CN1658720A - Drive element structure of organic LED display and manufacturing method thereof - Google Patents
Drive element structure of organic LED display and manufacturing method thereof Download PDFInfo
- Publication number
- CN1658720A CN1658720A CN 200410005860 CN200410005860A CN1658720A CN 1658720 A CN1658720 A CN 1658720A CN 200410005860 CN200410005860 CN 200410005860 CN 200410005860 A CN200410005860 A CN 200410005860A CN 1658720 A CN1658720 A CN 1658720A
- Authority
- CN
- China
- Prior art keywords
- drain electrode
- glass substrate
- thin
- film transistor
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
This invention discloses a driving organ structure and its manufacturing method of the organ light diode display. Its structure is that directly facture the pels electrode on the glass surface to reduce the leakage current and improve the lighting efficiency. Besides we can directly make the pels electrode on the glass surface in simple technics approach, through the having-source matrix driving organ structure manufacturing method, which can be applied in making the having-source matrix driving display with lower leakage current and higher lighting efficiency.
Description
Technical field
The present invention relates to organic light emitting diode display and manufacture method thereof, particularly relate to the driving element structure and the manufacture method thereof of organic light emitting diode display.
Background technology
Along with the maturation of Thin Film Transistor-LCD technology, flat-panel screens has become the main flow of monitor market now.The LCD industry has not only promoted the quality and quantity of display, has also quickened expectation and the demand of market for display of new generation.The good characteristics such as Organic Light Emitting Diode (OLED) is light except having, thin, low driving voltage, self-luminous and high visual angle, its technology is comparatively simple and can be applicable on the display element of deflection with respect to LCD, has become the display element of new generation of tool potentiality.
The type of drive of Organic Light Emitting Diode is divided into passive matrix (Passive Matrix) driving and active matrix (Active Matrix) drives two kinds, and the display that passive matrix drives is mainly used in automobile-used escope, mobile phone, game machine and PDA.The micromolecule organic light emitting diode display of commercialization volume production all adopts passive matrix to drive at present, advantage is simple structure, need not use colored filter and module backlight, cost is lower, and shortcoming is can produce phenomenons such as power consumption sharp increase, life-span reduction and display element deterioration towards the large size panel development.Be the compliant display development trend, the display of driven with active matrix possesses that the visual angle is wide, brightness is high and advantage such as low-response time, can meet large scale and high-resolution demand.The framework of general driven with active matrix display, be to set up thin-film transistor at substrate surface, the intermediate layer definition of thin-film transistor top has the electrode that is connected to source electrode and drain electrode, and above the intermediate layer and coated with cover layer, its definition has the through hole that is connected to drain electrode; Transparency conducting layer then builds on cover surface, and is electrically connected with the drain electrode generation by tectal through hole; And then the organic light-emitting diode element structure is arranged at the top surface of transparency conducting layer.Yet compared to passive matrix display, its luminous efficiency is lower and leakage current is bigger with the formed driven with active matrix display of said structure.
Because demand for large scale and high resolution display, the Driving technique of organic light emitting diode display needs to be developed to the driven with active matrix technology by passive drive, therefore, how structurally to do to change, promptly become the developing goal of Organic Light Emitting Diode Active Matrix Display to improve luminous efficiency and to reduce leakage current (Leakage Current).
Summary of the invention
For solving the problem of known technology, the invention provides a kind of driving element structure and manufacture method thereof of organic light emitting diode display.Its purpose is to design a kind of new driven with active matrix component structure, utilizes simple process steps that pixel electrode directly is made in glass surface.
For achieving the above object, the driving element structure of organic light emitting diode display of the present invention briefly, is that pixel electrode is directly contacted with glass substrate, and makes pixel electrode be electrically connected on the drain electrode of thin-film transistor by the drain electrode conductive junction point.Furthermore, structure of the present invention comprises glass substrate, thin-film transistor, intermediate layer and transparency conducting layer at least; Wherein, the intermediate layer is formed at the top of glass substrate, and transistorized source electrode of cover film and drain electrode, and the intermediate layer has source electrode and the drain electrode conductive junction point that is connected to source electrode and drain electrode; Transparency conducting layer directly contacts with glass substrate, and is electrically connected on drain electrode by the drain electrode conductive junction point, and transparency conducting layer is as pixel electrode.Compared to prior art, structure of the present invention can be made becomes the driven with active matrix display that has than low-leakage current and higher photoluminescence efficiency.
The present invention also has the purpose of simplifying driven with active matrix component structure technology, and structure of the present invention can be realized by simple process steps comparatively.The driving element structure making process of organic light emitting diode display of the present invention, its step comprises: a glass substrate is provided; Thin-film transistor is set up in top in glass substrate; Provide an intermediate layer with transistorized source electrode of cover film and drain electrode; Carry out a photoetching process and be connected to the through hole of source electrode and drain electrode and the contact area of glass substrate with formation; Insert conductive layer conductive junction point with formation source electrode and drain electrode in the through hole of source electrode and drain electrode; Form a transparency conducting layer its contact area that passes through glass substrate is directly contacted with glass substrate, transparency conducting layer forms with drain electrode by the drain electrode conductive junction point and is electrically connected.Because architectural characteristic of the present invention makes its processing step simpler than prior art.Wherein, the present invention can etch raceway groove by photoetching technique, and while or gradation form and be connected to the through hole of source electrode and drain electrode and the contact area of glass substrate; Steps such as the use of minimizing mask and photoetching, etching.Utilize the inventive method can be easily and existing process integration, and need not to increase new process equipment.
For making purpose of the present invention, structural feature and function thereof there are further understanding, cooperate diagram to be described in detail as follows now.
Description of drawings
Fig. 1 is the schematic diagram of the embodiment of the invention;
Fig. 2 is the manufacturing flow chart of the embodiment of the invention; And
Fig. 3 is the schematic diagram of second embodiment of the invention.
Description of reference numerals
10 glass substrate
11 buffer insulation layers
12 separators
13 polysilicon layers
14 grids
15 drain electrode conductive junction points
16 intermediate layers
20 transparency conducting layers
30 cover layers
Embodiment
The invention discloses a kind of driving element structure and manufacture method thereof of organic light emitting diode display, pixel electrode directly is made in glass surface to reduce leakage current and to improve luminous efficiency.
Structure of the present invention is to be laminated by dielectric substrate, polysilicon layer, buffer insulation layer, separator, grid, intermediate layer, transparency conducting layer and cover layer several sections.Please refer to Fig. 1, it is the schematic diagram of first embodiment of the invention.Wherein, dielectric substrate is made up of glass substrate 10 and 11 on buffer insulation layer; Polysilicon layer 13 is formed at buffer insulation layer 11 surface, and polysilicon layer 13 definition have drain electrode, source electrode and the channel region of thin-film transistor.Separator 12 is covered in buffer insulation layer 11 surface and covers polysilicon layer 13, is arranged at the channel region top of thin-film transistor between 14 of grids across this separator 12.Again with 16 cover gate, 14 surfaces, intermediate layer.Intermediate layer 16 has two contact holes that are through to source electrode and drain electrode respectively with separator 12, and inserts conductive layer to form source electrode conductive junction point and drain electrode conductive junction point 15 in contact hole.Transparency conducting layer 20 directly contacts with glass substrate 10, and is electrically connected on drain electrode by drain electrode conductive junction point 15; 30 of cover layers are in order to coating intermediate layer 16, source electrode conductive junction point and drain electrode conductive junction point 15.
Wherein, the organic light-emitting diode element structure can be arranged at the top surface of transparency conducting layer, and polysilicon layer used in the present invention also can utilize monocrystalline silicon layer to replace, and transparency conducting layer can be indium tin oxide layer.The present invention is except directly contacting with glass substrate in order to the transparency conducting layer as pixel electrode, the edge of the transparency conducting layer cap rock that also is covered covers, can effectively reduce the roughness of layer at transparent layer, and then reduce between the pixel electrode and the leakage current between pixel electrode and other electrodes.
For illustrating further the present invention, manufacturing process of the present invention below is described in detail in detail, please refer to Fig. 2, it is the manufacturing flow chart of the embodiment of the invention.Step is as follows in regular turn: at first, and the glass substrate (step 110) that provides surface coverage that insulating barrier is arranged; In surface of insulating layer polysilicon layer (step 120) is set, the polysilicon layer definition has source electrode, drain electrode and the channel region of thin-film transistor; Form the buffer insulation layer (step 130) of transistorized source electrode of cover film and drain electrode; Definition grid (step 140) is therebetween above the buffer insulation layer is formed at the channel region of thin-film transistor; Form the intermediate layer (step 150) of cover gate; Be connected to the through hole of source electrode and drain electrode and the contact area (step 160) of glass substrate with photoetching method formation; In the through hole definition metal level (step 170) of source electrode and drain electrode, to form the conductive junction point of source electrode and drain electrode; Form a transparency conducting layer and make its contact area that sees through glass substrate directly contact (step 180) with glass substrate, transparency conducting layer forms with drain electrode by the drain electrode conductive junction point and is electrically connected.
In addition, transparency conducting layer of the present invention can be connected in arbitrarily above or below the extended electrode of drain electrode conductive junction point institute, please refer to Fig. 3, it is the schematic diagram of second embodiment of the invention, is transparency conducting layer is connected in the extended electrode below by drain electrode conductive junction point institute.
Though the preferred embodiments of the present invention disclose as mentioned above; yet it is not in order to limit the present invention; any those of ordinary skills; without departing from the spirit and scope of the present invention; can make some and change and retouching, therefore scope of patent protection of the present invention should be with appended being as the criterion that patent claim was defined.
Claims (10)
1. the driving element structure of an organic light emitting diode display, it is applied to active drive-type display, it includes a glass substrate, a thin-film transistor and a transparency conducting layer, it is characterized in that: this transparency conducting layer directly contacts with this glass substrate, and makes this transparency conducting layer be electrically connected on a drain electrode of this thin-film transistor by a drain electrode conductive junction point.
2. the driving element structure of organic light emitting diode display as claimed in claim 1 comprises that also an intermediate layer is located between this drain electrode and this transparency conducting layer, and wherein this intermediate layer comprises this drain electrode conductive junction point.
3. the driving element structure of organic light emitting diode display as claimed in claim 1 comprises also that wherein a buffer insulation layer is located between this glass substrate surface and this thin-film transistor.
4. the driving element structure of an organic light emitting diode display, it is applied to active drive-type display, and it comprises:
One glass substrate;
One thin-film transistor is arranged at this glass substrate top;
One intermediate layer is formed at the top of glass substrate, and covers the one source pole and a drain electrode of this thin-film transistor, and this intermediate layer has an one source pole conductive junction point and a drain electrode conductive junction point that is connected to this source electrode and this drain electrode; And
One transparency conducting layer, it directly contacts with this glass substrate, and is electrically connected on this drain electrode by this drain electrode conductive junction point.
5. the driving element structure of organic light emitting diode display as claimed in claim 4 comprises also that wherein a buffer insulation layer is located between this glass substrate surface and this thin-film transistor.
6. the driving element structure of organic light emitting diode display as claimed in claim 4, wherein this thin-film transistor is a polycrystalline SiTFT.
7. the driving element structure of organic light emitting diode display as claimed in claim 4, wherein this drain electrode of this polycrystalline SiTFT and this source electrode are defined in a polysilicon layer.
8. the driving element structure making process of an organic light emitting diode display, its step comprises:
One glass substrate is provided;
One thin-film transistor is set above this glass substrate;
One source pole and the drain electrode of one intermediate layer to cover this thin-film transistor is provided;
Carry out at least once above photoetching process and be connected to the one source pole through hole and a drain electrode through hole of this source electrode and this drain electrode, and expose this glass substrate and form a contact area with formation;
Insert conductive layer in this source electrode through hole and this drain electrode through hole, to form an one source pole conductive junction point and a drain electrode conductive junction point; And
Form a transparency conducting layer and make it pass through this contact area directly to contact with this glass substrate, and this transparency conducting layer and be electrically connected on this drain electrode by this drain electrode conductive junction point.
9. the driving element structure making process of organic light emitting diode display as claimed in claim 8, wherein at this before above this glass substrate the step of a thin-film transistor being set, also be included in the step that this glass substrate surface forms a buffer insulation layer.
10. the driving element structure making process of organic light emitting diode display as claimed in claim 8, wherein this thin-film transistor is a polycrystalline SiTFT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410005860 CN1658720A (en) | 2004-02-20 | 2004-02-20 | Drive element structure of organic LED display and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410005860 CN1658720A (en) | 2004-02-20 | 2004-02-20 | Drive element structure of organic LED display and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1658720A true CN1658720A (en) | 2005-08-24 |
Family
ID=35007912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410005860 Pending CN1658720A (en) | 2004-02-20 | 2004-02-20 | Drive element structure of organic LED display and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1658720A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716154A (en) * | 2013-12-11 | 2015-06-17 | 昆山国显光电有限公司 | Organic light-emitting display device and manufacturing method thereof |
| CN104752463A (en) * | 2013-12-27 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Organic light emitting display and preparation method thereof |
| CN106876425A (en) * | 2015-09-25 | 2017-06-20 | 三星显示有限公司 | Display device |
| CN107946347A (en) * | 2017-11-27 | 2018-04-20 | 合肥鑫晟光电科技有限公司 | A kind of OLED display panel and preparation method thereof, display device |
-
2004
- 2004-02-20 CN CN 200410005860 patent/CN1658720A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716154A (en) * | 2013-12-11 | 2015-06-17 | 昆山国显光电有限公司 | Organic light-emitting display device and manufacturing method thereof |
| CN104752463A (en) * | 2013-12-27 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Organic light emitting display and preparation method thereof |
| CN104752463B (en) * | 2013-12-27 | 2019-02-19 | 昆山工研院新型平板显示技术中心有限公司 | A kind of organic light-emitting display device and preparation method thereof |
| CN106876425A (en) * | 2015-09-25 | 2017-06-20 | 三星显示有限公司 | Display device |
| CN106876425B (en) * | 2015-09-25 | 2022-03-04 | 三星显示有限公司 | Display device |
| CN107946347A (en) * | 2017-11-27 | 2018-04-20 | 合肥鑫晟光电科技有限公司 | A kind of OLED display panel and preparation method thereof, display device |
| CN107946347B (en) * | 2017-11-27 | 2021-08-10 | 合肥鑫晟光电科技有限公司 | OLED display panel, preparation method thereof and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9716131B2 (en) | AMOLED backplane structure and manufacturing method thereof | |
| CN1215568C (en) | Panel display and its manufacturing method | |
| CN1455630A (en) | Organic electroluminescence display device and its mfg. method | |
| CN1636235A (en) | Active matrix type organic electroluminescent display device and method of manufacturing the same | |
| CN1499909A (en) | Double-panel organic electroluminescent displaying device and its mfg. method | |
| CN1516530A (en) | Double-plate type organic electroluminescent display and mfg. method thereof | |
| CN100470875C (en) | Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device | |
| CN101047199A (en) | Organic electroluminescent display device and fabrication methods thereof | |
| CN1920664A (en) | Etching tape and method of fabricating array substrate for liquid crystal display using the same | |
| CN110534577B (en) | Thin film transistor and preparation method thereof | |
| CN1921142A (en) | Organic illuminated display device and and method for making same | |
| CN1856198A (en) | Flat panel display device | |
| CN1366790A (en) | Orgnaic EL display | |
| CN1455628A (en) | Organic-electroluminescence display device and its mfg. method | |
| CN1215567C (en) | Panel display and manufacturing method thereof | |
| CN1259731C (en) | Method for producing low-temperature polysilicon thin film transistor | |
| CN1638568A (en) | Dual panel type organic electroluminescent display device and method of fabricating the same | |
| CN1641450A (en) | Liquid crystal display device, and its manufacturing method anbd transistor array substrate and manufacturing method | |
| CN1658720A (en) | Drive element structure of organic LED display and manufacturing method thereof | |
| CN1716632A (en) | Double grid film electric crystal and pixel structure and its producing method | |
| CN1604341A (en) | Controlled film transistor, its preparation method and electroluminescent display apparatus containing same | |
| CN1484477A (en) | Organic electro-luminessence device and fabricating method thereof | |
| CN101079428A (en) | Thin film transistor module base board and its making method | |
| CN100342552C (en) | Thin film transistor and manufacturing method thereof | |
| CN1776486A (en) | Display panels and electronic |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |