CN1635636A - 用于将铜与金属-绝缘体-金属电容器结合的方法和结构 - Google Patents
用于将铜与金属-绝缘体-金属电容器结合的方法和结构 Download PDFInfo
- Publication number
- CN1635636A CN1635636A CNA2003101229626A CN200310122962A CN1635636A CN 1635636 A CN1635636 A CN 1635636A CN A2003101229626 A CNA2003101229626 A CN A2003101229626A CN 200310122962 A CN200310122962 A CN 200310122962A CN 1635636 A CN1635636 A CN 1635636A
- Authority
- CN
- China
- Prior art keywords
- layer
- overlying
- copper
- metal layer
- insulating barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 114
- 239000010949 copper Substances 0.000 title claims abstract description 114
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 239000003990 capacitor Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims description 72
- 239000010410 layer Substances 0.000 claims abstract description 277
- 229910052751 metal Inorganic materials 0.000 claims abstract description 193
- 239000002184 metal Substances 0.000 claims abstract description 193
- 239000011229 interlayer Substances 0.000 claims abstract description 81
- 238000005530 etching Methods 0.000 claims abstract description 65
- 239000003989 dielectric material Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims description 123
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 229910000831 Steel Inorganic materials 0.000 claims description 21
- 239000010959 steel Substances 0.000 claims description 21
- 238000012856 packing Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000002955 isolation Methods 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000003672 processing method Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 150000001879 copper Chemical class 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000002615 epidermis Anatomy 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (20)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101229626A CN100461393C (zh) | 2003-12-30 | 2003-12-30 | 用于将铜与金属-绝缘体-金属电容器结合的方法和结构 |
US10/773,954 US6853082B1 (en) | 2003-12-30 | 2004-02-06 | Method and structure for integrating metal insulator metal capacitor with copper |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101229626A CN100461393C (zh) | 2003-12-30 | 2003-12-30 | 用于将铜与金属-绝缘体-金属电容器结合的方法和结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1635636A true CN1635636A (zh) | 2005-07-06 |
CN100461393C CN100461393C (zh) | 2009-02-11 |
Family
ID=34085352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101229626A Expired - Lifetime CN100461393C (zh) | 2003-12-30 | 2003-12-30 | 用于将铜与金属-绝缘体-金属电容器结合的方法和结构 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6853082B1 (zh) |
CN (1) | CN100461393C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103915375A (zh) * | 2012-12-31 | 2014-07-09 | 意法半导体公司 | 用于先进后端工艺线互连的组合大马士革和减薄金属刻蚀的***及方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6916722B2 (en) * | 2002-12-02 | 2005-07-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to fabricate high reliable metal capacitor within copper back-end process |
US7944020B1 (en) * | 2006-12-22 | 2011-05-17 | Cypress Semiconductor Corporation | Reverse MIM capacitor |
JP2009105300A (ja) * | 2007-10-25 | 2009-05-14 | Panasonic Corp | 半導体装置及びその製造方法 |
US8765549B2 (en) * | 2012-04-27 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitor for interposers and methods of manufacture thereof |
US9054109B2 (en) | 2012-05-29 | 2015-06-09 | International Business Machines Corporation | Corrosion/etching protection in integration circuit fabrications |
US9728719B2 (en) * | 2014-04-25 | 2017-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Leakage resistant RRAM/MIM structure |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6441419B1 (en) * | 1998-03-31 | 2002-08-27 | Lsi Logic Corporation | Encapsulated-metal vertical-interdigitated capacitor and damascene method of manufacturing same |
US6313003B1 (en) * | 2000-08-17 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Fabrication process for metal-insulator-metal capacitor with low gate resistance |
CN1248303C (zh) * | 2001-08-22 | 2006-03-29 | 联华电子股份有限公司 | 利用镶嵌制程形成金属电容器的方法及其产品 |
CN1201386C (zh) * | 2001-08-22 | 2005-05-11 | 联华电子股份有限公司 | 利用镶嵌制程形成金属电容器的方法及其产品 |
US6645810B2 (en) * | 2001-11-13 | 2003-11-11 | Chartered Semiconductors Manufacturing Limited | Method to fabricate MIM capacitor using damascene process |
CN1202569C (zh) * | 2002-01-09 | 2005-05-18 | 中芯国际集成电路制造(上海)有限公司 | 在铜镶嵌制程中形成金属-绝缘-金属型(mim)电容器的方法 |
JP2003264235A (ja) * | 2002-03-08 | 2003-09-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6720608B2 (en) * | 2002-05-22 | 2004-04-13 | United Microelectronics Corp. | Metal-insulator-metal capacitor structure |
-
2003
- 2003-12-30 CN CNB2003101229626A patent/CN100461393C/zh not_active Expired - Lifetime
-
2004
- 2004-02-06 US US10/773,954 patent/US6853082B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103915375A (zh) * | 2012-12-31 | 2014-07-09 | 意法半导体公司 | 用于先进后端工艺线互连的组合大马士革和减薄金属刻蚀的***及方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100461393C (zh) | 2009-02-11 |
US6853082B1 (en) | 2005-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111202 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20090211 |