CN1791184A - Active pixel sensor and image sensing module for simplifying transistor structure - Google Patents
Active pixel sensor and image sensing module for simplifying transistor structure Download PDFInfo
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- CN1791184A CN1791184A CNA2004101007803A CN200410100780A CN1791184A CN 1791184 A CN1791184 A CN 1791184A CN A2004101007803 A CNA2004101007803 A CN A2004101007803A CN 200410100780 A CN200410100780 A CN 200410100780A CN 1791184 A CN1791184 A CN 1791184A
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Abstract
The active pixel sensor for simplified transistor structure comprises a light-sensitive element to convert a light signal into electric signal and update the electric signal after reading a reset signal, a first transistor connected to the former element to amplify and convert the electric signal into an output signal, and a second transistor connected to the first one to control the signal output according to a selective signal. Compared with the past sensor of 3T or 4T structure, this invention has well light transmittance ratio and light sensitive ability.
Description
Technical field
The present invention relates to a kind of element sensor, particularly relate to a kind of with CMOS (Complementary Metal Oxide Semiconductor) (Complementary Metal-Oxide Semiconductor; CMOS) active pixel sensor made of technology and image sensing module with these element sensors.
Background technology
The kind of present image sensing device, except development ccd image sensing technology more of a specified duration is arranged, the cmos image sensing technology of making in CMOS (Complementary Metal Oxide Semiconductor) (CMOS) mode is also arranged, and the cmos image sensing technology is except can be applicable on the optical mouse, also widely apply comprising each side such as digital camera, video telephone, third generation cell phone system, therefore become the main flow of image development in science and technology.
Existing C MOS image sensing technology is to form cmos image sensor (Image sensor) with the form of pel array (Pixel Array), pel array then is to be formed by many pixels (Pixel) unit cell arrangement, general pixel cell mainly can be divided into passive type element sensor (Passive Pixel Sensor) or active pixel sensor (Active Pixel Sensor), is described below respectively:
As shown in Figure 1, show a passive type element sensor 8, it has a photodiode (Photo diode) 81 and one transistor (Transfer gate) 82, owing to only have a transistor, can abbreviate the passive type element sensor 8 of 1T structure as.Its sensing principle is excited by extraneous light 7 and the corresponding optical charge that produces by photodiode 81, and the switch that sees through a row output signal 801 may command transistors 82 whether, when transistor 82 is opened (ON), then each element sensor 8 is exported delegation's output signals 802, read each line output signal 802 at last again, then, just can obtain the picture signal of pel array integral body through processes such as signal amplification and analog-to-digital conversion.
Yet, in the passive type element sensor 8 of 1T structure, because its induced signal is minimum, and the sense wire Louis that it had generation parasitic capacitance, cause that higher noise output is arranged, be not widely used, therefore the development of active pixel sensor has been arranged.
As shown in Figure 2, a kind of active image sensing module 9 has been described, has had a pel array 91, a row addressing circuit 92, a row decoder 93, a timing sequence generating circuit 94 and an amplifier 95.Wherein, pel array 91 has the element sensor 911 of M*N; Row addressing circuit 92 is controlled these element sensors 911 of each row in order to buffering output array selecting signal 901, reset signal 902, in order to constantly the extraneous light (figure does not show) that receives be converted to electric charge output and upgrade; After the line scan signals 903 of each row electric charge output of 93 receptions of row decoder is decoded, exported by amplifier 95; As for 94 of timing sequence generating circuit is the array selecting signal 901 for row addressing circuit 92, the output of reset signal 902, and makes time sequence control for the line scan signals 903 of row decoder 93.
Shown in Fig. 3,4, shown two types of present active pixel sensor respectively, divide into the element sensor 3,4 of 3T structure and 4T structure according to its transistorized quantity that has respectively now, and be described below:
As shown in Figure 3, the element sensor 3 of 3T structure is described, has a photodiode PD
3And three transistors, these transistors are called replacement (Reset) transistor T according to its effect
31, one source pole follower (Source follower) transistor T
32An and column selection (Row select) transistor T
33
The principle of element sensor 3 runnings is at transistor T
31When receiving the reset signal 301 of a high level, transistor T
31Be unlatching (ON) state, and will be last time by photodiode PD
3The optical charge of collecting is removed; Then, transistor T
31Receiving low level reset signal 301 is it to close (OFF) state, photodiode PD
3Still be subjected to exciting of extraneous light 7 and the corresponding optical charge that produces, and optical charge is converted to voltage output, and begin discharge and make V
AValue reduces; Then by transistor T
32Make the voltage level translation, make transistor T
33Open and receive an array selecting signal 302 back outputs, thus, just can import with reset signal 301 again and upgrade store charge by the line output signal 303 that reads each element sensor 3 at every turn constantly to obtain new signal.
Wherein, turn-on transistor T
31Mode, be to transistor T
31Grid import the reset signal 301 of a high logic level to give photodiode PD
3Reverse bias, so photodiode PD
3Middle meeting forms a depletion region (Depletion Region), can make by illumination to absorb photon in this depletion region and produce electric current.
When between exposure period, transistor T
31When closing, photodiode PD
3Produce one and be a certain proportion of electron hole pair because of accepting extraneous light 7 irradiation, and this electron hole pair can move to photodiode PD respectively with its intensity of light source
3Two ends, reverse bias is reduced, and at transistor T
33During unlatching, can obtain one by its source electrode and stop exposure voltage V
2Still keep transistor T thereafter,
33Unlatching, and make transistor T again
31Open, and also by transistor T
33Source electrode obtain an initial exposure voltage V
1, if will stop exposure voltage V
2With initial exposure voltage V
1The two subtracts each other, and just can be scaled actual exposure voltage value.
Because the element sensor 3 of 3T structure is with reset transistor T
31Mode upgrade and read signal because transistor T
32Can prevent the line output signal 303 and the V that read
ATherefore the phase mutual interference compares with the situation that the element sensor 8 of passive type is directly reset with reset signal 801, and noise is lower.
As shown in Figure 4, the element sensor 4 of 4T structure has a photodiode PD
4, a capacitor C
fAnd four transistors, these transistors are called a transfering transistor T according to its effect
41, a reset transistor T
42, one source pole follows transistor T
43An and column selection transistor T
44, wherein, transistor T
42, T
43And T
44Effect because the transistor T that is had with the element sensor 3 of 3T structure
31, T
32And T
33Function class seemingly, repeat no more.
4T structure and 3T structure different have been in, the element sensor more than 4 of 4T structure transistor T
41And capacitor C
f, and photodiode PD
4Be connected to transistor T
41An end, transistor T
41The other end then with transistor T
42, T
43And capacitor C
fIn parallel; In addition, the photodiode PD that has of 4T structure
4Structure and the photodiode PD that has of 3T structure
3Difference is because be the positive-negative-positive structure, so photodiode PD
4Effect with strangulation voltage can make photodiode PD
3Initial exposure voltage be maintained and the unlikely noise jamming that is subjected to, so the element sensor 4 of 4T structure antagonism anti noise are better.
When element sensor 4 in when running, be to transistor T
41Grid import a high logical signal V
DDTo give photodiode PD
4Suitable reverse bias is so at photodiode PD
4In just can form depletion region because photodiode PD
4Be the positive-negative-positive structure, make depletion region become big because increase voltage, cause depletion region to take whole N type district at last, therefore voltage can not enter again and the effect of strangulation voltage has been arranged, and can make by illumination and to absorb photon in this depletion region and to produce the electric charge accumulation.
When wanting the exposure of calculating pixel transducer 4, be first turn-on transistor T
41And transistor T
42, make photodiode PD
4Strangulation on a fixing voltage level, thereafter, transistor T
41Close, make photodiode PD
4Beginning exposes via receiving extraneous light 7; When desiring sense data, turn-on transistor T then
42, with capacitor C
fLevel charge to an initial fixed level V
B', and to read this level earlier be V
B' line output signal 403; Then, again with transistor T
41Open this photodiode PD
4Just by the design of electric charge well depth, by transistor T
41Reach capacitor C
f, and because capacitor C
fVoltage can be accumulated, therefore a new level V can be obtained
B", level V
B'-V
B" promptly be the exposure voltage value.So see through transistor T
42 Input reset signal 401 makes its continual renovation, and by transistor T
43The voltage level phorogenesis, output array selecting signal 402 make transistor T
44Open, thus, just can upgrade store charge constantly to obtain new signal with reset signal 301 inputs again by the line output signal 303 that reads each element sensor 3 at every turn.
Generally speaking, active pixel sensor has following shortcoming at present:
1. in the 3T structure, because photodiode PD
3Be to be electrically connected to transistor T
31Source electrode, and see through this transistor T
31And be reset its reverse bias, and therefore, when this transistor T
31Or photodiode PD
3When the situation generation of leakage current (Leakage current) is arranged, will influence this initial exposure voltage V
1And termination exposure voltage V
2Voltage level.In addition, reverse bias is through reset transistor T
31The bulk effect that is caused (Body effect) and the pressure drop that produces and the decay of the barrier current potential of itself also can reduce initial exposure voltage V
1, and relatively reduce dynamic range of images, influence image quality.
2. in the 4T structure, mainly be to utilize transistor T
41Isolate photodiode PD
4And reset transistor T
42Source electrode to reduce leakage current, but owing to need 4 transistors, make its aperture opening ratio (Aperture ratio), just the printing opacity ratio can reduce, this is because among the unit are of element sensor 4, if the more transistor then its area occupied ratio increase, cause the area ratio of light-permeable to reduce relatively, therefore make the area of the whole institute of pel array energy printing opacity also decrease.
3. the characteristic of transistor itself is easy to generate the KTC noise, is difficult to eliminate.
4. rayed is when photodiode, and the depletion region of the PN junction in photodiode can be isolated electron hole pair and produce photoelectric current, and the light of different wave length can be absorbed at the PN junction of different depth.For example: short wavelength's light can absorb at the depletion region near the surface, long wavelength's light can absorb at darker depletion region, since the depletion region of PN junction many photodiode than the depths, therefore compared to the long ruddiness of wavelength, present element sensor is comparatively not good than the detectivity of short blue light for wavelength.
The accompanying drawing summary
The present invention is described in detail below in conjunction with drawings and Examples:
Fig. 1 is a circuit diagram, and present passive type element sensor is described;
Fig. 2 is a circuit block diagram, and present active image sensing module is described, has a pel array of being made up of a plurality of active pixel sensor;
Fig. 3 is a circuit diagram, illustrates one of two types of present active pixel sensor: the element sensor of 3T structure;
Fig. 4 is a circuit diagram, the another kind of type of present active pixel sensor is described: the element sensor of 4T structure;
Fig. 5 is a circuit diagram, and first preferred embodiment of the active pixel sensor of simplifying transistor structure of the present invention is described;
Fig. 6 is a schematic diagram, illustrates in first preferred embodiment that the component structure of replacement diode is by the p type gesture well that forms in the n type doped region of light-sensitive element 21;
Fig. 7 is a schematic diagram, and image sensing module of the present invention is described, it has the active pixel sensor of a plurality of simplifying transistor structures;
Fig. 8 is a circuit diagram, and second preferred embodiment of the active pixel sensor of simplifying transistor structure of the present invention is described;
Fig. 9 is a schematic diagram, illustrates that the light-sensitive element in second preferred embodiment is the three gesture well constructions of a PNPN.
Embodiment
About aforementioned and other technology contents, characteristics and effect of the present invention, in following cooperation two DETAILED DESCRIPTION OF THE PREFERRED with reference to the accompanying drawings, can clearly present.
As shown in Figure 5, be first preferred embodiment of the active pixel sensor 2 of simplifying transistor structure of the present invention, the preferred embodiment comprises one photosensitive (Photosensitive) element 21, a replacement diode 22, a first transistor 23, a transistor seconds 24.
Wherein, light-sensitive element 21 and replacement diode 22 are the structure of photodiode (Photo diode), and it is suitable for when an exposure intersegmental, and an extraneous light 7 is converted to an electric signal; Light-sensitive element 21 is to be in parallel with replacement diode 22, and the initial and termination of the size control exposure period of the voltage level of foundation one reset signal 201; The first transistor 23 is in order to amplify electric signal and to be converted to an output signal, in this preferred embodiment, the first transistor 23 is one source pole follower (Source follower), has that input impedance is big, output impedance is little, current gain reaches voltage gain greatly near characteristic such as 1.The first transistor 23 mainly is to utilize the drain electrode of nmos pass transistor to receive a high level voltage V
DD, grid and light-sensitive element 21, replacement diode 22 are of coupled connections, and source electrode then is of coupled connections with transistor seconds 24.
Transistor seconds 24 is the sizes that are electrically connected the first transistor 23 and comply with the logic level of an array selecting signal 202, and whether control sends line output signal 203.Wherein, transistor seconds 24 is to be a nmos pass transistor in this preferred embodiment, and its drain electrode is electrically connected with the source electrode of the first transistor 23, and then in order to receive array selecting signal 202, source electrode is then in order to send line output signal 203 for grid.
Active pixel sensor 2 is operated according to following manner: at first, anode by replacement diode 22, the reset signal 201 of input high level is to give light-sensitive element 21 reverse bias, so the PN junction in the light-sensitive element 21 can form depletion region, can make absorption photon in this depletion region and produce electric current by illumination, in addition, because replacement diode 22 itself also is a photodiode, therefore also can be because of illumination produce electric current, can be in output S
OutObtain an initial exposure voltage V
1
Then, the reset signal 201 of input low voltage level, light-sensitive element 21 begins exposure with replacement diode 22, accept extraneous light 7 shine and produce one and this intensity of light source be a certain proportion of electric charge; When the grid of transistor seconds 24, obtain the array selecting signal 202 of a height (High) logic level and when opening, then via the amplification of the first transistor 23, and by output S
OutObtain one and stop exposure voltage V
2If output is with initial exposure voltage V
1With termination exposure voltage V
2Two voltages subtract each other and obtain voltage difference, promptly finish the single exposure cycle.
As shown in Figure 6, the component structure of replacement diode 22 is in the n type doped region by light-sensitive element 21, form a p type gesture well, so its formed depletion region, more multi-photon can be absorbed, and then increased the photoperceptivity of light-sensitive element 21, more relatively improved initial exposure voltage V
1, and increased dynamic range of images, and improved image sensitivity.
As shown in Figure 7, be an image sensing module 200, wherein, image sensing module 200 has a plurality of active pixel sensors 2, and each element sensor 2 is matrix form to be arranged, and the transmission line of the element sensor 2 shared transmission reset signals 201 of each row; The transmission line of the also shared transmission array selecting signal 201 of element sensor 2 of each row, these transmission lines also are connected with the gate coupled of each transistor seconds 24; Transmission line as for each 2 shared transmission line output signal 203 of element sensor of going is exported signal, can be with reference to the explanation of figure 2 as for its control mode.
As shown in Figure 8, second preferred embodiment for the active pixel sensor 5 of simplifying transistor structure of the present invention, the preferred embodiment comprises a light-sensitive element 51, one source pole is followed a transistor 52 and a column selection transistor 53, wherein, except the component structure of light-sensitive element 51 is different with first preferred embodiment, because other source electrode is followed transistor 52 and column selection transistor 53 members, with reset signal 501, the action principle of array selecting signal 502 and line output signal, all identical with described the first transistor 23 of first preferred embodiment and transistor seconds 24, so no longer given unnecessary details at this.
As shown in Figure 9, display light photosensitive elements 51 is three gesture wells (Triple well) structures of a PNPN, except reducing the interactive interference (Cross Talk) between each element sensor, the depletion region that its inner PNPN knot forms, can increase the absorption efficiency of photon, and then increased the photoperceptivity of light-sensitive element 51, more relatively improved initial exposure voltage V
1, and increased dynamic range of images, and improved image sensitivity, and, also can have been charged to light-sensitive element 51 simply by the end of PNPN.
Conclude above-mentionedly, the 3T that the active pixel sensor 2,5 of simplifying transistor structure of the present invention is more generally commonly used and the element sensor of 4T structure have following advantage:
1. because in the active pixel sensor 2, the p type gesture well that this replacement diode 22 produces in the n of light-sensitive element 21 type doped region forms, so will form a class positive-negative-positive structure, can give suitable reverse bias easily to photodiode via built-in PN diode current flow, also therefore can eliminate transistorized bulk effect in 3T and the 4T structure, and improve initial exposure voltage V
1, and increased dynamic range of images, improved image sensitivity.
2. owing to be with the transistorized use of replacement diode 22 replacements, therefore the KTC noise that can avoid general transistor when On/Off, can produce.
3. because the replacement diode 22 of active pixel sensor 2 is to form in light-sensitive element 21, and active pixel sensor 5 more only needs one group of light-sensitive element 51, and each active pixel sensor 2,5 all only has two transistors 23,24 and 52,53, so light transmittance of its unit are, with more the pixel unit area light transmittance increase than 3T, 4T structure is many, the photosensitive area that is this pixel 2 effectively increases, and has more promoted its sensitivity.
4. the PN junction 12 of light-sensitive element 21 is because near the surface of active pixel sensor 2, can the short blue light of more efficiently induction wavelength, and more sensitive.
Claims (6)
1, a kind of active pixel sensor of simplifying transistor structure is characterized in that: this element sensor comprises:
One light-sensitive element in order to after the sensitization light signal being converted to an electric signal, and upgrades this electric signal after reading a reset signal;
One the first transistor is electrically connected this light-sensitive element, is in order to this electric signal is amplified and be converted to an output signal; And
One transistor seconds is electrically connected this first transistor, and complies with the output of this output signal of selection signal controlling.
2, the active pixel sensor of simplifying transistor structure as claimed in claim 1 is characterized in that:
This light-sensitive element is the photodiode of a PNPN three gesture well constructions.
3, the active pixel sensor of simplifying transistor structure as claimed in claim 1 is characterized in that:
This element sensor also comprises a replacement diode, and this replacement diode is in order to export this reset signal to upgrade the electric signal of this light-sensitive element.
4, the active pixel sensor of simplifying transistor structure as claimed in claim 3 is characterized in that:
This replacement diode is a photodiode.
5, the active pixel sensor of simplifying transistor structure as claimed in claim 3 is characterized in that:
This replacement diode is the p type gesture well that produces in the n of this light-sensitive element type doped region and the class positive-negative-positive structure that forms.
6, a kind of image sensing module, comprise a plurality of active pixel sensors, respectively this element sensor is the matrix form arrangement, and the transmission line of shared this reset signal of transmission of element sensor of each row, the element sensor of each row also coupled in common connects one in order to transmit the row transmission line of this array selecting signal, element sensor of each row then coupled in common connect delegation's transmission line with signal in order to transmit this line output signal, it is characterized in that:
Respectively this element sensor has a light-sensitive element, a first transistor and a transistor seconds, wherein, this light-sensitive element is converted to an electric signal with a light signal after in order to sensitization, and after reading a reset signal, upgrade this electric signal, this the first transistor is electrically connected this light-sensitive element, be in order to this electric signal being amplified and be converted to an output signal, this transistor seconds is electrically connected this first transistor, and according to the output of array selecting signal control delegation output signal.
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|---|---|---|---|
| CNA2004101007803A CN1791184A (en) | 2004-12-14 | 2004-12-14 | Active pixel sensor and image sensing module for simplifying transistor structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004101007803A CN1791184A (en) | 2004-12-14 | 2004-12-14 | Active pixel sensor and image sensing module for simplifying transistor structure |
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| CN101644587B (en) * | 2009-02-19 | 2011-08-10 | 友达光电股份有限公司 | Sensor element, photosensitive matrix, touch panel and touch sensing method |
| CN101193203B (en) * | 2006-11-29 | 2011-09-14 | 全视科技有限公司 | Image sensors with output noise reduction mechanisms |
| CN102401906A (en) * | 2010-09-19 | 2012-04-04 | 同方威视技术股份有限公司 | Radiation detector as well as imaging device, electrode structure and image acquiring method thereof |
| CN102420946A (en) * | 2011-11-10 | 2012-04-18 | 深港产学研基地 | CMOS image sensor pixel unit with high filling factor and pixel array work method thereof |
| CN102447851A (en) * | 2011-12-26 | 2012-05-09 | 深港产学研基地 | Dual complementary metal oxide semiconductor (CMOS) image sensor pixel unit with high filling factor, and working method |
| CN102487436A (en) * | 2010-12-01 | 2012-06-06 | 英属开曼群岛商恒景科技股份有限公司 | Sensing pixel array and sensing apparatus |
| CN102957880A (en) * | 2012-11-22 | 2013-03-06 | 北京思比科微电子技术股份有限公司 | Active pixel, high-dynamic range image sensor and method for operating active pixel |
| CN105789202A (en) * | 2016-05-20 | 2016-07-20 | 京东方科技集团股份有限公司 | Active pixel sensor circuit, driving method and image sensor |
| CN106375687A (en) * | 2016-07-07 | 2017-02-01 | 友达光电股份有限公司 | pixel sensing device and control method |
| CN112333404A (en) * | 2020-11-17 | 2021-02-05 | 京东方科技集团股份有限公司 | Photosensitive unit, photosensitive device, driving method and display device |
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| CN101193203B (en) * | 2006-11-29 | 2011-09-14 | 全视科技有限公司 | Image sensors with output noise reduction mechanisms |
| CN101644587B (en) * | 2009-02-19 | 2011-08-10 | 友达光电股份有限公司 | Sensor element, photosensitive matrix, touch panel and touch sensing method |
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| CN102420946A (en) * | 2011-11-10 | 2012-04-18 | 深港产学研基地 | CMOS image sensor pixel unit with high filling factor and pixel array work method thereof |
| CN102420946B (en) * | 2011-11-10 | 2013-11-06 | 深港产学研基地 | CMOS image sensor pixel unit with high filling factor and pixel array work method thereof |
| CN102447851B (en) * | 2011-12-26 | 2014-07-30 | 深港产学研基地 | Dual complementary metal oxide semiconductor (CMOS) image sensor pixel unit with high filling factor, and working method |
| CN102447851A (en) * | 2011-12-26 | 2012-05-09 | 深港产学研基地 | Dual complementary metal oxide semiconductor (CMOS) image sensor pixel unit with high filling factor, and working method |
| CN102957880B (en) * | 2012-11-22 | 2015-08-05 | 北京思比科微电子技术股份有限公司 | A kind of method of active pixel, high dynamic range image sensor and operation active pixel |
| CN102957880A (en) * | 2012-11-22 | 2013-03-06 | 北京思比科微电子技术股份有限公司 | Active pixel, high-dynamic range image sensor and method for operating active pixel |
| CN105789202A (en) * | 2016-05-20 | 2016-07-20 | 京东方科技集团股份有限公司 | Active pixel sensor circuit, driving method and image sensor |
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| CN105789202B (en) * | 2016-05-20 | 2018-09-14 | 京东方科技集团股份有限公司 | Circuit for active pixel sensor, driving method and imaging sensor |
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| CN106375687A (en) * | 2016-07-07 | 2017-02-01 | 友达光电股份有限公司 | pixel sensing device and control method |
| CN106375687B (en) * | 2016-07-07 | 2019-05-10 | 友达光电股份有限公司 | pixel sensing device and control method |
| CN112333404A (en) * | 2020-11-17 | 2021-02-05 | 京东方科技集团股份有限公司 | Photosensitive unit, photosensitive device, driving method and display device |
| CN114323270A (en) * | 2021-12-23 | 2022-04-12 | 武汉华星光电半导体显示技术有限公司 | Active pixel sensor |
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