CN1706043A - Ac下工作的led光引擎及其制作方法 - Google Patents
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Abstract
本发明提供了一种包含LED有源元件对的光引擎,所述LED有源元件对安装在具有第一和第二端的公用端板上。第一端连接到第一LED有源元件的阴极和第二LED有源元件的阳极,而第二端连接到第一LED有源元件的阳极和第二LED有源元件的阴极,从而以反并联的方式连接所述LED。本发明还提供了一种光引擎,该光引擎含有单个绝缘或半绝缘衬底,并在所述衬底上形成多个LED有源元件,且分别为各个LED有源元件提供了形成阴极和阳极接触的关联的p型和n型接触。该LED有源元件可以以倒装结构安装在具有多个引线的端板上。该端板可包含一对引线,使得可以在该端板上倒装地安装两个LED,并且第一LED的阳极和第二LED的阴极接触一个引线,而第一LED的阴极和第二LED的阳极接触另一个引线。此外,该端板可以调整为允许在衬底上安装多个有源元件。
Description
技术领域
本发明涉及微电子器件及其制作方法,特别涉及发光二极管(LED)及其制作方法。
背景技术
发光二极管广泛用于消费者及商业应用。本领域技术人员所熟知的是,发光二极管通常包含微电子衬底上的二极管区域。微电子衬底包含例如硅、砷化镓、磷化镓及其合金、碳化硅与/或蓝宝石。LED的连续发展已经形成高效率、机械稳固的光源,该光源覆盖可见光谱以及可见光谱以外的光谱。这些属性,再加上固态器件潜在的使用寿命长、运行成本低、发热少、效率高以及其它益处,使固态光源有许多新的显示应用,并将LED置于可与已经广泛应用的白炽灯和荧光灯相竞争的地位。
在某些应用中,固态照明已经开始代替传统的白炽照明。最显著的是,美国及国外的许多城市已经开始用固态光引擎替代传统的白炽交通信号灯。尽管初期安装成本相对高,但与传统的白炽灯泡相比,LED基交通信号灯通常具有相当长的工作寿命以及相当低的每流明成本。
对于固态光源向传统白炽灯与荧光灯市场的渗入,向基于LED的交通信号灯(尤其是红色灯)的转移是很自然的开始。在过去的十年里,已经可以在市场上以合理的价格获得高亮度的红色与黄色LED,并于最近可获得高亮度的绿色LED。近来,固态白色光引擎已经作为仪表盘、开关及LCD显示的背光源,在汽车与移动电话行业中得到应用。尽管该技术仍然处于初期阶段,现在已经可以在商业上获得固态白光LED。固态白光LED的制作方式有许多种。目前,固态白色光源的生产技术通常为如下三种类型之一:混色、波长转换、以及结合混色和波长转换两个方面的混合方法。
混色涉及由光源组合而合成白光,这些光源发射组合可产生白光的互补色(例如,红色、绿色、蓝色LED,或者蓝色与黄色LED)。可以在例如美国专利No.6,132,072及其中所引用的参考文献中找到混色的例子。波长转换是指,使用第一波长的光作为激发信号以引起第二波长的光的发射(通常使用磷光或荧光材料)。例如,可以使用UV光源激发可发射红光、绿光与蓝光的磷光物质。磷光物质的最终光输出为该三个颜色的组合,如果这三个颜色被适当地平衡则呈现白光。见例如美国专利No.6,084,250。
采用被看作是混合了混色和波长转换的方法也可以产生白光。例如,可以在蓝光LED上涂敷磷光物质而制成白光发射器,该磷光物质受蓝光激发时发射黄光。LED发射的蓝光和磷光物质的受激发产生的黄光发射的组合产生白光。可以在美国专利No.5,998,925、6,066,681与6,013,199中发现用于白光转换的磷光物质的例子,这些专利在此被引用作为参考。制作固态白光光源的其它方法是可能的。
尽管可以获得固态白色光源,白光照明应用市场(即住宅与办公室照明)的绝大部分相对尚未开发。这种情况的部分原因为,LED通常与现有配电网络不直接兼容。
现有配电网络以交流(AC)的形式向住宅和企业提供高电压(110V或220V)低电流的电力。“AC”是指所提供电流的极性(即方向)在每个周期交变。对于标准的60Hz电源,这意味着电流的极性每秒变化120次。
相反地,LED为低电压、高电流器件,且由于其本性,LED仅允许电流沿一个方向流过,所以LED被认为是直流(DC)器件。因此,能够向基于LED的照明***供电的有效的配电或变压***,对于实现向传统白光照明市场的渗入是有益的。实际上,固态白光照明的草案技术路线图表明,为了实现高的市场渗入,以95%的效率把100伏特(AC)转换为2至5伏特(DC)的电源和驱动电子电路应该是固态照明行业的目标。见J.Tsao编辑的“Light Emitting Diodes for GeneralIllumination II”(2002年7月26日,终稿)。
为了设计能够使用AC电源从LED发射光的***,已经进行一些尝试。例如,美国专利No.5,936,599公开了用于交通信号显示的AC供电LED阵列电路,此外还有用于类似应用的许多现有技术。特别地,专利’599描述了具有多个LED对的电路,其中LED对以反并联的方式连接使得在一个AC周期的两个半周期内都允许电流流过。以反并联结构连接LED是众所周知的。然而,这种结构中封装的LED的连接通常要消耗过量的空间。此外,***设计者需要设计光源内的复杂互连,以使用现有LED技术实现该设计。需要一种更灵活的、用于设计在AC下工作的固态光源的方法。
发明内容
本发明的实施方案提供了一种包含LED有源元件对的光引擎,该元件安装在具有第一和第二端的公共端板(header)上。第一端连接到第一LED有源元件的阴极和第二LED有源元件的阳极,而第二端连接到第一LED有源元件的阳极和第二LED有源元件的阴极。LED有源元件可以提供在公共衬底、单独的衬底、与/或公共衬底和单独衬底的组合上。
本发明的其它实施方案提供了包含单个绝缘或半绝缘衬底的光引擎,在所述衬底上形成多个LED有源元件,并且对于每一个LED有源元件相关联的p型与n型接触分别形成阴极和阳极。该器件可以安装成倒装结构以提高光输出并可消除对引线接合的需要。
在本发明的其它实施方案中,采用了含有引线对的端板,使得可以在该端板上倒装地安装至少两个LED有源元件,并且第一LED有源元件的阳极和第二LED有源元件的阴极接触一个引线,而第一LED有源元件的阴极和第二LED有源元件的阳极接触另一个引线。此外,该端板允许在其上安装具有多个有源元件的衬底。
本发明的另一些实施方案提供了具有成形的或具有某种结构的特征以提高光提取效率,并具有磷光物质涂层以进行波长转换。
本发明另外的实施方案提供了这里所描述的LED光引擎的制作方法。
附图说明
图1为本发明的特定实施方案的侧视图。
图2A为图1所示实施方案的等效电路。
图2B与2C分别为可以结合本发明的特定实施方案使用的LED的侧视图和俯视图。
图3为根据本发明的实施方案的示例端板的俯视图。
图4为根据本发明的实施方案的示例端板的俯视图,该端板包含安装在其上的一对LED。
图5为本发明的另外的实施方案的侧视图。
图6为根据本发明的实施方案的示例端板的俯视图,该端板包含安装在其上的图5所示的器件。
图7为本发明的另外的实施方案的侧视图。
图8为根据本发明的实施方案的示例端板的俯视图,该端板包含安装在其上的含有四个有源元件的LED器件。
图9为图8所示实施方案的等效电路。
图10为图11所示实施方案的等效电路。
图11为根据本发明的实施方案的示例端板的局部示意性俯视图,该端板包含安装在其上的含有十二个有源元件的LED器件。
具体实施方式
现在参照附图,在下文中对本发明进行更充分的描述,其中示出了本发明的实施方案。不应该把本发明理解成限于这里描述的实施方案;相反,提供这些实施方案是为了使本公开变得彻底和完整,并向本领域的技术人员充分传达本发明的范围。在所有附图中,相同的数字表示相同的元件。此外,图中所示的各种层和区域是示意性示出的。本领域的技术人员也将了解到,尽管本发明是结合半导体晶片和已切割的芯片进行描述,但这些芯片可以切割成任意尺寸。因此,本发明不限于附图中所示的相对尺寸和间距。此外,为了使绘制清晰且容易解释,以夸大的尺寸示出附图的某些特征。
现在将描述本发明的实施方案,通常是参照碳化硅基衬底上的氮化镓基发光二极管。然而,本领域的技术人员将明白,本发明的许多实施方案可以采用许多不同的衬底和外延层的组合。例如,这些组合包含:GaP衬底上的AlGaInP二极管、GaAs衬底上的InGaAs二极管、GaAs衬底上的AlGaAs二极管、SiC或蓝宝石(Al2O3)衬底上的SiC二极管,与/或氮化镓、碳化硅、氮化铝、蓝宝石、氧化锌与/或其它衬底上的氮化物基二极管。
本发明的实施方案包含能使用AC电源有效地发射光的LED光引擎。在某些实施方案中,该光引擎包含一对LED,该LED对安装在具有第一端和第二端的端板上。第一端连接到第一LED的阴极和第二LED的阳极,而第二端连接到第一LED的阳极和第二LED的阴极。这些LED可以安装成外延层朝上的结构或者衬底朝上的(倒装)结构。
在其它实施方案中,光引擎包含单个衬底,该衬底含有至少两个LED有源元件,并且每个LED有源元件的关联p型与n型接触分别形成阴极和阳极。该器件可以安装成倒装结构以增加光输出并消除对引线接合的需要。
在本发明的另一些实施方案中,采用了具有一对引线的端板,使得两个LED(这两个LED可以相同)可以倒装安装,第一LED的阳极和第二LED的阴极接触一个引线,而第一LED的阴极和第二LED的阳极接触另一个引线。另外的实施方案允许在单个端板上连接或互连多于两个LED或LED有源元件。可以在端板上在该LED旁边安装外部电路元件,以实现更有效的和更灵活的***集成,所述外部电路元件为用于诸如提供ESD保护、功率转换、功率匹配或其它目的。
图1示出了本发明的特定实施方案,该图示出了端板或引线框20,LED1和2以倒装结构安装在该端板或引线框上,该倒装结构中衬底一侧远离端板并且外延区与端板相邻。
图2B与2C示出了示例的LED结构。如图2B所示,与本发明一起使用的示例LED包含衬底4,在该衬底上形成包含n型接触层5、有源区6与p型接触层7的外延区。术语“在...上”不是狭义地仅仅指直接的物理接触。相反,这里使用该术语时,一层可以在另一层上,虽然两层没有直接的物理接触。
衬底4包含任何前述衬底材料,但在特定的实施方案中该衬底包含6H-SiC。外延区包含氮化镓基半导体层。有源区6可包含同质结、单异质结、双异质结、或单量子阱或多量子阱结构。该器件可能也存在其它层(未示出)。在p型接触层7与n型接触层5上形成欧姆接触12、14,以分别形成阳极和阴极电接触。图2C为图2B的示例LED芯片的俯视图,该图示出了阳极接触12与阴极接触14的一种可能结构。在本领域中,氮化镓基LED的外延层和欧姆接触的设计与制作是公知的。例如,本发明的实施方案适合与下述美国专利中描述的LED和/或激光器一起使用:No.6,201,262、6,187,606、6,120,600、5,912,477、5,739,554、5,631,190、5,604,135、5,523,589、5,416,342、5,393,993、5,338,944、5,210,051、5,027,168、5,027,168、4,966,862和/或4,918,497,这些专利公开在此结合作为参考,如同在此阐述了其原文一样。下述专利中描述了其它适合的LED和/或激光器:均于2001年5月30日提出申请的,标题为“LIGHTEMITTING DIDODESTRUCTURE WITH MULTI-QUANTUM WELL ANDSUPERLATTICE STRUCTURE”的美国临时专利申请No.60,294,378、标题为“MULTI-QUANTUM LIGHT EMITTING DIODES STRUCTURE”的美国临时专利申请No.60/294,445、以及标题为“LIGHT EMITTING DIDODESTRUCTURE WITH SUPERLATTICE STRUCTURE”的美国临时专利申请No.60,294,308;2002年5月7日提出申请的、标题为“GROUP IIINITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELLAND SUPERLATTICE,GROUP III NITRIDE BASED QUANTUM WELLSTRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES”的美国临时专利申请No.10/140,796;以及2001年7月23日提出申请的、标题为“LIGHT EMITTING DIODES INCLUDING SUBSTRATEMODIFICATIONS FOR LIGHT EXTRACTION AND MANFACTURING METHODSTHEREFOR”的美国临时专利申请No.10/057,82,以及2002年1月25日提出申请的、标题为“LIGHT EMITTING DIODES INCLUDING SUBSTRATEMODIFICATIONS FOR LIGHT EXTRACTION AND MANUFACTURING METHODSTHEREFOR”的美国临时专利申请No.10/057,82,这些专利公开在此结合作为参考,如同在此阐述了其原文一样。此外,覆盖磷光物质的LED,诸如标题为“PHOSPHOR-COATED LIGHT EMITTING DIODES INCLUDINGTAPERED SIDEWALLS,AND FABRICATION METHODS THEREFOR”的美国临时专利申请No.___(律师案卷号No.5308-245PR)中所描述的,也适用于本发明的实施方案。
回到图1,端板20包含导电引线24、26与28,引线24与28互相电连接。安装LED 1,使得其阴极12A与引线24电接触,而其阳极14A与引线26电接触。安装LED 2,使得其阴极12B与引线26电接触,而其阳极14B与引线28电接触。由于引线28与引线24电接触,所以LED 1的阴极与LED 2的阳极电接触。引线24充当图2A所示的公用节点N1,而引线26充当节点N2。这里所使用的“电接触”意味着允许电流流动的直接接触,或者通过本身导电的***元件的非直接接触。
通过焊接或热声键合(thermosonic bonding)把LED 1与2连接到引线24、26与28,下述专利阐述了这样的例子:2002年6月27日申请的、标题为“Bonding of Light Emitting Diodes Having ShapedSubstrates and Collets Bonding of Light Emitting Diodes HavingShaped Substrates”的美国专利申请No.10/185,350,2002年6月27日申请的、标题为“Flip-Chip Bonding of Light Emitting Devicesand Light Emitting Devices Suitable for Flip-Chip Bonding”的美国专利申请No.10/185,252,和/或2002年7月22日申请的、标题为“Light Emitting Diodes Including Modifications for SubmountBonding and Manufacturing Methods Therefor”的美国专利申请No.10/200,244,其中每一个的全文在此引用作为参考,如同在此阐述了其原文一样。由于在本实施方案中LED 1与2的阴极和阳极接触位于芯片的同一侧,因此它们可以在导电衬底与/或诸如半绝缘SiC或蓝宝石的绝缘或半绝缘衬底上构造。
图2A示出了由这两个LED形成的电路的示意图,该图示出了以反并联方式连接的两个LED。LED 1的阴极与LED 2的阳极一起连接到节点A。类似地,LED 2的阴极与LED 1的阳极一起连接到节点B。当在节点N1与N2之间施加AC电压时,将在AC波形的交变的半周期内使LED 1与2通电。
由于LED具有非零的余辉,如果振荡频率足够高,那么观察者看上去两个LED似乎同时“开启”。这里所使用的LED的“余辉”是指,LED上的驱动电压撤除或反向之后LED看上去继续发光的时间量。
如图3所示,端板20具有一对引线,使得两个LED(这两个LED可以相同)都被倒装,第一LED的阳极和第二LED的阴极接触一个引线,而第一LED的阴极和第二LED的阳极接触另一个引线。因此,第一接触24与第二接触26提供了叉指或联锁(interlocking)的接触,各个接触与LED 1接触端板20的区域以及LED 2接触端板20的区域重叠,使得单个接触区域可以紧凑地接触LED 1与LED 2。突出A与B用于把该器件键合或电连接到外部电路。
此外,可以在端板上在LED旁边安装外部电路元件(未示出)并将其电连接到引线以实现更有效的和更灵活的***集成,所述外部电路元件用于诸如提供ESD保护、功率转换、功率匹配或其它目的。该电路元件可以包含诸如电阻器、电感器与电容器的无源元件,或者包含诸如晶体管的有源元件。
图4为安装在图3所示的端板上的一对LED 1与2的俯视图。图4分别示出了阴极14A、14B与引线24、26之间的连接。
图5示出了本发明的另外的实施方案。在图5所示的实施方案中,在单个衬底15上制作具有多个有源元件31与32的LED 3。衬底15可以为半绝缘或绝缘的,以防止器件的阴极短路。元件31与32均包含n型接触层5、有源区6与p型接触层7、以及分别与p型接触层7、n型接触层5接触的欧姆接触12、14。图6示出了安装在端板20上的器件3的俯视图。
在图5与图6所示的实施方案中,可以如下制作器件3:在衬底15上沉积适当的外延层、使用刻蚀掩膜图形化该层、并且刻蚀该外延层的部分以在衬底15上将有源元件31与32形成为隔离的台面区域。可以使用其它的方法隔离衬底上的有源元件。随后可以按需要锯开或分开各个管芯。下述专利描述了关于可能的器件制作过程的更多细节:2002年1月28日申请的、标题为“CLUSTER PACKAGING OF LIGHTEMITTING DIODES”的美国专利申请No.10/058,369,与/或2002年7月26日申请的、标题为“Methods,Systems and Computer ProgramProducts for Controlling a Semiconductor Dicing Saw”(律师案卷号No.5308-260PR)的美国临时专利申请序号No.60/398,753,这些专利在此结合作为参考,如同在此描述其全文一样。
为了提高光输出,可以像2002年1月25日申请的、标题为“LightEmitting Diodes Including Substrate Modifications for LightExtraction and Manufactur ing Methods Therefor”的美国专利申请No.10/057,821所描述的,对衬底15进行成形,该专利被转让给本发明的受让人,该专利在此结合作为参考,如同在此描述了其全文一样。图7示出了一种可能的造型,其中衬底15设有多个倾斜的侧壁18和基座19,所述和基座的作用为增加到达衬底表面的特定光线逃逸的可能性。衬底的表面也可以被粗糙化、纹理化(textured)、或用微观光学特征图形化以提高光提取效率。
此外,衬底可以密封在磷光材料中或被覆盖磷光材料,以便于以上面概述的方式产生白色或其它颜色的光或提高LED的余辉。例如,如2001年10月31申请的、标题为“Broad Spectrum LED Devices andMethods,and System for Fabricating the Same”的美国临时专利申请No.60/335,349所描述的,衬底可以被覆盖磷光材料,该专利在此结合作为参考,如同在此描述了其全文一样。
在其它实施方案中,可以在单个衬底上形成多于两个有源元件,并且这些有源器件被互连并以上述参照图5与图6描述的方式形成预期结构。例如,图8为包含端板20的器件的俯视图,该端板上形成了接触A、B与C(交叉阴影线所示)。在端板20上安装含有包含四个有源元件36A、36B、37A与37B的衬底35的LED,使得元件37A的阴极和元件37B的阳极连接到接触A,元件37A和36B的阳极与元件36A与37B的阴极一起连接到接触C,元件37B的阳极和元件36B的阴极连接到接触B。图9中示出了这些特定实施方案的等效电路。如图9所示,该电路包含两对串联的LED,其中每对LED包含以反并联结构连接的两个LED。
可以容易地实现其它的结构。例如,图10示出了一个更加复杂的电路,该电路包含三个反并联的LED对的两个并联电路。由图11所示的结构可以实现这个电路,该结构包含端板20,端板20上的LED含有包含十二个有源元件41A至41F与42A至42F的衬底45。为了简化,端板20上的接触未明确示出,而用示意线46表示。
由于该LED上的有源元件的互连是通过端板20上的接触设计实现的,因此仅通过改变端板20上接触的设计与布局,就可以容易地实现许多种结构。这为***设计者在设计光引擎的电学特性以匹配预期应用时提供了灵活性。
参照图5,可以理解根据本发明的方法。根据本发明的发光器件的制作方法包含:提供半绝缘或绝缘衬底15;在衬底上形成外延区25,其中该外延区至少包含衬底15上的n型接触层5、n型接触层5上的有源区6、以及有源区6上的p型接触层7。第一刻蚀掩膜被应用到外延区25,外延区25被选择性地刻蚀以暴露n型接触层5上的多个接触区。多个有源元件31、32在外延区25内被隔离,使得每个有源元件包含n型接触层5的至少一个被暴露的接触区27。可以通过第二刻蚀步骤或通过本领域内已知的其它隔离技术进行该隔离。在有源元件31、32每一个中的p型接触层7与n型接触层5上形成阳极12与阴极14欧姆接触。
尽管图5所示的器件只含有两个有源元件31、32,但是可以把上述方法延伸至制作具有更多数目有源元件的器件,诸如图11所示的器件。
在端板20上安装其上形成了多个有源元件31、32的器件3,如前所述,端板20具有导电引线,使得该多个有源元件的阳极与阴极欧姆接触与至少一个引线电接触。此外,可以对衬底15进行成形,从而如前所述地改善光提取。衬底15可以被覆盖波长转换材料,从而以如前所述的方式产生白色或其它颜色的光,或者整个器件可以用含有波长转换材料的材料进行密封。
在附图和说明书中已经公开本发明的实施方案,尽管采用了特定的术语,但是这些特定术语的使用仅仅为概述性和描述性的,而非用于限制本发明。
Claims (33)
1.一种电子器件,包括:
端板;
第一与第二LED,分别包含衬底、外延区、阳极与阴极电接触,该第一与第二LED以倒装结构安装在该端板上;以及
其中该端板配置成以反并联排列方式电连接第一和第二LED。
2.权利要求1所叙述的电子器件,进一步包含:
形成在端板上的第一和第二导电引线;以及
其中第一LED的阳极和第二LED的阴极与第一导电引线电接触,并且第一LED的阴极和第二LED的阳极与第二导电引线电接触。
3.权利要求2所叙述的电子器件,其中第一与第二LED被热声键合到导电引线。
4.权利要求2所叙述的电子器件,其中所述第一与第二LED被焊接到导电引线。
5.权利要求2所叙述的电子器件,其中第一LED的衬底与第二LED的衬底包含6H-SiC。
6.权利要求2所叙述的电子器件,其中所述第一LED的衬底与第二LED的衬底包含绝缘材料或半绝缘材料中的一种。
7.权利要求2所叙述的电子器件,进一步包含至少一个电路元件,该电路元件放置在该端板上并且电连接第一导电引线与/或第二导电引线中的至少一个。
8.权利要求2所叙述的电子器件,其中第一LED的衬底与/或第二LED的衬底被成形以增强提取光。
9.权利要求2所叙述的电子器件,其中第一LED的衬底与/或第二LED的衬底被覆盖了波长转换材料。
10.权利要求9所叙述的电子器件,其中波长转换材料包含磷光物质。
11.一种电子器件,包含:
端板,其上形成第一和第二导电引线;
LED,包含衬底和该衬底上的第一与第二有源元件,其中第一和第二有源元件中的每一个分别包含外延区、阳极与阴极电接触,该LED以倒装结构安装在端板上以便接触第一和第二导电引线,以便以反并联排列方式电连接第一和第二有源元件。
12.权利要求11所叙述的电子器件,其中该LED被热声键合到导电引线。
13.权利要求11所叙述的电子器件,其中该LED被焊接到所述导电引线。
14.权利要求11所叙述的电子器件,其中衬底包含6H-SiC。
15.权利要求11所叙述的电子器件,其中衬底包含绝缘或半绝缘材料中的一种。
16.权利要求11所叙述的电子器件,进一步包含至少一个电路元件,该电路元件放置在该端板上并且电连接到第一导电引线与/或第二导电引线中的至少一个。
17.权利要求11所叙述的电子器件,其中衬底被成形以增强光提取。
18.权利要求11所叙述的电子器件,其中衬底被覆盖波长转换材料。
19.权利要求18所叙述的电子器件,其中波长转换材料包含磷光物质。
20.一种发光器件的制作方法,包含:
提供半绝缘或绝缘衬底;
在衬底上形成外延区,该外延区至少包含衬底上的n型接触层、n型接触层上的有源区、以及有源区上的p型接触层;
选择性地刻蚀外延区以暴露出n型接触层的多个接触区域;
隔离外延区内的多个有源元件,这些有源元件中的每一个包含n型接触层的至少一个被暴露的接触区域;以及
在每个有源元件上形成阳极和阴极欧姆接触。
21.权利要求20的方法,其中多个有源元件的隔离包含在外延区内刻蚀多个台面以限定被隔离的有源元件。
22.权利要求20的方法,进一步包含:
在端板上以倒装结构安装该器件,该端板包含多个导电引线,其中每个有源元件的阳极和阴极中的每一个接触与该多个导电引线中的每一个的至少一个电接触。
23.权利要求20的方法,进一步包含成形该衬底以改善光提取。
24.权利要求20的方法,进一步包含用波长转换材料涂敷衬底。
25.权利要求20的方法,进一步包含用包含波长转换材料的密封剂密封该器件。
26.权利要求25的方法,其中波长转换材料包含磷光物质。
27.权利要求24的方法,其中波长转换材料包含磷光物质。
28.一种电子器件,包含:
端板;
以倒装结构安装在该端板上的多个LED有源元件;以及
其中该端板被配置成以反并联的方式电连接该多个有源元件中的各对。
29.权利要求27的电子器件,其中该多个LED有源元件包含以倒装结构安装在端板上的LED,该LED包含衬底和衬底上的多个有源元件,其中该多个有源元件中的每一个分别包含外延区、以及阳极和阴极电接触。
30.权利要求27的电子器件,其中多个LED有源元件包含多个分立LED,该多个分立LED中的每一个以倒装结构安装在端板上。
31.权利要求28的电子器件,其中端板被进一步配置成串联地电连接多个有源元件的多对,所述有源元件对以反并联方式连接。
32.权利要求30的电子器件,其中端板被进一步配置成并联地电连接被串联地电连接的多个有源元件的多对,所述有源元件对以反并联方式连接。
33.权利要求28的电子器件,其中端板包含导电引线,该导电引线被设置成接触多个有源元件中的相邻的那些,使得至少两个导电引线被设置在多个有源元件中的每一个和端板的衬底之间。
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EP (1) | EP1554755A2 (zh) |
JP (1) | JP2006504265A (zh) |
KR (1) | KR20050074491A (zh) |
CN (1) | CN1706043A (zh) |
AU (1) | AU2003277253A1 (zh) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101846245A (zh) * | 2007-11-05 | 2010-09-29 | 恩纳特隆公司 | 光源和控制发光二极管光引擎光谱的方法 |
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US8066909B2 (en) | 2004-06-10 | 2011-11-29 | Seoul Semiconductor Co., Ltd. | Light emitting device |
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US8188492B2 (en) | 2006-08-29 | 2012-05-29 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US8431954B2 (en) | 2007-08-28 | 2013-04-30 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
US8501040B2 (en) | 2007-08-22 | 2013-08-06 | Seoul Semiconductor Co., Ltd. | Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
CN101645441B (zh) * | 2009-05-06 | 2014-10-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具单胞失效自防护功能的多胞连接大功率光电器件 |
CN104521012A (zh) * | 2012-08-07 | 2015-04-15 | 首尔伟傲世有限公司 | 晶圆级发光二极管阵列及其制造方法 |
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CN110136636A (zh) * | 2018-02-08 | 2019-08-16 | 三星显示有限公司 | 显示装置 |
Families Citing this family (264)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60336252D1 (de) * | 2002-08-29 | 2011-04-14 | Seoul Semiconductor Co Ltd | Lichtemittierendes bauelement mit lichtemittierenden dioden |
TW565957B (en) * | 2002-12-13 | 2003-12-11 | Ind Tech Res Inst | Light-emitting diode and the manufacturing method thereof |
EP1597777B1 (en) | 2003-02-26 | 2013-04-24 | Cree, Inc. | Composite white light source and method for fabricating |
US20040206970A1 (en) * | 2003-04-16 | 2004-10-21 | Martin Paul S. | Alternating current light emitting device |
EP2270887B1 (en) * | 2003-04-30 | 2020-01-22 | Cree, Inc. | High powered light emitter packages with compact optics |
US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US8999736B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
JP2005228924A (ja) * | 2004-02-13 | 2005-08-25 | Toshiba Corp | 半導体発光素子 |
WO2010138211A1 (en) | 2009-05-28 | 2010-12-02 | Lynk Labs, Inc. | Multi-voltage and multi-brightness led lighting devices and methods of using same |
US7114841B2 (en) * | 2004-03-22 | 2006-10-03 | Gelcore Llc | Parallel/series LED strip |
KR101197991B1 (ko) * | 2004-06-30 | 2013-01-18 | 오스람 옵토 세미컨덕터스 게엠베하 | 발광 다이오드 장치, 광 기록 장치 및 적어도 하나의 발광다이오드의 펄스식 구동 방법 |
DE102004031689A1 (de) * | 2004-06-30 | 2006-02-16 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
TW200501464A (en) * | 2004-08-31 | 2005-01-01 | Ind Tech Res Inst | LED chip structure with AC loop |
US7534510B2 (en) | 2004-09-03 | 2009-05-19 | The Gillette Company | Fuel compositions |
US20060113810A1 (en) * | 2004-11-30 | 2006-06-01 | Sidler Inc. | Modular overhead console assembly for a vehicle |
WO2006061728A2 (en) * | 2004-12-06 | 2006-06-15 | Koninklijke Philips Electronics N.V. | Single chip led as compact color variable light source |
DE112005003841B4 (de) * | 2004-12-14 | 2016-03-03 | Seoul Viosys Co., Ltd. | Licht emittierendes Bauelement mit einer Mehrzahl Licht emittierender Zellen |
KR101138945B1 (ko) * | 2005-01-29 | 2012-04-25 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 탑재한패키지 |
KR20060084315A (ko) * | 2005-01-19 | 2006-07-24 | 삼성전기주식회사 | Led 어레이 회로 |
US7707603B2 (en) * | 2005-01-28 | 2010-04-27 | Microsoft Corporation | Digital media transfer based on user behavior |
DE102005009060A1 (de) | 2005-02-28 | 2006-09-07 | Osram Opto Semiconductors Gmbh | Modul mit strahlungsemittierenden Halbleiterkörpern |
US7957780B2 (en) | 2005-03-01 | 2011-06-07 | Masimo Laboratories, Inc. | Physiological parameter confidence measure |
EP1864339A4 (en) | 2005-03-11 | 2010-12-29 | Seoul Semiconductor Co Ltd | LIGHT-EMITTING DIODE DIODE WITH PHOTO-EMITTING CELL MATRIX |
US7474681B2 (en) * | 2005-05-13 | 2009-01-06 | Industrial Technology Research Institute | Alternating current light-emitting device |
EP2161752B1 (en) | 2005-06-22 | 2015-08-12 | Seoul Viosys Co., Ltd | Light-emitting device |
KR100646635B1 (ko) * | 2005-06-24 | 2006-11-23 | 서울옵토디바이스주식회사 | 복수 셀의 단일 발광 소자 및 이의 제조 방법 |
KR100746952B1 (ko) * | 2005-12-21 | 2007-08-07 | 서울옵토디바이스주식회사 | 지연형광체를 구비하는 교류용 발광소자 |
KR100712891B1 (ko) * | 2005-12-21 | 2007-05-02 | 서울옵토디바이스주식회사 | 복수개의 발광셀 어레이들을 구비하는 교류용 발광다이오드 및 발광 소자 |
CN101795510A (zh) * | 2005-06-28 | 2010-08-04 | 首尔Opto仪器股份有限公司 | 发光装置 |
US8896216B2 (en) | 2005-06-28 | 2014-11-25 | Seoul Viosys Co., Ltd. | Illumination system |
US20070015300A1 (en) * | 2005-07-15 | 2007-01-18 | Yu-Chuan Liu | Method for fabricating a light-emitting device |
TWI257185B (en) * | 2005-08-02 | 2006-06-21 | Formosa Epitaxy Inc | Light emitting diode element and driving method thereof |
KR100616415B1 (ko) * | 2005-08-08 | 2006-08-29 | 서울옵토디바이스주식회사 | 교류형 발광소자 |
US8901575B2 (en) * | 2005-08-09 | 2014-12-02 | Seoul Viosys Co., Ltd. | AC light emitting diode and method for fabricating the same |
KR100690321B1 (ko) * | 2005-08-09 | 2007-03-09 | 서울옵토디바이스주식회사 | 발광셀 어레이들을 갖는 발광 다이오드 및 그것을 제조하는방법 |
JP4813162B2 (ja) * | 2005-12-02 | 2011-11-09 | ローム株式会社 | 半導体発光素子 |
US7948770B2 (en) * | 2005-12-09 | 2011-05-24 | Industrial Technology Research Institute | AC—LED system in single chip with three metal contacts |
CN101351891B (zh) * | 2005-12-22 | 2014-11-19 | 科锐公司 | 照明装置 |
JP2007173549A (ja) * | 2005-12-22 | 2007-07-05 | Rohm Co Ltd | 発光装置 |
TW200739952A (en) * | 2005-12-22 | 2007-10-16 | Rohm Co Ltd | Light emitting device and illumination instrument |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
US8222116B2 (en) * | 2006-03-03 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7821194B2 (en) * | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
US8998444B2 (en) * | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
JP2007335462A (ja) * | 2006-06-12 | 2007-12-27 | Stanley Electric Co Ltd | 半導体複合素子およびその製造方法 |
KR100924222B1 (ko) * | 2006-06-29 | 2009-11-02 | 엘지디스플레이 주식회사 | 정전기 방전 회로 및 이를 구비한 액정표시장치 |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US8350279B2 (en) * | 2006-09-25 | 2013-01-08 | Seoul Opto Device Co., Ltd. | Light emitting diode having AlInGaP active layer and method of fabricating the same |
US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
US20090275157A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
US8265723B1 (en) | 2006-10-12 | 2012-09-11 | Cercacor Laboratories, Inc. | Oximeter probe off indicator defining probe off space |
KR100803162B1 (ko) * | 2006-11-20 | 2008-02-14 | 서울옵토디바이스주식회사 | 교류용 발광소자 |
US8338836B2 (en) | 2006-11-21 | 2012-12-25 | Seoul Opto Device Co., Ltd. | Light emitting device for AC operation |
KR101158079B1 (ko) * | 2006-12-22 | 2012-07-20 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광소자 |
JP2010517274A (ja) * | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法 |
TW200837943A (en) * | 2007-01-22 | 2008-09-16 | Led Lighting Fixtures Inc | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
US20080198572A1 (en) | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
WO2008111693A1 (en) | 2007-03-13 | 2008-09-18 | Seoul Opto Device Co., Ltd. | Ac light emitting diode |
US20080231204A1 (en) * | 2007-03-19 | 2008-09-25 | Praiswater Michael R | Light emitting diode assembly replacement for fluorescent lamp |
KR100856230B1 (ko) * | 2007-03-21 | 2008-09-03 | 삼성전기주식회사 | 발광장치, 발광장치의 제조방법 및 모놀리식 발광다이오드어레이 |
US8374665B2 (en) | 2007-04-21 | 2013-02-12 | Cercacor Laboratories, Inc. | Tissue profile wellness monitor |
US20080258130A1 (en) * | 2007-04-23 | 2008-10-23 | Bergmann Michael J | Beveled LED Chip with Transparent Substrate |
CN201063971Y (zh) * | 2007-05-18 | 2008-05-21 | 黄虎钧 | 高效散热电路板 |
US8227999B2 (en) * | 2007-06-04 | 2012-07-24 | Koninklijke Philips Electronics N.V. | Light output device |
JP4811669B2 (ja) * | 2007-06-22 | 2011-11-09 | 日本精機株式会社 | プリント配線板 |
US20090039375A1 (en) * | 2007-08-07 | 2009-02-12 | Cree, Inc. | Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
KR20090015734A (ko) | 2007-08-09 | 2009-02-12 | 엘지이노텍 주식회사 | 광원 장치 |
KR100889956B1 (ko) * | 2007-09-27 | 2009-03-20 | 서울옵토디바이스주식회사 | 교류용 발광다이오드 |
US10986714B2 (en) | 2007-10-06 | 2021-04-20 | Lynk Labs, Inc. | Lighting system having two or more LED packages having a specified separation distance |
US11297705B2 (en) | 2007-10-06 | 2022-04-05 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
CN101836297A (zh) * | 2007-10-26 | 2010-09-15 | 科锐Led照明科技公司 | 具有一个或多个发光荧光体的照明装置及其制造方法 |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
TW200945570A (en) * | 2008-04-18 | 2009-11-01 | Top Crystal Technology Inc | High-voltage LED circuit with multi-staged threshold voltage and diode light-emitting device thereof |
US7832896B2 (en) | 2008-04-18 | 2010-11-16 | Lumination Llc | LED light engine |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8871024B2 (en) * | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
WO2010065163A2 (en) * | 2008-06-05 | 2010-06-10 | Soraa, Inc. | Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan |
US20090301388A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
US20090309127A1 (en) * | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
US8847249B2 (en) * | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US20090320745A1 (en) * | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
US20100006873A1 (en) * | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
KR100956224B1 (ko) * | 2008-06-30 | 2010-05-04 | 삼성엘이디 주식회사 | Led 구동회로 및 led 어레이 장치 |
US20100003492A1 (en) * | 2008-07-07 | 2010-01-07 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US8143148B1 (en) | 2008-07-14 | 2012-03-27 | Soraa, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
JP2011530194A (ja) | 2008-08-04 | 2011-12-15 | ソラア インコーポレーテッド | 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
US8430958B2 (en) | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8979999B2 (en) | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8323405B2 (en) | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US20100031873A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Basket process and apparatus for crystalline gallium-containing nitride |
US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
JP2010103522A (ja) | 2008-10-21 | 2010-05-06 | Seoul Opto Devices Co Ltd | 遅延蛍光体を備える交流駆動型の発光素子及び発光素子モジュール |
TWI370563B (en) * | 2008-10-27 | 2012-08-11 | Epistar Corp | Vertical ac led |
US8963175B2 (en) * | 2008-11-06 | 2015-02-24 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device and method of manufacturing the same |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
US20100147210A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | high pressure apparatus and method for nitride crystal growth |
US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
JP4724222B2 (ja) | 2008-12-12 | 2011-07-13 | 株式会社東芝 | 発光装置の製造方法 |
US20110100291A1 (en) * | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US8333631B2 (en) * | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
WO2010097751A2 (en) * | 2009-02-25 | 2010-09-02 | Philips Intellectual Property & Standards Gmbh | Output power stabilization for laser diodes using the photon-cooling dependent laser voltage |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US9531164B2 (en) * | 2009-04-13 | 2016-12-27 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US8921876B2 (en) * | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
TWI591845B (zh) * | 2009-07-21 | 2017-07-11 | 晶元光電股份有限公司 | 光電系統 |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US20110056429A1 (en) * | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8355418B2 (en) * | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
KR101368906B1 (ko) | 2009-09-18 | 2014-02-28 | 소라, 인코포레이티드 | 전력 발광 다이오드 및 전류 밀도 작동 방법 |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
CN102630288B (zh) | 2009-09-25 | 2015-09-09 | 科锐公司 | 具有低眩光和高亮度级均匀性的照明设备 |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
TW201114068A (en) * | 2009-10-09 | 2011-04-16 | Formosa Epitaxy Inc | AC type light-emitting element |
US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
JP5349260B2 (ja) * | 2009-11-19 | 2013-11-20 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
US9839381B1 (en) | 2009-11-24 | 2017-12-12 | Cercacor Laboratories, Inc. | Physiological measurement system with automatic wavelength adjustment |
US8801613B2 (en) | 2009-12-04 | 2014-08-12 | Masimo Corporation | Calibration for multi-stage physiological monitors |
TWI420712B (zh) * | 2009-12-09 | 2013-12-21 | Epistar Corp | 發光二極體結構及其封裝元件 |
US20110182056A1 (en) * | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US20110186874A1 (en) * | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
JP2011249411A (ja) * | 2010-05-24 | 2011-12-08 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置、照明装置、表示装置、信号灯器及び道路情報装置 |
US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US8293551B2 (en) | 2010-06-18 | 2012-10-23 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
CN102340904B (zh) | 2010-07-14 | 2015-06-17 | 通用电气公司 | 发光二极管驱动装置及其驱动方法 |
DE102010032813A1 (de) | 2010-07-30 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
JP5440438B2 (ja) * | 2010-08-04 | 2014-03-12 | 三菱電機株式会社 | パワーモジュール |
KR101142539B1 (ko) * | 2010-08-18 | 2012-05-08 | 한국전기연구원 | 역방향 직렬접속된 발광셀 어레이가 구비된 교류용 발광다이오드 칩 구조 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
TWI472058B (zh) * | 2010-10-13 | 2015-02-01 | Interlight Optotech Corp | 發光二極體裝置 |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US9666764B2 (en) | 2012-04-09 | 2017-05-30 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die |
US9653643B2 (en) | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
TW201301570A (zh) * | 2011-06-28 | 2013-01-01 | Aceplux Optotech Inc | 多光色發光二極體及其製作方法 |
KR101221641B1 (ko) * | 2011-08-19 | 2013-02-05 | 서울옵토디바이스주식회사 | 복수의 셀이 어레이된 교류용 발광 소자 |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
US20120087130A1 (en) * | 2011-11-20 | 2012-04-12 | Foxsemicon Integrated Technology, Inc. | Alternating current led illumination apparatus |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
KR101877384B1 (ko) * | 2011-12-05 | 2018-07-11 | 엘지이노텍 주식회사 | 발광소자 |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
CN104247052B (zh) | 2012-03-06 | 2017-05-03 | 天空公司 | 具有减少导光效果的低折射率材料层的发光二极管 |
US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US8985794B1 (en) | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
US9088135B1 (en) | 2012-06-29 | 2015-07-21 | Soraa Laser Diode, Inc. | Narrow sized laser diode |
CN103545337A (zh) * | 2012-07-16 | 2014-01-29 | 江苏微浪电子科技有限公司 | 由倒装发光单元阵列组成的立体发光器件及其制造方法 |
US9318529B2 (en) | 2012-09-07 | 2016-04-19 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
US10804316B2 (en) * | 2012-08-07 | 2020-10-13 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
US10388690B2 (en) | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
US9184563B1 (en) | 2012-08-30 | 2015-11-10 | Soraa Laser Diode, Inc. | Laser diodes with an etched facet and surface treatment |
DE112013003887T5 (de) * | 2012-09-07 | 2015-05-07 | Seoul Viosys Co., Ltd. | Leuchtdiodenarray auf Wafer-Ebene |
WO2014060921A1 (en) * | 2012-10-15 | 2014-04-24 | Koninklijke Philips N.V. | Led package with capacitive couplings |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US9295854B2 (en) * | 2012-11-28 | 2016-03-29 | Point Source, Inc. | Light and bioelectric therapy pad |
US8803429B2 (en) * | 2012-12-03 | 2014-08-12 | Mei-Ling Peng | Structure of LED light color mixing circuit |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US8802471B1 (en) | 2012-12-21 | 2014-08-12 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
CN103943616B (zh) * | 2013-01-22 | 2017-04-12 | 浙江中宙照明科技有限公司 | 一种led发光装置 |
US20140209961A1 (en) * | 2013-01-30 | 2014-07-31 | Luxo-Led Co., Limited | Alternating current light emitting diode flip-chip |
US9626884B2 (en) | 2013-03-15 | 2017-04-18 | General Led, Inc. | LED light engine for signage |
US10217387B2 (en) | 2013-03-15 | 2019-02-26 | General Led Opco, Llc | LED light engine for signage |
US9464780B2 (en) | 2013-03-15 | 2016-10-11 | General Led, Inc. | LED light engine for signage |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
EP2830094B1 (en) * | 2013-07-22 | 2020-02-26 | LG Innotek Co., Ltd. | Light emitting device |
JP6328002B2 (ja) | 2013-09-20 | 2018-05-23 | 株式会社東芝 | 電力変換装置 |
US8841856B1 (en) * | 2013-10-03 | 2014-09-23 | Robertson Transformer Co. | Capacitive ladder feed for AC LED |
US9117733B2 (en) * | 2013-10-18 | 2015-08-25 | Posco Led Company Ltd. | Light emitting module and lighting apparatus having the same |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
US9660161B2 (en) | 2014-07-07 | 2017-05-23 | Cree, Inc. | Light emitting diode (LED) components including contact expansion frame |
KR102209036B1 (ko) * | 2014-08-26 | 2021-01-28 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US9214607B1 (en) | 2014-09-05 | 2015-12-15 | Cree, Inc. | Wire bonded light emitting diode (LED) components including reflective layer |
JP6913460B2 (ja) * | 2014-09-26 | 2021-08-04 | 東芝ホクト電子株式会社 | 発光モジュール |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
TWI577058B (zh) * | 2014-11-14 | 2017-04-01 | Bidirectional light emitting diodes and their lighting devices | |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
DE102015114010A1 (de) * | 2015-08-24 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US10510800B2 (en) * | 2016-02-09 | 2019-12-17 | The Penn State Research Foundation | Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
KR20180065700A (ko) | 2016-12-08 | 2018-06-18 | 삼성전자주식회사 | 발광 소자 |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
KR101980548B1 (ko) * | 2017-11-09 | 2019-05-21 | 엘지전자 주식회사 | 차량용 램프 및 차량 |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
US11508715B2 (en) * | 2020-04-24 | 2022-11-22 | Creeled, Inc. | Light-emitting diode chip with electrical overstress protection |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55148477A (en) | 1979-05-08 | 1980-11-19 | Sanyo Electric Co Ltd | Fabricating method of light emitting diode |
JPS57167690A (en) | 1981-04-07 | 1982-10-15 | Toa Tokushu Denki Kk | Control of light-emitting diode |
US5187377A (en) * | 1988-07-15 | 1993-02-16 | Sharp Kabushiki Kaisha | LED array for emitting light of multiple wavelengths |
US5027168A (en) * | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
JP2704181B2 (ja) * | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | 化合物半導体単結晶薄膜の成長方法 |
US5338994A (en) * | 1989-07-20 | 1994-08-16 | General Electric Company | Method and apparatus for achieving current balance in parallel connected switching devices |
US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5604135A (en) * | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) * | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US6013199A (en) * | 1997-03-04 | 2000-01-11 | Symyx Technologies | Phosphor materials |
JP3195720B2 (ja) | 1994-12-20 | 2001-08-06 | シャープ株式会社 | 多色led素子およびその多色led素子を用いたled表示装置、並びに多色led素子の製造方法 |
US5936599A (en) * | 1995-01-27 | 1999-08-10 | Reymond; Welles | AC powered light emitting diode array circuits for use in traffic signal displays |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
JP3808534B2 (ja) * | 1996-02-09 | 2006-08-16 | Tdk株式会社 | 画像表示装置 |
US6066681A (en) * | 1996-05-24 | 2000-05-23 | Stepan Company | Open celled polyurethane foams and methods and compositions for preparing such foams |
US5803579A (en) * | 1996-06-13 | 1998-09-08 | Gentex Corporation | Illuminator assembly incorporating light emitting diodes |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5912447A (en) * | 1997-01-14 | 1999-06-15 | United Parcel Service Of America, Inc. | Concentric optical path equalizer with radially moving mirrors |
EP0907970B1 (de) * | 1997-03-03 | 2007-11-07 | Koninklijke Philips Electronics N.V. | Weisse lumineszenzdiode |
JPH1116683A (ja) | 1997-06-23 | 1999-01-22 | Masanori Minato | 発光表示装置 |
US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
JP2000208822A (ja) | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
US6696703B2 (en) * | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
US6414662B1 (en) * | 1999-10-12 | 2002-07-02 | Texas Digital Systems, Inc. | Variable color complementary display device using anti-parallel light emitting diodes |
US6885035B2 (en) * | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
US6388393B1 (en) * | 2000-03-16 | 2002-05-14 | Avionic Instruments Inc. | Ballasts for operating light emitting diodes in AC circuits |
DE10013207B4 (de) | 2000-03-17 | 2014-03-13 | Tridonic Gmbh & Co Kg | Ansteuerung von Leuchtdioden (LED's) |
US6577073B2 (en) * | 2000-05-31 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Led lamp |
US6636027B1 (en) | 2000-10-24 | 2003-10-21 | General Electric Company | LED power source |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US6888167B2 (en) * | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
US7858403B2 (en) * | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
US6635503B2 (en) * | 2002-01-28 | 2003-10-21 | Cree, Inc. | Cluster packaging of light emitting diodes |
US6945844B2 (en) * | 2002-07-26 | 2005-09-20 | Cree, Inc. | Methods for dynamically controlling a semiconductor dicing saw |
AU2003276867A1 (en) * | 2002-09-19 | 2004-04-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
-
2002
- 2002-10-22 US US10/277,845 patent/US7009199B2/en not_active Expired - Lifetime
-
2003
- 2003-06-27 TW TW092117654A patent/TW200409381A/zh unknown
- 2003-10-02 WO PCT/US2003/031335 patent/WO2004038801A2/en not_active Application Discontinuation
- 2003-10-02 KR KR1020057006820A patent/KR20050074491A/ko not_active Application Discontinuation
- 2003-10-02 EP EP03809537A patent/EP1554755A2/en not_active Withdrawn
- 2003-10-02 JP JP2004546783A patent/JP2006504265A/ja active Pending
- 2003-10-02 AU AU2003277253A patent/AU2003277253A1/en not_active Abandoned
- 2003-10-02 CN CNA2003801018074A patent/CN1706043A/zh active Pending
- 2003-10-02 CA CA002501686A patent/CA2501686A1/en not_active Abandoned
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US8252203B2 (en) | 2004-06-10 | 2012-08-28 | Seoul Semiconductor Co., Ltd. | Luminescent material |
US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US8900482B2 (en) | 2004-06-10 | 2014-12-02 | Seoul Semiconductor Co., Ltd. | Light emitting device |
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US8674380B2 (en) | 2006-08-29 | 2014-03-18 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light |
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CN110136636B (zh) * | 2018-02-08 | 2023-11-24 | 三星显示有限公司 | 显示装置 |
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Also Published As
Publication number | Publication date |
---|---|
TW200409381A (en) | 2004-06-01 |
WO2004038801A2 (en) | 2004-05-06 |
CA2501686A1 (en) | 2004-05-06 |
EP1554755A2 (en) | 2005-07-20 |
JP2006504265A (ja) | 2006-02-02 |
AU2003277253A1 (en) | 2004-05-13 |
WO2004038801A3 (en) | 2004-10-07 |
US7009199B2 (en) | 2006-03-07 |
US20040075399A1 (en) | 2004-04-22 |
AU2003277253A8 (en) | 2004-05-13 |
KR20050074491A (ko) | 2005-07-18 |
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