CN1689117B - 存储装置 - Google Patents
存储装置 Download PDFInfo
- Publication number
- CN1689117B CN1689117B CN03824185.4A CN200380241854A CN1689117B CN 1689117 B CN1689117 B CN 1689117B CN 200380241854 A CN200380241854 A CN 200380241854A CN 1689117 B CN1689117 B CN 1689117B
- Authority
- CN
- China
- Prior art keywords
- group
- memory
- storage
- real storage
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005055 memory storage Effects 0.000 title claims abstract description 19
- 230000015654 memory Effects 0.000 claims abstract description 153
- 238000012217 deletion Methods 0.000 claims description 10
- 230000037430 deletion Effects 0.000 claims description 10
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 101100420730 Mus musculus Sec23a gene Proteins 0.000 description 2
- 101150080918 SEC23 gene Proteins 0.000 description 2
- 101100365194 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SEC7 gene Proteins 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/002832 WO2004081946A1 (ja) | 2003-03-11 | 2003-03-11 | メモリ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1689117B true CN1689117B (zh) | 2015-08-12 |
Family
ID=32983432
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03824185.4A Expired - Fee Related CN1689117B (zh) | 2003-03-11 | 2003-03-11 | 存储装置 |
CN03824185.4A Granted CN1689117A (zh) | 2003-03-11 | 2003-03-11 | 存储装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03824185.4A Granted CN1689117A (zh) | 2003-03-11 | 2003-03-11 | 存储装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2004081946A1 (zh) |
CN (2) | CN1689117B (zh) |
WO (1) | WO2004081946A1 (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5673222A (en) * | 1995-06-20 | 1997-09-30 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2625277B2 (ja) * | 1991-05-20 | 1997-07-02 | 富士通株式会社 | メモリアクセス装置 |
US6591327B1 (en) * | 1999-06-22 | 2003-07-08 | Silicon Storage Technology, Inc. | Flash memory with alterable erase sector size |
JP2001084777A (ja) * | 1999-09-09 | 2001-03-30 | Hitachi Ltd | 半導体記憶装置 |
JP2002329396A (ja) * | 2001-04-26 | 2002-11-15 | Fujitsu Ltd | バンク構成を変更可能なフラッシュメモリ |
-
2003
- 2003-03-11 WO PCT/JP2003/002832 patent/WO2004081946A1/ja active Application Filing
- 2003-03-11 CN CN03824185.4A patent/CN1689117B/zh not_active Expired - Fee Related
- 2003-03-11 JP JP2004569330A patent/JPWO2004081946A1/ja active Pending
- 2003-03-11 CN CN03824185.4A patent/CN1689117A/zh active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5673222A (en) * | 1995-06-20 | 1997-09-30 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
CN1689117A (zh) | 2005-10-26 |
JPWO2004081946A1 (ja) | 2006-06-15 |
WO2004081946A1 (ja) | 2004-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150212 Address after: American California Applicant after: Spansion LLC N. D. Ges D. Staates Address before: Kanagawa Applicant before: Fujitsu Ltd. |
|
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160329 Address after: American California Patentee after: Cypress Semiconductor Corp. Address before: American California Patentee before: Spansion LLC N. D. Ges D. Staates |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150812 Termination date: 20190311 |