CN1779897A - Organic field emission display device and production thereof - Google Patents
Organic field emission display device and production thereof Download PDFInfo
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- CN1779897A CN1779897A CN 200410084379 CN200410084379A CN1779897A CN 1779897 A CN1779897 A CN 1779897A CN 200410084379 CN200410084379 CN 200410084379 CN 200410084379 A CN200410084379 A CN 200410084379A CN 1779897 A CN1779897 A CN 1779897A
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Abstract
An organic field emission display with high luminescent efficiency, low anode voltage and cost and small thickness is composed of multiple line electrode stripes on cathode substrate and with electronic emitters on them, the transparent electrode strips and organic red, green and blue fluorescent body on anode substrate, and the column electrodes formed by metallic grids between said two substrates. Its preparing process features use of photoetching and stripping technique to prepare the color pixels on anode substrate for increasing the definition.
Description
Technical field
The present invention relates to a kind of flat-panel display device and manufacture method, relate in particular to the manufacture method of organic field emission display device and this display device.
Background technology
Along with the develop rapidly of flat-panel monitor, cathode ray tube (CRT) has lost its empery status in image display device gradually.Many flat panel displays continue to bring out and constantly develop and indicating that 21 century will be the epoch of flat panel display.By the displaying principle classification, flat panel display mainly contains: liquid crystal display (LCD), plasma display panel (PDP) show, electroluminescence shows that (ELD), light-emitting diode (LED) show, Organic Light Emitting Diode (OLED) shows, vacuum fluorescent display shows (VFD), Field Emission Display (FED).
The present invention proposes a kind of novel flat-panel display device, it belongs to feds, and wherein traditional phosphor is substituted by the organic semiconductor luminescent material.We are the organic Field Emission Display of its called after (Organic Field Emission Device, O-FED) device.
Excitation state in the organic solid is divided into singlet and triplet state, and the former causes fluorescent emission, and the latter causes phosphorescent emissions.Because the charge carrier in Organic Light Emitting Diode (OLED) display device injects from electrode, the restriction of statistics so luminous efficiency will be subjected to spinning, hole and electronics are in conjunction with the highest probability position 25% that forms singlet exciton, and this also is the highest theoretical efficiency of present fluorescent material device.And when being used in the FED display device,, can realize 100% fluorescence efficiency to luminous organic material because organic molecule excitation state is by the electron excitation of cathode emission.The generation and the compound restriction that is not subjected to material quality of the excitation state that is produced by cathode-ray so we can use photoetching process that it is carried out figure processing, thereby realize that high-resolution shows in addition.
Summary of the invention
One of purpose of the present invention is to provide a kind of novel flat-panel display device one organic field emission display device (O-FED), it belongs to feds, fluorescent emissive materials is wherein substituted by luminous organic material, its advantage for can realize high-resolution demonstration, luminous efficiency height, manufacture craft is simple and cost of manufacture is cheap.
Another purpose of the present invention is to provide the preparation method of this flat-panel display device.
For achieving the above object, the concrete structure of organic Field Emission Display provided by the invention (O-FED) device is:
On the cathode base of organic field emission display, have many column electrodes, on anode substrate, have red, green, the blue three primary colors luminous organic material of strip, separate by making superincumbent latticed black matrix in advance between them.Have metal gates to constitute the row electrode between two substrates, this grid is parallel with three primary colors organic light emission pixel bar and intersect vertical with the minus plate column electrode.Metal gates is near negative electrode one side.Be expert on the negative electrode with electronic emission material.
The method for preparing the aforementioned display device part provided by the invention, its key step is:
1, sputter or evaporation column electrode on cathode base, and photoetching moulding; Used material is a kind of or any two kinds alloying metal and the ITO among Ta, W, Ti, the Mo;
2, on substrate, make needed figure with photoresist, again with evaporation, sputter or other method on backing material or method such as solution deposition form one deck catalyst film, stripping photoresist forms needed catalyst pattern then.With CVD or other method local carbon nano-tube (CNT) figure of catalyst is arranged on backing material, as electron emitter.
3, photoetching ITO strip anode on anode substrate.
4, on anode substrate, make the black matrix of pixel, prevent that the electron bombard adjacent image point from causing mixed color phenomenon.
5, make needed figure with photoresist on anode substrate, method of evaporating forms red organic luminous layer and aluminium lamination again, and stripping photoresist forms needed pixel graphics then.Repeat above step and form green and blue light-emitting layer respectively.Wherein aluminium lamination is as resilient coating and reflector.Color schemes also can adopt suitable mask evaporation, printing, laser transfer, white light to add color filter film, and blue light conversion down waits known method.
6, between anode and negative electrode and near negative electrode the mesh grid bar is set, gate bar is corresponding one by one with anode pixel bar and intersect with negative electrode.
7, encapsulation and pumping high vacuum.
Basic structure of the present invention can be that the triode configuration also can be the diode configuration.
Field emission array among the present invention can be made of carbon nano-tube (CNT), also can constitute by little point of metal or the little point of silicon, also can be launched (SED) device by surface field constitutes, also can constitute, for example: the FED of the FED of metal-insulator-metal type (MIM) structure and metal-insulator semiconductor-metal (MISM) structure by the thin film field emitter.
Luminous organic material can be a micromolecule among the present invention, also can be polymer.Can adopt the method for evaporation, also can printing, the method film forming of transfer printing, ink-jet.
Anode buffer layer among the present invention can be aluminium (Al) electrode, also can be other metal or alloy.
Advantage of the present invention is as described below:
The present invention proposes a kind of novel flat-panel display device-organic field emission display device (O-FED), wherein adopt organic fluorescence materials to substitute traditional inorganic fluorescent material.
Compare with OLED, the restriction of statistics because the exciton of cathode-ray exciting is not spinned can improve the fluorescence efficiency of luminous organic material widely.Compare with inorganic fluorescent powder, the cost of luminous organic material is low, stock utilization is high, and can use photoetching process and carry out precision graphic processing.So having, this display unit can realize advantages such as high-resolution demonstration, luminous efficiency height and cost of manufacture are cheap.
Description of drawings
Fig. 1 is the structural profile schematic diagram of organic field emission display cell.
1. anode substrate; 2.ITO anode; 3. black matrix; 4. red pixel; 5. green pixel; 6. blue picture element; 7.Al resilient coating; 8. cathode substrate; 9. go negative electrode; 10. electron emitter; 11. row grid; 12. sealing frame
Fig. 2 is preparation technology's flow chart of organic field emission display anode autochromatic plate.
A. photoetching ito anode; B. make black matrix. C. make the photoresist window and evaporate red illuminating material and the aluminium resilient coating; D. stripping photoresist generates red pixel; E. make the photoresist window and evaporate green luminescent material and the aluminium resilient coating; F. stripping photoresist generates green pixel; G. make the photoresist window and evaporate blue emitting material and the aluminium resilient coating; H. stripping photoresist generates blue picture element.
Embodiment
1 be described below in conjunction with the accompanying drawings; Make it to form strip shaped electric poles 2 with photoetching ito thin film on the anode substrate 1 of ITO, spin coating black polymer material also prepares netted black matrix 3 with the method for photoetching.Spin coating photoresist and exposure imaging are produced window, continuous evaporating-plating red light emitting layer (Alq3:DCJTB) and aluminium resilient coating 7 then, and thickness is respectively 100 to 1000 nanometers and 50 to 100 nanometers, and stripping photoresist in developer solution stays red pixel 4.Spin coating photoresist and exposure imaging are produced window again, then continuous evaporating-plating green light emitting layer (AlQ
3: Coumarin) with aluminium resilient coating 7, thickness is respectively 100 to 1000 nanometers and 50 to 100 nanometers, and stripping photoresist in developer solution stays green pixel 5.Spin coating photoresist and exposure imaging are produced window again, continuous evaporating-plating blue light-emitting layer (AND:Perylene) and aluminium resilient coating 7 then, and thickness is respectively 100 to 1000 nanometers and 50 to 100 nanometers, and stripping photoresist in developer solution stays blue picture element 6.Splash-proofing sputtering metal Ta is as cathode material 9 on cathode base 8, and thickness is 500 nanometers and is photo-etched into the bar shaped column electrode; Spin coating photoresist and exposure imaging are made needed graphical window on this substrate again, evaporate one deck catalyst film again, and stripping photoresist forms needed catalyst pattern then.With the CVD method in that local carbon nano-tube (CNT) figure of catalyst is arranged, as electron emitter 10.Between anode and negative electrode and near negative electrode mesh grid bar 11 is set, gate bar is corresponding one by one with anode pixel bar and intersect with cathode strip.At last, carry out packaging technology and be evacuated to high vacuum.
Make it to form strip shaped electric poles 2 with photoetching ito thin film on the anode substrate 1 of ITO, spin coating black polymer material also prepares netted black matrix 3 with the method for photoetching.Spin coating photoresist and exposure imaging are produced window, continuous evaporating-plating red light emitting layer (MEH-PPV, polyphenylenevinylene derivative) and aluminium resilient coating 7 then, thickness is respectively 200 nanometers and 100 nanometers, stripping photoresist in developer solution stays red pixel 4.Spin coating photoresist and exposure imaging are produced window again, continuous evaporating-plating green light emitting layer (P-PPV, phenyl substituted polyphenylenevinylene) and aluminium resilient coating 7 then, thickness is respectively 200 nanometers and 100 nanometers, stripping photoresist in developer solution stays green pixel 5.Spin coating photoresist and exposure imaging are produced window again, then the continuous evaporating-plating blue light-emitting layer (PF, polyfluorene) and aluminium resilient coating 7, thickness is respectively 200 nanometers and 100 nanometers, stripping photoresist in developer solution stays blue picture element 6.Splash-proofing sputtering metal Ta is as cathode material 9 on cathode base 8, and thickness is 800 nanometers and is photo-etched into the bar shaped column electrode; The CNT powder is evenly mixed with organic binder bond, form figure with the method for silk screen printing on the bar shaped negative electrode, carry out sintering then and form electron emitter 10, sintering temperature is lower than 500 ℃.Between anode and negative electrode and near negative electrode mesh grid bar 11 is set, gate bar is corresponding one by one with anode pixel bar and intersect with cathode strip.At last, carry out packaging technology and be evacuated to high vacuum.
Claims (5)
1, a kind of field emission display is characterized in that having many column electrodes on cathode base, has electron emitter on it; On anode substrate, have strip like transparent electrode and red, green, blue three primary colors organic material fluorophor; Between two substrates, have metal gates to constitute the row electrode, this grid parallel with three primary colors organic light emission pixel bar and with the minus plate column electrode intersect vertical, close negative electrode one side of metal gates.
2, organic material fluorophor as claimed in claim 1 is characterized in that, luminous organic material can be the micromolecule organic material, also can be polymer, can also be organic-inorganic hybrid material; Can adopt the method for evaporation, also can printing, transfer printing or other known method film forming.
3, the basic structure of display device as claimed in claim 1 can be that the triode configuration also can be the diode configuration, and other electrode that is used to control or circuit can also be set on minus plate.
4, the field emission array of display device as claimed in claim 1 can be made of carbon nano-tube (CNT), also can constitute by little point of metal or the little point of silicon, also can be launched (SED) device by surface field constitutes, also can constitute, for example: the FED of the FED of metal-insulator-metal (MIM) structure and metal insulater-semiconductor-metal (MISM) structure by the thin film field emitter.
5, the main preparation process of display device as claimed in claim 1 is:
A, on cathode base sputter or evaporation column electrode, and photoetching moulding; Used material is a kind of or any two kinds alloying metal and the ITO among Ta, W, Ti, the Mo;
B, on substrate, make needed figure with photoresist, again with evaporation, sputter or other method on backing material or method such as solution deposition form one deck catalyst film, stripping photoresist forms needed catalyst pattern then.With CVD or other method local carbon nano-tube (CNT) figure of catalyst is arranged on backing material, as electron emitter.
C, on anode substrate photoetching ITO strip anode.
D, on anode substrate, make the black matrix of pixel, prevent that the electron bombard adjacent image point from causing mixed color phenomenon.
E, make needed figure with photoresist on anode substrate, method of evaporating forms red organic luminous layer and aluminium lamination again, and stripping photoresist forms needed pixel graphics then.Repeat above step and form green and blue light-emitting layer respectively.Wherein aluminium lamination is as resilient coating and reflector; Color schemes also can adopt suitable mask evaporation, printing, laser transfer, white light to add color filter film, and blue light is the conversion known method down.
F, between anode and negative electrode and near negative electrode the mesh grid bar is set, gate bar is corresponding one by one with anode pixel bar and intersect with negative electrode.
G, encapsulation and pumping high vacuum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410084379 CN1779897A (en) | 2004-11-19 | 2004-11-19 | Organic field emission display device and production thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410084379 CN1779897A (en) | 2004-11-19 | 2004-11-19 | Organic field emission display device and production thereof |
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| CN1779897A true CN1779897A (en) | 2006-05-31 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441969B (en) * | 2007-11-23 | 2010-07-28 | 清华大学 | Field emission pixel tube |
| CN104103470A (en) * | 2014-07-31 | 2014-10-15 | 电子科技大学 | Polycrystal hexaboride annular field emission cathode and preparation method thereof |
| CN105954914A (en) * | 2016-06-22 | 2016-09-21 | 深圳市华星光电技术有限公司 | Method for preparing color blocking layers of liquid crystal display panels |
-
2004
- 2004-11-19 CN CN 200410084379 patent/CN1779897A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441969B (en) * | 2007-11-23 | 2010-07-28 | 清华大学 | Field emission pixel tube |
| US7821193B2 (en) | 2007-11-23 | 2010-10-26 | Tsinghua University | Color pixel element for field emission display |
| CN104103470A (en) * | 2014-07-31 | 2014-10-15 | 电子科技大学 | Polycrystal hexaboride annular field emission cathode and preparation method thereof |
| CN105954914A (en) * | 2016-06-22 | 2016-09-21 | 深圳市华星光电技术有限公司 | Method for preparing color blocking layers of liquid crystal display panels |
| CN105954914B (en) * | 2016-06-22 | 2019-03-22 | 深圳市华星光电技术有限公司 | A kind of preparation method of liquid crystal display panel color blocking layer |
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