CN1711495A - Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same - Google Patents

Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same Download PDF

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Publication number
CN1711495A
CN1711495A CNA2003801029967A CN200380102996A CN1711495A CN 1711495 A CN1711495 A CN 1711495A CN A2003801029967 A CNA2003801029967 A CN A2003801029967A CN 200380102996 A CN200380102996 A CN 200380102996A CN 1711495 A CN1711495 A CN 1711495A
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China
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electrode
gap
substrate
insulation course
district
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CN100465718C (en
Inventor
张龙圭
尹荣男
金宰贤
金尚佑
李宰瑛
车圣恩
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133371—Cells with varying thickness of the liquid crystal layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

A liquid crystal display includes a first substrate having a thin film transistor and a first electrode formed thereon. The first electrode is electrically connected to the thin film transistor. A first insulating layer is formed on the first substrate and a window is formed in the first insulating layer, the window exposing a predetermined region of the first electrode. A second electrode is provided on the first insulating layer and electrically connected to the first electrode. A second substrate includes a third electrode formed thereon. A first gap is formed between the third electrode and the predetermined region of the first electrode, and a second gap is formed between the third and second electrodes. A liquid crystal layer is interposed between the first and second gaps. Other embodiments are included as well as methods for forming the liquid crystal display of the present invention.

Description

Liquid crystal indicator and the method for making this device with thin film transistor base plate of multiple-unit interstitial structure
Technical field
The present invention relates to liquid crystal indicator and relate more specifically to have the multiple-unit interstitial structure thin film transistor base plate liquid crystal indicator and make the method for this device.
Background technology
LCD is as the removable electronic product of notebook computer and the display of the general type seen in some desktop computer display multiple.LCD is in light weight, consumes energy low and can export to have high-resolution image.
LCD generally is made up of a pair of panel (panel) that comprises electrode and polarizer or substrate and the liquid crystal layer that is provided with between panel.Between the electrode on the relative panel liquid crystal layer is set, described electrode applies voltage across liquid crystal layer.The difference of the voltage that applies changes the molecular orientation of liquid crystal layer, causes the different image that shows.The gaps between electrodes of being filled by liquid crystal layer is called as cell gap.
Liquid crystal indicator is divided into transmission-type and reflection-type, and this classification foundation light source is inside or outside for liquid crystal indicator.Transmissive liquid crystal display device uses from the inner light display image that produces of liquid crystal indicator.On the contrary, reflection-type liquid-crystal display device uses from the outside light display image that produces of liquid crystal indicator.
Also known a kind of liquid crystal indicator that uses the 3rd type of inside and outside light source.This liquid-crystal apparatus is called reflection and transmission type LCD suitably.
Fig. 1 is the sectional view that shows traditional reflection and transmission type LCD 50.Please refer to Fig. 1, reflection and transmission type LCD 50 comprises thin film transistor base plate 10, colored filter (colorfilter) substrate 20 and the liquid crystal layer 30 that is provided with between thin film transistor base plate 10 and colored filter substrate 20.
Thin film transistor base plate 10 comprises first substrate 11, thin film transistor (TFT) 12, insulation course 13 and pixel electrode 16.Thin film transistor (TFT) 12 comprises gate electrode 12a, gate insulator 12b, semiconductor layer 12c, source electrode 12d and drain electrode 12e.On first substrate 11, form insulation course 13 and cover film transistor 12.Insulation course 13 provides the contact hole 13a that is used to expose drain electrode 12e.
On insulation course 13, form pixel electrode 16 and be electrically connected on drain electrode 12e by contact hole 13a.Pixel electrode 16 comprises transmission electrode 14 and reflecting electrode 15.On transmission electrode 14, form reflecting electrode 15 and define the echo area R that is used to reflect exterior light R1.In order to define the transmission area T that is used for transmission interior lights R2, the predetermined portions of removing reflecting electrode 15 is to expose transmission electrode 14.
Colored filter substrate 20 comprises second substrate 21, forms and comprise the color filter layers 22 of red, green and blue (R, G and B) colour element on second substrate 21.On color filter layers 22, form common electrode 23 and corresponding to the pixel electrode 16 of thin film transistor base plate 10.
Underclad portion at thin film transistor base plate 10 provides first retardation plate 41 (promptly, produce polarized light for example complete, half or the optical element of quarter-wave phase transformation) and first polarization plates 45, and second retardation plate 42 and second polarization plates 46 are positioned at the top section of colored filter substrate 20.
Traditional reflection and transmission type LCD 50 is by echo area R reflection exterior light R1 with by transmission area T transmission interior lights R2, display image thus.
But traditional reflection and transmission type LCD 50 has a shortcoming, and promptly its design is based on the characteristic of reflection LCD and light transmission echo area R.Known reflection and transmission type LCD is not considered the different characteristic of light transmission transmission area T and for the demand of the different structure of the use of optimizing this light.In known reflection and transmission type device, to compare with transmissive liquid crystal display device, the transmissivity of transmission area T has reduced half.Only make do not have possibility 100% land productivity to be used in polarized light among the transmission area T based on the optical condition of the known reflection and transmission type LCD of echo area R design.
Therefore, have a kind of design requirement of reflection and transmission type LCD, this display device has been considered the characteristic of the light that reflection and transmission area pass through and has been maximized the use of light in transmission area.
Summary of the invention
Comprise having thereon the thin film transistor (TFT) that forms and first substrate of first electrode according to LCD of the present invention.First electrode is electrically connected on thin film transistor (TFT).Form first insulation course on first substrate that comprises the thin film transistor (TFT) and first electrode, and form window in first insulation course, this window exposes the presumptive area of first electrode.On first insulation course, provide second electrode and second electrode to be electrically connected on first electrode.Second substrate comprises the third electrode that forms thereon.Surface in the presumptive area of the surface of third electrode and first electrode forms first gap, and forms second gap between the surface of the surface of third electrode and second electrode.Between first gap and second gap, insert liquid crystal layer.
In optional embodiment, first electrode can be that transmission electrode and window can define and be used for the optical transmission district of transmission from the internal light source of this device.Second electrode can be that the reflection of light district that is used to reflect from the light source of the outside of this device can be defined in reflecting electrode and the zone that comprises reflecting electrode.First gap can be bigger than second gap.For example, first gap can be about two double-lengths in second gap.First insulation course can be organism and the third rare resin that comprises sensitization.The scope of the thickness of first insulation course can be from about 0.5 μ m to about 2.5 μ m.First electrode and third electrode can comprise transparent conductive material, as indium tin oxide or indium-zinc oxide.Second electrode can comprise the metal with high reflectance.Liquid crystal indicator of the present invention can also comprise the gate driver circuit district with gate driver circuit part, and first insulation course can extend into the gate driver circuit district on the gate driver circuit part.Second insulation course can be formed on first substrate, extends into the gate driver circuit district and can comprise a contact hole.First electrode can be electrically connected on thin film transistor (TFT) by contact hole.Liquid-crystal apparatus of the present invention can also be included in chromatic filter layer and the thickness adjusted member that forms on second substrate, wherein on the thickness adjusted member chromatic filter layer is set.Can remove the predetermined portions corresponding to the thickness adjusted member of window, be not corresponding to about twice of the thickness in second district of the chromatic filter layer of window corresponding to the thickness in first district of the chromatic filter layer of window thus.Liquid crystal indicator of the present invention can comprise the chromatic filter layer that does not have the thickness adjusted member, wherein corresponding to the thickness in first district of the chromatic filter layer of window greater than (for example twice) not corresponding to the thickness in second district of the chromatic filter layer of window.Liquid crystal layer can be arranged equably and be about 0 ° liquid crystal inclination angle with formation.
Comprise according to another LCD of the present invention: thin film transistor (TFT) that forms on first substrate and insulation course, and first electrode that forms on insulation course, wherein first electrode is electrically connected on thin film transistor (TFT).Second electrode is provided on first electrode, and the predetermined portions of wherein removing second electrode is used to expose the predetermined portions of first electrode.On second substrate, form third electrode.Between the surface of the surface of third electrode and the predetermined portions of first electrode, form first gap, and between the surface of the surface of third electrode and second electrode, form second gap.Between first gap and second gap, insert liquid crystal layer.
In optional embodiment, first electrode can be that the zone of transmission electrode and the predetermined portions that comprises first electrode can be defined and is used for the optical transmission district of transmission from the internal light source of this device.Second electrode can be that the reflection of light district that is used to reflect from the light source of the outside of this device can be defined in reflecting electrode and the zone that comprises reflecting electrode.First gap can be bigger than second gap.For example, first gap can be about two double-lengths in second gap.First gap can be less than 1.7 μ m less than the about 3.3 μ m and second gap.Insulation course can be organism and the third rare resin that comprises sensitization.First electrode and third electrode can comprise transparent conductive material, as indium tin oxide or indium-zinc oxide.Second electrode can comprise the metal with high reflectance.Liquid-crystal apparatus of the present invention can also be included in the contact hole that forms in the insulation course, and wherein first electrode is electrically connected on thin film transistor (TFT) by contact hole.Between the surface of third electrode and the surface of second electrode, form third space in the zone that occupies by contact hole.Third space comprises liquid crystal layer, and the relation between the size of first, second and third space is defined by following: second gap＜third space≤first gap.Liquid crystal layer can be arranged equably and be about 0 ° liquid crystal inclination angle with formation.
According to the present invention, the step that the method for formation liquid crystal indicator comprises is: form thin film transistor (TFT) on first substrate; Be patterned at first conductive layer that forms on first substrate to be formed on first electrode on first substrate, wherein first electrode is electrically connected on thin film transistor (TFT); On first substrate that comprises the thin film transistor (TFT) and first electrode, first insulation course is set; By in first insulation course, forming the presumptive area that window exposes first electrode; Be patterned at the metal level that forms on first insulation course to form second electrode on first insulation course, wherein second electrode is electrically connected on first electrode; Composition second conductive layer is to form third electrode on second substrate; Locate first substrate and second substrate between the surface of the surface of third electrode and the presumptive area of first electrode, forming first gap, and between the surface of the surface of third electrode and second electrode, form second gap; And between first gap and second gap, insert liquid crystal layer.
In optional method, first electrode can be that transmission electrode and window can define and be used for the optical transmission district of transmission from the internal light source of this device.Second electrode can be that the reflection of light district that is used to reflect from the light source of the outside of this device can be defined in reflecting electrode and the zone that comprises reflecting electrode.First gap can be bigger than second gap.For example, first gap can be about two double-lengths in second gap.First insulation course can be organism and the third rare resin that comprises sensitization.The scope of the thickness of first insulation course can be from about 0.5 μ m to about 2.5 μ m.One of first conductive layer and second conductive layer can be transparent, and comprise one of indium tin oxide or indium-zinc oxide at least.Metal level can have high reflectance.This method also can comprise to be provided gate driver circuit district with gate driver circuit part and first insulation course is extended into gate driver circuit district on the gate driver circuit part.This method also can comprise and second insulation course is set on first substrate, and extends second insulation course and enter the gate driver circuit district.Second insulation course can comprise that the contact hole and first electrode can be electrically connected on thin film transistor (TFT) by contact hole.This method can also be included in and form the thickness adjusted member on second substrate, and on the thickness adjusted member chromatic filter layer is set.Can remove the predetermined portions corresponding to the thickness adjusted member of window, be not corresponding to about twice of the thickness in second district of the chromatic filter layer of window corresponding to the thickness in first district of the chromatic filter layer of window thus.This method can also be included on second substrate and to form the chromatic filter layer that does not have the thickness adjusted member, wherein corresponding to the thickness in first district of the chromatic filter layer of window greater than (for example twice) not corresponding to the thickness in second district of the chromatic filter layer of window.Liquid crystal layer can be arranged equably and be about 0 ° liquid crystal inclination angle with formation.
The other method that is used to form liquid crystal indicator comprises: form thin film transistor (TFT) on first substrate; Insulation course is set comprising on first substrate of thin film transistor (TFT); Composition first conductive layer is to form first electrode on insulation course, wherein first electrode is electrically connected on thin film transistor (TFT); Be patterned at the metal level that forms on first electrode to form second electrode, the predetermined portions of wherein removing second electrode is used to expose the predetermined portions of first electrode; Composition second conductive layer is to form third electrode on second substrate; Locate first substrate and second substrate between the surface of the surface of third electrode and the predetermined portions of first electrode, forming first gap, and between the surface of the surface of third electrode and second electrode, form second gap; And between first gap and second gap, insert liquid crystal layer.
In other method, first electrode can be that the zone of transmission electrode and the predetermined portions that comprises first electrode can be defined and is used for the optical transmission district of transmission from the internal light source of this device.Second electrode can be that the reflection of light district that is used to reflect from the light source of the outside of this device can be defined in reflecting electrode and the zone that comprises reflecting electrode.First gap can be bigger than second gap.For example, first gap can be about two double-lengths in second gap.
Description of drawings
Can understand the preferred embodiments of the present invention in more detail from following description in conjunction with the accompanying drawings, in the accompanying drawing:
Fig. 1 is the sectional view that shows traditional reflection and transmission type LCD;
Fig. 2 is the sectional view that shows the reflection and transmission type LCD of the first embodiment of the present invention;
Fig. 3 is the planimetric map of thin film transistor base plate shown in Figure 2;
Fig. 4 A to 4D is used to illustrate the sectional view that is manufactured on thin film transistor base plate shown in Figure 2;
Fig. 5 is the sectional view that shows the reflection and transmission type LCD of the second embodiment of the present invention;
Fig. 6 is the block scheme that shows gate driver circuit part shown in Figure 5;
Fig. 7 is the synoptic diagram that shows the primary structure of gate driver circuit part shown in Figure 6;
Fig. 8 is the sectional view that shows the reflection and transmission type LCD of the third embodiment of the present invention;
Fig. 9 A to 9D is used to illustrate the sectional view that is manufactured on thin film transistor base plate shown in Figure 8;
Figure 10 is the sectional view that shows the reflection and transmission type LCD of the fourth embodiment of the present invention;
Figure 11 A is the sectional view that shows the reflection and transmission type LCD of the fifth embodiment of the present invention;
Figure 11 B is the sectional view that shows the reflection and transmission type LCD of the sixth embodiment of the present invention;
Figure 12 is the sectional view that shows the reflection and transmission type LCD of the seventh embodiment of the present invention;
Figure 13 is the curve map of demonstration according to the transmissivity of the reflection and transmission type LCD at the inclination angle of liquid crystal.
Embodiment
Will be with reference to the accompanying drawings in the following the preferred embodiments of the present invention that illustrate in greater detail.But this invention can realize and should not be construed as being limited to the embodiment that sets forth here with different forms.But, provide these embodiment so that the present invention is abundant and complete, and pass on scope of the present invention all sidedly those skilled in the art.In the accompanying drawings, for clear layer and the regional thickness exaggerated.Be appreciated that when layer or substrate be called as be in another layer or substrate " on " time, it can be located immediately on other layer or the substrate maybe can exist intervenient layer or substrate.
The present invention relates to a kind of liquid crystal indicator, and relate more specifically to a kind of liquid crystal indicator with thin film transistor base plate of multiple-unit interstitial structure, and the method for making this device, be used to maximize use at the light of the transmission area of reflection and transmission type LCD.
According to the present invention, provide by removing window that forms at organic insulator and the reflecting electrode that on organic insulator, forms to define transmission area and echo area respectively.
The cell gap of transmission area is different from the cell gap of echo area, to prevent the loss of the light in transmission area, has improved the optical transmission rate thus.In addition, further improve transmissivity by providing evenly distributed with the liquid crystal layer that forms zero degree liquid crystal inclination angle.
With reference now to accompanying drawing,, wherein similar mark is indicated same or analogous element, and Fig. 2 is the sectional view that shows the reflection and transmission type LCD of the first embodiment of the present invention.Fig. 3 is the planimetric map of thin film transistor base plate shown in Figure 2.
Please refer to Fig. 2 and 3, the reflection and transmission type LCD 500 of the first embodiment of the present invention comprises thin film transistor base plate 100, relatively is connected in the colored filter substrate 200 and the liquid crystal layer 300 between thin film transistor base plate 100 and colored filter substrate 200 of thin film transistor base plate 100.
Thin film transistor base plate 100 comprises first substrate 110, thin film transistor (TFT) 120, transmission electrode 150, organic insulator 160 and reflecting electrode 170.Thin film transistor (TFT) 120 comprises from the gate electrode 121 of gate line 131 branches of extending at first direction, and from source and drain electrode 124 and 125 in data line 133 branches of extending perpendicular to the second direction of first direction.On all surfaces of first substrate 110, deposit gate insulator 122 with grill-protected electrode 121, and form semiconductor layer 123 on the gate insulator in the zone above gate electrode 121 122.
Transmission electrode 150 comprises transparent conductive material, for example, and indium tin oxide (ITO) or indium-zinc oxide (IZO).Transmission electrode 150 covers a side of drain electrode 125 and is forming on gate insulator 122 above the presumptive area.
Organic insulator 160 comprises third rare resin of sensitization and provides on transmission electrode 150.The thickness range of organic insulator 160 from about 0.5 to about 2.5 μ m.Organic insulator 160 comprises the window 165 of the presumptive area that exposes transmission electrode 150.Can form window 165 to expose the presumptive area of transmission electrode 150 by removing part organic insulator 160.On the upper surface of organic insulator 160, form (embossing) pattern 162 of embossing.
Window 165 defines and is used for the interior lights that transmission comes the light generating device (not shown) that the organic display device 500 of comfortable reflection and transmission type provides.
On organic insulator 160, form metal reflecting electrode 170 with high reflectance by for example Al, Ag and Cr.Reflecting electrode 170 extends to the edge of the transmission electrode 150 that exposes through window 165 from the upper surface of organic insulator 160, to be electrically connected on transmission electrode 150 by window 165.The reflecting electrode 170 that forms on organic insulator 160 defines the echo area R that is used to reflect from the exterior light of the external light source incident of reflection and transmission type LCD 500.
Colored filter substrate 200 comprises second substrate 210, chromatic filter layer 220 and public electrode 230.Chromatic filter layer 220 is provided on second substrate 210 and comprises evenly distributed a plurality of red, green and blues (R, G and B) colour element.The transmission electrode 150 and the reflecting electrode 170 of thin film transistor base plate 100 provide public electrode 230 on chromatic filter layer 220 relatively.Similar to transmission electrode 150, public electrode 230 comprises ITO or IZO.
Liquid crystal layer 300 has the first thickness D corresponding to echo area R 1With the second thickness D corresponding to transmission area T 2The second thickness D 2To the first thickness D 1Ratio roughly be 2: 1.Therefore, the cell gap in transmission area T roughly is the twice of the cell gap in the R of echo area.
Underclad portion at thin film transistor base plate 100 provides first retardation plate 410 and first polarization plates 450, and in the top section of colored filter substrate 200 second retardation plate 420 and second polarization plates 460 is set.The polarization axle of first polarization plates 450 is perpendicular to the polarization axle of second polarization plates 460.First and second retardation plates 410 and 420 can be 1/4th retardation plates (λ/4), and it produces the quarter-wave phase change of polarized light.
Because the echo area R and the transmission area T of reflection and transmission type LCD 500 move in the multiple-unit clearance mode, wherein the cell gap of echo area R is less than the cell gap of transmission area T, the optical loss in transmission area T can be avoided, and the transmissivity among the transmission area T can be improved.
Fig. 4 A to 4D is used to illustrate the sectional view that is manufactured on thin film transistor base plate shown in Figure 2.According to the method for the thin film transistor base plate 100 of making embodiments of the invention, by being patterned at the first metal layer formation gate line 131 (shown in Figure 3) that forms on first substrate 110 and the gate electrode of telling from gate line 131 121.
Please refer to Fig. 4 A, gate insulator 122 covering gate polar curves 131 and gate electrode 121, and on gate insulator 122, form semiconductor layer 123 in the zone above the gate electrode 121.
Be patterned at second metal level formation data line 122 (shown in Figure 3) that forms on first substrate 110 and source electrode and drain electrode 124 and 125 of telling from data line 133.As a result, on first substrate 110, form thin film transistor (TFT) 120.
Please refer to Fig. 4 B, comprise the transparency conducting layer that comprises ITO or IZO that forms on first substrate 110 that has thin film transistor (TFT) 120 thereon by composition, form transmission electrode 150.Transmission electrode 150 is formed on the gate insulator 122, has predetermined zone and is electrically connected on drain electrode 125.
Please refer to Fig. 4 C, on gate insulator 122, form organic insulator 160.Form organic insulator 160 by photoetching process, wherein used the photoresist of sensitization with predetermined thickness.On first substrate 110, form photoresist.Organic insulator 160 is positioned at the left side of thin film transistor base plate 100 and right side and is included in the pattern of indentations 162 that its upper surface forms.In organic insulator 160, form window 165 to expose the presumptive area of transmission electrode 150.Be to form window 165, can remove predetermined portions corresponding to the organic insulator 160 of the desired region of transmission electrode 150.
Please refer to Fig. 4 D, the 3rd metal level that has high reflectance by composition forms reflecting electrode 170 on organic insulator 160.The 3rd metal level can be made by for example Al, Ag and Cr.Reflecting electrode 170 is electrically connected on transmission electrode 150 along one side of the transmission electrode 150 that exposes by window 165.
Fig. 5 is the sectional view that shows the reflection and transmission type LCD 500 of the second embodiment of the present invention.
Please refer to Fig. 5, the reflection and transmission type LCD 500 of the second embodiment of the present invention comprises thin film transistor base plate 100, relatively is connected in the colored filter substrate 200 and the liquid crystal layer 300 between thin film transistor base plate 100 and colored filter substrate 200 of thin film transistor base plate 100.
The gate driver circuit district GDA that reflection and transmission type LCD 500 has the pixel region DA of display image on it and provides in the neighboring area adjacent to pixel region DA.On a side of the sealant 350 that is used to connect thin film transistor base plate 100 and colored filter substrate 200, provide pixel region DA and gate driver circuit district GDA.
The pixel region DA of reflection and transmission type LCD 500 shown in Figure 5 is similar in appearance to the pixel region of reflection and transmission type LCD shown in Figure 2 500, and is not described in detail.
GDA provides gate driver circuit part 180 in the gate driver circuit district.Gate driver circuit part 180 provides and connects lead-in wire 185 and be connected in the gate line that forms so that gate drive signal (for example, driving voltage) is offered gate line in pixel region DA.
The organic insulator 160 that forms in pixel region DA extends to gate driver circuit district GDA with cover gate driving circuit section 180.The organic insulator 160 of the specific inductive capacity with the specific inductive capacity that is lower than liquid crystal layer 300 is provided between gate driver circuit part 180 and public electrode 230 as a result.Because electric capacity generally is proportional to specific inductive capacity, has the stray capacitance that the predetermined portions of replacing liquid crystal layers 300 than the organic insulator 160 of low-k can reduce generation between gate driver circuit part 180 and public electrode 230 by using.Therefore, prevent to provide drive signal to the gate line of pixel region DA because of the stray capacitance distortion from gate driver circuit part 180.
Fig. 6 is the block scheme that shows gate driver circuit part 180 shown in Figure 5.Fig. 7 is the synoptic diagram that shows the structure of gate driver circuit shown in Figure 6 one-level 181 partly.Please refer to Fig. 6, gate driver circuit part 180 comprises the shift register 182 with a plurality of orders level connected to one another (stage) 181.In shift register 182, the output terminal OUT of existing level (Present stage) 181 is connected in the input end IN of back level 181 and the control end CT of prime 181.
Please refer to Fig. 7, each level 181 has first to the 7th transistor NT1 to NT7 and capacitor C.Each first to the 7th transistor NT1 to NT7 is included in first conductive pattern 183 and second conductive pattern 184 that different layers provides.First conductive pattern 183 is electrically connected on second conductive pattern 184 to form a plurality of transistor NT1 to NT7.For example, second conductive pattern 184 that forms the 3rd transistor NT3 is electrically connected on first conductive pattern 183 that forms the first transistor NT1 and capacitor C.
First conductive pattern 183 is electrically connected on second conductive pattern 184 by the conductive welding disk CP that comprises ITO or IZO.Can use contact hole CON1 to be electrically connected conductive welding disk CP to the first and second conductive pattern 183 and 184.The conductive welding disk CP of a plurality of ITO of comprising or IZO can be provided on the surface of gate driver circuit part 180.Because organic insulator 160 (as shown in Figure 5) extends to gate driver circuit district GDA with cover gate driving circuit section 180, can reduce the stray capacitance that produces between the conductive welding disk CP of public electrode 230 and gate driver circuit part 180.
Though shown the level 181 that comprises first to the 7th transistor NT1 to NT7 in Fig. 7, the structure of each grade 181 can change.No matter the concrete structure of each grade 181 how, can in each level 181, provide a plurality of conductive welding disk CP.
Fig. 8 is the sectional view that shows the reflection and transmission type LCD 500 of the third embodiment of the present invention.Please refer to Fig. 8, the comprising thin film transistor base plate 100, relatively be connected in the colored filter substrate 200 and the liquid crystal layer 300 between thin film transistor base plate 100 and colored filter substrate 200 of thin film transistor base plate 100 of the reflection and transmission type LCD 500 of the third embodiment of the present invention.
First substrate 110, the thin film transistor (TFT) 120 that provides on first substrate 110, inorganic insulation layer 140, transmission electrode 150, organic insulator 160 and reflecting electrode 170 are provided thin film transistor base plate 100.
All surfaces at first substrate 110 forms inorganic insulation layer 140 with protective film transistor 120.Inorganic insulation layer 140 comprises the transparent inorganic material, for example, and silicon nitride SiN xOr chromium oxide Cr 2O 3
In inorganic insulation layer 140, form the drain electrode 125 of contact hole 145 with exposed film transistor 120.On inorganic insulation layer 140, provide the transmission electrode 150 of the transparent conductive material that comprises ITO for example or IZO, and transmission electrode 140 is electrically connected on drain electrode 125 by contact hole 145.
Organic insulator 160 comprises third rare resin of sensitization, and in the coupling part that provides on the transmission electrode 150 and cover between drain electrode 125 and the transmission electrode 150.Therefore, organic insulator 160 also covers contact hole 145.Organic insulator 160 has from about 0.5 thickness to about 2.5 μ m.
In addition, on the upper surface of organic insulator 160, form pattern of indentations 162.Organic insulator 160 also comprises the window 165 of the presumptive area that exposes transmission electrode 150.Can form window 165 by the presumptive area of removing organic insulator 160,, define transmission area T thus so that expose transmission electrode 150.
Reflecting electrode 170 is made by the metal with high reflectance, for example, and Al, Ag and Cr, and on organic insulator 160, provide.Reflecting electrode 170 extends to one side of the transmission electrode 150 that is exposed by window 165 from the upper surface of organic insulator 160, to be electrically connected on transmission electrode 150.Reflecting electrode 170 defines the reflection of light district R that is used to reflect from outside incident.
Colored filter substrate 200 has function and the structure similar to colored filter substrate shown in Figure 2 200, and will not be described further below.
Liquid crystal layer 300 has the 3rd thickness D corresponding to echo area R 3With the 4th thickness D corresponding to transmission area T 4The 4th thickness D 4To the 3rd thickness D 3Ratio roughly be 2: 1.
Underclad portion at thin film transistor base plate 100 provides first retardation plate 410 and first polarization plates 450, and in the top section of colored filter substrate 200 second retardation plate 420 and second polarization plates 460 is set.The polarization axle of first polarization plates 450 is perpendicular to the polarization axle of second polarization plates 460.First and second retardation plates 410 and 420 can be 1/4th retardation plates (λ/4), and it produces the quarter-wave phase change of polarized light.
Because the echo area R and the transmission area T of reflection and transmission type LCD 500 move in the multiple-unit clearance mode, wherein the cell gap of echo area R is less than the cell gap of transmission area T, the optical loss in transmission area T can be avoided, and the transmissivity among the transmission area T can be improved.
Fig. 9 A to 9D is used to illustrate the sectional view that is manufactured on thin film transistor base plate shown in Figure 8 100.Please refer to Fig. 9 A, on first substrate 110, form thin film transistor (TFT) 120.Described the method for formation thin film transistor (TFT) 120 with reference to figure 4A, and will not be described further below.
Forming the thin film transistor (TFT) 120 that inorganic insulation layer 140 forms on first substrate 110 with protection on all surfaces of first substrate 110.In addition, in inorganic insulation layer 140, form the drain electrode 125 of contact hole 145 with exposed film transistor 120.
Please refer to Fig. 9 B, form transmission electrode 150 by the composition transparency conducting layer with preset width.Transparency conducting layer comprises ITO or IZO.Transmission electrode 150 is formed on the inorganic insulation layer 140, has predetermined zone and is electrically connected on drain electrode 125 by contact hole 145.
Please refer to Fig. 9 C, form organic insulator 160, wherein used the photoresist of sensitization with predetermined thickness by photoetching process.Form photoresist having on first substrate 110 of transmission electrode 150.
Organic insulator 160 is included in the window 165 of its upper surface pattern of indentations 162 that forms and the presumptive area that exposes transmission electrode 150.The predetermined portions that can remove organic insulator 160 is to form the window 165 of the presumptive area that exposes transmission electrode 150.
Please refer to Fig. 9 D, the layer that composition is made by for example high-reflectivity metal of Al, Ag and Cr forms reflecting electrode 170.Metal level is provided on the organic insulator 160.Reflecting electrode 170 extends to one side of the transmission electrode 150 that exposes by window 165 from the upper surface of organic insulator 160, to be electrically connected on transmission electrode 150.
Figure 10 is the sectional view that shows the reflection and transmission type LCD 500 of the fourth embodiment of the present invention.Please refer to Figure 10, the reflection and transmission type LCD 500 of the fourth embodiment of the present invention comprises thin film transistor base plate 100, relatively is connected in the colored filter substrate 200 and the liquid crystal layer 300 between thin film transistor base plate 100 and colored filter substrate 200 of thin film transistor base plate 100.
Reflection and transmission type LCD 500 has the pixel region DA that is used for display image.Gate driver circuit district GDA is provided in the neighboring area adjacent to pixel region DA.On a side of the sealant 350 that is used to connect thin film transistor base plate 100 and colored filter substrate 200, provide pixel region DA and gate driver circuit district GDA.
The pixel region DA of reflection and transmission type LCD 500 is similar in appearance to the pixel region of reflection and transmission type LCD shown in Figure 2 500, and followingly do not further describe.
In addition, gate driver circuit district GDA except the inorganic insulation layer 140 similar in appearance to the gate driver circuit district GDA shown in Fig. 6 and 7, this inorganic insulation layer 140 extends and provides at second conductive pattern 184 of as shown in Figure 7 level 181 from pixel region DA.First and second conductive patterns 183 and 184 rely on the contact hole by forming therein to be electrically connected to each other by conductive welding disk CP.
The organic insulator 160 that forms in pixel region DA extends to gate driver circuit district GDA with cover gate driving circuit section 180.The organic insulator 160 of the specific inductive capacity with the specific inductive capacity that is lower than liquid crystal layer 300 can be provided between the public electrode 230 of gate driver circuit part 180 and colored filter substrate 200.Because electric capacity generally is proportional to specific inductive capacity, has the stray capacitance that the predetermined portions of replacing liquid crystal layers 300 than the organic insulator 160 of low-k can reduce generation between gate driver circuit part 180 and public electrode 230 by using.Therefore, prevent to provide drive signal to the gate line of pixel region DA because of the stray capacitance distortion from gate driver circuit part 180.
Figure 11 A is the sectional view that shows the reflection and transmission type LCD 500 of the fifth embodiment of the present invention.Figure 11 B is the sectional view that shows the reflection and transmission type LCD 500 of the sixth embodiment of the present invention.
Please refer to Figure 11 A, the reflection and transmission type LCD 500 of the fifth embodiment of the present invention comprises thin film transistor base plate 100, relatively is connected in the colored filter substrate 200 and the liquid crystal layer 300 between thin film transistor base plate 100 and colored filter substrate 200 of thin film transistor base plate 100.
Thin film transistor base plate 100 has function and the structure similar to thin film transistor base plate shown in Figure 8 100, so will not further describe thin film transistor base plate 100 hereinafter.
Colored filter substrate 200 comprises second substrate 210, thickness adjusted member 215, has first thickness T 1With second thickness T 2 Chromatic filter layer 220a and public electrode 230.
On second substrate 210, provide thickness adjusted member 215.Expose zone by the predetermined portions of removing thickness adjusted member 215 corresponding to second substrate 210 of window 165.In other words, the zone of removing the thickness adjusted member stride across window 165 is with the part of second substrate 210 that is exposed to the thickness adjusted member and forms for 215 times.
On second substrate 210, provide color filter layers 220a with cladding thickness adjustment means 215.Because the removal of the predetermined portions of thickness adjusted member 215, chromatic filter layer 220a has first thickness T corresponding to echo area R 1With second thickness T corresponding to transmission area T 2Second thickness T 2To first thickness T 1Ratio roughly be 2: 1.
Go into to inject echo area R and by the light of reflective electrodes reflects by having first thickness T 1Twice of the presumptive area of chromatic filter layer 220a.The light that sees through transmission area T is by having second thickness T 2 Chromatic filter layer 220a predetermined portions once.Therefore, the two all passes through the identical overall area of chromatic filter layer 220a reflected light and transmitted light, so can obtain identical color reproduction characteristic with respect to echo area R and transmission area T.
Please refer to Figure 11 B, the reflection and transmission type LCD 500 of the sixth embodiment of the present invention comprises thin film transistor base plate 100, relatively is connected in the colored filter substrate 200 and the liquid crystal layer 300 between thin film transistor base plate 100 and colored filter substrate 200 of thin film transistor base plate 100.
Thin film transistor base plate 100 has function and the structure similar to thin film transistor base plate shown in Figure 8 100, so will not further describe thin film transistor base plate 100 hereinafter.
The chromatic filter layer 220b that provides on second substrate 210 is provided colorized optical filtering laminar substrate 200.Chromatic filter layer 220b does not have homogeneous thickness.Chromatic filter layer 220b comprises that it has the 3rd thickness T 3Presumptive area and its have the 4th thickness T 4Presumptive area.The 3rd thickness and the 4th thickness T 3, T 4Respectively corresponding to echo area R and transmission area T.The 4th thickness T 4To the 3rd thickness T 3Ratio roughly be 2: 1.
Similar in appearance to the situation that Figure 11 A describes, go into to inject echo area R and by the light of reflective electrodes reflects by having the 3rd thickness T 3Twice of the presumptive area of chromatic filter layer 220b.The light that sees through transmission area T is by having the 4th thickness T 4Chromatic filter layer 220b predetermined portions once.Therefore, reflected light and the identical overall area of transmitted light by chromatic filter layer 220b are so can obtain identical color reproduction characteristic with respect to echo area R and transmission area T.
Figure 12 is the sectional view that shows the reflection and transmission type LCD 500 of the seventh embodiment of the present invention.
Please refer to Figure 12, the reflection and transmission type LCD 500 of the seventh embodiment of the present invention comprises thin film transistor base plate 100, relatively is connected in the colored filter substrate 200 and the liquid crystal layer 300 between thin film transistor base plate 100 and colored filter substrate 200 of thin film transistor base plate 100.
Thin film transistor base plate 100 comprises first substrate 110, thin film transistor (TFT) 120, organic insulator 160, transmission electrode 190 and reflecting electrode 195.
Thin film transistor (TFT) 120 comprises from the gate electrode 121 of gate line 131 (Fig. 3) branch of extending at first direction, and from source and drain electrode 124 and 125 in data line 133 (Fig. 3) branch of extending perpendicular to the second direction of first direction.On all surfaces of first substrate 110, deposit gate insulator 122 with grill-protected electrode 121, and on gate insulator 122, form semiconductor layer 123 corresponding to gate electrode 121.
Organic insulator 160 comprises third rare resin of sensitization and provides on first substrate 110 that is formed with thin film transistor (TFT) 120 thereon.In organic insulator 160, be formed for the contact hole 167 of the drain electrode 125 of exposed film transistor 120.On the upper surface of organic insulator 160, form pattern of indentations 162.
Transmission electrode 190 is formed on the organic insulator 160 and comprises ITO or IZO.Transmission electrode 190 is electrically connected on drain electrode 125 by contact hole 167.On transmission electrode 190, form and comprise for example reflecting electrode 195 of the metal of Al, Ag and Cr with high reflectance.
Window 169 defines and is used for the interior lights that transmission comes the light generating device (not shown) that the organic display device 500 of comfortable reflection and transmission type provides.The part of the reflecting electrode 195 that removal provides on transmission electrode 190 is so that expose transmission electrode 190 corresponding to transmission area T.The reflecting electrode 195 that forms on transmission electrode 190 defines the echo area R that is used to reflect from the exterior light of the external light source incident of reflection and transmission type LCD 500.
Colored filter substrate 200 comprises second substrate 210, chromatic filter layer 220 and public electrode 230.Chromatic filter layer 220 is provided on second substrate 210 and comprises evenly distributed a plurality of red, green and blues (R, G and B) colour element.
On chromatic filter layer 220, provide public electrode 230, and public electrode 230 is corresponding to the transmission electrode 190 and the reflecting electrode 195 of thin film transistor base plate 100.Similar to transmission electrode 190, public electrode 230 comprises ITO or IZO.
Between thin film transistor base plate 110 and colored filter substrate 200, liquid crystal layer 300 is set.Liquid crystal layer 300 is divided into corresponding to the first in the occupied zone of contact hole in the R of echo area 167, corresponding to the second portion of noncontact bore region in the echo area with corresponding to the third part of transmission area T.First, second and third part have the thickness that differs from one another.
The thickness of first is defined as the 5th thickness D 5, the thickness of second portion is defined as the 6th thickness D 6And the thickness of third part is defined as the 7th thickness D 7Five, the 6th and the 7th thickness meets the following conditions: D 6＜D 5≤ D 7In addition, the 7th thickness D 7With the 6th thickness D 6Ratio roughly be 2: 1.
The condition of the blooming that provides with the liquid crystal molecule that forms liquid crystal layer 300 with in the upper and lower part of liquid crystal layer 300 for the optimum thickness of the liquid crystal layer 300 of echo area R and transmission area T changes.Preferred thickness can comprise less than the 6th thickness D of 1.7 μ m roughly 6With less than the 7th thickness D of 3.3 μ m roughly 7
Because the echo area R and the transmission area T of reflection and transmission type LCD 500 move in the multiple-unit clearance mode, wherein the cell gap of echo area R is different from the cell gap of transmission area T, the optical loss that causes by polarization characteristic can be in transmission area T, avoided, and the transmissivity among the transmission area T can be improved.
Figure 13 is the curve map of demonstration according to the transmissivity of the reflection and transmission type LCD at the inclination angle of liquid crystal.
The liquid crystal inclination angle is when inserting liquid crystal layer between first and second substrates, the angle that defines between the second order direction of the liquid crystal layer of the first order direction of the liquid crystal layer of contiguous first substrate and contiguous second substrate.Orientation represents to have the long axis direction of the liquid crystal molecule of major axis and minor axis.Please refer to Figure 13, along with the increase at liquid crystal inclination angle, the transmissivity of reflection and transmission type LCD is reducing.
Have echo area and transmission area according to reflection and transmission type LCD of the present invention, and in the operation of multiple-unit clearance mode, wherein the cell gap of echo area R is half of cell gap of transmission area T, with the optical loss of avoiding being caused by polarization characteristic.
When the liquid crystal inclination angle is zero, mean promptly and arrange liquid crystal layer equably that the transmissivity in transmission area is 40% approximately.On the contrary, if the liquid crystal inclination angle is 90 °, mean that promptly liquid crystal layer is twisted, the transmissivity in transmission area approximately is 15%, and it is lower than the transmissivity in transmission area when the liquid crystal inclination angle is zero.
Therefore, in order further to improve the transmissivity in the transmission area of described reflection and transmission type LCD with multiple-unit interstitial structure, can arrange liquid crystal layer equably to be formed on zero degree or near the liquid crystal inclination angle of zero degree referring to figs. 2 to 12B.In optional embodiment, the liquid crystal inclination angle also can roughly change between 0 and 50 degree, and wherein the scope of transmissivity is from about 40% to 30%.
As mentioned above, according to the present invention, provide window that forms by the predetermined portions of removing organic insulator and the reflecting electrode that on organic insulator, forms to define transmission area and echo area respectively.
The cell gap of transmission area is different from the cell gap of echo area, thereby can avoid the optical loss in transmission area, improves optical transmission thus.In addition, by providing evenly distributed liquid crystal layer further to improve transmissivity to form zero degree liquid crystal inclination angle.
Although described illustrative embodiment with reference to the accompanying drawings here, but be appreciated that and the invention is not restricted to the embodiment that those are determined, and one of ordinary skill in the art is to be understood that under the situation that does not deviate from the spirit and scope of the present invention, can realize different other change and retouching.Change that all are such and retouching are intended to be included in the scope of the present invention that is defined by appended claim.

Claims (58)

1. liquid crystal indicator comprises:
First substrate comprises the thin film transistor (TFT) that forms thereon;
First electrode is formed on described first substrate and is electrically connected on described thin film transistor (TFT);
First insulation course is formed on first substrate that comprises described thin film transistor (TFT) and described first electrode;
Window is formed in described first insulation course, and described window exposes the presumptive area of described first electrode;
Second electrode is provided on described first insulation course and is electrically connected on described first electrode;
Second substrate comprises the third electrode that forms thereon;
First gap is between the surface of the surface of described third electrode and the presumptive area of described first electrode; With
Second gap, between the surface and the surface of described second electrode of described third electrode, wherein said first gap and second gap comprise liquid crystal layer.
2. device as claimed in claim 1, wherein said first electrode are that transmission electrode and described window defining are used for the optical transmission district of transmission from the internal light source of described device.
3. device as claimed in claim 1, wherein said second electrode are that reflecting electrode and the region deviding that comprises reflecting electrode are used to reflect the reflection of light district from the outside light source of described device.
4. device as claimed in claim 1, wherein said first gap is greater than described second gap.
5. device as claimed in claim 1, wherein said first gap are about two double-lengths in described second gap.
6. device as claimed in claim 1, wherein said first insulation course is an organism.
7. device as claimed in claim 1, wherein said first insulation course comprise third rare resin of sensitization.
8. device as claimed in claim 1, the scope of the thickness of wherein said first insulation course is from about 0.5 μ m to about 2.5 μ m.
9. device as claimed in claim 1, one of wherein said first electrode and third electrode comprise transparent conductive material.
10. device as claimed in claim 1, wherein said second electrode comprises the metal with high reflectance.
11. device as claimed in claim 1 also comprises the gate driver circuit district with gate driver circuit part.
12. device as claimed in claim 11, wherein said first insulation course extend into the described gate driver circuit district on described gate driver circuit part.
13. device as claimed in claim 11 also comprises second insulation course, it is formed on described first substrate and extends into described gate driver circuit district.
14. device as claimed in claim 1 also comprises second insulation course, it is formed on described first substrate.
15. device as claimed in claim 14, wherein said second insulation course comprise that contact hole and described first electrode are electrically connected on described thin film transistor (TFT) by described contact hole.
16. device as claimed in claim 1 also comprises chromatic filter layer and thickness adjusted member, it is formed on described second substrate, and wherein said chromatic filter layer is arranged on the described thickness adjusted member.
17. device as claimed in claim 16, wherein removing the predetermined portions corresponding to the thickness adjusted member of described window, is not corresponding to about twice of the thickness in second district of the described chromatic filter layer of described window corresponding to the thickness in first district of the described chromatic filter layer of described window thus.
18. device as claimed in claim 1, also comprise chromatic filter layer, it is formed on described second substrate, wherein corresponding to the thickness in first district of the described chromatic filter layer of described window greater than not corresponding to the thickness in second district of the described chromatic filter layer of described window.
19. device as claimed in claim 1, also comprise chromatic filter layer, it is formed on described second substrate, is not corresponding to about twice of the thickness in second district of the described chromatic filter layer of described window corresponding to the thickness in first district of the described chromatic filter layer of described window wherein.
20. arranging to form equably, device as claimed in claim 1, wherein said liquid crystal layer be about 0 ° liquid crystal inclination angle.
21. a liquid crystal indicator comprises:
First substrate comprises the thin film transistor (TFT) that forms thereon;
Insulation course is formed on described first substrate that comprises described thin film transistor (TFT);
First electrode is formed on the described insulation course and is electrically connected on described thin film transistor (TFT);
Second electrode is provided on described first electrode, and the predetermined portions of wherein removing described second electrode is used to expose the predetermined portions of described first electrode;
Second substrate comprises the third electrode that forms thereon;
First gap is between the surface of the surface of described third electrode and the predetermined portions of described first electrode; With
Second gap, between the surface and the surface of described second electrode of described third electrode, wherein said first gap and second gap comprise liquid crystal layer.
22. being transmission electrode and the region deviding that comprises the predetermined portions of described first electrode, device as claimed in claim 21, wherein said first electrode be used for the optical transmission district of transmission from the internal light source of described device.
23. being reflecting electrode and the region deviding that comprises reflecting electrode, device as claimed in claim 21, wherein said second electrode be used to reflect reflection of light district from the light source of the outside of described device.
24. device as claimed in claim 21, wherein said first gap is greater than described second gap.
25. device as claimed in claim 21, wherein said first gap are about two double-lengths in described second gap.
26. device as claimed in claim 21, wherein said first gap less than about 3.3 μ m and described second gap less than about 1.7 μ m.
27. device as claimed in claim 21, wherein said insulation course is an organism.
28. device as claimed in claim 21, wherein said insulation course comprise third rare resin of sensitization.
29. device as claimed in claim 21, one of wherein said first electrode and third electrode comprise transparent conductive material.
30. device as claimed in claim 21, wherein said second electrode comprises the metal with high reflectance.
31. device as claimed in claim 21 also comprises contact hole, it is formed in the described insulation course, and wherein said first electrode is electrically connected on described thin film transistor (TFT) by described contact hole.
32. device as claimed in claim 31, also comprise third space, its between the surface of described third electrode and the surface of described second electrode in the zone that occupies by described contact hole, wherein said third space comprises described liquid crystal layer, and following the defining of relation between the size of described first, second and third space:
Second gap＜third space≤first gap.
33. arranging to form equably, device as claimed in claim 21, wherein said liquid crystal layer be about 0 ° liquid crystal inclination angle.
34. a method that forms liquid crystal indicator comprises:
On first substrate, form thin film transistor (TFT);
Be patterned at first conductive layer that forms on described first substrate to form first electrode on first substrate, wherein said first electrode is electrically connected on described thin film transistor (TFT);
First insulation course is set comprising on described first substrate of the described thin film transistor (TFT) and first electrode;
By in described first insulation course, forming the presumptive area that window exposes described first electrode;
Be patterned at the metal level that forms on described first insulation course to form second electrode on first insulation course, wherein said second electrode is electrically connected on described first electrode;
Composition second conductive layer is to form third electrode on second substrate;
Locate described first substrate and described second substrate between the surface of the surface of described third electrode and the presumptive area of described first electrode, forming first gap, and between the surface of the surface of described third electrode and described second electrode, form second gap; With
Between described first gap and second gap, insert liquid crystal layer.
35. as the method for claim 34, wherein said first electrode is that transmission electrode and described window defining are used for the optical transmission district of transmission from the internal light source of described device.
36. as the method for claim 34, wherein said second electrode is that the reflection of light district that is used to reflect from the light source of the outside of described device can be defined in reflecting electrode and the zone that comprises reflecting electrode.
37. as the method for claim 34, wherein said first gap is greater than described second gap.
38. as the method for claim 34, wherein said first gap is about two double-lengths in described second gap.
39. as the method for claim 34, wherein said first insulation course is an organism.
40. as the method for claim 34, wherein said first insulation course comprises third rare resin of sensitization.
41. as the method for claim 34, the scope of the thickness of wherein said first insulation course is from about 0.5 μ m to about 2.5 μ m.
42. as the method for claim 34, one of wherein said first electrode and second conductive layer are transparent, and comprise one of indium tin oxide or indium-zinc oxide at least.
43. as the method for claim 34, wherein said metal level has high reflectance.
44., also be included in the gate driver circuit district that comprises the gate driver circuit part be provided on described first substrate as the method for claim 34.
45., also comprise described first insulation course is extended into gate driver circuit district on the described gate driver circuit part as the method for claim 44.
46. as the method for claim 44, also be included on described first substrate second insulation course be set, and described second insulation course is extended into described gate driver circuit district.
47., also be included on described first substrate second insulation course be set as the method for claim 34.
48. as the method for claim 47, wherein said second insulation course comprises that contact hole and described first electrode are electrically connected on described thin film transistor (TFT) by described contact hole.
49. the method as claim 34 also comprises:
On described second substrate, form the thickness adjusted member; With
On described thickness adjusted member, chromatic filter layer is set.
50. method as claim 49, also comprising the predetermined portions of removal corresponding to the described thickness adjusted member of described window, is not corresponding to about twice of the thickness in second district of the described chromatic filter layer of described window corresponding to the thickness in first district of the described chromatic filter layer of described window thus.
51. as the method for claim 34, also be included on described second substrate and form chromatic filter layer, wherein corresponding to the thickness in first district of the described chromatic filter layer of described window greater than not corresponding to the thickness in second district of the described chromatic filter layer of described window.
52. method as claim 34, also being included on described second substrate and forming chromatic filter layer, is not corresponding to about twice of the thickness in second district of the described chromatic filter layer of described window corresponding to the thickness in first district of the described chromatic filter layer of described window wherein.
53., comprise that also arranging liquid crystal layer equably is about 0 ° liquid crystal inclination angle with formation as the method for claim 34.
54. a method that forms liquid crystal indicator comprises:
On first substrate, form thin film transistor (TFT);
Insulation course is set comprising on described first substrate of described thin film transistor (TFT);
Composition first conductive layer is to form first electrode on described insulation course, wherein said first electrode is electrically connected on described thin film transistor (TFT);
Be patterned at the metal level that forms on described first electrode to form second electrode, the predetermined portions of wherein removing described second electrode is used to expose the predetermined portions of described first electrode;
Composition second conductive layer is to form third electrode on described second substrate;
Locate described first substrate and second substrate between the surface of the surface of described third electrode and the predetermined portions of described first electrode, forming first gap, and between the surface of the surface of described third electrode and described second electrode, form second gap; With
Between described first gap and described second gap, insert liquid crystal layer.
55. as the method for claim 54, wherein said first electrode is that transmission electrode and the region deviding that comprises the predetermined portions of described first electrode are used for the optical transmission district of transmission from the internal light source of described device.
56. as the method for claim 54, wherein said second electrode is that reflecting electrode and the region deviding that comprises reflecting electrode are used to reflect the reflection of light district from the light source of the outside of described device.
57. as the method for claim 54, wherein said first gap is greater than described second gap.
58. as the method for claim 54, wherein said first gap is about two double-lengths in described second gap.
CNB2003801029967A 2002-12-06 2003-11-28 Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same Expired - Fee Related CN100465718C (en)

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US7940359B2 (en) 2007-04-25 2011-05-10 Au Optronics Corporation Liquid crystal display comprising a dielectric layer having a first opening surrounding a patterned structure and exposing a portion of a first pixel electrode and a second pixel electrode formed on the dielectric layer
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