CN1728411A - Bse for packaging high-powered semiconductor light emiitting diode with high thermolysis efficiency - Google Patents
Bse for packaging high-powered semiconductor light emiitting diode with high thermolysis efficiency Download PDFInfo
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- CN1728411A CN1728411A CNA2005100407644A CN200510040764A CN1728411A CN 1728411 A CN1728411 A CN 1728411A CN A2005100407644 A CNA2005100407644 A CN A2005100407644A CN 200510040764 A CN200510040764 A CN 200510040764A CN 1728411 A CN1728411 A CN 1728411A
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- Prior art keywords
- heat sink
- pedestal
- concrete embodiment
- base
- encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Main features of the invention are that under condition of keeping outline size of packaging base seat unchanged, and easy of production in large scale, contact area of heat sink base is enlarged. Main technical steps are as follows: fabricating molded slices of metal bracket; injection molding slices of metal bracket forms slices of packaging base (not including heat sink), spot gluing on back face of each packaging base, and putting heat sink in each packaging base, and placing solidification glue. The invention is applicable to packaging bases for other semiconductor chips and devices.
Description
Technical field
The present invention discloses the novel heat sink packing base for large power semiconductor LED with high cooling efficiency and the technology and the technology of production thereof, belongs to the semiconductor electronic technical field.
Background technology
Large power semiconductor LED has the huge future that replaces incandescent lamp, and still, when power increased, the radiating efficiency of the encapsulation of power semiconductor light-emitting diode still needed to improve.
For solving the heat dissipation problem of encapsulation, a method that achieves noticeable achievement is to improve heat sink radiating efficiency.The encapsulation base of the large power semiconductor LED of the Lumileds company that figure l shows.But the heat sink radiating efficiency of this encapsulation base can further improve.
Therefore, the process that needs novel heat sink encapsulation base and low-cost batch to produce with high cooling efficiency, the manufacturing technique method that obtains thus can be applied to other semiconductor chip or device.
Summary of the invention
The present invention discloses several heat sink encapsulation bases with high cooling efficiency of different structure, and the process of producing.Principal character is as follows: under and the situation that is easy to produce in batches constant in the overall dimension that keeps existing encapsulation base, enlarge the contact area of heat sink bottom to greatest extent.The main technique step is as follows: make metallic support mould bar, injection moulding metallic support mould bar forms encapsulation base mould bar (not comprising heat sink), at the back side point glue of each encapsulation base, is placed in each encapsulation base heat sink, solidifies glue.The novel high-power semiconductor light-emitting-diode encapsulation base (comprising heat sink) that the present invention discloses also can be applied to the encapsulation base of other semiconductor chips or device.
Purpose of the present invention and every effect that can reach are as follows:
(1) the purpose of this invention is to provide and have novel heat sink packing base for large power semiconductor LED.
(2) novel high-power semiconductor light-emitting-diode encapsulation base provided by the invention has high cooling efficiency.
(3) the purpose of this invention is to provide the process of producing novel high-power semiconductor light-emitting-diode encapsulation base in batches.
The present invention and its feature and benefit will better be showed in the following detailed description.
Description of drawings
Fig. 1 is the sectional view of high-power LED encapsulation pedestal formerly.
Fig. 2 a is the sectional view with first concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 2 b is the sectional view with second concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 3 a is the sectional view with the 3rd concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 3 b is the sectional view with the 4th concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 4 a is the sectional view with the 5th concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 4 b is the sectional view with the 6th concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 5 a is the sectional view with the 7th concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 5 b is the sectional view with the 8th concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 6 a is the sectional view with the 9th concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 6 b is the sectional view with the tenth concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 7 a is the sectional view with the 11 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 7 b is the sectional view with the 12 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 8 a is the sectional view with the 13 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 8 b is the sectional view with the 14 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 9 a is the sectional view with the 15 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Fig. 9 b is the sectional view with the 16 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 10 a is the sectional view with the 17 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 10 b is the sectional view with the 18 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 11 a is the sectional view with concrete embodiment of nineteen of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 11 b is the sectional view with the 20 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 12 a is the sectional view with the 21 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 12 b is the sectional view with the 22 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 13 a is the sectional view with the 23 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 13 b is the sectional view with the 24 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 14 a is the sectional view with the 25 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 14 b is the sectional view with the 26 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 15 a is the sectional view with the 27 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 15 b is the sectional view with the 28 concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention.
Figure 16 a is the single metallic support that production of the present invention has novel heat sink high-power LED encapsulation pedestal.
Figure 16 b is many rows metallic support that production of the present invention has novel heat sink high-power LED encapsulation pedestal.
Figure 16 c is the single base seat support that production of the present invention has novel heat sink high-power LED encapsulation pedestal.
Figure 16 d is many rows base seat support that production of the present invention has novel heat sink high-power LED encapsulation pedestal.
Figure 17 is the technological process that production of the present invention has novel heat sink high-power LED encapsulation pedestal.
The detailed description of concrete embodiment and invention
Though specific embodiment of the present invention will be described below, following description just illustrates principle of the present invention, rather than limits the invention to the description of following specific embodiment.
Note,
(1) show among the figure to have novel heat sink high-power LED encapsulation pedestal be schematic diagram.
(2) Fig. 8 shows and produces technology and the technology with novel heat sink high-power LED encapsulation pedestal.But identical technology and technology can be applied to the production of other semiconductor light-emitting-diode encapsulation base.
(3) overall dimension of heat sink bottom surface can equal or work energetically the overall dimension of the parts of plastics of encapsulation base.
(4) heat sink material of the present invention includes, but not limited to the metal and the nonmetallic materials of high heat conductance.The metal material of high heat conductance includes, but not limited to copper, aluminium, the metal alloy of high heat conductance.Nonmetallic Materials with High Thermal Conductivities includes, but not limited to aluminium nitride, silicon wafer.
(5) shape at novel heat sink top includes, but not limited to the plane, linear reflective cup, nonlinear reflection cup.
(6) the encapsulation base matrix comprises one or more encapsulation base mould bars, and each encapsulation base mould bar comprises a plurality of encapsulation bases.
(7) shape of encapsulation base include, but not limited to square, rectangle, circle, Duo circle.
Fig. 1 shows the encapsulation base of traditional large power semiconductor LED.Electrode 102 and 103 is enclosed in the pedestal 101, mutually electric insulation.Led chip 106 is layered on heat sink 108 the reflector 107, and gold thread 104 and 105 is connected to electrode 102 and 103 with chip 106 respectively.The overall dimension of heat sink 108 bottom 109 is less than the overall dimension of pedestal 101.Therefore, the radiating efficiency of the encapsulation base of traditional large power semiconductor LED can further improve.
Fig. 2 a shows first concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention.Electrode 202 and 203 is enclosed in the pedestal 201, mutually electric insulation.Led chip 206 is layered on heat sink 208 the reflector 207, and gold thread 204 and 205 is connected to electrode 202 and 203 with chip 206 respectively.The difference of the pedestal that first concrete embodiment and Fig. 1 are traditional is, the overall dimension of heat sink 208 bottom 209 is identical with the overall dimension of pedestal 201, therefore, heat sink 208 area of dissipation approximately increases by 50% than the heat sink area of dissipation of traditional large power semiconductor LED, radiating efficiency with novel heat sink high-power LED encapsulation pedestal improves, and thermal resistance reduces.
Notice that the shape of the reflecting surface of reflector 207 includes, but not limited to linear reflective face, nonlinear reflection face.
Fig. 2 b shows second concrete embodiment of novel heat sink high-power LED encapsulation pedestal of the present invention, it is that with first concrete embodiment different the overall dimension of heat sink 218 bottom 219 of second concrete embodiment is bigger than the overall dimension of pedestal 201, therefore, radiating efficiency with novel heat sink high-power LED encapsulation pedestal further improves, and thermal resistance further reduces.
Fig. 3 a shows the 3rd concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with first concrete embodiment different heat sink 308 top 307 of the 3rd concrete embodiment is the plane.
Fig. 3 b shows the 4th concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 3rd concrete embodiment different the size of heat sink 318 bottom 319 of the 4th concrete embodiment is greater than the size of plastic base 301.
Fig. 4 a shows the 5th concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with first concrete embodiment different the electrode 402 of the 5th concrete embodiment and 403 end 410 and 411 are enhanced respectively so that reduce and the difference in height on the surface of chip 406.
Fig. 4 b shows the 6th concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 5th concrete embodiment different the size of heat sink 418 bottom 419 of the 6th concrete embodiment is greater than the size of plastic base 401.
Fig. 5 a shows the 7th concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 5th concrete embodiment different heat sink 508 top 507 of the 7th concrete embodiment is the plane.
Fig. 5 b shows the 8th concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 7th concrete embodiment different the size of heat sink 518 bottom 519 of the 8th concrete embodiment is greater than the size of pedestal 501.
Fig. 6 a shows the 9th concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with first concrete embodiment different heat sink 608 neck 610 of the 9th concrete embodiment is lowered so that reduce electrode 602 and 603 and the difference in height on the surface of chip 606.
Fig. 6 b shows the tenth concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 9th concrete embodiment different the size of heat sink 618 bottom 619 of the tenth concrete embodiment is greater than the size of pedestal 601.
Fig. 7 a shows the 11 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 9th concrete embodiment different heat sink 708 top 707 of the 11 concrete embodiment is the plane.
Fig. 7 b shows the 12 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 11 concrete embodiment different the size of heat sink 718 bottom 719 of the 12 concrete embodiment is greater than the size of pedestal 701.
Fig. 8 a shows the 13 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and electrode 802 and 803 is enclosed in the pedestal 801, mutually electric insulation.Electrode 802 and 803 is formed routing pad 810 and 811 by respectively bendings, and routing pad 810 and 811 end points are by bending respectively and be enclosed in the encapsulation base 801.Led chip 806 is layered on heat sink 808 the reflector 807, and gold thread 804 and 805 is connected respectively to chip 806 on routing pad 810 and 811.Reflector 807 has recessed portion, and the recessed portion of reflector 807 is added full by fluorescent material/silica-gel mixture, and the surface of pedestal 801 does not have other recessed portion, when pedestal 801 docks with the lens that add full silica gel, does not have air to be enclosed between pedestal 801 and the lens.The overall dimension of heat sink 808 bottom 809 equals the overall dimension of pedestal 801.
Notice that the shape of the reflecting surface of reflector 807 includes, but not limited to linear reflective face, nonlinear reflection face.
Fig. 8 b shows the 14 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 13 concrete embodiment different the size of heat sink 818 bottom 819 of the 14 concrete embodiment is greater than the size of pedestal 801.
Fig. 9 a shows the 15 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the different of the 13 concrete embodiment the edge of the encapsulation base of the 15 concrete embodiment is a step 911.Step 911 is when the butt joint lens, is lens position.
Fig. 9 b shows the 16 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 15 concrete embodiment different the size of heat sink 918 bottom 919 of the 16 concrete embodiment is greater than the size of pedestal 901.
Figure 10 a shows the 17 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 13 concrete embodiment different heat sink 1008 top 1007 of the 17 concrete embodiment is the plane.
Figure 10 b shows the 18 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 17 concrete embodiment different the size of heat sink 1018 bottom 1019 of the 18 concrete embodiment is greater than the size of pedestal 1001.
Figure 11 a shows the concrete embodiment of nineteen with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the different of the 17 concrete embodiment the edge of the encapsulation base of the concrete embodiment of nineteen is a step 1111.Step 1111 is when the butt joint lens, is lens position.
Figure 11 b shows the 20 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the concrete embodiment of nineteen different the size of heat sink 1118 bottom 1119 of the 20 concrete embodiment is greater than the size of pedestal 1101.Heat sink 1118 thickness can be different, and for example, heat sink 1118 thickness of the 20 concrete embodiment is greater than heat sink 1018 thickness of the 17 concrete embodiment.
Figure 12 a shows the 21 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and electrode 1202 and 1203 is enclosed in the pedestal 1201, mutually electric insulation.Electrode 1202 and 1203 is formed routing pad 1210 and 1211 by respectively bendings, and routing pad 1210 and 1211 end points are by bending respectively and be enclosed in the encapsulation base 801.Led chip 1206 is layered on heat sink 1208 the reflector 1207, and gold thread 1204 and 1205 is connected respectively to chip 1206 on routing pad 1210 and 1211.Reflector 1207 has recessed portion, the recessed portion of reflector 1207 is added full by fluorescent material/silica-gel mixture, the surface of pedestal 1201 does not have other recessed portion, when pedestal 1201 docks with the lens that add full silica gel, does not have air to be enclosed between pedestal 1201 and the lens.The overall dimension of heat sink 1208 bottom 1209 equals the overall dimension of pedestal 801.The submarginal part 1212 of the upper surface of pedestal 1201 is downward-sloping, and this shape more helps the discharge of air when the butt joint lens.
Figure 12 b shows the 22 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 21 concrete embodiment different the size of heat sink 1218 bottom 1219 of the 22 concrete embodiment is greater than the size of pedestal 1201.
Figure 13 a shows the 23 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the different of the 21 concrete embodiment the edge of the encapsulation base of the 23 concrete embodiment is a step 1311.Step 1311 is when the butt joint lens, is lens position.
Figure 13 b shows the 24 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 23 concrete embodiment different the size of heat sink 1318 bottom 1319 of the 24 concrete embodiment is greater than the size of pedestal 1301.
Figure 14 a shows the 25 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 21 concrete embodiment different heat sink 1408 top 1407 of the 25 concrete embodiment is the plane.
Figure 14 b shows the 26 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 25 concrete embodiment different the size of heat sink 1418 bottom 1419 of the 26 concrete embodiment is greater than the size of pedestal 1401.
Figure 15 a shows the 27 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the different of the 25 concrete embodiment the edge of the encapsulation base of the 27 concrete embodiment is a step 1511.Step 1511 is when the butt joint lens, is lens position.
Figure 15 b shows the 28 concrete embodiment with novel heat sink high-power LED encapsulation pedestal of the present invention, and it is that with the 27 concrete embodiment different the size of heat sink 1518 bottom 1519 of the 28 concrete embodiment is greater than the size of pedestal 1501.
Figure 16 a shows metallic support matrix of the present invention.Metallic support matrix 1601 only comprises a metallic support mould bar, and metallic support mould bar comprises electrode 1602.
Figure 16 b shows metallic support matrix of the present invention.Metallic support matrix 1611 comprises two disjunctor metallic support mould bars 1613 and 1614, and disjunctor metallic support mould bar 1613 and 1614 comprises electrode 1612.
Notice that though the metallic support matrix 1601 and 1611 among Figure 16 a and Figure 16 b comprises one and two disjunctor metallic support mould bars respectively, the metallic support matrix can comprise the disjunctor metallic support mould bar more than two.
Figure 16 c shows encapsulation base matrix of the present invention.Encapsulation base matrix 1621 only comprises an encapsulation base mould bar.Encapsulation base mould bar comprises encapsulation base 1623 and electrode 1622, and electrode 1622 is enclosed in respectively in the corresponding encapsulation base 1623.
Figure 16 d shows encapsulation base matrix of the present invention.Encapsulation base matrix 1631 comprises two disjunctor encapsulation base mould bars 1634 and 1635.Disjunctor encapsulation base mould bar 1634 and 1635 comprises encapsulation base 1633 and electrode 1632 respectively, and electrode 1632 is enclosed in respectively in the corresponding encapsulation base 1633.
Attention: (1) though the encapsulation base matrix 1621 and 1631 among Figure 16 c and Figure 16 d comprises one and two disjunctor encapsulation base mould bars respectively, the encapsulation base matrix can comprise the disjunctor encapsulation base mould bar more than two.
(2) distance between two encapsulation bases on the encapsulation base matrix depends on encapsulation base/heat sink size.
Figure 17 shows that low-cost batch production of the present invention has a concrete embodiment of the technological process of novel heat sink high-power LED encapsulation pedestal.Same method can be applied to the production of other semiconductor light-emitting-diode encapsulation base.
Technological process 1701: preparation metallic support matrix.Utilize metal stamping technology, preparation metallic support matrix.The material of metallic support matrix includes, but not limited to copper, iron, copper alloy (including, but are not limited to brass, phosphor-copper), ferroalloy.The thickness of metallic support matrix is 0.1 to 0.5 millimeter.
Technological process 1702: the injection moulding of metallic support matrix, manufacturing and encapsulation pedestal matrix.Utilize injection molding process,, make the encapsulation base matrix in the corresponding site injection moulding of metallic support matrix.
Technological process 1703: some glue.The corresponding site point glue of each encapsulation base on the encapsulation base matrix.Dispensing method comprises, and is manual, semi-automatic, full-automatic.
Technological process 1704: place heat sink.The corresponding site of each encapsulation base on the encapsulation base matrix is placed heat sink, and compresses, and makes glue fully contact with encapsulation base with heat sink.
Technological process 1705: Gu glue.Under the condition of appointment, solidify glue, make glue heat sink bonding with encapsulation base.
Notice that make to stick with glue to connect heat sink and purpose encapsulation base is: (1) is heat sink and encapsulation base links together; (2) gluingly can prevent that moisture from entering encapsulation base.
Top concrete description does not limit the scope of the invention, and only provides some specific illustrations of the present invention.Therefore covering scope of the present invention should be determined by claim and their legal equivalents, rather than by above-mentioned specific detailed description and embodiment decision.
Claims (8)
1. the novel heat sink packing base for large power semiconductor LED with high cooling efficiency comprises pedestal;
Two electrodes, wherein, described two electrodes are enclosed in the pedestal, described two mutual electric insulations of electrode;
Heat sink; Wherein, the overall dimension of described heat sink bottom is equal to or greater than the overall dimension of pedestal.
2. the novel heat sink packing base for large power semiconductor LED with high cooling efficiency of claim 1, wherein, the upper surface of described heat sink stacked led chip has reflector.
3. the novel heat sink packing base for large power semiconductor LED with high cooling efficiency of claim 2, wherein, described reflector is the linear reflective cup.
4. the novel heat sink packing base for large power semiconductor LED with high cooling efficiency of claim 2, wherein, described reflector is the nonlinear reflection cup.
5. the novel heat sink packing base for large power semiconductor LED with high cooling efficiency of claim 1, wherein, described heat sink upper surface is the plane.
6. the novel heat sink packing base for large power semiconductor LED with high cooling efficiency of claim 1, wherein, the profile of described pedestal is circular.
7. the novel heat sink packing base for large power semiconductor LED with high cooling efficiency of claim 1, wherein, the profile of described pedestal is square.
8. technology of producing novel heat sink packing base for large power semiconductor LED with high cooling efficiency, comprise following technological process: (1) preparation metallic support matrix, the material of metallic support matrix includes, but not limited to copper, iron, copper alloy (including, but are not limited to brass, phosphor-copper), ferroalloy, the thickness of metallic support matrix are 0.1 to 0.5 millimeter; (2) utilize injection molding process,, make the encapsulation base matrix in the corresponding site injection moulding of metallic support matrix; (3) the corresponding site point glue of each encapsulation base on the encapsulation base matrix, dispensing method comprise, and is manual, semi-automatic, full-automatic; (4) placement of the corresponding site of each encapsulation base on the encapsulation base matrix is heat sink, and compresses, and makes glue fully contact with encapsulation base with heat sink; (5) under the condition of appointment, solidify glue, make glue heat sink bonding with encapsulation base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100407644A CN1728411A (en) | 2005-06-24 | 2005-06-24 | Bse for packaging high-powered semiconductor light emiitting diode with high thermolysis efficiency |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100407644A CN1728411A (en) | 2005-06-24 | 2005-06-24 | Bse for packaging high-powered semiconductor light emiitting diode with high thermolysis efficiency |
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|---|---|
| CN1728411A true CN1728411A (en) | 2006-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2005100407644A Pending CN1728411A (en) | 2005-06-24 | 2005-06-24 | Bse for packaging high-powered semiconductor light emiitting diode with high thermolysis efficiency |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7528414B2 (en) | 2006-10-02 | 2009-05-05 | Industrial Technology Reseach Institute | Light emitting diode package structure |
| CN101471411B (en) * | 2007-12-26 | 2010-06-23 | 特新光电科技股份有限公司 | Method for producing LED stent |
| CN101779303B (en) * | 2008-05-20 | 2011-06-15 | 松下电器产业株式会社 | Semiconductor light-emitting device as well as light source device and lighting system including the same |
| CN101619186B (en) * | 2009-08-07 | 2011-07-27 | 西安大天科技股份有限公司 | Solvent matte transfer aluminium-plating coating and preparation method thereof |
| CN102475003A (en) * | 2010-03-31 | 2012-05-23 | 松下电器产业株式会社 | Mounting-line power control device and mounting-line power control method |
| CN102479763A (en) * | 2010-11-22 | 2012-05-30 | 钰桥半导体股份有限公司 | Stackable semiconductor assembly with bump/flange heat spreader and dual build-up circuitry |
| CN106939967A (en) * | 2017-03-24 | 2017-07-11 | 上海舒颜光电科技有限公司 | Packaged LED lamp and method for packing |
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2005
- 2005-06-24 CN CNA2005100407644A patent/CN1728411A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7528414B2 (en) | 2006-10-02 | 2009-05-05 | Industrial Technology Reseach Institute | Light emitting diode package structure |
| CN101471411B (en) * | 2007-12-26 | 2010-06-23 | 特新光电科技股份有限公司 | Method for producing LED stent |
| CN101779303B (en) * | 2008-05-20 | 2011-06-15 | 松下电器产业株式会社 | Semiconductor light-emitting device as well as light source device and lighting system including the same |
| CN101619186B (en) * | 2009-08-07 | 2011-07-27 | 西安大天科技股份有限公司 | Solvent matte transfer aluminium-plating coating and preparation method thereof |
| CN102475003A (en) * | 2010-03-31 | 2012-05-23 | 松下电器产业株式会社 | Mounting-line power control device and mounting-line power control method |
| CN102475003B (en) * | 2010-03-31 | 2014-12-17 | 松下电器产业株式会社 | Mounting-line power control device and mounting-line power control method |
| US8918194B2 (en) | 2010-03-31 | 2014-12-23 | Panasonic Corporation | Mounting-line power control device and mounting-line power control method |
| CN102479763A (en) * | 2010-11-22 | 2012-05-30 | 钰桥半导体股份有限公司 | Stackable semiconductor assembly with bump/flange heat spreader and dual build-up circuitry |
| CN106939967A (en) * | 2017-03-24 | 2017-07-11 | 上海舒颜光电科技有限公司 | Packaged LED lamp and method for packing |
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