CN1779909A - Method for producing germanium-silicon thin-membrane materials on insulator - Google Patents
Method for producing germanium-silicon thin-membrane materials on insulator Download PDFInfo
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- CN1779909A CN1779909A CN 200410009861 CN200410009861A CN1779909A CN 1779909 A CN1779909 A CN 1779909A CN 200410009861 CN200410009861 CN 200410009861 CN 200410009861 A CN200410009861 A CN 200410009861A CN 1779909 A CN1779909 A CN 1779909A
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Abstract
A process for preparing the GeSi alloy film on an insulator includes such steps as using the molecular beam epitaxial equipment to grow the epitaxial GeSi alloy film on Si substrate on the insulator, high-temp annealing in the quartz tube type annealing furnace full of oxidizing atmosphere, and removing the oxidized layer from the surface of material by wet-type chemical corrosion method or chemico-mechanical polishing method. The resultant material can be used as the substrate for growing the epitaxial strain silicon material on insulator (sSOI).
Description
Technical field
The invention belongs to technical field of semiconductors, be meant a kind of method for preparing germanium on insulator silicon thin film material especially.
Background technology
The germanium silicon device has been obtained immense success in the field of high speed device application such as mobile communication, microprocessor chip, present the situation of competing mutually with GaAs device.Yet, compare the germanium silicon device with the body silicon device and there is no obvious improvement at low-power consumption, radioresistance, aspect of performance such as high temperature resistant.Silicon-on-insulator substrate (SOI) technology is the ideal platform of new type integrated circuits such as exploitation low-power consumption, radioresistance, high temperature resistant, high integration, but traditional silicon-on-insulator circuit and device do not break away from the physical property restriction of body silicon materials in itself, have the deficiency of high speed performance aspect.Germanium on insulator silicon thin film (SGOI) technology that on the basis of above-mentioned two kinds of technical advantages, grows up, and base strained silicon technology thereon is to be different from stock size to dwindle the effective way that the another kind of method can significantly improve the si-substrate integrated circuit performance on existing technology level.Germanium on insulator silicon thin film material is with the full dielectric isolation structure of its uniqueness with as the backing material of epitaxial growing strain silicon film, can be novel ultrahigh speed, low-power consumption, high integration silicon-based devices and the chip of research and development a kind of new solution is provided, promise to be the physics limit that breaks through the body silicon device, the novel semiconductor material of in deep-submicron VLSI (very large scale integrated circuit) chip mainstream technology, using, but have only the higher relaxation attitude germanium-silicon thin membrane of Ge content just can give full play to the useful effect of strained silicon technology.Therefore how on dielectric substrate, to prepare the higher relaxation attitude germanium-silicon thin membrane of high-quality Ge content and improve its cost performance, will be directly connected to closely-related with it strained silicon technology obtains extensive use on the high-performance CMOS device prospect.
Summary of the invention
The purpose of this invention is to provide a kind of method for preparing germanium on insulator silicon thin film material, can on dielectric substrate, prepare higher relaxation attitude germanium-silicon thin membrane of high-quality Ge content and cost performance height.
For achieving the above object, a kind of method for preparing germanium on insulator silicon thin film material provided by the invention, step is as follows:
A, utilizing molecular beam epitaxy (MBE), is backing material epitaxial growth Ge-Si alloy firm with the silicon-on-insulator with gas-solid source molecular beam epitaxy equipment promptly;
B, in the quartz tube type annealing furnace of oxidizing atmosphere, carry out The high temperature anneal again, promote the complete relaxationization of germanium-silicon thin membrane and further improve the crystal mass of film by the long-time high annealing in oxidizing atmosphere;
C, the oxide layer of removing material surface with wet chemical etching method or chemical mechanical polishing method, and obtain the germanium on insulator silicon thin film material of high-quality, relaxation attitude.
The described method for preparing germanium on insulator silicon thin film material is the disilane (Si with germanium metal (Ge) and gaseous state
2H
6) be molecular beam source, be backing material with silicon-on-insulator material (SOI), the thickness of silicon-on-insulator film is at 15～30nm.If the top silicon surface thickness of SOI material is thicker, the high-temperature thermal oxidation in oxidizing atmosphere that can be by repeated multiple times and the mode of chemico-mechanical polishing are come the thickness of its silicon fiml of attenuate.
The described method for preparing germanium on insulator silicon thin film material, step a comprises the steps:
Strict surface clean is carried out in a1, the standard method that silicon-on-insulator substrate is used always in needing with integrated circuit technology before the epitaxial growth experiment;
A2, in the growth room of molecular beam epitaxial device adsorbed gas and the natural oxidizing layer of heated substrate to 700～850 ℃ to remove substrate surface under the high vacuum state;
A3, with reflection high energy electron diffraction the composition again of sample surfaces is looked like to carry out original position and monitor in real time;
A4, treat that clear bright line style composition picture and after a period of stabilisation again appears in substrate surface, reduces substrate temperature to 500～530 ℃ preparation again and carries out the epitaxial growth of germanium-silicon alloy film;
A5, control germanium source oven temperature degree are 1050～1150 ℃, and the disilane flow is 4～6ml/min, and the about 30～200min of growth time also can regulate according to the component and the thickness requirement of germanium-silicon alloy film.
The described method for preparing germanium on insulator silicon thin film material, among the step b material after the epitaxial growth is put into the quartz tube type annealing furnace, in atmosphere or feed low discharge oxygen: the heating rate with 5～10 ℃/min in the oxidizing atmosphere of nitrogen=1: 2 rises to 1050 ℃ from room temperature, and high annealing is carried out in insulation more than 5 hours.In this process, realize of the conversion of the ultra-thin silicon buried regions of the complete relaxationization of epitaxial growth Ge silicon thin film and its underpart to the germanium-silicon alloy film, and enrichmentization and the homogenizing of germanium component in the germanium-silicon alloy film.Germanium atom is easy to self-diffusion in silicon crystal lattice, but is difficult for spreading in silicon dioxide layer.Compare with silicon atom when high-temperature oxydation, the germanium atom in the germanium-silicon thin membrane is not easy to generate oxide and loses.
The described method for preparing germanium on insulator silicon thin film material, the wet chemical etching method described in the step c is for soaking the oxide layer that the sample after annealing is removed material surface with hydrofluoric acid solution.
The described method for preparing germanium on insulator silicon thin film material, wherein hydrofluoric acid in the hydrofluoric acid solution: the volume ratio of deionized water is 2: 1, soaks 20～30min.
In sum, it is simple, with low cost that method of the present invention has a process route, is suitable for advantages such as small lot batch manufacture, be particularly useful for making the development of high germanium component, ultrathin germanium on insulator silicon thin film material, can realize accurately controlling its Ge content and thickness.It has overcome the process route complexity that notes oxygen isolation method (SIMOX), wafer bonding and back of the body etching method prior aries such as (Wafer bonding and etch back) exists, technical merit and has required shortcoming high, that production cost is high and the cycle is long.The material of the present invention's development can be applicable to the development of novel high-performance silicon base CMOS device, and can be used as the substrate use of further epitaxial growth strained-silicon-on-insulator material (sSOI).
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after wherein:
Fig. 1 is the structural representation of gas-solid source molecular beam epitaxy equipment;
Fig. 2 a～Fig. 2 d is the technological process and the material structure schematic diagram of the inventive method.
Embodiment
Please consult Fig. 1, Fig. 2 a～Fig. 2 d simultaneously, further specify technical characterictic of the present invention below in conjunction with concrete growth technique.
The present invention is that the SOI material that will annotate the φ 100～150mm of oxygen isolation method (SIMOX) preparation cuts into the wafer of φ 38mm as substrate with laser cutting machine, with silicon wafer cleaning method commonly used in the integrated circuit technology SOI substrate surface is carried out strictly chemical cleaning and reduction processing, the thickness of top silicon surface that makes stand-by SOI substrate is at 15～30nm.The structure of SOI backing material is shown in Fig. 2 a.
Enter Sample Room 10 again,,, put into by analysis room 9 on the substrate holder 5 of growth room 8 by guide rail 3 by valve 1 and valve plates 2,4.Vacuum degrees under the room temperature in the growth room 8 should keep＜and 5 * 10
-7Pa, elder generation's rising underlayer temperature to 708 ℃ carries out open surface degassing to the SOI substrate, with high electron energy diffractometer the composition again of sample surfaces is looked like to carry out real time monitoring simultaneously, wait to occur clearly line style again the composition picture and stablize 20～30min after, reduce the epitaxial growth of substrate temperature to 520 ℃ beginning germanium-silicon thin membrane.Disilane spray gun 6 flows are 6ml/min, and germanium source stove 7 temperature are 1050 ℃, and the growth germanium-silicon thin membrane stops experiment after 3 hours 27 minutes.The structure of epitaxial growth Ge silicon thin film is shown in Fig. 2 b.
To put into the quartz glass tube annealing furnace after this sample taking-up, the heating rate with 5～10 ℃/min in air atmosphere rises to 1050 ℃ from room temperature, is incubated 6 hours annealing backs with the stove natural cooling.At this moment, the structure of germanium-silicon thin membrane is shown in Fig. 2 c.
Then the sample after the annealing is immersed hydrofluoric acid: in the hydrofluoric acid solution of the volume ratio of deionized water=2: 1, concentration～26% soaks 30min, makes the germanium on insulator silicon thin film material that presents the minute surface light.The structure of the germanium-silicon thin membrane that obtains at last is shown in Fig. 2 d.
The germanium on insulator silicon thin film sample for preparing under the above condition its defect concentration of metallomicroscope etch pit notation (Etch-Pit-Density) test shows about 5 * 10
5/ cm
2, with the defect concentration of SOI substrate surface silicon fiml at the same order of magnitude.The analysis showed that through Luther husband's back scattering spectrum (RBS) Ge content of this sample is 0.374, germanium-silicon thin membrane thickness is 437nm.
Claims (6)
1, a kind of method for preparing germanium on insulator silicon thin film material is characterized in that step is as follows:
A, to utilize gas-solid source molecular beam epitaxy equipment be backing material epitaxial growth Ge-Si alloy firm with the silicon-on-insulator;
B, in the quartz tube type annealing furnace of oxidizing atmosphere, carry out The high temperature anneal again;
C, the oxide layer of removing material surface with wet chemical etching method or chemical mechanical polishing method.
2, by the described method for preparing germanium on insulator silicon thin film material of claim 1, it is characterized in that, be that the disilane with germanium metal and gaseous state is a molecular beam source, with the silicon-on-insulator material backing material, the thickness of silicon-on-insulator film is at 15～30nm.
3, by the described method for preparing germanium on insulator silicon thin film material of claim 1, it is characterized in that: step a comprises the steps:
Strict surface clean is carried out in a1, the standard method that silicon-on-insulator substrate is used always in needing with integrated circuit technology before the epitaxial growth experiment;
A2, in the growth room of molecular beam epitaxial device adsorbed gas and the natural oxidizing layer of heated substrate to 700～850 ℃ to remove substrate surface under the high vacuum state;
A3, with reflected high energy electron diffraction the composition again of sample surfaces is looked like to carry out original position and monitor in real time;
A4, treat that clear bright line style composition picture and after a period of stabilisation again appears in substrate surface, reduces substrate temperature to 500～530 ℃ preparation again and carries out the epitaxial growth of germanium-silicon alloy film;
A5, control germanium source oven temperature degree are 1050～1150 ℃, and the disilane flow is 4～6ml/min, the about 30～200min of growth time.
4, by the described method for preparing germanium on insulator silicon thin film material of claim 1, it is characterized in that: be that the material after the epitaxial growth is put into the quartz tube type annealing furnace among the step b, in atmosphere or feed low discharge oxygen: the heating rate with 5～10 ℃/min in the oxidizing atmosphere of nitrogen=1: 2 rises to 1050 ℃ from room temperature, and high annealing is carried out in insulation more than 5 hours.
5, by the described method for preparing germanium on insulator silicon thin film material of claim 1, it is characterized in that: the wet chemical etching method described in the step c is for soaking the oxide layer that the sample after annealing is removed material surface with hydrofluoric acid solution.
6, by the described method for preparing germanium on insulator silicon thin film material of claim 5, it is characterized in that: hydrofluoric acid in the hydrofluoric acid solution: the volume ratio of deionized water is 2: 1, soaks 20～30min.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410009861 CN1779909A (en) | 2004-11-25 | 2004-11-25 | Method for producing germanium-silicon thin-membrane materials on insulator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200410009861 CN1779909A (en) | 2004-11-25 | 2004-11-25 | Method for producing germanium-silicon thin-membrane materials on insulator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100447950C (en) * | 2007-01-26 | 2008-12-31 | 厦门大学 | Method for preparation of GeSi virtual substrate with low dislocation density |
| CN101140868B (en) * | 2006-09-06 | 2010-06-09 | 胜高股份有限公司 | Epitaxial wafer and method of producing same |
| CN102122616B (en) * | 2010-01-08 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device |
-
2004
- 2004-11-25 CN CN 200410009861 patent/CN1779909A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140868B (en) * | 2006-09-06 | 2010-06-09 | 胜高股份有限公司 | Epitaxial wafer and method of producing same |
| CN100447950C (en) * | 2007-01-26 | 2008-12-31 | 厦门大学 | Method for preparation of GeSi virtual substrate with low dislocation density |
| CN102122616B (en) * | 2010-01-08 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device |
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