CN1751371A - Image display device and its manufacturing method - Google Patents

Image display device and its manufacturing method Download PDF

Info

Publication number
CN1751371A
CN1751371A CN 200480004236 CN200480004236A CN1751371A CN 1751371 A CN1751371 A CN 1751371A CN 200480004236 CN200480004236 CN 200480004236 CN 200480004236 A CN200480004236 A CN 200480004236A CN 1751371 A CN1751371 A CN 1751371A
Authority
CN
China
Prior art keywords
chassis body
meron
image display
display unit
preceding substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 200480004236
Other languages
Chinese (zh)
Inventor
榎本贵志
横田昌広
山田晃义
海野洋敬
西村孝司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1751371A publication Critical patent/CN1751371A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

A vacuum envelope (10) of a flat display device comprises a front substrate (11) and a rear substrate (12) opposed to each other and a rectangular frame body (13) provided between respective peripheral portions of the front substrate and the rear substrate. The frame body has projections (18a, 18b, 18c, 18d) that protrude outward from individual corner portions. In manufacture, the projections are nipped and pulled outward, and the frame body is positioned with respect to the substrates and joined thereto with a longitudinal tension applied to each side of the frame body.

Description

Image display unit and manufacture method thereof
Technical field
The present invention relates to a kind of image display unit, comprising: substrate respect to one another, the chassis body between substrate and a plurality of pixel, and the manufacture method of this image display unit.
Background technology
In recent years, various flat panel display equipments are developed to follow-on light, the thin display device that replaces cathode ray tube (CRT).These flat panel display equipments comprise LCD (LCD), plasma panel (PDP), field-emitter display (FED), surface-conduction-electron emission display (SED) etc.In LCD, light intensity is to control by the orientation of utilizing liquid crystal.In PDP, make light-emitting phosphor by the ultraviolet ray that plasma discharge produced.In FED, make light-emitting phosphor by electron beam from the field-causing electron radiated element.In SED, make light-emitting phosphor by electron beam from the surface conductive electronic emission element.
For example at Japanese patent application KOKAI publication number: the FED described in the 2000-323074 has substrate and the meron relative with preceding substrate before predetermined gap usually.These substrates have the periphery that their chassis body by the rectangular frame form separately link together, thereby have constituted a vacuum casting.This shell needs the vacuum of high degree.For supporting role in meron and preceding on-chip air load, between these substrates, be provided with a plurality of support components.On the inner surface of preceding substrate, form a phosphor screen.On the inner surface of meron, be provided with and be used for the luminous a large amount of electronic emission elements of activating fluorescent body as electron emission source.Meron current potential on one side is that earthing potential and anode voltage Va are applied to phosphor screen basically.To add to the fluoroscopic red, green and blue look fluorophor of formation from the electron beam that electronic emission element sends, thereby make light-emitting phosphor and show an image.
According to such FED or SED, the size of electronic emission element is in micron dimension, and the thickness of display device can be reduced to several millimeter.When comparing with CRT as the display of existing TV or computer, so it can be done gentlyer and thinner, and power saving.
In above-mentioned FED, the inside of shell must keep high vacuum.Also be that this shell must fill up discharge gas after once vacuumizing in PDP.At Japanese patent application KOKAI publication number: proposed a kind of method among the 2000-229825, wherein constituted the preceding substrate of shell and meron and finally in the vacuum tank of shell measure that tiltedly is used to find time, assemble.
In the method, the subtend preceding substrate and the meron that at first are positioned at vacuum tank fully heats in advance.Doing like this is the gas of emitting from the inwall of shell in order to reduce, and this gas is the main cause that reduces the vacuum degree of shell.When substrate and meron before the cooling subsequently fully improve vacuum degree in the vacuum tank, on phosphor screen, form the getter film that one deck is used to improve and keep the vacuum degree of shell.Therefore, preceding substrate and meron are heated to the temperature that encapsulant melts once more, and when cooling off them, at the precalculated position joint encapsulant are solidified preceding substrate and meron.
Adopt the vacuum casting of method manufacturing thus, the encapsulation process double as is that Vacuum Package is handled, and comes to discharge by blast pipe the gas of enclosure when not required.In addition, can obtain very satisfied vacuum degree.
Yet when assembling in a vacuum, the program in the encapsulation process is multiple, comprising: heating, position alignment and cooling, and encapsulant melt and solidificating period before substrate and meron must on the precalculated position, continue maintenance for a long time.In addition, also have the productivity relevant with sealing and the problem of feature, substrate and meron are easy to suffer thermal expansion and thermal contraction to make to be heated and to cool off the precision that has reduced aligning when sealing at them before making.
In addition at Japanese patent application KOKAI publication number: described a kind of method (conduction heating) among the 2002-319346, substrate before the low-melting-point metal encapsulant of fusing is inserted at a lower temperature that wherein will be such as indium and the space between the chassis body are melted with heating and with the Joule heat of formation conductive seal material power supply itself.According to the method, the cooling substrate never needs the very long time, thereby can at short notice substrate be bonded together the composition shell.
Yet, before flowing inevitably, encapsulant in heat treated, melts low-melting-point metal by using the method, make the conduction heating comprise uneven heating thereby abundance is partly distributed according to the position.When low-melting-point metal melted, the electric current that provides can make low-melting-point metal partly disconnect in addition.
Because the indium of substrate and fusing seals together, Rong Hua indium may spill in the viewing area or the lead-in wire zone around the substrate of substrate inside in addition.For head it off, for example can allow the indium of fusing overflow definitely, because substrate is sealed by the angle part of substrate.Yet, if the size of substrate is big more, near the difficult more angle part of shifting to substrate of indium each limit core of substrate.In some cases, indium can by by way of the sealing area of hope be spilled over to the inside or the outside of substrate.If indium overflows, its can go between on the substrate etc. in contact, thereby causes short circuit etc.Therefore inevitably, thus must guarantee that the indium that the big width of chassis body will overflow is limited in the width of chassis body.Yet, in dull and stereotyped image display unit, any other parts outside the viewing area, promptly the picture frame part around the viewing area is preferably narrow as much as possible, and the width of chassis body and sealed width are minimized.
In FED, the chassis body before being arranged between substrate and the meron is very narrow and extremely thin, and for example about 1mm is thin.When each the peripheral portion timesharing that chassis body is engaged to substrate, therefore the manufacture process middle frame main body at FED is difficult to support and easily deformable, needs the time thereby locate it.Simultaneously when the supporting frame main body, the crooked or distortion of each core on the limit of this chassis body, thus can not easily accurately locate this chassis body.These problems increase the index time during the manufacturing and must increase cost.Therefore, wish to improve early.
Summary of the invention
Consider that these situations have made the present invention, and its objective is a kind of image display unit that preceding substrate and meron are carried out quick and stable sealing and have satisfied vacuum degree can guaranteed is provided, and manufacture method.
In order to realize this purpose, according to an aspect of the present invention, a kind of image display unit is provided, has comprised: had preceding substrate and the meron relative and between each periphery of preceding substrate and meron, be provided with the shell of a rectangular frame main body with preceding substrate; With a plurality of pixels that form in this shell, this chassis body has from each angle part outwards outstanding and nipped ledge on the direction parallel with the limit of framework.
According to a further aspect in the invention, a kind of manufacturing image display unit method is provided, and this image display unit comprises: have preceding substrate and the meron relative with preceding substrate and be provided with the shell of a rectangular frame main body between each periphery of preceding substrate and meron; With a plurality of pixels that form in this shell, this method comprises: the form with the rectangular frame that has outside each angle outstanding ledge is prepared chassis body; Clamp and be pulled outwardly the ledge of this chassis body, thereby on its longitudinal direction, a tension force is added to each limit part of chassis body; And use the tension force that applies that kept at least one in substrate and the meron with the chassis body location and before being engaged to.
Image display unit and this image display unit manufacture method according to constituting in this way are provided with ledge on each angle of chassis body, make to assign to easily support this chassis body by clamping protuberance.Simultaneously, apply that a longitudinal force can remain on each limit part of chassis body flat condition and stable shape and without any distortion or distortion by ledge being pulled outwardly with each limit part to chassis body.Therefore, can at short notice chassis body be positioned at exactly on the precalculated position with respect to preceding substrate or meron.Therefore, a kind of stable engagement of guaranteeing chassis body be can provide, image display unit and manufacture method thereof that manufacturing cost and stable and satisfied image show reduced.
According to a further aspect in the invention, a kind of image display unit is provided, comprise: have the shell of preceding substrate and the meron relative, at the conductive frame main body and the encapsulant between chassis body and preceding substrate or meron so that preceding substrate and meron are bonded together between the periphery separately of preceding substrate and meron with preceding substrate, this chassis body have a plurality of with the surperficial perpendicular direction of preceding substrate on penetrated formed through hole of chassis body or slit.
According to a further aspect in the invention, a kind of manufacture method of image display unit is provided, this image display unit comprises: have the shell of preceding substrate and the meron relative with preceding substrate, at the conductive frame main body and the encapsulant between chassis body and preceding substrate or meron so that preceding substrate and meron are bonded together between the periphery separately of preceding substrate and meron, this method comprises:
Prepare chassis body, this chassis body have a plurality of with the surperficial perpendicular direction of preceding substrate on penetrated formed through hole of chassis body or slit; Preceding substrate and meron are arranged to toward each other; Before chassis body is arranged between the outer edge part of the inner surface separately of substrate and meron and, and a conductive seal material is arranged in the outer edge part of inner surface separately of frame part and preceding substrate and meron between at least one with the covering whole circumference along the outer edge part separately of preceding substrate and meron; Come the heating frame main body by power supply, take this fusing or softening encapsulant, preceding substrate and meron are pressed to each other, and the outer edge part separately of preceding substrate of sealing and meron.
According to the image display unit and the manufacture method thereof that constitute in this way, chassis body is provided with through hole or slit, thereby can make the resistance of chassis body be higher than the chassis body that does not have through hole or slit.Therefore, can reduce because of heating and add to the electric current of encapsulant and chassis body with simplified apparatus structure or electrode structure.Alternatively, the width that can widen chassis body seals reliability thereby improve, although can use and traditional same electric current to increase engaging zones.
According to said structure, can make chassis body lower significantly in the elasticity that is parallel on the direction of substrate.Therefore, can alleviate by heating or environment temperature and change the chassis body cause and the pressure that thermal expansion difference produced between the substrate, and can be with the position alignment of little tension force with chassis body and hope.
According to above structure, in addition, the surface area of chassis body can be made bigger than its volume, thereby can improve the confining force of encapsulant.If encapsulant melts in difference levelness condition setting during manufacture, advantage is easily encapsulant to be distributed in partly on the chassis body or flows.Because reduced the thermal capacity of framework with through hole or slit respective edges, heating and cooling chassis body easily at short notice when being subjected to the conduction heating.
According to an aspect of the present invention, a kind of image display unit is provided, comprise: have the shell of preceding substrate and the meron relative with preceding substrate, at the conductive frame main body and the encapsulant between chassis body and preceding substrate or meron so that preceding substrate and meron are bonded together between the periphery separately of preceding substrate and meron, this chassis body has four ledges outstanding outside four angles and at least one is from the outwards outstanding ledge of limit part.
According to a further aspect in the invention, a kind of method of making image display unit is provided, this image display unit comprises: have the shell of preceding substrate and the meron relative with preceding substrate, at the conductive frame main body and the encapsulant between chassis body and preceding substrate or meron so that preceding substrate and meron are bonded together between the periphery separately of preceding substrate and meron, this method comprises:
Prepare chassis body, this chassis body has four ledges outstanding outside four angles and at least one is from the outwards outstanding ledge of limit part; Preceding substrate and meron are arranged to toward each other; Before chassis body is arranged between the outer edge part of the inner surface separately of substrate and meron and, and a conductive seal material is arranged in the outer edge part of inner surface separately of frame part and preceding substrate and meron between at least one with the covering whole circumference along the outer edge part separately of preceding substrate and meron; The ledge of chassis body is located at least one closes up in the outer edge part of the inner surface separately of substrate and meron forward, thereby chassis body is located with the precalculated position; Locate the back in chassis body and come the heating frame main body, take this fusing or softening encapsulant, preceding substrate and meron are pressed to each other by power supply, and the outer edge part separately of preceding substrate of sealing and meron.
According to the image display unit and the manufacture method thereof that constitute in this way, can switch on fusing or softening encapsulant to the conductive frame main body, thereby preceding substrate and meron can be bonded together.If a large amount of sealant portion ground distributes or encapsulant fusing during powering, then the conductive frame main body can reduce or reduce the possibility of inhomogeneous heating or disconnection.In addition, can be with chassis body being fixed on the substrate from four angles and the outstanding ledge of limit part.If power supply makes the chassis body thermal expansion, then can prevent distortion or distortion, and can keep the chassis body precalculated position.Therefore, substrate and meron before can sealing fast and stably, thus image display unit and the manufacture method thereof with satisfied vacuum degree can be provided.
According to an aspect of the present invention, a kind of image display unit is provided, comprise: have preceding substrate and the shell of the meron relative and the hermetic unit that the outer edge part separately of preceding substrate and meron is sealed with preceding substrate, sealing partly comprises chassis body and the encapsulant that extends along the outer edge part separately of preceding substrate and meron, this chassis body has a cross section makes in the outer surface of chassis body and preceding substrate and the meron space between at least one the inner surface change on the Width of chassis body, and the sealing material is arranged in chassis body and the substrate between the inner surface of at least one.
According to a further aspect in the invention, a kind of method of making image display unit is provided, this image display unit comprises: have preceding substrate and the shell of the meron relative with preceding substrate and the hermetic unit that the outer edge part separately of preceding substrate and meron is sealed, this method comprises:
In the outer edge part of the inner surface separately of preceding substrate and meron, form a sealing material layer to cover whole circumference at least one; There are the preceding substrate of sealing material layer and meron to be arranged to toward each other with top; Before will being arranged on along the chassis body that the outer edge part separately of preceding substrate and meron is extended between the outer edge part of the inner surface separately of substrate and meron, the space that this chassis body has between the outer edge part that a cross section partly makes the inner surface of at least one in the outer surface of chassis body and preceding substrate and the meron changes on the longitudinal direction of chassis body, the heated sealant material layer is with fusing or softening encapsulant, preceding substrate and meron are pressed to each other, and the outer edge part separately of preceding substrate of sealing and meron.
According to the image display unit and the manufacture method thereof that constitute in this way, when the preceding substrate of wanting sealing-in and meron is bonded together and the broad zone of encapsulant between substrate and chassis body of pressurized fusing under setting pressure the time in mobile.Therefore, can seal and do not allow the encapsulant of fusing be spilled over to image displaying area territory or lead-in wire zone or can not cause any trouble such as lead short circuit.Simultaneously, consider that overflowing of encapsulant needn't guarantee big sealed width, so just can obtain a narrow framework image display unit.
Description of drawings
Fig. 1 is the cutaway view that illustrates according to the FED of the first embodiment of the present invention;
Fig. 2 is the cutaway view of the FED of substrate separation before illustrating;
Fig. 3 is along the cutaway view of the line III-III of Fig. 1;
Fig. 4 is the plane graph that the chassis body of FED is shown;
Fig. 5 is the fluoroscopic plane graph that FED is shown;
Fig. 6 is schematically illustrated in the vaccum processor figure that uses in the manufacturing of FED;
Fig. 7 is the cutaway view that preceding substrate, chassis body and meron mutual relative state in vaccum processor is shown;
Fig. 8 is the cutaway view that is illustrated in the state between preceding substrate, chassis body and the meron that in the vaccum processor metallic plate electrode is arranged on;
Fig. 9 illustrates the cutaway view that the metallic plate electrode is remained on the amplification of the state between meron and the chassis body;
Figure 10 is the plane graph that illustrates according to of the present invention one chassis body of revising;
Figure 11 is the plane graph that illustrates according to the chassis body of another modification of the present invention;
Figure 12 is the plane graph that illustrates according to the chassis body of another modification of the present invention;
Figure 13 is the perspective view that the appearance of FED according to a second embodiment of the present invention is shown;
Figure 14 is the cutaway view of structure of meron one side that the FED of Figure 13 is shown;
Figure 15 is the cutaway view along the FED of the line XV-XV of Figure 13;
Figure 16 is the amplification view of a part that the chassis body of FED is shown;
Figure 17 is the cutaway view of substrate and meron state respect to one another before being illustrated in the manufacture process of FED;
Figure 18 is the plane graph that the chassis body of example 2 of the present invention is shown;
Figure 19 is the cutaway view of the chassis body of example 2;
Figure 20 is the plane graph that the chassis body of example 3 of the present invention is shown;
Figure 21 is the plane graph that the chassis body of example 4 of the present invention is shown;
Figure 22 is the plane graph that the chassis body of example 5 of the present invention is shown;
Figure 23 is the perspective view of appearance that the FED of a third embodiment in accordance with the invention is shown;
Figure 24 is the perspective view of structure that meron one side of a third embodiment in accordance with the invention is shown;
Figure 25 is the cutaway view along the FED of the line XXV-XXV of Figure 23;
Figure 26 is the plane graph of amplification of a part that the chassis body of FED is shown;
Figure 27 is the plane graph that the state on the meron that chassis body is installed in according to the 3rd embodiment is shown;
Figure 28 is the plane graph that illustrates according to the chassis body of example 6 of the present invention;
Figure 29 is the plane graph that illustrates according to the chassis body of example 7 of the present invention;
Figure 30 is the perspective view that the FED of a fourth embodiment in accordance with the invention is shown;
Figure 31 is the perspective view that the FED that breaks away from according to substrate before the 4th embodiment is shown;
Figure 32 is the cutaway view along the line XXXII-XXXII of Figure 30;
Figure 33 is the cutaway view of substrate and meron state respect to one another before being illustrated in the manufacture process of FED;
Figure 34 is first cutaway view of revising that the frame structure of the 4th embodiment is shown;
Figure 35 is second cutaway view of revising that the chassis body of the 4th embodiment is shown;
Figure 36 is the 3rd cutaway view of revising that the chassis body of the 4th embodiment is shown;
Figure 37 is the 4th cutaway view of revising that the chassis body of the 4th embodiment is shown;
Figure 38 is the 5th cutaway view of revising that the chassis body of the 4th embodiment is shown;
Figure 39 is the 6th cutaway view of revising that the chassis body of the 4th embodiment is shown.
Embodiment
Describe first embodiment that image display unit of the present invention is used for FED below with reference to accompanying drawings in detail.
Shown in Fig. 1-4, this FED comprise each by rectangular glass forms also between before the gap of 1mm is respect to one another substrate 11 and meron 12.The diagonal-size of each substrate is for example 10 inches.Meron 12 is pulled out a plurality of leads that is used for incoming video signal greater than preceding substrate 11 from the periphery of meron.Before substrate 11 and meron 12 have their passing through the outer edge part that the rectangular frame main body 13 as sidewall is bonded together and constituting the rectangular vacuum shell 10 that a flat inside keeps vacuum state separately.
Chassis body 13 has individually at the direction that is parallel to diagonal axes 37 and 38 ledge 18a, 18b, 18c and the 18d outwards outstanding from its angle part.With encapsulants such as low-melting-point metal 21 chassis body 13 is sealed to meron 12 and preceding substrate 11.
In the state that seals, ledge 18a, 18b, 18c and the 18d of chassis body 13 be the past substrate 11 outside angles of giving prominence to and extending close meron 12 individually.As described below, ledge 18a, 18b, 18c and 18d can be as support sector's positioning framework main bodys of assigning in the manufacture process of FED.
Shown in Fig. 2 and 3, a plurality of tabular spacers 14 as supporter are arranged in vacuum casting 10, be used to bear the air pressure that acts on preceding substrate 11 and meron 12.These spacers 14 be provided with the minor face of vacuum casting 10 with paralleling and with direction that long limit parallels at interval.Spacer 14 is not limited to this shape, for example can also use tubular spacer etc.
On the inner surface of preceding substrate 11, form phosphor screen 16 shown in Figure 5.Phosphor screen 16 be by with red, green and blue bar shaped fluorescence coating R, G, B and be arranged between these fluorescence coatings tiltedly not luminous component black light gettering layer 20 form.This fluorescence coating extend with the minor face of vacuum casting 10 with paralleling and with direction that long limit parallels at interval.With the getter film 27 of the metal gasket 17 for example formed by aluminium lamination and barium mutual superposition successively on phosphor screen 16.
Be arranged on as shown in Figure 3 on the inner surface of meron 12 is a large amount of as sending electron beam separately and activating the electronic emission elements 22 of the fluorescence coating of phosphor screen 16.These electronic emission elements 22 are arranged in respectively and the corresponding a plurality of row of pixel and a plurality of row.More particularly, on the inner surface of meron 12, form conductive cathode layer 24.On this conductive cathode layer, form the insulation film 26 that one deck has a large amount of holes 25.On insulation film 26, form the gate electrode 28 of molybdenum, niobium etc.On the inner surface of meron 12, the taper electronic emission element 22 of molybdenum etc. is separately positioned in the hole 25.
In the FED that constitutes in this way, vision signal is input to electronic emission element 22 and the gate electrode 28 that forms simple matrix.According to electronic emission element 22, when brightness is the highest, apply+grid voltage of 100V.The voltage of+10kV is added to phosphor screen 16.Therefore, from electronic emission element 22 divergent bundles.Regulate the intensity of the electron beam that sends from electronic emission element 22 by the voltage of gate electrode 28.When the fluorescence coating of electron beam activation phosphor screen 16 is luminous, show an image.
Be to the detailed description of the manufacture method of the FED of formation in this way below.
At first, phosphor screen is added on the plate glass that forms preceding substrate 11.Prepare and preceding substrate 11 the same big plate glass, and on this plate glass, form a fluorescence bar pattern with draught machine.There are the plate glass of fluorescence bar pattern and the plate glass that is used for preceding substrate to be arranged on positioning fixture with top, beginning exposure stage and exposure and development, thereby formation phosphor screen.Then, a kind of metal gasket of aluminium film forms, is superimposed upon on this phosphor screen 16.
On the other hand, be used for forming electronic emission element 22 on the plate glass of meron.In the case, forming conductive cathode layer 24 also forms silica membrane on the conductive cathode layer by for example thermal oxidation method, CVD method or sputtering method insulation film 26 on the plate glass.
After this, on insulation film 26, be formed for forming the molybdenum of gate electrode or the metallic film of niobium by sputtering method or electron-beam vapor deposition method.Then, the resist pattern of the gate electrode respective shapes that on this metallic film, forms and will form by photoetching process.This resist pattern is passed through wet etch method or dry ecthing method etching metal film as mask, thereby form gate electrode 28.
Then this resist pattern and gate electrode are passed through wet etch method or dry ecthing method etching insulation film 26 as mask, thereby form hole 25.After removing resist pattern, by on gate electrode 28, form the separator of aluminium for example or nickel on the direction that becomes given angle on surface by the electron beam vapour deposition with meron 12.After this, the material (for example molybdenum) that will be used to form negative electrode by electron-beam vapor deposition method is deposited on the surface of meron 12 with meeting at right angles.Thereby form electronic emission element 22 respectively in inside, hole.Then, by peel off method remove separator with and go up formed metallic film.
In addition, seal plate shape spacer 14 on meron 12 with low-melting glass.To add to the surface of the sealing of the preceding substrate 11 of the meron 12 that has sealed spacer 14 in the above described manner, top formation phosphor screen 16 and chassis body 13 as the indium of encapsulant 21.In the case, indium is added on two surfaces of the outer edge part separately of meron 12 and preceding substrate 11 and chassis body.After this, they have given interval in the centre toward each other when they are put into vaccum processor 100.For example, vaccum processor shown in Figure 6 100 is used for above-mentioned series processing.
Vaccum processor 100 has the feed compartment 101 that is arranged side by side with specified order, bakes and electron beam clean room 102, cooling chamber 103, the vapour deposition chamber 104 that is used for getter film, assembly chamber 105, cooling chamber 106 and relief chamber 107.Each of these chambers all constitutes the vacuum treated process chamber of energy, and all these chambers all are evacuated during making FED.Per two adjacent process chambers link to each other by valve etc.
Above-mentioned meron 12, chassis body 13 and preceding substrate 11 are placed into feed compartment 101, and form to be transported to after the vacuum in feed compartment 101 and bake and electron beam clean room 102.Bake with electron beam clean room 102 in, preceding substrate, meron and chassis body are heated to 350 ℃ temperature, to discharge the gas that these element surfaces are absorbed.
In addition when heating element, be attached to bake with electron beam clean room 102 on the electron beam generator (not shown) one electron beam is added to before the phosphor screen surface of substrate 11 and the electronic emission element surface of meron 12.Because be installed in the deflector of electron beam generator outside this electron beam deflecting is used for scanning, can all cleans phosphor screen surface and electronic emission element surface with electron beam.
After heating and electron beam cleaning, preceding substrate, meron and chassis body are transported to cooling chamber 103 and are cooled to for example about 100 ℃ temperature.Then, preceding substrate, meron and chassis body are transported to vapour deposition chamber 104 and are used to form getter film, thereby form titanate thin film as getter film by vapour deposition in the outside of metal gasket 17.Because this titanate thin film can prevent that the surface from being made dirty by oxygen or carbon, so can keep active state.
Subsequently, meron 12, chassis body 13 and preceding substrate 11 are transported to assembly chamber 105.In this assembly chamber 105, as shown in Figure 7, preceding substrate and meron 12 are being supported toward each other by roasting plate 131 and 132 respectively in assembly chamber.In addition, as shown in Figure 4, chassis body 13 is pulled outwardly, clamps ledge 18a, 18b, 18c and the 18d of chassis body 13 with the clamp mechanism (not shown) along diagonal axes 37 and 38.Therefore, tension force is added to the long limit and the short side part of chassis body longitudinally.Therefore, chassis body 13 can keep smooth and given shape and indeformable or distortion when they remain between preceding substrate 11 and the meron 12.
After flat metallic plate electrode 134 inserted between meron 12 and the chassis body 13 with each as shown in Figure 8, chassis body descended to meron.When allowing meron 12 and chassis body 13 mutually when making gap between them for about 1mm, chassis body is located with respect to meron.After it was finished, chassis body 13 was maintained under the outside tension force on the angular direction, made it keep stable even shape during localization process and not crooked or distortion.Therefore, chassis body 13 can be located easily and exactly with respect to meron 12.Because ledge 18a, 18b, 18c and 18d are outwards outstanding from chassis body 13, even use these ledges also can easily clamp in assembly chamber 105, transport and positioning framework main body 13.
After finishing the location, chassis body 13 further descends.Metallic plate electrode 134 is sandwiched between encapsulant 21 on the chassis body 13 and the encapsulant 21 on the meron 12 and touches encapsulant shown in Figure 9 simultaneously.
After another metallic plate electrode (not shown) that will have and above-mentioned metallic plate electrode is identical shaped inserted between chassis body 13 and the preceding substrate 11, preceding substrate descended to chassis body.Current substrate 11 and chassis body 13 is mutually when making gap between them for about 1mm, with respect to the preceding substrate 11 in meron 12 location.After the location, preceding substrate 11 further descends, and the metallic plate electrode is sandwiched between encapsulant 21 on the chassis body 13 and the encapsulant 21 on the preceding substrate 11 and with the sealing material and contacts.
Then, the direct current of 140A is applied to metallic plate electrode 134 and other metallic plate electrode, substrate 11 and meron 12 before pressure that will about 50kgf from both sides is applied to.Therefore, this electric current flows through the indium as encapsulant 21, thereby indium is heated and melts.Therefore, with indium preceding substrate 11, meron 12 and chassis body 13 are bonded together and form vacuum casting.
After the shell that will form in this mode in cooling chamber 106 is cooled to normal temperature, by relief chamber 107 with its taking-up.In handling, these finish FED.
According to the FED that constitutes in this way and the manufacture method of image display unit, the combination by carrying out flood roasting and electron beam cleaning with sealing meron 12, chassis body 13 and preceding substrate 11 in a vacuum is the gas of release surface absorption fully.Therefore, can keep satisfied gas absorption effect and not oxidation getter film.Because chassis body 13 is provided with ledge 18a, 18b, 18c and the 18d that can clamp, even in vacuum equipment, also can clamp chassis body 13 easily and transport.Simultaneously, in seal process can by clamp and be pulled outwardly ledge 18a, 18b, 18c and 18d and be applied to its each limit part tension force supporting frame main body 13 chassis body 13 is remained on stable shape and indeformable or the distortion.Therefore, chassis body 13 can be located easily and exactly with respect to substrate.Therefore, can finish seal operation at short notice, thereby can reduce manufacturing cost and can improve large-scale production power.Because engage frame main body stably, the FED that obtains can enjoy stable satisfied image and show.
In the situation of above-mentioned first embodiment, the side of being, angle part of chassis body 13.Yet the present invention also can be used for the situation that the angle part is an arc.In this case, as shown in figure 10, the intersection point 46 that the inboard of chassis body 13 is extended also will connect the line on relative summit respectively as diagonal axes 37 and 38 as the summit.Ledge 18a, 18b, 18c and 18d are protruding along diagonal axes 37 and 38 from the angle part of chassis body 13.In the manufacturing of FED,, longitudinal force is applied to its limit part comes positioning framework main body 13 by clamping and be pulled outwardly ledge 18a, 18b, 18c and 18d as the situation of above embodiment.Ledge 18a, 18b, 18c and the 18d of the chassis body that forms 13 can extend with the long limit of chassis body from each angle part of chassis body as shown in figure 11 with paralleling, or extends with the minor face of chassis body from each angle part of chassis body as shown in Figure 2 with paralleling.Under any situation, as above first embodiment, the long leg that ledge 18a, 18b, 18c and 18d are clamped and are pulled outwardly longitudinal force is applied to chassis body 13 divides or short side part.Therefore, easily and exactly the positioning framework main body and indeformable or the distortion.In addition, can obtain with first embodiment identical functions and the effect from the modification shown in Figure 10-12.
In first embodiment, can putting into vaccum processor with respect to chassis body or substrate positioning framework main body and chassis body, to utilize electrode be the electrode that is attached to on-chip encapsulant power supply.Can be in any other air ambient beyond the vacuum engaged and sealing component parts.
Be the detailed description of the FED of the second embodiment of the present invention below.
Shown in Figure 13-15, substrate 11 and meron 12 before FED comprises are formed as insulating substrate and staggered relatively by rectangle glass, have the 1-2mm gap in the middle of them.Before substrate 11 and meron 12 have be bonded together by conduction rectangular frame main body 13 they separately outer edge part and constitute the rectangular vacuum shell 10 that a smooth inside keeps vacuum state.In the present embodiment, with conductive seal material 21a (following) composition surface of chassis body 13 with the outer edge part of the inner surface that is positioned at preceding substrate 11 is bonded together, and the composition surface on the outer edge part of the inner surface of chassis body 13 and meron 12 is bonded together with encapsulant 21b.The sealing material is preferably at 300 ℃ or following fusing or softening material, and the low-melting-point metal such as indium, indium alloy can be used for this material.Can be in advance one in composition surface and the chassis body 13 be engaged with low melting point encapsulant such as the glass of sintering.
Chassis body 13 has the ledge 18a that gives prominence to from the angle part respectively.These ledges are as electrode and the support part that is used to support and locate this chassis body during manufacture.Can add single electrode and replace providing ledge 18a.
Shown in Figure 14,15 and 16, chassis body 13 has latticed a plurality of through holes 30 into the net and a plurality of slit 32 of opening in the side of chassis body is set.Substrate 11 and meron 12 form through hole 30 and slit 32 before passing respectively with their surface with meeting at right angles, and they with given be disposed on chassis body 13 around.Chassis body 13 is that 500 ℃ or above material form by fusing point preferably, and the material that comprises at least one element among Ti, Fe, Cr, Ni, Al and the Cu can be used for it.
Shown in Figure 14 and 15, a plurality of tabular spacers 14 are set in vacuum casting 10 in order to bear the air pressure that acts on preceding substrate 11 and the meron 12.These spacers 14 are arranged to parallel with the minor face of vacuum casting 10 and be separated by with given interval on the direction parallel with long limit.Spacer 14 is not limited to this shape, for example can also use tubular spacer etc.In first embodiment, phosphor screen 16, metal gasket 17 and the getter film 27 mutual superposition ground on the inner surface of preceding substrate 11 with fluorescence coating R, G and B and light gettering layer forms.
As shown in figure 15, in a large number be arranged on the inner surface of meron 12 as drive the electron emission source that electronics activates them facing to fluorescence coating R, G and B.Electronic emission element 22 is positioned at the position relative with B with each fluorescence coating R, G, and to they corresponding fluorescence coating divergent bundles.The lead-in wire 19 that in a large number drive signal is offered electronic emission element 22 forms a matrix on the inner surface of meron 12.The end separately of lead-in wire 19 pulled on the outer edge part of meron.
Below be manufacture method and the manufacturing installation of the FED that constitutes in this way.
At first, the preceding substrate 11 of preparation has within it the surface and goes up the phosphor screen 16 that forms, and as the indium of encapsulant 21a with the shape of framework be dispersed in be positioned at before on the composition surface of the inner surface of substrate and fluoroscopic outside.The meron of being prepared 12 has a large amount of surfaces within it and goes up the electronic emission elements that form, and assembly process added be used to guarantee before the spacer 14 in gap between substrate 11 and the meron 12.As the indium of encapsulant 21b with the shape of framework be dispersed in be positioned at before on the peripheral portion composition surface exceptionally of the inner surface of substrate 12 and electronic emission element 22.In addition, conductive frame main body 13 covers on the indium.Each the ledge 18a that is used as electrode integrally forms in four angle parts of chassis body 13 in advance, and the electric current that heats by these electrode conduction flows through.After chassis body is with respect to the indium aligning that adds on the meron 12, respectively each ledge 18a is fixed to four angles of meron 12.
In the case, preceding substrate 11 and meron 12 can load indium.Yet alternatively, chassis body 13 can be loaded indium, or preceding substrate 11, meron 12 and chassis body are loaded respectively.
Then, when keeping their composition surfaces separately relative with anchor clamps etc. as shown in figure 17, make chassis body 13 be placed on meron 12 and preceding substrate 11 on the encapsulant 21a to give set a distance relative and establish.After finishing, preceding substrate 11 for example face up places the below of meron 12.Under this state, preceding substrate 11 and meron 12 are put into vaccum processor.As first embodiment, vaccum processor shown in Figure 6 is as this vaccum processor.
At first, preceding substrate 11 and meron 12 being put into feed compartment 101 and after feed compartment forms vacuum they being transported to cures and electron beam clean room 102.Cure with electron beam clean room 102 in, preceding substrate 11 and meron 12 are obtaining about 10 -5Condition of high vacuum degree the time by the heating fully the degassing.On request heating-up temperature is set to about 200 ℃ to 500 ℃.Do like this is in order to reduce to emit from the inwall of the vacuum casting that obtains that reduces vacuum degree the speed of gas, to reduce characteristic to prevent residual gas.
In addition when curing with electron beam clean room 102 in during heating element, the phosphor screen surface of substrate 11 and the electronic emission element surface of meron 12 before being attached to the electron beam generator (not shown) that cures with electron beam clean room 102 electron beam being added to.Because this electron beam scans by the deflector that is installed in the electron beam generator outside, can clean phosphor screen surface and electronic emission element surface fully with electron beam.
After heating and electron beam cleaning, preceding substrate 11 and meron 12 are transported to cooling chamber 103 and are cooled to for example about 100 ℃ temperature.Then, preceding substrate 11 and meron 12 are transported to the vapour deposition chamber 104 that is used for getter film, thereby on phosphor screen and metal gasket, form titanate thin film as getter film by vapour deposition.This titanate thin film can prevent that oxygen or carbon from besmirching the surface, thereby keeps activated state.
Then, in assembly chamber 105, make phosphor screen 16 towards electronic emission element 22 preceding substrate 11 and meron 12 hi-Fixs and mutual superposition.After finishing, encapsulant 21a before chassis body 13 is clipped on the outer edge part of substrate 11 and the outer edge part of meron 12 on encapsulant 21b between, and with each ledge 18a that goes out from four cornicults of chassis body 13 with lateral electrode be set contact.
Under this state, thus by ledge 18a with given electric current add to chassis body 13 and encapsulant 21a with the indium heating to dissolve, preceding substrate 11 and meron 12 are pressed to each other.Add by power supply at this and to pine for, main heating frame main body 13 and encapsulant 21a and 21b, realizing heating at short notice, and the additional thermal expansion of substrate 11 and meron 12 before being difficult for taking place.If stop power supply, then heat from chassis body 13 and encapsulant 21a and 21b thermal diffusion to preceding substrate 11 or meron 12.Therefore, cool off and solidify indium to finish sealing at short notice.
After the vacuum casting 100 that will form in this way in cooling chamber 106 is cooled to normal temperature, by relief chamber 107 with its taking-up.In handling, these finish FED.
According to the FED that constitutes in this way, chassis body 13 has latticed through hole 30 into the net and slot 32 is set.Therefore, can make the resistance ratio of chassis body 13 not have the chassis body height in through hole 30 and crack 32.Therefore, chassis body 13 is limited to narrow width in order to avoid resistance is too low, so can increase frame width to improve the sealing reliability.Simultaneously, the required electric current of conduction heating can be reduced, thereby the thermal expansion of the chassis body of heating can be limited by the chassis body 13 that is used to seal.
This chassis body 13 is with to have through hole 30 not compare with the chassis body in crack 32 flexible, along each limit vertically, promptly with direction that the surface of substrate parallels on, have high flexibility.Therefore, can solve the problem that the conduction heating makes chassis body 13 thermal expansions and distortion.Simultaneously, can obtain alleviating the effect of the pressure of chassis body 13 to the thermal change such as environment temperature etc., thereby improve sealing reliability.If encapsulant 21a and 21b dissolve, and can improve the confining force of encapsulant, can prevent that then encapsulant from overflowing or partly distribution.Therefore, chassis body 13 can seal equably at its whole periphery.
In the above described manner, substrate and meron before can sealing fast and stably, and the FED that can obtain having satisfied vacuum degree.
Be the explanation of having used a plurality of examples of second embodiment below.
(example 1)
Below be to the explanation of the structure applications shown in Figure 13-16 in an example of the FED of 30 inches TVs display device.Its primary structure is with identical in conjunction with the described example of above second embodiment.
Preceding substrate 11 and meron 12 respectively are separately positioned on each outer edge part of preceding substrate 11 and meron 12 by the thick 3mm of the formed 0.2mm of the thick glass plate of 2.8mm wide indium 21a and 21b.As shown in Figure 14 and 16, chassis body 13 is the thick nickel alloys of the wide 2mm of 5mm, is drilled with oval diameter and is φ 2-3mm and latticed through hole 30 into the net is set and has the slit 32 of semi-circular cross-sections basically.Therefore, the resistance of this chassis body 13 is the twice that does not have the chassis body in through hole or slit basically, and the former quality is about the latter half.In addition, ledge 18a forms and is used as the electrode of conductive current and the part that meron 12 is fixed in conduct respectively on four angles of chassis body 13.These standing parts allow chassis body 13 to be superimposed upon on the indium 21b in the outer edge part of meron 12.
Put into vacuum tank and after this vacuum tank venting, when substrate temperature reaches 120 ℃, form getter film at preceding substrate 11 and meron 12, before substrate 11 and meron 12 aim at the precalculated position chassis body 13 be clipped between the indium 21a and 21b on the outer edge part, and under the load of pressurized and about 20kgf.
In the case, the electric current that the ledge 18a of chassis body 13 is led to 30 seconds 300A.At this moment, indium 21a and 21b are heated to about 160 ℃ and fusing.When finishing when energising, heat from chassis body 13 and indium 21a and 21b apace thermal diffusion to substrate etc., thereby indium cooling and solidifying.After this substrate 11 and meron 12 are to obtain FED before taking out in about 300 seconds.
For chassis body 13 provides reticulated cell and slit, the size of heating current realistic scale can be limited to by like this, and frame width can be increased to improve sealing reliability.Because the thermal expansion of web frame absorbing frame main body 13 can prevent that frame structure is subjected to conduct heating and twist.
(example 2)
The primary structure of example 2 is identical with example 1.
In example 2, shown in Figure 18 and 19, the opposite side of chassis body 13 loads indium 21a and 21b respectively during manufacture, and preceding substrate 11 and meron 12 are not mounted with any potted component.When being put into the vacuum assembling jar, preceding substrate 11, meron 12 and chassis body 13 keep erectting (vertically transporting).After this, use the processing identical to form FED with above second embodiment.
Vertically transport if adopt in this way, then can realize having satisfied space and maintainable vacuum mounting equipment.Traditionally, exist the problem that heating is overflowed indium in deflation course.Yet according to this example, the chassis body 13 that is drilled with netted open-end hole 30 and slit 32 is loaded indiums, with the indium local positioning in through hole 30.When by vertically transporting when heating each assembly, indium can remain on the chassis body with not overflowing.
(example 3)
The primary structure of example 3 is identical with example 1.
In example 3, as shown in figure 20, chassis body 13 is provided with a large amount of straight slot 32, and the whole basically one-tenth bellows form of chassis body 13.Slit 32 forms with the respective surfaces of preceding substrate and meron with meeting at right angles, and the compartment of terrain extends to form from the opposite flank of chassis body 13.Utilize these slits 32, the effect that the example 1 that also can obtain through hole 30 and example 2 are identical.
(example 4)
The primary structure of example 4 is identical with example 1.
In example 4, as shown in figure 21, the formation density in through hole 30 and slit 32 changes according to the zone of chassis body in chassis body 13.Like this, can partly change the resistance of chassis body 13.Therefore, can change the conduction heating of controlling desired area with the local electrical resistance of chassis body 13.Even in the specific part such as the angle part, this part can not melt easily owing to thermal diffusion, yet encapsulant such as other parts are melted with identical timing.Therefore, each outer edge part of preceding substrate and meron can give evenly and stably sealing on whole periphery.
(example 5)
The primary structure of example 5 is identical with example 1.
In this example, as shown in Figure 22, chassis body 13 has the slit 32 of the basic semicircle that is provided with at interval, and the shape of the whole basically formation bellows of chassis body 13.Utilize these slits 32, the effect that the example 1 that also can obtain through hole 30 and example 2 are identical.
In a second embodiment, chassis body has through hole and slit.Yet chassis body also can have only through hole or have only the slit.
Be the detailed description of the FED of a third embodiment in accordance with the invention below.
Shown in Figure 23-25, FED comprise by the rectangle glass as insulating substrate form and between across the gap of 1-2mm relative preceding substrate 11 and meron 12.Before substrate 11 and meron 12 have their passing through the outer edge part that conduction rectangular frame main body 13 is bonded together and constituting the rectangular vacuum shell 10 that a smooth inside keeps vacuum state separately.The composition surface of chassis body 13 with the outer edge part of the inner surface that is positioned at preceding substrate 11 is bonded together with conductive seal material 21a (following), and the composition surface of chassis body 13 with the outer edge part of the inner surface that is positioned at meron 12 is bonded together with encapsulant 21b.Sealing material 21a and 21b be preferably at 300 ℃ or following fusing or softening material, and the low-melting-point metal such as indium, indium alloy can be used for them.In composition surface and the chassis body 13 one can be used the low melting point encapsulant such as the glass of sintering engage in advance.
The ledge 42 that chassis body 13 has four ledges of outwards giving prominence to from four angle parts respectively 40 and outwards gives prominence to from the core separately on each limit.Ledge 40 and 42 has from the angle of chassis body or the bar part 40a of the elongation that the limit part is outstanding and 42a and standing part 40b and the 42b wideer than bar part that form in the end of the extension of bar part respectively.With encapsulant 21a and 21b with ledge 40 and 42 and the outer edge part of the inner surface of the outer edge part of the inner surface of preceding substrate 11 and meron 12 be bonded together.Therefore, chassis body 13 is maintained at the predetermined bonding station with respect to preceding substrate 11 and meron 12.Ledge 40 is as electrode and be used to keep support part with the positioning framework main body during manufacture.
Shown in Figure 24,25 and 26, chassis body 13 has the slit 32 that latticed through hole 30 into the net and a plurality of lateral openings in chassis body are set in a large number, as a kind of flexible longitudinally structure that weakens along each limit part.Substrate 11 and meron 12 and meet at right angles with their surface and on the whole periphery of chassis body 13, be provided with before through hole 30 that forms and slit 32 are passed respectively with given interval.Chassis body 13 is that 500 ℃ or above material form by fusing point preferably, and the material that comprises at least one element among Ti, Fe, Cr, Ni, Al and the Cu can be used for it.The width of each limit part of chassis body 13 is adjusted to 4mm or following, and 2-3mm preferably.
Shown in Figure 24 and 25, a plurality of tabular spacers 14 that are used to bear the air pressure that acts on preceding substrate 11 and meron 12 are arranged in the vacuum casting 10.These spacers 14 be provided with the minor face of vacuum casting 10 with paralleling and with direction that long limit parallels on give at interval.Not specific this shape that is limited to of spacer 14 for example can also be used tubular spacer etc.As what form on the inner surface of preceding substrate 11 among first embodiment is the metal gasket 17 that has the fluorescence coating R, the G that send red, green and blue light respectively of mutual superposition setting successively and B, rectangular black light gettering layer, formed by aluminium etc. and the phosphor screen 16 of gettering layer 27.
Be arranged on as shown in figure 25 on the inner surface of meron 12 is a large amount of as sending electronics and activate the electronic emission element 22 of their electron emission source to fluorescence coating R, G and B separately.Electronic emission element 22 is positioned at the position relative with B with each fluorescence coating R, G and to they corresponding fluorescence coating divergent bundles.In addition, the lead-in wire 19 that drives electronic emission element 22 in a large number forms matrix on the inner surface of meron 12.Each end of lead-in wire 19 is drawn out to the outer edge part of meron.
Below be the manufacture method of the FED that constitutes in this way and the explanation of manufacturing installation.
At first, the preceding substrate of being prepared 11 has within it the surface and goes up the phosphor screen 16 that forms, and indium as encapsulant 21a with the shape of framework be dispersed in be positioned at before on the composition surface and fluoroscopic outside on the inner surface of substrate.The meron of being prepared 12 has a large amount of surfaces within it and goes up the electronic emission element 22 that forms, and is fixed with spacer 14.Indium is dispersed on the composition surface of the inner surface that is positioned at meron 12 and the outward flange outside of electronic emission element 22 with the shape of framework as encapsulant 21b.
Then, conductive frame main body 13 is superimposed upon on the sealing 21b as shown in figure 27.Integrally be formed for conducting the ledge 40 of the electrode that electric current flow through of heating in advance in four angle parts of chassis body 13, and the core separately on each limit integrally forms the ledge 42 of location in advance., with after meron 12 is aimed at ledge 40 and 42 is closed up to meron 12 in chassis body 13.Jointing material or the retaining element selecting suitably to be fit to are used for the location.In order to alleviate power supply, each ledge 40 forms an integral body with the lug 40c that further outwards gives prominence to from standing part 40.
In the case, preceding substrate 11 and 12 years volume encapsulants of meron.Yet chassis body 13 also can be adorned with encapsulant, or is loaded respectively by preceding substrate 11, meron 12 and chassis body 13.
Then, when keeping their composition surfaces separately relative, make chassis body 13 be placed on preceding substrate 11 and meron 12 on the encapsulant 21b to give set a distance relative and establish with anchor clamps etc.After finishing, meron 12 is positioned at for example face preceding substrate 11 belows up.Under this state, preceding substrate 11 and meron 12 are put into vaccum processor.As first embodiment, vaccum processor 100 shown in Figure 6 is as this vaccum processor.
At first, preceding substrate 11 and meron 12 are placed into feed compartment 101, and form to be transported to after the vacuum in feed compartment and cure and electron beam clean room 102.Cure with electron beam clean room 102 in, preceding substrate 11 and meron 12 are obtaining about 10 -5Condition of high vacuum degree the time by the heating fully the degassing.On request heating-up temperature is set to about 200 ℃ to 500 ℃.Do like this is in order to reduce to emit from the inwall of the vacuum casting that obtains that reduces vacuum degree the speed of gas, to reduce characteristic to prevent residual gas.
When curing with electron beam clean room 102 in during heating element, the phosphor screen surface of substrate 11 and the electronic emission element surface of meron 12 before being attached to the electron beam generator (not shown) that cures with electron beam clean room 102 electron beam being added to.Because this electron beam can clean phosphor screen surface and electronic emission element surface with electron beam fully by being installed in the deflector of electron beam generator outside.
After heating and electron beam cleaning, preceding substrate 11 and meron 12 are transported to cooling chamber 103 and are cooled to for example about 100 ℃ temperature.Then, preceding substrate 11 and meron 12 are transported to the vapour deposition chamber 104 that is used for getter film, thereby on phosphor screen and metal gasket, form titanate thin film as getter film by vapour deposition.This titanate thin film can prevent that oxygen or carbon from besmirching the surface, thereby keeps activated state.
Then, in assembly chamber 105, make phosphor screen 16 towards electronic emission element 22 preceding substrate 11 and meron 12 hi-Fixs and mutual superposition.After finishing, the encapsulant 21a before chassis body 13 is clipped on the outer edge part of substrate 11 and the outer edge part of meron 12 on encapsulant 21b between.
Under this state, the ledge that goes out from four cornicults of chassis body 13 is respectively contacted with the electrode of equipment one side.Lug 40c by ledge 40 offers chassis body 13 and encapsulant 21a and 21b with given electric current makes the encapsulant heating dissolving, and preceding substrate 11 and meron 12 are pressed to the other side.Add by power supply at this and to pine for, main heating frame main body 13 and encapsulant 21a and 21b, thus can realize heating at short notice, and the thermal expansion of substrate 11 and meron 12 before being not easy to take place.If power supply stops, then heat from chassis body 13 and encapsulant 21a and 21b thermal diffusion to preceding substrate 11 or meron 12.Therefore, can cool off and solidify encapsulant at short notice to finish sealing.
After the vacuum casting 10 that will form in this way in cooling chamber 106 is cooled to normal temperature, it is taken out from relief chamber 107.After the assembling vacuum casting, remove the lug 40c of ledge 40.If ledge 40 and 42 has hindered manufacturing, then should remove them by suitable method.In handling, these have finished FED.
According to the FED that constitutes in this way and make the method for image display unit, substrate 11 and meron 12 before the use enable pass of conductive frame main body 13 is crossed the chassis body power supply engaged with fusing or softening encapsulant 21a and 21b.If if a large amount of cloth sealant portion ground distributes or during powering the melt-sealed material, then conductive frame main body 13 can weaken or reduce the possibility of inhomogeneous heating or disconnection.In addition, can be by chassis body 13 being fixed to preceding substrate 11 and meron 12 from four angles and the partly outstanding ledge 40 and 42 of Ge Bian.Therefore, if make the chassis body thermal expansion, can prevent chassis body distortion or distortion, and chassis body can be remained on precalculated position with respect to substrate by power supply.
Do not have ledge if suppose employed chassis body 13 in the limit part, chassis body 13 itself is heated and stands to cause the elongation of thermal expansion in the time will being used for the electric current supply chassis body 13 of melt-sealed material.Therefore, each limit part is twisted.Though can come this distortion of Restricted edge part by the chassis body 13 that forms broad, in fact the width of chassis body 13 must be increased to 4mm or more than the 4mm.Yet, if the width of chassis body 13 is increased to 4mm or more than the 4mm, its cross section is greatly to making its resistance decline.Therefore, the be satisfied with current value of Joule heat is too big and infeasible inevitably.
On the other hand, in FED, at each limit part and four angles of chassis body 13 ledge 42 is set respectively, and utilizes those ledges to come the positioning framework main body with respect to meron according to the foregoing description.If chassis body 13 is width is the following thin chassis body of 4mm or 4mm, then can limit its distortion or distortion between conduction period of heating and can accurately in the precalculated position it sealed.
In addition, according to the 3rd embodiment, chassis body 13 has netted open-end hole 30 and slit 32.Therefore, can make this chassis body resistance ratio not have the chassis body height in through hole 30 and slit 32.Therefore, do not need chassis body 13 is limited in narrow width in order to avoid resistance is low excessively, thereby can increase frame width to improve sealing reliability.Simultaneously, can reduce by the required electric current of chassis body conduction heating, thus the chassis body thermal expansion that restriction is heated.
This chassis body 13 is not compared with the chassis body in slit 32 with there being through hole 30, be flexible along each limit vertically on (that is, being parallel on the direction of substrate surface) elasticity big.Therefore, can guarantee to solve the thermal expansion of the chassis body 13 that causes by the conduction heating and the problem of distortion.Simultaneously, for the thermal change such as environment temperature variation etc., the effect of stress that can obtain alleviating chassis body 13 is to improve sealing reliability.If melt-sealed material 21a and 21b then can improve the confining force of indium, thereby can prevent that indium from overflowing or part distributes.Therefore, can be on its whole periphery encapsulant main body 13 equably.
In the above described manner, substrate and meron before can sealing fast and stably, and the FED that can obtain to have satisfied vacuum degree.
Below a plurality of example of the present invention has been used in explanation.
(example 6)
It below is the explanation of an example that the structure shown in Figure 23-25 is used for the FED display device of 30 inches television sets.Its primary structure and relevant the foregoing description described one identical.
Preceding substrate 11 and meron 12 are respectively formed by the thick glass plate of 2.8mm.The indium that is used as each thick 0.2mm, the wide 3mm of encapsulant 21a and 21b is separately positioned on the outer edge part separately of preceding substrate 11 and meron 12.
Shown in Figure 24 and 25, chassis body 13 is that the thick nickel alloy of the wide 2mm of 3mm is formed, and to be drilled with oval diameter be φ 2-3mm and latticed through hole 30 into the net is set and has the slit 32 of semi-circular cross-sections basically.Chassis body 13 has ledge 40 and 42 at each center of its four angles and Qi Bian.Chassis body 13 is so located with the outer edge part stack encapsulant indium 21b at meron 12, and is fixed in the individual marginal portion of meron 12 by standing part 40b and 42b.
Preceding substrate 11 and meron 12 put into vacuum tank and in this vacuum tank venting to form getter film.After this when substrate temperature reaches 120 ℃, preceding substrate 11 and meron 12 are arranged with the precalculated position chassis body 13 are clipped between the indium 21a and 21b on the outer edge part, and under the load of preceding substrate and meron pressurized and about 20kgf.
In the case, the ledge 40 to chassis body 13 leads to 30 seconds 360A.At this moment, indium 21a and 21b are heated to about 160 ℃ and fusing.When finishing when energising, heat from chassis body 13 and indium 21a and 21b apace thermal diffusion to substrate etc., indium cooling and solidifying thereon.After this substrate 11 and meron 12 are to obtain FED before taking out in about 300 seconds.
By using ledge 40 and 42 fixed frame main bodys 13, even the width of chassis body 13 is distortions that 3mm also can limit the distortion of each limit part fully.
In the present embodiment, utilize the ledge 40 at place, four angles of chassis body 13 as current electrode.Yet, can also be as shown in Figure 28, for the ledge pairs setting system in the limit of chassis body part will be as the lug 42c of current electrode.
(example 7)
In example 7, as shown in Figure 29, each limit part of the chassis body 14 that is formed by the nickel alloy of φ 2 lead-in wire is provided with a plurality of ledges 42.If in about 30 inches large scale FED middle frame main body 13 are fragile frameworks such as lead-in wire, then be difficult to repair satisfactorily the distortion of ledge at each center on the limit that only is positioned at chassis body.Therefore, as example 7, the distortion that a large amount of ledges 42 come the repair boxes frame body is set by each limit in chassis body 13.
(example 8)
In example 3, in the example 3 as shown in Figure 20, on chassis body 13, be provided with a large amount of straight slot 32 as the flexible longitudinally structure that weakens along each limit part, and form bellow-shaped on the chassis body 13 whole substrates.Form slit 32 with each surface of preceding substrate and meron, and they extend alternately from the opposite flank of chassis body 13 with meeting at right angles.Be provided with as chassis body in the situation of through hole 30, use these slits 32, can make 13 pairs of thermal expansions of chassis body flexible, thus can restrained deformation and distortion.The ledge of the limit of chassis body part can not limit thermal expansion at all and with limit deformation at localised waving.Yet itself can absorb its thermal expansion above-mentioned elastic construction.
For other structure, this example is similar to the foregoing description.
(example 9)
In example 9, in the example among Figure 22 5, each limit part of chassis body 13 curved become bellow-shaped on the substrate.In the case, the section of each limit part can be rectangle, circle or any other shape.Use this warp architecture, can also obtain the effect identical with other example.For other structure, this example is similar to the aforementioned embodiment.
Be detailed description below to the FED of a fourth embodiment in accordance with the invention.
Shown in Figure 30-32, substrate 11 and meron 12 before this FED comprises are formed also between them across the gap of 1-2mm toward each other by each rectangle glass as insulating substrate.Before substrate 11 and meron 12 have their outer edge part that is bonded together by rectangular frame main body 13 separately, and constitute an inner smooth rectangular vacuum shell 10 that keeps vacuum state.
Hermetic unit 50 is bonded together the outer edge part separately of preceding substrate 11 and meron 12.Sealant surface on the outer edge part of the sealing surfaces before more particularly, rectangular frame main body 13 is positioned on the outer edge part of the inner surface of substrate 11 and the inner surface of meron 12.With wherein will be on each sealing surfaces of substrate the sealant 53 that fuses together of formed ground plane 51 and the indium layer 52 that on ground plane, forms, preceding substrate 11 and meron 12 are sealed to chassis body 13 respectively.These sealants 31 and chassis body 13 constitute hermetic unit 50.
In the present embodiment, the section of chassis body 13 is circular.This section configuration is the shape of the section that becomes vertical with chassis body 13 main shafts.Space between the outer surface of the space between the sealing surfaces of preceding substrate 11 and the outer surface of chassis body and the sealing surfaces of meron 12 and chassis body changes on the Width of chassis body.More particularly, if chassis body 13 forms circular cross section, then these spaces are narrow in the core of the Width of relative chassis body.Space before indium layer 52 is filled between the outer surface of the sealing surfaces of substrate 11 and chassis body 13.In the case, the width limitations of each indium layer 52 is in the scope of the Breadth Maximum of chassis body 13.
A plurality of tabular spacers 14 that are used to bear the air pressure that acts on preceding substrate 11 and meron 12 are arranged in the vacuum casting 10.These spacers 14 be provided with the minor face of vacuum casting 10 with paralleling and with direction that long limit parallels at interval.Not specific this shape that is limited to of spacer 14 can also be used the tubular spacer.
As the phosphor screen among first embodiment 16, have the fluorescence coating R, the G that send red, green and blue light respectively and B, rectangular black light gettering layer, metal gasket 17 and gettering layer 27 on the inner surface of preceding substrate 11 successively mutual superposition form.
Be arranged on the inner surface of meron 12 is a large amount of as the fluorescence coating R, the G that activate respectively and the electronic emission elements 22 of B.These electronic emission elements 22 are arranged to respectively and the corresponding a plurality of row of pixel and a plurality of row.Provide the lead-in wire 19 of drive signal on the inner surface of meron 12, to form matrix to electronic emission element 22 in a large number.Each end of lead-in wire 19 is drawn out to the outer edge part of meron.
Be the detailed description of the manufacture method of the FED that constitutes in this way below.
Prepare to have on the inner surface meron 11 that has a large amount of electronic emission elements 22 on the preceding substrate 11 of phosphor screen 16 and the inner surface with the processing identical with above first embodiment.Then, spacer 14 is fixed in meron 12.Because phosphor screen is applied high voltage, high strain-point glass is used for preceding substrate 11, meron 12 and spacer 14.
Then, formation will be positioned the chassis body 13 on the outer edge part of substrate.Chassis body 13 is formed by metal round rod with circular cross section or lead-in wire, and it is curved rectangular frame according to required size.Employed metal can be to have comprised the simple material that for example comprises any material of iron, nickel and titanium, or alloy and so on conducting metal, or the non-conducting material such as glass, pottery etc.Adopt iron in this example.
With corresponding three the location bending chassis body in its three angle parts.It is that part of with respect to the chassis body 13 of a remaining angle part to seal formation by the two ends that will go between with the laser sealing maching.Only the sealing-in node is carried out sealing-in with the laser sealing maching like this, immediately and make chassis body.In the sealing-in operation, be preferably in joint and do not stay irregular.If chassis body is irregular, can polishes it with gold file etc. and make it can be used as an integral body fully.
Then, silver paste is dispersed on the sealing surfaces of individual marginal portion of inner surface of the outer edge part that is positioned at the inner surface that substrate 11 is arranged and meron 12, thereby forms frame shape ground plane 51.Then, will be dispersed in as the indium of conducting metal encapsulant on each ground plane 51, to form the indium layer of on whole ground plane, expanding respectively 52.
This metallic seal material preferably should be the low melting point metal material with about 350 ℃ fusing point and high viscosity and adhesion.Employed in the present embodiment indium (In) has prominent features such as low vapor pressure, shock proof softness, anti-low temperature brittleness etc. and 156.7 ℃ low melting point.This is a kind of suitable material in addition, because it can directly be engaged to glass according to condition.
Then the meron 12 that will have an indium layer 52 on ground plane 51 and the sealing surfaces thereof with anchor clamps etc. with have the preceding substrate 11 that is placed on the chassis body 13 on its indium layer 52 and shown in Figure 33 they separately across utilizing anchor clamps and so on to keep together for the relative sealing surfaces of set a distance.After this, for example preceding substrate 11 faces down and is positioned at the below of meron 12.Under this state, preceding substrate 11 and meron 12 are put into vaccum processor.In first embodiment, the vaccum processor shown in Fig. 6 is used as this vaccum processor.
Preceding substrate 11 and the meron 12 of having placed chassis body 13 are put into feed compartment 101, and in feed compartment 101, form to be transported to after the vacuum and bake and electron beam clean room 102.Bake with electron beam clean room 102 in, preceding substrate, meron and chassis body are heated to 350 ℃ temperature, to discharge the gas that the surface was absorbed of these elements.
Indium layer under this temperature (fusing point: about 156 ℃) 52 dissolves.Yet,, when indium flows, be maintained on the ground plane because indium layer 52 is to form on the ground plane 51 of high tightness.The indium of fusing is bonded together chassis body 13 and preceding substrate 11.The preceding substrate 11 that will engage chassis body 13 below is called preceding substrate side assembly.
When element curing with electron beam clean room 102 in when heating, be attached to cure with electron beam clean room 102 on the electron beam generator (not shown) electron beam is applied to before the phosphor screen surface of substrate side assembly and the electronic emission element surface of meron 12.Because electron beam is installed in the deflector of outside of electron beam generator with scanning, can clean phosphor screen surface and electronic emission element surface fully with electron beam.
After heating and electron beam cleaning, preceding substrate side assembly and meron 12 are transported to cooling chamber 103 and are cooled to for example about 100 ℃ temperature.Then, preceding substrate side combination and meron 12 are transported to the vapour deposition chamber 104 that is used for getter film, thereby form titanate thin film as getter film on phosphor screen and metal gasket by vapour deposition.This titanate thin film can prevent that the surface from being besmirched by oxygen or carbon, thereby keeps activated state.
Then, preceding substrate side combination and meron 12 are transported to assembly chamber 105, are heated to 200 ℃ at this place.Thereby once more indium layer 52 is fused into liquid phase or softening.Under this state, chassis body 13 and meron 12 are bonded together by the indium layer 52 between them and pressurize with setting pressure on the direction of mutual convergence.After this, the indium of the fusing of some pressurizeds is forced to viewing area or the lead-in wire zone that flows to meron 12.Yet because chassis body 13 has circular cross section, the indium of fusing is stayed in the broad space between the outer surface of the sealing surfaces of meron 12 and chassis body, and the width that is prevented from flowing out chassis body flows to viewing area or outwards.Therefore, indium can be remained on before in the scope of Breadth Maximum of cross section of chassis body 13 on substrate 11 1 sides and meron 12 1 sides.
After this, indium cools off at leisure and solidifies.Thereby meron 12 and chassis body 13 are sealed with the sealant 53 that wherein indium layer 52 and ground plane 51 fuse together.Simultaneously, the sealant 53 that fuses together with indium layer 52 wherein and ground plane 51 is sealed preceding substrate 11 and chassis body 13, thereby forms vacuum casting 10.
After the vacuum casting 10 that will form in this way in cooling chamber 106 is cooled to normal temperature, by relief chamber 107 with its taking-up.In handling, these finish FED.
According to the FED that constitutes in this way and the manufacture method of image display unit, can be by the gas that cures and the electron beam cleaning absorbs from the complete release surface of substrate, simultaneously, sealing in a vacuum preceding substrate and the combination of meron 12.Therefore, can obtain satisfied assimilation effect and not make getter film oxidized.Therefore, the FED that obtains can keep high vacuum.
When the preceding substrate 11 that will seal with meron 12 is joined together and under setting pressure during pressurized, mobile in the broad zone of the encapsulant of fusing between the outer surface of the sealing surfaces of substrate and chassis body.Therefore, can seal and do not allow the encapsulant of fusing be spilled over to image displaying area territory or lead-in wire zone or do not cause any trouble such as lead short circuit.Simultaneously, consider that overflowing of encapsulant needn't guarantee big sealed width, so just can obtain a narrow framework FED.According to said structure, can seal easily and safely even 50 inches or above large scale image display unit, and can enjoy high large-scale production power.
In above-mentioned the 4th embodiment, the section of chassis body 13 is circular.Yet the shape of section must make the space between the sealing surfaces of the outer surface of chassis body and preceding substrate and/or meron change on the Width of chassis body.In addition, only should form to have it is had towards the chassis body of the section configuration on the surface (that is, with the uneven surface of sealing surfaces) of the not parallel relation of one-tenth of the sealing surfaces of preceding substrate and/or meron to small part.For example, shown in Figure 34,35,36 and 37, chassis body 13 can have the section configuration of ellipse, cross or rhombus.
Chassis body 13 is not limited to solid, can also form hollow-core construction shown in Figure 38.In the case, the section configuration of chassis body 13 also needn't be always circular, also can be ellipse, cross or the rhombus shown in Figure 34,35,36 and 37.
As shown in figure 39, the sealant 53 of the sealant 53 between chassis body 13 and the preceding substrate 11 between chassis body 13 and meron 12 can be linked at round chassis body, makes chassis body 13 be embedded in the sealant 53.
The material of chassis body 13 is not limited to metal, can also be formed by any other material such as glass or pottery, as long as it has the shape according to the framework of above embodiment.
In addition, encapsulant is not limited to indium, but the encapsulant that uses can also be the material of the influence of thermal expansion when reducing the coefficient of thermal expansion differences between face glass and the encapsulant or weakening the seal glass panel.For example, can will comprise the alloy of indium and/or gallium as the conductive seal material.Glass, organic adhesive material or the inorganic bonding material of sintering can be used as non-conductive encapsulant.
In above-mentioned the 4th embodiment, indium or other encapsulant can be used for during making vacuum casting the space between the seal frame main body and preceding substrate and chassis body and meron in a vacuum.Yet, can also be in air engage remaining joint in a vacuum with above-mentioned processing between seal frame main body and the preceding substrate and behind the space between chassis body and the meron in advance with indium or other encapsulant or low-melting glass.
When preceding substrate and meron are bonded together, in the 4th embodiment, these substrates also in assembly chamber, be heated to about 200 ℃ with fusing or softening indium layer.Yet, can melt or softening indium layer rather than heat whole substrate by conduction heating.More particularly, preceding substrate and meron pressurized on a direction is close mutually, and chassis body is clipped between the indium layer.Under this state, chassis body 13 is energized and produces Joule heat, makes that indium layer 52 can be by this heat melts with seal substrate.In the case, chassis body 13 is formed by electric conducting material.If chassis body 13 forms hollow-core construction shown in Figure 38, then can make its tool high resistance and be easy to heating, thereby to reduce conduction current.Simultaneously, be sealed at preceding substrate and meron that the thermal capacity of afterframe main body 13 is little can be cooled off at short notice to chassis body.Therefore, can improve manufacturing efficient.
Alternatively, can so just can or soften indium layer 52 and come seal substrate directly to indium layer 52 rather than chassis body 13 energisings with the Joule heat fusing.
The invention is not restricted to the foregoing description, in implementing process of the present invention, can make various modifications and do not depart from scope of the present invention.In addition, above embodiment comprises the invention in various stages, can extract various inventions by making up a plurality of disclosed component parts that require suitably.Even when from described in all embodiment require the component parts to omit the ask for something component parts time, for example, can extract the invention of being provided as of having omitted the component parts that requires, as long as can solve in the invention described above and will solve the problem discussed in the part, and can obtain the effect in the effect part of the invention described above, explained.
For example, can select the shape of required vacuum casting, the structure of support component, fluoroscopic shape, type of sealing material etc. with changing and be not limited to above embodiment.In addition, in the above-described embodiments, the field emitted electron radiated element is as electronic emission element.Yet, can use any other electronic emission element such as pn type cold cathode element or surface conductive electronic emission element to replace them.In addition, the invention is not restricted to FED, SED or other any display device that needs vacuum casting.The present invention can also use PDP effectively or any other is configured to inject the image display unit of discharge gas after once vacuumizing.
Industrial applicibility
According to the present invention, as described herein, provide a kind of and can engage securely at short notice and can be steady Surely keep image display unit and the manufacture method thereof of frame shape.
By the conduction heating the front substrate of conductive frame main body and the separately outward flange of meron will arranged therebetween When part is sealed, according to the present invention, can reduces the required electric current of conduction heating, thereby can limit The thermal expansion of the chassis body of heating. Therefore, can be quick and stable carry out the close of front substrate and meron Envelope operation, and image display unit with satisfied vacuum and the manufacturing side of image display unit may be provided Method.
By the conduction heating the front substrate of conductive frame main body and the separately outward flange of meron will arranged therebetween When part is sealed, according to the present invention, can limit distortion and the distortion of electrically heated chassis body. Therefore, the seal operation of carrying out front substrate and meron that can be quick and stable, and may provide have full The image display unit of meaning vacuum and the manufacture method of this image display unit.
According to the present invention, provide a kind of can enjoy narrow Frame Design and stably keep bubble-tight image aobvious The manufacture method of showing equipment and this image display unit.

Claims (55)

1. an image display unit is characterized in that, comprising:
Have preceding substrate and the meron relative and at the shell that is provided with a rectangular frame main body separately between the periphery of preceding substrate and meron with preceding substrate; With
The a plurality of pixels that in this shell, form,
This chassis body has from each angle part outwards gives prominence to and wants nipped ledge on the direction parallel with the limit of framework.
2. image display unit as claimed in claim 1 is characterized in that, described each ledge with direction that the long limit of frame body parallels on outwards outstanding from each angle part of chassis body.
3. image display unit as claimed in claim 1 is characterized in that, described each ledge with direction that the minor face of chassis body parallels on outwards outstanding from each angle part of chassis body.
4. as arbitrary described image display unit among the claim 1-3, it is characterized in that at least one engages with in described chassis body and meron and the preceding substrate with low-melting-point metal.
5. the manufacture method of an image display unit is characterized in that, described method comprises:
Described image display unit comprises: have preceding substrate and the meron relative with preceding substrate and be provided with the shell of a rectangular frame main body between each periphery of preceding substrate and meron; With a plurality of pixels that form in this shell, this method comprises:
Form with the rectangular frame that has outside each angle outstanding ledge is prepared chassis body;
Clamp and be pulled outwardly the ledge of this chassis body, thereby on its longitudinal direction, a tension force is added to each limit part of chassis body;
With the tension force that applies that is kept at least one in substrate and the meron with chassis body location and before being engaged to.
6. the manufacture method of image display unit as claimed in claim 5, it is characterized in that, preparation has the chassis body of the ledge that stretches out from each angle part on the direction of diagonal axes, and clamps and be pulled outwardly described ledge tension force is added to each limit part of described chassis body on the direction of diagonal axes.
7. the manufacture method of image display unit as claimed in claim 5, it is characterized in that, preparation has the chassis body of the ledge that stretches out from each angle part on the direction that is parallel to the limit, and clamps and be pulled outwardly described ledge tension force is added to each limit part of described chassis body.
8. as the manufacture method of arbitrary described image display unit among the claim 5-7, it is characterized in that, locate and engage described chassis body in a vacuum.
9. an image display unit is characterized in that, comprising:
Have the shell of preceding substrate and the meron relative with preceding substrate, at the conductive frame main body and the encapsulant between chassis body and preceding substrate or meron so that preceding substrate and meron are bonded together between the periphery separately of preceding substrate and meron
Described chassis body have a plurality of with the surperficial perpendicular direction of preceding substrate on penetrated formed through hole of chassis body or slit.
10. image display unit as claimed in claim 9 is characterized in that, forms described through hole or slit according to position on the whole periphery of described chassis body with different density.
11. image display unit as claimed in claim 9 is characterized in that, bellow-shaped is arranged in described through hole or slit.
12. image display unit as claimed in claim 9 is characterized in that, described through hole or slit are provided with into the net latticed.
13., it is characterized in that described encapsulant comprises indium or based on the alloy of indium as arbitrary described image display unit among the claim 9-12.
14., it is characterized in that described encapsulant is at fusing below 300 ℃ or 300 ℃ or softening material as arbitrary described image display unit among the claim 9-12.
15., it is characterized in that described chassis body is formed by material at least a in the element that comprises titanium, iron, chromium, nickel, aluminium and copper as arbitrary described image display unit among the claim 9-12.
16., it is characterized in that described chassis body is formed by the material with the fusing point more than 500 ℃ or 500 ℃ as arbitrary described image display unit among the claim 9-12.
17. as arbitrary described image display unit among the claim 9-12, it is characterized in that, the electron source of fluorophor and activation fluorophor is arranged in the described shell, and described enclosure keep vacuum.
18. the manufacture method of an image display unit, described image display unit comprises: have the shell of preceding substrate and the meron relative with preceding substrate, at the conductive frame main body and the encapsulant between chassis body and preceding substrate or meron so that preceding substrate and meron are bonded together between the periphery separately of preceding substrate and meron, it is characterized in that described method comprises:
Prepare chassis body, this chassis body have a plurality of with the surperficial perpendicular direction of preceding substrate on penetrated formed through hole of chassis body or slit;
Preceding substrate and meron are arranged to toward each other;
Before chassis body is arranged between the outer edge part of the inner surface separately of substrate and meron and, and a conductive seal material is arranged in the outer edge part of inner surface separately of frame part and preceding substrate and meron between at least one to cover whole periphery along the outer edge part separately of preceding substrate and meron; And
Come the heating frame main body by power supply, take this fusing or softening encapsulant, preceding substrate and meron are pressed to each other, and the outer edge part separately of preceding substrate of sealing and meron.
19. the manufacture method of image display unit as claimed in claim 18 is characterized in that, switches on fusing or softening described encapsulant to described chassis body in a vacuum.
20. an image display unit is characterized in that, comprising:
Have the shell of preceding substrate and the meron relative with preceding substrate, before described substrate and meron separately between the periphery with conductive frame main body that preceding substrate and meron are bonded together and described chassis body and described before encapsulant between substrate or the meron
Described chassis body has four ledges outstanding outside four angles and at least one is from the outwards outstanding ledge of limit part.
21. image display unit as claimed in claim 20 is characterized in that, the width of at least a portion of described chassis body is 4mm or below the 4mm.
22. image display unit as claimed in claim 20 is characterized in that, each limit part of described chassis body has a kind of structure that its elasticity on is vertically weakened.
23. image display unit as claimed in claim 22 is characterized in that, described chassis body have a plurality of with the surperficial perpendicular direction of preceding substrate on pass the through hole or the slit of described chassis body.
24. image display unit as claimed in claim 20 is characterized in that, each limit part of described chassis body has at least one outwards outstanding ledge.
25. image display unit as claimed in claim 20 is characterized in that, each limit part of described chassis body has a plurality of outwards outstanding ledges.
26. as arbitrary described image display unit among the claim 20-25, it is characterized in that, described each ledge have from the angle of described chassis body or the bar part of the elongation that the limit part is outstanding and form in the end of stretching out of described bar part and than the wide standing part of described bar part, and engage with preceding substrate and meron.
27., it is characterized in that described encapsulant comprises indium or based on the alloy of indium as arbitrary described image display unit among the claim 20-25.
28., it is characterized in that described encapsulant is at fusing below 300 ℃ or 300 ℃ or softening material as arbitrary described image display unit among the claim 20-25.
29., it is characterized in that described chassis body is formed by material at least a in the element that comprises titanium, iron, chromium, nickel, aluminium and copper as arbitrary described image display unit among the claim 20-25.
30., it is characterized in that described chassis body is formed by the material with the fusing point more than 500 ℃ or 500 ℃ as arbitrary described image display unit among the claim 20-25.
31. as arbitrary described image display unit among the claim 20-25, it is characterized in that, the electron source of fluorophor and activation fluorophor is arranged in the described shell, and described enclosure keep vacuum.
32. method of making image display unit, described image display unit comprises: have the shell of preceding substrate and the meron relative with preceding substrate, at the conductive frame main body and the encapsulant between chassis body and preceding substrate or meron so that preceding substrate and meron are bonded together between the periphery separately of preceding substrate and meron, it is characterized in that described method comprises:
Prepare chassis body, this chassis body has four ledges outstanding outside four angles and at least one is from the outwards outstanding ledge of limit part;
Preceding substrate and meron are arranged to toward each other;
Before chassis body is arranged between the outer edge part of the inner surface separately of substrate and meron and, and a conductive seal material is arranged in the outer edge part of inner surface separately of frame part and preceding substrate and meron between at least one to cover whole periphery along the outer edge part separately of preceding substrate and meron;
The ledge of chassis body is closed up to the outer edge part of the inner surface separately of preceding substrate and meron at least one;
Come the heating frame main body by power supply, take this fusing or softening encapsulant, preceding substrate and meron are pressed to each other, and the outer edge part separately of preceding substrate of sealing and meron.
33. the manufacture method of image display unit as claimed in claim 32 is characterized in that, removes the extra ledge of described chassis body after the outward flange separately with preceding substrate and meron is sealed.
34. the manufacture method as claim 32 or 33 described image display units is characterized in that, switches on fusing or softening described encapsulant to described chassis body in a vacuum.
35. an image display unit is characterized in that, comprising:
Have preceding substrate and the shell of the meron relative and the hermetic unit that the outer edge part separately of preceding substrate and meron is sealed with preceding substrate,
Described hermetic unit comprises chassis body and the encapsulant that extends along the outer edge part separately of preceding substrate and meron, described chassis body has a cross section makes in the outer surface of chassis body and preceding substrate and the meron space between at least one the inner surface change on the Width of chassis body, and described encapsulant is arranged in chassis body and the substrate between the inner surface of at least one.
36. image display unit as claimed in claim 35 is characterized in that, described chassis body has circle or elliptical section.
37. image display unit as claimed in claim 35 is characterized in that, described chassis body has the rhombus section.
38. image display unit as claimed in claim 37 is characterized in that, described chassis body has the cross section.
39. image display unit as claimed in claim 35 is characterized in that, formed chassis body has and comprises at least in part with the surface of non-parallel relation in the face of the inner surface of at least one substrate.
40., it is characterized in that described chassis body is hollow as the arbitrary described image display unit of claim 35-39.
41., it is characterized in that described chassis body is solid as the arbitrary described image display unit of claim 35-39.
42., it is characterized in that described encapsulant is separately positioned between described chassis body and the described preceding substrate and between described chassis body and the described meron as the arbitrary described image display unit of claim 35-39.
43., it is characterized in that described encapsulant is arranged in the scope of Breadth Maximum of cross section of described chassis body as the arbitrary described image display unit of claim 35-39.
44., it is characterized in that described encapsulant covers the whole outer surface of described chassis body as the arbitrary described image display unit of claim 35-39.
45., it is characterized in that described encapsulant is a low melting material as the arbitrary described image display unit of claim 35-39.
46., it is characterized in that described encapsulant has conductivity as the arbitrary described image display unit of claim 35-39.
47., it is characterized in that described encapsulant is indium or the alloy that comprises indium as the arbitrary described image display unit of claim 35-39.
48., it is characterized in that described encapsulant is a non-conducting material as the arbitrary described image display unit of claim 35-39.
49., it is characterized in that described encapsulant is sintered glass, organic adhesive material or inorganic bonding material as the arbitrary described image display unit of claim 35-39.
50., it is characterized in that described chassis body has conductivity as the arbitrary described image display unit of claim 35-39.
51. as the arbitrary described image display unit of claim 35-39, comprise: be arranged on described before on fluorescence coating on the inner surface of substrate and a plurality of inner surface that is arranged on described meron and activate the electron source of described fluorescence coating, it is characterized in that described enclosure keeps vacuum.
52. method of making image display unit, described image display unit comprises: have the shell of preceding substrate and the meron relative with preceding substrate and the hermetic unit that the outer edge part separately of preceding substrate and meron is sealed, it is characterized in that described method comprises:
In the outer edge part of the inner surface separately of preceding substrate and meron, form a sealing material layer to cover whole periphery at least one;
There are the preceding substrate of sealing material layer and meron to be arranged to toward each other with top;
Will be before described the outer edge part separately of substrate and the meron chassis body of extending be arranged on before between the outer edge part of inner surface separately of substrate and meron, the space that this chassis body has between the outer edge part that a cross section partly makes the inner surface of at least one in the outer surface of chassis body and preceding substrate and the meron changes on the longitudinal direction of chassis body
The heated sealant material layer is pressed to substrate before described and meron each other with fusing or softening encapsulant, and the outer edge part separately of preceding substrate of sealing and meron.
53. the manufacture method of image display unit as claimed in claim 52 is characterized in that, heats described preceding substrate and meron in a vacuum with fusing or softening described sealing material layer.
54. the manufacture method of image display unit as claimed in claim 52 is characterized in that, described chassis body is formed by electric conducting material, and in a vacuum described chassis body is switched on fusing or softening described encapsulant.
55. the manufacture method of image display unit as claimed in claim 52 is characterized in that, described sealing material layer is formed by electric conducting material, and in a vacuum to described sealing material layer energising melt or is softened.
CN 200480004236 2003-01-10 2004-01-09 Image display device and its manufacturing method Pending CN1751371A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP004409/2003 2003-01-10
JP2003004409A JP2004265601A (en) 2003-01-10 2003-01-10 Image display device and its manufacturing method
JP038722/2003 2003-02-17
JP039422/2003 2003-02-18
JP049053/2003 2003-02-26

Publications (1)

Publication Number Publication Date
CN1751371A true CN1751371A (en) 2006-03-22

Family

ID=33111911

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200480004236 Pending CN1751371A (en) 2003-01-10 2004-01-09 Image display device and its manufacturing method

Country Status (2)

Country Link
JP (1) JP2004265601A (en)
CN (1) CN1751371A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102842475A (en) * 2012-06-11 2012-12-26 友达光电股份有限公司 Substrate limiting structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102842475A (en) * 2012-06-11 2012-12-26 友达光电股份有限公司 Substrate limiting structure
CN102842475B (en) * 2012-06-11 2015-08-05 友达光电股份有限公司 Substrate limiting structure

Also Published As

Publication number Publication date
JP2004265601A (en) 2004-09-24

Similar Documents

Publication Publication Date Title
CN1258205C (en) Image display device, method of manufacture thereof, and apparatus for charging sealing material
CN1260695C (en) Transistor array and active matrix substrate
US6113450A (en) Seal material frit frame for flat panel displays
CN1291444C (en) Visual display
CN1066285C (en) Image-forming apparatus
CN101060048A (en) Electron-emitting device, electron source, image display apparatus and method of fabricating electron-emitting device
CN1306538C (en) Image display device, and method and device for producing image display device
US6225737B1 (en) Wall assembly and method for attaching walls for flat panel display
CN1741240A (en) Image display apparatus
US7501751B2 (en) Display device and method of manufacturing same
CN1293594C (en) Image display device
CN1269173C (en) Gas-tight container and image display device using same
CN1751371A (en) Image display device and its manufacturing method
CN1551284A (en) Method for manufacturing image display device
US20060250565A1 (en) Image display device and method of manufacturing the same
CN1392579A (en) Method for producing vacuum container and method for producing image forming device using said vacuum container
CN1799116A (en) Image display device and method of manufacturing the same
CN1663006A (en) Image display device, method of manufacturing image display device, and manufacturing apparatus
CN1926656A (en) Image forming device
US6356013B1 (en) Wall assembly and method for attaching walls for flat panel display
US20060033419A1 (en) Image display device
KR100701112B1 (en) Image display device and method of producing the same
CN1271676C (en) Plate display and its manufacturing method
CN1914707A (en) Image display device
JP2005174636A (en) Manufacturing method of image display device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication