷射表面的方法 - Google Patents

高频等离子体射束源及喷射表面的方法 Download PDF

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Publication number: CN1802724B
Authority: CN; China
Prior art keywords: plasma; plasma beam; grid; beam source; frequency
Prior art date: 2003-04-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CN2004800159205A

Other languages

English (en)

Chinese (zh)

Other versions

CN1802724A (zh

Inventor

R·贝克曼

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Buehler Alzenau GmbH

Original Assignee

Leybold Optics GmbH

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-04-11

Filing date

2004-04-08

Publication date

2011-05-25

2004-04-08 Application filed by Leybold Optics GmbH filed Critical Leybold Optics GmbH

2006-07-12 Publication of CN1802724A publication Critical patent/CN1802724A/zh

2011-05-25 Application granted granted Critical

2011-05-25 Publication of CN1802724B publication Critical patent/CN1802724B/zh

2024-04-08 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 19
230000001678 irradiating effect Effects 0.000 title abstract 2
239000011248 coating agent Substances 0.000 claims description 35
238000000576 coating method Methods 0.000 claims description 35
239000000758 substrate Substances 0.000 claims description 31
230000007935 neutral effect Effects 0.000 claims description 16
239000007921 spray Substances 0.000 claims description 15
238000002347 injection Methods 0.000 claims description 12
239000007924 injection Substances 0.000 claims description 12
238000007747 plating Methods 0.000 claims description 10
238000005507 spraying Methods 0.000 claims description 10
230000008020 evaporation Effects 0.000 claims description 6
238000001704 evaporation Methods 0.000 claims description 6
238000005315 distribution function Methods 0.000 claims description 4
230000015572 biosynthetic process Effects 0.000 claims description 3
239000007787 solid Substances 0.000 claims description 3
239000012634 fragment Substances 0.000 claims description 2
230000003993 interaction Effects 0.000 claims description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
229910052721 tungsten Inorganic materials 0.000 claims description 2
239000010937 tungsten Substances 0.000 claims description 2
238000000605 extraction Methods 0.000 abstract description 6
230000005855 radiation Effects 0.000 abstract description 2
238000009826 distribution Methods 0.000 description 7
150000002500 ions Chemical class 0.000 description 7
239000000463 material Substances 0.000 description 6
230000003287 optical effect Effects 0.000 description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
239000007789 gas Substances 0.000 description 3
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
230000005540 biological transmission Effects 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000008021 deposition Effects 0.000 description 2
239000004615 ingredient Substances 0.000 description 2
BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
229910010413 TiO 2 Inorganic materials 0.000 description 1
230000002411 adverse Effects 0.000 description 1
150000001768 cations Chemical class 0.000 description 1
230000005684 electric field Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
239000000243 solution Substances 0.000 description 1
238000002834 transmittance Methods 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/54—Plasma accelerators

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Spectroscopy & Molecular Physics (AREA)
Electromagnetism (AREA)
Combustion & Propulsion (AREA)
Plasma Technology (AREA)
Physical Vapour Deposition (AREA)
Chemically Coating (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Application Of Or Painting With Fluid Materials (AREA)
ing And Chemical Polishing (AREA)
Physical Or Chemical Processes And Apparatus (AREA)

CN2004800159205A 2003-04-11 2004-04-08 高频等离子体射束源及喷射表面的方法 Expired - Lifetime CN1802724B (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
DE10317027.8		2003-04-11
DE10317027A DE10317027A1 (de)	2003-04-11	2003-04-11	Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche
PCT/EP2004/003796 WO2004091264A2 (de)	2003-04-11	2004-04-08	Hochfrequenz-plasmastrahlquelle und verfahren zum bestrahlen einer oberfläche

Publications (2)

Publication Number	Publication Date
CN1802724A CN1802724A (zh)	2006-07-12
CN1802724B true CN1802724B (zh)	2011-05-25

Family

ID=33154197

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN2004800159205A Expired - Lifetime CN1802724B (zh)	2003-04-11	2004-04-08	高频等离子体射束源及喷射表面的方法

Country Status (11)

Country	Link
US (1)	US20060099341A1 (de)
EP (1)	EP1614138B1 (de)
JP (1)	JP4669472B2 (de)
KR (1)	KR101112529B1 (de)
CN (1)	CN1802724B (de)
AT (1)	ATE463041T1 (de)
CA (1)	CA2522058C (de)
DE (2)	DE10317027A1 (de)
ES (1)	ES2343960T3 (de)
TW (1)	TW200423826A (de)
WO (1)	WO2004091264A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20100126337A (ko) *	2008-01-30	2010-12-01	어플라이드 머티어리얼스, 인코포레이티드	표면파 런칭 플라즈마 방전 소스들의 사전-이온화를 위한 시스템 및 방법
US8698400B2 (en)	2009-04-28	2014-04-15	Leybold Optics Gmbh	Method for producing a plasma beam and plasma source
DE102009018912A1 (de) *	2009-04-28	2010-11-18	Leybold Optics Gmbh	Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle
EP2447393A1 (de) *	2010-10-27	2012-05-02	Applied Materials, Inc.	Verdampfungssystem und Verfahren
RU2521823C1 (ru) *	2013-04-17	2014-07-10	Государственный научный центр Российской Федерации-федеральное государственное унитарное предприятие "Исследовательский Центр имени М.В. Келдыша"	Способ ускоренных испытаний катодов плазменных двигателей и устройство для его осуществления
EP4006948A1 (de) *	2020-11-26	2022-06-01	Bühler AG	Extraktionsgitter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4401054A (en) *	1980-05-02	1983-08-30	Nippon Telegraph & Telephone Public Corporation	Plasma deposition apparatus
US5156703A (en) *	1987-03-18	1992-10-20	Hans Oechsner	Mthod for the surface treatment of semiconductors by particle bombardment
US5656141A (en) *	1990-06-25	1997-08-12	Leybold Aktiengesellschaft	Apparatus for coating substrates

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FR2218652B1 (de) *	1973-02-20	1976-09-10	Thomson Csf
US4447773A (en) *	1981-06-22	1984-05-08	California Institute Of Technology	Ion beam accelerator system
US4511593A (en) *	1983-01-17	1985-04-16	Multi-Arc Vacuum Systems Inc.	Vapor deposition apparatus and method
US4587430A (en) *	1983-02-10	1986-05-06	Mission Research Corporation	Ion implantation source and device
FR2619247A1 (fr) *	1987-08-05	1989-02-10	Realisations Nucleaires Et	Implanteur d'ions metalliques
US5036252A (en) *	1988-04-26	1991-07-30	Hauzer Holding Bv	Radio frequency ion beam source
JPH0265230A (ja) *	1988-08-31	1990-03-05	Mitsubishi Electric Corp	プラズマ反応装置
GB8905073D0 (en) *	1989-03-06	1989-04-19	Nordiko Ltd	Ion gun
DE4239511A1 (de) *	1992-11-25	1994-05-26	Leybold Ag	Verfahren und Vorrichtung zum Beschichten von Substraten
GB2299137B (en) *	1995-03-20	1999-04-28	Matra Marconi Space Uk Ltd	Ion thruster
US6646223B2 (en) *	1999-12-28	2003-11-11	Texas Instruments Incorporated	Method for improving ash rate uniformity in photoresist ashing process equipment
JP2001210245A (ja) *	2000-01-26	2001-08-03	Shincron:Kk	イオン源およびイオン引き出し電極
AU2001247685A1 (en) *	2000-03-30	2001-10-15	Tokyo Electron Limited	Method of and apparatus for tunable gas injection in a plasma processing system
US6250070B1 (en) *	2000-05-09	2001-06-26	Hughes Electronics Corporation	Ion thruster with ion-extraction grids having compound contour shapes
JP3485896B2 (ja) *	2000-07-11	2004-01-13	東京エレクトロン株式会社	プラズマ処理装置
JP4073204B2 (ja) *	2001-11-19	2008-04-09	株式会社荏原製作所	エッチング方法

2003
- 2003-04-11 DE DE10317027A patent/DE10317027A1/de not_active Withdrawn
2004
- 2004-04-08 AT AT04726483T patent/ATE463041T1/de not_active IP Right Cessation
- 2004-04-08 WO PCT/EP2004/003796 patent/WO2004091264A2/de active Search and Examination
- 2004-04-08 CA CA2522058A patent/CA2522058C/en not_active Expired - Fee Related
- 2004-04-08 KR KR1020057019326A patent/KR101112529B1/ko active IP Right Grant
- 2004-04-08 EP EP04726483A patent/EP1614138B1/de not_active Expired - Lifetime
- 2004-04-08 US US10/552,677 patent/US20060099341A1/en not_active Abandoned
- 2004-04-08 DE DE502004010974T patent/DE502004010974D1/de not_active Expired - Lifetime
- 2004-04-08 JP JP2006505081A patent/JP4669472B2/ja not_active Expired - Lifetime
- 2004-04-08 ES ES04726483T patent/ES2343960T3/es not_active Expired - Lifetime
- 2004-04-08 CN CN2004800159205A patent/CN1802724B/zh not_active Expired - Lifetime
- 2004-04-09 TW TW093109834A patent/TW200423826A/zh not_active IP Right Cessation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4401054A (en) *	1980-05-02	1983-08-30	Nippon Telegraph & Telephone Public Corporation	Plasma deposition apparatus
US5156703A (en) *	1987-03-18	1992-10-20	Hans Oechsner	Mthod for the surface treatment of semiconductors by particle bombardment
US5656141A (en) *	1990-06-25	1997-08-12	Leybold Aktiengesellschaft	Apparatus for coating substrates

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特開2001-210245A 2001.08.03

Also Published As

Publication number	Publication date
DE10317027A1 (de)	2004-11-11
JP4669472B2 (ja)	2011-04-13
CA2522058A1 (en)	2004-10-21
EP1614138B1 (de)	2010-03-31
WO2004091264A2 (de)	2004-10-21
KR101112529B1 (ko)	2012-02-17
WO2004091264A3 (de)	2005-03-10
CA2522058C (en)	2013-01-22
US20060099341A1 (en)	2006-05-11
JP2006522870A (ja)	2006-10-05
KR20050118234A (ko)	2005-12-15
TW200423826A (en)	2004-11-01
ATE463041T1 (de)	2010-04-15
EP1614138A2 (de)	2006-01-11
DE502004010974D1 (de)	2010-05-12
TWI379620B (de)	2012-12-11
CN1802724A (zh)	2006-07-12
ES2343960T3 (es)	2010-08-13

Legal Events

Date	Code	Title	Description
2006-07-12	C06	Publication
2006-07-12	PB01	Publication
2006-09-06	C10	Entry into substantive examination
2006-09-06	SE01	Entry into force of request for substantive examination
2011-05-25	C14	Grant of patent or utility model
2011-05-25	GR01	Patent grant
2024-04-26	CX01	Expiry of patent term
2024-04-26	CX01	Expiry of patent term	Granted publication date: 20110525

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EP0502385B1 (de)	1995-06-21	Verfahren zur Herstellung einer doppelseitigen Beschichtung von optischen Werkstücken
DE602004007017T2 (de)	2008-02-07	Spannungsungleichförmigkeits-kompensationsverfahren für einen hochfrequenz-plasmareaktor zur behandlung rechteckiger grossflächiger substrate
EP0446596B1 (de)	1994-11-09	PCVD-Verfahren zur Herstellung eines auf der Innen- und/oder Aussenfläche mit einem dielektrischen und/oder metallischen Schichtsystem versehenen annähernd kalottenförmigen Substrats
DE69218924T2 (de)	1998-01-15	System zur Erzeugung eines Plasmas mit hoher Dichte
US7342361B2 (en)	2008-03-11	Plasma source
RU2224050C2 (ru)	2004-02-20	Способ и устройство для осаждения двухосно текстурированных покрытий
DE4039930A1 (de)	1992-06-17	Vorrichtung fuer plasmabehandlung
DE19634795A1 (de)	1998-03-05	Plasma-CVD-Anlage mit einem Array von Mikrowellen-Plasmaelektroden und Plasma-CVD-Verfahren
CN1802724B (zh)	2011-05-25	高频等离子体射束源及喷射表面的方法
DE19740793A1 (de)	1999-03-18	Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden
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WO1991012353A1 (de)	1991-08-22	Vorrichtung zum behandeln von substraten in einem durch mikrowellen erzeugten, gasgestützten plasma
DE10145201C1 (de)	2002-11-21	Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben
KR101151225B1 (ko)	2012-06-14	축전 결합 플라즈마 발생 장치 및 그 형성 방법
EP0794014B1 (de)	2002-09-11	Verfahren und Einrichtung zur Hochfrequenz-Plasmapolymerisation
DE3931713C1 (de)	1991-03-14
EP0501466A1 (de)	1992-09-02	Niederdruck-Plasmagenerator
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EP1854907B1 (de)	2012-02-29	Vorrichtung zur plasmagestützten chemischen Oberflächenbehandlung von substraten im Vakuum
KR101123004B1 (ko)	2012-03-12	플라즈마 처리 장치
EP1293586A2 (de)	2003-03-19	Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben