CN1744293B - Method for manufacturing thin film transistor - Google Patents
Method for manufacturing thin film transistor Download PDFInfo
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- CN1744293B CN1744293B CN 200410074226 CN200410074226A CN1744293B CN 1744293 B CN1744293 B CN 1744293B CN 200410074226 CN200410074226 CN 200410074226 CN 200410074226 A CN200410074226 A CN 200410074226A CN 1744293 B CN1744293 B CN 1744293B
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- film transistor
- masterplate
- thin
- printing opacity
- manufacture method
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Abstract
Using stamping technique, the method prepares light-tight lugs of metal or metallic oxide on pattern plate according to prearranged pattern. Light sensitive material is coated on a base plate. When the pattern plate stamps the base plate, ultraviolet light is provided to solidify the light sensitive material. After the pattern plate is separated from the base plate, chemical solution is applied to remove the light sensitive material unsolidified on the base plate. Thus, needed thin-film transistor is formed.
Description
Technical field
The invention relates to a kind of manufacture method of thin-film transistor, in particular to a kind of manufacture method that replaces the thin-film transistor of manufacture of semiconductor.
Background technology
The manufacture method of general conventional thin film transistor is to utilize the manufacture of semiconductor technology to reach, and comprising technology such as film, gold-tinted, etchings, its Production Time is expended long and problem such as making apparatus is costly, and This is what people generally disapprove of when often being.
The conventional semiconductors processing procedure, must utilize chemical vapour deposition (CVD) (Chemical VaporDeposition earlier, CVD) deposited semiconductor and insulator film, physical vapour deposition (PVD) (PhysicalVapor Deposition, PVD) deposited conductor film re-uses gold-tinted processing procedure and etch process define pattern; Aforesaid depositing device and etching machines all incur a considerable or great expense.
See also first known shown in Figure 1A to Fig. 1 D, be to print journey for the heritage optical pressure, one printing opacity masterplate 1a convexes with projection, this projection also is printing opacity, when utilizing this printing opacity masterplate 1a, in its space, pour into photosensitive material 3a, after the ultraviolet photoetching solidifying and setting near this glass-based version 2a, carry out dry type (dry etching) again or wet type (wet etching) etching removes the unnecessary photosensitive material 3a of part, can form thin-film transistor whereby; Because this projection that the heritage optical pressure is printed to is a printing opacity, be to be the burn-out moulding with this photosensitive material 3a, the extra etch process that utilizes is except removing the unnecessary photosensitive material 3a of part, and its further meaning is as photoresistance and reaches the degree of depth of pattern forming.
See also shown in Figure 2 second known, be to be U.S. Pat 6,518, the schematic flow sheet of the how rice transfer printing (nanoimprint) that discloses for No. 189, light tight masterplate 1b convexes with projection, this light tight masterplate 1b is stamped on the substrate 2b that is coated with thermoplastic macromolecule material 3b, because the special nature of thermoplastic macromolecule material, must utilize heating (more than 300 degree Celsius) and pressurization to make molecule fusion and being solidified togather, be must careful its Embosser of collocation use with the needed process conditions of thermoplastic macromolecule material; In addition, thermoplastic macromolecule material still must carry out etch process again behind cooling forming, to keep required pattern.
The shown in Figure 3 the 3rd is known, is to be U.S. Pat 5,900, the schematic flow sheet of the micro-contact printing technology (microcontact printing) that discloses for No. 160; Turbine type mould 1c is stamped on the substrate 2c with particulate molecular layer 3c having in the mode of revolving-rolling; Right this mode lacks the stability and the accuracy of aligning (alignment); In addition, mold materials is that (dimethylsiloxane, PDMS) made, abrasion are out of shape easily, further the accuracy of the figure of influence impression for dimethyl silicone polymer.
The 4th known shown in Fig. 4 A to Fig. 4 D is to be U.S. Pat 6,060, the schematic flow sheet of the micro-contact printing technology that discloses for No. 121, its utilization has the masterplate 1d of projection, and this masterplate 1d surface-coated has coining material 3d, and impression is coated with the substrate 2d of film 4d; The material of right this method moulding is thin excessively, must implement him with other step and plant material thereon to increase figure thickness.
The 5th known shown in Fig. 5 A to Fig. 5 D is to be U.S. Pat 6,380, the schematic flow sheet of the micro-contact printing technology that discloses for No. 101, its utilization has the masterplate 1e of projection, and this masterplate 1e surface-coated has coining material 3e, and impression is coated with the substrate 2e of film 4e; Its similar first known heritage optical pressure is printed journey, this coining material 3e also same as photoresistance in order to follow-up moment processing procedure.
The 6th known shown in Fig. 6 A to Fig. 6 D is to be U.S. Pat 6,413, the schematic flow sheet of the micro-contact printing technology that discloses for No. 587, its utilization has the masterplate 1f of projection, and this masterplate 1f surface-coated has coining material 3f, and impression is coated with the substrate 2f of film 4f; Its similar the 4th known micro-contact printing technology, moulding material is thin excessively, must implement him and plant material thereon to increase figure thickness.
In addition, as the 3rd to the 6th known disclosed contact printing, its first step must be made the printing mold of a macromolecule material earlier, and it can have enough deformation, and separates with substrate easily behind coining; So because of the flexible characteristic of flexible material tool, the influence that is stressed at the pattern on mould generation meeting defective (defect) during in printing, and have influence on the accuracy of coining; In addition because the chemical characteristic of macromolecule itself, mould easily and non-polar organic solvent (as toluene, hexane) react and make volumetric expansion, be must tighten control with manufacturing environment.
So the above-mentioned disappearance of inventor's thoughts is to concentrate on studies and cooperate the utilization of scientific principle, propose a kind of reasonable in design and extensively and effectively improve the present invention of above-mentioned disappearance.
Summary of the invention
Main purpose of the present invention is to provide a kind of manufacture method of thin-film transistor, is to utilize easy steps to reach the replacement manufacture of semiconductor, improves make efficiency and saves manufacturing cost.
An of the present invention purpose is to provide a kind of manufacture method of thin-film transistor, but is the degree of depth of control based on direct control chart case moulding, need not add etching or other processing procedure.
In order to reach above-mentioned purpose, the present invention provides a kind of manufacture method of thin-film transistor, is to comprise the glass substrate of purchasing earlier; Coating is made one deck negative photosensitive material on this glass substrate, and this negative photosensitive material is semi-conducting material, conductor material or insulating material; A purchase printing opacity masterplate and be provided with light tight projection by a predetermined pattern (Pattern); Press down this printing opacity masterplate to this glass substrate; And utilize this negative photosensitive material of ultraviolet light (UV) exposure solidifying and setting; And after separating this printing opacity masterplate and this glass substrate, provide chemical solution cleans and removal to cover this negative photosensitive material of uncured typing because of this light tight projection; Whereby, this printing opacity masterplate impression and this semi-conducting material of solidifying and setting, conductor material and insulating material via having this light tight projection can form required thin-film transistor.
Description of drawings
First known shown in Figure 1A to Fig. 1 D is the schematic flow sheet of printing journey for the heritage optical pressure;
Shown in Figure 2 second is known, is to be U.S. Pat 6,518, the schematic flow sheet of the how rice transfer printing that discloses for No. 189;
The shown in Figure 3 the 3rd is known, is to be U.S. Pat 5,900, the schematic flow sheet of the micro-contact printing technology that discloses for No. 160;
The 4th known shown in Fig. 4 A to Fig. 4 D is to be U.S. Pat 6,060, the schematic flow sheet of the micro-contact printing technology that discloses for No. 121;
The 5th known shown in Fig. 5 A to Fig. 5 D is to be U.S. Pat 6,380, the schematic flow sheet of the micro-contact printing technology that discloses for No. 101;
The 6th known shown in Fig. 6 A to Fig. 6 D is to be U.S. Pat 6,413, the schematic flow sheet of the micro-contact printing technology that discloses for No. 587;
Preferred embodiment of the present invention shown in Fig. 7 A to Fig. 7 C is the enforcement schematic diagram for the thin-film transistor manufacture method;
The schematic side view of masterplate of the present invention shown in Figure 8.
Symbol description:
Printing opacity masterplate～1a
Glass-based version～2a
Photosensitive material～3a
Light tight masterplate～1b
Substrate～2b
Thermoplastic macromolecule material～3b
Turbine type mould～1c
Substrate～2c
Particulate molecular layer～3c
Masterplate～1d
Substrate～2d
Coining material～3d
Film～4d
Masterplate～1e
Substrate～2e
Coining material～3e
Film～4e
Masterplate～1f
Substrate～2f
Coining material～3f
Film～4f
Printing opacity masterplate～1
Light tight projection～11
Glass substrate～2
Negative photosensitive material～3
Ultraviolet light (UV)～4
Adhesion layer～5
Release layer～6
Embodiment
In order to make your juror can further understand feature of the present invention and technology contents, see also and followingly consult and illustrate usefulness yet institute's accompanying drawing formula shown only provides about shown in detailed description of the present invention and the accompanying drawing, be not to be used for the present invention is limited.
The present invention makes light tight projection on the printing opacity masterplate, and then compacting is coated with on the substrate of negative photosensitive material, but this light tight projection shaded portions photosensitive material, avoid solidifying because of irradiating ultraviolet light, utilize chemical solution cleans to remove uncured photosensitive material again, reach and additionally to use etching or other to make, can directly finish the graphical definition on this substrate, and can directly define the figure degree of depth.The present invention is that the photosensitive material of different nature of can arranging in pairs or groups is applied on each layer structure of thin-film transistor, is used as semiconductor layer as semi-conducting material, as active layer, ohmiccontact layer etc.; Electric conducting material is as lead or electrode layer, as gate electrode, source and drain electrode, contact pad, capacitance electrode, circuit line etc.; And insulating material is as the usefulness of isolation, as insulator layer, dielectric layer, passivation layer etc.It obviously than the complicated process of manufacture of semiconductor, has the simple and rapid manufacturing process, also saves the expenditure of semiconductor equipment.
Seeing also Fig. 7 A to Fig. 7 C, is the enforcement schematic diagram for a kind of thin-film transistor manufacture method, and it comprises: as Fig. 7 A, and the glass substrate 2 of purchasing earlier; Rotary coating (Spin Coating) is made one deck negative photosensitive material 3 on this glass substrate 2; A purchase printing opacity masterplate 1 and be provided with light tight projection 11 by a predetermined pattern (Pattern).As Fig. 7 B, level presses down this printing opacity masterplate 1 to this glass substrate 2, bestow the uniform pressure of this negative photosensitive material 3, this printing opacity masterplate 1 of may command presses down this negative photosensitive material 3 to one desired depths, and this negative photosensitive material 3 can mobile fill up the space between this printing opacity masterplate 1 and this glass substrate 2; And utilize ultraviolet light (UV) 4 these negative photosensitive materials 3 of exposure solidifying and setting, this moment, this light tight projection 11 was these negative photosensitive materials 3 that can cover under it, avoided solidifying because of irradiating ultraviolet light 4.Fig. 7 C, separate this printing opacity masterplate 1 and this glass substrate 2 after, specific chemical solution cleans be provided and remove because of this light tight projection 11 covers this negative photosensitive material 3 of uncured typing, finish the process of the patterning on this glass substrate 2; Whereby, via this printing opacity masterplate 1 impression and this negative photosensitive material 3 of solidifying and setting with this light tight projection 11, the photosensitive material of different nature (as semi-conducting material, conductor material or insulating material) of can arranging in pairs or groups is applied on each layer structure of thin-film transistor, to form required thin-film transistor.
This printing opacity masterplate 1 be for light transmissive material made, as glass (glass) or quartzy (quartz), the light tight projection 11 of this of its making is to can be light-proof materials such as metal to be made, as chromium (Cr), molybdenum (Mo) or tungsten (W), the making of this light tight projection 11 highly is to require height a little less than processing procedure.
The making of this printing opacity masterplate 1 is to utilize manufacture of semiconductor to clean, utilize physical vapour deposition (PVD) (Physical Vapor Deposition again, PVD) technology plates this light tight projection 11 (as metallic film) after plating one deck adhesion layer 5 (as metal oxide) again, see also Fig. 8, this adhesion layer 5 is between this light tight projection 11 and this printing opacity masterplate 1, its thermal coefficient of expansion (coefficient of thermal expansion) is between this light tight projection 11 and this printing opacity masterplate 1, and this adhesion layer 5 is that the metal oxide materials that the metal material of this light tight projection 11 forms of serving as reasons is made.Preferable enforcement aspect plates one deck chromium oxide earlier when using chromium, and its thickness is less than 500 dusts
Plate chromium again, the actual (real) thickness outline of chromium is less than the figure height of impression expection afterwards, and its difference is relevant with the material viscosity with packing pressure, and wherein more appropriate difference is in 10%.After metallic film has plated, utilize gold-tinted and etching (electric paste etching, Wet-type etching, E-beam photoetching or Laser write etc.) processing procedure that graphical definition is come out again, evenly plate transparent material (as Teflon (Teflon)) again, the Teflon material has the effect of repelling each other (de-wetting) for impression materials, and this layer is referred to as release layer 6 (de-wetting layer).
Be to aim at this printing opacity masterplate 1 and this glass substrate 2 before pressing down the printing opacity masterplate with a photo-sensitive cell, this photo-sensitive cell is to be sensitization coupling element (Charge Coupled Device, CCD) or complementary matal-oxide semiconductor element (Complementary Metal-OxideSemiconductor, CMOS).
The preparation method of thin film transistor (TFT) of the present invention and structure thereof are to have following advantages:
1, the present invention has simply and fast manufacturing process than the complicated process of manufacture of semiconductor, also saves the expenditure of semiconductor equipment.
But 2, the present invention control based on direct control chart shape degree of depth need not additional step, so as to reducing cost.
3, the present invention can replace each layer structure that all or part of manufacture of semiconductor is made thin film transistor (TFT), makes and reduces cost by demand.
4, the present invention provides durable metal coupling impression, and is not yielding, is all to be known as height with accuracy and stability that figure is printed.
Claims (11)
1. the manufacture method of a thin-film transistor, the manufacture method of described thin-film transistor is to comprise:
The glass substrate of purchasing;
Coating is made one deck negative photosensitive material on this glass substrate, and this negative photosensitive material is semi-conducting material, conductor material or insulating material;
The printing opacity masterplate of purchasing, this printing opacity masterplate is to be laid with light tight projection by a predetermined pattern;
Press down this printing opacity masterplate to this glass substrate;
Utilize this negative photosensitive material of ultraviolet photoetching solidifying and setting;
Separate this printing opacity masterplate and this glass substrate, provide chemical solution cleans and removal to cover this negative photosensitive material of uncured typing because of this light tight projection;
Whereby, this printing opacity masterplate impression and this semi-conducting material of solidifying and setting, conductor material and insulating material via having this light tight projection can form required thin-film transistor.
2. the manufacture method of thin-film transistor according to claim 1 is to comprise: make this layer negative photosensitive material with rotary coating.
3. the manufacture method of thin-film transistor according to claim 1, wherein this printing opacity masterplate is that this negative photosensitive material of compressing has a desired depth.
4. the manufacture method of thin-film transistor according to claim 1, wherein this printing opacity masterplate is glass or quartz, this light tight projection is a metal material.
5. the manufacture method of thin-film transistor according to claim 4, be to comprise: an adhesion layer is set between this light tight projection and this printing opacity masterplate, the thermal coefficient of expansion of this adhesion layer is between this light tight projection and this printing opacity masterplate.
6. the manufacture method of thin-film transistor according to claim 5, wherein this adhesion layer is that the metal oxide materials that formed by this metal material is made.
7. the manufacture method of thin-film transistor according to claim 6, wherein this metal material is chromium, molybdenum or tungsten, this metal oxide materials is the formed oxide of chromium, molybdenum or tungsten.
8. the manufacture method of thin-film transistor according to claim 4, be to comprise: plating one deck and this negative photosensitive material has the release layer of repellence on this metal material.
9. the manufacture method of thin-film transistor according to claim 8, wherein this release layer is a Teflon.
10. the manufacture method of thin-film transistor according to claim 1 is to comprise: be to aim at this printing opacity masterplate and this glass substrate with a photo-sensitive cell before pressing down the printing opacity masterplate.
11. the manufacture method of thin-film transistor according to claim 10, wherein this photo-sensitive cell is sensitization coupling element or complementary matal-oxide semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410074226 CN1744293B (en) | 2004-09-03 | 2004-09-03 | Method for manufacturing thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410074226 CN1744293B (en) | 2004-09-03 | 2004-09-03 | Method for manufacturing thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1744293A CN1744293A (en) | 2006-03-08 |
| CN1744293B true CN1744293B (en) | 2011-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410074226 Expired - Fee Related CN1744293B (en) | 2004-09-03 | 2004-09-03 | Method for manufacturing thin film transistor |
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| Country | Link |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270524A (en) * | 2010-05-21 | 2011-12-07 | 中国科学院福建物质结构研究所 | Silver nano-wire transparent conducting film based on thermoplastic transparent polymer and preparation method thereof |
| CN105206564B (en) * | 2015-08-25 | 2019-01-15 | 武汉华星光电技术有限公司 | A kind of production method and array substrate of light shield layer |
| CN106611699A (en) * | 2015-10-22 | 2017-05-03 | 中芯国际集成电路制造(上海)有限公司 | A dual composition method and a manufacturing method for a semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1155158A (en) * | 1995-09-12 | 1997-07-23 | 三星航空产业株式会社 | Multi-layer circuit substrate and mfg. method thereof |
| CN1518774A (en) * | 2001-06-21 | 2004-08-04 | 三星电子株式会社 | Thin film transistor array panel and method for fabricating the same |
-
2004
- 2004-09-03 CN CN 200410074226 patent/CN1744293B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1155158A (en) * | 1995-09-12 | 1997-07-23 | 三星航空产业株式会社 | Multi-layer circuit substrate and mfg. method thereof |
| CN1518774A (en) * | 2001-06-21 | 2004-08-04 | 三星电子株式会社 | Thin film transistor array panel and method for fabricating the same |
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| Publication number | Publication date |
|---|---|
| CN1744293A (en) | 2006-03-08 |
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Granted publication date: 20110608 Termination date: 20190903 |