CN1739230B - A charge pump circuit - Google Patents
A charge pump circuit Download PDFInfo
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- CN1739230B CN1739230B CN200380108871.5A CN200380108871A CN1739230B CN 1739230 B CN1739230 B CN 1739230B CN 200380108871 A CN200380108871 A CN 200380108871A CN 1739230 B CN1739230 B CN 1739230B
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Abstract
A charge pump circuit has a voltage increasing stage and a voltage decreasing stage in parallel, and sharing a common input. This allows charge to flow between the stages, so that charge used in the pumping of one stage is recycled to the other stage.
Description
Invention field
The present invention relates to charge pump circuit.Particularly, the present invention relates to provide the charge pump circuit of the non-integral multiple voltage output of supply voltage.The invention still further relates to the electronic installation that comprises sort circuit, particularly but be not to be large area electron (LAE) device uniquely, as the Active Matrix Display of active array liquid crystal display (AMLCD) or other type.Semiconductor device or semiconductor integrated circuit are another kind of device forms, and wherein charge pump circuit for example can be integrated.
Background technology
Be well known that charge pump circuit is used for providing the direct voltage that has boosted from lower direct voltage source.The high level corrigendum of the comparable input supply voltage of this booster voltage, perhaps alternative, more negative than the low level of input supply voltage.Sort circuit can comprise a series of voltage-boosting stages, and each grade all comprises the switch that is connected to capacitor, this switch control electric charge flowing to capacitor.Sort circuit is for example disclosed in WO02/061930.The switch of each grade all is arranged on the input of this grade, and the output of each grade all is the node between switch and the capacitor.What input to circuit is the DC current source with low voltage amplitude.Capacitor alternately is connected in the clock control line of two complementations one, this clock control line control switch operation, and it has been controlled along the pumping action of the so-called electric charge of these grades.
In the course of work of circuit, clock cycle has formed a charge storage on capacitor, and these capacitors are connected in the control line and will arrive on of capacitor of corresponding next stage by it.Voltage on these capacitors little by little increases along these a series of voltage-boosting stages.More level causes producing the bigger output voltage that is used for circuit.
For given power supply, it has low voltage level Vss=0V (only being in order to illustrate) and high-voltage level V
DD, disclosed such charge pump circuit is used to produce voltage (n+1) V among the WO02/061930 under the situation of positive charge pump
DD, and under the situation of negative charge pump, produce voltage-nV
DD, wherein n is the integer that equals the progression in the charge pump.But, required output voltage often occurs and be not equal to supply voltage V
DDThis situation of integral multiple.In this case, be well known that and use additional circuit to regulate output voltage that this provides main restriction for the theoretical efficiency that can realize to required value.
For example, the single-stage positive charge pump with 5V input voltage under normal circumstances will produce the output voltage of 10V.If adjusted to drop to required 7.5V output voltage, then the maximum theoretical efficiency of this charge pump is reduced to 75%.
Patent US5790393 discloses a kind of charge pump circuit that is used to produce the branch several times size of supply voltage.For output voltage being reduced to the level of required branch several times size, the capacitor of storage pump electric charge and the building-out condenser of circuit output end are connected in parallel.Although this circuit is the working voltage adjuster not, also has the shortcoming that has limited maximum theoretical efficiency.
Except the branch several times size of voltage power line will be provided, also often need voltage to be higher than high-voltage power-line and voltage is lower than the low-tension supply line.
An example of the application of charge pump circuit is to be applied in the portable electron device with display screen.Display need use relative higher voltage, 15V for example, and this equipment will with relatively low voltage source for example 3V it is powered.Use increasing apparatus obviously to it seems it is very suitable as charge pump circuit.
Summary of the invention
According to the present invention, a kind of charge pump circuit is provided, comprising:
Voltage-boosting stage, wherein, voltage-boosting stage comprises at least one charge pump section;
The buck stages in parallel with voltage-boosting stage, wherein, buck stages comprises at least one charge pump section; With
Be connected to the shared input of boosting with buck stages,
Wherein, this charge pump section or each charge pump section in the voltage-boosting stage all comprise: first input switch of being connected in series at first node and output switch, be connected second input switch between the input and second node, be connected first charge pump capacitor between first node and first control line, and be connected second capacitor between second node and second control line, wherein second node is provided for the control signal of the first input and output switch; And
This charge pump section or each charge pump section in the buck stages all comprise: three-input switch of being connected in series at the 3rd node and output switch, be connected the 4th input switch between input and the 4th node, be connected second charge pump capacitor between the 3rd node and the 3rd control line, and be connected the 4th capacitor between the 3rd node and second control line, wherein the 4th node is provided for the control signal of the 3rd input and output switch.
In addition, this circuit can make the voltage of generation be not equal to the integral multiple of supply voltage.Particularly, the electric charge of using in the pumping action of a level can be recycled to other level, and this is because voltage-boosting stage and buck stages need the opposite charge pump effect of direction.Therefore, provide the effective device that produces required voltage.
This voltage-boosting stage preferably is used for input voltage is increased the integral multiple of difference between low power line voltage and the high power line voltage, and buck stages is the integral multiple that is used for input voltage is reduced difference between low power line voltage and the high power line voltage.By select input voltage on a value between the power line voltage, output voltage is the non-integral multiple of power line voltage.
Voltage-boosting stage can comprise one or more charge pump section, and each all is used for input voltage is increased the difference of hanging down between power line voltage and the high power line voltage.Similarly, buck stages can comprise one or more charge pump section, and each all is used for input voltage is reduced difference between low power line voltage and the high power line voltage.
Each charge pump section preferably includes: input switch of being connected in series at node and output switch, and be connected charge pump capacitor between node and the control line.
Each charge pump section can comprise: first input switch of being connected in series at first node and output switch, second input switch of being connected in series at second node and output switch, be connected first charge pump capacitor between first node and first control line, and be connected second charge pump capacitor between second node and second control line.Two pump circuits in parallel are provided like this, have made the pumping action that in all clock cycle, can carry out electric charge.
In another kind of set-up mode, each charge pump section in voltage-boosting stage and the buck stages can comprise: first input switch of being connected in series at first node and output switch, be connected second input switch between the input and second node, be connected first charge pump capacitor between first node and first control line, and be connected second capacitor between second node and second control line, wherein second node is provided for the control signal of the first input and output switch.
In this setup, a charge pump capacitor only is provided in each charge pump circuit, another capacitor is used to produce suitable switch controlling signal.Complementary signal is provided for first and second control lines once more.But, in two kinds of set-up modes, also can alternatively use non-overlapped signal.
The present invention also provides a kind of integrated circuit (IC) apparatus or other electronic installation, and it can form by for example using the low temperature polycrystalline silicon treatment process, and it comprises charge pump circuit of the present invention.This device can comprise active matrix liquid crystal display unit, the TFT switch arrays that have the charge pump circuit on the common substrate of being arranged on and be used to show.
Description of drawings
By example embodiments of the invention are described referring now to accompanying drawing, in the accompanying drawing:
Fig. 1 is the schematic circuit according to charge pump circuit of the present invention;
Fig. 2 shows the more detailed circuit diagram of a kind of way of realization of circuit shown in Fig. 1; With
Fig. 3 A and 3B are used to the work of circuit shown in the key-drawing 2 in more detail; With
Fig. 4 shows the more detailed circuit diagram of the another kind of way of realization of circuit shown in Fig. 1;
Fig. 5 is the schematic plan view that comprises the LAE device of display and charge pump circuit; With
Fig. 6 to 11 further schematically illustrates the alternative embodiment of charge pump circuit according to the present invention.
In all figure, represent identical or close feature with identical Reference numeral and symbol.
Embodiment
The invention provides a kind of circuit that can produce two (or may be more a plurality of) booster voltages, one of them booster voltage is with respect to supply voltage forward, and another booster voltage is on the negative sense with respect to supply voltage.In addition, this circuit can make these voltages equal the non-integral multiple of supply voltage.The effective ways that this provides a kind of generation for example to be used for the voltage of analog switch in this case, may need to produce the voltage above and below power rail, can correctly be turned on and off so that guarantee switch.In a large amount of analogue circuit applications, all need this ability.
Fig. 1 shows according to charge pump circuit of the present invention with illustration, is used to illustrate basic thought of the present invention.
This circuit comprises voltage-boosting stage 1 and buck stages 2.Each grade all has the input that is connected in series in this grade and the input switch device S between the voltage controling end separately 4,6
1A, S
2A(hereinafter be often expressed as S
NA) and charge pump capacitor C
P1, C
P2(hereinafter be often expressed as C
Pn).The output of each grade 1,2 is included in switching device S
NAWith capacitor C
PnBetween node.This node is by the output switch S
1B, S
2B(hereinafter be often expressed as S
NB) be connected to the output of this grade.
With the signal of complementation (Φ ' and/Φ ') conversion input and output switch S
NA, S
NB, make charge pump capacitor alternately be connected to the input 8 and the output of level.
The voltage of voltage controling end 4,6 can be changed between two level.This realizes for terminal 4,6 by provider's tooth waveform.Offer the voltage change voltage level of the voltage of control voltage end 4 and 6 according to high voltage source track and low-tension supply track.For example, but low-tension supply track ground connection.
(/ voltage on Φ) and the voltage complementation on another terminal 6 (Φ) make a signal have the polarity opposite with another signal, but at the same time by timing at a terminal 4.
Identical control signal waveform regularly can be used to control the input and output switch of control line 4,6.In other words, Φ can have the transformation identical with Φ '.Like this, work as C
P1Be connected to low-voltage and C
P2When being connected to high voltage, switch S 1A and S2A are closed (having Low ESR), S1B and S2B be opened (that is, having high impedance).Similarly, work as C
P1Be connected to high voltage and C
P2When being connected to low-voltage, switch S 1A and S2A are opened (having high impedance), and S1B and S2B are closed (having Low ESR).Control signal Φ ' and/actual nature of Φ ' depends on the character of switch.
In the course of work of each grade, the DC input voltage vin is applied to the input 8 of charge pump circuit.This voltage source provides average current, and this average current is approximately equal to the difference of the average load current that draws at output, so I (Vin)=I
L1-I
L2If I
L2Greater than I
L1, then Vin is with absorption current, if instead I
L1Greater than I
L2, then it will provide electric current.
Consider voltage-boosting stage 1 for example, as input switch S
1AWhen being closed, flow of charge capacitor C
P1, it is charged to input voltage (less than any voltage drop of striding switch).When control end 4 was connected to low control voltage (for example 0V) and input switch and is closed, electric charge was provided for capacitor.In the next clock cycle, and after the capacitor charging, switch S
1ABe opened, and the voltage on the control end is reversed.Then, capacitor C
P1On voltage will be added on the new higher voltage (for example 5V) on the control end 4, make the voltage that has increased appear at the output of level.
This output voltage that has increased is by closed output switch S
1BBe provided for output.
The similar mode of buck stages 2 usefulness among Fig. 1 is worked, just according in high and low power rail (as 0V among Fig. 1 and V
DDShown in) between the amplitude of voltage difference provide the stepping of voltage to reduce.
The required incipient stability of steady state power level that reaches them at output voltage realizes the operation of this circuit after the cycle.When electric charge is pumped and electric current when being provided for load along circuit, output voltage is fluctuation up and down near this steady state power level.Reduce the amplitude of this ripple by the size that is increased in the capacitor that the electric charge delivery side of pump connects.The pumping action operation of electric charge is known, therefore describes no longer in more detail.
According to the present invention, boost and buck stages 1,2 shared public input Vin.Input voltage vin is between the power rail voltage.In traditional circuit, the input of negative charge pump is connected to the low-tension supply track, and the input of positive charge pump is connected to high voltage source track V
DDBy two inputs are connected together, produced non-integral multiple supply voltage effectively, this is because the electric charge that injects by step-down charge pump can recirculation return boosting charge pump.The electric current minimum that must provide by voltage source vin is provided like this.
Provide decoupling capacitor C at output
L1And C
L2, and be connected to ground.In fact, these capacitors can be connected to arbitrarily on the Low ESR constant voltage source.The startup stage, decoupling capacitor is recharged (that is pumping) to output voltage.They are used for making the ripple minimum in the output voltage in the course of work (their big more then ripples are more little).Because each clock cycle C
L1And C
L2On electric charge just be filled once, so be sought after this point, but electric current is continuously drawn in load probably.Decoupling capacitor is likely not at outer member on glass.
To describe the course of work of circuit in more detail now, suppose, low power line voltage V
SSBe 0V, high power line voltage is V
DDCircuit among Fig. 1 produces positive output voltage Vout1=Vin+V
DD, and produce negative output voltage Vout2=Vin-V
DD, wherein Vin is 0 and V
DDBetween voltage.
Although the difference between Vout1 and the Vout2 always equals 2V
DD, but can be according to the value of Vin with the absolute level of Vout1 and Vout2 from respectively at the 2V of upper end separately
DDAnd adjust between the 0V respectively at the V of lower end separately
DDWith-V
DDBetween.This circuit provides the advantage that surpasses traditional scheme when required output voltage is between these two limits.This is towards the reverse iunjected charge of input voltage source Vin because of the negative charge pump that produces Vout2.But the positive charge pump that produces simultaneously, Vout1 draws electric charge from voltage source vin.Therefore, actual result is that electric charge from negative charge pump can recirculation return positive charge pump.
Fig. 1 also will be shown the first current source I by the loading liquifier of the driven of two generations
L1With the second current source I
L2, the first current source I
L1Be connected between the voltage and low power line voltage (being ground in this example) of rising the second current source I
L2Be connected between the voltage and low power line voltage that reduces.These load currents depend on the load by drives.
If load current I
L1And I
L2Equate then not have net current to flow to or flow out voltage source vin, this means that voltage source can be designed to have high impedance.At Vin is the voltage source with 100% efficient, and charge pump switches is desirable, and the pump capacitor is under the infinitely-great situation, as long as I
L1More than or equal to I
L2, then theoretical efficiency will equal 100%.If I
L1Less than I
L2, and the electric charge of injecting voltage source Vin cannot recirculation, then efficient meeting so reduction.
Circuit among Fig. 1 shows the charge pump that utilizes switch to form, but instead can use diode.And positive and negative charge pump illustrated in fig. 1 only has single level.
This principle can easily expand to be had in the multistage charge pump, and in this case, positive output voltage becomes Voutp=Vin+nV
DD(wherein n is the progression in the positive charge pump), negative output voltage becomes Voutn=Vin-mV
DD(wherein m is the progression in the negative charge pump).
In multistage the setting, flow to (or being pumped into) capacitor in next stage from the electric charge of the capacitor in the level.Capacitor in next stage has the opposite control voltage that offers it at this moment, makes the capacitor of this next stage have the voltage higher than the voltage on the capacitor in the previous stage.Like this, condenser voltage is along a series of grades of increases.
Voltage on capacitor will exceed the difference (voltage drop of ignoring on the switch is disregarded) between the control voltage than the voltage on the previous capacitor.Here it is so-called boosting.
In a succession of charge pump, by the adjacent pump of complementary control signal control, making has two voltage controling ends, each with not on the same group voltage-boosting stage be related.
The a plurality of positive charge pumps (each all has a plurality of levels) and a plurality of negative charge pump (each all has a plurality of levels) that are connected to same input voltage source Vin can also be arranged.And the standard that obtains optimum efficiency owing to the recirculation of electric charge is to inject the electric current that is fed back into voltage source vin by negative charge pump should be less than or equal to the electric current that draws from power supply Vin by positive charge pump.
Be recycled to positive arm in order to ensure electric current by negative arm correctly, may in the design of voltage source vin, note some problems from charge pump.Particularly, may need it is designed to have specific resistance and will uses decoupling capacitor at output.This is a kind of technique known.And, if the amplitude of load current makes electric current be drawn away from voltage source vin less than the amplitude of load current in the negative arm in the positive arm, wish that then Vin should be effective as much as possible.The circuit that is used for being created in effectively the voltage between the supply voltage also is known.For example capacitive divider circuit can produce V with desirable 100% efficient
DD/ 2 (supposition is desirable switch and infinitely-great capacitor).
The more detailed example of circuit way of realization has been shown among Fig. 2, and same, for brevity, each charge pump all is made up of single voltage-boosting stage.Output loading is expressed as resistor R in Fig. 2
L1And R
L2In Fig. 2, nmos pass transistor is expressed as " N ", and the PMOS transistor is expressed as " P ".
Voltage-boosting stage 1 and buck stages 2 utilize multi-crystal TFT (thin-film transistor) to realize, and are suitable for being integrated in the thin film transistor display that input supply voltage is 5V and 0V.This circuit be used to from these input voltages generation+7.5V and-voltage of 2.5V, these voltages need be used for cmos switch, can correctly be turned on and off to guarantee them.
Each the level 1,2 all with two charge pump capacitor C
P1a, C
P1bAnd C
P2a, C
P2bBe related.Each capacitor is connected to input transistors switch N
1a, N
1b, P
2a, P
2bWith the output transistor switch P
1b, P
1a, N
2a, N
2bBetween node on.Like this, each grade all comprises two charge pump constructions shown in Fig. 1 effectively, and setting is connected in parallel to each other.This structure makes it possible to can both carry out the pumping action of electric charge in all cycles.
Among Fig. 2, two charge pumps in parallel make it possible to produce simply suitable gate voltage to be used for the input and output switch, and described input and output switch is embodied as transistor.These gate voltages have the transformation that equates with clock transformation amplitude, but two level move the amount that (or moving down) equates with Vin on all.
Replacedly, these switches can be realized with diode, so then do not need control signal, and this is because turning on and off of diode is the natural result of charge pump circuit working method.
To describe the course of work of each grade with reference to figure 3A and 3B in detail.
Fig. 3 A shows each element of voltage-boosting stage 1.The low power rail of voltage supposition specified among the figure is that 0V and high power rail are 5V.It is low-voltage and the bottom control end is the high-tension cycle that Fig. 3 A shows therein the top control end.Do not provide the Reference numeral of transistor and capacitor among Fig. 3 A and the 3B, they with Fig. 2 in corresponding.Therefore the Reference numeral among Fig. 2 is used to represent corresponding elements among Fig. 3.Arrow among Fig. 3 A and the 3B is represented flow of charge.
2.5V the transistor N of input voltage by being switched on
1bWith top capacitor C
P1bBe charged to 2.5V.Equilibrium valve at output is 7.5V, as shown in FIG., and bottom capacitor C
P1aBy 2.5V voltage charging thereon, thereby present 7.5V at output.Electric charge is by transistor P
1aBe pumped into output, to keep output on this magnitude of voltage.
It is high voltage and the bottom control end is the cycle of low-voltage that Fig. 3 B shows thereon the top control end.
2.5V the transistor P of input voltage by being switched on
1aWith bottom capacitor C
P1aBe charged to 2.5V.Top capacitor C
P1bBy 2.5V voltage charging thereon, therefore present 7.5V at output.Electric charge is by transistor P
1bBe pumped into output, to keep output on this magnitude of voltage.
Therefore, this structure all provides the pumping action of electric charge in all clock cycle.
Buck stages 2 is operated in a like fashion, and just electric charge flows in the opposite direction.
As shown in Figure 2, the charge pump capacitor C of the charge pump section of the charge pump section of voltage-boosting stage 1 and buck stages 2 by being connected in series
P1aAnd C
P2aLink together, make wherein a control line at the node place.
Circuit among Fig. 2 all has two charge pump capacitors for each charge pump stage.These capacitors need have specific size to carry out charge pump operation, have increased the required area of circuit like this.
Fig. 4 shows a kind of way of realization of replacement, and it only has a pump capacitor C on each charge pump stage
P1And C
P2Each charge pump stage also only has an output switch P 1 and N2.Therefore, only carry out the pumping action of electric charge in the one-period in two cycles by each grade.
In voltage-boosting stage, only use an input switch N1b and capacitor C
Bs1Produce clock signal that level moves to drive the gate signal of other input switch N1a and output switch P 1.Similarly, in buck stages, only use input switch P2b and capacitor C
Bs2Produce the grid that clock signal that level moves is used for input switch P2a and output switch N2.
Because capacitor C
Bs1And C
Bs2Be not used to charge pump is delivered in the circuit, so their value can be much smaller than C
P1And C
P2This circuit is preferred, if particularly at C
P1And C
P2Value too big and they are integrated under the situation on glass.
Fig. 5 shows the integrated circuit (IC) apparatus 30 that comprises active matrix liquid crystal display unit, and it uses TFT switch arrays 32.These switch arrays and charge pump circuit 34 are set on the common substrate 36, and come to provide electric power to integrated circuit 36 with low-tension supply 38 (for example battery of 3V).
Fig. 6 show with Fig. 1 in identical basic charge pump circuit, the timing that just offers the control signal of switch S 1A, S1B, S2A, S2B and control end 4 and 6 has been modified.In this case, it is identical with the timing of the waveform that offers terminal 4 and 6 to offer the timing of control signal of S1B and S2A.This means that when terminal 4 and 6 was connected to high voltage level VDD and goes up, switch S 1B and S2A were closed (that is, having Low ESR), and switch S 1A and S2B be opened (that is, having high impedance).Otherwise when terminal 4 and 6 is connected to low voltage level, when being 0V in Fig. 6, switch S 1B and S2A are opened (that is, having high impedance), and switch S 1A and S2B are closed (that is, having Low ESR).This modification is regularly meaned after buck stages 2 is injected into, before this electric charge is recycled to voltage-boosting stage 1, the delay of half clock cycle is arranged at electric charge.In order to ensure the recirculation correctly of electric charge quilt, must be as previously mentioned with the voltage source vin uncoupling, here, this realizes by resistor R in and capacitor Cin.In fact, before electric charge was recycled to voltage-boosting stage 1, capacitor Cin played from the effect of the interim memory node of the electric charge of buck stages 2 injections.
Fig. 7 shows the possible circuit that is used to realize the schematic structure shown in Fig. 6.Identical among this circuit and Fig. 4 just revised offering C
P1, C
P2, C
Bs1And C
Bs2Clock signal, make this timing as shown in Figure 6.Fig. 7 also shows resistor R in and the capacitor Cin that is used to make the voltage source vin uncoupling clearly.
In described embodiment up to the present, the control signal that offers switch in the charge pump all is complementary with the voltage level that offers charge pump capacitor, this means, all transformations all take place simultaneously, make to be transformed into when high from hanging down when specific signal that its complementary switch is transformed into low from height.Be well known that, in some cases by using the control signal of not changing simultaneously can improve the efficient of charge pump.This is called as the non-overlapped control signal of use.Non-overlapped control signal can be used to guarantee that in the finite time that charge pump switches begins to change, electric charge can not leaked away by these charge pump switches on the direction of mistake.Remaining example shows non-overlapped control signal and how to be used with the present invention.
Fig. 8 show non-overlapped control signal φ a and the φ b with the charge pump switches of offering and the complementary waveform φ that offers terminal 6 and 4 and/schematic form of the charge pump of φ.When φ was transformed into high level, terminal 6 is connected to high power supply voltage and terminal 4 is connected to low supply voltage.In this transition process, all switch S 1A, S1B, S2A and S2B open (that is, having high impedance).After a delay period, the transformation among the φ a causes S1A and S2A closure, with capacitor C
P1And C
P2Be connected to Vin.After charge cycle, the further transformation among the φ a causes S1A and S2A to open.After a delay period, φ is transformed into low level, so terminal 6 is connected to low-tension supply, terminal 4 is connected to high voltage source.Then, after another delay period, the transformation of φ b causes S1B and S2B closure, with C
P1Be connected to C
L1, and with C
P2Be connected to C
L2After another charge cycle, the transformation of φ b causes S1B and S2B to open then.Constantly repeat this circulation, make C
L1And C
L2Be pumped on their output voltages separately as shown in Figure 8.
Fig. 9 shows the possible circuit that is used to realize the schematic structure shown in Fig. 8.Transistor N1b and capacitor C
Bs1aProduce the voltage signal that the level that is used to change charge pump transistor N1a moves together with control signal φ a.Transistor N1c and capacitor C
Bs1bProduce the voltage signal that is used to change charge pump transistor P1 together with control signal/φ b.Transistor P2b and capacitor C
Bs2aProduce the voltage signal that is used to change charge pump transistor P2a together with control signal/φ a.Transistor P2c and capacitor C
Bs2bProduce the voltage signal that is used to change charge pump transistor N2 together with control signal φ b.This circuit need produce 6 control signals, φ, φ a, φ b and their complementary signal.
Figure 10 shows the schematic form of the charge pump of non-overlapped control signal φ a and φ b with the charge pump switches of offering and the waveform φ that offers terminal 6 and 4.When φ was transformed into low level, terminal 4 and 6 was connected to low supply voltage.During this transfer, all switch S 1A, S1B, S2A and S2B open.After a delay period, the transformation of φ a causes S1A and S2B closure.This is with C
P1Be connected to Vin, and with C
P2Be connected to C
L2After a charge cycle, the further transformation of φ a causes S1A and S2B to open.After a delay period, φ is transformed into high level, so terminal 4 and 6 is connected to high voltage source.Then, after another delay period, the transformation of φ b causes S1B and S2A closure, with C
P1Be connected to C
L1, and with C
P2Be connected to Vin.After another charge cycle, the transformation of φ b causes S1B and S2A to open then.Constantly repeat this circulation, make C
L1And C
L2Be pumped on their output voltages separately as shown in Figure 8.
Figure 11 shows the possible circuit that is used to realize the schematic structure shown in Figure 10.Identical among basic circuit and Fig. 9 just revised control signal, make circuit on off sequence as shown in Figure 10.The advantage of this circuit is, compares with six control signals that are used for circuit shown in Fig. 9, and this circuit only need produce three control signal φ, φ a and φ b.Description as Fig. 6 is described, need provide the uncoupling of Vin correctly to be recycled to boosting charge pump from step-down charge pump to guarantee electric charge by Rin in Figure 10 and 11 and Cin.
As previously mentioned, charge pump circuit of the present invention can be used in the large area electron device, as active matrix display device and similar device.
But charge pump circuit also can use with the device of other type.In fact, charge pump is at many application that other all can find in using circuit very widely.But example comprises and is used for generation fast storage and able to programme and erasing voltage low-voltage ic, and the analog switch in low-voltage ic may need the voltage that raises.Charge pump also can be used in the integral control circuit of semiconductor power switch.This power switch for example can be MOSFET.Certainly also having many more applications and various other to revise those skilled in the art all will be clearly.
Claims (12)
1. charge pump circuit comprises:
Voltage-boosting stage (1), wherein, voltage-boosting stage (1) comprises at least one charge pump section;
The buck stages in parallel (2) with voltage-boosting stage, wherein, buck stages (2) comprises at least one charge pump section; With
Be connected to the shared input (8) of boosting with buck stages,
Wherein, this charge pump section or each charge pump section in the voltage-boosting stage (1) all comprise: first input switch (N1a) of connecting between the output (Vout1) of shared input (8) and voltage-boosting stage and the first output switch (P1), be connected second input switch (N1b) between the shared input (8) and second node, be connected the first charge pump capacitor (C between first node and first control line
P1), and be connected the second capacitor (C between second node and second control line
Bs1), wherein, first node is positioned between first input switch (N1a) and the first output switch (P1), and second node is provided for the control signal of first input switch (N1a) and the first output switch (P1); And
This charge pump section or each charge pump section in the buck stages (2) all comprise: three-input switch (P2a) of connecting between the output (Vout2) of shared input (8) and buck stages and the 3rd output switch (N2), be connected the 4th input switch (P2b) between shared input (8) and the 4th node, be connected the second charge pump capacitor (C between the 3rd node and first control line
P2), and be connected the 4th capacitor (C between the 4th node and second control line
Bs2), wherein the 3rd node is positioned between three-input switch (P 2a) and the 3rd output switch (N2), and the 4th node is provided for the control signal of three-input switch (P2a) and the 3rd output switch (N2).
2. the circuit described in claim 1, wherein, voltage-boosting stage is used for input voltage is increased low power line voltage (V
SS) and high power line voltage (V
DD) between the integral multiple of difference, buck stages is used for input voltage is reduced low power line voltage (V
SS) and high power line voltage (V
DD) between the integral multiple of difference.
3. the circuit described in claim 1, wherein, voltage-boosting stage (1) comprises a plurality of charge pump section, each all is used for input voltage is increased difference between low power line voltage and the high power line voltage.
4. the circuit described in claim 1, wherein, buck stages comprises a plurality of charge pump section, each all is used for input voltage is reduced difference between low power line voltage and the high power line voltage.
5. the circuit described in claim 1 wherein, is applied to first and second control lines with the signal of complementation.
6. the circuit described in claim 1 wherein, is applied to first and second control lines with non-overlapped signal.
7. as claim 5 or 6 described circuit, wherein, first input switch and output switch (N1a, P1) are worked in the mode of complementation.
8. as claim 5 or 6 described circuit, wherein, in the voltage-boosting stage in first charge pump capacitor of at least one charge pump section and the buck stages the 4th capacitor of at least one charge pump section link together.
9. the circuit described in claim 1, wherein, voltage-boosting stage (1) is used for input voltage is increased the integral multiple of difference between low power line voltage and the high power line voltage, buck stages (2) is used for input voltage is reduced the integral multiple of difference between low power line voltage and the high power line voltage, and wherein, the voltage between low power line voltage and high power line voltage with a voltage source (Vin) is applied on the shared input (8).
10. an electronic installation (30) comprises as described above any described circuit (34) in the claim.
11. the device described in claim 10, wherein this device (30) comprises LCD.
12. the device described in claim 11, wherein, this circuit (34) and the TFT switch arrays (32) that are used to show are set at common substrate (36).
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0301077A GB0301077D0 (en) | 2003-01-17 | 2003-01-17 | A charge pump circuit |
| GB0301077.4 | 2003-01-17 | ||
| GB0314644A GB0314644D0 (en) | 2003-01-17 | 2003-06-24 | A charge pump circuit |
| GB0314644.6 | 2003-06-24 | ||
| PCT/IB2003/006352 WO2004066478A1 (en) | 2003-01-17 | 2003-12-24 | A charge pump circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1739230A CN1739230A (en) | 2006-02-22 |
| CN1739230B true CN1739230B (en) | 2010-06-23 |
Family
ID=9951309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200380108871.5A Expired - Fee Related CN1739230B (en) | 2003-01-17 | 2003-12-24 | A charge pump circuit |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1739230B (en) |
| GB (2) | GB0301077D0 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488709B (en) * | 2009-02-13 | 2011-01-12 | 中国航天时代电子公司第七七一研究所 | Charge pump circuit based on PDSOI process |
| CN102510212B (en) * | 2011-11-30 | 2013-10-23 | 中国科学院微电子研究所 | Dual-channel output charge pump circuit |
| TWI499182B (en) * | 2013-11-20 | 2015-09-01 | Sitronix Technology Corp | Method of reusing electrical energy and related driving circuit |
| CN109361384B (en) * | 2018-12-20 | 2023-09-19 | 上海艾为电子技术股份有限公司 | Analog switch circuit |
| CN109756107A (en) * | 2019-01-31 | 2019-05-14 | 深圳市爱协生科技有限公司 | A kind of efficient charge pump circuit structure |
| CN113300590B (en) * | 2021-06-03 | 2023-04-25 | 上海南芯半导体科技股份有限公司 | Charge pump parallel current equalizing circuit based on duty ratio control |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5831844A (en) * | 1996-08-15 | 1998-11-03 | Nec Corporation | High voltage generating circuit able to generate positive high voltage and negative high voltage at the same time |
| US6107864A (en) * | 1998-08-24 | 2000-08-22 | Mitsubishi Denki Kabushiki Kaisha | Charge pump circuit |
| CN1081825C (en) * | 1993-12-17 | 2002-03-27 | 株式会社日立制作所 | Semiconductor intefgrated circuit device |
-
2003
- 2003-01-17 GB GB0301077A patent/GB0301077D0/en not_active Ceased
- 2003-06-24 GB GB0314644A patent/GB0314644D0/en not_active Ceased
- 2003-12-24 CN CN200380108871.5A patent/CN1739230B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1081825C (en) * | 1993-12-17 | 2002-03-27 | 株式会社日立制作所 | Semiconductor intefgrated circuit device |
| US5831844A (en) * | 1996-08-15 | 1998-11-03 | Nec Corporation | High voltage generating circuit able to generate positive high voltage and negative high voltage at the same time |
| US6107864A (en) * | 1998-08-24 | 2000-08-22 | Mitsubishi Denki Kabushiki Kaisha | Charge pump circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0301077D0 (en) | 2003-02-19 |
| CN1739230A (en) | 2006-02-22 |
| GB0314644D0 (en) | 2003-07-30 |
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