CN1753586A - Organic electroluminescence display device and its manufacturing method - Google Patents
Organic electroluminescence display device and its manufacturing method Download PDFInfo
- Publication number
- CN1753586A CN1753586A CN 200510092304 CN200510092304A CN1753586A CN 1753586 A CN1753586 A CN 1753586A CN 200510092304 CN200510092304 CN 200510092304 CN 200510092304 A CN200510092304 A CN 200510092304A CN 1753586 A CN1753586 A CN 1753586A
- Authority
- CN
- China
- Prior art keywords
- layer
- display
- reflecting layer
- organic electroluminescence
- light shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
There is disclosed a organic electroluminescent display, which includes a base plate, an antireflective layer, a shading layer, a thin film transistor and an organic light-emitting diode. Its manufacture method comprises the following steps: first, form the antireflective layer on the base plate; next, form the shading layer on the antireflective layer and define the shading layer as first and second zones; then, remove the shading layer in the first zone to expose the antireflective layer and at last make the thin film transistor above the shading layer in the second zone and form the organic light-emitting diode above the antireflective layer in the first zone.
Description
Technical field
The present invention relates to a kind of display of organic electroluminescence and manufacture method thereof, relate in particular to a kind of display of organic electroluminescence and manufacture method thereof with anti-reflecting layer.
Background technology
(Contrast Ratio is that the consumer chooses one of important pointer of display CR) to contrast, is defined as when same point is the brightest on the screen and the brightness ratio when the darkest.High contrast means relative higher brightness and presents the gorgeous degree of color.As benchmark, manufacturer extrapolates high more contrast and means good more display quality.Because under these circumstances, black can be deep, and white also can compare " in vain ", and so, display just can demonstrate more colors.
Display of organic electroluminescence (organic electroluminescent display panel) is a kind of self-emitting display, has minimum brightness when not luminous.According to the definition of above-mentioned contrast, if measure the contrast of display of organic electroluminescence in the darkroom, then minimum brightness levels off to zero, and contrast can level off to infinity and lose meaning.Therefore the contrast of display of organic electroluminescence is measured in bright chamber, the practice provides an ambient brightness and gives display of organic electroluminescence, when display of organic electroluminescence is not luminous, measure brightness that surround lighting caused after reflection with as minimum luminance value.Ambient brightness value in the present bright chamber adopts 500 luxs (lux, the international unit of illuminance) usually.
One of method that obtains preferable contrast is to reduce the brightness that the display of organic electroluminescence reflect ambient light is caused.Display of organic electroluminescence utilizes black matrix (black matrix) to reduce the light reflection to improve contrast usually.
Please refer to Figure 1A, existing display of organic electroluminescence 10 comprises that mainly an Organic Light Emitting Diode 11 and driving transistors 12 thereof are positioned at an active area (active area) 13.Organic Light Emitting Diode 11 has a bottom electrode 111, a top electrodes 112 and an organic luminous layer 113 and is folded between this two electrode 111,112.Driving transistors 12 comprises one source pole metal 121, a gate metal 122, a drain metal 123 and a channel layer 124.Separate with an interlayer dielectric layer (ILD) 125 between channel layer 124 and the gate metal 122.Channel layer 124 has one source pole contact zone 1241, a drain contact region 1242 and contacts with drain metal 123 with source metal 121 respectively.Drain metal 123 is in order to electrically connect the bottom electrode 111 of Organic Light Emitting Diode 11.
The part of active area 13 is covered by black matrix pattern and forms a black matrix district (black matrixarea) 131, and the part that is covered by black matrix pattern does not form an open region (open area) 132.As shown in the figure, the black matrix 15 that 131 inside, black matrix district have a patterning is formed on the substrate 14, and driving transistors 12 is positioned at the top of black matrix 15, has resilient coating 17, for example a silica between the two usually.Open region 132 is positioned at Organic Light Emitting Diode 11 belows and penetrates for light, and by a filter layer 18 coverings to determine irradiant color.The edge of filter layer 18 is corresponding about in the of 15 with black matrix with black light resistance layer 19.
It should be noted that existing open region 132 inside there is no antireflecting structure and are formed between substrate 14 and the Organic Light Emitting Diode 11,, can't effectively improve the panel contrast so that the reflectivity of display integral body still is higher than more than 20%.
Please refer to Figure 1B, it is the graph of a relation of reflectivity and black matrix district area percentage.The longitudinal axis is the reflectivity of display of organic electroluminescence to 550nm light among the figure, and transverse axis occupies the area percentage of active area 13 for black matrix district 131.Figure 1B shows when black matrix district 131 area occupied percentage in active area 13 heals when big, and reflectivity is littler.For example, when black matrix district 131 account for whole active area 13 areas 20% the time, reflectivity is about 60%; If the ratio of occupying in black matrix district 131 increases to 68%, reflectivity then reduces to 25%.
Still please refer to Figure 1A, in black matrix district 131 with the fixing situation of active area 13 area ratios under, the existing method that reduces reflectivity is that the light-emitting area at display of organic electroluminescence 10 adds an anti-reflective film 16.But thus, certainly will increase the thickness of display of organic electroluminescence 10, and reduce the light transmittance of open region 132 and reduce brightness.Therefore be necessary to develop not adding anti-reflective film and not influencing under the situation of brightness, increase the technology of contrast.
Summary of the invention
The object of the present invention is to provide a kind of display of organic electroluminescence and manufacture method thereof, anti-reflecting layer directly is formed between substrate and the Organic Light Emitting Diode, to increase contrast.
Display of organic electroluminescence manufacture method of the present invention may further comprise the steps.At first, form an anti-reflecting layer on a substrate.Then, form a light shield layer on this anti-reflecting layer, and to define this light shield layer be a first area and a second area.Remove this light shield layer in this first area subsequently to expose this anti-reflecting layer.One thin-film transistor is made in this second area of this light shield layer top, forms an Organic Light Emitting Diode this anti-reflecting layer top in this first area again.
With the display of organic electroluminescence that said method is made, its anti-reflecting layer is to be positioned at a substrate surface.This light shield layer is covered in this anti-reflecting layer top, and has a peristome with this anti-reflecting layer of exposed portion.This thin-film transistor is positioned at this light shield layer top.This Organic Light Emitting Diode then connects this thin-film transistor, and is positioned at this part anti-reflecting layer top that this peristome exposes to the open air.Because the present invention does not need anti-reflective film is attached at the display of organic electroluminescence outside, but with simplification and consistent technology are made in display of organic electroluminescence inside with anti-reflecting layer, therefore can under the situation that does not influence brightness, increase contrast and reduce display thickness.
Description of drawings
Figure 1A is existing display of organic electroluminescence;
Figure 1B is the graph of a relation of reflectivity and black matrix district area percentage;
Fig. 2 is a display of organic electroluminescence of the present invention;
Fig. 3 A-3E is a display of organic electroluminescence manufacture process of the present invention;
Fig. 4 A-4C is the anti-reflecting layer manufacture process with a plurality of sublayers;
Fig. 5 is the variation diagram of intensity of reflected light along with visible wavelength.
The primary clustering symbol description
10 display of organic electroluminescence, 22 thin-film transistors
11 Organic Light Emitting Diodes, 221 semiconductor layers
111 bottom electrodes, 2212 contact zones
112 top electrodes, 2214 contact zones
113 organic luminous layers, 222 gate insulators
12 driving transistorss, 223 grids
121 source metals, 224 source electrodes
225 drain electrodes of 122 gate metals
123 drain metal, 23 passivation layers
124 channel layers, 24 Organic Light Emitting Diodes
1241 source contact areas, 242 transparency electrodes
1242 drain contact region, 244 organic luminous layers
125 interlayer dielectric layers, 246 reflecting electrodes
13 active areas, 25 interlayer dielectric layers
131 black matrix districts, 26 substrates
132 open regions, 27 flatness layers
14 substrates, 28 anti-reflecting layers
15 black matrix 281 metal oxide layers
16 anti-reflective films, 282 metal nitride layer
17 resilient coatings, 29 light shield layers
18 filter layers, 292 peristomes
19 black light resistance layers, 294 first areas
20 display of organic electroluminescence, 296 second areas
21 walls, 40 display of organic electroluminescence
Embodiment
Existing conjunction with figs. describes display of organic electroluminescence of the present invention and manufacture method thereof in detail, and enumerates preferred embodiment and be described as follows.
Please refer to Fig. 2, it is the profile of display of organic electroluminescence of the present invention.Each dot structure of display of organic electroluminescence 20 comprises that a thin-film transistor 22 and an Organic Light Emitting Diode 24 are arranged on the substrate 26.Have an anti-reflecting layer 28 and a light shield layer 29 between thin-film transistor 22 and the substrate 26, but then lack light shield layer 29 between Organic Light Emitting Diode 24 and the substrate 26.Anti-reflecting layer 28 directly is formed at substrate 26 surfaces, and light shield layer 29 is covered in anti-reflecting layer 28 tops, and has a peristome 292 with exposed portion anti-reflecting layer 28.Organic Light Emitting Diode 24 is positioned at these part anti-reflecting layer 28 tops that peristome 292 is exposed to the open air.Thin-film transistor 22 is positioned at light shield layer 29 tops, in order to drive Organic Light Emitting Diode 24.
Thin-film transistor 22 has semi-conductor layer 221, a gate insulator 222, a grid 223, one source pole 224 and a drain electrode 225.The material of halfbody body layer 221 is amorphous silicon or polysilicon, and itself and source electrode 224 or 225 the contact zone 2212 and 2214 of draining are to impose heavy doping, the transistorized kind of visual film and select doped p type dopant material or n type dopant material.Gate insulator 222 intercepts between semiconductor layer 221 and grid 223, is generally an oxide layer.Grid 223, source electrode 224 and draining 225 separates with an interlayer dielectric layer (ILD) 25 each other.On source electrode 224 and drain electrode 225 is to make a passivation layer 23 with insulating material such as silicon nitride or silica.Passivation layer 23 has an open-work provides drain electrode 225 to contact with a transparency electrode 242 of Organic Light Emitting Diode 24 and the purpose that reaches driving Organic Light Emitting Diode 24.
Except transparency electrode 242, Organic Light Emitting Diode 24 still has an organic luminous layer 244 and a reflecting electrode 246.In the present embodiment, wall 21 is formed on passivation layer 23 and the part transparency electrode 242, separates in order to the Organic Light Emitting Diode 24 with the different pixels unit.Wall 21 also has the peristome 292 of the corresponding anti-reflecting layer of a peristome (not label), and organic luminous layer 244 and reflecting electrode 246 or electronics injection/transport layer (not shown), hole injection/transport layer (not shown) then are positioned among the peristome of wall 21.
Please refer to Fig. 3 A-3E, it is the manufacture method of display of organic electroluminescence.At first, form anti-reflecting layer 28 on substrate 26.Then, form light shield layer 29 on anti-reflecting layer 28, and definition light shield layer 29 is a first area 294 and a second area 296.Remove light shield layer 29 in the first area 294 subsequently to expose anti-reflecting layer 28.Thin-film transistor 22 is made in the second area 296 of light shield layer 29 tops, is formed with anti-reflecting layer 28 tops of OLED 24 in first area 294 again, to form display of organic electroluminescence 20 as Fig. 2.
As shown in Figure 3A, anti-reflecting layer 28 can be formed on the substrate 26 by holomorphism.Shown in Fig. 3 B, above anti-reflecting layer 28, but deposit metallic material or black photoresist and form light shield layer 29.Fig. 3 C-3D is depicted as the patterning process of light shield layer 29, provides a shielding (not shown) that light shield layer 29 is defined as first area 294 and second area 296 earlier, and the part light shield layer 29 in the etching first area 294 is to expose anti-reflecting layer 28 again.What deserves to be mentioned is, during light shield layer 29 in the etching first area 294, can control etch-rate and make the etch-rate of the etch-rate of light shield layer 29, so can obtain preferable etching efficiency and etch effect greater than anti-reflecting layer 28.Shown in Fig. 3 E, make in the process of thin-film transistor 22, gate insulator 222, interlayer dielectric layer 25 and passivation layer 23 cover its below structure sheaf usually comprehensively.
Control etched mode and comprise selection one suitable etchant with the control etch-rate, or the control etching period.Aspect the selecting for use of etchant, because light shield layer 29 be a metal, and anti-reflecting layer 28 is a metal oxide, so can select for use metal than tool corrosivity, and to the more not acrid etchant of metal oxide.In addition, also there is different etchants to select for different metals or different metallic compounds.When light shield layer 29 and anti-reflecting layer 28 contained metallic elements belong to gang, may be easier to choose suitable etchant.Thus, can control the etch-rate of the etch-rate of light shield layer 29 greater than anti-reflecting layer 28.Aspect the control etching period, when the light shield layer in the first area 294 29 removes fully, can stop etching, in order to avoid anti-reflecting layer 28 is also destroyed in the lump.Subsidiary one carries ground, and suitable selection etchant can shorten etching period.
Please refer to Fig. 4 A-4C, the step of above-mentioned formation anti-reflecting layer 28 also can comprise formation one metal oxide layer 281 in substrate 26 tops, and then forms a metal nitride layer 282 on metal oxide layer 281.One preferred embodiment in, the thickness of metal oxide layer 281 is greater than the thickness of metal nitride layer 282.As Fig. 4 B, downward etching light shield layer 29 is till metal nitride layer 282 exposes to the open air out in first area 294.In the display of organic electroluminescence 40 shown in Fig. 4 C, anti-reflecting layer 28 has a plurality of metal compound layers, and metal compound layer may be the compound of same metallic element with different nonmetalloids each other, or the combination of compounds of different metal element and identical nonmetalloid.Metallic element is as chromium, molybdenum, copper, zinc, indium, titanium, aluminium or silver etc.; Nonmetalloid is as nitrogen, oxygen or sulphur etc.
In the foregoing description, can in first area 294 and second area 296, form the combination of desired metal and metal oxide with consistent technology.When making black matrix near substrate 26 surfaces, the control etch-rate can make the combination that only stays the metallic compound multilayer film in the first area 294, and form so-called anti-reflecting layer 28, and reduce the reflectivity of display integral body by this, and then increase the contrast of display.With existing skill difference be, the present invention utilizes the difference of control etch-rate, use mask process one, 294 form the one or more layers anti-reflecting layer of forming 28 in the first area, it has the odd-multiple thickness of 1/4 visible wavelength, be used for lowering the external environment reflection of light, it can effectively increase the contrast ratio of display.
From the above, anti-reflecting layer 28 comprises a plurality of sublayers, for example metal oxide layer and metal nitride layer, its gross thickness preferably below 3000nm and greater than in the scope of 0nm to avoid influencing light transmittance.Concerning display of organic electroluminescence 20 or 40, the distance between reflecting electrode 246 (thickness that does not comprise reflecting electrode) and transparency carrier 26 (thickness that does not comprise transparency carrier) preferably also is the odd-multiple of 1/4 visible wavelength.
Please refer to Fig. 5, it is the variation diagram of intensity of reflected light along with visible wavelength.Transverse axis is optical wavelength (nm), and the longitudinal axis is intensity of reflected light (a.u.).Curve 51 is that the intensity of reflected light of general display of organic electroluminescence in visible wavelength range changes, greatly about between the 0.3a.u. to 0.9a.u..Curve 52 is that the intensity of reflected light of display of organic electroluminescence of the present invention in visible wavelength range changes, greatly about between the 0a.u. to 0.4a.u..Wherein, when intensity of reflected light is 1.0a.u., be that the expression visible wavelength is the situation of total reflection.
More than describing in detail is at the specifying of the preferred embodiment of the present invention, but the foregoing description is not in order to restriction protection scope of the present invention, does not allly break away from the equivalence that spirit of the present invention does and implements or change, all should be contained in protection scope of the present invention.
Claims (13)
1. the manufacture method of a display of organic electroluminescence may further comprise the steps:
One substrate is provided;
Form an anti-reflecting layer on this substrate;
Form a light shield layer on this anti-reflecting layer;
Defining this light shield layer is a first area and a second area;
Remove this light shield layer in this first area to expose this anti-reflecting layer;
Form a thin-film transistor this light shield layer top in this second area; And
Form an Organic Light Emitting Diode this anti-reflecting layer top in this first area.
2. the method for claim 1, the step of wherein above-mentioned formation one anti-reflecting layer comprises:
Form a metal oxide layer in this substrate top; And
Form a metal nitride layer on this metal oxide layer.
3. method as claimed in claim 2, wherein the thickness of this metal oxide layer is greater than the thickness of this metal nitride layer.
4. method as claimed in claim 3, the wherein above-mentioned step that removes this light shield layer in this first area is to be etched down to this metal nitride layer.
5. the method for claim 1, the step of wherein above-mentioned formation one light shield layer is for forming a metal level in this anti-reflecting layer top.
6. display of organic electroluminescence comprises:
One substrate;
One anti-reflecting layer is positioned at this substrate surface;
One light shield layer is covered in this anti-reflecting layer top, and has a peristome with this anti-reflecting layer of exposed portion;
One thin-film transistor is positioned at this light shield layer top; And
One Organic Light Emitting Diode connects this thin-film transistor, and is positioned at this part anti-reflecting layer top that this peristome exposes to the open air.
7. display of organic electroluminescence as claimed in claim 6, wherein this anti-reflecting layer gross thickness is below the 3000nm and greater than 0nm.
8. display of organic electroluminescence as claimed in claim 6, wherein this anti-reflecting layer comprises at least one metal compound layer.
9. display of organic electroluminescence as claimed in claim 8, wherein this metal compound layer is to be selected from oxide, nitride, sulfide and group that combination constituted thereof.
10. display of organic electroluminescence as claimed in claim 8, wherein the contained metallic element of this anti-reflecting layer is to be selected from the group that chromium, molybdenum, copper, zinc, indium, titanium, aluminium and silver are constituted.
11. display of organic electroluminescence as claimed in claim 6, wherein this light shield layer is a metal level.
12. display of organic electroluminescence as claimed in claim 6, wherein this light shield layer and this anti-reflecting layer contain the metallic element with gang.
13. display of organic electroluminescence as claimed in claim 6, wherein this anti-reflecting layer comprises a plurality of sublayers, and these a plurality of sublayers have the odd-multiple thickness of 1/4 wavelength under the visible wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510092304 CN1753586B (en) | 2005-08-26 | 2005-08-26 | Organic electroluminescence display device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510092304 CN1753586B (en) | 2005-08-26 | 2005-08-26 | Organic electroluminescence display device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1753586A true CN1753586A (en) | 2006-03-29 |
| CN1753586B CN1753586B (en) | 2011-08-24 |
Family
ID=36680210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510092304 Active CN1753586B (en) | 2005-08-26 | 2005-08-26 | Organic electroluminescence display device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1753586B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024843A (en) * | 2009-09-14 | 2011-04-20 | 卡西欧计算机株式会社 | Light emitting panel and manufacturing method of light emitting panel |
| CN103531610A (en) * | 2013-10-28 | 2014-01-22 | 京东方科技集团股份有限公司 | Bottom emission substrate, display device and manufacturing method of substrate |
| CN103681694A (en) * | 2013-12-06 | 2014-03-26 | 京东方科技集团股份有限公司 | Flexible display substrate and flexible display device |
| CN109148539A (en) * | 2018-08-29 | 2019-01-04 | 深圳市华星光电技术有限公司 | A kind of tft array substrate and preparation method, display device |
| WO2019114135A1 (en) * | 2017-12-11 | 2019-06-20 | 华为技术有限公司 | Display screen and terminal |
| WO2020037733A1 (en) * | 2018-08-21 | 2020-02-27 | 深圳市华星光电技术有限公司 | Array substrate and method for manufacture thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004303481A (en) * | 2003-03-28 | 2004-10-28 | Sanyo Electric Co Ltd | Light-emitting element and emission display device |
-
2005
- 2005-08-26 CN CN 200510092304 patent/CN1753586B/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024843A (en) * | 2009-09-14 | 2011-04-20 | 卡西欧计算机株式会社 | Light emitting panel and manufacturing method of light emitting panel |
| CN102024843B (en) * | 2009-09-14 | 2013-11-06 | 卡西欧计算机株式会社 | Light emitting panel and manufacturing method of light emitting panel |
| CN103531610A (en) * | 2013-10-28 | 2014-01-22 | 京东方科技集团股份有限公司 | Bottom emission substrate, display device and manufacturing method of substrate |
| US9583646B2 (en) | 2013-10-28 | 2017-02-28 | Boe Technology Group Co., Ltd. | Bottom-emitting substrate, display device and manufacturing method of substrate |
| CN103681694A (en) * | 2013-12-06 | 2014-03-26 | 京东方科技集团股份有限公司 | Flexible display substrate and flexible display device |
| US10644032B2 (en) | 2013-12-06 | 2020-05-05 | Boe Technology Group Co., Ltd. | Flexible display substrate and flexible display |
| WO2019114135A1 (en) * | 2017-12-11 | 2019-06-20 | 华为技术有限公司 | Display screen and terminal |
| WO2020037733A1 (en) * | 2018-08-21 | 2020-02-27 | 深圳市华星光电技术有限公司 | Array substrate and method for manufacture thereof |
| CN109148539A (en) * | 2018-08-29 | 2019-01-04 | 深圳市华星光电技术有限公司 | A kind of tft array substrate and preparation method, display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1753586B (en) | 2011-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11778847B2 (en) | Display panel, method for manufacturing same, and display device | |
| US7918704B2 (en) | Organic electroluminescent display panel and method for fabricating same | |
| KR101321878B1 (en) | Organic electro luminescent device | |
| KR102284344B1 (en) | TFT substrate and its manufacturing method, and OLED panel manufacturing method | |
| EP1471587B1 (en) | Organic electroluminescence display device | |
| US7619359B2 (en) | Organic electroluminescent display having sealant with grains and method for manufacturing the same | |
| US7692197B2 (en) | Active matrix organic light emitting display (OLED) and method of fabrication | |
| CN1708198A (en) | Organic light emitting device and method of fabricating the same | |
| CN1753586A (en) | Organic electroluminescence display device and its manufacturing method | |
| WO2019196166A1 (en) | Oled panel and manufacturing method therefor, and oled display | |
| KR101386310B1 (en) | Organic light emitting diode display device and method of manufacturing the same | |
| CN1719957A (en) | Double face display and making method thereof | |
| KR20190063620A (en) | Organic emitting light display device | |
| CN1828966A (en) | Organic light-emitting diode and display | |
| CN110071148A (en) | Organic LED display device and its manufacturing method | |
| CN109166892A (en) | Oled display substrate and its manufacturing method, OLED display panel | |
| KR20070037093A (en) | Organic light emitting display and fabrication method for the same | |
| CN112103398A (en) | Display panel | |
| CN108511623B (en) | Light extraction structure, display screen body, manufacturing method of display screen body and display device | |
| US11744123B2 (en) | Array substrate and display device with light blocking layer including scattering particles | |
| CN100552968C (en) | Pixel cell of electroluminescent display and preparation method thereof | |
| CN1776921A (en) | Organic luminous display | |
| JP7403540B2 (en) | Method for manufacturing organic microscreen pixels | |
| TWI750698B (en) | Display panel | |
| CN1688183A (en) | Organic electroluminance display structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |