CN1791942B - 测试ram地址解码器的电阻性开路缺陷 - Google Patents
测试ram地址解码器的电阻性开路缺陷 Download PDFInfo
- Publication number
- CN1791942B CN1791942B CN200480013812.4A CN200480013812A CN1791942B CN 1791942 B CN1791942 B CN 1791942B CN 200480013812 A CN200480013812 A CN 200480013812A CN 1791942 B CN1791942 B CN 1791942B
- Authority
- CN
- China
- Prior art keywords
- module
- logic state
- unit
- write
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 53
- 230000007547 defect Effects 0.000 title abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 33
- 230000004087 circulation Effects 0.000 claims description 26
- 230000000295 complement effect Effects 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 description 11
- 230000009471 action Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- XEBWQGVWTUSTLN-UHFFFAOYSA-M phenylmercury acetate Chemical compound CC(=O)O[Hg]C1=CC=CC=C1 XEBWQGVWTUSTLN-UHFFFAOYSA-M 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/024—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
Landscapes
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03101471 | 2003-05-22 | ||
EP03101471.5 | 2003-05-22 | ||
PCT/IB2004/050696 WO2004105043A1 (en) | 2003-05-22 | 2004-05-14 | Testing ram address decoder for resistive open defects |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1791942A CN1791942A (zh) | 2006-06-21 |
CN1791942B true CN1791942B (zh) | 2010-10-13 |
Family
ID=33462202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480013812.4A Expired - Fee Related CN1791942B (zh) | 2003-05-22 | 2004-05-14 | 测试ram地址解码器的电阻性开路缺陷 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7392465B2 (zh) |
EP (1) | EP1629505B1 (zh) |
JP (1) | JP2007505439A (zh) |
KR (1) | KR20060014057A (zh) |
CN (1) | CN1791942B (zh) |
DE (1) | DE602004022045D1 (zh) |
TW (1) | TWI330717B (zh) |
WO (1) | WO2004105043A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4608891B2 (ja) * | 2004-01-30 | 2011-01-12 | 株式会社デンソー | Romのデコーダテスト回路装置 |
US7916544B2 (en) | 2008-01-25 | 2011-03-29 | Micron Technology, Inc. | Random telegraph signal noise reduction scheme for semiconductor memories |
US7808849B2 (en) * | 2008-07-08 | 2010-10-05 | Nvidia Corporation | Read leveling of memory units designed to receive access requests in a sequential chained topology |
US7796465B2 (en) * | 2008-07-09 | 2010-09-14 | Nvidia Corporation | Write leveling of memory units designed to receive access requests in a sequential chained topology |
US8461884B2 (en) * | 2008-08-12 | 2013-06-11 | Nvidia Corporation | Programmable delay circuit providing for a wide span of delays |
US8516315B2 (en) | 2010-09-03 | 2013-08-20 | Stmicroelectronics International N.V. | Testing of non stuck-at faults in memory |
US9122891B2 (en) * | 2013-08-12 | 2015-09-01 | Microsoft Technology Licensing, Llc | Functional timing sensors |
US11435940B2 (en) * | 2021-02-02 | 2022-09-06 | Nxp B.V. | Testing a memory which includes conservative reversible logic |
US11507296B2 (en) * | 2021-03-10 | 2022-11-22 | Micron Technology, Inc. | Repair operation techniques |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1008848B (zh) * | 1987-02-13 | 1990-07-18 | 国际商用机器公司 | 大存储器有效地址测试法 |
CN1177818A (zh) * | 1996-09-24 | 1998-04-01 | 三菱电机株式会社 | 半导体存储装置及其测试方法 |
CN1042178C (zh) * | 1993-09-03 | 1999-02-17 | 摩托罗拉公司 | 测试静态ram的方法和装置 |
CN1344416A (zh) * | 1999-03-17 | 2002-04-10 | 因芬尼昂技术股份公司 | 电子电路内装自测试的装置和方法 |
US20030002365A1 (en) * | 2001-06-29 | 2003-01-02 | Fujitsu Limited | Test apparatus for semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5642362A (en) * | 1994-07-20 | 1997-06-24 | International Business Machines Corporation | Scan-based delay tests having enhanced test vector pattern generation |
JPH09507945A (ja) * | 1994-11-09 | 1997-08-12 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | メモリアドレスデコーダと誤り許容メモリアドレスデコーダをテストする方法 |
US6345373B1 (en) * | 1999-03-29 | 2002-02-05 | The University Of California | System and method for testing high speed VLSI devices using slower testers |
US6453437B1 (en) * | 1999-07-01 | 2002-09-17 | Synopsys, Inc. | Method and system for performing transition fault simulation along long circuit paths for high-quality automatic test pattern generation |
US6651227B2 (en) * | 2001-10-22 | 2003-11-18 | Motorola, Inc. | Method for generating transition delay fault test patterns |
US7039845B2 (en) * | 2002-03-28 | 2006-05-02 | Jeff Rearick | Method and apparatus for deriving a bounded set of path delay test patterns covering all transition faults |
-
2004
- 2004-05-14 US US10/557,375 patent/US7392465B2/en not_active Expired - Fee Related
- 2004-05-14 JP JP2006530853A patent/JP2007505439A/ja active Pending
- 2004-05-14 KR KR1020057022216A patent/KR20060014057A/ko not_active Application Discontinuation
- 2004-05-14 EP EP04733058A patent/EP1629505B1/en not_active Expired - Lifetime
- 2004-05-14 DE DE602004022045T patent/DE602004022045D1/de not_active Expired - Lifetime
- 2004-05-14 WO PCT/IB2004/050696 patent/WO2004105043A1/en active Application Filing
- 2004-05-14 CN CN200480013812.4A patent/CN1791942B/zh not_active Expired - Fee Related
- 2004-05-19 TW TW093114153A patent/TWI330717B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1008848B (zh) * | 1987-02-13 | 1990-07-18 | 国际商用机器公司 | 大存储器有效地址测试法 |
CN1042178C (zh) * | 1993-09-03 | 1999-02-17 | 摩托罗拉公司 | 测试静态ram的方法和装置 |
CN1177818A (zh) * | 1996-09-24 | 1998-04-01 | 三菱电机株式会社 | 半导体存储装置及其测试方法 |
CN1344416A (zh) * | 1999-03-17 | 2002-04-10 | 因芬尼昂技术股份公司 | 电子电路内装自测试的装置和方法 |
US20030002365A1 (en) * | 2001-06-29 | 2003-01-02 | Fujitsu Limited | Test apparatus for semiconductor device |
Non-Patent Citations (1)
Title |
---|
US 20030002365 A1,全文. |
Also Published As
Publication number | Publication date |
---|---|
TW200506402A (en) | 2005-02-16 |
US7392465B2 (en) | 2008-06-24 |
DE602004022045D1 (de) | 2009-08-27 |
KR20060014057A (ko) | 2006-02-14 |
WO2004105043A1 (en) | 2004-12-02 |
US20070067706A1 (en) | 2007-03-22 |
EP1629505A1 (en) | 2006-03-01 |
EP1629505B1 (en) | 2009-07-15 |
TWI330717B (en) | 2010-09-21 |
JP2007505439A (ja) | 2007-03-08 |
CN1791942A (zh) | 2006-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7301797B2 (en) | Method of operating semiconductor integrated circuit including SRAM block and semiconductor integrated circuit including SRAM block | |
US4956819A (en) | Circuit configuration and a method of testing storage cells | |
CN1838308B (zh) | 用于改变字线有效工作周期的方法和装置 | |
KR0122100B1 (ko) | 스트레스회로를 가지는 반도체집적회로 및 그 스트레스전압공급방법 | |
US20070047347A1 (en) | Semiconductor memory devices and a method thereof | |
KR20070086643A (ko) | Sram 테스트 장치 및 방법 | |
KR19980086628A (ko) | 워드선 다중 선택 가능한 반도체 기억 장치 및 그 시험 방법 | |
US20030117872A1 (en) | Semiconductor memory device | |
CN1791942B (zh) | 测试ram地址解码器的电阻性开路缺陷 | |
CN114236366A (zh) | 支持乱序成品测试的芯片及测试方法 | |
US8451653B2 (en) | Semiconductor integrated circuit having a test function for detecting a defective cell | |
KR100796050B1 (ko) | 반도체 메모리 장치 및 멀티플렉서 제어 방법 | |
KR100248645B1 (ko) | 반도체 기억 장치 및 그 테스트 방법 | |
EP1724788A1 (en) | Improved built-in self-test method and system | |
Sachdev | Test and testability techniques for open defects in RAM address decoders | |
Sachdev | Reducing the CMOS RAM test complexity with I DDQ and voltage testing | |
JP3344926B2 (ja) | ワード線多重選択可能な半導体記憶装置 | |
US7286426B2 (en) | Semiconductor memory device | |
US6681350B2 (en) | Method and apparatus for testing memory cells for data retention faults | |
US6873556B2 (en) | Semiconductor memory device with test mode and testing method thereof | |
US7689878B2 (en) | System and method for testing defects in an electronic circuit | |
JP5315090B2 (ja) | 半導体記憶装置及びその検査方法 | |
US10937481B1 (en) | Polarity swapping circuitry | |
KR100345363B1 (ko) | 어드레스 검출 테스트 모드 회로 | |
Priya et al. | A survey on dram testing and its algorithms |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20071012 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071012 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101013 Termination date: 20130514 |