CN1714318A - Quasi-CW diode-pumped, solid-state UV laser system and method employing same - Google Patents
Quasi-CW diode-pumped, solid-state UV laser system and method employing same Download PDFInfo
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- CN1714318A CN1714318A CNA028064038A CN02806403A CN1714318A CN 1714318 A CN1714318 A CN 1714318A CN A028064038 A CNA028064038 A CN A028064038A CN 02806403 A CN02806403 A CN 02806403A CN 1714318 A CN1714318 A CN 1714318A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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- Lasers (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laser Beam Processing (AREA)
Abstract
A quasi-CW diode- or lamp-pumped, A-O Q-switched solid-state UV laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the average pumping power to the laser medium (16), and thermal loading of the laser pumping diodes (14), remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.
Description
Related application
Present application for patent is advocated right of priority 60/275, No. 246 according to the U.S. Provisional Patent Application of being applied for March 12 calendar year 2001.
The literary property announcement
2001 Electro Scientific Industries; Inc.; the part of this patent document discloses and contains the material of accepting copyright protection; the owner of literary property does not oppose the things that this patent document of anyone facsimile copy or patent disclose; as long as it is published in the patent filing or the record of patent and trademark office, otherwise will keep the right of all literary propertys.37?CFR§1.71(d)。
Technical field
The relevant diode-pumped solid laser of the present invention, and relevant especially such as be used to form through hole in circuit board quasi c. w. diode pumping Ultra-Violet Laser system and use its disposal route.
Background of invention
Multi-form laser system has been used in drilled via in such as the electronic installation of printed circuit board (PCB) (PCBs) or the point-to-point target area place on the workpiece.Hereinafter explaining orally is example with diode-pumped solid ultraviolet (UV) laser system and workpiece target only, and should not be considered as limiting the present invention's category.
When using such as comprising light wave electronics (LWE) model is that ElectroScientific Industries Inc. (ESI) model of 210 laser instrument is 5200 acousto-optic (A-Q) Q-switch formula, continuous wave (CW) diode pumping (DP) solid (SS) is when laser system produces through hole, and this pump diode or diode can be kept active state constantly.When no matter when needing only target region new on the positioning system sensing electronic installation, stop Laser emission by closing Q-switch.After this positioning system was aimed at new target area, laser system will be by opening Q-switch and launch the laser output that contains one or more laser pulses with a predetermined repetition rate.
LWE model 210 is used the continuous wave that is used for pumping (CW) diode of two 20 watts (W) and is produced 3 watts ultraviolet ray (UV) output power with the repetition rate of 10KHz.The continuous wave pump current limited that arrives diode is in the heat load of diode.If one when use guaranteeing bigger ultraviolet output power, the diode that then must use multiple diode more or have higher current/power is as the diode of two 30 watts of diode laser bars (diode laser bars) or four 20 watts of diode laser bars.This type of design is expected the ultraviolet output power that reaches about 8 watts.Yet, if use higher pump power, then can increase the heat load on the solid laser medium, this laser medium of thermal overload then can for good and all damage it, or causing laser beam quality and power to worsen widely, this restriction makes the laser system design and makes and faces crucial engineering challenge.
Yet, other pumping design such as pulse pump and quasi c. w. pumping can be used for the laser design, " Gator " ultraviolet electric light (E-O) Q-switched pulse formula DPSS ultraviolet laser such as Lambda Physics ' Model old model uses the E-OQ switch, and it provides higher laser pulse power with low pulse recurrence rate.For each pumping pulse, only produce a ultraviolet laser pulse, this pumping duration is limited to hundreds of microseconds (μ s), so laser output pulse recurrence rate typically is limited to below the 2KHz.This pump design is for boring and not preferred, because it will influence the quantum of output of boring unfriendly.
Existing quasi c. w. pumping is similar in appearance to pulse pump, but has the long pumping duration with lower peak value pump power.According to the repetition rate and the work period of employed diode, this pumping design also can have about 1 to 2KHz pumping repetition rate and the pumping duration can be from hundreds of microseconds to several milliseconds (ms).This pumping design allows than continuous wave pumping pumping to higher level, and this is because as long as pumping is closed, diode is " rests " (and heat load minimizing or stop) just.So during pumping, this laser output power is compared to the laser output power height of suitable continuous wave pumping laser.This laser output is controlled by the electric current that is controlled to diode.Yet the pumping repetition rate of this pumping design still is great shortcoming.The typical case of quasi c. w. pumping uses and comprises the peak power of utilizing long laser pulse width and appropriateness, the bonding and welding such as laser.
Therefore, comprising the pumping design that can facilitate higher-wattage and very fast repetition rate is desired with the laser system that increases the boring quantum of output.
Summary of the invention
Existing ultraviolet laser hole-drilling system utilizes a standard frequency conversion designs so that the laser fundamental wavelength is converted to ultraviolet ray (UV) from infrared ray (IR) district.Such optimum system choosing adopts high ultraviolet power and high pulse repetition rate to obtain the high yield output that through hole forms.Therefore, A-OQ switch DPSS laser system has been preferred for boring so far.
Yet the ultraviolet power that commercial system of longing for will be preferred higher to be being used to reduce drilling time, or finishes acceptable through hole on the material such as copper and FR4 some " being difficult to boring ".So the high ultraviolet output power (5 to 15 watts) under high-repetition-rate (number KHz is to tens of KHz) is preferred.
And for being useful on commerce, for example forming through hole on PCB will need laser system to finish 300 to 400 through holes at per second, and therefore, laser orientation system must move to 300 to 400 repositions p.s..Typically, the laser system cost is less than 1 millisecond (ms) and bores a through hole, but normal cost moves to new position to be used for next through hole than 1 millisecond of longer time in some situations.Therefore, in fact, the time that the time that laser is in unlatching (ON) can be closed (OFF) than being in still less and makes the utilization rate of laser quite low.
The invention provides a kind of quasi c. w. diode/lamp pumping A-OQ switch solid ultraviolet laser, when positioning system when a target district moves to next target district, preface is avoided synchronously or reduced pumping, and when boring, increase the pumping level and surpass continuous wave pumping level.So it is higher to be used for the effective ultraviolet power that through hole forms, be same as existing existing continuous wave pumping with laser diode even keep for the heat load of the average pump power of laser medium and pump diode.This quasi c. w. pumping current waveform can be proofreaied and correct further to realize a preferred ultraviolet pulse amplitude waveform.
This quasi c. w. diode or lamp pumping A-OQ switch solid Ultra-Violet Laser are novel; Quasi c. w. pumping and bundle scan-synchronizedization are novel; And this laser system to be used in that through hole forms also be novel.
From hereinafter the DETAILED DESCRIPTION OF THE PREFERRED of accompanying drawing can cheer and bright extra purpose of the present invention and advantage.
The accompanying drawing simple declaration
Fig. 1 one has the rough schematic view of embodiment of the quasi c. w. diode pumping A-OQ switch laser of three frequency inverted in the chamber;
2 figure A are graphic simplicity explanations of the example waveform of quasi c. w. pump diode electric current; And
Fig. 2 B is the picture specification of the simplification of example A-OQ switch laser pulse overlapping on the accurate pump diode electric current shown in Fig. 2 A.
Preferred embodiment describes in detail
Fig. 1 is the rough schematic view of the preferred embodiment of quasi c. w. pulsed diode pumping A-OQ switch solid related art ultraviolet laser systems 10, and this system 10 has synchronous target-seeking (targeting), pumping and burns (firing) and form through hole with high yield.Consult Fig. 1, show and have diode 14 pumping laser media 16 in the laser resonator 12 of the laser system 10 of its side, yet, it will be understood by those of skill in the art that foldable and this pumping design of resonator 12 can be " terminal pumping " or this laser system 10 and can utilize other feasible to know configuration.Exemplary diode 14 comprises, but is not limited to SDL, Inc.of San Jose, and the model that California sold is 100 watts of quasi c. w. arrays of series and 960 watts of high workload factor storehouse arrays of SDL-3200.Exemplary solid laser medium 16 comprises and has YAG, YLF, and YVO
4The compound of composition.Between IR catoptron 18 and ultraviolet ray (third harmonic) transmittance output coupling apparatus 20, resonator 12 along its optical axis 22 comprise an acousto-optic (A-O) Q-switch 24, a frequency multiplier (doubler) 26, and a usefulness chamber in the triductor (tripler) 28 of frequency inverted.It will be understood by those of skill in the art that frequency inverted can be finished in resonator 12 outsides.
Fig. 2 A and 2B (becoming Fig. 2 altogether) illustrate accurate pump diode current impulse or interval 50a respectively simplifiedly, the example waveform of 50b and 50c (being generically and collectively referred to as current intervals 50) and the example A-OQ switch laser pulse 60a of overlapping on the accurate pump diode current waveform shown in Fig. 2 A, 60b and 60c (general name is called laser pulse 60).Consult Fig. 1 and 2, make the laser system operation synchronously, make that CPU (central processing unit) (CPU) 32 membership control power supply 34 stops diode pumping (changing diode current is zero) or reduces the low current level that diode pumping to is scheduled to when laser system 10 first target district 31 one of on workpiece 30 finishes a through hole.Example power supply unit 34 comprises, but is not limited to model SDL-820, is used to have 10 to 15 amperes of continuous wave laser diode drivers of typical 10 microseconds (μ s) current transitions time; Model SDL-830 is used for about 50 amperes of continuous wave laser drivers; Or model SDL-928, be used for about 150 amperes of peak value quasi-CW laser diode array drivers, all be sold by SDL, Inc.of San Jose, California.
Then, the new target district 31 of positioning system 36 mobile beam outgoing positions to.Preferably, this beam position system 36 comprises a translation stage steady arm, at least two horizontal platforms of this translation stage steady arm utilization and allow fast moving between the target district 31 on the identical or different workpiece 30.In a preferred embodiment, this translation stage steady arm is one fen axle system, and wherein Y platform travelling workpiece 30 and condenser lens that the X platform moves a quick positioner and is associated also can be adjusted in the Z bulk of this X platform and Y interstation.Positioning mirror can turn to alignment optical path 22 by any between laser resonator 12 and quick positioner, and for example this quick positioner can use high precision linear motor and/or a pair of galvanometer mirror and can carry out processing operation single or that repeat according to test that is provided or design data.But such and steady arm Be Controlled and independently move in phase.
In addition, beam position system 36 preferably uses contactless, small displacement sensing device, to determine pitch (pitch) owing to such, shake (yaw) partially, or (roll) the Abbe error that causes of rolling, this error be can't help to go up position indicator such as the axle of distance scale scrambler or laser interferometer and is indicated.The Abbe error correcting system can be calibrated with respect to accurate normative reference, can be according to the absolutely accurate of sensor reading so only proofread and correct according to sensing the little change of sensor reading.This Abbe error correcting system explains in international publication WO 01/52004 A1 number of being announced July 19 calendar year 2001 and the United States Patent (USP) 2001-0029674 that is announced October 18 calendar year 2001 A1 number.The relevant portion that the corresponding U.S. Patent application 09/755950 of Cutler discloses will be incorporated in for reference herein.
Many those skilled in the art of being changed to of positioning system 36 know, and some embodiment of positioning system 36 are described in detail in people's such as Cutler the United States Patent (USP) 5751585, be sold by Electro Scientific Industries, Inc.of Portland, the ESI model 5320 micro through hole hole-drilling systems of Oregon are advantageous applications of positioning system 36, and the laser drill that the copper that has been used in the resin-coating of electronics industry encapsulates, also can use such as by Electro ScientificIndustries, Inc.in Portland, the range of models 27 of Oregon manufacturing * *, 43 * *, 44 * *, or 53 * * other preferred positioning system.Those skilled in the art will be appreciated that optionally to use to have the system of single X-Y platform, carries out the workpiece location by fixed beam position and/or the fixedly galvanometer that is used for beam position, can select among both.Person of skill in the art will appreciate that such system can be programmed in order to the dynamically Ultra-Violet Laser system output pulse 40 of location focusing at a high speed with the tool path file, to produce periodically or acyclic a large amount of useful pattern.
When arriving at, positioning system 36 maybe will arrive at new or second a target district 31, or the preset time interval after a diode pumping suppresses or lowers, CPU 32 can apply the electric current of electric current or increase to diode 14.This CPU 32 can open Q-switch 24 and launch laser pulse 60 with predetermined repetition rate by indication Q-switch controller 38, till finishing second through hole.
Pumping current at interval 50 waveform can give the shape of the peak power waveform of the laser pulse 60 of modulation during with the pumping of control quasi c. w., such as the duration: smooth, from low to high
(shown in Fig. 2 A) or from high to low.In addition, but such current waveform modulation and have different amplitudes makes and for example can use high-peak power to be used in the boring metal level and can to use than low peak power being used to the dielectric layer of holing optionally.Similarly, the adjustable current pumping at interval 50 time remaining be used for larger-diameter through hole with the size of the through hole that is fit to handle, the degree of depth, and material such as long current intervals 50.Fig. 2 A and 2B show, when the work period can keep identical, this laser system 10 allowed, but and nonessential, the electric current pumping is 50 variable cycle and the variable cycle between electric current pumping cycle 50 at interval.Yet, if wish the laser output waveformization similarly to change the work period.
The repetition rate of quasi c. w. pumping can be easy to reach high to 2kHz, need not constant interval time between this quasi c. w. pumping, as long as keep relatively constant or below horizontal in cause thermal damage for the evenly heat load of laser pump diode 14 and/or laser medium 16.
In one embodiment, the diode 14 of 5 watts of Ultra-Violet Laser systems 10 of continuous wave pumping and power supply unit 34 be changed into conducting in the variable current pumping, the laser system 10 that is produced can be at 500KHz with the running of work period of 2 to 1.Stop with can pumping laser medium 16 1 milliseconds at such diode 14 for before another 1 millisecond of the pumping their, so, pumping continue during, the high approximately electric current to twice can enter within the diode 14 (and can influence on diode 14 or the laser medium 16 evenly heat load) sharply.Therefore, the laser power the duration of this 1 millisecond of pumping can surpass twice manyly greater than the laser power (particularly after the non-linear frequency conversion) from suitable continuous wave pumping laser.The A-OQ switch 24 that is used in the laser resonator 12 can be guaranteed to launch laser pulse 60 with for example 10KHz or up to the predetermined repetition rate of 50KHz.
Dielectric medium matrix or layer are the organic dielectric materials that is folded between the conductive layer and for example can contains standard, such as benzocyclobutane (BCB), along dibutene acetamide triazine (BT), card plate, cyanate ester, epoxy, phenolic aldehyde, polyimide, polytetrafluoroethylene (PTFE), all polymer alloies or its constituent.The variation in thickness of existing organic dielectric layer is quite big, but typically than the metal bed thickness many.The typical thickness range of organic dielectric layer is about 30 to 400 microns.
This dielectric layer also can contain and comprise fibrous matter or dispersed particles, for example organic dielectric material of aramid fibre, pottery or glass braiding or dispersion.Existing reinforcement composition typically is other filament or particle, the braiding bundle of size about 1 to 10 micron and/or 10 microns to hundreds of microns.It will be understood by those of skill in the art that, strengthen composition and can powder introduce among organic dielectric medium and can be non-adjacent and heterogeneous.This compound or strengthened layer typically need than the not required higher laser treatment of energy density of dielectric layer of reinforcement of ablating.Those skilled in the art will be appreciated that also such different layer also can be inner non-adjacent, non-homogeneous and non-stratification.Have several layers metal, dielectric medium, and the storehouse of strengthening material comparable 2 millimeters thicker.
Preferably, from 25 to 300 microns of the scopes of through-hole diameter, to have a diameter little of about 5 to 25 microns or greater than 1 millimeter through hole but laser system 10 can produce.Because the preferred ablation point size diameter of laser pulse 60 is about 25 to 75 microns, but handled greater than 25 microns through hole mat trepan method (trepanning), concentric circles facture or spiral facture.It will be understood by those of skill in the art that through hole can be the non-circular shape such as square, rectangle, ellipse, flute profile or other morphology.
The through hole through hole penetrates all layers of workpiece 30 and material nattily and equably and preferably shows the taper that can be ignored, from the top to its bottom.Blind hole does not penetrate all layer and/or materials, stays usually and terminates in the bottom conductive layer place.Suitably select laser parameter can allow bottom conductive layer to remain unaffected, even it contains the material that is same as metal layer at top.
The parameter of selecting laser output 40 to be helping reaching clean and tidy, continuous in fact boring (also being that through hole forms) in metal miscellaneous, dielectric medium and other material target, metal miscellaneous, dielectric medium and other material target can have different optical absorption, ablation threshold or other feature to respond ultraviolet ray or visible light.Preferred laser system is exported 40 parameters and comprised: the average energy of each pulse of measuring in the working surface place is approximately big than 120 little joules (μ J), is preferably more than 200 little joules; Spot size diameter or space main shaft are approximately less than 50 microns, preferably from about 1 to 50 micron; And, be preferably more than 5kHz, and preferably even be higher than 20kHz approximately greater than the repetition rate of 1kHz; Wavelength is preferably between about 190 to 532 nanometers, and more preferably greatly between 250 nanometers and 400 nanometers.Specific optimal wavelength comprises, but is not limited to 1064 nanometers, 532 nanometers, 355 nanometers, 349 nanometers or 266 nanometers.
The selection of the preferred parameter of laser output 40 is to avoid some cause thermal damage effect, and this is shorter than about 150 nanoseconds (ns) by utilization, and preferably from about 40 to 90 nanoseconds or lower transient pulse width.Those skilled in the art will be appreciated that also the spot area of laser pulse 60 is roughly circle, but can be oval a little.Preferred Ultra-Violet Laser drilling parameter is disclosed in United States Patent (USP) 5593606 and 5841099.
Blind hole, and have especially large diameter blind hole preferably mat run through for twice and handle and produce, wherein the conductive layer in all target districts is running through the dielectric layer of removing in the processing and then remove all target districts with the energy density of laser output less than the conductive layer ablation threshold during running through processing for the second time for the first time.After all conductive layers of top of removing the target district, increase repetition rate and mat and be reduced to the electric current of laser pump diode 14 and reduced but the energy density mat that is used for laser output during running through processing for the second time defocuses laser spot and/or mat.
It will be understood by those of skill in the art that, blind hole also can result from running through in the processing of a single, wherein the conduction of each target and dielectric layer were removed before positioning system 36 moves to next target district 31, and the through hole that is preferably used for producing than minor diameter is handled in running through of single.Run through in the processing at a single; when laser pulse 60 begins to remove dielectric layer; keep suitably high energy density; this will be more efficient; but when laser pulse 60 is disposed dielectric layer and exposed bottom conductive layer to the open air; when making it begin to absorb heat from laser output 40, then bottom conductive layer preferably uses lower energy density to be protected.So, when removing dielectric medium, laser facula gradually defocus or pumping current to reduce will very fast, more effective, and than with protecting bottom metal layers better with single energy density removal dielectric medium.Such and other be used for the U.S. Pat 2001-0045419 that the laser output waveform technology of boring method is described in detail in United States Patent (USP) 09/823922 and is announced November 29 calendar year 2001, the detailed description of United States Patent (USP) 09/823922 and graphic be incorporated in for reference herein.
What it will be appreciated by those skilled in the art that is in not deviating under the ultimate principle of the present invention, can make many changes to the details of the invention described above embodiment.Therefore, category of the present invention is defined by the scope of claim.
Claims
(according to the modification of the 19th of treaty)
1. job operation of passing the target of one deck at least material in a plurality of targets district on the workpiece with a laser system, this laser system is utilized a laser pump diode and a solid state laser, this laser pump diode has the pumping capacity of current induced accumulation and has limited this laser pump diode capacity, it can be sent to this solid state laser in the time period that prolongs, this method comprises:
One first target area of addressing one beam positioner on this workpiece;
Supply current to this laser pump diode with one first higher current levels, to be used for this solid state laser of pumping;
Operate acousto-optic Q-switching in the chamber, have first laser output of at least two laser pulse waves of 2kHz repetition rate at least and produce one;
Apply this first laser and export this first target area to, so that remove the target material from this first target area;
The electric current that is fed to this laser pump diode is reduced to a lower levels of current, so that reduce the load on this laser pump diode;
This beam positioner of addressing is second target area that is different from this first target area on this workpiece;
The electric current that is fed to this laser pump diode is increased to one second higher levels of current, to be used for this solid state laser of pumping;
Operate this Q-switch, have second laser output of at least two laser pulses of 2kHz repetition rate at least so that produce one; And
Apply this second laser and export this second target area to, so that remove the target material from this second target area.
2. as the described method of claim l, wherein provide current to this laser pump diode and betided for the first and the 3rd time interval respectively in this first and second higher current levels, wherein provide current to this laser pump diode and betided for one second time interval in this lower current levels, wherein this beam positioner changes to second target area with outgoing position by this first target area during this second time interval, wherein the output power level of this first and second laser output changes as the function that is supplied to the levels of current of laser pump diode, and wherein this laser pump diode has current induced, the pumping capacity of accumulation, its from first to the 3rd time interval of restriction can transfer to the amount of the pump power of solid state laser from laser diode, so that concerning laser diode, equal the continuous wave in first to the 3rd time interval in the time interval one, lower at least one in first and second higher current levels of the first and the 3rd time interval supply of levels of current permission in the supply of second time interval surpasses a maximum continuous wave levels of current, and work as with laser pump diode pumping in maximum continuous wave levels of current, concerning with the solid state laser of given pulse recurrence rate, with at least one output power horizontal exceeding one maximum continuous wave pumping laser output in first and second laser output of given pulse recurrence rate.
3. method as claimed in claim 2, wherein the boring output of this laser system changes as the function of the output power level of laser output, and concerning this laser system, when it operated in the output of maximum continuous wave pumping laser, its boring output surpassed a maximum continuous wave pumping laser boring output.
4. method as claimed in claim 2, wherein this first or second higher current levels is lower than this maximum continuous wave levels of current.
5. method as claimed in claim 2, the wherein equal time quantum of this first and the 3rd time interval representative.
6. method as claimed in claim 5 is wherein supplied the electric current of equivalent in this first and the 3rd time interval.
7. method as claimed in claim 5 is wherein at the different electric currents of measuring of this first and the 3rd time interval supply.
8. method as claimed in claim 2, the wherein different time quantum of this first and the 3rd time interval representative.
9. method as claimed in claim 8 is wherein supplied the electric current of equivalent in this first and the 3rd time interval.
10. method as claimed in claim 8 is wherein at the different electric currents of measuring of this first and the 3rd time interval supply.
11. the method for claim 1, wherein provide current to this laser pump diode and betided for the first and the 3rd time interval respectively with this first and second higher current levels, wherein provide current to this laser pump diode and betided for one second time interval with this lower current levels, wherein this beam positioner changes to second target area with outgoing position by this first target area in this second time interval, and wherein this first and the 3rd time interval is represented the time quantum that equates.
12. method as claimed in claim 11 is wherein supplied the electric current of equivalent in this first and the 3rd time interval.
13. method as claimed in claim 11 is wherein at the different electric currents of measuring of this first and the 3rd time interval supply.
14. the method for claim 1, wherein provide current to this laser pump diode and betided for the first and the 3rd time interval respectively with this first and second higher current levels, wherein provide current to this laser pump diode and betided for one second time interval with this lower current levels, wherein this beam positioner changes to second target area with outgoing position by this first target area during this second time interval, and wherein this first and the 3rd time interval is represented different time quantums.
15. method as claimed in claim 14 is wherein supplied the electric current of equivalent in this first and the 3rd time interval.
16. method as claimed in claim 14 is wherein at the different electric currents of measuring of this first and the 3rd time interval supply.
17. the method for claim 1, wherein this lower current levels does not comprise electric current in fact.
18. the method for claim 1, wherein this lower current levels comprises sufficient electric current, so that produce optics output by this laser pump diode.
19. method as claimed in claim 2, wherein this lower current levels comprises sufficient electric current, so that produce optics output by this laser pump diode.
20. the method for claim 1, wherein provide current to this laser pump diode and betided for the first and the 3rd time interval respectively in this first and second higher current levels, wherein provide current to this laser pump diode and betided for one second time interval with this lower current levels, wherein this beam positioner changes to second target area with outgoing position by this first target area during this second time interval, and this first and the 3rd time interval at each wherein, each all comprises first and second different levels of current values at least this first and second higher current levels.
21. method as claimed in claim 20, wherein this first and second levels of current value puts on during the processing of the monolayer material in this target area.
22. method as claimed in claim 20, wherein this first levels of current value is higher than this second levels of current value, this first levels of current value puts on during the processing of the metal level in this target area, and this second levels of current value puts on during the processing of the dielectric layer in this target area.
23. method as claimed in claim 2, wherein this first and second higher current levels each all comprise first and second different levels of current values at least during this first and the 3rd time interval in each.
24. method as claimed in claim 23, wherein this first and second levels of current value puts on during the processing of the monolayer material in this target area.
25. method as claimed in claim 23, wherein this first levels of current value is than this second levels of current value height, this first levels of current value puts on during the processing of the metal level in this target area, and this second levels of current value puts on during the processing of the dielectric layer in this target area.
26. the method for claim 1, wherein this Q-switch produces laser pulse with the repetition rate greater than 50kHz.
27. method as claimed in claim 2, wherein this Q-switch produces laser pulse with the repetition rate greater than 50kHz.
28. the method for claim 1, wherein this first and second laser output comprises a wavelength that is shorter than about 400nm.
29. method as claimed in claim 2, wherein this first and second laser output comprises a wavelength that is shorter than about 400nm.
30. the method for claim 1, wherein this first and second laser output comprises one by YAG, YLF or YVO
4The harmonic wave of the wavelength that laser instrument is launched, this rahmonic comprises 532nm, 355nm, 349nm or 266nm.
31. method as claimed in claim 2, wherein this first and second laser output comprises one by YAG, YLF or YVO
4The harmonic wave of the wavelength that laser instrument is launched, this rahmonic comprises 532nm, 355nm, 349nm or 266nm.
32. the method for claim 1, wherein provide current to this laser pump diode and betided for the first and the 3rd time interval respectively with this first and second higher current levels, wherein provide current to this laser pump diode and betided for one second time interval with this lower current levels, wherein this beam positioner changes to second target area with outgoing position by this first target area in this second time interval, wherein this beam positioner after the 3rd time interval and a representative be different from and outgoing position changed to one the 3rd by this second target area during the 4th time interval of time quantum in this second time interval and separate target area, and wherein during the 4th time interval this laser pump diode supply one second lower current levels.
33. method as claimed in claim 2, wherein provide current to this laser pump diode and betided for the first and the 3rd time interval respectively with this first and second higher current levels, wherein provide current to this laser pump diode and betided for one second time interval in this lower current levels, wherein this beam positioner changes to second target area with outgoing position by this first target area during this second time interval, wherein this beam positioner Yu Yi representative is different from and outgoing position is changed to one the 3rd by this second target area during the 4th time interval of time quantum in this second time interval and separate target area, and wherein during the 4th time interval this laser pump diode supply one second lower current levels.
34. method as claimed in claim 32, wherein this lower current levels is different with this second lower current levels.
35. method as claimed in claim 32, wherein this lower current levels is different with this second lower current levels.
36. the method for claim 1 wherein runs through the through hole that surpasses a target layer and doubles to pass operation with one and formed.
37. the method for claim 1 wherein runs through the through hole that surpasses a target layer and singlely passes operation and formed with one.
38. a laser system that is used to process the target of one deck at least material of a plurality of discrete target area on the workpiece comprises:
One solid state laser is used for producing first and second laser output at least, along an optical path towards an outgoing position;
One laser pump diode is used for this solid state laser of time interval pumping at least the first and the 3rd non-overlapping;
The power supply of one variable chemical control system, be used for supplying a higher current levels to this laser pump diode, and be used under the repetition rate of 2kHz at least one second time interval between this first and the 3rd time interval and supply a lower current levels in this first and the 3rd time interval;
Acousto-optic Q-switching in one chamber is used for respectively providing at least two laser pulses in each within this first and second laser output in this first and the 3rd time interval;
One beam positioner, the outgoing position that is used for exporting at this this first laser of very first time interval addressing is towards one first target area, and at the outgoing position of this second laser of the 3rd interbody spacer addressing output towards one second target area, and be used for during this second time interval, changing this outgoing position from this first target area to this second target area; And
The control of one interface, be used for coordinating directly or indirectly this beam position system, this power supply, and the action of this Q-switch, so that in the first and the 3rd time interval, when the first and second output generations at interval, this power supply supply higher level electric current is to laser pump diode, and,, supply the reduced levels electric current when outgoing position changes in second time interval.
39. laser system as claimed in claim 38, wherein the power level of this first and second laser output changes as the function that is supplied to the levels of current of laser pump diode, wherein, laser pump diode has current induced, accumulation pumping capacity, it is limited in this first to the 3rd time interval, can transfer to the pump power amount of solid state laser from laser diode, so that concerning laser diode, in a continuous wave time interval that equals this first to the 3rd time interval, electric current at the reduced levels of second time interval supply allows to surpass a maximum continuous wave levels of current in the higher levels of current of the first and the 3rd time interval supply, and concerning the laser medium of given pulse recurrence rate, when its by laser pump diode during with maximum continuous wave levels of current pumping, surpass a maximum continuous wave pumping laser output with the power level of first and second laser output of given pulse recurrence rate.
40. laser system as claimed in claim 39, wherein the boring output of this laser system changes as the function of laser output power level, and concerning this laser system, when it was exported with this maximum continuous wave pumping laser, this boring output surpassed a maximum continuous wave pumping laser boring output.
41. laser system as claimed in claim 38, the wherein equal time quantum of this first and the 3rd time interval representative.
42. laser system as claimed in claim 38, the wherein different time quantum of this first and the 3rd time interval representative.
43. laser system as claimed in claim 38, wherein the higher current levels of supplying in this first and the 3rd time interval is represented the electric current of an equivalent.
44. laser system as claimed in claim 38, wherein the higher current levels of being supplied at interval in this very first time is different from the higher current levels of supplying in the 3rd time interval.
45. laser system as claimed in claim 38, wherein this lower current levels does not comprise electric current in fact.
46. laser system as claimed in claim 38, wherein this this higher current levels of the first and the 3rd time interval has first and second different levels of current value at least at each.
47. laser system as claimed in claim 46, wherein this first and second levels of current value puts on during the processing of the simple layer material in this target area.
48. laser system as claimed in claim 46, wherein this first levels of current value is than this second levels of current value height, this first levels of current value puts on during the processing of the metal level in this target area, and this second levels of current value puts on during the processing of the dielectric layer in this target area.
49. laser system as claimed in claim 39, wherein the boring output of this laser system is as the function of this laser output power level and change, and concerning this laser system, when it operated in this maximum continuous wave pumping laser output, its boring output surpassed maximum continuous wave pulse laser boring output.
50. laser system as claimed in claim 38, wherein this first and second laser output comprises a wavelength that is shorter than about 400nm.
51. laser system as claimed in claim 38, wherein this first and second laser output comprises one by YAG, YLF or YVO
4The harmonic wave of the wavelength that laser is launched, this harmonic wave comprises 532nm, 355nm, 349nm or 266nm.
52. laser system as claimed in claim 38 wherein is different from the 4th time interval of time quantum in this second time interval in a representative, this beam positioner changes this outgoing position from this second target area to the 3rd discrete target area.
53. laser system as claimed in claim 38 wherein runs through through hole above one deck and is with one and singlely passes operation and formed.
54. laser system as claimed in claim 38, wherein running through the through hole that surpasses a target layer is to double to pass operation with one to be formed.
55. laser system as claimed in claim 38, the 4th time interval that wherein is different from the time quantum in this second time interval in a representative, this beam positioner changes this outgoing position and separates target area from this second target area to the 3rd, wherein this first and the 3rd time interval comprises the different time periods, and this higher current levels of being supplied at interval in this very first time is different from this higher current levels of supplying in the 3rd time interval.
56. laser system as claimed in claim 39, wherein, the output of this laser comprises a wavelength, the harmonic wave of the fundamental wavelength that it is launched by this solid state laser; This reduced levels electric current has a nonzero value; And this Q-switch is with greater than producing a laser pulse under the repetition rate of 50kHz.
Claims (60)
1. job operation of passing the target of one deck at least material in multiple target district on the workpiece with a laser system, this laser system is utilized a solid laser medium and a pumping source, solid laser medium is restricted to a certain amount of pump power, so that this solid laser medium can hold fair one prolong because the thermoinducible distortion time cycle, it comprises:
The one first target district of addressing one beam positioner on this workpiece;
Supply current to this laser pumping source with one first higher current levels, to be used for this solid laser medium of pumping in very first time interval;
Operate acousto-optic Q-switching in the chamber, have at least first laser of at least two laser pulses of 2kHz repetition rate and be output in the very first time at interval and produce one;
Apply this first laser and export this first target district to, to remove the target material from this first target district;
Be reduced to a lower current levels, this electric current is supplied to laser pumping source, so that reduce the heat load of solid laser medium in second time interval;
This beam positioner of addressing is second a target district that is different from this first target district on this workpiece;
Increase to one second higher current levels, this electric current be supplied to lasing light emitter with this solid laser medium of pumping in the 3rd time interval;
Operate this Q-switch, have second laser output of at least two laser pulses of 2kHz repetition rate at least so that produce one; And
Apply this second laser and export this second target district to, so that remove the target material from this second target district.
2. the method for claim 1, wherein this laser pumping source comprises a laser pump diode, described first and second laser output, this is first years old, the power level that second output has is to become as the function of the levels of current that is supplied to laser pump diode, and wherein said laser pump diode has current induced, accumulate relevant pumping capacity hot in nature, its restriction pumping quantity of power, this pump power can be transferred to laser medium from laser pump diode in first to the 3rd time interval, so that lower electric current level of supply allows the levels of current of the first and the 3rd time interval supply to surpass the maximum continuous wave levels of current of laser pump diode in second time interval, so that the laser pump diode continuous wave time interval equaled for first to the 3rd time interval, and when laser pump diode during with maximum continuous wave levels of current pumping laser medium, concerning with the laser medium of given pulse recurrence rate, the output power level of first and second laser output surpasses maximum continuous wave pumping laser output power level with given pulse recurrence rate.
3. method as claimed in claim 2, the wherein maximum continuous wave pumping laser of the output power horizontal exceeding output power level of first and second laser output, and first and second laser output are respectively from first and second target districts removal ground floor target material.
4. method as claimed in claim 2, wherein one of this first or second higher current levels can be lower than this maximum continuous wave levels of current.
5. method as claimed in claim 2, wherein laser system has one as the function of laser output power level and the boring output that changes, and for this laser system, when it was operated at the output of maximum continuous wave pumping laser, this boring output surpassed a maximum continuous wave pumping laser laser drill output.
6. the method for claim 1, the time quantum that equates in this first and the 3rd time interval representative wherein, and wherein in the first and the 3rd time interval, be supplied the electric current of equivalent.
7. the method for claim 1 is wherein represented the different times of measuring in this first and the 3rd time interval.
8. the method for claim 1 is wherein supplied first magnitude of current at interval in the very first time, and is supplied the 3rd magnitude of current in the 3rd time interval, and first is different with the 3rd magnitude of current.
9. the method for claim 1, wherein lower levels of current does not have electric current substantially.
10. the method for claim 1 is wherein modulated to comprise that at least the first and second different levels of current values are in the first and the 3rd time interval in this first and/or second higher current levels.
11. method as claimed in claim 10, wherein this first levels of current value is than the second levels of current value height, and the first levels of current value is employed during metal level in handling target area, and during dielectric layer, the second levels of current value is employed in handling target area.
12. the method for claim 1, wherein the power level that has of this first and second laser output becomes as the function of the levels of current that is supplied to laser pump diode, and wherein laser medium shows thermal induction accumulation distortion, its restriction can be applied to the pump power amount of laser medium in first to the 3rd time interval, so that concerning laser medium, a continuous wave time interval that equaled for first to the 3rd time interval, one low-level pump power be provided to laser medium in the first and the 3rd time interval to surpass a maximum continuous wave pump power, and concerning laser medium, when with maximum continuous wave pump power pumping, so that the one maximum continuous wave pumping laser output of the first and second laser output power horizontal exceedings.
13. method as claimed in claim 12, the boring output of wherein said laser system changes as the function of laser output power level, and concerning this laser system, when with maximum continuous wave pumping laser output function, boring output surpasses maximum continuous wave pumping laser boring output.
14. the method for claim 1, wherein said Q-switch produces laser pulse with the repetition rate greater than 2kHz.
15. the method for claim 1, wherein said first and second laser output comprises that one approximately is shorter than the wavelength of 400nm.
16. the method for claim 1, the output of wherein said first and second laser comprises the wavelength of a YAG or YLF Lasers emission, or comprises 1064nm, 532nm, 355nm, or a harmonic wave of the such wavelength (but being not limited to these) of 266nm.
17. the method for claim 1, wherein beam positioner changes outgoing position to the 3rd discrete target area in one the 4th time interval from second target area, and it represents different time quantum of second time interval.
18. the method for claim 1, wherein the through hole in the individual layer be formed at one single by the operation.
19. the method for claim 1 is wherein formed by the operation of passing through that doubles by the through hole more than a target layer.
20. the method for claim 1 is wherein formed by operation by single by the through hole more than a target layer.
21. a laser system that is used to process at least one target material layer of a plurality of discrete target area on the workpiece, it comprises:
One solid laser medium, it is positioned at a laser resonator to produce at least along the first and second laser output of an optical path towards an outgoing position;
One laser pump diode, its described solid laser medium of pumping to the time interval that is less than the first and the 3rd non-overlapping;
One controllable power changeably, its supply a higher current levels to laser pump diode in the first and the 3rd time interval, and supply second time interval of a reduced levels vagabond current between the first and the 3rd time interval;
In one chamber, acousto-optic Q-switching, it provides in first and second laser output of two laser pulses in the first and the 3rd time interval at least;
One beam positioner, its addressing towards the outgoing position of first laser of one first target area output in the very first time at interval, and addressing towards the outgoing position of second laser of second target area output in the 3rd time interval, and in order to change outgoing position to the second target area in second time interval from first target area; And
The control of one interface, it is used for coordinating directly or indirectly the activity of beam position system, power supply and Q-switch, when producing with the output of convenient first and second laser electric current of power supply supply higher level to laser pump diode in the first and the 3rd time interval, and when outgoing position changes, the supply reduced levels electric current to laser pump diode in the 3rd time interval.
22. laser system as claimed in claim 21, wherein the output of this first and second laser has the power level that changes as the function of the levels of current that is supplied to laser pump diode, and wherein laser pump diode has the accumulation relevant pumping capacity hot in nature of current induced, its restriction pumping quantity of power, it can transfer in first to the 3rd time interval of laser medium from laser diode, so that concerning laser diode, when the continuous wave time interval equaled for first to the 3rd time interval, the lower current levels that is supplied in second time interval allows the higher levels of current of the first and the 3rd time interval supply to surpass a maximum continuous wave levels of current, and concerning with the laser medium of given pulse recurrence rate, when by laser pump diode during, surpass the output of continuous wave pumping laser with the power level of first and second laser output of given pulse recurrence rate with maximum continuous wave levels of current pumping.
23. laser system as claimed in claim 22, the boring output of wherein said laser system changes as the function of the power level of laser output, and when operating in the output of maximum continuous wave pumping laser, this laser system boring output surpasses the boring output of a maximum continuous wave pumping laser.
24. laser system as claimed in claim 21, the time quantum that the representative of the wherein said first and the 3rd time interval equates.
25. laser system as claimed in claim 21, the wherein said first and the 3rd time interval was represented the different time amount.
26. laser system as claimed in claim 21, the wherein magnitude of current that equates in the electric current representative of the higher level of the first and the 3rd time interval supply.
27. laser system as claimed in claim 21, wherein the electric current of the higher level of supplying at interval in the very first time is different with the levels of current of the 3rd time interval supply.
28. laser system as claimed in claim 21, wherein the electric current of reduced levels comprises being zero electric current substantially.
29. laser system as claimed in claim 21, wherein the electric current of higher level has the current value of at least the first and second varying levels in the first and the 3rd time interval.
30. laser system as claimed in claim 29 wherein during monolayer material, applies the current value of first and second levels in handling target area.
31. laser system as claimed in claim 29, wherein the first levels of current value is than the second levels of current value height, applies the first levels of current value during metal level in handling target area, applies the second levels of current value when handling the target area inner-dielectric-ayer.
32. laser system as claimed in claim 21, wherein first and second laser output has the power that changes as the function of the levels of current that is applied to laser pump diode, wherein this laser medium shows thermoinducible accumulated deformation, the amount of the pump power that its limit laser medium can be allowed in first to the 3rd time interval, so that concerning laser medium, when the continuous wave time interval equaled for first to the 3rd time interval, the reduced levels that is supplied to the pump power of laser medium in second time interval allows one to be supplied to the higher pump power horizontal exceeding continuous wave pump power of laser medium in the first and the 3rd time interval, and concerning laser medium, when with maximum continuous wave power pumping, the power level of first and second laser output surpasses a maximum continuous wave pumping laser output.
33. laser system as claimed in claim 32, wherein the boring output of this laser system is as the function of laser output power level and change, and concerning this laser system, when operating in the output of maximum continuous wave pumping laser, boring output surpasses maximum continuous wave pumping laser boring output.
34. laser system as claimed in claim 21, wherein Q-switch produces laser pulse with the repetition rate greater than 2kHz.
35. laser system as claimed in claim 21, wherein the output of first and second laser comprises that one approximately is shorter than the wavelength of 400nm.
36. laser system as claimed in claim 21, wherein this first and second laser output comprises the wavelength of a YAG or YLF emission, or includes but is not limited to 1064nm, 532nm, the harmonic wave of one of 355nm or these wavelength of 266nm.
37. laser system as claimed in claim 21, wherein beam positioner changes outgoing position to the 3rd discrete target area in one the 4th time interval from second target area, and its expression one is different from the time quantum in second time interval.
38. laser system as claimed in claim 21 wherein is formed at single by operation by the through hole more than one deck.
39. laser system as claimed in claim 21 wherein is formed at the operation of passing through that doubles by the through hole more than one deck.
40. laser system as claimed in claim 21, wherein beam positioner changes outgoing position to the 3rd discrete target area in one the 4th time interval from second target area, it can represent the time with different amounts of second time interval, wherein the first and the 3rd time interval gram comprises different time sections, and the very first time at interval in the higher levels of current of supply can be different with the higher levels of current of supplying in the 3rd time interval.
41. process the method for one deck target material at least with a plurality of target area of laser system on a workpiece for one kind, this laser system adopts a laser pump diode and a solid state laser, laser pump diode has the relevant pumping capacity of heat history of current induced, it was limited in the time period that prolongs, laser diode can transfer to the pump power amount of solid laser medium, comprising:
The beam positioner of addressing one first target area on workpiece;
With one first higher current levels supply of current to laser pump diode with this solid laser medium of pumping;
Operate in the chamber acousto-optic Q-switching to produce the output of one first laser, it has at least two laser pulses when the repetition rate of 2kHz;
Apply first laser and export first target area to remove the target material from first target area;
Minimizing is supplied to electric current to a lower current levels of laser pump diode to reduce the heat load of laser pump diode;
Addressing is towards the beam positioner of one second target area, and this target area is different from first target area on the workpiece;
Have additional supply of electric current to one second higher current levels to laser pump diode with this solid laser medium of pumping;
The operation Q-switch is to produce the output of one second laser, and it has at least two laser pulses when the repetition rate of 2kHz; And
Apply second laser and export second target area to remove the target material from this second target area.
42. method as claimed in claim 41, wherein swash at interval electric current supply of current with first and second higher levels to laser pump diode in the first and the 3rd time respectively, wherein occurring in for one second time interval with lower current levels supply of current to laser pump diode, and wherein the power level that has of this first and second laser output changes as the function of the levels of current that is supplied to laser pump diode, and wherein this laser pump diode has the relevant pumping capacity of heat history of current induced, its from first to the 3rd time interval of restriction can be transferred to the pump power amount of laser medium from laser diode, so that concerning laser diode, equal in this first to the 3rd time interval one, the lower levels of current of the continuous wave time interval in the supply of second time interval allows to surpass a maximum continuous wave levels of current in this first and second higher levels of current of the first and the 3rd time interval supply, and so that concerning with the laser medium of given pulse recurrence rate, when its by laser pump diode during with maximum continuous wave levels of current pumping, first and second at interval the laser output power levels surpass a maximum continuous wave pumping laser output with given repetition rate.
43. method as claimed in claim 42, wherein the boring output of laser system is as the function of the output power level of output at interval, and when this laser system with maximum continuous wave pumping at interval during output function, its boring output surpasses a maximum continuous wave pumping laser boring output.
44. method as claimed in claim 41, wherein occurred in for the first and the 3rd time interval respectively in the first and second higher current levels supply of current to laser pump diode, wherein, occurred in for one second time interval in lower current levels supply of current to laser pump diode, and wherein the first and the 3rd time interval was represented the time quantum that equates.
45. method as claimed in claim 41, wherein occurred in for the first and the 3rd time interval respectively in the first and second higher current levels supply of current to laser pump diode, wherein, occurred in for one second time interval in lower current levels supply of current to laser pump diode, and first time quantum different with the 3rd time interval representative wherein.
46. method as claimed in claim 41, wherein occurred in for the first and the 3rd time interval respectively in the first and second higher current levels supply of current to laser pump diode, wherein, occurred in for one second time interval in lower current levels supply of current to laser pump diode, and wherein supply the electric current of equal quantities in the first and the 3rd time interval.
47. method as claimed in claim 41, wherein occurred in for the first and the 3rd time interval respectively in the first and second higher current levels supply of current to laser pump diode, wherein, occurred in for one second time interval in lower current levels supply of current to laser pump diode, and wherein supply the electric current of inequality in the first and the 3rd time interval.
48. method as claimed in claim 41, wherein lower levels of current does not have electric current substantially.
49. method as claimed in claim 41, wherein supply of current occurred in for the first and the 3rd time interval respectively to laser pump diode in first and second higher current levels, wherein supply of current occurred in for one second time interval to laser pump diode in lower current levels, and wherein in each the first and the 3rd time interval, first and second higher current levels comprise at least the first and second different levels of current values.
50. method as claimed in claim 49, wherein the first and second levels of current values are employed when handling the monolayer material of target area.
51. method as claimed in claim 49, wherein the first levels of current value is than the second levels of current value height, and during metal level in handling target area, this first levels of current value is employed, and during the dielectric layer in handling target area, this second levels of current value is employed.
52. method as claimed in claim 41, wherein occurred in for the first and the 3rd time interval respectively with the first and second higher current levels supply of current to laser pump diode, wherein occurred in for second time interval with lower levels of current supply of current to laser pump diode, wherein, the output power level of this first and second laser output changes as the function that is supplied to the levels of current of laser pump diode, and wherein laser medium was out of shape owing to thermal induction and can allows limited amount pump power in first to the 3rd time interval, so that for laser medium, at the continuous wave that equaled for first to the 3rd time interval in the time interval, one pump power that is supplied to the reduced levels of laser medium in second time interval allows a pump power that is supplied to the laser medium higher level in the first and the 3rd time interval to surpass a maximum continuous wave pump power, and concerning laser medium, when its during by maximum continuous wave pump power pumping, the output power horizontal exceeding one maximum continuous wave pumping laser output of first and second laser output.
53. method as claimed in claim 52, wherein the boring output of this laser system changes as the function of the output power level of laser output, and concerning this laser system, when it was operated at the output of maximum continuous wave pumping laser, boring output surpassed a maximum continuous wave pumping laser boring output.
54. method as claimed in claim 41, wherein this Q-switch produces laser pulse with a repetition rate greater than 2kHz.
55. method as claimed in claim 41, wherein this first and second laser output comprises that one approximately is shorter than the wavelength of 400nm.
One of 56. method as claimed in claim 41, wherein this first and second laser output comprises the wavelength of a YAG or the emission of YLF Lasers device, or comprises 1064nm, 532nm, and 355nm, or the harmonic wave of 266nm (but being not limited to these) wavelength.
57. method as claimed in claim 41, wherein occurred in for the first and the 3rd time interval respectively with the first and second higher current levels supply of current to laser pump diode, wherein, occurred in for one second time interval with lower levels of current supply of current to laser pump diode, and in one the 4th time interval, beam positioner changes its outgoing position to one the 3rd discrete target area from second target area, and the 4th time interval represented that one was not equal to the time quantum in second time interval.
58. method as claimed in claim 41, wherein the through hole in the individual layer is formed at single by operation.
59. method as claimed in claim 41 wherein is formed at the operation of passing through that doubles by the through hole that surpasses a target layer.
60. the method for claim 1 wherein is formed at single by operation by the through hole that surpasses a target layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27524601P | 2001-03-12 | 2001-03-12 | |
| US60/275,246 | 2001-03-12 |
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| CN1714318A true CN1714318A (en) | 2005-12-28 |
| CN100351719C CN100351719C (en) | 2007-11-28 |
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| CNB028064038A Expired - Fee Related CN100351719C (en) | 2001-03-12 | 2002-03-12 | Quasi-CW diode-pumped, solid-state UV laser system and method employing same |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JP4583711B2 (en) |
| KR (1) | KR100853254B1 (en) |
| CN (1) | CN100351719C (en) |
| CA (1) | CA2440694A1 (en) |
| DE (1) | DE10296512T5 (en) |
| GB (1) | GB2390994B (en) |
| TW (1) | TW523435B (en) |
| WO (1) | WO2002073322A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105103391A (en) * | 2013-02-27 | 2015-11-25 | 诺华股份有限公司 | Laser apparatus and method for laser processing a target material |
| CN111478173A (en) * | 2020-05-19 | 2020-07-31 | 中国科学院福建物质结构研究所 | Passive Q-switched laser with 1.5 microns |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100985018B1 (en) * | 2010-04-06 | 2010-10-04 | 주식회사 엘앤피아너스 | Apparatus for processing a substrate |
| JP6392789B2 (en) * | 2013-02-28 | 2018-09-19 | アイピージー フォトニクス コーポレーション | Laser system for processing sapphire and method using the same |
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| FR2547519B1 (en) * | 1983-06-15 | 1987-07-03 | Snecma | LASER DRILLING METHOD AND DEVICE |
| US5477043A (en) | 1989-10-30 | 1995-12-19 | Symbol Technologies, Inc. | Scanning arrangement for the implementation of scanning patterns over indicia by driving the scanning elements in different component directions |
| EP0460338B1 (en) * | 1990-06-05 | 1994-07-27 | R. Audemars Sa | Procedure of and device for cutting of material |
| JPH0529693A (en) * | 1990-09-19 | 1993-02-05 | Hitachi Ltd | Multipulse laser generator, method therefor and processing method using multipulse laser |
| US5293025A (en) * | 1991-08-01 | 1994-03-08 | E. I. Du Pont De Nemours And Company | Method for forming vias in multilayer circuits |
| JP3315556B2 (en) * | 1994-04-27 | 2002-08-19 | 三菱電機株式会社 | Laser processing equipment |
| US5593606A (en) * | 1994-07-18 | 1997-01-14 | Electro Scientific Industries, Inc. | Ultraviolet laser system and method for forming vias in multi-layered targets |
| US5841099A (en) * | 1994-07-18 | 1998-11-24 | Electro Scientific Industries, Inc. | Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets |
| US5751585A (en) * | 1995-03-20 | 1998-05-12 | Electro Scientific Industries, Inc. | High speed, high accuracy multi-stage tool positioning system |
| JPH09163984A (en) * | 1995-10-12 | 1997-06-24 | Sony Corp | Laser apparatus for gene recombination and recombination of gene using the same |
| US5822211A (en) * | 1996-11-13 | 1998-10-13 | International Business Machines Corporation | Laser texturing apparatus with dual laser paths having an independently adjusted parameter |
| US5943351A (en) * | 1997-05-16 | 1999-08-24 | Excel/Quantronix, Inc. | Intra-cavity and inter-cavity harmonics generation in high-power lasers |
| JP4500374B2 (en) * | 1997-05-27 | 2010-07-14 | ジェイディーエス ユニフエイズ コーポレーション | Laser marking system and energy control method |
| US6188704B1 (en) * | 1998-01-26 | 2001-02-13 | Rocky Mountain Instrument Co. | Diode-pumped laser drive |
| JPH11267867A (en) * | 1998-03-23 | 1999-10-05 | Seiko Epson Corp | Method and device for laser processing |
| US6197133B1 (en) * | 1999-02-16 | 2001-03-06 | General Electric Company | Short-pulse high-peak laser shock peening |
| JP2000301372A (en) * | 1999-04-23 | 2000-10-31 | Seiko Epson Corp | Laser beam machining method for transparent material |
| US6252195B1 (en) * | 1999-04-26 | 2001-06-26 | Ethicon, Inc. | Method of forming blind holes in surgical needles using a diode pumped Nd-YAG laser |
-
2002
- 2002-03-12 DE DE10296512T patent/DE10296512T5/en not_active Ceased
- 2002-03-12 JP JP2002572515A patent/JP4583711B2/en not_active Expired - Fee Related
- 2002-03-12 KR KR1020037011920A patent/KR100853254B1/en not_active IP Right Cessation
- 2002-03-12 CA CA002440694A patent/CA2440694A1/en not_active Abandoned
- 2002-03-12 CN CNB028064038A patent/CN100351719C/en not_active Expired - Fee Related
- 2002-03-12 WO PCT/US2002/007486 patent/WO2002073322A1/en active Application Filing
- 2002-03-12 TW TW091104537A patent/TW523435B/en not_active IP Right Cessation
- 2002-03-12 GB GB0323441A patent/GB2390994B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105103391A (en) * | 2013-02-27 | 2015-11-25 | 诺华股份有限公司 | Laser apparatus and method for laser processing a target material |
| CN111478173A (en) * | 2020-05-19 | 2020-07-31 | 中国科学院福建物质结构研究所 | Passive Q-switched laser with 1.5 microns |
| CN111478173B (en) * | 2020-05-19 | 2021-03-05 | 中国科学院福建物质结构研究所 | Passive Q-switched laser with 1.5 microns |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0323441D0 (en) | 2003-11-05 |
| KR20030087017A (en) | 2003-11-12 |
| GB2390994A (en) | 2004-01-28 |
| JP2004528984A (en) | 2004-09-24 |
| CN100351719C (en) | 2007-11-28 |
| GB2390994B (en) | 2004-10-13 |
| DE10296512T5 (en) | 2004-04-29 |
| WO2002073322A1 (en) | 2002-09-19 |
| JP4583711B2 (en) | 2010-11-17 |
| KR100853254B1 (en) | 2008-08-21 |
| WO2002073322B1 (en) | 2003-02-20 |
| CA2440694A1 (en) | 2002-09-19 |
| TW523435B (en) | 2003-03-11 |
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