CN1780001A - Semiconductor light emitting device and production thereof - Google Patents
Semiconductor light emitting device and production thereof Download PDFInfo
- Publication number
- CN1780001A CN1780001A CNA2004100904591A CN200410090459A CN1780001A CN 1780001 A CN1780001 A CN 1780001A CN A2004100904591 A CNA2004100904591 A CN A2004100904591A CN 200410090459 A CN200410090459 A CN 200410090459A CN 1780001 A CN1780001 A CN 1780001A
- Authority
- CN
- China
- Prior art keywords
- barrier rib
- epitaxial loayer
- semiconductor light
- emitting elements
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
A luminescent semiconductor element for the high-power blue or green LED is prepared through plating a barrier wall outside the first electrode and part of reflecting layer, electroplating a metallic post in the region except the barrier wall, using excimer laser to radiate the sapphire substrate to separate is from semiconductor buffer layer, and etching the surface of the first electroconductive epitaxial layer for roughening it. Its advantages are high heat dissipating effect and high brightness.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements and preparation method thereof, particularly a kind of manufacture method and structure that makes element itself have good thermal diffusivity and can promote brightness.
Background technology
InGaN (InGaN) series material has direct gap (direct bandgap, E at ultraviolet light wave band and blue green light wave band
g), therefore can be used as high efficiency white light and visible light source.Commercial at present product has indigo plant, green, ultraviolet light and white light emitting diode, and the laser diode of royal purple optical band.But, how to promote the brightness of light-emitting diode, be very important problem in this research and development field always, the brightness of element can't infinitely increase along with the increase of electric current in principle, but is subject to the factor of element saturation current.
In influencing brightness all multifactor, the thermal diffusivity of size of component and element is playing a part crucial.If element itself has good thermal diffusivity, not only can increase useful life, also its application can be extended in the product of paramount electric current demand.
Disclosed a kind of light-emitting diode and method for making thereof of cohering the reflector that have in " the having the light-emitting diode and the method for making thereof of cohering the reflector " that No. the 567618th, TaiWan, China patent gazette notification number.By a transparent gluing layer one light-emitting diode and a metallic reflector are bonded together, can be used to improve the brightness of light-emitting diode.
In addition, disclosed a kind of surface in " with the semiconductor component surfaces alligatoring to promote the method for external quantum efficiency " of No. the 472400th, the applicant's TaiWan, China patent gazette notification number through the control growing temperature and the semiconductor light-emitting elements of the compound of alligatoring.For the light-emitting component of aluminum indium nitride gallium series, the effect that this invention obtains can promote brightness more than 40% with respect to control group.
Disclosed the light-emitting diode that a kind of mode of utilizing melts combine forms high brightness again in " the INXALYGAZNOPTICAL EMITTERS FABRICATED VIA SUBSTRATEREMOVAL " of No. the 2001/0042866th, Application No., it utilizes a metallic reflector to reflect the light that active layer produces, thereby has avoided the problem of substrate extinction; And utilize the metal gluing layer that the LED epitaxial layer is adhered on the good substrate of a thermal diffusivity, as, on silicon (Si) and the metal substrate, and significantly improve the heat dissipation characteristics of light-emitting diode, but this method, the production qualification rate higher as need, then must make must in conjunction with the LED epitaxial chip and both surfaces of good substrate of dispelling the heat all very smooth, but the LED epitaxial chip surface has protrusion or particle usually, and the extension chip is normally crooked, thereby makes the combination difficulty of chip.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the defective that above-mentioned prior art exists, a kind of semiconductor light-emitting elements and method for making thereof with good thermal diffusivity is provided, because element itself has good thermal diffusivity, is applied in the light-emitting diode of high electric current demand being more suitable for.
Another technical problem that the present invention will solve is to provide a kind of semiconductor light-emitting elements of promoting brightness that has, especially at being the semiconductor light-emitting elements of substrate with the sapphire.
For achieving the above object, to the InGaN series material high power blueness and the green LED of use sapphire substrates, and the element crystal grain after forming, be the light-emitting component of flip chip (flip-chip) form that penetrates from the front.Light-emitting component at sapphire substrates, the tool P/N that grows up thereon connects the LED epitaxial layer of face, comprise at least one first conductivity epitaxial loayer, one luminous active layer, one second conductivity epitaxial loayer, one ohmic contact layer, its processing procedure is to form the semiconductor resilient coating earlier, form the stack architecture of aforementioned necessity again, an and reflector, with one first electrode, be positioned at the part that the first conductivity epitaxial loayer of aforementioned stack architecture exposes, the invention is characterized in that this first electrode is overseas with the reflector region of part, plating a thickness is that 50 to 100 μ m are as the barrier rib that intercepts usefulness, on the zone of aforementioned non-barrier rib, form a metal column that is not less than this thickness of barrier wall with plating mode again, utilize an excimer laser uniform irradiation at last on sapphire substrates, impel sapphire substrates to break away from this semiconductor buffer layer; Further corrode this first conductivity epi-layer surface, impel this first conductivity epi-layer surface to form coarse format surface with etch.
Finish a structure like this and from top to bottom be in regular turn a surface and conduct electricity epitaxial loayer, an ohmic contact layer, a reflector for the first conductivity epitaxial loayer of matsurface, a luminous active layer, one second, and one first electrode, this first electrode is positioned at the part that the first conductivity epitaxial loayer of aforementioned stack architecture exposes, one barrier rib is positioned at this first electrode and the overseas below of reflector region partly, and a metal column is formed at the zone of aforementioned non-barrier rib.
The heat conduction good metal post that forms by this plating mode can make the conductive electrode of the semiconductor light-emitting elements after encapsulating have good thermal diffusivity, high power blueness and green LED for the big electric current of need will make element itself have good thermal diffusivity, will be more suitable for being applied in the light-emitting diode of high electric current demand; Simultaneously, this surface forms the first conductivity epitaxial loayer of rough surface, and the taking-up efficient of light will increase because of the reduction of total reflection probability, impels the brightness of semiconductor light-emitting elements to increase.
Description of drawings
Fig. 1 is the structural representation of the semiconductor light-emitting elements before the invention process.
Fig. 2 is the structural representation of the semiconductor light-emitting elements in the implementation process of the inventive method.
Fig. 3 is the schematic diagram of the semiconductor light-emitting elements of method making of the present invention.
Embodiment
Relevant detailed content of the present invention and technical descriptioon, existing accompanying drawings is as follows:
Method at first of the present invention is based upon each layer material on the base material, can carry out by method known in the art, for example, organic gas molecule in space deposition (MOCVD), molecular beam epitaxy (molecular beam epitaxy, MBE) processing procedure, hydride gas-phase epitaxy (hydridevapor phase epitaxy, HVPE) processing procedure.
Please consulting shown in Figure 1ly earlier, is the structural representation of semiconductor light-emitting elements before the invention process.As shown in the figure, The present invention be directed to the InGaN series material high power blueness and the green LED that use sapphire substrates 10, and the element crystal grain after forming, be the light-emitting component of a flip chip form that penetrates from the front, the semiconductor light-emitting elements that its manufacture method step and this method are made is as follows:
On this sapphire substrates 10, form semiconductor resilient coating 20 earlier, wherein semiconductor buffer layer 20 is an III-V (three/five) compound semiconductors, as: gallium nitride (GaN), one first conductivity epitaxial loayer 30 covers on this semiconductor buffer layer 20, on this first conductivity epitaxial loayer 30, form a luminous active layer 40, on this active layer 40, form one second conductivity epitaxial loayer 50.Wherein, this first conductivity epitaxial loayer 30, the second conductivity epitaxial loayer 50 are preferably III-V (three/five) compound semiconductor, for example aluminum indium gallium nitride (Al for any of the prior art or semi-conducting material that may occur in the future
xGa
yIn
1-x-yN), wherein (0≤x≤1,0≤y≤1,0≤x+y≤1), and further mixed by P/N type admixture according to circumstances, the kind of these materials and character are by those skilled in the art is known.And this active layer 40 also is semi-conducting material and structure of the prior art or that may occur in the future, for example aluminum indium gallium nitride (AlGaInN), AlGaInP (AlGaInP), structure is single quantum well (Single Quantum Well, SQW), multiple quantum well (Multiple Quantum Well, MQW), with two heterogeneous (DoubleHeterosture, DH).
Utilize the lithography method to remove part second conductivity epitaxial loayer 50 and active layer 40, and after exposing the first conductivity epitaxial loayer 30 of part, on the part that this first conductivity epitaxial loayer 30 exposes, form one first electrode 31.Plating one deck ohmic contact layer 60 on this second conductivity epitaxial loayer 50 again, its material can be metal, as Ni/Au or tin indium oxide (indium tin oxide, ITO), zinc oxide materials such as (ZnO).Plate a reflector 70 again on this ohmic contact layer 60, this reflector 70 is that a reflectivity is greater than materials such as the aluminium more than 80%, silver, gold, in order to reflect the light that this active layer 40 is produced.So promptly finish structure as shown in Figure 1.
Please consult shown in Figure 2 again, structural representation for semiconductor light-emitting elements in the implementation process of method of the present invention, the present invention is in the successive process of the structure of Fig. 1 as described above, plating a thickness is that 50 to 100 μ m are as the barrier rib 80 that intercepts usefulness, wherein the material of this barrier rib 80 be polyimides (polyimide), benzocyclobutene (bisbenzocyclobutene, BCB) and one of them of photoresist (photoresist).Utilize the lithography method to remove to be positioned at the extra-regional barrier rib 80 of this first electrode 31 and partially reflecting layer 70, on this zone, form a metal column 90 with plating mode again, electrode as semiconductor light-emitting elements, and thickness is not less than the thickness of this barrier rib 80, and wherein the material of this metal column 90 is to can be one of them of aluminium (Al), silver (Ag), gold (Au), nickel (Ni), copper (Cu), tin (Sn).
Like this, form heat conduction good metal post 90 by plating mode, make the conductive electrode of the semiconductor light-emitting elements after the encapsulation have good thermal diffusivity, can make element itself have good thermal diffusivity for the high power blueness and the green LED of the big electric current of need; This metal column 90 can provide the powerful function that supports to the light-emitting component of a flip chip form that penetrates from the front simultaneously.
The manufacture method of last its semiconductor light-emitting elements further comprises utilizes an excimer laser (to be preferably an energy density 400mJ/cm
2, wavelength 248nm, pulse duration 38ns the KrF excimer laser) uniform irradiation on sapphire substrates 10, and place the heating plate that is warming up to 60 ℃, break away from the laser separation process of these semiconductor buffer layers 20 to impel sapphire substrates 10.
After finishing these sapphire substrates 10 separation steps, please consult shown in Figure 3 again, it is the schematic diagram of the semiconductor light-emitting elements of method making of the present invention, the present invention further utilizes the solution as potassium hydroxide (KOH), with the surface that etch is corroded this first conductivity epitaxial loayer 30, impel the surface of this first conductivity epitaxial loayer 30 to form rough surface.Rough surface will make the taking-up efficient of the light of active layer 40 increase because of the reduction of total reflection probability by this, make the light taking-up efficient of light-emitting component increase, " with the method for semiconductor component surfaces alligatoring " that No. the 472400th, its detailed theory and the visible the applicant's of effect TaiWan, China patent gazette notification number with the lifting external quantum efficiency.For the light-emitting component of aluminum indium nitride gallium series, the effect that the present invention obtains can make brightness promote more than 40% with respect to control group.
The place that the present invention need pay special attention to is, when follow-up encapsulation procedure temperature during greater than 400 ℃, this barrier rib 80 just must remove, and is defective with the fusing of avoiding this barrier rib 80 in follow-up encapsulation procedure and the product that causes.
Described before combining, the semiconductor light-emitting elements that method of the present invention is made is a kind of light-emitting component at sapphire substrates 10, and the element crystal grain after forming, it is the light-emitting component of a flip chip form that penetrates from the front, its structure from top to bottom comprises at least one first conductivity epitaxial loayer 30, an active layer 40, one second conductivity epitaxial loayer 50, an ohmic contact layer 60, a reflector 70 in regular turn, and one first electrode 31, this first electrode is positioned at the part that the first conductivity epitaxial loayer 30 of aforementioned stack architecture exposes, and the invention is characterized in:
One barrier rib 80 is positioned at this first electrode 31 and outer below, 70 zones, reflector partly, one metal column 90 that is not less than these barrier rib 80 thickness is formed at the zone of aforementioned non-barrier rib 80, and the surface of this first conductivity epitaxial loayer 30 is corroded and becomes a rough surface.
Wherein, the thickness of this barrier rib 80 is 50 to 100 μ m, and material is one of them of polyimides, benzocyclobutene and photoresist.And these metal column 90 materials are aluminium, silver, gold one of them.
Yet when follow-up encapsulation procedure temperature during greater than 400 ℃, this barrier rib 80 just must remove, and avoiding the fusing of this barrier rib 80 in follow-up encapsulation procedure, and the product that causes is defective.
Like this, the heat conduction good metal post 90 that forms by this plating mode will make the conductive electrode of the semiconductor light-emitting elements after encapsulating have good thermal diffusivity, high power blueness and green LED for the big electric current of need can make element itself have good thermal diffusivity, will be more suitable for being applied in the light-emitting diode of high electric current demand; In addition, this metal column 90 can provide the powerful function that supports to the light-emitting component of a flip chip form that penetrates from the front.Simultaneously, the first conductivity epitaxial loayer 30 that this surface forms rough surface can impel the light of active layer 40 to take out efficient and increase because of the reduction of total reflection probability, thereby makes the brightness of semiconductor light-emitting elements increase.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All in the spirit and principles in the present invention, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. the manufacture method of a semiconductor light-emitting elements, it is light-emitting component at sapphire substrates (10), growth thereon has the LED epitaxial layer that P/N connects face, comprise at least one first conductivity epitaxial loayer (30), one luminous active layer (40), one second conductivity epitaxial loayer (50), one ohmic contact layer (60), its processing procedure is to form semiconductor resilient coating (20) earlier, form the stack layer of aforementioned necessity again, an and reflector (70), with one first electrode (31), be positioned at the part that the described first conductivity epitaxial loayer (30) of aforementioned stack architecture exposes;
It is characterized in that the method for described successive process is:
Outside the zone, reflector (70) of described first electrode (31) and part, form a barrier rib (80) layer; And
On the zone of aforementioned non-barrier rib (80), form a metal column (90) that is not less than described barrier rib (80) thickness with plating mode, as the good thermal diffusivity of having of whole semiconductor light-emitting elements, and the electrode of support function;
Further utilize an excimer laser uniform irradiation on described sapphire substrates (10), impel described sapphire substrates (10) to break away from described semiconductor buffer layer (20);
Further utilize the surface of the described first conductivity epitaxial loayer (30) of solution corrosion to form a matsurface again, make the total reflection probability of light of the described first conductivity epitaxial loayer (30) reduce, thereby increase the taking-up efficient of the light of semiconductor light-emitting elements.
2. manufacture method according to claim 1 is characterized in that, the thickness of described barrier rib (80) is 50 to 100 μ m.
3. manufacture method according to claim 1 is characterized in that, described barrier rib (80) material is one of them of polyimides, benzocyclobutene and photoresist.
4. manufacture method according to claim 1 is characterized in that, described metal column (90) material is one of them of aluminium, silver, gold, nickel, copper, tin.
5. manufacture method according to claim 1, it is characterized in that, when the temperature of described follow-up encapsulation procedure during greater than 400 ℃, described barrier rib (80) need remove, to avoid defective in the fusing of barrier rib (80) described in the described follow-up encapsulation procedure and the product that causes.
6. manufacture method according to claim 1 is characterized in that, described excimer laser is an energy density 400mJ/cm preferably
2, wavelength 248nm, pulse duration 38ns the KrF excimer laser.
7. semiconductor light-emitting elements, it is the light-emitting component of a flip chip form that penetrates from the front, its structure from top to bottom comprises at least one first conductivity epitaxial loayer (30), a luminous active layer (40), one second conductivity epitaxial loayer (50), an ohmic contact layer (60), a reflector (70), and one first electrode (31) in regular turn, and described first electrode is positioned at the part that the described first conductivity epitaxial loayer (30) of aforementioned stack architecture exposes;
It is characterized in that:
One barrier rib (80) layer is positioned at described first electrode (31) and below in addition, partially reflecting layer (70) zone;
One metal column (90) that is not less than described barrier rib (80) thickness is formed at the zone of aforementioned non-barrier rib (80); And
The surface of the described first conductivity epitaxial loayer (30) is corroded becomes a rough surface.
8. semiconductor light-emitting elements according to claim 7 is characterized in that, the thickness of described barrier rib (80) is 50 to 100 μ m.
9. semiconductor light-emitting elements according to claim 7 is characterized in that, described barrier rib (80) material is one of them of polyimides, benzocyclobutene and photoresist.
10. semiconductor light-emitting elements according to claim 7, it is characterized in that, when follow-up encapsulation procedure temperature during greater than 400 ℃, described barrier rib (80) need remove, to avoid defective in the fusing of barrier rib (80) described in the described follow-up encapsulation procedure and the product that causes.
11. semiconductor light-emitting elements according to claim 7 is characterized in that, described metal column (90) material is one of them of aluminium, silver, gold, nickel, copper, tin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100904591A CN100461470C (en) | 2004-11-18 | 2004-11-18 | Semiconductor light emitting device and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100904591A CN100461470C (en) | 2004-11-18 | 2004-11-18 | Semiconductor light emitting device and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1780001A true CN1780001A (en) | 2006-05-31 |
| CN100461470C CN100461470C (en) | 2009-02-11 |
Family
ID=36770199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100904591A Active CN100461470C (en) | 2004-11-18 | 2004-11-18 | Semiconductor light emitting device and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100461470C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656282A (en) * | 2008-08-18 | 2010-02-24 | 晶元光电股份有限公司 | Light-emitting diode device, backlight module device using same and illumination device using same |
| CN101335317B (en) * | 2007-06-29 | 2010-12-08 | 广镓光电股份有限公司 | Semi-conductor light emitting component having microwave etching substrate and manufacturing method thereof |
| CN101271942B (en) * | 2007-03-20 | 2010-12-22 | 晶元光电股份有限公司 | Luminous element |
| CN102800775A (en) * | 2011-05-27 | 2012-11-28 | Lg伊诺特有限公司 | Light emitting device and light emitting apparatus having the same |
| CN109119520A (en) * | 2013-11-27 | 2019-01-01 | 晶元光电股份有限公司 | Semiconductor light emitting element |
| CN110289548A (en) * | 2019-06-17 | 2019-09-27 | 威科赛乐微电子股份有限公司 | Flip chip type VCSEL chip and its manufacturing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1189950C (en) * | 2001-07-23 | 2005-02-16 | 连勇科技股份有限公司 | Light-emitting semiconductor device capable of being surface mounted and with composite packing structure |
| CN100336234C (en) * | 2003-03-03 | 2007-09-05 | 诠兴开发科技股份有限公司 | Bare crystal LED |
| US20040211972A1 (en) * | 2003-04-22 | 2004-10-28 | Gelcore, Llc | Flip-chip light emitting diode |
-
2004
- 2004-11-18 CN CNB2004100904591A patent/CN100461470C/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271942B (en) * | 2007-03-20 | 2010-12-22 | 晶元光电股份有限公司 | Luminous element |
| CN101335317B (en) * | 2007-06-29 | 2010-12-08 | 广镓光电股份有限公司 | Semi-conductor light emitting component having microwave etching substrate and manufacturing method thereof |
| CN101656282A (en) * | 2008-08-18 | 2010-02-24 | 晶元光电股份有限公司 | Light-emitting diode device, backlight module device using same and illumination device using same |
| CN102800775A (en) * | 2011-05-27 | 2012-11-28 | Lg伊诺特有限公司 | Light emitting device and light emitting apparatus having the same |
| US9269878B2 (en) | 2011-05-27 | 2016-02-23 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
| US9673366B2 (en) | 2011-05-27 | 2017-06-06 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
| CN109119520A (en) * | 2013-11-27 | 2019-01-01 | 晶元光电股份有限公司 | Semiconductor light emitting element |
| CN110289548A (en) * | 2019-06-17 | 2019-09-27 | 威科赛乐微电子股份有限公司 | Flip chip type VCSEL chip and its manufacturing method |
| CN110289548B (en) * | 2019-06-17 | 2021-04-27 | 威科赛乐微电子股份有限公司 | Flip chip type VCSEL chip and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100461470C (en) | 2009-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7129527B2 (en) | Light emitting diode and method of making the same | |
| US7326967B2 (en) | Light emitting diode having an omnidirectional reflector including a transparent conductive layer | |
| US6869820B2 (en) | High efficiency light emitting diode and method of making the same | |
| KR100890948B1 (en) | Light-emitting Apparatus | |
| TWI495141B (en) | Method for forming wafer light-emitting construction and light-emitting device | |
| KR20080065666A (en) | Nitride semiconductor light emitting element and method for producing nitride semiconductor light emitting element | |
| WO2006011672A1 (en) | Positive electrode for semiconductor light-emitting device | |
| US20070010035A1 (en) | Light emitting diode and manufacturing method thereof | |
| WO2010095353A1 (en) | Light-emitting diode, method for producing same, and light-emitting diode lamp | |
| KR100774198B1 (en) | LED having vertical structure | |
| CN101533883A (en) | High-efficiency light-emitting device and manufacturing method thereof | |
| JP2011034989A (en) | Semiconductor light-emitting element and method for manufacturing the same, lamp, electronic apparatus, and mechanical apparatus | |
| JP2007067184A (en) | Led package | |
| WO2023093446A1 (en) | Light-emitting diode chip and light-emitting apparatus | |
| KR20090079122A (en) | Reflective structure and light emitting device | |
| KR20080027584A (en) | Vertical light emitting diode and method of fabricating the same | |
| CN100461470C (en) | Semiconductor light emitting device and production thereof | |
| CN1734798A (en) | Omnidirectional reflector LED with transparent conductive layer | |
| CN1147937C (en) | Novel process for preparing gallium nitride based LED | |
| KR101115533B1 (en) | Flip chip Light-emitting device and Method of manufacturing the same | |
| CN1819284A (en) | LED and production thereof | |
| US20050253129A1 (en) | Light emitting diode with enhanced luminance and method for manufacturing the same | |
| TWI241729B (en) | Semiconductor light emitting device and the method for manufacturing the same | |
| CN2754213Y (en) | Base board for upside-down mounting LED chip | |
| CN212517229U (en) | Light emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |