CN1707624A - 垂直磁记录介质、其制造方法及磁存储器件 - Google Patents
垂直磁记录介质、其制造方法及磁存储器件 Download PDFInfo
- Publication number
- CN1707624A CN1707624A CNA2005100702698A CN200510070269A CN1707624A CN 1707624 A CN1707624 A CN 1707624A CN A2005100702698 A CNA2005100702698 A CN A2005100702698A CN 200510070269 A CN200510070269 A CN 200510070269A CN 1707624 A CN1707624 A CN 1707624A
- Authority
- CN
- China
- Prior art keywords
- underlayer
- recording medium
- layer
- magnetic
- seed layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000004519 manufacturing process Methods 0.000 claims description 13
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- 229910020056 Mg3N2 Inorganic materials 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/708—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by addition of non-magnetic particles to the layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
- G11B5/737—Physical structure of underlayer, e.g. texture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
Landscapes
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004144011 | 2004-05-13 | ||
JP2004144011 | 2004-05-13 | ||
JP2005062662 | 2005-03-07 | ||
JP2005062662A JP2005353256A (ja) | 2004-05-13 | 2005-03-07 | 垂直磁気記録媒体およびその製造方法、磁気記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1707624A true CN1707624A (zh) | 2005-12-14 |
CN100440325C CN100440325C (zh) | 2008-12-03 |
Family
ID=35309788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100702698A Active CN100440325C (zh) | 2004-05-13 | 2005-05-13 | 垂直磁记录介质、其制造方法及磁存储器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7767322B2 (zh) |
JP (1) | JP2005353256A (zh) |
KR (1) | KR100819410B1 (zh) |
CN (1) | CN100440325C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7799446B2 (en) | 2007-02-20 | 2010-09-21 | Showa Denko K.K. | Perpendicular magnetic recording medium and manufacturing method thereof, magnetic recording apparatus |
CN101258542B (zh) * | 2005-12-26 | 2012-01-25 | 昭和电工株式会社 | 磁记录介质以及磁记录和再现装置 |
CN104952463A (zh) * | 2014-03-31 | 2015-09-30 | 索尼公司 | 磁记录介质 |
CN105321536A (zh) * | 2014-07-30 | 2016-02-10 | 株式会社东芝 | 磁记录介质及磁记录再现装置 |
TWI823129B (zh) * | 2020-09-03 | 2023-11-21 | 日商Jx金屬股份有限公司 | 濺射靶及其製造方法,以及磁性記錄介質的製造方法 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100624418B1 (ko) * | 2004-02-25 | 2006-09-18 | 삼성전자주식회사 | 수직자기기록매체 및 그 제조방법 |
US20070099032A1 (en) * | 2005-11-02 | 2007-05-03 | Heraeus, Inc., A Corporation Of The State Of Arizona | Deposition of enhanced seed layer using tantalum alloy based sputter target |
US8309238B2 (en) | 2005-12-26 | 2012-11-13 | Showa Denko K.K. | Magnetic recording medium and magnetic recording and reproducing device |
KR100738105B1 (ko) * | 2006-02-09 | 2007-07-12 | 삼성전자주식회사 | 확산 방지층이 삽입된 연자성 하지층을 포함하는 수직 자기기록 매체 |
US20070190364A1 (en) * | 2006-02-14 | 2007-08-16 | Heraeus, Inc. | Ruthenium alloy magnetic media and sputter targets |
US7736766B2 (en) * | 2006-02-24 | 2010-06-15 | Seagate Technology Llc | Magnetic storage media with Ag, Au-containing magnetic layers |
JP2007234164A (ja) * | 2006-03-02 | 2007-09-13 | Fujitsu Ltd | 垂直磁気記録媒体、その製造方法および磁気記憶装置 |
JP4922648B2 (ja) * | 2006-03-31 | 2012-04-25 | 昭和電工株式会社 | 垂直磁気記録媒体、その製造方法、および磁気記憶装置 |
KR20080017804A (ko) * | 2006-08-22 | 2008-02-27 | 삼성전자주식회사 | 자성막 형성방법, 이 방법으로 형성된 자성막을 구비하는패턴화된 자기 기록 매체 및 그 제조방법 |
JP2008084479A (ja) * | 2006-09-28 | 2008-04-10 | Fujitsu Ltd | 垂直磁気記録媒体及びその製造方法 |
KR100803217B1 (ko) * | 2006-10-04 | 2008-02-14 | 삼성전자주식회사 | 자기기록매체 및 그 제조방법 |
US7704614B2 (en) * | 2006-10-20 | 2010-04-27 | Seagate Technology Llc | Process for fabricating patterned magnetic recording media |
JP2008140436A (ja) * | 2006-11-30 | 2008-06-19 | Fujitsu Ltd | 磁気記録媒体、磁気記録装置、および磁気記録媒体の製造方法 |
JP2008210446A (ja) * | 2007-02-26 | 2008-09-11 | Fujitsu Ltd | 磁気記録媒体およびその製造方法 |
JP2008276863A (ja) * | 2007-04-27 | 2008-11-13 | Fujitsu Ltd | 垂直磁気記録媒体、その製造方法及び磁気記録装置 |
JP2008287771A (ja) * | 2007-05-15 | 2008-11-27 | Fujitsu Ltd | 垂直磁気記録媒体、その製造方法及び磁気記録装置 |
JP2008293559A (ja) * | 2007-05-22 | 2008-12-04 | Fujitsu Ltd | 磁気記録媒体及び磁気記憶装置 |
US20080292908A1 (en) * | 2007-05-24 | 2008-11-27 | Fujitsu Limited | Perpendicular magnetic recording medium, method of manufacturing perpendicular magnetic recording medium, and magnetic recording apparatus |
US8298689B2 (en) * | 2007-05-31 | 2012-10-30 | Wd Media (Singapore) Pte. Ltd. | Method of manufacturing a perpendicular magnetic recording medium |
JP5397926B2 (ja) * | 2007-08-31 | 2014-01-22 | 昭和電工株式会社 | 垂直磁気記録媒体、その製造方法および磁気記録再生装置 |
US7776388B2 (en) * | 2007-09-05 | 2010-08-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Fabricating magnetic recording media on patterned seed layers |
JP4993296B2 (ja) * | 2007-11-29 | 2012-08-08 | 富士電機株式会社 | 垂直磁気記録媒体 |
JP5213470B2 (ja) * | 2008-02-01 | 2013-06-19 | 昭和電工株式会社 | 垂直磁気記録媒体及び磁気記憶装置 |
JP4922995B2 (ja) | 2008-05-30 | 2012-04-25 | 昭和電工株式会社 | 垂直磁気記録媒体及び磁気記憶装置 |
JP2009289360A (ja) | 2008-05-30 | 2009-12-10 | Fujitsu Ltd | 垂直磁気記録媒体及び磁気記憶装置 |
US8394243B1 (en) | 2008-07-24 | 2013-03-12 | Wd Media, Inc. | Sputtered cobalt oxide for perpendicular magnetic recording medium with low media noise |
JP2010033632A (ja) | 2008-07-25 | 2010-02-12 | Showa Denko Kk | 磁気記憶媒体および情報記憶装置 |
US8488276B1 (en) | 2008-09-30 | 2013-07-16 | WD Media, LLC | Perpendicular magnetic recording medium with grain isolation magnetic anistropy layer |
JP5259645B2 (ja) | 2010-04-14 | 2013-08-07 | 株式会社東芝 | 磁気記録媒体及びその製造方法 |
US20120099220A1 (en) * | 2010-10-21 | 2012-04-26 | Hitachi Global Storage Technologies Netherlands B. V. | Perpendicular magnetic recording medium (pmrm) and systems thereof |
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US8625233B1 (en) * | 2012-09-20 | 2014-01-07 | Western Digital (Fremont), Llc | System and method for fabricating a magnetic recording pole |
JP6307879B2 (ja) * | 2013-05-17 | 2018-04-11 | ソニー株式会社 | 磁気記録媒体およびその製造方法 |
JP6205871B2 (ja) * | 2013-06-05 | 2017-10-04 | ソニー株式会社 | 磁気記録媒体 |
JP6303733B2 (ja) * | 2014-03-31 | 2018-04-04 | ソニー株式会社 | 磁気記録媒体およびその製造方法、ならびに成膜装置 |
WO2015173851A1 (ja) * | 2014-05-14 | 2015-11-19 | シンクロア株式会社 | 無影灯 |
US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
US9990940B1 (en) | 2014-12-30 | 2018-06-05 | WD Media, LLC | Seed structure for perpendicular magnetic recording media |
US9934797B2 (en) * | 2016-04-26 | 2018-04-03 | Tdk Corporation | Multilayer element including base multilayer body, magnetic sensor and microwave assisted magnetic head |
CN113228208B (zh) | 2018-10-30 | 2023-06-02 | 田中贵金属工业株式会社 | 面内磁化膜、面内磁化膜多层结构、硬偏置层、磁阻效应元件和溅射靶 |
CN110504553B (zh) * | 2019-08-20 | 2021-01-12 | 航天科工武汉磁电有限责任公司 | 一种电损耗材料与磁性材料复合的多层超宽带吸波体 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2524514B2 (ja) | 1987-09-21 | 1996-08-14 | 日立マクセル株式会社 | 磁気記録媒体 |
JP3762277B2 (ja) | 2000-09-29 | 2006-04-05 | キヤノン株式会社 | 磁気記録媒体及びその製造方法 |
JP2003115106A (ja) * | 2001-07-31 | 2003-04-18 | Fuji Electric Co Ltd | 垂直磁気記録媒体およびその製造方法 |
JP2003217107A (ja) | 2002-01-17 | 2003-07-31 | Fuji Electric Co Ltd | 磁気記録媒体 |
SG118182A1 (en) | 2002-03-19 | 2006-01-27 | Fuji Electric Co Ltd | Method for producing a magnetic recording medium and a magnetic recording medium produced by the method |
JP4123008B2 (ja) | 2002-03-19 | 2008-07-23 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体及びその製造方法 |
JP3900999B2 (ja) | 2002-04-16 | 2007-04-04 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体 |
JP4540288B2 (ja) | 2002-06-17 | 2010-09-08 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体およびその製造方法 |
JP4224804B2 (ja) * | 2002-06-19 | 2009-02-18 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体の製造方法 |
JP3609393B2 (ja) * | 2002-06-20 | 2005-01-12 | 日立マクセル株式会社 | 磁気記録媒体及びその製造方法並びに磁気記録装置 |
JP2004134041A (ja) * | 2002-10-15 | 2004-04-30 | Hitachi Ltd | 垂直磁気記録媒体およびその製造方法ならびに磁気記憶装置 |
US7175925B2 (en) * | 2003-06-03 | 2007-02-13 | Seagate Technology Llc | Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same |
JP4188196B2 (ja) * | 2003-10-06 | 2008-11-26 | 株式会社東芝 | 垂直磁気記録媒体、その製造方法、及びこれを用いた磁気記録再生装置 |
JP2005190517A (ja) * | 2003-12-24 | 2005-07-14 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体及び磁気記憶装置 |
-
2005
- 2005-03-07 JP JP2005062662A patent/JP2005353256A/ja active Pending
- 2005-04-26 US US11/114,894 patent/US7767322B2/en active Active
- 2005-05-12 KR KR1020050039791A patent/KR100819410B1/ko not_active IP Right Cessation
- 2005-05-13 CN CNB2005100702698A patent/CN100440325C/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101258542B (zh) * | 2005-12-26 | 2012-01-25 | 昭和电工株式会社 | 磁记录介质以及磁记录和再现装置 |
US7799446B2 (en) | 2007-02-20 | 2010-09-21 | Showa Denko K.K. | Perpendicular magnetic recording medium and manufacturing method thereof, magnetic recording apparatus |
CN104952463A (zh) * | 2014-03-31 | 2015-09-30 | 索尼公司 | 磁记录介质 |
CN105321536A (zh) * | 2014-07-30 | 2016-02-10 | 株式会社东芝 | 磁记录介质及磁记录再现装置 |
TWI823129B (zh) * | 2020-09-03 | 2023-11-21 | 日商Jx金屬股份有限公司 | 濺射靶及其製造方法,以及磁性記錄介質的製造方法 |
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US7767322B2 (en) | 2010-08-03 |
US20050255337A1 (en) | 2005-11-17 |
KR100819410B1 (ko) | 2008-04-07 |
JP2005353256A (ja) | 2005-12-22 |
CN100440325C (zh) | 2008-12-03 |
KR20060047822A (ko) | 2006-05-18 |
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