CN1691860A - 顶部发射有机场致发光显示器及其制造方法 - Google Patents
顶部发射有机场致发光显示器及其制造方法 Download PDFInfo
- Publication number
- CN1691860A CN1691860A CNA2005100716559A CN200510071655A CN1691860A CN 1691860 A CN1691860 A CN 1691860A CN A2005100716559 A CNA2005100716559 A CN A2005100716559A CN 200510071655 A CN200510071655 A CN 200510071655A CN 1691860 A CN1691860 A CN 1691860A
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- CN
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- Prior art keywords
- layer
- electrode layer
- electroluminescence display
- organic electroluminescence
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 205
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000012044 organic layer Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 59
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 238000005401 electroluminescence Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 230000005764 inhibitory process Effects 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000012797 qualification Methods 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 evanohm Chemical compound 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B3/00—Measuring instruments characterised by the use of mechanical techniques
- G01B3/02—Rulers with scales or marks for direct reading
- G01B3/04—Rulers with scales or marks for direct reading rigid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040023899A KR100623252B1 (ko) | 2004-04-07 | 2004-04-07 | 전면 발광 유기 전계 발광 소자 및 그의 제조방법 |
KR23899/04 | 2004-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1691860A true CN1691860A (zh) | 2005-11-02 |
CN100583493C CN100583493C (zh) | 2010-01-20 |
Family
ID=35059665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200510071655A Active CN100583493C (zh) | 2004-04-07 | 2005-04-07 | 顶部发射有机场致发光显示器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7417261B2 (zh) |
JP (1) | JP4454503B2 (zh) |
KR (1) | KR100623252B1 (zh) |
CN (1) | CN100583493C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101257035B (zh) * | 2007-02-26 | 2012-07-18 | 奇美电子股份有限公司 | 顶部发光有机电致发光显示器 |
CN101589485B (zh) * | 2007-01-22 | 2013-01-02 | 皇家飞利浦电子股份有限公司 | 发光器件 |
CN104218171A (zh) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN105226197A (zh) * | 2014-07-04 | 2016-01-06 | 上海和辉光电有限公司 | 一种oled结构 |
CN106169539A (zh) * | 2016-09-30 | 2016-11-30 | 昆山国显光电有限公司 | 有机发光器件及其制造方法 |
WO2020237782A1 (zh) * | 2019-05-28 | 2020-12-03 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2007123066A (ja) * | 2005-10-28 | 2007-05-17 | Seiko Epson Corp | 有機el装置 |
KR100667082B1 (ko) * | 2005-11-02 | 2007-01-10 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그 제조방법 |
KR100768191B1 (ko) | 2005-11-12 | 2007-10-17 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치의 제조방법 및 유기 발광 표시장치 |
KR100841368B1 (ko) * | 2006-12-13 | 2008-06-26 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 |
JP5329062B2 (ja) * | 2007-08-29 | 2013-10-30 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
JP5969216B2 (ja) * | 2011-02-11 | 2016-08-17 | 株式会社半導体エネルギー研究所 | 発光素子、表示装置、照明装置、及びこれらの作製方法 |
US8729554B2 (en) | 2011-04-27 | 2014-05-20 | Chimei Innolux Corporation | Top-emission organic light-emitting diode structure |
US8766303B2 (en) * | 2012-08-31 | 2014-07-01 | High Power Opto. Inc. | Light-emitting diode with a mirror protection layer |
KR102090555B1 (ko) * | 2012-12-27 | 2020-03-18 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
KR102451538B1 (ko) | 2017-12-05 | 2022-10-07 | 삼성디스플레이 주식회사 | 표시 패널 및 그 제조 방법 |
JP7231487B2 (ja) * | 2019-05-30 | 2023-03-01 | 株式会社神戸製鋼所 | 反射アノード電極及びその製造方法、薄膜トランジスタ基板、有機elディスプレイ、並びにスパッタリングターゲット |
US11024774B2 (en) * | 2019-10-15 | 2021-06-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Display device reflector having improved reflectivity |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100212098B1 (ko) | 1987-09-19 | 1999-08-02 | 가나이 쓰도무 | 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법 |
JP3704774B2 (ja) | 1994-12-08 | 2005-10-12 | 株式会社デンソー | El素子 |
JP2798066B2 (ja) * | 1996-08-05 | 1998-09-17 | 日本電気株式会社 | 薄膜トランジスター、その製造方法および表示装置 |
JP2000258798A (ja) * | 1999-03-05 | 2000-09-22 | Sanyo Electric Co Ltd | 表示装置 |
US6387600B1 (en) | 1999-08-25 | 2002-05-14 | Micron Technology, Inc. | Protective layer during lithography and etch |
KR100858297B1 (ko) | 2001-11-02 | 2008-09-11 | 삼성전자주식회사 | 반사-투과형 액정표시장치 및 그 제조 방법 |
KR100477746B1 (ko) | 2002-06-22 | 2005-03-18 | 삼성에스디아이 주식회사 | 다층 구조의 애노드를 채용한 유기 전계 발광 소자 |
JP3821067B2 (ja) * | 2002-07-11 | 2006-09-13 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4711595B2 (ja) * | 2002-12-10 | 2011-06-29 | 株式会社半導体エネルギー研究所 | Elディスプレイ及び電子機器 |
KR100611157B1 (ko) * | 2003-11-29 | 2006-08-09 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그의 제조방법 |
-
2004
- 2004-04-07 KR KR1020040023899A patent/KR100623252B1/ko active IP Right Grant
-
2005
- 2005-01-07 JP JP2005002476A patent/JP4454503B2/ja active Active
- 2005-04-07 US US11/101,986 patent/US7417261B2/en active Active
- 2005-04-07 CN CN200510071655A patent/CN100583493C/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101589485B (zh) * | 2007-01-22 | 2013-01-02 | 皇家飞利浦电子股份有限公司 | 发光器件 |
CN101257035B (zh) * | 2007-02-26 | 2012-07-18 | 奇美电子股份有限公司 | 顶部发光有机电致发光显示器 |
CN104218171A (zh) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN105226197A (zh) * | 2014-07-04 | 2016-01-06 | 上海和辉光电有限公司 | 一种oled结构 |
CN106169539A (zh) * | 2016-09-30 | 2016-11-30 | 昆山国显光电有限公司 | 有机发光器件及其制造方法 |
WO2020237782A1 (zh) * | 2019-05-28 | 2020-12-03 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050224789A1 (en) | 2005-10-13 |
KR20050099026A (ko) | 2005-10-13 |
KR100623252B1 (ko) | 2006-09-18 |
CN100583493C (zh) | 2010-01-20 |
JP2005302696A (ja) | 2005-10-27 |
US7417261B2 (en) | 2008-08-26 |
JP4454503B2 (ja) | 2010-04-21 |
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