CN1652185A - Picture element array and its picture quality improving method - Google Patents
Picture element array and its picture quality improving method Download PDFInfo
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- CN1652185A CN1652185A CNA2005100548977A CN200510054897A CN1652185A CN 1652185 A CN1652185 A CN 1652185A CN A2005100548977 A CNA2005100548977 A CN A2005100548977A CN 200510054897 A CN200510054897 A CN 200510054897A CN 1652185 A CN1652185 A CN 1652185A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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Abstract
The present invention relates to a pixel array. It includes several pixel drive circuits of electroluminescent component, every pixel drive circuit includes a switching transistor, a scanning line, a data line, a drive transistor, an electroluminescent component, a reservoir capacitor and a compensating capacitor, Said invention also provides the concrete connection mode of the above-mentioned all the components.
Description
Technical field
The present invention relates to a kind of electroluminescence part (electroluminescence device; And be particularly related to pel array of a kind of electroluminescence part and forming method thereof ELdeivce).
Background technology
Because Organic Light Emitting Diode (organic light emitting diode; OLED) brightness of being sent is proportional to the electric current that flows through, so the variation of electric current directly has influence on the uniformity coefficient of oled luminance.As shown in Figure 1, owing in the pixel of general driven, after image data voltage writes the A point, promptly can change driving transistors T
DrElectric current, this electric current just can excite light that should voltage by Organic Light Emitting Diode OLED; Yet, when the signal of sweep trace SL switches to the moment of closing, because switching transistor T
SwStray capacitance C between one grid and source electrode is arranged itself
Gs, the switching signal of sweep trace SL can cause the signal voltage of a coupling, originally desires to be stored in the voltage that A order and change, also thereby change scanning-line signal SL and be cut to the replica current that still continues to flow through Organic Light Emitting Diode OLED after closing, and the brightness of change pixel.
Same problem also can take place in the pixel of current drives, as Fig. 2 and shown in Figure 3, solid line among the figure is that data current Idata is at the current path that writes in the pixel stage (write stage), dotted line then is that pixel is after data current Idata writes pixel, in the duplicate stage that sweep trace is closed (reproducing stage), pixel copy data path of current, among the pixel of these current-drivens, when data current Idata when write phase flows through driving transistors T3, between the grid of driving transistors T3 and source electrode, have the voltage corresponding to Idata and be stored in storage capacitors C between grid and source electrode
sThe required voltage of data current Idata is flow through to keep in two ends, when sweep trace (or the sweep trace of erasing) when signal switches to the signal of off switch transistor T 2, just has the C of a small-signal by switching transistor
GsBe coupled to the A point and change storage capacitors C
sThe cross-pressure at two ends, thereby change electric current in pixel copy data current phase, and change the brightness of pixel.
The change of the pixel voltage that causes because of feedthrough (feedthrough) effect when this kind causes same when showing the situation that OLED brightness changes, if in all identical words of the voltage conditions of same row pixel, then this problem is also not serious, yet because the resistance of sweep trace itself and the existence of stray capacitance, thereby cause scanning-line signal RC to postpone the problem of (RC delay).Fig. 4 is the structural drawing of pel array, and Fig. 5 A is the synoptic diagram of the online pixel-driving circuit of single scanning in the pel array shown in Figure 4, in Fig. 5 B, when sweep signal begins to transmit from Far Left, what first pixel was seen may be desirable square wave, gradually, sweep signal is out of shape because of the RC effect, at end near sweep trace, sweep signal is out of shape the most seriously, its rise time (rising time) and fall time (falling time) all increase, therefore at the leftmost pixel voltage V of panel
PixelBecause of switching transistor is closed in the switching of scanning-line signal, and be coupled a small-signal on pixel, thereby pixel voltage is descended, yet, in the rightmost pixel of panel, its switching transistor can't cut out because of the switching of scanning-line signal at once, so can see with one scan online, the rightmost pixel voltage comes more leftmost pixel voltage high, and this problem will be serious more under the big more situation of panel size.
Summary of the invention
Embodiments of the invention provide a kind of pel array (pixel array) to comprise the pixel-driving circuit of a plurality of electroluminescence parts, and each pixel-driving circuit comprises a switching transistor, one scan line, a data line, a driving transistors, an electroluminescence part and a building-out capacitor; Sweep trace is connected to first end points of switching transistor, data line is coupled to second end points of switching transistor, first end points of driving transistors is connected to the 3rd end points of switching transistor, second end points of driving transistors is connected to one first current potential, one end of electroluminescence part is connected to the 3rd end points of driving transistors, the other end is connected to one second current potential, one end of storage capacitors is connected to first end points of driving transistors, and the other end is connected to first current potential or last sweep trace, and building-out capacitor is connected between first end points of first end points of switching transistor and driving transistors; Wherein, it is incomplete same that all are connected to the capacitance size of building-out capacitor of same sweep trace.
Embodiments of the invention still provide a kind of method for improving image quality of pel array, and the pixel in this pel array is to drive with electric current, and this method for improving image quality is included in the pixel-driving circuit that forms a plurality of electroluminescence parts on the glass substrate; And in each this pixel-driving circuit, form a building-out capacitor.Wherein, each pixel-driving circuit comprises a switching transistor, the one scan line, one data line, one driving transistors, one storage capacitors and an electroluminescence part, sweep trace is connected to first end points of switching transistor, data line is coupled to second end points of switching transistor, first end points of driving transistors is connected to the 3rd end points of switching transistor, second end points of driving transistors is connected to one first current potential, one end of electroluminescence part is connected to the 3rd end points of driving transistors, the other end is connected to one second current potential, one end of storage capacitors is connected to first end points of driving transistors, and the other end is connected to first current potential or last sweep trace, each building-out capacitor connects each first end points and respectively between first end points of each driving transistors of each switching transistor, wherein, it is incomplete same that all are connected to the capacitance size of building-out capacitor of same sweep trace.
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below.
Description of drawings
Fig. 1 is the pixel-driving circuit figure of traditional electroluminescence part.
Fig. 2 and Fig. 3 also are the pixel-driving circuit figure of traditional electroluminescence part.
Fig. 4 is the structural drawing of pel array.
Fig. 5 A is the synoptic diagram of the online pixel-driving circuit of single scanning in the pel array shown in Figure 4.
Fig. 5 B is sweep signal and pixel voltage V
PixelThe synoptic diagram that changes with the difference of location of pixels.
Fig. 6 is the single column of pixels driving circuit synoptic diagram according to the pel array of one embodiment of the invention.
Fig. 7 A is the employed conventional pixel driving circuit figure of simulation.
Fig. 7 B is according to the used pixel-driving circuit figure of embodiments of the invention in the simulation.
Fig. 8 A is the scanning voltage analogous diagram with the sweep trace that pixel-driving circuit is carried out shown in Fig. 7 A.
Fig. 8 B is by being carried out the pixel voltage analogous diagram with the pixel-driving circuit shown in Fig. 7 A.
Fig. 9 A is the scanning voltage analogous diagram with the sweep trace that pixel-driving circuit is carried out shown in Fig. 7 B.
Fig. 9 B is by being carried out the pixel voltage analogous diagram with the pixel-driving circuit shown in Fig. 7 B.
Figure 10 is the pixel-driving circuit synoptic diagram according to the pel array of another embodiment of the present invention.
The reference numeral explanation
C
Gp1, C
Gp2... C
Gpm... C
Pgn-building-out capacitor; C
GsStray capacitance between-grid and source electrode;
C
s-storage capacitors; C
ScStray capacitance between-sweep trace and the Vss;
DL
1, DL
2... DL
n-data line; The EL-electroluminescence part; The Idata-data current;
The OLED-Organic Light Emitting Diode; PDC
1, PDC
2... PDC
n-plain driving circuit;
The SL-sweep trace; T
Dr-driving transistors; T
Sw, T
Sw1, T
Sw2-switching transistor;
The T1-switching transistor; The T2-switching transistor; The T3-driving transistors;
Vdd, Vss-power supply supply voltage; V
Pixel-pixel voltage;
ES-first sweep trace; WS-second sweep trace.
Embodiment
Fig. 6 is the single column of pixels driving circuit synoptic diagram according to the pel array of one embodiment of the invention, and as shown in Figure 6, pel array (pixel array) comprises the pixel-driving circuit PDC of a plurality of electroluminescence parts
1, PDC
2... PDC
n, each pixel-driving circuit comprises a switching transistor T
Sw, one scan line (scanline) SL, a data line (data line) be (among the figure respectively with DL
1, DL
2... DL
nRepresentative), a driving transistors T
Dr, an electroluminescence part EL and a building-out capacitor be (among the figure respectively with C
Gp1, C
Gp2... C
GpnRepresentative); Sweep trace SL is connected to switching transistor T
SwFirst end points, data line is (among the figure respectively with DL
1, DL
2... DL
nRepresentative) is connected to switching transistor T
SwSecond end points, driving transistors T
DrFirst end points be connected to switching transistor T
SwThe 3rd end points, driving transistors T
DrSecond end points be connected to one first current potential, the end of electroluminescence part EL is connected to driving transistors T
DrThe 3rd end points, the other end is connected to one second current potential, storage capacitors C
sAn end be connected to driving transistors T
DrFirst end points, and the other end is connected to first current potential or last sweep trace, building-out capacitor is (among the figure respectively with C
Gp1, C
Gp2... C
GpnRepresentative) is connected switching transistor T
SwFirst end points and driving transistors T
DrFirst end points between.
Preferable, this switching transistor T
SwBe a N type thin film transistor (TFT), and this driving transistors T
DrIt is a P type thin film transistor (TFT).In addition, preferable, this first and second current potential is all a direct current voltage, and more particularly, this first current potential is Vdd power supply supply voltage, and this second current potential is Vss power supply supply voltage.Moreover the electroluminescence part EL in the embodiments of the invention can be an Organic Light Emitting Diode assembly.
In order to verify the influence of RC late effect, carried out emulation especially, conventional pixel driving circuit used in the emulation is shown in Fig. 7 A, and the parameter of each assembly is as back: the sweep trace of each pixel and the stray capacitance C between the Vss
Sc=0.06pF, the sweep trace resistance of each pixel is Rs1=20 Ω, storage capacitors C
s=0.5pF, two switching transistor T
Sw1With T
Sw2Size W/L=6 μ m/6 μ m, grid high pressure Vgh=9 volt, grid low pressure Vgl=-6 volt, the online situation that 640 pixels are arranged of simulation scanning, its Simulation result is shown in 8A and 8B figure, its transverse axis is the time, unit is second, and the longitudinal axis is a voltage, unit is a volt, and Fig. 8 A is the scanning voltage analogous diagram of sweep trace, can see the RC late effect that sweep signal is serious by its simulation result, and Fig. 8 B is the pixel voltage analogous diagram, can be seen that by its simulation result the voltage of pixel is also different and more and more higher with the position.
In the emulation according to the used pixel-driving circuit of the present invention shown in Fig. 7 B, wherein the building-out capacitor that each grade added is with C
Gp1=2 * 10
-17F begins to do linear increase, the C of the 320th pixel
Gp32c=320 * 2 * 10
-17F, the C of the 640th pixel
Gp640=640 * 2 * 10
-17F, Simulation result is shown in 9A and 9B figure, its transverse axis is the time, unit is second, and the longitudinal axis is a voltage, and unit is a volt, Fig. 9 A is the scanning voltage analogous diagram of sweep trace, Fig. 9 B is the pixel voltage analogous diagram, and the voltage of pixel is through revising, and makes voltage the 1st the pixel voltage no better than of the 320th and the 640th pixel.
Though simulation of the present invention is different and the linear situation that increases is carried out with the position at building-out capacitor, the invention is not restricted to this, as long as building-out capacitor helps to suppress the effect that pixel voltage changes because of the RC late effect of sweep signal.
Figure 10 is the pixel-driving circuit synoptic diagram according to the pel array of another embodiment of the present invention, as shown in figure 10, this pixel-driving circuit comprises one first switching transistor T1, a second switch transistor T 2, one first sweep trace ES (Erase Scan), a data line DL, a driving transistors T3, an electroluminescence part EL and a building-out capacitor C
GpmThe first sweep trace ES is connected to first end points of the first switching transistor T1, data line DL is coupled to second end points of the first switching transistor T1 by second switch transistor T 2, first end points of driving transistors T3 is connected to the 3rd end points of the first switching transistor T1, second end points of driving transistors T3 is connected to one first current potential, the end of electroluminescence part EL is connected to the 3rd end points of driving transistors T3, the other end is connected to one second current potential, storage capacitors C
sAn end be connected to first end points of driving transistors T3, and the other end is connected to first current potential or last sweep trace, building-out capacitor C
GpmBe coupled between first end points of first end points of the first switching transistor T1 and driving transistors T3.And preferable, this pixel-driving circuit more comprises one second sweep trace WS (WriteScan), is connected to the grid of second switch transistor T 2.
The present invention one provides a kind of method for improving image quality of pel array, and the pixel in this pel array is to drive with electric current, and this method for improving image quality is included in the base pixel driving circuit that forms a plurality of electroluminescence parts on the glass substrate; And in each this base pixel driving circuit, form a building-out capacitor.Wherein, as shown in Figure 6, each base pixel driving circuit comprises a switching transistor T
Sw, one scan line SL, a data line be (among the figure respectively with DL
1, DL
2... DL
nRepresentative), a driving transistors T
DrAnd an electroluminescence part EL, sweep trace SL is connected to switching transistor T
SwFirst end points, data line is (among the figure respectively with DL
1, DL
2... DL
nRepresentative) is coupled to switching transistor T
SwSecond end points, driving transistors T
DrFirst end points be connected to switching transistor T
SwThe 3rd end points, driving transistors T
DrSecond end points be connected to one first current potential, the end of electroluminescence part EL is connected to driving transistors T
DrThe 3rd end points, the other end is connected to one second current potential, storage capacitors C
sAn end be connected to driving transistors T
DrFirst end points, and the other end is connected to first current potential or last sweep trace, each building-out capacitor is (among the figure respectively with C
Gp1, C
Gp2... C
GpnRepresentative) connects each switching transistor T
SwEach first end points and each driving transistors T
DrEach first end points between, wherein, all are connected to the building-out capacitor of same sweep trace (among the figure respectively with C
Gp1, C
Gp2... C
GpnRepresentative) capacitance size is incomplete same.
The present invention utilize the storage capacitors in all pixels of same row non-with decide the end that voltage links to each other, and link the building-out capacitor that adding varies in size between the grid of switching transistor of this end, change with the RC late effect of inhibition pixel voltage because of sweep signal.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (16)
1. pel array comprises:
The pixel-driving circuit of a plurality of electroluminescence parts, each pixel-driving circuit comprises:
One first switching transistor has first, second and the 3rd end points;
One first sweep trace is connected to this first end points of this first switching transistor;
One data line is coupled to this second end points of this first switching transistor;
One driving transistors has first, second and the 3rd end points, and this first end points of this driving transistors is connected to the 3rd end points of this first switching transistor, and this of this driving transistors second end points is connected to one first current potential;
One electroluminescence part, one end are connected to the 3rd end points of this driving transistors, and the other end is connected to one second current potential;
One storage capacitors, an end are connected to this first end points of this driving transistors, and the other end is connected to this first current potential or last sweep trace; And
One building-out capacitor is coupled between this first end points of this first end points of this first switching transistor and this driving transistors;
Wherein, the building-out capacitor that is connected to same sweep trace has two different capacitances at least.
2. pel array as claimed in claim 1, wherein, the capacitance size that is connected to the building-out capacitor of same sweep trace changes in regular turn along the direction of this sweep trace.
3. pel array as claimed in claim 1, wherein, the capacitance size of building-out capacitor that is connected to same sweep trace is along the direction of this sweep trace and be linear change.
4. pel array as claimed in claim 1, wherein, this sweep trace is driven by the one scan line drive, and is connected to the capacitance size of the building-out capacitor of same sweep trace, is that distance according to itself and this scan line driver becomes and becomes big greatly and gradually.
5. pel array as claimed in claim 4, wherein, this first current potential is Vdd power supply supply voltage, and this second current potential is Vss power supply supply voltage.
6. pel array as claimed in claim 1, wherein, this electroluminescence part is an Organic Light Emitting Diode.
7. pel array as claimed in claim 1, wherein, in each pixel-driving circuit, this data line is this second end points that is coupled to this first switching transistor by a second switch transistor.
8. pel array as claimed in claim 1, wherein, each pixel-driving circuit comprises that more one second sweep trace is connected to the transistorized grid of this second switch.
9. a display panel comprises pel array as claimed in claim 1.
10. the pixel in the method for improving image quality of a pel array, this pel array is to drive with electric current, and this formation method comprises:
Form the base pixel driving circuit of a plurality of electroluminescence parts on a substrate, each base pixel driving circuit comprises:
One switching transistor has first, second and the 3rd end points;
The one scan line is connected to this first end points of this switching transistor;
One data line is coupled to this second end points of this switching transistor;
One driving transistors has first, second and the 3rd end points, and this first end points of this driving transistors is connected to the 3rd end points of this switching transistor, and this of this driving transistors second end points is connected to one first current potential;
One electroluminescence part, one end are connected to the 3rd end points of this driving transistors, and the other end is connected to one second current potential; And
One storage capacitors, an end are connected to this first end points of this driving transistors, and the other end is connected to this first current potential or last sweep trace; And
In each this base pixel driving circuit, form a building-out capacitor, each building-out capacitor is connected each first end points and respectively between first end points of each driving transistors of each switching transistor, wherein, the building-out capacitor that is connected to same sweep trace has two different capacitances at least.
11. the method for improving image quality of pel array as claimed in claim 10, wherein, the step that forms a building-out capacitor in each this base pixel driving circuit comprises that more the capacitance size that makes the building-out capacitor that is connected to same sweep trace changes in regular turn along the direction of this sweep trace.
12. the method for improving image quality of pel array as claimed in claim 10, wherein, the step that forms a building-out capacitor in each this base pixel driving circuit comprises that more the capacitance size that makes the building-out capacitor that is connected to same sweep trace is linear change along the direction of this sweep trace.
13. the method for improving image quality of pel array as claimed in claim 10, wherein, the step that forms a building-out capacitor in each this base pixel driving circuit comprises more that the capacitance size that makes the building-out capacitor that is connected to same sweep trace becomes according to its distance with the one scan line drive and becomes greatly and gradually greatly, wherein, this sweep trace is driven by this scan line driver.
14. the method for improving image quality of pel array as claimed in claim 10, wherein, this first and second current potential is all a direct current voltage.
15. the method for improving image quality of pel array as claimed in claim 14, wherein, this first current potential is Vdd power supply supply voltage, and this second current potential is Vss power supply supply voltage.
16. the method for improving image quality of pel array as claimed in claim 10, wherein, this electroluminescence part is an Organic Light Emitting Diode.
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|---|---|---|---|
| CNB2005100548977A CN100410989C (en) | 2005-03-22 | 2005-03-22 | Picture element array and its picture quality improving method |
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|---|---|---|---|
| CNB2005100548977A CN100410989C (en) | 2005-03-22 | 2005-03-22 | Picture element array and its picture quality improving method |
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| CN1652185A true CN1652185A (en) | 2005-08-10 |
| CN100410989C CN100410989C (en) | 2008-08-13 |
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| CN102779475A (en) * | 2011-05-10 | 2012-11-14 | 索尼公司 | Display device and display method |
| CN105047169A (en) * | 2015-09-07 | 2015-11-11 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof, display panel and display device |
| CN106652926A (en) * | 2015-10-28 | 2017-05-10 | 联咏科技股份有限公司 | Display panel, manufacturing method thereof, and driving method thereof |
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| CN105047169B (en) * | 2015-09-07 | 2017-12-01 | 京东方科技集团股份有限公司 | Image element circuit and its driving method, display panel and display device |
| WO2017041439A1 (en) * | 2015-09-07 | 2017-03-16 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof, display panel, and display apparatus |
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| CN109545151A (en) * | 2017-09-22 | 2019-03-29 | 三星显示有限公司 | Display device |
| CN107833552A (en) * | 2017-11-17 | 2018-03-23 | 合肥鑫晟光电科技有限公司 | Drive element of the grid, gate driving circuit and its driving method, display device |
| WO2019242557A1 (en) * | 2018-06-21 | 2019-12-26 | 京东方科技集团股份有限公司 | Pixel circuit and display device |
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