CN1661774A - 施主薄片及其制造方法、及制造晶体管和显示器的方法 - Google Patents
施主薄片及其制造方法、及制造晶体管和显示器的方法 Download PDFInfo
- Publication number
- CN1661774A CN1661774A CN2004100819211A CN200410081921A CN1661774A CN 1661774 A CN1661774 A CN 1661774A CN 2004100819211 A CN2004100819211 A CN 2004100819211A CN 200410081921 A CN200410081921 A CN 200410081921A CN 1661774 A CN1661774 A CN 1661774A
- Authority
- CN
- China
- Prior art keywords
- type
- nanoparticle
- donor sheet
- nanoparticles
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000002105 nanoparticle Substances 0.000 claims abstract description 141
- 239000010408 film Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000012546 transfer Methods 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 68
- 239000002052 molecular layer Substances 0.000 claims description 30
- 239000000835 fiber Substances 0.000 claims description 29
- 239000002070 nanowire Substances 0.000 claims description 29
- 239000002759 woven fabric Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002073 nanorod Substances 0.000 claims description 10
- 229920005594 polymer fiber Polymers 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 239000002074 nanoribbon Substances 0.000 claims 4
- 229920002457 flexible plastic Polymers 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 118
- -1 acryl Chemical group 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001523 electrospinning Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910016048 MoW Inorganic materials 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000009941 weaving Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- GSCLWPQCXDSGBU-UHFFFAOYSA-L copper;phthalate Chemical compound [Cu+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O GSCLWPQCXDSGBU-UHFFFAOYSA-L 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ZBKIUFWVEIBQRT-UHFFFAOYSA-N gold(1+) Chemical compound [Au+] ZBKIUFWVEIBQRT-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/382—Contact thermal transfer or sublimation processes
- B41M5/38207—Contact thermal transfer or sublimation processes characterised by aspects not provided for in groups B41M5/385 - B41M5/395
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/382—Contact thermal transfer or sublimation processes
- B41M5/392—Additives, other than colour forming substances, dyes or pigments, e.g. sensitisers, transfer promoting agents
- B41M5/395—Macromolecular additives, e.g. binders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR200413007 | 2004-02-26 | ||
KR20040013007 | 2004-02-26 | ||
KR1020040026647A KR100625999B1 (ko) | 2004-02-26 | 2004-04-19 | 도너 시트, 상기 도너 시트의 제조방법, 상기 도너 시트를이용한 박막 트랜지스터의 제조방법, 및 상기 도너 시트를이용한 평판 표시장치의 제조방법 |
KR200426647 | 2004-04-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1661774A true CN1661774A (zh) | 2005-08-31 |
CN100403492C CN100403492C (zh) | 2008-07-16 |
Family
ID=34889500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100819211A Active CN100403492C (zh) | 2004-02-26 | 2004-12-29 | 施主薄片及其制造方法、及制造晶体管和显示器的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7381579B2 (zh) |
JP (1) | JP4885462B2 (zh) |
CN (1) | CN100403492C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102162176A (zh) * | 2011-03-16 | 2011-08-24 | 华中科技大学 | 一种微纳波纹结构及其制备方法、装置和应用 |
CN105916696A (zh) * | 2013-10-30 | 2016-08-31 | 荷兰应用自然科学研究组织Tno | 用于在基底上形成图案化结构的方法与*** |
CN105826345B (zh) * | 2007-01-17 | 2018-07-31 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学*** |
CN109473571A (zh) * | 2018-10-17 | 2019-03-15 | 大连交通大学 | 一种具有导电能力的电致发光器件稀土纳米发光层的制备方法 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100625999B1 (ko) * | 2004-02-26 | 2006-09-20 | 삼성에스디아이 주식회사 | 도너 시트, 상기 도너 시트의 제조방법, 상기 도너 시트를이용한 박막 트랜지스터의 제조방법, 및 상기 도너 시트를이용한 평판 표시장치의 제조방법 |
KR100647699B1 (ko) * | 2005-08-30 | 2006-11-23 | 삼성에스디아이 주식회사 | 나노 반도체 시트, 상기 나노 반도체 시트의 제조방법,상기 나노 반도체 시트를 이용한 박막 트랜지스터의제조방법, 상기 나노 반도체 시트를 이용한 평판표시장치의 제조방법, 박막 트랜지스터, 및 평판 표시장치 |
US20070069212A1 (en) * | 2005-09-29 | 2007-03-29 | Matsushita Electric Industrial Co., Ltd. | Flat panel display and method for manufacturing the same |
WO2007083570A1 (ja) * | 2006-01-16 | 2007-07-26 | Matsushita Electric Industrial Co., Ltd. | 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法 |
WO2007117668A2 (en) * | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
WO2008111947A1 (en) | 2006-06-24 | 2008-09-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
WO2008023716A1 (fr) * | 2006-08-25 | 2008-02-28 | Idemitsu Kosan Co., Ltd. | Substrat de transfert pour dispositif d'affichage à électroluminescence organique |
WO2008033388A2 (en) * | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
SG10201502808UA (en) | 2006-10-12 | 2015-05-28 | Cambrios Technologies Corp | Nanowire-Based Transparent Conductors And Applications Thereof |
US8018568B2 (en) | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
JP5105842B2 (ja) * | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
WO2008131304A1 (en) | 2007-04-20 | 2008-10-30 | Cambrios Technologies Corporation | Composite transparent conductors and methods of forming the same |
US8035988B2 (en) * | 2007-06-15 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | Method and device for repeatable shorting and unshorting of micro-electrical circuits |
WO2009031482A1 (en) | 2007-09-07 | 2009-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8028621B2 (en) * | 2008-05-02 | 2011-10-04 | International Business Machines Corporation | Three-dimensional structures and methods of fabricating the same using a printing plate |
US20090278213A1 (en) * | 2008-05-08 | 2009-11-12 | International Business Machines Corporation | Electrode arrays and methods of fabricating the same using printing plates to arrange particles in an array |
US8269985B2 (en) * | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
KR101015534B1 (ko) * | 2008-10-15 | 2011-02-16 | 주식회사 동부하이텍 | 저유전 상수를 갖는 절연막 및 이를 이용한 에어갭 제조 방법 |
JP5442234B2 (ja) | 2008-10-24 | 2014-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
EP2256814B1 (en) * | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
KR101073552B1 (ko) * | 2009-10-09 | 2011-10-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101789309B1 (ko) * | 2009-10-21 | 2017-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 아날로그 회로 및 반도체 장치 |
KR102286284B1 (ko) | 2009-11-06 | 2021-08-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US8912020B2 (en) | 2011-11-23 | 2014-12-16 | International Business Machines Corporation | Integrating active matrix inorganic light emitting diodes for display devices |
US20140262443A1 (en) * | 2013-03-14 | 2014-09-18 | Cambrios Technologies Corporation | Hybrid patterned nanostructure transparent conductors |
US9472507B2 (en) * | 2013-06-17 | 2016-10-18 | Samsung Display Co., Ltd. | Array substrate and organic light-emitting display including the same |
EP2883709A1 (en) * | 2013-12-16 | 2015-06-17 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method and system for forming a patterned structure on a substrate |
US10910590B2 (en) * | 2014-03-27 | 2021-02-02 | Universal Display Corporation | Hermetically sealed isolated OLED pixels |
US10749123B2 (en) | 2014-03-27 | 2020-08-18 | Universal Display Corporation | Impact resistant OLED devices |
US10752834B2 (en) * | 2018-05-17 | 2020-08-25 | Chung Yuan Christian University | Composite fluorescent gold nanoclusters with high quantum yield and method for manufacturing the same |
US10756243B1 (en) * | 2019-03-04 | 2020-08-25 | Chung Yuan Christian University | Light-emitting diode package structure and method for manufacturing the same |
LU102294B1 (en) | 2020-12-17 | 2022-06-21 | Fyzikalni Ustav Av Cr V V I | A method and a device for assembly of a nanomaterial structure |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5851709A (en) * | 1997-10-31 | 1998-12-22 | Eastman Kodak Company | Method for selective transfer of a color organic layer |
JP2005097003A (ja) * | 2000-05-31 | 2005-04-14 | Nec Corp | カーボンナノチューブの固着方法 |
US20020130311A1 (en) * | 2000-08-22 | 2002-09-19 | Lieber Charles M. | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
KR100478522B1 (ko) | 2001-11-28 | 2005-03-28 | 삼성에스디아이 주식회사 | 유기 화합물 유도체막층을 포함하고 있는 고분자 유기전계 발광 소자 및 그 제조 방법 |
US6872645B2 (en) * | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US6760245B2 (en) * | 2002-05-01 | 2004-07-06 | Hewlett-Packard Development Company, L.P. | Molecular wire crossbar flash memory |
US20040191564A1 (en) * | 2002-12-17 | 2004-09-30 | Samsung Sdi Co., Ltd. | Donor film for low molecular weight full color organic electroluminescent device using laser induced thermal imaging method and method for fabricating low molecular weight full color organic electroluminescent device using the film |
WO2005004205A2 (en) * | 2003-06-26 | 2005-01-13 | E.I. Dupont De Nemours And Company | Methods for forming patterns of a filled dielectric material on substrates |
-
2004
- 2004-11-24 US US10/995,514 patent/US7381579B2/en active Active
- 2004-12-29 CN CNB2004100819211A patent/CN100403492C/zh active Active
-
2005
- 2005-02-25 JP JP2005051635A patent/JP4885462B2/ja active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105826345B (zh) * | 2007-01-17 | 2018-07-31 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学*** |
CN102162176A (zh) * | 2011-03-16 | 2011-08-24 | 华中科技大学 | 一种微纳波纹结构及其制备方法、装置和应用 |
CN102162176B (zh) * | 2011-03-16 | 2012-09-05 | 华中科技大学 | 一种微纳波纹结构及其制备方法、装置和应用 |
CN105916696A (zh) * | 2013-10-30 | 2016-08-31 | 荷兰应用自然科学研究组织Tno | 用于在基底上形成图案化结构的方法与*** |
CN105916696B (zh) * | 2013-10-30 | 2018-08-17 | 荷兰应用自然科学研究组织Tno | 用于在基底上形成图案化结构的方法与*** |
TWI636896B (zh) * | 2013-10-30 | 2018-10-01 | 荷蘭Tno自然科學組織公司 | 用以在基材上形成圖案化結構之方法與系統 |
CN109473571A (zh) * | 2018-10-17 | 2019-03-15 | 大连交通大学 | 一种具有导电能力的电致发光器件稀土纳米发光层的制备方法 |
CN109473571B (zh) * | 2018-10-17 | 2021-07-09 | 大连交通大学 | 一种具有导电能力的电致发光器件稀土纳米发光层的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005260221A (ja) | 2005-09-22 |
CN100403492C (zh) | 2008-07-16 |
JP4885462B2 (ja) | 2012-02-29 |
US7381579B2 (en) | 2008-06-03 |
US20050191448A1 (en) | 2005-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1661774A (zh) | 施主薄片及其制造方法、及制造晶体管和显示器的方法 | |
US7579199B2 (en) | TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet | |
JP4476867B2 (ja) | 薄膜トランジスタ,電子装置およびフラットパネルディスプレイ装置 | |
KR100647699B1 (ko) | 나노 반도체 시트, 상기 나노 반도체 시트의 제조방법,상기 나노 반도체 시트를 이용한 박막 트랜지스터의제조방법, 상기 나노 반도체 시트를 이용한 평판표시장치의 제조방법, 박막 트랜지스터, 및 평판 표시장치 | |
US7795686B2 (en) | Semiconductor device using semiconductor nanowire and display apparatus and image pick-up apparatus using the same | |
EP3767675B1 (en) | Array substrate and method for manufacturing same, and display device | |
JP2007184566A (ja) | 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置 | |
KR100659056B1 (ko) | 박막 트랜지스터, 및 이를 구비한 평판 표시장치 | |
KR100615290B1 (ko) | 평판표시장치 | |
KR100669793B1 (ko) | Cmos 박막 트랜지스터 및 이를 구비한 평판 표시장치 | |
KR100626039B1 (ko) | 평판표시장치 | |
KR100603352B1 (ko) | 박막 트랜지스터, 이를 구비한 평판 표시장치 | |
KR100626040B1 (ko) | 평판표시장치 | |
KR100637162B1 (ko) | 박막 트랜지스터를 구비한 평판표시장치 | |
CN115719751A (zh) | 一种可调波长的电致发光器件及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20100115 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20100115 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung SDI Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121116 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121116 Address after: South Korea Gyeonggi Do Yongin Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |