CN1784084A - Microphone and its producing method - Google Patents
Microphone and its producing method Download PDFInfo
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- CN1784084A CN1784084A CN 200410096665 CN200410096665A CN1784084A CN 1784084 A CN1784084 A CN 1784084A CN 200410096665 CN200410096665 CN 200410096665 CN 200410096665 A CN200410096665 A CN 200410096665A CN 1784084 A CN1784084 A CN 1784084A
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Abstract
This invention relates to microphone and making method, which contains burying field-effect transistor in concave groove of substrate, in turn connecting back board and capacitance diaphragm chip with substrate, forming vibration space and chamber, packaged by shell to obtain said microphone. Said invention is a capacitance microphone between single chip capacitance diaphragm microphone and double chips capacitance diaphragm chip microphone.
Description
Technical field
The invention relates to a kind of microphone and manufacture method thereof, be meant a kind of capacitive microphone and manufacture method thereof especially.
Background technology
Because the development trend of electronic product is to develop toward frivolous, the small and exquisite direction of volume always, the development of microphone is no exception certainly.And at present, to encapsulate the capacitive microphone that condenser type vibrating diaphragm chip forms, because the condenser type vibrating diaphragm chip that is used to respond to acoustic energy and the acoustic energy of induction is converted to capacitance variations, the development step of its microminiaturization can be along with micro electronmechanical process technique, manufacture of semiconductor development of technology and therefore synchronized development becomes main development object.
Present condenser type vibrating diaphragm chip can be divided into two kinds of single-chip formula and twin-core chips.The condenser type vibrating diaphragm chip of single-chip formula is used the manufacture of semiconductor preparation of most roads and is formed as the term suggests be with single base material chip; The condenser type vibrating diaphragm chip of twin-core chip then is to use the manufacture of semiconductor preparation of most roads to form " backboard chip " and " corresponding vibrating diaphragm chip " respectively, again two chips incorporate (bonding) are become condenser type vibrating diaphragm chip, and in combination, required " air chamber " and " oscillation space " when forming the microphone start jointly with corresponding vibrating diaphragm chip by the backboard chip.
No matter be the condenser type vibrating diaphragm chip of single-chip formula or twin-core chip, inevasible shortcoming is in its processing procedure, must carry out the body etch process, and then form " vibrating diaphragm " and " air chamber " of microphone indispensability, and the etched part of need body is many more, its process is long more, also difficult more control, process rate is also just low more, and therefore, reducing needs the etched part of body, shorten the required processing procedure time cost of body etching, be single-chip formula or twin-core chip condenser type vibrating diaphragm chip improve research direction.
In addition, the condenser type vibrating diaphragm chip of twin-core chip in the process of preparation, combine (bonding) of chip and chip, still belong at present be difficult for controlling and genus yield technology processing procedure on the low side one, also be the improved direction of dealer's primary study.
Therefore, how improving the etched process rate of body, or improve the chips incorporate process rate, or fundamentally propose the microphone that the condenser type vibrating diaphragm chip of other form of encapsulation forms, is the target of industry, educational circles effort always.
Summary of the invention
Therefore, purpose of the present invention, the i.e. microphone that forms at the vibrating diaphragm chip that provides a kind of encapsulation between single-chip formula and twin-core sheet capacitor formula vibrating diaphragm chip, and the manufacture method of this kind microphone.
So the manufacture method of a kind of microphone of the present invention comprises following steps.
(a) preparation one substrate makes this substrate have a surface, a bottom surface, is located in the circuit layout between this surface, the bottom surface, and one from this surface to the groove of this bottom surface direction depression.
(b) field-effect transistor is attached in this groove accordingly, and forms predetermined the electrical connection with this circuit layout.
(c) with a backboard with plurality of through holes with those perforation corresponding to this groove be linked to this surface.
(d) a vibrating diaphragm chip with a vibrating diaphragm is connected with this backboard separately and corresponding to those perforation ground with this vibrating diaphragm.
(e) can be connected corresponding to this vibrating diaphragm ground and this substrate for the case of acoustic energy break-through one, the bottom surface that makes this case and this substrate is jointly with this vibrating diaphragm chip, this backboard, this field-effect transistor, seals appearance with this substrate and is isolated with the external world.
In addition,, comprise a substrate, a field-effect transistor, a backboard, a vibrating diaphragm chip with the made microphone of above-mentioned manufacture method, and a case.
This substrate has lateral circle surface, that a surface, a bottom surface, one link this surface and this bottom surface and is folded in circuit layout between this surface and the bottom surface, and one from this surface to the groove of this bottom surface direction formation.
This field-effect transistor, binding are fixed in this groove and with this circuit layout formation and are electrically connected the embedding remaining space formation-air chamber that this field-effect transistor is arranged of this groove.
This backboard is formed by conductor material, has the perforation that plural number forms predetermined image, is connected with the surface of this plurality of through holes corresponding to this groove ground and this substrate, is electrically connected accordingly with this circuit layout simultaneously.
This vibrating diaphragm chip has an electrode layer, one electret layer, one folder is connected in the vibrating diaphragm between this electrode layer and this electret layer, and one from this electret layer to the separating element that forms in contrast to this electrode layer direction, this electrode layer forms with electric conducting material, this electret layer is with electret formation and have electric charge, this vibrating diaphragm forms with insulating material, and can respond to acoustic energy and corresponding deformation, this vibrating diaphragm unit is connected with this separating element and this backboard, make this electret layer, the common oscillation space that forms of this separating element and this backboard, this oscillation space is connected and this vibrating diaphragm deformation of confession this electrode layer with the plurality of through holes of this backboard with this air chamber, this electret layer and the common formation of this backboard can be to the electric capacity of should vibrating diaphragm deformation and changing.
This case can supply the acoustic energy break-through, and this vibrating diaphragm chip is connected the lateral circle surface that this vibrating diaphragm chip, this backboard, this field-effect transistor and this substrate cover cover back and this substrate to this orientation substrate certainly.
Effect of the present invention is to provide a kind of condenser type vibrating diaphragm chip and capacitive microphone of forming of the vibrating diaphragm Chip Packaging between the condenser type vibrating diaphragm chip of twin-core chip between the single-chip formula, to improve the overall process yield, to reduce production costs.
Description of drawings
Fig. 1 is a cross-sectional schematic, and a preferred embodiment of microphone of the present invention is described.
Fig. 2 is a flow chart, the preparation process of a backboard of the microphone of key diagram 1.
Fig. 3 is a flow chart, and when a vibrating diaphragm chip of the microphone for preparing Fig. 1 was described, its preparation process 31 was to the process of step 34.
Fig. 4 is a flow chart, and the preparation process of continuity Fig. 3 is described, the subsequent step 35 of preparation vibrating diaphragm chip is to the process of step 38.
Fig. 5 is a flow chart, and the process of making as the microphone of Fig. 1 is described.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples:
Consult Fig. 1, a preferred embodiment of microphone of the present invention is used for follow-up computing in order to respond to acoustic energy and to convert the acoustic energy of responding to electronic signal.
Microphone 1 comprises a substrate 11, a field-effect transistor 12 (FET), a backboard 13, a vibrating diaphragm chip 14, and a case 15.
The lateral circle surface 113, one that substrate 11 has a surface 111, a bottom surface 112, a connected surfaces 111 and a bottom surface 112 be located in circuit layout 114, between surface 111 and the bottom surface 112 from the surface 111 groove 115, one first Power Ports 116 that form downwards, reach second Power Port 117 that is laid in bottom surface 112.
Field-effect transistor 12 links accordingly and is fixed in the groove 115, and forms and be electrically connected with the weld pad of first Power Port 116 on being laid in the side face that forms groove 115, in order to the capacitance variations corresponding conversion is become electronic signal.
Vibrating diaphragm chip 14 has the electret layer 143 that electrode layer 142, that a vibrating diaphragm 141, is formed on vibrating diaphragm 141 upper surfaces is formed on vibrating diaphragm 141 lower surfaces, and one by the more downward separating element that forms 145 of vibrating diaphragm 141 peripheries.
Separating element 145 is practised the resistance materials such as SU-8 that claim with for example silicon dioxide, BCB (benzocyclobutene), SINR, polyimide or industry, forms downwards from electret layer 143 bottom surfaces.
Vibrating diaphragm chip 14 is with the plurality of through holes 131 of vibrating diaphragm 141 corresponding to backboard 13, and mat separating element 145 storehouses are attached on the backboard 13, by the common oscillation space 17 that utilizes the plurality of through holes 131 of backboard 13 to be connected that forms of separating element 145, vibrating diaphragm 141 bottom surfaces and backboard 13 with air chamber 16, make the vibrating diaphragm 141 can be in response to the acoustic energy free deformation of sensing, simultaneously, electrode layer 142, electret layer 143 and backboard 13 common formation can corresponding vibrating diaphragm 141 deformation and the electric capacity that changes.
After the acoustic energy in the external world penetrated the transparent walls 152 of case 15, affact the vibrating diaphragm 141 of vibrating diaphragm chip 14, therefore vibrating diaphragm 141 produces deformation accordingly, and the backboard 13 and the spacing of vibrating diaphragm 141 are changed, electrode layer 142, electret layer 143 are produced change with the backboard 13 common electric capacity that form, field-effect transistor 12 converts capacitance variations to electronic signal again, uses for follow-up electronic product computing.
Above-mentioned microphone 1 is cooperating as shown in Figure 2 about backboard 13, Fig. 3 and Fig. 4 detailed methods of fabrication about vibrating diaphragm chip 14, and after the procedure declaration that overall package is made as shown in Figure 5, when can more clearly understanding.
Consult Fig. 2 earlier, the backboard 13 of above-mentioned microphone 1, be earlier with step 21 on silicon substrate 51 for example, be that material forms a separating layer 52 with aluminium.
Then carry out step 22, on separating layer 52 with photoresistance form have a predetermined image cover layer 53.This image that covers layer 53 is the distributing position aspect corresponding to the plurality of through holes 131 of backboard 13, and thickness is thicker, belongs to the alleged thick photoresist layer of general industry, and thickness is greatly about 60～100 μ m.
Carry out step 23 then, self-separation layer 52 is not covered layer 53 zone that covers, and is that material is upwards electroplated and formed thickness to cover layer thin with nickel, is about the thick metal level 54 of 50 μ m.
Then carry out step 24, etching removes and covers layer 53, makes that simultaneously the zone that is covered layer 53 separating layer that is covered 52 is exposed, this moment metal level 54 because of cover layer be removed mold most corresponding to boring a hole 131 holes 55.
Carry out step 25 at last, the subregion of the separating layer 52 that exposes certainly begins etch separates layer 52, and after removing separating layer 52 fully, metal level 54 promptly separates with base material 51, and isolated metal level 54 is backboard 13.
Consult Fig. 3, Fig. 4, above-mentioned vibrating diaphragm chip 14 is earlier with step 31, on two opposite surfaces of silicon substrate 61, is respectively that material film deposits one first silicon oxide film 62 and one second silicon oxide film 63 with the silica earlier.
Then carry out step 32, with the silicon nitride is material, thin film deposition goes out first and second silicon nitride film 64,65 respectively on first and second silicon oxide film 62,63, the thin layer that subsequent etch is handled is treated in first silicon oxide film 62 and the 64 common formation one of first silicon nitride film, and second silicon oxide film 63 and second silicon nitride film 65 form the vibrating diaphragm layers jointly and then become vibrating diaphragm 141.
Carry out step 33 then, etching removes first silicon nitride film 64 of thin layer and the subregion of first silicon oxide film, 62 central squarelys, makes the silicon substrate 61 of corresponding region exposed, 61 one-tenth one frame type aspects of first silicon nitride film 64 and first silicon oxide film of retention.
Then carry out step 34, the silicon substrate 61 that exposes from correspondence continues downward etching and removes silicon substrate 61, up to silicon substrate 61 being molded into a frame shape, and makes that the corresponding region of second silicon oxide film 63 of corresponding below is exposed.
Second silicon oxide film 63, second silicon nitride film, the 65 common vibrating diaphragms 141 that form that correspondence exposes.
With step 35, form the electrode layer 142 that the cross section slightly becomes the U font at second silicon oxide film 63 that exposes with the silicon substrate of retaining 61, first silicon oxide film 62, first silicon nitride film, 64 plating then with metal.
Then carry out step 36, on second silicon oxide film 65, form electret layer 143 with electret.
Carry out step 37 again, form separating element 145 downwards from electret layer 143 peripheries, finish the hardware construction of vibrating diaphragm chip 14 with photoresistance.
Carry out step 38 at last, the charging lotus makes it electrically charged on electret layer 143, finishes the preparation of vibrating diaphragm chip 14.
Because above steps is all used the micro electronmechanical process technique of standard and is carried out, so omit some detailed implementation details in illustrating, when for example etching removes first silicon nitride film 64 of specific region and first silicon oxide film 62, must for example design light shield earlier, after photoresistance, exposure on first silicon nitride film 64, the predetermined mask of developing, just can actually carry out etching, after etching is finished, still needing to shield etching again washes ... or the like, because these details have been the known technological means of industry, and non-emphasis of the present invention place, forgiving to go to live in the household of one's in-laws on getting married releases.
After above-mentioned backboard 13, vibrating diaphragm chip 14 are finished in preparation, can carry out microphone shown in Figure 11 encapsulation and make.
Consult Fig. 5, at first carry out step 41, prepare above-mentioned substrate 11 with groove 115.
With step 42, field-effect transistor 12 is electrically connected and is fixedly linked in the groove 115 then.
Then carry out step 43, backboard 13 131 is attached at substrate 11 surfaces 111 corresponding to groove 115 ground storehouses to bore a hole.
Carry out step 44 again, vibrating diaphragm chip 14 is attached on the backboard 13 with perforation 131 ground of vibrating diaphragm 141 corresponding to backboard 13.
Carry out step 45 at last, case 15 cover is covered vibrating diaphragm chip 14, backboard 13, and be connected, promptly finish the preparation of microphone 1 with the lateral circle surface 113 of substrate 11.
What this will be illustrated be, above-mentioned backboard 13 is to utilize aluminium treat etched separating layer 52 for material forms, and collocation nickel is that material forms metal level 54 and prepares and draw.In fact, in the process of preparation, for example can adopting, nickel, copper, gold etc. are the predetermined material that forms backboard 13, the material of the effect of not interacting in the collocation etching process, metal such as aluminium, titanium for example, or macromolecular materials such as silicon dioxide, photoresistance, PI treat etched separating layer 52 for predetermined formation, and preparation draws the backboard 13 of predetermined material.
In addition, the thin layer of above-mentioned vibrating diaphragm chip 14, vibrating diaphragm layer all are to form the example explanation jointly with silicon oxide film and silicon nitride film, yet, generally in order to save processing procedure, material, the vibrating diaphragm layer can be single silicon nitride film or silicon oxide film, or other material that can insulate forms single rete, constitutes the formed vibrating diaphragm 141 of single rete; In addition, in order to produce different deformation in response to induction behind the acoustic energy and then to cause the demand of different capacitance variations, the flat vibrating diaphragm fabrication steps of above-mentioned formation, can also be pre-formed the fold image on a surface of base material in advance, deposition forms the vibrating diaphragm layer again, after proceeding subsequent step, can draw the vibrating diaphragm chip that vibrating diaphragm becomes to have the fold vibrating diaphragm of predetermined fold image in final preparation, because these processing procedure variations in detail, only be the variation of the micro electronmechanical processing procedure of application standard, forgive and to be described in detail one by one at this.
Moreover, the assembling preparation process of microphone 1, must be implemented in regular turn according to step as described in Figure 5, can also be at completing steps 41 with after step 42 be electrically connected and be fixedly linked on field-effect transistor 12 in the groove 115, elder generation banks up vibrating diaphragm chip 14 in the case 15, again in regular turn with backboard 13, the substrate 11 that is embedded with field-effect transistor 12 is banked up into case 15, and the lateral circle surface 113 of substrate 11 is connected with case 15, and finish the preparation of microphone 1, because the variation of these implementation step orders, visual actual needs and adjust changing is to some extent no longer added to give unnecessary details for example at this.
As shown in the above description, the present invention utilizes to electroplate to prepare backboard 13, cooperate and improve the structure of the condenser type vibrating diaphragm chip of single-chip formula traditionally, prepare neither belong to the condenser type vibrating diaphragm chip of traditional single-chip formula, the vibrating diaphragm chip 14 of the condenser type vibrating diaphragm chip of also non-twin-core chip, substrate 11 in collocation can be embedded in field-effect transistor 12 again cooperates the back encapsulation to prepare microphone 1.Because the backboard 13 of microphone 1 of the present invention is not to form air chamber with long-time etching, simultaneously, the also process of chipless combination, therefore can effectively promote process rate, reduce production costs, in addition, with regard to the processing procedure of backboard 13, because base material 51 can be reused, the advantage that reduces consumables cost is also arranged, reach creation purpose of the present invention really.
Claims (12)
1. the manufacture method of a microphone, it is characterized in that: this manufacture method comprises
(a) preparation one substrate makes this substrate have a surface, a bottom surface, is located in the circuit layout between this surface, the bottom surface, and one from this surface to the groove of this bottom surface direction depression;
(b) field-effect transistor is attached in this groove accordingly, and forms predetermined the electrical connection with this circuit layout;
(c) with a backboard with plurality of through holes with those perforation corresponding to this groove be linked to this surface;
(d) with one with vibrating diaphragm induction acoustic energy and convert the vibrating diaphragm chip of capacitance variations to, be connected in this backboard ground and this backboard separately with this vibrating diaphragm; And
(e) can be with one for the case of acoustic energy break-through, this vibrating diaphragm chip is to this orientation substrate certainly, with this vibrating diaphragm chip, this backboard, this is embedded in the field-effect transistor in this groove and this substrate cover covers and be connected with a lateral circle surface of this substrate.
2. the manufacture method of microphone according to claim 1 is characterized in that: the prepared substrate of this step (a) has more first Power Port that is arranged at this bottom surface and corresponding electrical connection with this circuit layout, is used to be electrically connected to a circuit board.
3. the manufacture method of microphone according to claim 1 is characterized in that: the prepared substrate of this step (a) has more second Power Port that is arranged at this surface and corresponding electrical connection with this circuit layout, is used to be electrically connected this field-effect transistor and this backboard.
4. the manufacture method of microphone according to claim 1, it is characterized in that: the backboard of this step (c) is to be prepared by the following step:
(c1) on a base material, form a separating layer;
(c2) on this separating layer, form a layer that covers with predetermined image;
(c3) this separating layer is not covered the zone that covers of layer by this and upwards forms a thickness and cover the thin metal level of layer than this certainly;
(c4) remove this and cover layer, make by this zone that covers the separating layer that covered of layer exposed; And
The subregion of the separating layer that (c5) exposes certainly begins etching this separating layer is removed, and this metal level is separated with this base material.
5. as the manufacture method of microphone as described in the claim 4, it is characterized in that: this metal level is to form with plating mode.
6. the manufacture method of microphone according to claim 1, it is characterized in that: the vibrating diaphragm chip of this step (d) is to be prepared by the following step
(d1) on the opposite two sides of a base material, thin film deposition goes out a thin layer and a vibrating diaphragm layer respectively;
(d2) remove a middle body zone of this thin layer, make the zone of this base material correspondence exposed annularly and make the thin layer of retention be one;
(d3) to remove this base material downwards exposed up to the zone of this vibrating diaphragm layer correspondence the exposed corresponding region of this base material certainly;
(d4) on the thin layer of retaining, base material that correspondence exposes and vibrating diaphragm layer, form an electrode layer with conductor material;
(d5) form an electret layer in contrast to being formed with this electrode layer bottom surface with electret at this vibrating diaphragm layer;
(d6) certainly this electret layer form a separating element downwards corresponding to the periphery that has this base material to retain; And
(d7) the charging lotus makes it charged on this electret layer.
7. the manufacture method of microphone according to claim 1, it is characterized in that: the vibrating diaphragm chip of this step (d) is to be prepared by the following step
(d1) on a bottom surface of a base material, define predetermined image, make this bottom surface become a wrinkled surface;
(d2) at the wrinkled surface of this base material and on a surface of this wrinkled surface, thin film deposition goes out a vibrating diaphragm layer and a thin layer respectively;
(d3) remove a middle body zone of this thin layer, make the zone of this base material correspondence exposed annularly and make the thin layer of retention be one;
(d4) to remove this base material downwards exposed up to the zone of this vibrating diaphragm layer correspondence the corresponding region that exposes of this silicon substrate certainly;
(d5) on the thin layer of retaining, base material that correspondence exposes and vibrating diaphragm layer, form an electrode layer with conductor material;
(d6) form an electret layer in contrast to a bottom surface that is formed with this electrode layer with electret at this vibrating diaphragm layer;
(d7) certainly this electret layer form a separating element downwards corresponding to the periphery that has this base material to retain; And
(d8) the charging lotus makes it charged on this electret layer.
8. microphone, it is characterized in that: this microphone comprises
One substrate has lateral circle surface, that a surface, a bottom surface, one link this surface and this bottom surface and is folded in circuit layout between this surface and the bottom surface, and one from this surface to the groove of this bottom surface direction formation;
One field-effect transistor, binding are fixed in this groove and with this circuit layout formation and are electrically connected, and this groove is embedding to have the remaining space of this field-effect transistor to form an air chamber;
One backboard that is formed by conductor material has the perforation that plural number forms predetermined image, is connected with the surface of this plurality of through holes corresponding to this groove ground and this substrate, and the while is electrically connected accordingly with this circuit layout;
One vibrating diaphragm chip, has an electrode layer, one electret layer, one folder is connected in the vibrating diaphragm between this electrode layer and this electret layer, and one from this electret layer to the separating element that forms in contrast to this electrode layer direction, this electrode layer forms with electric conducting material, this electret layer is with electret formation and have electric charge, this vibrating diaphragm forms with insulating material, and can respond to acoustic energy and corresponding deformation, this vibrating diaphragm unit is connected with this separating element and this backboard, make this electret layer, the common oscillation space that forms of this separating element and this backboard, this oscillation space is connected and this vibrating diaphragm deformation of confession this electrode layer with the plurality of through holes of this backboard with this air chamber, this electret layer and the common formation of this backboard can be to the electric capacity of should vibrating diaphragm deformation and changing; And
One can be for the case of acoustic energy break-through, and this vibrating diaphragm chip is connected the lateral circle surface that this vibrating diaphragm chip, this backboard, this field-effect transistor and this substrate cover cover back and this substrate to this orientation substrate certainly.
9. as microphone as described in the claim 8, it is characterized in that: the thickness of this backboard is between 20～100 μ m.
10. as microphone as described in claim 8 or 9, it is characterized in that: this backboard is that to be selected from the following group that constitutes be that material is electroplated and formed: nickel, copper, gold, and these combination.
11. as microphone as described in the claim 8, it is characterized in that: this case has the binding wall of an annular, and one link with this that wall links and can be for the transparent walls of acoustic energy break-through, this binding wall and this transparent walls define an envelope with an opening jointly and put the space, this case covers to this orientation substrate cover from this vibrating diaphragm chip with this opening, put in the space and this vibrating diaphragm chip, this backboard, this field-effect transistor and this substrate are placed in this envelope, and be connected simultaneously and then seal this opening with this substrate with the lateral circle surface of this bindings wall inner peripheral surface and this substrate.
12. as microphone as described in the claim 11, it is characterized in that: this binding wall conducts with ground connection mutually with this electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410096665 CN1784084B (en) | 2004-12-03 | 2004-12-03 | Microphone and its producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410096665 CN1784084B (en) | 2004-12-03 | 2004-12-03 | Microphone and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1784084A true CN1784084A (en) | 2006-06-07 |
| CN1784084B CN1784084B (en) | 2010-05-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410096665 Expired - Fee Related CN1784084B (en) | 2004-12-03 | 2004-12-03 | Microphone and its producing method |
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| Country | Link |
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| CN (1) | CN1784084B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010081347A1 (en) * | 2009-01-19 | 2010-07-22 | 歌尔声学股份有限公司 | Insulating plate for a condenser microphone and a condenser microphone for using the insulating plate |
| CN101279709B (en) * | 2007-04-04 | 2011-01-19 | 财团法人工业技术研究院 | Multi-layer type encapsulation structure of minisize acoustic sensor |
| CN101150888B (en) * | 2007-10-31 | 2011-03-30 | 日月光半导体制造股份有限公司 | Encapsulation structure and its encapsulation method for computer electric microphone |
| CN101150886B (en) * | 2006-09-21 | 2011-07-13 | 财团法人工业技术研究院 | Encapsulation structure and its encapsulation method for computer electric microphone |
| CN101102622B (en) * | 2006-07-07 | 2011-12-14 | 欧力天工股份有限公司 | Making method for vibration film assembly and capacitance microphone |
| CN104754853A (en) * | 2013-12-30 | 2015-07-01 | 富葵精密组件(深圳)有限公司 | Circuit board with sound collecting hole and manufacturing method thereof |
| CN109302665A (en) * | 2017-07-25 | 2019-02-01 | 中芯国际集成电路制造（天津）有限公司 | MEMS microphone and forming method thereof |
| CN111200779A (en) * | 2019-12-18 | 2020-05-26 | 歌尔微电子有限公司 | Electret microphone and electronic device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002232982A (en) * | 2001-01-30 | 2002-08-16 | Sanyo Electric Co Ltd | Speaker system |
| CN100446628C (en) * | 2002-12-02 | 2008-12-24 | 佳乐电子股份有限公司 | Capacitor type microphone and micro-electromechanical processing and manufacturing method thereof |
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2004
- 2004-12-03 CN CN 200410096665 patent/CN1784084B/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101102622B (en) * | 2006-07-07 | 2011-12-14 | 欧力天工股份有限公司 | Making method for vibration film assembly and capacitance microphone |
| CN101150886B (en) * | 2006-09-21 | 2011-07-13 | 财团法人工业技术研究院 | Encapsulation structure and its encapsulation method for computer electric microphone |
| CN101279709B (en) * | 2007-04-04 | 2011-01-19 | 财团法人工业技术研究院 | Multi-layer type encapsulation structure of minisize acoustic sensor |
| CN101150888B (en) * | 2007-10-31 | 2011-03-30 | 日月光半导体制造股份有限公司 | Encapsulation structure and its encapsulation method for computer electric microphone |
| US8654996B2 (en) * | 2009-01-19 | 2014-02-18 | Goertek Inc. | Spacer for a capacitive microphone and capacitive microphone with the same |
| US20110274300A1 (en) * | 2009-01-19 | 2011-11-10 | Rongguo Yao | Spacer for a capacitive microphone and capacitive microphone with the same |
| WO2010081347A1 (en) * | 2009-01-19 | 2010-07-22 | 歌尔声学股份有限公司 | Insulating plate for a condenser microphone and a condenser microphone for using the insulating plate |
| CN104754853A (en) * | 2013-12-30 | 2015-07-01 | 富葵精密组件(深圳)有限公司 | Circuit board with sound collecting hole and manufacturing method thereof |
| CN104754853B (en) * | 2013-12-30 | 2017-11-24 | 鹏鼎控股(深圳)股份有限公司 | Circuit board with MIC and preparation method thereof |
| CN109302665A (en) * | 2017-07-25 | 2019-02-01 | 中芯国际集成电路制造（天津）有限公司 | MEMS microphone and forming method thereof |
| CN109302665B (en) * | 2017-07-25 | 2020-09-25 | 中芯国际集成电路制造（天津）有限公司 | MEMS microphone and forming method thereof |
| CN111200779A (en) * | 2019-12-18 | 2020-05-26 | 歌尔微电子有限公司 | Electret microphone and electronic device |
| CN111200779B (en) * | 2019-12-18 | 2021-11-26 | 歌尔微电子有限公司 | Electret microphone and electronic device |
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| Publication number | Publication date |
|---|---|
| CN1784084B (en) | 2010-05-26 |
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