CN1645531A - Capacitors and manufacture thereof - Google Patents
Capacitors and manufacture thereof Download PDFInfo
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- CN1645531A CN1645531A CNA2004100997312A CN200410099731A CN1645531A CN 1645531 A CN1645531 A CN 1645531A CN A2004100997312 A CNA2004100997312 A CN A2004100997312A CN 200410099731 A CN200410099731 A CN 200410099731A CN 1645531 A CN1645531 A CN 1645531A
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- 239000003990 capacitor Substances 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000009413 insulation Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 51
- 238000003475 lamination Methods 0.000 claims description 21
- 238000001771 vacuum deposition Methods 0.000 claims description 15
- 238000007738 vacuum evaporation Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 description 15
- 238000001704 evaporation Methods 0.000 description 13
- 230000008020 evaporation Effects 0.000 description 13
- 238000005755 formation reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/14—Protection against electric or thermal overload
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
A first conductive film 2, a dielectric film 3, and a second conductive film 4 are formed on a base 1 such as glass and ceramic with electric insulation and heat resistance by a vacuum vapor-deposition means, the first and second conductive films 2, 4 have electrode plates 2a, 4a with a wide area and terminals 2b, 4b, the dielectric film 3 completely covers at least the electrode plates 2a, 4a of the first dielectric conductive film 2, and the dielectric film 3 is laminated in a way that the parts of the dielectric film 3 forming the terminals 2b, 4b are exposed.
Description
Technical field
The present invention relates to a kind of capacitor and manufacture method thereof, relate in particular to good and slim, jumbo capacitor of a kind of thermal endurance and manufacture method thereof.
Background technology
Capacitor is to utilize dielectric to inject battery lead plate and the electronic product that constitutes, as everyone knows, its static capacity (C) equation C=ε o * ε * S ÷ d (ε o=permittivity of vacuum, ε=dielectric relative dielectric constant, S=battery lead plate area, the d=electrode spacing) expression.Wherein, therefore, can increase ε or S or reduce d for increasing static capacity (C) because ε o is constant.And, on thin plastic film surface AM aluminum metallization and make it be wound into cylindrical vessel in carry out oil sealing and the conduct that constitutes has the capacitor of big static capacity and always is extensive use of.
As the capacitor of the small compact structure with high static capacity, for example double-layer capacitor always is known (for example with reference to Patent Document 1).This double-layer capacitor is provided with the division board in the electrolyte that keeps being immersed in anodal stacked band and the stacked interband of negative pole, and constitutes the electrode coiling body by stacked the bringing of the reel stacked band of these positive machines, division board and negative pole.Like this, the electrode roll strip winding that is made of the stacked band of positive pole, division board and the stacked band of negative pole by coiling implements to guarantee the miniaturization of high static capacity and capacitor.
[Patent Document 1] spy opens the 2002-134370 communique
Yet has such problem, promptly owing to generally use plastic film and wet goods as the aforesaid division board that in double-layer capacitor, uses, therefore have poor heat resistance, the possibility of scaling loss when the condition of high temperature is used, in case and scaling loss, can not realize function even turn back to the normal temperature state as capacitor.Also have such problem in addition, promptly, therefore have thickness to a certain degree, have restriction etc. shortening electrode spacing owing to use film as dielectric.In addition as mentioned above, in the situation that constitutes the wet type capacitor, must be provided with sealing device for preventing leakage, the capacitor of Gou Chenging also has such inconveniences such as the complexity of becoming for this reason.
Summary of the invention
In view of aforesaid problem, the purpose of this invention is to provide a kind of capacitor, this capacitor stacks gradually the dielectric and the electrode member that constitute capacitor by the film formation device that utilizes vacuum evaporation on substrate and forms, this capacitor has good thermal endurance, obtain the miniaturization of its volume again, and guarantee to realize high static capacity.
For achieving the above object, capacitor according to the present invention is characterised in that, this capacitor is by excellent heat resistance and have the substrate of electrical insulating property, with on substrate, form by vacuum deposition apparatus, and the 1st conducting film that constitutes by electrode board and portion of terminal, whole and expose above-mentioned portion of terminal ground stacked dielectric film on this 1st conducting film with the electrode board that covers above-mentioned the 1st conducting film by vacuum deposition apparatus, and it is stacked on above-mentioned dielectric film by vacuum deposition apparatus, and not with above-mentioned the 1st conducting film in the short circuit of electrode board the electrode board that is oppositely arranged and constitute with the 2nd conducting film that portion of terminal that the portion of terminal diverse location ground that forms on above-mentioned the 1st conducting film is provided with constitutes.
Key is in the present invention, constitutes the opposed battery lead plate of capacitor and film formation device formation by vacuum evaporation all for the dielectric that forms its spacing.Make in addition to constitute outermost the 2nd conducting film nonvoluntary exposing, preferably whole and expose the dielectric film of the portion of terminal of the 1st, the 2nd conducting film by the electrode board of this 2nd conducting film of the stacked covering of vacuum deposition apparatus on this 2nd conducting film again.In addition for increasing static capacity, can by the 1st conducting film, stacked on this 1st conducting film dielectric film, the 2nd conducting film and on this 2nd conducting film stacked dielectric film on substrate, form a plurality of vapor-deposited film lamination units as 1 vapor-deposited film lamination unit ground, if and these a plurality of vapor-deposited film lamination units not only form on the two sides in the one side of substrate, then can increase static capacity again.In addition, though wherein also the 1st conducting film can be formed directly on substrate surface,, also can form the dielectric film that becomes substrate for keeping the isolation between capacitor and this substrate.
In addition, manufacture method as capacitor of the present invention is characterised in that, at excellent heat resistance and have on the substrate of electrical insulating property by using vacuum deposition apparatus to form the 1st conducting film with electrode board and portion of terminal, it is whole and expose the stacked dielectric film in above-mentioned portion of terminal ground to cover this electrode board by vacuum deposition apparatus on this 1st conducting film, again on this dielectric film by implement vacuum evaporation come stacked by not with above-mentioned the 1st conducting film in the short circuit of electrode board the electrode board that is oppositely arranged, with the 2nd conducting film that constitutes with the portion of terminal of the portion of terminal diverse location ground setting that on above-mentioned the 1st conducting film, forms.When these the 1st conducting films of evaporation, dielectric film and the 2nd conducting film, preferably use mask set in addition for limiting the evaporation zone.
In the manufacture method of this capacitor, can on substrate, form the dielectric film that substrate is used by vacuum deposition apparatus, then by stack gradually above-mentioned the 1st conducting film, stacked on this 1st conducting film dielectric film, the 2nd conducting film and on this 2nd conducting film stacked dielectric film form 1 vapor-deposited film lamination unit, and make this vapor-deposited film lamination unit form a plurality of unit, also can on the two sides of substrate, form these a plurality of vapor-deposited film lamination units in addition.The alternately enforcement on the one side of substrate and another side of the film forming by vacuum evaporation in addition, on the two sides of substrate, forms in the situation of a plurality of vapor-deposited films unit, if then can prevent to increase the stress with respect to substrate.
Though preferably glass, pottery, synthetic resin etc. have the material of the parts of electrical insulating property as substrate,, also can form by conductive components such as for example metals if carry out insulation processing from the teeth outwards.Other the 1st, the 2nd conducting film be can evaporation metal get final product, for example suitable is platinum, gold, silver, palladium and these alloy, copper, aluminium, nickel and these alloy etc.For forming transparent capacitor, can use ITO (tin indium oxide) in addition.On the other hand, can use Ta as the dielectric film that comprises substrate
2O
5, SiO
2, TiO
2, Al
2O
3, MgF etc.
Can guarantee the high performance of high static capacity and realization capacitor according to capacitor of the present invention.Owing to each parts that forms capacitor by film forming, therefore can realize slimming and miniaturization, and can form pattern form arbitrarily in addition.In addition because substrate and on this substrate stacked vapor-deposited film all have high-fire resistance, therefore can obtain to have the capacitor of high-fire resistance.
Description of drawings
Fig. 1 is the summary construction diagram that an embodiment of the present invention is shown.
Fig. 2 is the decomposition graphics of Fig. 1.
Fig. 3 is the structure key diagram of the barricade that uses when forming conducting film.
Fig. 4 is the structure key diagram of the barricade that uses when forming dielectric film.
Fig. 5 is the equivalent circuit diagram that the capacitor among the present invention the 1st embodiment is shown.
Fig. 6 decomposes the conducting film of the capacitor in the embodiment of the invention 1 and the front view of dielectric film are shown.
Fig. 7 decomposes the conducting film of the capacitor in the embodiment of the invention 2 and the front view of dielectric film are shown.
Symbol description
1 substrate
2 the 1st conducting films
2a electrode board
The 2b portion of terminal
3 dielectric films
4 the 2nd conducting films
4a electrode board
The 4b portion of terminal
5,6 barricades
10 vapor-deposited film lamination units
Embodiment
As depicted in figs. 1 and 2, capacitor of the present invention is by having evaporation the 1st conducting film 2 on electrical insulating property, the stable on heating substrate 1, evaporation dielectric film 3 on this 1st conducting film 2, evaporation the 2nd conducting film 4 formations on dielectric film 3 again as glass, pottery etc.1st, the 2nd conducting film 2,4 has large-area battery lead plate 2a, 4a and portion of terminal 2b, 4b, and dielectric film 3 has the electrode board 2a that is completely covered at least the 1st conducting film 2, the area of 4a in addition.But dielectric film 3 comes stacked by exposing the position that forms above-mentioned portion of terminal 2b, 4b.In addition preferably, becoming on the 2nd conducting film 4 of upper side electrode, though not shown, stacked and the identical dielectric film of dielectric film 3 size essence.Though this outermost layer dielectric film may not be necessary under the situation of the capacitor that encapsulates manufacturing with resin etc., be preferably as the function of diaphragm and form.
Though 1st, the 2nd conducting film 2,4 also can use different materials, for simplifying manufacture process, best same material.As this material,, under situation, can form by the ITO film to the capacitor requirement transparency though use the metal, particularly aluminium etc. that for example have conductivity to be suitable for the metal material of vacuum evaporation.On the other hand, though dielectric film 3 also can use silicon dioxide (SiO
2) etc., but preferably use tantalum oxide (Ta as the big material of dielectric constant height and insulation rate
2O
5).
For reducing above-mentioned electrode spacing (d), though wish dielectric film 3 filming as much as possible, if make dielectric film 3 extreme filmings, then because of the voltage-resistent characteristic part that descends is short-circuited etc., the possibility that insulation breakdown takes place uprises.Therefore preferably have thickness to a certain degree, promptly 500nm is to the thickness more than the 500nm.With respect to this, the 1st, the 2nd conducting film 2,4 comparable dielectric film 3 filmings for example also can be that 200nm is to the thickness below the 200nm.In addition, the thickness that the stress that the thickness of substrate 1 produces when having not because of film forming is out of shape gets final product, can be thin as much as possible in this scope.
Though the 1st conducting film 2, dielectric film 3 and the 2nd conducting film 4 stack gradually by vacuum evaporation, but littler than the area of dielectric film 3, and make mediate the making of dielectric film 3 not form short circuit between these electrode boards 2a, 4a and be oppositely arranged by electrode board 2a, the 4a that makes the 1st, the 2nd conducting film 2,4.In addition, on the 1st, the 2nd conducting film 2,4, form portion of terminal 2b, 4b respectively.Therefore when implementing vacuum evaporation, be necessary to implement shielding.Therefore as shown in Figure 3, implement film forming greatly and at the barricade 5 of the film forming position formation punching 5a of portion by using than substrate 1 size.Wherein when forming the 1st conducting film 2 and the 2nd conducting film 4,, can use by upset barricade 5 though need form the zone of portion of terminal 2b, 4b respectively at diverse location.Therefore in fact preparing a kind of barricade 5 gets final product.When forming dielectric film 3,, use barricade 6 in addition with 6a of punching portion as shown in Figure 4 for the electrode board 2a that covers fully on the 1st conducting film 2 does not cover portion of terminal 2b.This barricade 6 can constitute simple shaped as frame.Evaporation the 1st, the 2nd conducting film 2,4 and dielectric film 3 as described above, but illustrate with oblique line in Fig. 3 and Fig. 4 according to the mask pattern on the substrate 1 of barricade 5,6.Wherein the 1st, the 2nd conducting film 2,4 constitutes battery lead plate, owing to need dielectric film 3 highdensity film forming for not being short-circuited 2,4 of the 1st, the 2nd conducting films when carrying out above-mentioned evaporation, has therefore improved vacuum degree in addition.In addition, be layered in dielectric film on the 2nd dielectric film 4 and can use also that employed barricade 6 carries out evaporation when forming dielectric film 3.
Vacuum evaporation is as the aluminium of the 1st conducting film 2 on the surface of substrate 1.By using when this evaporation barricade to make the thickness of the 1st conducting film 2 be about 200nm, form portion of terminal 2b simultaneously.Cover on this 1st conducting film 2 then fully and do not cover the stacked dielectric film 3 that constitutes by tantalum oxide in portion of terminal 2b ground.The thickness of this conducting film 3 is 500nm.Evaporation does not overlap with the portion of terminal 2b of the 1st conducting film 2, is that portion of terminal 2b and portion of terminal 4b divide right and left on substrate 1 with the 2nd conducting film 4 of the 1st conducting film 2 identical patterns, same thickness, the extraction location of its portion of terminal 4b on this conducting film 3 in addition.On this 2nd conducting film 4, form dielectric film with dielectric film 3 same material character, identical patterns, same thickness in addition by evaporation coating device.
In the capacitor that forms like this, cut off the connection of power supply therewith behind the voltage that applies between this portion of terminal 2b, 4b from DC power supply and measure voltage between terminal 2b, 4b by giving, confirm the residual voltage roughly the same down, obtain electric power storage effect as capacitor with the voltage of DC power supply.
Like this, owing to make dielectric thickness attenuation, therefore can increase static capacity (C) because of this part.In addition, vapor-deposited film has small concavo-convex in its surface, because because in fact this jog has increased surface area, so the surface area (S) of conducting film 2,4 compares the area increase of being seen.Therefore from this aspect, also increased static capacity (C).And, therefore in fact do not increase the thickness of substrate 1, thereby form the capacitor of slim compact because this capacitor forms conducting film and dielectric film by film formation device.
In addition, because the capacitor that forms constitutes by stacked electrode part in ground of vacuum evaporation on the substrate of glass and dielectric layer like this, therefore thermal endurance becomes very high, even under hot conditions, use the possibility that scaling loss etc. can not take place yet, and can make physical characteristic remain on highly stable state, even also can make static capacity keep stable through long-time use.The capacitor that forms like this is the dry-type capacitor that does not use liquid in addition, therefore there is no need to be provided with sealing device.
Wherein, in fact when making capacitor,, can form the shown plane-parallel capacitor of Fig. 5 equivalent electric circuit by the stacked number that increases conducting film and dielectric film for hope increases static capacity.If constitute like this, then, therefore static capacity is increased more because the two sides of conducting film has the function as electrode.
So pattern as shown in Figure 6, at first stacked dielectric film 3 on substrate 1.Stacked the 1st conducting film 2 on this dielectric film 3, stacked dielectric film 3 on this 1st conducting film 2 again, stacked again the 2nd conducting film 4, stacked dielectric film 3 on this 2nd conducting film 4 again.4 layer laminates that make alternately laminated like this conducting film and dielectric film form the capacitor that is made of 8 pairs of parallel-plates as 1 vapor-deposited film lamination unit 10 by forming 8 vapor-deposited film lamination units 10 successively.
Wherein, though electrically conducting mutually between each portion of terminal 2b of the 1st conducting film 2 in each unit and between each the portion of terminal 4b in the 2nd conducting film 4, but when implementing vacuum evaporation, use is not the position as the conducting film 2,4 of battery lead plate function, and the position of portion of terminal 2b, 4b is the barricade 5 of punching also.Therefore by between the portion of terminal 2b, the 2b that carry out evaporation upper and lower settings when making under the state of the position of determining this barricade 5 and electrically conducting ground is stacked really between portion of terminal 4b, the 4b in film forming.When the dielectric film 3 that forms between the 1st, the 2nd conducting film 2,4, use barricade 6 in addition, owing to have the bigger 6a of punching portion of electrode board 2a, 4a than the 1st, the 2nd conducting film 2,4 that constitutes this bottom, therefore by correctly the position is definite, can between the 1st, the 2nd conducting film 2,4, not be short-circuited.
As mentioned above, though come successively by vacuum evaporation that alternately layered dielectric film and conducting film can form the capacitor with regulation static capacity, if but executed film by vacuum evaporation, then the film sum would be many more, distortion and warpage that easy more generation produces because of the stress that acts on the substrate 1.Therefore cannot on the one side of substrate, unrestrictedly increase stacked number.Therefore as shown in Figure 7, on the two sides of substrate 1, form vapor-deposited film, and by on the two sides each alternately stacked 1 layer can be suppressed at the stress on the substrate 1 and can suppress the distortion of substrate 1 and distortion such as warpage to multilayer.So forming respectively on the two sides of substrate 1 makes vapor-deposited film lamination unit 10 become the capacitor of unit 8 duplexer.And can be electrically connected in the device that inserts regulation by making all portion of terminal 2b of the 1st conducting film 2 on one side and the another side and all portion of terminal 4b of the 2nd conducting film 4 at last.
Claims (12)
1. a capacitor is characterized in that, described capacitor by
Excellent heat resistance and have the substrate of electrical insulating property,
The 1st conducting film that forms on substrate by vacuum deposition apparatus, constitute by electrode board and portion of terminal,
By vacuum deposition apparatus stacked dielectric film on this 1st conducting film, it covers the electrode board integral body of above-mentioned the 1st conducting film and exposes above-mentioned portion of terminal,
Stacked on above-mentioned dielectric film by vacuum deposition apparatus, by not with above-mentioned the 1st conducting film in the short circuit of electrode board the electrode board that is oppositely arranged and the 2nd conducting film that constitutes with portion of terminal that the portion of terminal diverse location ground that forms on above-mentioned the 1st conducting film is provided with.
2. according to the capacitor of claim 1 record, it is characterized in that the stacked diaphragm that is made of electrical insulating material is arranged on above-mentioned the 2nd conducting film, it is whole and expose the portion of terminal of above-mentioned the 1st, the 2nd conducting film to cover the electrode board of above-mentioned the 2nd conducting film.
3. according to the capacitor of claim 1 record, it is characterized in that, make above-mentioned the 1st conducting film, dielectric film, the 2nd conducting film stacked on this 1st conducting film and on this 2nd conducting film stacked dielectric film and on aforesaid substrate, form a plurality of vapor-deposited film lamination units as 1 vapor-deposited film lamination unit by stacked.
4. according to the capacitor of claim 3 record, it is characterized in that, on the two sides of aforesaid substrate, be formed with a plurality of vapor-deposited film lamination units.
5. according to the capacitor of claim 1 record, it is characterized in that, all the 1st portion of terminal and all the 2nd portion of terminal in a plurality of vapor-deposited film lamination units that form on the both sides of aforesaid substrate are electrically connected.
6. according to the capacitor of claim 1, it is characterized in that, between aforesaid substrate and above-mentioned the 1st conducting film, insert the dielectric film that substrate is used by vacuum deposition apparatus to the record of one of claim 5.
7. according to the capacitor of claim 3 record, it is characterized in that, form aforesaid substrate with transparent material, and form above-mentioned vapor-deposited film lamination unit with transparent material.
8. the manufacture method of a capacitor is characterized in that,
At excellent heat resistance and have on the substrate of electrical insulating property by using vacuum deposition apparatus to form the 1st conducting film with electrode board and portion of terminal,
On this 1st conducting film, cover this electrode board integral body and expose the stacked dielectric film in above-mentioned portion of terminal ground by vacuum deposition apparatus,
On this dielectric film again by implement vacuum evaporation come stacked by not with above-mentioned the 1st conducting film in the electrode board that is oppositely arranged of electrode board short circuit ground and with the 2nd conducting film of the portion of terminal formation of the portion of terminal diverse location ground setting that on above-mentioned the 1st conducting film, forms.
9. the manufacture method of capacitor of record according to Claim 8; it is characterized in that, whole and expose the stacked diaphragm that constitutes by electric insulation part in above-mentioned portion of terminal ground of above-mentioned the 1st conducting film and the 2nd conducting film by covering its electrode board on above-mentioned the 2nd conducting film.
10. the manufacture method of the capacitor of putting down in writing according to Claim 8 is characterized in that,
On aforesaid substrate, form the dielectric film that substrate is used by vacuum deposition apparatus,
Then by stack gradually above-mentioned the 1st conducting film, stacked on this 1st conducting film dielectric film, the 2nd conducting film and on this 2nd conducting film stacked dielectric film form 1 vapor-deposited film lamination unit, and make this vapor-deposited film lamination unit form a plurality of unit.
11. the manufacture method of a capacitor, it is characterized in that, on the two sides of aforesaid substrate, form the dielectric film that substrate is used by vacuum deposition apparatus respectively, by stack gradually above-mentioned the 1st conducting film, stacked on this 1st conducting film dielectric film, the 2nd conducting film and on this 2nd conducting film stacked dielectric film form 1 vapor-deposited film lamination unit, and make this vapor-deposited film lamination unit on the two sides of substrate, form a plurality of unit successively.
12. the manufacture method according to the capacitor of claim 11 record is characterized in that, when on the two sides of aforesaid substrate, forming the vapor-deposited film lamination unit, and alternately 1 layer of film forming or multilayer vapor-deposited film lamination unit respectively on the one side of described substrate and another side.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003411508 | 2003-12-10 | ||
| JP2003411508A JP2005175120A (en) | 2003-12-10 | 2003-12-10 | Capacitor and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1645531A true CN1645531A (en) | 2005-07-27 |
Family
ID=34732218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100997312A Pending CN1645531A (en) | 2003-12-10 | 2004-12-10 | Capacitors and manufacture thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2005175120A (en) |
| KR (1) | KR20050056882A (en) |
| CN (1) | CN1645531A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9786444B2 (en) * | 2009-06-25 | 2017-10-10 | Nokia Technologies Oy | Nano-structured flexible electrodes, and energy storage devices using the same |
| WO2013024406A2 (en) * | 2011-08-16 | 2013-02-21 | Koninklijke Philips Electronics N.V. | Transparent capacitive wireless powering system |
| KR102067176B1 (en) * | 2017-10-19 | 2020-01-15 | 삼성전기주식회사 | Multilayered electronic component and board having the same |
-
2003
- 2003-12-10 JP JP2003411508A patent/JP2005175120A/en not_active Withdrawn
-
2004
- 2004-12-09 KR KR1020040103448A patent/KR20050056882A/en not_active Application Discontinuation
- 2004-12-10 CN CNA2004100997312A patent/CN1645531A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005175120A (en) | 2005-06-30 |
| KR20050056882A (en) | 2005-06-16 |
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