CN1668147A - Pixel structure of electroluminescent device and method for manufacturing same - Google Patents
Pixel structure of electroluminescent device and method for manufacturing same Download PDFInfo
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- CN1668147A CN1668147A CN200510067438.2A CN200510067438A CN1668147A CN 1668147 A CN1668147 A CN 1668147A CN 200510067438 A CN200510067438 A CN 200510067438A CN 1668147 A CN1668147 A CN 1668147A
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Abstract
This invention discloses a pixel structure used in an electric excitation luminance device and its manufacturing method including a switch transistor, a drive transistor and an electric excitation element, among which, the switch transistor is connected with the drive transistor, the current carrier mobilities of the two transistors are different, the electric excitation luminance element is connected with the drive transistor. The manufacturing method also includes using a technological method for a gray stage photomask to form switch transistors and drive transistors with different carrier mobilities.
Description
Technical field
The present invention relates to a kind of dot structure and preparation method thereof, particularly relate to a kind of dot structure that is applicable to electroluminescent display and preparation method thereof.
Background technology
The application of flat-panel screens is generally accepted extensively use by society in recent years, as flat-surface television, mobile phone, personal digital assistant, digital camera, automobile-used display and projector or the like.
But the flat-panel screens summary is divided into plasma display, LCD, light emitting diode indicator and organic electro-luminescent display or the like, wherein organic electro-luminescent display is more frivolous with it, power saving, high brightness, various advantages such as wide viewing angle and portability makes it become one of the most promising industry, organic electro-luminescent display is a kind of of electro-exciting light-emitting display, therefore each manufacturer all drops into research and development and the improvement that a large amount of funds carry out electro-exciting light-emitting display, in the hope of producing colory electro-exciting light-emitting display, to promote the upgrading and the competitiveness of industry.
See also Fig. 1, it wherein comprises a switching transistor 11, a driving transistors 12, an electroluminescence element 13 at least and also can comprise an electric capacity 14 for a dot structure schematic diagram of existing electro-exciting light-emitting display.Wherein switching transistor 11 and driving transistors 12 have identical carrier mobility during fabrication, switching transistor 11 is the switches that enter electric capacity 14 as DID, and after driving transistors 12 converts the magnitude of voltage on the electric capacity 14 to electric current, Continuous Drive electroluminescence element 13 is luminous, wherein electroluminescence element 13 can be Organic Light Emitting Diode, injection current makes electronics and hole in conjunction with afterwards produce power is luminous, and when this electroluminescence element 13 was formed by an organic molecule material, referring in particular to this electro-exciting light-emitting display was organic electro-luminescent display.
See also Fig. 2 to Figure 11, it is existing generalized section of making a dot structure of electro-exciting light-emitting display.As shown in Figure 2, at first provide a substrate 21, this substrate 21 can be a flat glass substrate, also can be a bendable substrate.Deposition semi-conductor layer 22 on these substrate 21 surfaces, this semiconductor layer 22 can be polysilicon or single crystal silicon material to be formed and forms by chemical vapour deposition (CVD), and a little alloy that can mix in deposition process.
Please then consult Fig. 3, the painting photoresist layer and uses existing photomask photoetching technique on semiconductor layer 22, form one first photoresist layer 221 on semiconductor layer 22.Be shielding then with the first photoresist layer 221, patterned semiconductor layer 22, this patterning process can be existing physics plasma dry or chemical wet.In the step of patterned semiconductor layer 22 and since this semiconductor layer 22 have the first photoresist layer 221 on the upper strata as protection, can form as shown in Figure 4 independently semiconductor layer 22 then with as the basis that forms in the future transistor unit.Then again with 22 groups of the first photoresist layer 221 and semiconductor layers from removing, this removes process and can cause resist liquid with delustering and finish.
Please then consult Fig. 5, continue deposition one first dielectric layer 23 and a conductive layer 24 on semiconductor layer 22 and substrate 21, wherein first dielectric layer 23 can be made up of insulating material such as silica, form by chemical vapour deposition (CVD) or the growth of the heat under gaseous environment, and conductive layer 24 can be made up of low electrical resistant material such as aluminium, by metal ion sputter or chemical plating process deposition, then form one second photoresist layer 241 on conductive layer 24.
Please follow and consult Fig. 6 in the lump, with the second photoresist layer 241 is shielding, patterned conductive layer 24, to form a transistorized grid 242 and the grid plain conductor that is connected most particular crystal tube grids, this patterning process can be etching and made grid 242 cross section scopes be smaller than the second photoresist layer, 241 scope.Then carrying out one first ion with the second photoresist layer 241 as shielding injects 25 programs alloy is flow in the semiconductor layer 22, forming one first ion doping zone 222, and this first doped region 222 can be used as the basis of transistorized source electrode and drain electrode.Wherein alloy can be the higher boron of concentration or two fluorine boron, and is not subjected to first ion to inject 25 semiconductor layer 22 zones under the second photoresist layer 241, can form transistorized grid passage.So far promptly finish transistor unit and comprise that the basis of source electrode, drain electrode and grid makes.Because the transistor unit size constantly can constantly be dwindled under the improvement in photoetching technique, but also make thermoelectronic effect under component size is too small, can cause transistorized leakage current to increase, so general all can be in semiconductor layer 22 both sides the lower alloy of doping content again, reducing transistorized leakage current, but relative also can reduce transistorized carrier mobility.
Please follow and consult Fig. 7 in the lump, with 241 groups on the second photoresist layer after removing, using one second ion to inject 251 programs flows into alloy in the semiconductor layer 22 as shielding with grid 242, to form one second doped region 223 as transistorized lightly mixed drain area, wherein alloy can be the lower boron of concentration or two fluorine boron, so promptly can reduce transistorized leakage current.
Please then consult Fig. 8, after continuing to deposit one second dielectric layer 26, follow patterning first dielectric layer 23 and second dielectric layer 26, to form one first opening 261 that is through to the first ion doping zone 222 from second dielectric layer, 26 upper surfaces.
Please follow and consult Fig. 9 in the lump, continue deposition one electrode layer 27, its deposition process also comprises and being deposited in first opening 261, so that a line from second dielectric layer, 26 to first ion doping zones 222 to be provided.Then patterned electrode layer 27 connects each transistorized plain conductor to form, to finish circuit production.After above-mentioned ion implantation doping program, can carry out a hot tempering process usually to repair any physical property injury of doped region, activate, disperse alloy simultaneously.
Please follow and consult Figure 10 in the lump, continue deposition one the 3rd dielectric layer 28, follow patterning the 3rd dielectric layer 28, to form one second opening 281 that is through to electrode layer 27 from the 3rd dielectric layer upper surface.
Please follow at last and consult Figure 11 in the lump, continue deposition one positive electrode layer 29, its deposition process also comprises and being deposited in second opening 281, so that a line from the 3rd dielectric layer 28 to electrode layer 27 to be provided, this line is as driving transistors is electrically connected to electroluminescence element, and wherein positive electrode layer 29 generally is indium tin oxide and forms.Then patterning positive electrode layer 29 is made with the positive electrode of finishing electroluminescence element, last form the transistor fabrication that a luminescent layer and a negative electrode are promptly finished a dot structure of electro-exciting light-emitting display on positive electrode layer 29, wherein this luminescent layer can be formed or is light-emitting diode by an organic molecule material.
By the method for aforementioned existing making electro-exciting light-emitting display one pixel, wherein the transistor in the pixel is identical because of technology mode, makes that the transistor in the pixel has identical carrier mobility.Please consult Fig. 1 and before described again, one pixel of electro-exciting light-emitting display wherein switching transistor and driving transistors has different functions respectively when driving, switching transistor enters the switch of capacitor as digital image data, and driving transistors is after converting the magnitude of voltage on the electric capacity to electric current, and the Continuous Drive electroluminescence element is luminous.Wherein switching transistor requires lower leakage current on characteristic, can show the switching characteristic that opens or closes clearly to satisfy, and the carrier mobility that driving transistors is had relatively high expectations on characteristic, to satisfy fast supplying electric current with the driving electroluminescence element.But lower leakage current and higher this two specific character of carrier mobility are that fish and bear's paw can not get both usually, on technology,, then can form the transistor of higher leakage and higher carrier mobility characteristics if do not carry out the lower alloy of ion implantation doping concentration to form lightly mixed drain area; Otherwise, on technology, carry out the lower alloy of ion implantation doping concentration to form lightly mixed drain area as if having, then can form transistor than low-leakage current and low carrier mobility characteristic.Generally when making a pixel of electro-exciting light-emitting display, because it is important that switching transistor can show the switching characteristic that opens or closes clearly, usually all can carry out the lower alloy of ion implantation doping concentration to form lightly mixed drain area, so just sacrificed driving transistors fast supplying electric current with the characteristic of driving electroluminescence element, and when the higher current drives of needs, often because lower carrier mobility characteristic makes driving transistors normally to drive electroluminescence element and make the quality of electro-exciting light-emitting display greatly descend.In today that display industry develops rapidly, promote the display quality if can attempt to address the above problem, just can significantly promote the competitiveness of electro-exciting light-emitting display industry.
By this, develop a kind of dot structure, the transistor that this display pixel comprises two kinds of different qualities at least is the not good problem of degree of integration when solving a pixel of above-mentioned existing making electro-exciting light-emitting display.
Summary of the invention
A kind of dot structure provided by the invention comprises that at least a switching transistor, a driving transistors and an electroluminescence element are arranged on the substrate, and this substrate can be a glass substrate or be a bendable substrate.Wherein switching transistor is being electrically connected to driving transistors, and switching transistor and driving transistors have different carrier mobility characteristics; And electroluminescence element is driven for driving transistors to be electrically connected to driving transistors.
Wherein switching transistor also comprises one first doped region and one second doped region, and this second doped region is a light dope ion zone.And driving transistors includes only first doped region so that the carrier mobility characteristic of driving transistors is different from switching transistor.
So switching transistor just has lower leakage current characteristic, can show the switching characteristic that opens or closes clearly to satisfy, and driving transistors has higher carrier mobility characteristic, to satisfy fast supplying electric current with driven light-emitting element.
And in this pixel, form the manufacture method of switching transistor and driving transistors, also can comprise:
Use GTG photomask and light photoetching technique; formation has the photoresist layer of different-thickness; wherein the photoresist zone of developing via gray-scale areas has thin thickness; and then the range size difference that can utilize shielding protection is carried out the ion injection; form the switching transistor and the driving transistors of different qualities, wherein switching transistor also comprises second doped region.
Comprehensively above-mentioned, a kind of dot structure provided by the invention and transistorized manufacture method thereof, can satisfy the characteristic requirement of electro-exciting light-emitting display demonstration and drive principle, the quality of electro-exciting light-emitting display is significantly promoted, can promote the competitiveness of electro-exciting light-emitting display industry.
For the effect that makes technical characterictic of the present invention and reached is further understood and be familiar with, preferred embodiment hereinafter is provided and is aided with correlative type, and with describe in detail literal cooperate explanation as after.
Description of drawings
Fig. 1 is a dot structure schematic diagram of existing electro-exciting light-emitting display;
Fig. 2 to Figure 11 is existing each step generalized section of making a dot structure of electro-exciting light-emitting display; And
Figure 12 to Figure 23 is each step generalized section of making a dot structure of electro-exciting light-emitting display according to the present invention.
The simple symbol explanation
11: switching transistor;
12: driving transistors;
13: electroluminescence element;
14: electric capacity;
21: substrate;
22: semiconductor layer;
221: the first photoresist layers;
222: the first ion doping zones;
223: the second ion doping zones;
23: the first dielectric layers;
24: conductive layer;
241: the second photoresist layers;
242: grid;
Ion injected in 25: the first;
Ion injected in 251: the second;
26: the second dielectric layers;
261: the first openings;
27: electrode layer;
28: the three dielectric layers;
281: the second openings;
29: the positive electrode layer;
1021: semiconductor layer;
10211: the first semiconductor layers;
10212: the second semiconductor layers;
10213: the first doped regions;
10214: the second doped regions;
1041: conductive layer;
10411: the first conductive layers;
10412: the second conductive layers;
1042: the photoresist layer;
10421: the first photoresist layers;
104211: the first thickness;
104212: the second thickness;
10422: the second photoresist layers;
1043: the GTG photomask;
10431: gray-scale areas;
1044: the first photomasks; And
1045: the photoetching light source.
Embodiment
See also Figure 12 to Figure 23, its dot structure thin-film transistor generalized section for making electro-exciting light-emitting display according to the present invention.Be to simplify narration, the present invention is to be example with the transistor of making a P passage, but is not limited to this, as long as change alloy, can make the device of N passage.As shown in figure 12, provide a substrate 21 as the aforementioned, this substrate 21 can be a glass substrate or a bendable substrate.Deposition semi-conductor layer 1021 on substrate 21 surfaces, this semiconductor layer 1021 can be polysilicon or single crystal silicon material to be formed and forms by chemical vapour deposition (CVD), and a little the alloy of can mixing in deposition process.
Please follow and consult Figure 13 in the lump, utilize photomask photoetching technique patterned semiconductor layer 1021 to form one first semiconductor layer 10211 and one second semiconductor layer 10212, wherein this first semiconductor layer 10211 is the basis of switching transistor, and this second semiconductor layer 10212 is the basis of driving transistors.
Please then consult Figure 14, continue deposition one as the aforementioned first dielectric layer 23 on first semiconductor layer 10211, second semiconductor layer 10212 and substrate 21, wherein first dielectric layer 23 can be made up of insulating material such as silica, and growing up by chemical vapour deposition (CVD) or the heat under gaseous environment forms.Continue deposition one conductive layer 1041 on first dielectric layer 23, and conduct electricity 1041 layers can be formed by metal material such as aluminium, molybdenum or its alloy, deposit by metal ion sputter or chemical plating process.Then be coated with a photoresist layer 1042 on conductive layer 1041, and use a GTG photomask 1043 and one first photomask 1044 to carry out photoetching as shielding, GTG photomask 1043 can be half light modulation mask; Wherein GTG photomask 1043 comprises a gray-scale areas 10431.When using a photoetching light source 1045 to carry out the photoetching irradiation; photoresist layer 1042 under GTG photomask 1043 is owing to there being shielding protection not to be subjected to 1045 irradiations of photoetching light source to produce chemical change; the one first photoresist layer 10421 that photoresist layer 1042 is formed in developing process as shown in figure 15 has one first thickness area 104211; and photoetching light source 1045 can part be radiated on the photoresist layer 1042 under this gray-scale areas 10431 by gray-scale areas 10431; make that the photoresist film thickness can be thinner when developing but exposure energy is not enough, have one second thickness area 104212 with the one first photoresist layer 10421 that forms as shown in figure 15.Photoresist layer 1042 under first photomask 1044 forms one second photoresist layer 10422 as shown in figure 15 in developing process.
Please follow and consult Figure 16 in the lump, with the first photoresist layer 10421 and the second photoresist layer 10422 is shielding, this conductive layer 1041 of patterning is to form one first conductive layer 10411 and one second conductive layer 10412 corresponding first semiconductor layer 10211 and second semiconductor layer 10212 respectively, and wherein this first conductive layer 10411 can be used as the grid of switching transistor and the grid that this second conductive layer 10412 can be used as driving transistors.Then with the first photoresist layer 10421, the second photoresist layer 10422, first conductive layer 10411 and second conductive layer 10412 are as shielding, carry out one as the aforementioned first ion inject 25 programs alloy flow in first semiconductor layer 10211 and second semiconductor layer 10212, to form one first ion doping zone 10213, and this first doped region 1021 can be used as the source of switch and driving transistors, the basis of drain electrode, wherein alloy can be P type alloys such as the higher boron of concentration or two fluorine boron, and the ion doping concentration of this first doped region 10213 is less than or equal to 1.33 * 10 approximately
20Atom/cm
3, better be about 8.88 * 10
19Atom/cm
3And be not subjected to first ion to inject the grid passage that 25 first semiconductor layer 10211 and second semiconductor layer, 10212 zones can form switch and driving transistors under the first photoresist layer 10421 and the second photoresist layer 10422.So far promptly finishing switch and driving transistors element comprises source electrode, drains and make with the basis with grid.
Because the transistor unit size constantly can constantly be dwindled under the improvement in photoetching technique, but also make thermoelectronic effect under component size is too small, can cause the leakage current of switching transistor to increase, so will be in first semiconductor layer, 10211 both sides the lower alloy of doping content again, to reduce the leakage current and the carrier mobility of switching transistor.
Please follow and consult Figure 17 in the lump, use the plasma ashing photoresist to form the first photoresist layer 10421 and the second photoresist layer 10422, because second thickness area 104212 is thin than first thickness area 104211, only stay first thickness area 104211 so in podzolic process, make second thickness area 104212 be melted by complete ash.Be shielding with the first photoresist layer 10421 and the second photoresist layer 10422 again then; patterning first conductive layer 10411 and second conductive layer 10412; because first conductive layer, 10411 upper section photoresists are fallen by plasma ashing; make that first conductive layer, 10411 parts that do not have photoresist to protect can be etched, as shown in figure 18.
Please then consult Figure 19, with the first photoresist layer 10421, the second photoresist layer 10422, first conductive layer 10411 and second conductive layer 10412 are as shielding, carrying out as the aforementioned, second ion injects 251 programs, alloy is flow in first semiconductor layer 10211, to form one second ion doping zone 10214 to reduce the leakage current and the carrier mobility of switching transistor, and this second ion doping zone 10214 is a light dope ion zone, wherein alloy can be P type alloys such as the lower boron of concentration or two fluorine boron, and the ion doping concentration of this second doped region is less than or equal to 2.0 * 10 approximately
18Atom/cm
3, better be about 1.33 * 10
18Atom/cm
3Because second semiconductor layer 10212 is subjected to the protection of the second photoresist layer 10422 and 10412 shieldings of second conductive layer fully; so can not form the second ion doping zone 10214; so far just made switching transistor and driving transistors produce different qualities; wherein switching transistor has the second ion doping zone 10214; can significantly reduce the leakage current of switching transistor, and driving transistors does not contain second ion doping zone 10214 and the characteristic of still possessing its high carrier mobility.After above-mentioned ion implantation doping program, can carry out a hot tempering process usually to repair any physical property injury of doped region, activate, disperse alloy simultaneously.
Please then consult as shown in figure 20, with the first photoresist layer 10421 and the second photoresist layer 10422 remove the back continue deposition one as the aforementioned second dielectric layer 26 on first conductive layer 10411, second conductive layer 10412 and first dielectric layer 23, follow patterning first dielectric layer 23 and second dielectric layer 26, to form one first opening 261 that is through to the first ion doping zone 10213 from second dielectric layer, 26 upper surfaces.
Please follow and consult Figure 21 in the lump, continue deposition one electrode layer 27 as the aforementioned, its deposition process more comprises and being deposited in first opening 261, so that a line from second dielectric layer, 26 to first ion doping zones 10213 to be provided.Then patterned electrode layer 27 connects each transistorized plain conductor to form, and the lead that wherein is connected to the first ion doping zone 10213 more can be used as source, the drain electrode of switch and driving transistors, to finish circuit production.
Please follow and consult Figure 22 in the lump, continue deposition one as the aforementioned behind the 3rd dielectric layer 28, then patterning the 3rd dielectric layer 28 is to form one second opening 281 that is through to electrode layer 27 from the 3rd dielectric layer upper surface.
See also Figure 23 at last, continue deposition one positive electrode layer 29 as the aforementioned, its deposition process also comprises and being deposited in second opening 281, and so that a line from the 3rd dielectric layer 28 to electrode layer 27 to be provided, this line is that driving transistors is electrically connected to electroluminescence element.Wherein positive electrode layer 29 generally is indium tin oxide and forms, then patterning positive electrode layer 29 is with the making of the positive electrode of finishing electroluminescence element, last form the transistor fabrication that a luminescent layer and a negative electrode are promptly finished a dot structure of electro-exciting light-emitting display on positive electrode layer 29, wherein the luminescent layer of this electroluminescence element can be formed or is light-emitting diode by an organic molecule material.
By the foregoing description explanation, utilize a kind of dot structure provided by the invention and transistorized manufacture method thereof, can satisfy the characteristic requirement of electro-exciting light-emitting display demonstration and drive principle.And special use of present embodiment contained GTG photomask photoetching technique, produces the switch and the driving transistors of different qualities in a display pixel simultaneously, and electro-exciting light-emitting display shows and the characteristic requirement of drive principle to satisfy.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (17)
1, a kind of dot structure is applicable to an electro photo-luminescent apparatus, comprises at least:
One switching transistor is arranged on the substrate;
One driving transistors is arranged on this substrate, is electrically connected with this switching transistor, wherein the carrier mobility difference of this switching transistor and this driving transistors; And
One electroluminescence element is arranged on this substrate, is electrically connected with this driving transistors.
2, dot structure according to claim 1, wherein this switching transistor comprises one first doped region and one second doped region, this second doped region is a light dope ion zone.
3, dot structure as claimed in claim 2, wherein this first doped region and this second doped region are a P type ion doping zone.
4, dot structure as claimed in claim 2, wherein the ion doping concentration of this first doped region is approximately less than 1.33 * 10
20Atom/cm
3
5, dot structure as claimed in claim 4, wherein the ion doping concentration of this first doped region is about 8.88 * 10
19Atom/cm
3
6, dot structure as claimed in claim 2, wherein the ion doping concentration of this second doped region is approximately less than 2.0 * 10
18Atom/cm
3
7, dot structure as claimed in claim 6, wherein the ion doping concentration of this second doped region is about 1.33 * 10
18Atom/cm
3
8, dot structure as claimed in claim 1, wherein this electroluminescence element is an Organic Light Emitting Diode.
9, dot structure as claimed in claim 1, wherein this substrate is a glass substrate or a bendable substrate.
10, a kind of one pixel structure process method comprises:
Form semi-conductor layer on a substrate;
This semiconductor layer of patterning is to form one first semiconductor layer and one second semiconductor layer;
Form one first dielectric layer on this first semiconductor layer, this second semiconductor layer and this substrate;
Form a conductive layer on this first dielectric layer;
Form a photoresist layer on this conductive layer;
This photoresist layer of patterning is to form one first photoresist layer and one second photoresist layer respectively to should first semiconductor layer and this second semiconductor layer, wherein the first photoresist layer behind this patterning has one first thickness and one second thickness, and this first thickness is not equal to this second thickness;
This conductive layer of patterning is to form one first conductive layer and one second conductive layer respectively to should first semiconductor layer and this second semiconductor layer;
With this first photoresist layer, this second photoresist layer, this first conductive layer and this second conductive layer serves as that one first ion injecting program is carried out in shielding, makes this first semiconductor layer and this second semiconductor layer have one first ion doping zone;
This first photoresist layer of patterning and this second photoresist layer;
This first conductive layer of patterning and this second conductive layer; Carry out one second ion injecting program, make this first semiconductor layer have one second ion doping zone, wherein this second ion doping zone is a light dope ion zone;
Remove this first photoresist layer and this second photoresist layer;
Form one second dielectric layer on this first conductive layer, this second conductive layer and this first dielectric layer;
This second dielectric layer of patterning exposes the first ion doping zone of this first semiconductor layer and this second semiconductor layer to form a plurality of openings;
Form electrode layer and on this second dielectric layer and via those openings, connect this first ion doping zone; And
This electrode layer of patterning is with the source/drain that forms a driving transistors and the source/drain of a switching transistor.
11, one pixel structure process method as claimed in claim 10, wherein this photoresist layer of patterning comprises with the step that forms this first photoresist layer and this second photoresist layer:
Be provided with a GTG photomask on this first photoresist layer and one first photomask on this second photoresist layer; And
With this GTG photomask and this first photomask is shielding, and this photoresist layer that exposes is to form this first photoresist layer and this second photoresist layer.
12, one pixel structure process method as claimed in claim 10, wherein this first doped region and this second doped region are a P type ion doping zone.
13, one pixel structure process method as claimed in claim 10, wherein the ion doping concentration of this first doped region is approximately less than 1.33 * 10
20Atom/cm
3
14, one pixel structure process method as claimed in claim 13, wherein the ion doping concentration of this first doped region is about 8.88 * 10
19Atom/cm
3
15, one pixel structure process method as claimed in claim 10, wherein the ion doping concentration of this second doped region is approximately less than 2.0 * 10
18Atom/cm
3
16, one pixel structure process method as claimed in claim 15, wherein the ion doping concentration of this second doped region is about 1.33 * 10
18Atom/cm
3
17, one pixel structure process method as claimed in claim 10 comprises that also forming an electroluminescence element is electrically connected on this substrate and with this driving transistors.
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| CNB2005100674382A CN100426555C (en) | 2005-04-21 | 2005-04-21 | Pixel structure of electroluminescent device and method for manufacturing same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100674382A CN100426555C (en) | 2005-04-21 | 2005-04-21 | Pixel structure of electroluminescent device and method for manufacturing same |
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| CN101772848B (en) * | 2007-07-17 | 2015-08-19 | 创造者科技有限公司 | Electronic component and manufacture method thereof |
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| KR100466628B1 (en) * | 2002-11-12 | 2005-01-15 | 삼성에스디아이 주식회사 | Flat panel display and fabrication method thereof |
| US7385223B2 (en) * | 2003-04-24 | 2008-06-10 | Samsung Sdi Co., Ltd. | Flat panel display with thin film transistor |
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