CN1790753A - Light-emitting diode and method of preparing the same - Google Patents
Light-emitting diode and method of preparing the same Download PDFInfo
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- CN1790753A CN1790753A CNA2004100895997A CN200410089599A CN1790753A CN 1790753 A CN1790753 A CN 1790753A CN A2004100895997 A CNA2004100895997 A CN A2004100895997A CN 200410089599 A CN200410089599 A CN 200410089599A CN 1790753 A CN1790753 A CN 1790753A
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- 238000000034 method Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- 238000001312 dry etching Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 25
- 239000000463 material Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a LED, which comprises: a sapphire substrate, a GaN buffer layer, an N/P-type GaN/ohmic contact layer, an InGaN/GaN quantum trap active layer, and a concentric P-type ohmic contact transparent electrode with grooves between near ring electrodes manufactured by dry etching. This invention makes even current injection, increases probability of side-surface light, reduces reflection angle, and thereby decreases greatly light energy loss.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially a kind of light-emitting diode based on the gallium nitride semiconductor material.The invention still further relates to a kind of preparation method of light-emitting diode.
Background technology
Semiconductor light-emitting-diode shows at panchromatic large-screen image, optical storage, and landmark identification reaches space communication under water, Medical Devices, fields such as the integrated and military surveillance of photoelectricity have widely uses.Particularly gallium nitrate based indigo plant, purple, and the ultraviolet light semiconductor light-emitting-diode can be used as the basic light source of white light pipe, have advantages such as energy-conservation, green, environmental protection.Be with a wide range of applications and great demand.
Semiconductor light-emitting-diode is to being positioned at the active layer injection current at P-N knot place, and is luminous by the radiation recombination in electronics and hole.Radiative wavelength is decided by the energy gap of active area materials.Aspect propagation, one of its key property is: semiconductor light-emitting-diode is luminous, and to belong to spontaneous radiation luminous, and the probability that the light that sends is propagated to the space all directions equates.Two of its key property is: the refractive index ratio of semi-conducting material is bigger, and the light that is sent all is to go out to inject optically thinner medium (air) by optically denser medium (as GaN), certainly exists the angle of total reflection of light like this, has limited the output of light.For blue wave band (460-480nm), refractive index is n=2.5 as the GaN material.The present GaN based light-emitting diode that generally adopts, the angle of emergence of its six faces can be calculated as shown in Figure 1 in view of the above, and the angle of total reflection of light is 23.6 degree, and light extraction efficiency is approximately 4%.Particularly for power-type LED, chip size expands 1 * 1mm to by 0.3 original * 0.3mm, even to more large scale development, thereby make light extraction efficiency lower.The power-type chip structure that generally uses is mainly the finger-inserting type structure, as shown in Figure 2 at present.Because its electrode is staggered structure, if deviation is arranged slightly when making, make its cross structure even inadequately, symmetrical, will cause current expansion insufficient, cause non-uniform light, and lighting area is little, there is angle of total reflection restriction, light extraction efficiency is low.
Summary of the invention
Technical problem to be solved by this invention provides a kind of novel light-emitting diode, by increasing lighting area, reduces the power loss of light-emitting diode owing to refractive index and total reflection generation, and improves the luminous efficiency of light-emitting diode.
For solving the problems of the technologies described above, a kind of light-emitting diode of the present invention, comprise Sapphire Substrate, GaN nucleating layer, GaN resilient coating, n type GaN ohmic contact layer, InGaN/GaN mqw active layer, p type AlGaN carrier barrier layer, p type GaN ohmic contact layer, p type ohmic contact transparency electrode, n type Ohm contact electrode and p type Ohm contact electrode, wherein, described p type Ohm contact electrode is a concentric structure, between the p type Ohm contact electrode of neighboring concentric circle structure ring-shaped groove is arranged.
For realizing above-mentioned light emitting diode construction, the preparation method of a kind of light-emitting diode of the present invention may further comprise the steps:
(1) epitaxial growth semiconductor light-emitting-diode wafer;
(2) etching n type step and deposit n type metallized multilayer film;
(3) alloying forms n type ohmic contact;
(4) deposit p type metallized multilayer film and alloying;
(5) with photoetching method mask pattern is transferred on the substrate;
Wherein, after above-mentioned steps, also comprise:
(6) dry etching forms the concentric structure electrode.
The present invention utilizes belt distribution of electrodes, has overcome the difficult problem that injection is inhomogeneous and expansion is not good of the electric current that conventional semiconductor light-emitting-diode faced effectively; At interelectrode belt groove, increased the probability of side bright dipping, avoided light to be absorbed by material own and electrode (comprising transparency electrode), and because of total reflection can not outgoing etc. drawback, thereby improved external quantum efficiency; Cyclic structure has reduced the angle of emergence of light effectively, has increased lighting area, and the wide part portion of side direction outgoing total reflection phenomenon can not occur with the outgoing of vertical side normal orientation, has improved light extraction efficiency.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is six light angles of emergence of light-emitting diode schematic diagram;
Fig. 2 is the finger-inserting type electrode structure schematic diagram of existing power type light-emitting diode chip;
Fig. 3 is a kind of electrode of light emitting diode structural representation of the present invention;
Fig. 4, Fig. 5, Fig. 6 are the sectional structure chart of a kind of light-emitting diode different depth of the present invention groove;
Fig. 7 is a kind of lumination of light emitting diode efficient of the present invention and gash depth graph of relation;
Fig. 8 is a kind of light-emitting diode forward voltage of the present invention and gash depth graph of relation;
Fig. 9 is a kind of light-emitting diode wavelength of the present invention and gash depth graph of relation;
Figure 10 is a kind of light-emitting diode reverse leakage current of the present invention and gash depth graph of relation.
Among the figure, 1.n type electrode; 2.p type electrode; 3. groove; 4. Sapphire Substrate; 5.GaN nucleating layer; 6.GaN resilient coating; 7.n type GaN ohmic contact layer; 8.InGaN/GaN mqw active layer; 9.p type AlGaN carrier barrier layer; 10.p type GaN ohmic contact layer; 11.p type ohmic contact transparency electrode; 12.p type Ohm contact electrode.
Embodiment
A kind of light-emitting diode of the present invention comprises Sapphire Substrate 4, GaN nucleating layer 5, GaN resilient coating 6, n type GaN ohmic contact layer 7, InGaN/GaN mqw active layer 8, p type AlGaN carrier barrier layer 9, p type GaN ohmic contact layer 10, p type ohmic contact transparency electrode 11, n type Ohm contact electrode 13, p type Ohm contact electrode 12.P type Ohm contact electrode 12 is concentric structures, as Fig. 3, in order to make full use of the luminous zone, is integrated with the p type Ohm contact electrode 12 of a plurality of concentric structures on same chip.12 of p type Ohm contact electrodes have groove 3, groove 3 has increased the probability and the lighting area of side bright dipping, avoided light to be absorbed by material own and electrode (comprising p type ohmic contact transparency electrode 11), cyclic structure has reduced the angle of emergence of light effectively, the wide part portion of side direction outgoing is with the outgoing of vertical side normal orientation, therefore overcome light because of total reflection can not outgoing etc. drawback, p type Ohm contact electrode 12 is the circular ring type spatial distribution, help electric current and evenly inject, thereby improve luminous efficiency.
In Fig. 4, Fig. 5, Fig. 6, its structure of light-emitting diode is respectively Sapphire Substrate 4, GaN nucleating layer 5, GaN resilient coating 6, n type GaN ohmic contact layer 7, InGaN/GaN mqw active layer 8, p type AlGaN carrier barrier layer 9, p type GaN ohmic contact layer 10, p type ohmic contact transparency electrode 11 from bottom to top.
As shown in Figure 4, the bottom of described groove 3 extends to p type ohmic contact layer 10.
As shown in Figure 5, the bottom of described groove 3 extends to p type AlGaN carrier confining layer 9.
As shown in Figure 6, the bottom of described groove 3 extends to n type GaN ohmic contact layer 7.
Different gash depths has certain influence to the performance of light-emitting diode.Fig. 7 has disclosed the relation of the luminous efficiency and groove 3 degree of depth, and wherein 02D6 and 18C3 operating current are 100mA, and the 28D5 operating current is 20mA.Before the channel bottom degree of depth was passed active layer, luminous efficiency increased with the increase of gash depth.
Fig. 8 has disclosed the relation of the forward voltage and groove 3 degree of depth, and wherein 02D6 and 18C3 operating current are 100mA, and the 28D5 operating current is 20mA.When channel bottom surpassed the degree of depth of n type ohmic contact layer, the forward operating voltage can increase along with the increase of gash depth.Forward voltage is constant substantially before this.
Fig. 9 has disclosed the relation of the emission wavelength and groove 3 degree of depth, and wherein 02D6 and 18C3 operating current are 100mA, and the 28D5 operating current is 20mA.The wavelength of lumination of light emitting diode remains unchanged when gash depth is deepened substantially.
Figure 10 has disclosed the relation of the reverse leakage current and groove 3 degree of depth, and wherein 02D6 and 18C3 operating current are 100mA, and the 28D5 operating current is 20mA.The reverse leakage current of lumination of light emitting diode remains unchanged when gash depth is deepened substantially.
For realizing above-mentioned light emitting diode construction, the preparation method of a kind of light-emitting diode of the present invention may further comprise the steps:
(1) epitaxial growth semiconductor light-emitting-diode wafer;
(2) etching n type step and deposit n type metallized multilayer film;
(3) alloying forms n type ohmic contact;
(4) deposit p type metallized multilayer film and alloying;
(5) with photoetching method mask pattern is transferred on the substrate;
Wherein, after above-mentioned steps, also comprise:
(6) dry etching forms concentric structure.
Claims (7)
1. light-emitting diode, comprise Sapphire Substrate, GaN nucleating layer, GaN resilient coating, n type GaN ohmic contact layer, InGaN/GaN mqw active layer, p type AlGaN carrier barrier layer, p type GaN ohmic contact layer, p type ohmic contact transparency electrode, n type Ohm contact electrode and p type Ohm contact electrode, it is characterized in that, described p type Ohm contact electrode is a concentric structure, between the p type Ohm contact electrode of neighboring concentric circle structure ring-shaped groove is arranged.
2. a kind of light-emitting diode according to claim 1 is characterized in that, is integrated with the p type Ohm contact electrode of a plurality of concentric structures on same chip.
3. a kind of light-emitting diode according to claim 1 is characterized in that, between adjacent concentric structure electrode groove is arranged, and this channel bottom extends to p type GaN ohmic contact layer.
4. a kind of light-emitting diode according to claim 1 is characterized in that, between adjacent concentric structure electrode groove is arranged, and this channel bottom extends to p type AlGaN carrier barrier layer.
5. a kind of light-emitting diode according to claim 1 is characterized in that, between adjacent concentric structure electrode groove is arranged, and this channel bottom extends to the InGaN/GaN active area.
6. a kind of light-emitting diode according to claim 1 is characterized in that, between adjacent concentric structure electrode groove is arranged, and this channel bottom extends to n type GaN ohmic contact layer.
7. the preparation method of utmost point pipe may further comprise the steps:
(1) epitaxial growth semiconductor light-emitting-diode wafer;
(2) etching n type step and deposit n type metallized multilayer film;
(3) alloying forms n type ohmic contact;
(4) deposit p type metallized multilayer film and alloying;
(5) with photoetching method mask pattern is transferred on the substrate;
It is characterized in that, after above-mentioned steps, also comprise:
(6) dry etching forms the concentric structure electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100895997A CN100459185C (en) | 2004-12-15 | 2004-12-15 | Light-emitting diode and method of preparing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100895997A CN100459185C (en) | 2004-12-15 | 2004-12-15 | Light-emitting diode and method of preparing the same |
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| Publication Number | Publication Date |
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| CN1790753A true CN1790753A (en) | 2006-06-21 |
| CN100459185C CN100459185C (en) | 2009-02-04 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008031339A1 (en) * | 2006-09-07 | 2008-03-20 | Hongkong Applied Science And Technology Research Institute Co., Ltd | Light emitting diode device, and manufacture and use thereof |
| WO2008052459A1 (en) * | 2006-10-30 | 2008-05-08 | Hong Kong Applied Science and Technology Research Institute Co. Ltd | Light emitting diode matrix |
| CN101685795B (en) * | 2008-09-22 | 2011-07-06 | 海立尔股份有限公司 | Method for manufacturing axially symmetrical light emitting diodes |
| US8207001B2 (en) | 2008-09-23 | 2012-06-26 | Helio Optoelectronic Corp. | Manufacturing method for an axially symmetric light-emitting diode assembly |
| CN102569587A (en) * | 2007-04-09 | 2012-07-11 | 晶元光电股份有限公司 | Light emitting semiconductor device possessing laminated transparent electrode |
| CN102637799A (en) * | 2011-02-12 | 2012-08-15 | 上海蓝光科技有限公司 | Light emitting diode (LED) chip structure |
| CN103296169A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103296152A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN105047783A (en) * | 2015-05-31 | 2015-11-11 | 厦门大学 | Nitride semiconductor light-emitting device and preparation method thereof |
| CN106025014A (en) * | 2016-07-29 | 2016-10-12 | 王汉清 | LED epitaxial wafer with current blocking layer and manufacturing method thereof |
| CN106057992A (en) * | 2016-07-29 | 2016-10-26 | 王汉清 | LED epitaxial wafer with current blocking layer and manufacturing method thereof |
| CN110783436A (en) * | 2019-11-08 | 2020-02-11 | 厦门乾照光电股份有限公司 | Large-size light-emitting diode with invisible extension electrode and manufacturing method |
| CN110911535A (en) * | 2019-11-20 | 2020-03-24 | 华南师范大学 | Visible light communication device based on branched annular electrode and preparation method thereof |
Families Citing this family (1)
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| US10868216B2 (en) | 2018-03-29 | 2020-12-15 | Kunshan New Flat Panel Display Technology Center Co., Ltd. | Display devices, light emitting diode chips and methods for manufacturing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61125092A (en) * | 1984-11-21 | 1986-06-12 | Nec Corp | Semiconductor light emitting diode |
| US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
| CN1218410C (en) * | 2002-01-14 | 2005-09-07 | 联铨科技股份有限公司 | Nitride LED with spiral metal electrode and its making process |
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- 2004-12-15 CN CNB2004100895997A patent/CN100459185C/en not_active Expired - Fee Related
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7800122B2 (en) | 2006-09-07 | 2010-09-21 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Light emitting diode device, and manufacture and use thereof |
| WO2008031339A1 (en) * | 2006-09-07 | 2008-03-20 | Hongkong Applied Science And Technology Research Institute Co., Ltd | Light emitting diode device, and manufacture and use thereof |
| WO2008052459A1 (en) * | 2006-10-30 | 2008-05-08 | Hong Kong Applied Science and Technology Research Institute Co. Ltd | Light emitting diode matrix |
| CN102569587A (en) * | 2007-04-09 | 2012-07-11 | 晶元光电股份有限公司 | Light emitting semiconductor device possessing laminated transparent electrode |
| CN102569587B (en) * | 2007-04-09 | 2015-09-16 | 晶元光电股份有限公司 | There is the semiconductor light-emitting apparatus of fold transparent electrode |
| CN101685795B (en) * | 2008-09-22 | 2011-07-06 | 海立尔股份有限公司 | Method for manufacturing axially symmetrical light emitting diodes |
| US8207001B2 (en) | 2008-09-23 | 2012-06-26 | Helio Optoelectronic Corp. | Manufacturing method for an axially symmetric light-emitting diode assembly |
| CN102637799B (en) * | 2011-02-12 | 2015-01-28 | 上海蓝光科技有限公司 | Light emitting diode (LED) chip structure |
| CN102637799A (en) * | 2011-02-12 | 2012-08-15 | 上海蓝光科技有限公司 | Light emitting diode (LED) chip structure |
| CN103296152A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103296169A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103296152B (en) * | 2012-03-01 | 2016-07-27 | 上海蓝光科技有限公司 | A kind of light emitting diode and manufacture method thereof |
| CN105047783A (en) * | 2015-05-31 | 2015-11-11 | 厦门大学 | Nitride semiconductor light-emitting device and preparation method thereof |
| CN105047783B (en) * | 2015-05-31 | 2018-04-13 | 厦门大学 | A kind of nitride semiconductor photogenerator and preparation method thereof |
| CN106025014A (en) * | 2016-07-29 | 2016-10-12 | 王汉清 | LED epitaxial wafer with current blocking layer and manufacturing method thereof |
| CN106057992A (en) * | 2016-07-29 | 2016-10-26 | 王汉清 | LED epitaxial wafer with current blocking layer and manufacturing method thereof |
| CN110783436A (en) * | 2019-11-08 | 2020-02-11 | 厦门乾照光电股份有限公司 | Large-size light-emitting diode with invisible extension electrode and manufacturing method |
| CN110783436B (en) * | 2019-11-08 | 2020-11-24 | 厦门乾照光电股份有限公司 | Large-size light-emitting diode with invisible extension electrode and manufacturing method |
| CN110911535A (en) * | 2019-11-20 | 2020-03-24 | 华南师范大学 | Visible light communication device based on branched annular electrode and preparation method thereof |
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| Publication number | Publication date |
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| CN100459185C (en) | 2009-02-04 |
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