CN1770483A - GaN-based high monochromaticity light source array - Google Patents
GaN-based high monochromaticity light source array Download PDFInfo
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- CN1770483A CN1770483A CNA2005100293889A CN200510029388A CN1770483A CN 1770483 A CN1770483 A CN 1770483A CN A2005100293889 A CNA2005100293889 A CN A2005100293889A CN 200510029388 A CN200510029388 A CN 200510029388A CN 1770483 A CN1770483 A CN 1770483A
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Abstract
High monochromaticity light source array of the present invention comprises: metal substrate, gallium nitride light-emitting diode that is arranged in order on metal substrate and narrow-band filter array.Diode sends the light that width is certain wave band of tens nanometers as light source, and narrow-band filter array then spatially is divided into the light in this wave band the monochromatic light of some bundle different wave lengths.The present invention can pass through to select the light-emitting diode of different-waveband, and integrated with corresponding narrow-band filter array, to obtain the high monochromaticity light emitting array of different-waveband.This light emitting array can satisfy the demands aspect integrated monochromatic source such as microminiature spectrometer.
Description
Technical field
The present invention relates to illuminating source, specifically be meant the high monochromaticity light source array that integrates by gallium nitride light-emitting diode and narrow-band filter array.
Background technology
The GaN semi-conducting material has the special performance of emission blue light under high frequency, hot conditions, is the new generation of semiconductor material after Si and GaAs.By the GaN base semiconductor materials such as alloy InGaN, AlGaN that GaN, InN and AlN formed, can obtain continuously adjustable band gap from 1.9eV to 6.2eV by adjusting component, cover wave band from ultraviolet light to the visible light wide range.The inside and outside quantum efficiency height of these GaN base semiconductor materials, possess advantages such as high-luminous-efficiency, high heat conductance, high temperature resistant, radioresistance, acid and alkali-resistance, high strength and high rigidity, can be made into blue, green, purple efficiently, white light-emitting diode (diode) and laser diode, and become at present one of state-of-the-art semi-conducting material in the world.
Along with the breakthrough of technology and the lifting of brightness, the diode applications product is from the power supply indicator of simple computer or household electrical appliances, the backlight of sound equipment panel at present, develop into mobile phone key, colored mobile phone screen backlight, and the outdoor decoration lamp of automobile brake lamp, taillight, indoor lamp, large-scale billboard, traffic lights, building etc., and replace present illuminating fluorescent lamp probably gradually, have boundless application prospect.
Though the breadth of spectrum line of light that diode sends is all narrower than other light source, not monochromatic light, width generally has tens nanometers, still can not satisfy the application demands aspect integrated monochromatic source such as microminiature spectrometer.
Summary of the invention
In order to satisfy microminiature spectrometer etc., the objective of the invention is to propose a kind of high monochromaticity light source array that gallium nitride light-emitting diode and narrow-band filter array are integrated in the application demand aspect the integrated monochromatic source.
High monochromaticity light source array of the present invention comprises: metal substrate 1, gallium nitride light-emitting diode 2 that is arranged in order on metal substrate and narrow-band filter array 3.
Said gallium nitride light-emitting diode is made up of the luminescent layer 202 and the p-GaN upper electrode layer 203 of the n-GaN lower electrode layer 201, InGaN/GaN quantum well structure or the AlGaN/InGaN heterojunction structure that are arranged in order growth by molecular beam epitaxy or mocvd method, wherein can obtain the luminous spectrum of different-waveband by the component of regulating In or Al.
Said narrow-band filter array is 303 to form by the lower membrane that is arranged in order is 301, thickness does not wait wall array 302 and upper layer film, array=m * n, m=1,2 ..., n=1,2 ...Upper and lower tunic is identical, is (LH)
n, wall is xL, and wherein H is a high refractive index layer, and L is a low-index film, x is the wall coefficient, and the x span is 2k+1＜x≤2k+3, k=0,1 ..., n is the number of times of high refractive index layer and low-index film alternative stacked, the optical thickness of rete: nd is λ
0/ 4, λ
0For designing the centre wavelength that initial narrow band pass filter film is.
Light-emitting diode of the present invention sends the light that width is tens certain wave bands of nanometer as light source, narrow-band filter array then spatially is divided into the light in this wave band the monochromatic light of some bundle different wave lengths, the band of narrow band pass filter is logical narrow more, and institute divides the monochromaticjty of bright dipping just high more.Metal substrate plays two effects:
(1) thermal conductivity is good, helps heat radiation, the life-span that can improve diode component;
(2) reflectivity height helps returning of backlight, strengthens the efficient of forward light.
Advantage of the present invention is:
1. total constitutes a multicolor luminous battle array, as long as come received signal just can obtain the spectrum of whole luminous wave band immediately with CCD face battle array, very convenient fast;
2. the matching design with the super narrow bandpass filter arrays can make each useful forward direction monochromatic light external quantum efficiency approach 1, i.e. this luminous intensity basically identical in this wavelength of the luminous intensity of each filter unit institute corresponding wavelength light and diode component;
3. metal substrate not only helps to dispel the heat, prolong the life-span of device, helps returning of backlight simultaneously, strengthens the efficient of forward light.
Description of drawings
Fig. 1 is the structural representation of high monochromaticity light source array of the present invention: (a) be stereogram; (b) be sectional view; (c) be wherein narrow-band filter array sectional view.
Fig. 2 is the lumination of light emitting diode spectrogram of present embodiment.
Fig. 3 is that present embodiment is through the transmission spectrum (solid line) of filtered each filter unit of 8 * 4 narrow-band filter arrays and the luminescent spectrum figure (dotted line) of diode.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated:
High monochromaticity light source array of the present invention is by metal substrate 1, and gallium nitride light-emitting diode 2 that is arranged in order on metal substrate and narrow-band filter array 3 are formed.
Concrete preparation process is as follows:
At first, on the jewel substrate, be arranged in order the thick GaN sacrifice layer of mixing Si, n-GaN lower electrode layer, the In of growth 4 μ m by molecular beam epitaxy or mocvd method
xGa
1-xThe luminescent layer of N/GaN quantum well structure and p-GaN upper electrode layer.The led lighting of embodiment is composed as shown in Figure 2, and centre wavelength is 525nm.
According to the luminous spectrum of diode,, require the logical peak position of band of film system all to be distributed in the light-emitting zone of diode then with narrow band pass filter film system of its luminescence center wavelength 525nm design.
The film of present embodiment narrow-band filter array is as follows:
(LH)
nxL(HL)
n，
Wherein (LH)
nBe lower membrane system, xL is a wall, (HL)
nBe upper layer film system, H is Ta
2O
5High refractive index layer, L are SiO
2Low-index film, thicknesses of layers are 1/4 centre wavelength, and n is high refractive index layer and low-index film alternative stacked number of times, and present embodiment is 10, and x gets 1.52～2.45.
On above-mentioned light-emitting diode, adopt vacuum coating or reactive magnetron sputtering method to be coated with lower membrane system successively and thickness is the wall of 2.45L.End plated film then, the sample that has plated lower membrane system and wall is taken out, adopt ion etching process subregion conventional in the semiconductor technology to carry out the cover etching of 5 different-thickness, form 32 wall arrays that thickness does not wait, referring to patent of invention: 200310108346.5.The minimum interval layer thickness is 1.52L, the largest interval layer thickness is 2.45L, the x value of each filter unit is successively decreased with 0.03, then is coated with remaining upper layer film system on this basis, and forming 32, to have only space layer difference, other films be identical narrow-band filter array.
At last, with the above-mentioned sample upper surface for preparing, that is, upper layer film system is glued together with the silicon chip of p type (001) orientation of mixing B, is 600mJ/cm with power with cyanoacrylate adhesive
2Laser pulse from jewel substrate direction irradiation, make the GaN sacrifice layer of jewel substrate and diode decompose, formation N
2Gas and metal Ga, low temperature (40 ℃) annealing makes the fusing of rich Ga interface then, finishes the stripping process of jewel substrate.Then the light emitting source device that strips down is immersed in the acetone adhesive between device and the silicon chip is dissolved, the light emitting source device is separated with silicon chip and be attached on the metal substrate, specific operation process can be referring to document Applied PhysicsLetters 75,1360 (1999)., finally obtain high monochromaticity light source array device of the present invention.
Fig. 3 is the transmission spectrum (solid line) of 8 * 4 each unit of narrow-band filter array and the luminous spectrum (dotted line) of used diode, the band of filter is logical all very narrow, all less than 0.3nm, therefore the light that sends of light-emitting diode becomes the very high light of monochromaticjty of a series of different wave lengths after filtration after the mating plate, and the matching design can make the forward direction monochromatic light loss of each wavelength very little, and external quantum efficiency approaches 1.
Difference extraction electrode on the upper and lower electrode layer of diode as long as switch on, just can obtain the good light of monochromaticjty of 32 different wave lengths then, finishes the preparation of diode high monochromaticity light emitting array.
Claims (1)
1. GaN-based high monochromaticity light source array comprises: metal substrate (1), and gallium nitride light-emitting diode that is arranged in order on metal substrate (2) and narrow-band filter array (3) is characterized in that:
Said gallium nitride light-emitting diode is made up of the luminescent layer (202) and the p-GaN upper electrode layer (203) of the n-GaN lower electrode layer (201), InGaN/GaN quantum well structure or the AlGaN/InGaN heterojunction structure that are arranged in order growth by molecular beam epitaxy or mocvd method, wherein can obtain the luminous spectrum of different-waveband by the component of regulating In or Al;
Said narrow-band filter array is that wall array (302) and the upper layer film system (303) that (301), thickness do not wait forms by the lower membrane that is arranged in order, array=m * n, m=1,2 ..., n=1,2 ..., upper and lower tunic is identical, is (LH)
n, wall is xL, and wherein H is a high refractive index layer, and L is a low-index film, x is the wall coefficient, and the x span is 2k+1＜x≤2k+3, k=0,1 ..., n is the number of times of high refractive index layer and low-index film alternative stacked, the optical thickness of rete: nd is λ
0/ 4, λ
0For designing the centre wavelength that initial narrow band pass filter film is.
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| CNB2005100293889A CN100355097C (en) | 2005-09-02 | 2005-09-02 | GaN-based high monochromaticity light source array |
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| CNB2005100293889A CN100355097C (en) | 2005-09-02 | 2005-09-02 | GaN-based high monochromaticity light source array |
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| CN1770483A true CN1770483A (en) | 2006-05-10 |
| CN100355097C CN100355097C (en) | 2007-12-12 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100401544C (en) * | 2006-06-30 | 2008-07-09 | 中国科学院上海技术物理研究所 | Disk type array in monochromatic source based on gallium nitride base |
| CN102832356A (en) * | 2012-08-30 | 2012-12-19 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) packaging structure, manufacturing method thereof and luminescent device |
| CN104568756A (en) * | 2015-01-21 | 2015-04-29 | 中国科学院上海技术物理研究所 | Medium-wave infrared spectrum identifiable detector |
| CN105742377A (en) * | 2016-02-22 | 2016-07-06 | 中山大学 | Photoelectric detector with band-pass filtering function for visible light communication |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6072445A (en) * | 1990-12-31 | 2000-06-06 | Kopin Corporation | Head mounted color display system |
| US6765276B2 (en) * | 2001-08-23 | 2004-07-20 | Agilent Technologies, Inc. | Bottom antireflection coating color filter process for fabricating solid state image sensors |
| JP2003163374A (en) * | 2001-11-27 | 2003-06-06 | Toyota Central Res & Dev Lab Inc | Nitride semiconductor light emitting diode |
-
2005
- 2005-09-02 CN CNB2005100293889A patent/CN100355097C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100401544C (en) * | 2006-06-30 | 2008-07-09 | 中国科学院上海技术物理研究所 | Disk type array in monochromatic source based on gallium nitride base |
| CN102832356A (en) * | 2012-08-30 | 2012-12-19 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) packaging structure, manufacturing method thereof and luminescent device |
| CN102832356B (en) * | 2012-08-30 | 2015-04-08 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) packaging structure, manufacturing method thereof and luminescent device |
| US9412966B2 (en) | 2012-08-30 | 2016-08-09 | Boe Technology Group Co., Ltd. | OLED encapsulating structure and manufacturing method thereof, and light-emitting device |
| CN104568756A (en) * | 2015-01-21 | 2015-04-29 | 中国科学院上海技术物理研究所 | Medium-wave infrared spectrum identifiable detector |
| CN105742377A (en) * | 2016-02-22 | 2016-07-06 | 中山大学 | Photoelectric detector with band-pass filtering function for visible light communication |
| CN105742377B (en) * | 2016-02-22 | 2018-01-05 | 中山大学 | A kind of visible light communication photodetector with band-pass filtering function |
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| CN100355097C (en) | 2007-12-12 |
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