CN1793439A - Process for growing lanthanum chloride crystal by falling method of antivacuum crucible - Google Patents
Process for growing lanthanum chloride crystal by falling method of antivacuum crucible Download PDFInfo
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- CN1793439A CN1793439A CN 200510110784 CN200510110784A CN1793439A CN 1793439 A CN1793439 A CN 1793439A CN 200510110784 CN200510110784 CN 200510110784 CN 200510110784 A CN200510110784 A CN 200510110784A CN 1793439 A CN1793439 A CN 1793439A
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- lanthanum chloride
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Abstract
The invention relates to the method used non vacuum falling crucible method to growth lanthanum chloride crystal. Its features are that the raw material is high pure LaCl<SUB>3</SUB> containing crystal water; no water lanthanum chloride material is dehydrated under inert atmosphere at under 150 centigrade degree and preserved heat for 10-20h. Deoxidizer is one of activated carbon, crystalline flour, lead fluoride or carbon tetrachloride. Static double warm areas furnace structure is adopted. Micro motor drive speed adjusting gear is used to make crucible descend with adjustable constant speed. It has simple operation, low cost, and good performance, and is fit for large-scale production. The formed Ce: LaCl<SUB>3</SUB> crystal can be applied to nuclear medicine imaging SPECT, nuclear radiation detecting, safety inspection, and geologic prospecting.
Description
Technical field
The present invention relates to a kind of method of growing lanthanum chloride crystal by falling method of antivacuum crucible, relate to pure Lanthanum trichloride (LaCl or rather
3) and Ce-doped lanthanum oxide (LaCl
3: Ce) crystalline preparation method, particularly a kind of with platinum crucible descent method for growing high-quality Lanthanum trichloride and Ce-doped lanthanum oxide crystalline method.Belong to the crystal technique field.
Technical background
LaCl
3: Ce is at a kind of novel scintillation crystal by discoveries such as Dutch scientist O.Guillot in 1999, belongs to hexagonal system, and spacer is P6
3/ m, density is 3.86g/cm
3, fusing point is 859 ℃ of [Guillot-Noel O.De Haas J.T.M.Dorenbos P.et al., Optical and scintillationproperties of cerium-doped LaCl
3, LuBr
3And LuCl
3.J.Lumin.1999,85:21-35].At that time, they to adopt the Bridgman method of the relative crucible vertical shifting of body of heater to grow volume be φ 5 * 40mm
3LaCl
3: the crystal of 0.57%Ce.2002, C.P.Allier etc. recorded φ 8 * 2.5mm with avalanche diode
3LaCl
3: the light output of Ce crystal under the 662keV gamma-radiation excites is up to 46000 ± 5000ph/MeV, energy resolution 3.2%, fast decay (25ns), good temporal resolution (224ps), good linear response and little [Allier C.P. such as twilight sunset, Van Loef E.V.D., Dorenbos P.Readout of a LaCl
3(Ce
3+) scintillation crystal with a large areaavalanche photodiode.Nucl.Instru.﹠amp; Meth.Phys.Res.2002, A485:547-550].They will all have boundless application prospect at aspects such as nuclear medicine (PET, SPECT etc.), safety inspection, geological prospecting, oil well detections its excellent scintillation properties indication.
2003, scholars such as K.S.Shah utilized quartz crucible, adopted the method for vacuum-sealing and chemical reaction to handle raw material, grew size with the Bridgman method and were about 2.5cm
3LaCl
3: Ce crystal [Shah K.S., Glodo J., Klugerman M., LaCl
3: Ce scintillator for γ-raydetection.Nucl.Instru.﹠amp; Meth.Phys.Res.2003, A505:76-81].But owing to reasons such as at high temperature the oxidation of the crystal water that exists in the raw material and water, volatility, in crystal growing process, easily cause bursting of quartz crucible, cause the growth failure.In addition, for the water in the raw material or other oxygenate impurity also can with LaCl
3Reaction forms Lanthanum monochloride monoxide (LaOCl), thereby crystal devitrification and scintillation properties are descended.
Summary of the invention
The objective of the invention is to adopt improved antivacuum Bridgman-Stockbarge method for growing to go out high quality, lanthanum chloride crystal method cheaply.
Core of the present invention is: under the mobile inert atmosphere protection raw material is dried pre-treatment, to eliminate planar water and crystal water wherein; Thereafter the reductor that mixes makes oxygenate impurity residual in itself and raw material or the crucible carry out chemical reaction, to eliminate the harm of these impurity to crystal property; Raw material, reductor and activator (CeCl
3Deng) in loft drier, mix, be sealed in again in the platinum crucible, can be at inert atmosphere (N
2, Ar gas) or chlorine-containing gas in realize crystal growth with falling crucible method.
A kind of through improved method at growing lanthanum chloride crystal by falling method of antivacuum crucible, comprise raw material processing and crystal growth, it is characterized in that:
(a) with the commercially available high-purity Lanthanum trichloride that contains 3～7 crystal water be starting raw material, raw material is carried out processed stage by stage, bake out temperature is not less than 150 ℃.The anhydrous lanthanum chloride raw material that obtains after the oven dry is placed in loft drier or the vacuum chamber immediately;
(b) active substance of selecting to have strong reducing action makes it and the raw material of step (a) the weight ratio uniform mixing with 1: 1000 as reductor; Described reductor is carbon dust, silica flour, fluoridize in lead powder or the tetracol phenixin any.The LaCl of Ce is mixed in growth
3During crystal, described doping agent is CeCl
3, the doping volumetric molar concentration is 10～15% (with LaCl
3Be base), CeCl before mixing
3Also need in being not less than 120 ℃ of baking ovens, to dry 4-6 hour.Described high-purity LaCl
3Or CeCl
3Concentration be 6N or 5N.
(c) compound with step (b) gained places the precious metal crucible, then crucible is sealed; Use the noble metal platinum crucible, the crucible wall thickness is 0.12-0.20mm, and shape is relevant with size with the shape of requirement growing crystal with size; Described precious metal crucible is the crucible that platinum, iridium, rhodium or ruthenium are made, but is the most frequently used with platinum crucible; And the crucible shape can be circle, rectangular cylindricality, hexagon cylindricality or other polygon cylindricalitys, select for use any then can according to the growth crystal shape and decide, but rectangle and cylindrical be the most frequently used two kinds.
(d) adopt immobilized two-zone furnace body structure (accompanying drawing 1), drive speed change gear with micromachine crucible is descended with adjustable constant rate of speed; The change material temperature of high-temperature zone is 900-950 ℃, and thermograde is 20～30 ℃/cm, speed of growth 0.5-2.5mm/h; Crystal growing process carries out under non-vacuum condition, and described non-vacuum condition is chloride gas or rare gas element;
(e) behind the growth ending, cooling rate is 15～20 ℃/hour, and cooling under inert atmosphere or chlorine-containing gas protection.
The structure of stove is divided upper and lower two temperature fields: the temperature of top temperature field is controlled at Lanthanum trichloride (LaCl
3) the above temperature of fusing point, the temperature of bottom temperature field is lower than Lanthanum trichloride (LaCl
3) melting temperature.Adopt platinum-rhodium thermocouple that the temperature of stove is detected, within 0.5 ℃ of scope, with thermopair the temperature variations in each crucible is monitored simultaneously with the precision of precision temperature controller control furnace.Be provided with the auxiliary heater that globar or other resistance are formed in the stove bottom.The present invention adopts body of heater static, drives speed change gear with micromachine crucible is descended with adjustable constant rate of speed.
Compare with other growth method that adopts, outstanding advantage of the present invention is that the adding by reductor had both overcome the Lanthanum monochloride monoxide impurity that moisture Lanthanum trichloride raw material is produced in the high temperature dehydration process, also eliminated oxygen-containing gas in other oxygenate impurity in the raw material and the precious metal crucible simultaneously to the harm of crystal property.That this technology in use has is easy and simple to handle, cost is low, performance good and characteristics such as suitable production in enormous quantities.The cerium doping Lanthanum trichloride (Ce:LaCl that the present invention grew
3) crystal is applicable to Application Areass such as nuclear medicine SPECT (imaging of single photon positron emission computerized tomography), nuclear radiation detection, safety inspection geological prospecting.
Description of drawings
The furnace binding of the two warm area crystal growing furnaces of Fig. 1
The 1-lagging material; The 2-well heater; 3-high-temperature zone temperature thermocouple; The 4-thermal baffle;
5-cold zone temperature thermocouple; The 6-crucible holder; The 7-lifting drive
Fig. 2 prepares the antivacuum method process flow sheet of lanthanum chloride crystal
Embodiment:
Embodiment 1
Growth LaCl
3The concrete processing step of crystalline is:
(1) with high-purity LaCl
3NH
2O (n=3～7) is a raw material, at the mobile atmosphere (N of inertia
2Or Ar gas) or in the atmosphere (HCl) that suppress to flow, under 120 ℃ temperature, slough earlier wherein planar water according to the differential thermal analysis result of raw material, under the temperature of 150 ℃, 180 ℃, 220 ℃ and 250 ℃, remove crystal water, oven dry, drying treatment stage by stage respectively by temperature programming then;
(2) selecting tetracol phenixin is reductor, the powder mixing after handling with step (1), and add-on is 800ppm;
(3) the LaCl of φ 25 * 200mm
3The grain crystalline substance places the crucible bottom of rectangular cylindricality iridium system, puts into the raw material of above-mentioned steps (2) again, and crucible is sealed; Crucible wall thickness 0.20mm;
(4) adopt four straight type Si-Mo rods, the every limit of burner hearth is provided with two.Use the globars on one on every limit to make auxiliary heater;
(5) jacking system by stove advances the packaged good crucible of step (4) in the burner hearth shown in Figure 1, guarantees that the residing temperature in seed crystal upper end is no more than LaCl
3The crystalline fusing point slowly is elevated to 910 ℃ to the temperature of high-temperature zone, and constant temperature is 5 hours at least, to guarantee the complete fusion of raw material in the crucible;
(6) start the decline system, crucible is descended reposefully according to the speed of 2mm/h;
(7) grow as clear as crystal cerium doping Lanthanum trichloride (Ce:LaCl
3) crystal.
Embodiment 2
(1) high-purity LaCl
3NH
20 (n=3～7) are raw material, at the mobile atmosphere (N of inertia
2Or Ar gas) or in the atmosphere (HCl) that suppress to flow, under 120 ℃ temperature, slough earlier wherein planar water according to the differential thermal analysis result of raw material, under the temperature of 150 ℃, 180 ℃, 220 ℃ and 250 ℃, remove crystal water, oven dry, drying treatment stage by stage respectively by temperature programming then;
(2) the high-purity Cerium II Chloride (CeCl that uses as luminescent activator
3) before mixing main raw material, also need to be not less than in 120 ℃ the baking oven oven dry 4-6 hour in temperature.Then according to being equivalent to LaCl
3The ratio batching and the thorough mixing of mol ratio 10% are even;
(3) select platinum material, be processed into the cylindrical crucible of φ 25 * 200mm, wall thickness is: 0.12mm, and the argon gas sealing, and, guarantee to be in sealed state through airtight leak detection.
(4) a LaCl who is of a size of φ 25 * 40mm
3Seed crystal places the bottom of the described platinum crucible of step (3), again the compound of dried reductor (C powder) and step (2) the configuration concentration according to 500ppm is incorporated into reductor in the raw material, in the mixed step (2) of packing into immediately after evenly in the ready platinum crucible and the crucible oral area is sealed.
(5) adopt four straight type Si-Mo rods, the every limit of burner hearth is provided with two.Use the globars on one on every limit to make auxiliary heater.
(6) jacking system by stove advances the packaged good crucible of step (4) in the burner hearth shown in Figure 1, guarantees that the residing temperature in seed crystal upper end is no more than LaCl
3The crystalline fusing point slowly is elevated to 940 ℃ to the temperature of high-temperature zone, and constant temperature 3 hours is to guarantee the complete fusion of raw material in the crucible;
(7) start the decline system, crucible is descended reposefully according to the speed of 0.5mm/h;
(8) grow as clear as crystal cerium doping Lanthanum trichloride (Ce:LaCl
3) crystal.
Claims (10)
1. one kind through improved method at growing lanthanum chloride crystal by falling method of antivacuum crucible, comprises that raw material handles and crystal growth, it is characterized in that:
(a) with the commercially available high-purity Lanthanum trichloride that contains crystal water be starting raw material, in the protective atmosphere that flows, raw material is carried out processed stage by stage, bake out temperature is not less than 150 ℃.The anhydrous lanthanum chloride raw material that obtains after the oven dry is placed in loft drier or the vacuum chamber immediately;
(b) active substance of selecting to have strong reducing action makes it and the raw material of step (a) the weight ratio uniform mixing with 1: 1000 as reductor;
(c) with LaCl
3Seed crystal is placed on the bottom of precious metal crucible and the compound of step (b) gained is placed the precious metal crucible, then crucible is sealed; The shape of crucible is consistent with the shape and the size of requirement growing crystal with size;
(d) crystal growing process carries out in the non-vacuum condition process furnace, and described non-vacuum condition is chlorine-containing gas or rare gas element, and the melt temperature is 900-950 ℃, and the thermograde of decline is 20～30 ℃/cm, speed of growth 0.5-2.5mm/h;
(e) behind the growth ending, cooling rate is 15～20 ℃/hour, and cooling under inert atmosphere or chlorine-containing gas protection.
2. by the method for the described improved growing lanthanum chloride crystal by falling method of antivacuum crucible of claim 1, it is characterized in that described reductor is any one in activated carbon powder, silica flour, plumbous fluoride or the tetracol phenixin.
3. by the method for the described improved growing lanthanum chloride crystal by falling method of antivacuum crucible of claim 1, it is characterized in that described precious metal crucible is any one in platinum, iridium, ruthenium and the rhodium.A kind of in cylindrical, the rectangular cylindricality of being shaped as of crucible, hexagon cylindricality or other the polygon cylindricalitys.
4. by the method for claim 1 or 3 described improved growing lanthanum chloride crystal by falling method of antivacuum crucible, it is characterized in that described crucible is a platinum crucible; Be shaped as rectangular cylindricality or cylindrical.
5. by claim 1 or 3 described improved antivacuum methods, it is characterized in that described crucible wall thickness is 0.12～0.20mm with the Bridgman-Stockbarge method for growing lanthanum chloride crystal.
6. by the described method of claim 1, it is characterized in that dewatering stage by stage, remove planar water at 120 ℃ earlier, remove crystal water stage by stage at 150 ℃, 180 ℃, 220 ℃ and 250 ℃ then through improved growing lanthanum chloride crystal by falling method of antivacuum crucible.
7. by the method for the described improved growing lanthanum chloride crystal by falling method of antivacuum crucible of claim 1, it is characterized in that:
(a) with the commercially available high-purity Lanthanum trichloride that contains crystal water be starting raw material, in the protective atmosphere that flows, raw material is carried out processed stage by stage, bake out temperature is not less than 150 ℃.The anhydrous lanthanum chloride raw material that obtains after the oven dry is placed in loft drier or the vacuum chamber immediately;
(b) active substance of selecting to have strong reducing action makes it and the raw material of step (a) the weight ratio uniform mixing with 1: 1000 as reductor; And add through pretreated doping agent CeCl
3, CeCl
3, the doping volumetric molar concentration is 10～15%.
(c) with LaCl
3Seed crystal is placed on the bottom of precious metal crucible and the compound of step (b) gained is placed the precious metal crucible, then crucible is sealed; The shape of crucible is consistent with the shape and the size of requirement growing crystal with size;
(d) crystal growing process carries out in the non-vacuum condition process furnace, and described non-vacuum condition is chlorine-containing gas or rare gas element, and the melt temperature is 900-950 ℃, and the thermograde of decline is 20～30 ℃/cm, speed of growth 0.5-2.5mm/h;
(e) behind the growth ending, cooling rate is 15～20 ℃/hour, and cooling under inert atmosphere or chlorine-containing gas protection.
8. by the method for the described improved growing lanthanum chloride crystal by falling method of antivacuum crucible of claim 7, it is characterized in that the pre-treatment stone of doping agent is to dry 4-6 hour in 120 ℃ of baking ovens in temperature; The processing of Lanthanum trichloride is to dewater stage by stage, removes planar water at 120 ℃ earlier, removes crystal water stage by stage at 150 ℃, 180 ℃, 220 ℃ and 250 ℃ then.
9. by the method for the described improved growing lanthanum chloride crystal by falling method of antivacuum crucible of claim 7, it is characterized in that described reductor is any one in activated carbon powder, silica flour, plumbous fluoride or the tetracol phenixin.
10. by the method for the described improved growing lanthanum chloride crystal by falling method of antivacuum crucible of claim 7, it is characterized in that described precious metal crucible is any one in platinum, iridium, ruthenium and the rhodium; A kind of in cylindrical, the rectangular cylindricality of being shaped as of crucible, hexagon cylindricality or other the polygon cylindricalitys.
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| CN100385045C CN100385045C (en) | 2008-04-30 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102650076A (en) * | 2011-02-28 | 2012-08-29 | 上海硅酸盐研究所中试基地 | Method for growing lead chlorofluoride crystal and application of crystal produced by same |
| CN102781894A (en) * | 2010-03-04 | 2012-11-14 | 陶氏环球技术有限责任公司 | Process for producing methyl chloride and sulfur dioxide |
| CN109368708A (en) * | 2018-12-29 | 2019-02-22 | 台州学院 | It is a kind of to prepare pure phase Sr10Mn19Co1As20The method of compound |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605425B (en) * | 2012-04-19 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | Laser matrix crystal of lead chlorofluoride doped with rare earth ions and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL148277B1 (en) * | 1986-11-24 | 1989-09-30 | Method of obtaining crystalline lanthanum chloride of particulary high purity | |
| US7084403B2 (en) * | 2003-10-17 | 2006-08-01 | General Electric Company | Scintillator compositions, and related processes and articles of manufacture |
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2005
- 2005-11-25 CN CNB2005101107844A patent/CN100385045C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102781894A (en) * | 2010-03-04 | 2012-11-14 | 陶氏环球技术有限责任公司 | Process for producing methyl chloride and sulfur dioxide |
| CN102781894B (en) * | 2010-03-04 | 2014-11-05 | 陶氏环球技术有限责任公司 | Process for producing methyl chloride and sulfur dioxide |
| CN102650076A (en) * | 2011-02-28 | 2012-08-29 | 上海硅酸盐研究所中试基地 | Method for growing lead chlorofluoride crystal and application of crystal produced by same |
| CN109368708A (en) * | 2018-12-29 | 2019-02-22 | 台州学院 | It is a kind of to prepare pure phase Sr10Mn19Co1As20The method of compound |
| CN109368708B (en) * | 2018-12-29 | 2020-07-31 | 台州学院 | Preparation of pure phase Sr10Mn19Co1As20Method for preparing compounds |
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| CN100385045C (en) | 2008-04-30 |
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